CN106801222A - A kind of chip tray and MOCVD systems - Google Patents
A kind of chip tray and MOCVD systems Download PDFInfo
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- CN106801222A CN106801222A CN201510836832.1A CN201510836832A CN106801222A CN 106801222 A CN106801222 A CN 106801222A CN 201510836832 A CN201510836832 A CN 201510836832A CN 106801222 A CN106801222 A CN 106801222A
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- Prior art keywords
- boss
- heating element
- tray body
- tray
- element heater
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a kind of chip tray and MOCVD systems.A kind of chip tray, in MOCVD systems, MOCVD systems to include support shaft and heating element heater, it is characterised in that chip tray includes tray body, is arranged at the boss at tray body lower surface center and is connected to the rotary connector of boss lower surface；The upper surface of support shaft is provided with pit, and rotary connector insertion pit is simultaneously engaged with pit；Tray body is placed in heating element heater top, and boss is surround by its adjacent heating element.The present invention is realized when using tray body central support structure, and tray body central temperature can keep basically identical with pallet neighboring area, and temperature homogeneity has larger improvement, is made chip tray remain to rotate at a high speed and is easy to manipulator etc. to pass disk automatically.
Description
Technical field
The present invention relates to MOCVD, (Metal-organic Chemical Vapor Deposition, metal is organic
Chemical vapor deposition) system regions, more particularly to a kind of chip tray and MOCVD systems.
Background technology
At present, MOCVD systems (metal organic chemical vapor deposition system) are used as a kind of typical CVD
(Chemical Vapor Deposition, chemical vapor deposition) equipment, using the teaching of the invention it is possible to provide (such as blue in chip
Jewel epitaxial wafer) superficial growth is used for temperature required during luminous crystal structure GaN (gallium nitride), pressure
The conditions such as power, chemical gas component.The reaction chamber of vacuum is provided with MOCVD device, is provided with reaction chamber
Pallet, is introduced reaction gases into reaction chamber, and be transported to placement by inlet duct (such as spray head)
The surface of the multiple chips on pallet is processed, so as to grow specific crystal structure, such as GaN
Structure.In a kind of design of the chip tray heating support meanss of existing MOCVD systems, in order to simultaneously
Realize that reaction is uniform, pallet needs rotation at a high speed and vacuum automation to pass disk.Pallet employs central point support
Mode, as shown in figure 1, so pallet 10 central point lower section cannot arrange heater strip 11, and support shaft
12 is typically all metal material, and heat conduction preferably, the temperature at the center of pallet 10 is taken away, so that tray center temperature
Degree is less than other parts temperature, causes the temperature singular point of tray center, so this design pallet 10 center one
As do not put chip.Existing another scheme is as shown in Fig. 2 Fig. 2 is connected by the edge bottom surface of pallet 20
Structure for welding and supporting 21 is supported and rotary-tray 20, and the centre bottom of pallet 20 can place heater strip 22, hold in the palm
The heating of the center of disk 20 can be fully ensured that, but realize pallet by the edge bottom surface connected support structure of pallet 20
20 high speeds rotate and automation biography disk is very difficult.In actual applications, the corresponding schemes of Fig. 1 are gradually occupied
Leading position, therefore, the temperature singular point of tray center how is eliminated, it is the problem of industry urgent need to resolve.
The content of the invention
The invention provides a kind of chip tray and MOCVD systems, it is less than for solving tray center temperature
Other parts temperature, causes the problem of the temperature singular point of tray center.
The embodiment of the present invention uses following technical scheme：
In a first aspect, the invention provides a kind of chip tray, for MOCVD systems in, it is described
MOCVD systems include support shaft and heating element heater, and the chip tray includes tray body, is arranged at support
The boss at disk body lower surface center and the rotary connector for being connected to the boss lower surface；The support shaft
Upper surface be provided with pit, the rotary connector inserts the pit and is simultaneously engaged with the pit；Institute
State tray body and be placed in the heating element heater top, and the boss is surround by its adjacent heating element.
Preferably, when extension is reacted, the side of the boss receives scattered adjacent to the heating element heater of the boss
The heat of hair.
Preferably, the thickness of the boss is more than or equal to one layer of thickness of heating element heater.
Preferably, the lower surface of the boss and the lower surface of tray body are parallel, and at least one layer heating
Lower surface of the lower surface of element higher than the boss.
Preferably, the tray body upper surface is provided centrally with the recessed disk for placing epitaxial wafer, Huo Zhesuo
Tray body upper surface is stated to be centrally located in the recessed disk for placing epitaxial wafer.
Second aspect, present invention also offers a kind of MOCVD systems, including chip tray, support shaft and
Heating element heater, the chip tray include tray body, be arranged at tray body lower surface center boss and
It is connected to the rotary connector of the boss lower surface；The upper surface of the support shaft is provided with pit, described
Rotary connector inserts the pit and is engaged with the pit；The tray body is placed in the heating unit
Above part, and the boss is surround by its adjacent heating element.
Preferably, when extension is reacted, the side of the boss receives scattered adjacent to the heating element heater of the boss
The heat of hair.
Preferably, the heating element heater of the neighbouring boss is used to heat the tray body.
Preferably, the thickness of the boss is more than or equal to one layer of thickness of heating element heater.
Preferably, the lower surface of the boss and the lower surface of tray body are parallel, and at least one layer heating
Lower surface of the lower surface of element higher than the boss.
Preferably, the boss and support shaft are surround by two-layer above heating element heater.
Preferably, the tray body upper surface is provided centrally with the recessed disk for placing epitaxial wafer, Huo Zhesuo
Tray body upper surface is stated to be centrally located in the recessed disk for placing epitaxial wafer.
Preferably, the material of the support shaft is metal, and support shaft side is provided with inside groove and/or support shaft
It is provided with dead slot.
Compared with prior art, the present invention is provided a kind of chip tray and MOCVD systems, with following
Beneficial effect：
In the present invention tray body except can by lower surface set heating element heater upwards heating in addition to, boss
The heat that heating element heater is distributed can also be absorbed from boss side surfaces, realize and using tray body central supported
During structure, tray body central temperature can keep basically identical with pallet neighboring area, and temperature homogeneity has
Larger improvement, allows tray body center may also be used for placing epitaxial wafer or pallet and places bigger outer
Prolong piece, and chip tray can follow support shaft to rotate, and make chip tray remain to rotate and be easy to manipulator at a high speed
Disk is passed Deng automatic.
Brief description of the drawings
Fig. 1 is the structural representation one of prior art of the present invention.
Fig. 2 is the structural representation two of prior art of the present invention.
Fig. 3 is a kind of generalized section of the one embodiment for chip tray that the present invention is provided.
Fig. 4 is a kind of second embodiment generalized section of chip tray that the present invention is provided.
Fig. 5 is a kind of structural representation of MOCVD system embodiments that the present invention is provided.
Fig. 6 is the comparative experimental data broken line graph of the MOCVD system embodiments that the present invention is provided.
Specific embodiment
For make present invention solves the technical problem that, the technical scheme that uses and the technique effect that reaches it is more clear
Chu, is described in further detail below in conjunction with accompanying drawing to the technical scheme of the embodiment of the present invention, it is clear that
Described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on this hair
Embodiment in bright, those skilled in the art obtained under the premise of creative work is not made it is all its
His embodiment, belongs to the scope of protection of the invention.
Fig. 3 shows a kind of structural representation of the chip tray one embodiment provided according to the present invention.This
A kind of chip tray of embodiment, in MOCVD systems, MOCVD systems to include support shaft 12
With heating element heater 22, chip tray includes tray body 30, is arranged at the boss at tray body lower surface center
32 and it is connected to the rotary connector 34 of boss lower surface；Tray body 30 is placed in the top of heating element heater 22,
The heat that heating element heater 22 is distributed upwards, the upper surface of support shaft 12 are absorbed by the lower surface of tray body 30
Pit is provided with, rotary connector 34 inserts the pit and is engaged with the pit, so as to realize support shaft 12
Support and rotation driving to pallet, and boss 32 surround by its (boss 32) adjacent heating element 22.
Wherein, general tray body 30 uses graphite material, for placing chip when epitaxial wafer grows.And
Boss 32 and rotary connector 34 it is also preferred that using graphite material, boss 32 and rotary connector 34 and support
Disk body 30 can be integrally formed entirety, or cooperation is formed, and boss 32 can be round platform,
The shapes such as cylinder, the present embodiment is not limited；Rotary connector 34 is usually taper.The conduct of boss 32
Thermal store, when extension is reacted, the absorption of the side of boss 32 is distributed around the adjacent heating element 22 of boss 32
Heat.It is to allow the boss 32 can to receive suitable heat from side, boss 32 will ensure certain thickness
Degree, the thickness of usual boss 32 is set greater than or equal to one layer of thickness of heating element heater.Preferred a kind of
In implementation, the lower surface of boss is parallel with the lower surface of tray body, and at least one layer heating element heater
Lower surface higher than the boss lower surface, to ensure that boss side surfaces can receive enough heats.Specific
Using when, heating element heater 22 be usually heater strip or heating plate.
Wherein, the reaction chamber of vacuum is provided with MOCVD systems, chip tray is arranged in reaction chamber, is led to
Cross inlet duct (such as spray head) to introduce reaction gases into reaction chamber, and be transported to and be placed on pallet
The surface of multiple chips processed, in order to ensure that reaction is uniform during generation crystal structure, chip tray bag
Tray body 30 is included, the boss 32 at the lower surface center of tray body 30 is arranged at and is connected to the following table of boss 32
The rotary connector 34 in face；12 upper surfaces of support shaft are provided with pit, and it is recessed that rotary connector 34 inserts this
Hole is engaged with pit, so as to realize support and rotation driving of the support shaft 12 to pallet, while in order to ensure
Temperature needed for generation crystal structure, then tray body 30 be placed in the top of heating element heater 22, can not only make to lead to
Cross the lower surface of tray body 30 and absorb the heat that heating element heater 22 is distributed upwards, and because boss 32 is (convex by it
Platform 32) adjacent heating element 22 surround, and the side of boss 32 can also be absorbed to adjacent heating element 22 and distribute
Heat, the center temperature of tray body 30 and the neighboring area of tray body 30 is kept basically identical,
Temperature homogeneity has larger improvement.Therefore, the center of tray body 30 (tray body 30 is disc-shape)
May also be used for placement epitaxial wafer or pallet can place bigger epitaxial wafer, so that tray body upper surface
The recessed disk for placing epitaxial wafer is provided centrally with, or tray body upper surface is centrally located at outside for placing
Prolong in the recessed disk of piece.When motor etc. drives support shaft 12 to rotate at a high speed, can be by support shaft and rotatable connection
The mutual cooperation of part 34, drives whole chip tray to rotate at a high speed.Additionally, being used between pallet and support shaft
This way of contact, it would be preferable to support manipulator passes disk automatically.It is to be noted that the adjacent heating element of boss 32
22 be can be used for heating tray body 30, i.e., the heat that the adjacent heating element 22 of boss 32 is distributed is removed
Passed to outside boss 32 to side, moreover it is possible to be passed up to tray body 30.
Fig. 4 shows second structural representation of embodiment of a kind of chip tray provided according to the present invention.This
In embodiment, a kind of chip tray even, in MOCVD systems, MOCVD systems to include support
Axle 52 and heating element heater 62, chip tray include tray body 40, are arranged at tray body lower surface center
Boss 42 and be connected to the rotary connector 44 of boss lower surface；Tray body 40 is placed in heating element heater 62
Top, the heat that heating element heater 62 is distributed upwards is absorbed by the lower surface of tray body 40, support shaft 52
Upper surface is provided with pit 521, and the insertion pit 521 of rotary connector 44 simultaneously coordinates so as to real with pit 521
Existing support and rotation driving of the support shaft 52 to pallet.Boss 42 is heated adjacent to its (boss 42) by it
Element 62 surround.When motor etc. drive support shaft 52 rotate when, can by pit 521 be rotatably connected
The frictional drive of part 44, drives whole chip tray high speed rotary motion, and in the present embodiment, pit 521 is excellent
Elect cone as, rotary connector 44 is also correspondingly cone.
Wherein, general tray body 40 uses graphite material, for placing chip when epitaxial wafer grows.And
Boss 42 and rotary connector 34 are it is also preferred that using graphite material, boss 42, rotary connector 44 and pallet
Body 40 can be integrally formed entirety, or cooperation is formed.Boss 42 can be round platform, circle
The shapes such as post, do not limit.Boss 42 absorbs the neighbouring heating unit around boss 42 as thermal store
The heat of part 62.Further, the heat that the adjacent heating element 62 of boss 42 is distributed is removed and passed to side
Outside boss 42, moreover it is possible to be passed up to tray body 40.Wherein, it is provided with the anti-of vacuum in MOCVD systems
Chamber is answered, chip tray is arranged in reaction chamber, drawn reacting gas by inlet duct (such as spray head)
Enter in reaction chamber, and be transported to the surface of the multiple chips being placed on pallet to be processed, set on pallet
There are multiple structures for placing chip, generally recessed disk.
Heating element heater 62 preferably uses heater strip, and the thickness of boss 42 is more than or equal to one layer of thickness of heater strip
Degree, so that the area that the absorbable heater strip in the side of boss 42 distributes heat is bigger, it is ensured that at least one layer heating
Side heat of the silk to boss 42.Further, two-layer or two can be used near the side of boss 42
Heater strip more than layer surround, so that the absorption heat of boss 42 is more abundant, support shaft heat is better balanced
It is lost in the influence to tray body surface temperature.
In an alternative, the lower surface of boss 42 is parallel with the lower surface of tray body, and at least
One layer of lower surface of heater strip is higher than the bottom surface of boss 42, such as in accompanying drawing 4, is looped around adding for the side of boss 42
Heated filament is 3 layers (or can also be 2 layers or more layers), wherein having the lower surface of two-layer heater strip higher than convex
The bottom surface of platform 42.Further, heater strip can also be around the upper end of support shaft 52, it is ensured that the side of boss 42
Face can fully receive heat, and then ensure the lifting of the central temperature of tray body 40.But no matter which kind of situation,
Boss 42 and support shaft 52 are surround by two-layer above heating element heater, i.e., at least one layer heating element heater (example
Such as heater strip) lower surface higher than boss 42 lower surface in the case of, near boss 42 and support shaft 52
Or adjacent place has two-layer or more layer heating element heater around boss 42 and support shaft 52.Furthermore it is preferred that,
Upper surface area of the lower surface area of boss 42 more than rotary connector 44.
In the present embodiment, can not only make to be distributed upwards by the lower surface of tray body 40 absorption heating element heater 62
Heat, and the heat that distributes of heating element heater 62 is absorbed by boss 42, make the center temperature of tray body 40
Degree can keep basically identical with the neighboring area of tray body 40, and temperature homogeneity has larger improvement, makes pallet
The center of body 40 may also be used for placement epitaxial wafer or pallet and can place bigger epitaxial wafer, that is,
Tray body center can be provided with the recessed disk 44 for placing epitaxial wafer, or tray body upper surface center
In the recessed disk for placing epitaxial wafer.And pallet can rotate relative to support shaft 52, make chip tray still
Can at a high speed rotate and be easy to manipulator to pass disk automatically.
Fig. 4 and Fig. 5 show a kind of structural representation of the MOCVD system embodiments provided according to the present invention.
In the present embodiment, MOCVD systems include chip tray, support shaft 52 and heating element heater 62, wherein
Chip tray includes tray body 40, is arranged at the boss 42 at the lower surface center of tray body 40 and is connected to
The rotary connector 44 of the lower surface of boss 42；The upper surface of support shaft 52 is provided with pit 521, and rotation connects
Fitting inserts pit 521 and is engaged with pit 521；Tray body 40 is placed in the top of heating element heater 62,
And the boss 42 is surround by its adjacent heating element.Chip tray can use the scheme of previous embodiment,
Particularly second scheme of embodiment.
When extension is reacted, the side of boss 42 receives the heat that the heating element heater 62 of neighbouring boss 42 is distributed.
Further, the heat that the adjacent heating element 22 of boss 42 is distributed is gone back in addition to boss 42 is passed to side
Tray body 40 can be passed up to.
Preferably, support shaft 52 is metal material, because heat dissipation metal is fast, in order to reduce what support shaft was brought
Thermal losses, is provided with the side of support shaft 52 and dead slot 523 is provided with inside groove 522 and/or support shaft.
It is to allow the boss 42 can to receive suitable heat from side, boss 42 will ensure certain thickness,
The thickness of usual boss 42 is set greater than or equal to one layer of thickness of heating element heater.In a kind of preferred realization
In mode, the lower surface of boss 42 is parallel with the lower surface of tray body 40, and one is used at neighbouring boss 42
Around boss 42, that is, it is higher than boss to have plane where the lower surface of at least one of which heater strip to layer above heater strip 62
Plane where 42 bottom surfaces, wherein heater strip 62 can also surround the top of support shaft 52, for example, in boss
42 and support shaft 52 nearby or adjacent place be provided with two-layer or more layer heating element heater 62 around boss 42 and branch
Support axle 52, heat is transmitted with to the side of boss 42.Ensure that the side of boss 42 can fully receive heat,
Ensure the lifting of tray body central temperature.
Further, tray body upper surface center can be provided with the recessed disk for placing epitaxial wafer, or
Tray body upper surface is centrally located in the recessed disk for placing epitaxial wafer.Due to the center temperature of tray body 40
Degree can keep basically identical with the neighboring area of tray body 40, and temperature homogeneity has larger improvement, makes pallet
The center of body 40 may also be used for placement epitaxial wafer or pallet and can place bigger epitaxial wafer.Support shaft
52 can drive rotation by drive devices such as motors, due to using tray body central support structure, when electricity drives
When dynamic support shaft 52 rotates, can be by the friction of the pit 521 on the top of support shaft 52 and rotary connector 44
Transmission, drives whole chip tray high speed rotary motion, while in order to ensure the temperature needed for generating crystal structure
Degree, not only tray body lower surface is heated element 62 and surrounds, and is heated element 62 by by boss 42
The heat that heating element heater 62 is distributed is absorbed around boss 42 is caused from side, makes tray body central temperature
Can keep basically identical with tray body neighboring area, temperature homogeneity has larger improvement.
As shown in fig. 6, sequence 1 is underlying curve, sequence 2 is curve above.Sequence 1
The radial distribution of temperature on prior-art pallet 10 is disclosed, i.e., from the center of circle to the distribution of circumferencial direction.Transverse axis
Relative distance is represented using 0-100, pallet radial distance 0 represents the center of circle of tray body, pallet radial distance
90 relative distances for representing effective working region peripheral distance center of circle on pallet 10, effective working region refers to everywhere
The region of pallet 10 that temperature difference is smaller, difference falls substantially within the specific limits (such as ± 5 DEG C).In extension
During reaction, epitaxial wafer is normally placed in effective working region to obtain epitaxial quality higher.Sequence 2 is this
Embodiment obtains effect, and displays temperature uniformity is greatly improved compared with prior art, the central area of tray body 40
Temperature and neighboring area it is unanimous on the whole, the central area of tray body 40 may also be used for place epitaxial wafer or
Tray body 40 can place bigger epitaxial wafer.
In sum, a kind of chip tray of the invention and MOCVD systems, this hair are realized using support
During disk body central supporting construction, tray body central temperature can keep basically identical with pallet neighboring area,
Temperature homogeneity has larger improvement, and tray body center is may also be used for placing epitaxial wafer or pallet can be with
Bigger epitaxial wafer is placed, and is made chip tray remain to rotate at a high speed and is easy to manipulator etc. to pass disk automatically.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.
Any person skilled in the art can all enter under without prejudice to spirit and scope of the invention to above-described embodiment
Row modifications and changes.Therefore, such as those of ordinary skill in the art without departing from institute of the present invention
All equivalent modifications completed under the spirit and technological thought of announcement or change, should be by right of the invention
It is required that being covered.
Claims (13)
1. a kind of chip tray, for MOCVD systems in, the MOCVD systems include support shaft
And heating element heater, it is characterised in that the chip tray includes tray body, is arranged at tray body following table
The boss at face center and the rotary connector for being connected to the boss lower surface；The upper surface of the support shaft sets
Pit is equipped with, the rotary connector inserts the pit and is engaged with the pit；The tray body
The heating element heater top is placed in, and the boss is surround by its adjacent heating element.
2. a kind of chip tray as claimed in claim 1, it is characterised in that described when extension is reacted
The side of boss receives the heat that the heating element heater of the neighbouring boss is distributed.
3. a kind of chip tray as claimed in claim 2, it is characterised in that the thickness of the boss is more than
Or equal to one layer of thickness of heating element heater.
4. a kind of chip tray as claimed in claim 3, it is characterised in that the lower surface of the boss and
The lower surface of tray body is parallel, and at least one layer lower surface of heating element heater is higher than the lower surface of the boss.
5. a kind of chip tray as described in any one in claim 1, it is characterised in that the pallet
Body upper surface is provided centrally with the recessed disk for placing epitaxial wafer, or tray body upper surface center
In the recessed disk for placing epitaxial wafer.
6. a kind of MOCVD systems, including chip tray, support shaft and heating element heater, it is characterised in that
The chip tray include tray body, be arranged at tray body lower surface center boss and be connected to described
The rotary connector of boss lower surface；The upper surface of the support shaft is provided with pit, the rotary connector
Insert the pit and be engaged with the pit；The tray body is placed in the heating element heater top, and
The boss is surround by its adjacent heating element.
7. MOCVD systems as claimed in claim 6, it is characterised in that when extension is reacted, institute
The side for stating boss receives the heat that the heating element heater of the neighbouring boss is distributed.
8. MOCVD systems as claimed in claim 7, it is characterised in that the neighbouring boss
Heating element heater be used for the tray body is heated.
9. MOCVD systems as claimed in claim 6, it is characterised in that the thickness of the boss is big
In or equal to one layer of thickness of heating element heater.
10. MOCVD systems as claimed in claim 9, it is characterised in that the lower surface of the boss
Lower surface with tray body is parallel, and at least one layer lower surface of heating element heater is higher than the following table of the boss
Face.
11. MOCVD systems as claimed in claim 10, it is characterised in that the boss and support shaft
It is surround by two-layer above heating element heater.
12. MOCVD systems as claimed in claim 6, it is characterised in that the tray body upper table
Face is provided centrally with the recessed disk for placing epitaxial wafer, or the tray body upper surface be centrally located at for
Place in the recessed disk of epitaxial wafer.
13. MOCVD systems as claimed in claim 6, it is characterised in that the material of the support shaft
It is metal, support shaft side is provided with inside groove and/or support shaft and is provided with dead slot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510836832.1A CN106801222B (en) | 2015-11-26 | 2015-11-26 | A kind of chip tray and MOCVD systems |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510836832.1A CN106801222B (en) | 2015-11-26 | 2015-11-26 | A kind of chip tray and MOCVD systems |
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| Publication Number | Publication Date |
|---|---|
| CN106801222A true CN106801222A (en) | 2017-06-06 |
| CN106801222B CN106801222B (en) | 2018-06-19 |
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| CN201510836832.1A Active CN106801222B (en) | 2015-11-26 | 2015-11-26 | A kind of chip tray and MOCVD systems |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110512191A (en) * | 2019-07-12 | 2019-11-29 | 郑州磨料磨具磨削研究所有限公司 | MPCVD device tray body, the tooling and method for determining MPCVD device support holder structure |
| CN114016003A (en) * | 2021-10-22 | 2022-02-08 | 宁波沁圆科技有限公司 | Reaction chamber of chemical vapor deposition device and chemical vapor deposition device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020185068A1 (en) * | 2001-06-07 | 2002-12-12 | Alexander Gurary | Reactor having a movable shutter |
| CN101922042A (en) * | 2010-08-19 | 2010-12-22 | 华晟光电设备(香港)有限公司 | Epitaxial wafer tray and support and rotation connecting device matched with same |
| CN103526186A (en) * | 2013-07-31 | 2014-01-22 | 中国电子科技集团公司第四十八研究所 | Wafer loading disc for MOCVD (metal organic chemical vapor deposition) reactor and MOCVD reactor |
| CN103811246A (en) * | 2012-11-14 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating device and plasma machining equipment |
-
2015
- 2015-11-26 CN CN201510836832.1A patent/CN106801222B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020185068A1 (en) * | 2001-06-07 | 2002-12-12 | Alexander Gurary | Reactor having a movable shutter |
| CN101922042A (en) * | 2010-08-19 | 2010-12-22 | 华晟光电设备(香港)有限公司 | Epitaxial wafer tray and support and rotation connecting device matched with same |
| CN103811246A (en) * | 2012-11-14 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating device and plasma machining equipment |
| CN103526186A (en) * | 2013-07-31 | 2014-01-22 | 中国电子科技集团公司第四十八研究所 | Wafer loading disc for MOCVD (metal organic chemical vapor deposition) reactor and MOCVD reactor |
Non-Patent Citations (1)
| Title |
|---|
| 杨绍胤: "《LED照明工程设计与施工》", 31 May 2013, 中国电力出版社 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110512191A (en) * | 2019-07-12 | 2019-11-29 | 郑州磨料磨具磨削研究所有限公司 | MPCVD device tray body, the tooling and method for determining MPCVD device support holder structure |
| CN110512191B (en) * | 2019-07-12 | 2021-05-14 | 郑州磨料磨具磨削研究所有限公司 | Tool and method for determining tray structure for MPCVD device |
| CN114016003A (en) * | 2021-10-22 | 2022-02-08 | 宁波沁圆科技有限公司 | Reaction chamber of chemical vapor deposition device and chemical vapor deposition device |
| CN114016003B (en) * | 2021-10-22 | 2024-01-09 | 宁波沁圆科技有限公司 | Reaction chamber of chemical vapor deposition device and chemical vapor deposition device |
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| CN106801222B (en) | 2018-06-19 |
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