CN103510158A - Compatible small-disk base for silicon carbide epitaxial furnace and using method thereof - Google Patents
Compatible small-disk base for silicon carbide epitaxial furnace and using method thereof Download PDFInfo
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- CN103510158A CN103510158A CN201310481819.XA CN201310481819A CN103510158A CN 103510158 A CN103510158 A CN 103510158A CN 201310481819 A CN201310481819 A CN 201310481819A CN 103510158 A CN103510158 A CN 103510158A
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- spacing annulus
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Abstract
The invention provides a compatible small-disk base for a silicon carbide epitaxial furnace and a using method thereof, and realizes multi-size compatible growth of silicon carbide epitaxial wafers on the same small-disk base. The compatible small-disk base comprises a disk base, an outer limiting circular ring and an inner limiting circular ring, wherein the middle part of the disk base is raised to form a disk platform for epitaxially growing the silicon carbide epitaxial wafers; the outer limiting circular ring is arranged at the edge of the disk platform in a sleeving manner; the upper surface of the outer limiting circular ring is higher than that of the disk platform; the inner limiting circular ring is separated and independent, and can be placed on the disk platform; the excircle diameter of the inner limiting circular ring is equal to or slightly smaller than the diameter of the disk platform; the inner circle diameter of the inner limiting circular ring is equal to or slightly greater than the diameter of a silicon carbide substrate for epitaxially growing each silicon carbide epitaxial wafer; the thickness of the inner limiting circular ring is equal to or slightly smaller than that of the silicon carbide substrate for epitaxially growing each silicon carbide epitaxial wafer.
Description
Technical field
The present invention relates to a kind of silicon carbide epitaxy wafer manufacture device, particularly the compatible shallow bid pedestal of silicon carbide epitaxy stove and using method thereof.
Background technology
Manufacturing silicon carbide semiconductor has the good characteristics such as large energy gap, good stability, high heat conductance, high critical breakdown strength, high saturated electron drift velocity, is the ideal semiconductor material of making high temperature, high frequency, high-power and severe radiation power electronic devices.Compare with traditional silicon device, silicon carbide device can work at 10 times under the strength of electric field of silicon device.For making the carbofrax material of silicon carbide device, be normally grown in the silicon carbide epitaxy wafer in silicon carbide substrates.At present silicon carbide epitaxial growth has been realized commercialization, conventionally adopts CVD(chemical vapour deposition) the method silicon carbide epitaxy wafer of growing.
Along with the progress of manufacturing silicon carbide semiconductor technology, industry application is more and more higher to the requirement of silicon carbide power device performance, and cost requirement is more and more lower.Along with device for high-power power electronic proposes higher requirement and demand to carborundum crystals and epitaxial material, increase the task of top priority that wafer size becomes carborundum crystals development.
In business silicon carbide epitaxy stove, in order to tackle the growth of different size silicon carbide epitaxy wafer, conventionally adopt the mode of changing shallow bid pedestal to carry out.As 2400 or 2800 serial silicon carbide epitaxy stoves of German Aixtron company, adopt independent 3 inches of shallow bids and 4 inches of shallow bids, while growing 3 inch silicon carbide epitaxial wafer, use 3 inches of corresponding shallow bids, while growing 4 inch silicon carbide epitaxial wafer, adopt 4 inches of shallow bids.After each shallow bid replacing, all to carry out the baking of equipment to remove the impurity such as steam of surface attachment, this has brought very large inconvenience to production, the production cost simultaneously also increasing.In addition, the shallow bid pedestal of plurality of specifications is used simultaneously, also to maintenance of the equipment, brings very large difficulty.
Summary of the invention
The present invention proposes the compatible shallow bid pedestal of silicon carbide epitaxy stove, solve existing silicon carbide epitaxy stove and changed different size shallow bid pedestal at the silicon carbide epitaxy wafer growth needs for different size, to production, bring problem constant and increase production cost, realized the many size compatibilities growths that realize silicon carbide epitaxy wafer on same shallow bid pedestal.
Technical scheme of the present invention is achieved in that
The compatible shallow bid pedestal of silicon carbide epitaxy stove, comprises disk pedestal and outer spacing annulus, and described disk pedestal middle part convexes to form one for the disk platform of epitaxy silicon carbide epitaxy wafer; Described outer spacing annulus is set in described disk platform edges edge, and the upper surface of outer spacing annulus is higher than the upper surface of disk platform, also comprises separately independently interior spacing annulus, and this interior spacing annulus can be positioned on described disk platform; The outside diameter of described interior spacing annulus is equal to or slightly less than the diameter of described disk platform, the interior circular diameter of described interior spacing annulus equals or is slightly larger than the diameter for the silicon carbide substrates of epitaxy silicon carbide epitaxy wafer, and the thickness of described interior spacing annulus is equal to or slightly less than the thickness for the silicon carbide substrates of epitaxy silicon carbide epitaxy wafer.
Preferably, described outer spacing annulus is silicon carbide annulus.
Preferably, described interior spacing annulus is silicon carbide annulus.
The method of using the compatible shallow bid pedestal of above-mentioned silicon carbide epitaxy stove epitaxy silicon carbide epitaxy wafer, comprises the following steps:
Step 1, choose the shallow bid pedestal that the diameter of disk platform is a and be placed on the deep bid pedestal of silicon carbide epitaxy stove;
When in step 2, the diameter b of silicon carbide substrates equals the diameter a of disk platform, directly silicon carbide substrates is positioned on the disk platform of shallow bid pedestal;
Known by above description, compared with prior art, tool of the present invention has the following advantages in the present invention:
The present invention has designed interior spacing annulus, when wanting the diameter of epitaxially grown silicon carbide epitaxy wafer to be less than the diameter of disk platform, can select the interior spacing annulus that an interior circular diameter is suitable with the diameter that should want the corresponding silicon carbide substrates of epitaxially grown silicon carbide epitaxy wafer, this interior spacing annulus is placed on disk platform, then the silicon carbide substrates of correspondingly-sized is placed in this interior spacing annulus, without changing whole shallow bid pedestal.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is decomposing state structural representation of the present invention;
Fig. 2 is assembled state structural representation of the present invention;
Fig. 3 is the structural representation of shallow bid pedestal of the present invention while being placed in the deep bid pedestal of silicon carbide epitaxy stove.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
See figures.1.and.2, the compatible shallow bid pedestal of silicon carbide epitaxy stove, spacing annulus 3 in comprising disk pedestal 1 and outer spacing annulus 2 and separating independently, described disk pedestal 1 middle part convexes to form one for the disk platform 11 of epitaxy silicon carbide epitaxy wafer; Described outer spacing annulus 2 is set in described disk platform 11 edges, and the upper surface of outer spacing annulus 2 is higher than the upper surface of disk platform 11, and described interior spacing annulus 3 can be positioned on described disk platform 11; The outside diameter of described interior spacing annulus 3 is equal to or slightly less than the diameter of described disk platform 11, the interior circular diameter of described interior spacing annulus 3 equals or is slightly larger than the diameter for the silicon carbide substrates 4 of epitaxy silicon carbide epitaxy wafer, and the thickness of described interior spacing annulus 3 is equal to or slightly less than the thickness for the silicon carbide substrates 4 of epitaxy silicon carbide epitaxy wafer.
Because the thermal conductivity of carbofrax material is high, can improve temperature homogeneity, therefore outer spacing annulus 2 of the present invention and interior spacing annulus 3 are all preferably used silicon carbide annulus, utilize the high heat conductance of silicon carbide to make silicon carbide wafer epitaxy more even.
With reference to Fig. 1-Fig. 3, interior spacing annulus 3 of the present invention can be used in combination with disk pedestal 1 and outer spacing annulus 2 according to actual needs, concrete, use the method for the compatible shallow bid pedestal of above-mentioned silicon carbide epitaxy stove epitaxy silicon carbide epitaxy wafer, comprise the following steps:
Step 1, choose the shallow bid pedestal 1 that the diameter of disk platform is a and be placed on the deep bid pedestal 5 of silicon carbide epitaxy stove;
When in step 2, the diameter b of silicon carbide substrates equals the diameter a of disk platform, directly silicon carbide substrates is positioned on the disk platform of shallow bid pedestal; Now, the silicon carbide epitaxy wafer interior epitaxy of spacing annulus limited range outside;
At present, on market, the silicon carbide epitaxy wafer size of main flow is 3 inches and 4 inches, for a better understanding of the present invention, the present embodiment take that to utilize the compatible epitaxy 3 inch silicon carbide epitaxial wafers of shallow bid pedestal for epitaxy 4 inch silicon carbide epitaxial wafers be example:
Select the shallow bid pedestal for epitaxy 4 inch silicon carbide epitaxial wafers, the diameter of its disk platform is 4 inches, for epitaxy 3 inch silicon carbide epitaxial wafers, selecting the diameter of silicon carbide substrates is 3 inches, the optimal selection of described interior spacing annulus is: outside diameter is 4 inches, and interior circular diameter is 3 inches.Interior spacing annulus can make the epitaxy in the scope of interior spacing annulus restriction of silicon carbide epitaxy wafer, avoids silicon carbide epitaxy wafer hypertrophy on the disk platform of 4 inches, and size exceeds, and uncontrollable problem.
In like manner, if epitaxially grown silicon carbide epitaxy wafer is 2 inches, the diameter of selecting silicon carbide substrates is 2 inches, and the interior circular diameter of interior spacing annulus is 2 inches.If the silicon carbide epitaxy wafer of growth is greater than 4 inches, the shallow bid pedestal that should selector disc platform diameter be greater than 4 inches, the selection of silicon carbide substrates and interior spacing annulus is selected according to the silicon carbide epitaxy wafer that will grow with reference to above-mentioned case.
In addition, existing silicon carbide epitaxy stove one stove is the silicon carbide epitaxy wafer of a plurality of same sizes of epitaxy simultaneously only, on the big disk pedestal 5 of same silicon carbide epitaxy stove, place the shallow bid pedestal of the same specification that a plurality of disk platform diameter are identical, realize a plurality of unidimensional silicon carbide epitaxy wafers of epitaxy, and the present invention can realize the silicon carbide epitaxy wafer of the multiple different size specification of mixed growth in a silicon carbide epitaxy stove, only need on the disk platform of the shallow bid pedestal of a plurality of same specifications, place spacing annulus in several different sizes.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (4)
1. the compatible shallow bid pedestal of silicon carbide epitaxy stove, comprises disk pedestal and outer spacing annulus, and described disk pedestal middle part convexes to form one for the disk platform of epitaxy silicon carbide epitaxy wafer; Described outer spacing annulus is set in described disk platform edges edge, and the upper surface of outer spacing annulus is higher than the upper surface of disk platform, it is characterized in that:
Also comprise and separate independently interior spacing annulus, this interior spacing annulus can be positioned on described disk platform; The outside diameter of described interior spacing annulus is equal to or slightly less than the diameter of described disk platform, the interior circular diameter of described interior spacing annulus equals or is slightly larger than the diameter for the silicon carbide substrates of epitaxy silicon carbide epitaxy wafer, and the thickness of described interior spacing annulus is equal to or slightly less than the thickness for the silicon carbide substrates of epitaxy silicon carbide epitaxy wafer.
2. the compatible shallow bid pedestal of silicon carbide epitaxy stove as claimed in claim 1, is characterized in that: described outer spacing annulus is silicon carbide annulus.
3. the compatible shallow bid pedestal of silicon carbide epitaxy stove as claimed in claim 1 or 2, is characterized in that: described interior spacing annulus is silicon carbide annulus.
4. right to use requires the method for the compatible shallow bid pedestal of the silicon carbide epitaxy stove described in any one epitaxy silicon carbide epitaxy wafer in 1-3, it is characterized in that, comprises the following steps:
Step 1, choose the shallow bid pedestal that the diameter of disk platform is a and be placed on the deep bid pedestal of silicon carbide epitaxy stove;
Step 2, to choose diameter be that the silicon carbide substrates of b is standby;
Step 3, when in step 2, the diameter b of silicon carbide substrates is less than the diameter a of disk platform, choosing outside diameter is that the interior spacing annulus that a and interior circular diameter are b is positioned on the disk platform in step 1, and then silicon carbide substrates is positioned in interior spacing annulus;
When in step 2, the diameter b of silicon carbide substrates equals the diameter a of disk platform, directly silicon carbide substrates is positioned on disk platform;
Step 4, build after silicon carbide epitaxy stove, start silicon carbide epitaxy stove.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310481819.XA CN103510158A (en) | 2013-10-15 | 2013-10-15 | Compatible small-disk base for silicon carbide epitaxial furnace and using method thereof |
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| CN201310481819.XA CN103510158A (en) | 2013-10-15 | 2013-10-15 | Compatible small-disk base for silicon carbide epitaxial furnace and using method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244030A (en) * | 2018-07-09 | 2019-01-18 | 浙江晶盛机电股份有限公司 | A kind of multiple-function chip substrate pedestal for epitaxial growth device |
| TWI649447B (en) * | 2017-01-25 | 2019-02-01 | 上海新昇半導體科技有限公司 | Separate base element for monolithic epitaxial furnace |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5685906A (en) * | 1995-03-23 | 1997-11-11 | Seh America, Inc. | Method and apparatus for configuring an epitaxial reactor for reduced set-up time and improved layer quality |
| JPH1126387A (en) * | 1997-06-30 | 1999-01-29 | Mitsubishi Materials Shilicon Corp | Wafer adapter and its using method |
| CN1434883A (en) * | 2000-05-08 | 2003-08-06 | Memc电子材料有限公司 | Epitaxial silicon wafer free from autodoping and backside halo |
| CN1782142A (en) * | 2004-11-16 | 2006-06-07 | 住友电气工业株式会社 | Wafer guide, MOCVD equipment, and nitride semiconductor growth method |
| CN101225544A (en) * | 2006-11-22 | 2008-07-23 | 硅电子股份公司 | Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer |
| CN101621022A (en) * | 2008-07-04 | 2010-01-06 | 广镓光电股份有限公司 | Combined type chip carrying disk and epitaxy machine platform thereof |
| US20100273314A1 (en) * | 2009-04-23 | 2010-10-28 | Tetsuya Ishikawa | Non-circular substrate holders |
| CN102677164A (en) * | 2011-03-18 | 2012-09-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray, chamber device and epitaxy equipment |
| CN202576645U (en) * | 2012-04-24 | 2012-12-05 | 浙江金瑞泓科技股份有限公司 | Graphite base |
| CN103074673A (en) * | 2012-12-26 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Substrate supporting structure and deposition device |
| CN203513831U (en) * | 2013-10-15 | 2014-04-02 | 瀚天天成电子科技（厦门）有限公司 | Silicon carbide epitaxial furnace compatible small disk base |
-
2013
- 2013-10-15 CN CN201310481819.XA patent/CN103510158A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5685906A (en) * | 1995-03-23 | 1997-11-11 | Seh America, Inc. | Method and apparatus for configuring an epitaxial reactor for reduced set-up time and improved layer quality |
| JPH1126387A (en) * | 1997-06-30 | 1999-01-29 | Mitsubishi Materials Shilicon Corp | Wafer adapter and its using method |
| CN1434883A (en) * | 2000-05-08 | 2003-08-06 | Memc电子材料有限公司 | Epitaxial silicon wafer free from autodoping and backside halo |
| CN1782142A (en) * | 2004-11-16 | 2006-06-07 | 住友电气工业株式会社 | Wafer guide, MOCVD equipment, and nitride semiconductor growth method |
| CN101225544A (en) * | 2006-11-22 | 2008-07-23 | 硅电子股份公司 | Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer |
| CN101621022A (en) * | 2008-07-04 | 2010-01-06 | 广镓光电股份有限公司 | Combined type chip carrying disk and epitaxy machine platform thereof |
| US20100273314A1 (en) * | 2009-04-23 | 2010-10-28 | Tetsuya Ishikawa | Non-circular substrate holders |
| CN102677164A (en) * | 2011-03-18 | 2012-09-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray, chamber device and epitaxy equipment |
| CN202576645U (en) * | 2012-04-24 | 2012-12-05 | 浙江金瑞泓科技股份有限公司 | Graphite base |
| CN103074673A (en) * | 2012-12-26 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Substrate supporting structure and deposition device |
| CN203513831U (en) * | 2013-10-15 | 2014-04-02 | 瀚天天成电子科技（厦门）有限公司 | Silicon carbide epitaxial furnace compatible small disk base |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI649447B (en) * | 2017-01-25 | 2019-02-01 | 上海新昇半導體科技有限公司 | Separate base element for monolithic epitaxial furnace |
| CN109244030A (en) * | 2018-07-09 | 2019-01-18 | 浙江晶盛机电股份有限公司 | A kind of multiple-function chip substrate pedestal for epitaxial growth device |
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