CN1434883A - Epitaxial silicon wafer free from autodoping and backside halo - Google Patents

Abstract

A single crystal silicon wafer with a back surface free of an oxide seal and substantially free of a chemical vapor deposition process induced halo and an epitaxial silicon layer on the front surface, the epitaxial layer is characterized by an axially symmetric region extending radially outwardly from the central axis of the wafer toward the circumferential edge of the wafer having a substantially uniform resistivity, the radius of the axially symmetric region being at least about 80 % of the length of the radius of the wafer.

Description

Eliminate the epitaxial silicon wafer of doping automatically and back side haloing

Background of invention

The present invention relates generally to prepare in the manufacturing of electronic unit, use the preparation of semiconductive material substrate, particularly silicon wafer.More specifically, the present invention relates to have the silicon single crystal wafer that the automatic doping minimizing and the back side do not have the silicon epitaxial layers of haloing.

In by the manufacturing of cutting krousky (Czochralski) method growing single-crystal silicon, at first in quartz crucible, melt polysilicon with or without doping agent.After polysilicon thawing and the temperature equalisation, seed crystal is immersed in the molten mass, extracts subsequently and forms silicon single crystal ingot, rotates quartz crucible simultaneously.Silicon single crystal ingot is cut into each silicon wafer subsequently, and silicon wafer will carry out several treatment steps, comprises grinding/friction, and corrosion and polishing are to prepare the finished silicon wafer that the front has specular gloss.Except polishing the front, many device manufacturer also need to have the polished back face (this wafer is called " twin polishing " usually) of specular gloss.Prepare and be used for the finished product wafer that device is made, can carry out for example epitaxial deposition process of chemical vapor deposition process to wafer, growth on the front of wafer usually about 0.1 and about 200 micron thickness between silicon thin layer, device can directly prepare on epitaxial film thus.Conventional epitaxial deposition process is disclosed in U.S. patent No.5, in 904,769 and 5,769,942.

Epitaxial deposition process is made up of two steps usually.First step is after silicon wafer is loaded in the deposition chamber and is put on the pedestal, send in about 1150 ℃ of fronts to wafer clean air for example the mixture of hydrogen or hydrogen/hydrochloric acid with the front of " prebake " and clean silicon wafer, and remove this lip-deep any natural oxide, silicon epitaxial layers is grown on the front continuously and equably.In second step of epitaxial deposition process, under about 800 ℃ or higher temperature to the front of wafer send into vapour phase silicon source for example silane or trichlorosilane with deposit on the front and growth of epitaxial silicon layer.During two steps of epitaxial deposition process, silicon wafer is by base supports in the extension deposition chamber, and pedestal is rotation usually during technology, to guarantee even grown epitaxial layer.Pedestal is made up of highly purified graphite usually, and has the silicon carbide layer that covers graphite fully, is discharged into the amount as pollutents such as iron in the surrounding environment to reduce during the high-temperature technology from graphite.The conventional pedestal that uses in epitaxial deposition process is known in the art, is presented in U.S. patent No.4, in 322,592,4,496,609,5,200,157 and 5,242,501.

Loading days, along with wafer is fallen pedestal, gas dam wafer " is floated " and be slipped on the pedestal be not the anticipation the position in (for example, the part the depression " container " outside).This causes uneven epitaxy.In addition, during the prebake step, as flowing around a small amount of Waffer edge of clean air between wafer and pedestal such as hydrogen and entering in the space between wafer and the pedestal.If with the back side of zone of oxidation (about 3000 are thick to about 5500 usually) sealing wafer, mobile hydrogen can not react with zone of oxidation fully so, produces pin hole or can not remove zone of oxidation fully in layer.If be corrosion or glazed surface and only contain thin oxide layer (about 15 are to about 30 usually) according to the needs back side of many device manufacturer, the mixture of hydrogen or hydrogen/hydrochloric acid can be removed near clean air natural oxidizing layer the outward flange of the mobile back side around wafer fully, the outward flange that leaves wafer along with corrosion moves inward, and produces pinhole openings and expose silicon face in natural oxidizing layer.These pinhole openings inwardly form annular zone in wafer perimeter usually.

During epitaxial deposition process, a spot of siliceous source gas also is flowing in around the Waffer edge between wafer and the pedestal, and enters in the space between wafer and the pedestal.If the back side oxide sealing of wafer has suppressed the nucleation and the growth of silicon fiml so basically.In natural oxide was cleaned the zone that gaseous corrosion falls fully, growth was level and smooth, the successive silicon layer.Yet in the zone that clean air is not removed natural oxidizing layer fully, the pin hole in the natural oxidizing layer exposes silicon wafer, and makes siliceous source gas deposit silicon and generating uneven silicon fiml during the epitaxial deposition on chip back surface in pin hole.Thus, for having the corrosion that natural oxidizing layer is only arranged or the wafer of polished back face, the pin hole that produces in natural oxidizing layer during the prebake step causes discontinuous silicon growth on the back side, seems fuzzy under strong illumination.This fuzzy or " haloing " on the chip back surface is made up of diameter about 0.5 micron and high about 10 millimicrons little silicon growth point or prominent.The prominent point scattering light of these silicon also causes fuzzy and is undesirable, is because they observe the optical pyrometric system of chip back surface during can disturbing mechanical video and device to handle.On the back side of the specular gloss of the wafer of twin polishing, under light and by the laser surface scanner, human eye can be seen haloing (referring to Figure 12 A) meticulously.By comparison, the more coarse back side of the wafer of single-sided polishing causes reflected light largely by diffuse scattering, has reduced the appearance of haloing.

Another problem that runs into during the high growth temperature of silicon epitaxial layers is the back side that outwards diffuses through silicon wafer during high temperature prebake and the epitaxial growth steps as dopant atoms such as boron or phosphorus.Adopt conventional pedestal, the dopant atom front towards wafer between Waffer edge and pedestal from the back side to external diffusion is oozed out.These dopant atoms have been introduced and have been stain the illuvium of growth and reduced near the resistivity evenness of Waffer edge.If use the back side of oxide seal silicon wafer, dopant atom basically can be from the back side to external diffusion so.Yet the silicon wafer doping agent during epitaxial deposition process with corrosion or polished back face causes positive undesirable automatic doping from the back side to the external diffusion meeting.

Now propose several method and attempted eliminating back side haloing and doping automatically.Be to eliminate back side haloing, Nakamura (Japanese laid-open patent application No.JP11-16844) disclosed before being loaded into wafer in the epitaxial reactor and the back side have been proceeded to many 10 days removal hydrogen fluoride and/or high-temperature hydrogen anneal.Technology has increased extra treatment step, has greatly increased the cost of complicacy and depositing technics.People such as Deaton (U.S. patent No.5,960,555) disclose a kind of utilization and along the pedestal of the built-in groove of Waffer edge Purge gas pilot flow direction Waffer edge have been prevented that positive reaction source gas from penetrating into the method for chip back surface.This arts demand is a large amount of revises existing epitaxial deposition chamber, and has increased purge gas flow and make Purge gas spill into the front and mixes with source gas, makes the degeneration of gained epitaxial film.

For reducing automatic doping, Hoshi (Japanese laid-open patent application No.JP11-87250) discloses at the edge of pedestal and has used the boron dope agent on the vacuum attraction discharge susceptor edges and prevent automatic doping.This technogenic influence the homogeneity and the thickness of Waffer edge, and need a large amount of existing epitaxial deposition system of revising.Nakamura (Japanese laid-open patent application No.JP10-223545) discloses a kind of improved pedestal, on the edge of pedestal slit is arranged, and is pressed down to the dopant atom of external diffusion thus and passes slit and enter in the gas barrier.This method also makes a large amount of deposited gas be discharged to below the back side of wafer, and there is the problem of security in the exhaust system that caused the halo effect introduced in the past and premature corrosion.

Up to the present, prior art openly during the epitaxial deposition process on the control semiconductor back surface halo effect and with doping agent from the back side satisfactory method to the relevant automatic doping problem of external diffusion.Thus, need in semi-conductor industry that a kind of effective measure to be to solve halo effect and the positive undesirable automatic doping of silicon wafer during the epitaxial deposition process simply, cheaply.

Summary of the invention

Therefore the purpose of this invention is to provide a kind of silicon single crystal wafer, (a) have the epitaxial surface that is not subjected to gas phase to mix and influence automatically basically; And the back side that (b) has no haloing.

Therefore, in brief, the present invention relates to a kind of silicon single crystal wafer, comprise silicon wafer substrate, the radius that substrate has central shaft, common front and back perpendicular to central shaft, circumferential edge and extends to the wafer circumferential edge from central shaft.The back side of wafer does not have the oxide compound of sealing, and the haloing that does not have chemical vapor deposition process to introduce basically.In addition, silicon wafer substrate comprises P type or N type dopant atom.Silicon single crystal wafer also comprises the silicon epitaxial layers on the silicon wafer substrate front.Silicon epitaxial layers is characterised in that the axial symmetry district that extends radially outwardly from central shaft towards circumferential edge, and wherein resistivity is even basically.Axially the radius in symmetry district is at least about 80% substrate radius length.Silicon epitaxial layers also comprises P type or N type dopant atom.

The invention still further relates in the chemical vapour deposition chamber technology of growth of epitaxial silicon layer on the silicon wafer substrate.This technology comprises with the front of clean air contact silicon wafer substrate and the whole basically back side of silicon wafer substrate, removes zone of oxidation from the front and back of silicon wafer substrate.Remove after the zone of oxidation, outer layer growth is on the front of silicon wafer substrate.During the grown epitaxial layer, it is indoor that Purge gas is incorporated into chemical vapour deposition, to reduce the quantity that is incorporated into the dopant atom the silicon epitaxial layers from the back side of silicon wafer substrate to external diffusion.

The invention still further relates to by supporting the equipment of silicon wafer during the chemical vapor deposition process growth of epitaxial silicon layer.This equipment comprise by size make and configuration with the pedestal of support silicon wafer.Pedestal has opening density and is about 0.2 opening/cm ²With about 4 openings/cm ²Between the surface, this surface usually and silicon wafer relatively be arranged side by side.The back side that opening makes fluid pass the surface silicon wafer contacts.

The invention still further relates to the equipment that uses in epitaxial deposition process, wherein silicon epitaxial layers is grown on the silicon wafer substrate with front and back.This equipment comprises chamber, the wafer support that supports silicon wafer substrate and the rotatable device of supporting wafers bracing or strutting arrangement and silicon wafer substrate.Wafer support makes the front of fluid contact silicon wafer substrate and the whole basically back side of silicon wafer substrate.Equipment also comprises heating unit, makes clean air, source gas and the inlet mouth of Purge gas access arrangement and the venting port that makes above gas device for transferring.

Other purpose of the present invention and characteristics partly will be obviously, and part is pointed out hereinafter.

Brief description

Fig. 1 shows the structure that is used as the silicon single crystal wafer of parent material according to the present invention.

Fig. 2 is the sectional view of an embodiment of the wafer support of the present invention that intercepts in the plane of the line 26-26 of Fig. 3.

Fig. 3 is the vertical view of an embodiment of wafer support of the present invention.

Fig. 4 is an epitaxial reactor, shows along the sectional view of an embodiment of the wafer support of the present invention of the planar interception of the line 26-26 among Fig. 3.

Fig. 5 is the sectional view of an embodiment of wafer support of the present invention.

Fig. 6 is the sectional view of an embodiment of wafer support of the present invention.

Fig. 7 is an epitaxial reactor of the present invention, shows an embodiment of wafer support.

Fig. 8 is an epitaxial reactor of the present invention, shows an embodiment of wafer support.

Fig. 9 is an epitaxial reactor of the present invention, shows an embodiment of wafer support.

Figure 10 is an epitaxial reactor of the present invention, shows an embodiment of wafer support.

Figure 11 is the graphic representation of contrast resistivity distribution of the epitaxial film of deposit according to the present invention and on the silicon wafer of common process growth.

Figure 12 comprises two relatively fuzzy shape appearance figures of haloing degree on the back side of epitaxial wafers.Figure 12 A is not for there being the wafer shape appearance figure of sealing backside after the epitaxy of using the common process manufacturing.Figure 12 B is the wafer shape appearance figure that epitaxy constructed in accordance does not have sealing backside afterwards.

Shape appearance figure is received on the surface of pattern (nanotopography) received that Figure 13 contains the front of comparison epitaxial wafer.Figure 13 A is the shape appearance figure of the wafer of the conventional pedestal manufacturing of use.Figure 13 B is the shape appearance figure of the wafer of use porous pedestal manufacturing.

Figure 14 shows according to a preferred embodiment of the invention, and the oxygen deposition thing (precipitate) of the wafer of preparation distributes.

Figure 15 is the EPI CENTURA at reaction indoor positioning wafer ^(Applied Materials, Santa Clara, CA) synoptic diagram of the middle mechanism that uses.In the drawings, base supports axle 105 and wafer lift axle 107 are in and shift one's position.

Figure 16 is the EPI CENTURA at reaction indoor positioning wafer ^The synoptic diagram of the middle mechanism that uses, wherein base supports axle 105 and wafer lift axle 107 are in original position.

Figure 17 is the EPI CENTURA at reaction indoor positioning wafer ^The synoptic diagram of the middle mechanism that uses.In the drawings, base supports axle 105 and wafer lift axle 107 are in and handle the position.

Figure 18 is the EPI CENTURA at reaction indoor positioning wafer ^The synoptic diagram of the middle mechanism that uses.The figure shows according to the present invention the optimum position that cools off wafer base supports axle 105 and wafer lift axle 107 when influencing distribution of crystal lattice vacancies in the wafer fast.

Figure 19 is the EPI CENTURA of the reaction indoor positioning wafer of Figure 15 ^The vertical view of the middle mechanism that uses.

Corresponding reference numeral corresponding components in all figure.

DETAILED DESCRIPTION OF THE PREFERRED

According to the present invention, now developed and comprised the front of essentially no automatic adulterated silicon epitaxial layers deposit on it and the silicon single crystal wafer at the back side of oxide-free sealing ply and haloing.

A. Silicon wafer substrate

Parent material of the present invention is preferably the monocrystalline silicon wafer substrate of having downcut from the single crystal rod of growing according to the czochralski crystal growth method of any routine.The wafer substrates of anaerobic if desired, parent material preferably downcuts from the single crystal rod according to the float-zone crystal growth method growth of any routine so.Silicon section, grinding, corrosion and the polishing technology of growing silicon ingot and standard is known in the art, for example, is disclosed in F.Shimura, Semiconductor Silicon Crystal Technology (Academic Press, 1989); And Silicon Chemical Etching (J.Grabmaier, ed., Springer-Verlag, New York, 1982).

With reference to figure 1, silicon single crystal wafer 1 comprises wafer substrates 4, wafer substrates 4 preferably have central shaft 8, usually perpendicular to virtual center face 7 between the front 3 of central shaft and the back side 5, the front and back, in conjunction with positive 3 and the circumferential edge 2 at the back side 5 and the radius 9 that extends to circumferential edge 2 from central shaft.The back side does not have the oxide seal layer.Should notice that the mid point between each point on the front and each on the back side point does not accurately drop in the plane because silicon wafer has some total thickness variation (TTV), warpage and bending usually.Yet in fact, total thickness variation, warpage and bending are very light usually, we can say near mid point, drop between the front and back in the equally spaced substantially virtual center face.

Wafer contains one or more doping agents makes wafer obtain the characteristic of various needs.For example, wafer can be P type wafer (that is a kind of element of the III family of the wafer doping periodic table of elements,, for example boron, aluminium, gallium and indium, the most frequently used is boron) or N type wafer (that is a kind of element of the V family of doped element periodictable,, for example phosphorus, arsenic, antimony, the most frequently used is phosphorus).Preferably, wafer is to have from about 100 Ω-cm to about 0.005 Ω-the P type wafer of cm resistivity.For boron doped silicon, above resistivity value corresponds respectively to about 2.7 * 10 ¹⁷Atom/cm ³To about 2 * 10 ¹⁹Atom/cm ³Concentration of dopant.In specific preferred embodiment, wafer is to have about 20 Ω-cm (to be called P usually to the P type wafer of about 1 Ω-cm resistivity ^-Silicon).In another certain preferred embodiment, wafer be have from about 0.01 Ω-cm to about 0.005 Ω-the P type wafer of cm resistivity (is called P usually ⁺⁺Silicon).In another certain preferred embodiment, wafer be have from about 0.03 Ω-cm to about 0.01 Ω-the P type wafer of cm resistivity (is called P usually ⁺Silicon).

Use the wafer of Czochralski method preparation to have usually from about 5 * 10 ¹⁷Atom/cm ³To about 9 * 10 ¹⁷Atom/cm ³Oxygen concn (in other words) (ASTM standard F-121-80) from about 10ppm to about 18ppm (that is, in wafer in per 1,000,000 total atom about 10 to 18 Sauerstoffatoms), preferably about 6 * 10 ¹⁷Atom/cm ³To 8.5 * 10 ¹⁷Atom/cm ³(that is, about 12ppm is to 17ppm).

B. Silicon epitaxial layers

Silicon single crystal wafer prepared in accordance with the present invention comprises the surface of silicon epitaxial layers deposit on it.Epitaxial film can be deposited on the entire wafer, perhaps only is deposited on the part wafer.With reference to figure 1, epitaxial film 10 is deposited on the front 3 of crystal face, and on the whole front of preferred wafer.Epitaxial film whether preferential deposition depends on the practical application of wafer on other any part of wafer.For most application, it is inessential whether epitaxial film is present in any other parts of wafer.

The silicon single crystal wafer that downcuts from the ingot of Czochralski method preparation has the primary pit of crystal (" COPs ") through their surface of being everlasting.Yet the wafer surface that need be used for the unicircuit manufacturing does not usually have COP basically.By silicon epitaxial layers being deposited to the surperficial wafer that does not have COP basically of preparation on the wafer surface.This epitaxial film is filled among the COP, finally obtains slick wafer surface.This has become the theme of recent scientific research.Referring to people such as Schmolke, The Electrochem.Soc.Proc.PV98-1 volume, 855 pages (1998); People Jpn.J.Appl.Phys.36 such as Hirofumi volume, 2565 pages (1997).Usually, used thickness is at least about the COP on the silicon epitaxial layers elimination wafer of 0.1 μ m.Preferably, epitaxial film has the thickness at least about 0.1 μ m and about at the most 2 μ m.More preferably, epitaxial film has the thickness from about 0.25 μ m to about 1 μ m, most preferably the thickness from about 0.5 μ m to about 1 μ m.

Should notice that except the purpose of eliminating COP the thickness that also needs epitaxial film is greater than the preferred thickness of eliminating COP.For example, if eliminate outside the COP, epitaxial film is used for giving wafer surface with electrical characteristic, and the thickness of epitaxial film can reach about 200 μ m.Usually, the about 1 μ m of thickness that gives the epitaxial film of electrical characteristic deposit arrives about 100 μ m, and preferred about 2 μ m are to about 30 μ m.More preferably, obtain extra required effect with minimum thickness (for example about 3 μ m).

Preferably, the thickness of epitaxial film is even.The thick consistency on whole surface is preferably less than about 1% to about 5% of target thickness on the wafer.Thus, if the about 3 μ m of target thickness, the thickness difference on entire wafer surface preferably arrives about 150nm less than about 30nm so.More preferably, the thickness difference on entire wafer surface arrives about 100nm less than about 30nm.Usually use the thickness of Fourier transform infrared spectroscopy assay method (FTIR) several point measurement epitaxial films on wafer surface.For example, FTIR is used to measure near center wafer and near the epitaxy layer thickness of 4 points of circumferential edge (for example, about 90 ° separately and from the inside point of about 5-10nm of circumferential edge).

The second method that embodies wafer of the present invention is the wafer surface height change that is called " receive pattern "---and variation in thickness on the local surface areas (for example, wafer surface is divided into empty square unit 0.5mm * 0.5mm, 2mm * 2mm or 10mm * 10mm).The pattern of receiving mainly is owing to the wafer technique as grinding, corrosion and polishing etc., yet the variation in the epitaxy layer thickness also is a major reason.Along with the critical structures size of photoetching reduces, silicon wafer must satisfy than the stricter in the past pattern standard of receiving (at present, the about 0.15 μ m of the state of existing critical structures size is to about 0.18 μ m).Silicon epitaxial layers receive morphology change mainly be since during the epitaxial deposition process nonuniform heating of wafer in wafer, produce thermal gradient.The major cause of nonuniform heating is owing to bigger molding (liftpin) pin hole in the pedestal, makes the heating temperature that is located immediately at wafer area on the pinhole for pattern drawing different with the temperature of material around.The material (for example, graphite, silicon carbide and quartz) that constitutes picker also can cause the wafer area on the picker to be heated to differing temps.Temperature official post epitaxial film is with the growth of different speed, causes local thickness to change (for example, 40nm, 60nm, or bigger), is called pin mark usually.

In one embodiment of the invention, for 0.5mm * 0.5mm receive pattern preferably less than the target thickness of about 1% epitaxial film, be more preferably less than about 0.7% target thickness, be more preferably less than about 0.3% target thickness.Thus, for the epitaxial film of 3 μ m, for 0.5mm * 0.5mm receive pattern preferably less than about 30nm, be more preferably less than about 20nm, be more preferably less than about 10nm.In another embodiment of the present invention, for 2mm * 2mm receive pattern preferably less than the target thickness of about 1% epitaxial film, be more preferably less than about 0.7% target thickness, be more preferably less than about 0.3% target thickness.In additional embodiment, receive pattern preferably less than the target thickness of about 3% epitaxial film for 10mm * 10mm.

C. Epitaxial growth technology

As mentioned above, the wafer of the wafer of the one-sided polishing of back side corrosive and bilateral polishing has natural oxidizing layer on front and back.According to the present invention, epitaxial deposition process is included in positive going up before the deposit epitaxial film, removes natural oxidizing layer on the front of wafer and the whole basically back side.Preferably finish removing of silicon oxide layer up to remove silicon oxide layer from the surface by heated chip surface in the atmosphere that does not have oxide compound basically (atmosphere that preferably, does not have oxide compound).In specific preferred embodiment, wafer surface is heated to temperature at least about 1100 ℃, more preferably at least about 1150 ℃ temperature.Preferably carry out described heating and simultaneously the whole front and the whole basically back exposure of wafer are arrived clean air, clean air comprises rare gas element (for example, He, Ne or Ar), H ₂, HF gas, HCl gas or their combination.More preferably, clean air comprises H ₂Or H ₂Combination with HCl.Most preferably, clean air is basically by H ₂Form.Though should note using and contain N ₂Atmosphere, but because they are easy to form from the teeth outwards nitride, and nitride can disturb lip-deep subsequently epitaxial deposition, therefore not preferred this atmosphere.The flow velocity of clean air is usually between 1 liter/minute and about 50 liters/minute, preferably between 10 liters/minute and about 20 liters/minute, at least about 10 seconds.

The back exposure of wafer is removed natural oxidizing layer to clean air reduced or eliminated the halo effect that causes by the pin hole in the natural oxidizing layer basically.In other words, removing natural oxide obtains with the naked eye can not seeing haloing under wafer inspection high light or laser surface scanner chip back surface before the growth of epitaxial silicon layer.

Remove before the natural oxidizing layer or during, preferred heated chip under the speed that can not cause sliding.More specifically, if heated chip is too fast, produce thermal gradient, forming internal stress is enough to make the Different Plane in the wafer to move (that is, sliding) mutually.From about below 750 ℃ to about 800 ℃, being heated fast of wafer can not produce significant slip, however between about 800-900 ℃ to about 1150-1200 ℃, the thermogenesis that is subjected to fast of wafer is slided.Have now found that light dope wafer (for example, boron-doping and have the wafer of about 1 Ω-cm to about 100 Ω-cm) is easy to slide especially.For avoiding this problem, preferably under removing temperature to silicon oxide, with the mean rate heated chip of about 20 ℃/sec to about 35 ℃/sec from about 800-900 ℃.

After the front and back of wafer is removed the natural oxide layer, the clean air that stops to flow, with the temperature regulation in the reaction chamber between about 600 ℃ and about 1200 ℃, preferably at least about 1100 ℃, more preferably at least about 1150 ℃.The front of wafer contacts siliceous source gas then, and epitaxial film is deposited on the front.Preferably, remove after the natural oxide, surperficial contact source gas is less than 30 seconds, more preferably removes after the natural oxide in about 20 seconds, more preferably removes after the natural oxide in about 10 seconds.Remove and wait for 10 seconds of initial silicon deposit after the silicon oxide layer, make the temperature-stable of wafer and evenly.

Preferably carry out epitaxial deposition by chemical vapour deposition.In general, chemical vapour deposition for example is included in extension vapour-phase reaction chamber, EPI CENTURA ^(Applied Materials, Santa Clara are exposed to siliceous atmosphere with wafer surface in CA).In a preferred embodiment of the invention, the surface of wafer is exposed in the atmosphere that comprises volatile gas, and volatile gas comprises silicon (for example, SiCl ₄, SiHCl ₃, SiH ₂Cl ₂, SiH ₃Cl or SiH ₄).Atmosphere also preferably contains carries gas (H most preferably ₂).In one embodiment, the silicon source is SiH during the epitaxial deposition ₂Cl ₂Or SiH ₄If use SiH ₂Cl ₂, the chamber pressure during the deposit preferably from about 500 to about 760Torr.On the other hand, if use SiH ₄, the preferably about 100Torr of chamber pressure so.More preferably, the silicon source during the deposit is SiHCl ₃This source is more cheap than other source.In addition, under atmospheric pressure use SiHCl ₃Epitaxial deposition.This is very favourable to be owing to do not need vacuum pump, and reaction chamber needn't be very solid caves in preventing.In addition, exist less safety unexpected, and air leak is less to the chance in the reaction chamber.

During epitaxial deposition, the temperature of wafer surface preferably remains on is enough to prevent that siliceous atmosphere is deposited to polysilicon the temperature on surface.Usually, surperficial during this period temperature is at least about 900 ℃.More preferably, Biao Mian temperature remains on from about 1050 to about 1150 ℃.More preferably, Biao Mian temperature remains on silicon oxide and removes temperature.

When under atmospheric pressure carrying out deposit, the preferably about 3.5 μ m/min of the growth velocity of epitaxial film are to about 4.0 μ m/min.For example pass through basically by about 2.5mole% SiHCl ₃With about 97.5mole% H ₂The atmosphere of forming under about 1050 ℃ to 1150 ℃ temperature, arrives about 20 liters/minute flow velocity with about 1 liter/minute and obtains.

If the planned use of wafer needs epitaxial film to comprise doping agent, so siliceous atmosphere also preferably contains doping agent.For example, for the usually preferred boracic of epitaxial film.For example during deposit, comprise B ₂H ₆Atmosphere in this layer of preparation.Obtain the B in the atmosphere that desired characteristic (for example, resistivity) needs ₂H ₆Molar fraction depend on several factors, for example during the epitaxial deposition from specific substrate to the boron amount of external diffusion, the N type doping agent that reaction chamber and substrate, exists and quantity and the chamber pressure and the temperature of N type doping agent as impurity.Similar with wafer substrates, can control concentration of dopant in the epitaxial film to obtain the resistivity of relative broad range.For example, following about 0.03ppm (that is per 1,000, the 000 mole about 0.03 mole of B of total gas, of the pressure that has used about 1125 ℃ about 1atm of temperature ₂H ₆) B ₂H ₆Atmosphere obtain having the epitaxial film of the resistivity of about 10 Ω-cm.

The front of silicon wafer contacts siliceous source gas simultaneously, and it is indoor that Purge gas is incorporated into chemical vapour deposition, to reduce from the quantity of the dopant atom of the back side in external diffusion is incorporated into the epitaxial film that is grown on the front wafer surface of wafer.Purge gas comprises nitrogen, argon gas, hydrogen, as the silicon-containing gas of trichlorosilane or their mixture.For example, as the Epsilon that uses ASM to make ^During epitaxial reactor, Purge gas preferably with the component identical (for example, the mixture of trichlorosilane and hydrogen) of epitaxial deposition gas.Usually, the flow velocity of Purge gas is between about 1 liter/minute and about 50 liters/minute, preferably between about 10 liters/minute and about 20 liters/minute.

Basically the whole back exposure of wafer is directly taken away from the front from the outside diffusing atom at the back side to Purge gas, has reduced or eliminated them thus and has been incorporated in the epitaxial film that is deposited near the annular zone place of substrate circle periphery.The resistivity of epitaxial film is not subjected to automatically to mix to influence basically thus, promptly since automatically the minimizing of doped resistor rate preferably, be more preferably less than about 2% less than about 10% less than about 5%.With reference to figure 1, the area attribute of the epitaxial film 10 that not being subjected to basically mixes automatically influences is that circumferential edge 2 has the radius at least about 80% substrate, 9 radius length from the central shaft 8 outside axial symmetry districts 6 of radially extending towards circumferential edge 2.Preferably, axially the radius in symmetry district 11 at least about 85%, 90%, 95% or 100% substrate 9 radius length.

In case formed epitaxial film, preferably used rare gas element, H with desired thickness ₂Or their combination, more preferably only use H ₂Be blown into siliceous atmosphere from reaction chamber.After this, preferably wafer is cooled to handle the temperature that do not produce damage simultaneously (be not more than about 800-900 ℃ usually, yet some equipment can be handled wafer being higher than basically under about 900 ℃ temperature), from the epitaxial deposition chamber, removes wafer then.

D. The epitaxial deposition reactor

As mentioned above, prepare wafer of the present invention by epitaxial deposition process: (a) remove natural oxidizing layer from the front and back of wafer in conjunction with several distinct steps; (b) arrive siliceous source gas, growth of epitaxial silicon layer on the front of wafer by face exposure with wafer; And (c) with the back exposure of wafer to Purge gas.To in an epitaxial deposition process, finish above step, need to revise epitaxial deposition reactor of the present invention so that process gas flows to the front and back of wafer.

Usually, the epitaxial deposition reactor comprises the chamber that is made of quartz usually, makes process gas enter the inlet mouth of reactor, remove the venting port of process gas from reactor, the heating unit of heating silicon wafer, the pedestal of supporting wafers, and the rotatable device of supporting base and wafer.In the present invention, pedestal can be with allowing fluid contact wafer wafer support positive and the entire wafer back side basically to replace.Advantageously, loading days allows fluid contact wafer front and back to eliminate " floating " basically.In addition, wafer support makes the clean air that uses in the prebake step of epitaxial deposition process contact the entire wafer back side basically, and chemically removed whole basically natural oxidizing layer, thus during outer layer growth, during the gas contact silicon wafer back side, source, the silicon layer of the smooth and continuous of having grown, the halo effect on the back side significantly reduces or eliminates.In addition, wafer support makes to be contained in the silicon wafer during the epitaxial deposition process and is cleaned gas stream from chip back surface to the dopant atom of external diffusion and takes away and discharge from the front of wafer.Discharge has prevented that to the dopant atom of external diffusion a large amount of doping agents from causing undesirable front to be mixed automatically from oozing out between wafer and the susceptor edges and contacting the front.

To allow process gas, particularly clean air to contact any way configuration wafer support at the silicon wafer substrate back side with Purge gas.Size is made wafer support to hold the silicon wafer of any diameter in accordance with regulations, comprises 150mm for example, 200mm and 300mm and bigger wafer.Wafer support can be made of the material of routine, and high purity graphite for example, and have silicon carbide or the glassy carbon layer that covers graphite is discharged into amount of pollutant in the surrounding environment to reduce during the high temperature epitaxy depositing technics from graphite.The graphite that constitutes pedestal is usually at least about 99%, preferably at least about 99.9%, preferably at least about 99.99% pure graphite.In addition, graphite preferably contains the metal that is less than about 20ppm total amount, and for example iron, molybdenum, copper and mickel more preferably, contain the metal that is less than the 5ppm total amount, for example iron, molybdenum, copper and mickel.The silicon carbide or the vitreous carbon coating that cover graphite have between about 75 microns and about 150 microns usually, preferred about 100 microns to 125 microns thickness.With graphite-like seemingly, silicon carbide or vitreous carbon coating should have less than about 20ppm and preferably less than total metal concentration of about 5ppm.

Epitaxial deposition reactor of the present invention comprises that also optional device is to improve the wafer quality or to increase output.For example, edge ring can be positioned at the peripheral outer of silicon wafer and/or wafer support, the edge insulation by making wafer and/or before flowing into indoor process gas contact wafer surface pre-heating technique gas, to improve the temperature homogeneity on the wafer.In addition, reactor comprises the chamber separation scraper, has strengthened separating of siliceous source air-flow and purge gas flow, has increased the efficient of depositing technics thus.Similar with pedestal, edge ring and chamber separator are made of the graphite that is coated with silicon carbide or vitreous carbon usually.

E. The porous pedestal

1. Porous pedestal in wafer rests on the toroidal frame

In specific structure or embodiment, wafer support is the porous pedestal.With reference now to Fig. 2,, shows the sectional view of porous pedestal 12.Porous pedestal 12 has the interior toroidal frame 13 that can support silicon wafer substrate 4, and silicon wafer substrate 4 has the front 3 and the back side 5.Porous pedestal 12 has the porous area 14 that contains a plurality of holes or opening 15,16,17,18,19,20,21 and 22.The single wafer reactor of mechanical loading (for example, the Centura that makes by Applied Materials overleaf ^Reactor) the porous pedestal that uses in also needs wafer pinhole for pattern drawing 23,24 and 25 (not shown, referring to Fig. 3).By comparison, the single-chip Epsilon that makes at ASM ^The porous pedestal that uses in reactor or the artificial loading cartridge type reactor does not need pinhole for pattern drawing.Here term opening and hole can exchange use, all refer to the open access in the porous area 14.Porous area 14 with opening is located immediately at below the silicon wafer substrate 14.Term used herein " many " is meant two or more holes.Before applying coating in porous pedestal 12 drilling bore hole 15,16,17,18,19,20,21 and 22.During the prebake step of epitaxial deposition process, hole 15,16,17,18,19,20,21 and 22 make clean air contact the whole basically back side 5 of silicon wafer substrate 4, make the clean air reaction and remove nearly all natural oxide on silicon wafer substrate 4 back sides 5.Because gas can ooze out and cause removing fully basically the natural oxide layer on the back side, therefore also corroded the part back side 5 of the silicon wafer substrate 4 that contacts with the interior toroidal frame 13 of pedestal 12 basically by clean air between wafer and pedestal.Since during the epitaxial growth technology between wafer and the pedestal ooze out and contact any source gas at the back side 5 smooth and be grown in continuously on the silicon face, so remove natural oxide from the back side 5 and significantly reduced or eliminated any halo effect on the silicon wafer back side.Hole 15,16,17,18,19,20,21 and 22 also make during the epitaxial deposition step of high-temperature cleaning step and epitaxial deposition process from the back side 5 of silicon wafer substrate 4 and to pass each hole to the dopant atom of external diffusion and enter in Purge gas or the hydrogen stream and take away from the front 3 of silicon wafer substrate 4 and enter in the blowdown system.Thus, realized significantly having reduced positive automatic doping during the epitaxial deposition process.

With reference now to Fig. 3,, shows the vertical view of the porous pedestal 12 of the porous area 9 that has interior toroidal frame 13 and have a plurality of holes.The porous pedestal that uses in the reactor of loaded with wafers also need have pinhole for pattern drawing 23 on porous area 14 overleaf, 24 and 25, with during epitaxial deposition process and afterwards, allow picker (not shown) under the porous pedestal 12 to raise and reduce silicon wafer to porous pedestal 12 and lifting leave porous pedestal 12.Edge ring 27 around the periphery of porous pedestal 12 to guarantee that temperature is even on the silicon wafer.Edge ring 27 has the diameter of about 4cm to about 10cm usually, greater than the diameter of porous pedestal 12.

Thereby being located immediately at diameter that the hole in the porous area of porous pedestal under the silicon wafer preferably has makes the silicon carbide that appends to pedestal in pedestal after the drilling bore hole or vitreous carbon coating can not block or clog the hole limit fluid basically to flow through.It should be appreciated by those skilled in the art that the opening that is called through hole usually can be square, slit, diamond or other Any shape of allowing fluid to flow through.Opening preferably has the width between about 0.1 millimeter and about 3 millimeters, more preferably between about 0.1 millimeter and about 1 millimeter, most preferably between about 0.5 millimeter and about 1 millimeter.If opening is circular, the width of opening is defined as ultimate range or the diameter between two angles of opening.The hole is arranged on the porous pedestal, makes the clean air contact of using during the prebake step of epitaxial deposition process and the whole basically back side of corroding silicon wafer.Between about 0.5 millimeter and about 4 centimetres, between 2 millimeters and about 2 centimetres, most preferably from about the pitch of holes of porous pedestal makes clean air contact the whole back side of silicon wafer basically between 6 millimeters and about 1.5 centimetres, can corrode natural oxides all basically on the back side thus.Total per-cent of the port area on the base-plates surface be the pedestal total area about 0.5% and about 4% between, more preferably be the pedestal total area about 1% and about 3% between.The pedestal porous surface preferably has about 0.2 hole/cm ²With about 4 holes/cm ²Between density, more preferably at about 0.8 hole/cm ²With about 1.75 holes/cm ²Between density.Density used herein is meant even or uneven density.

Hole in the usually preferred porous pedestal has diameter less and that use, can not make silicon carbide or vitreous carbon coating limit fluid flow through the back side that the hole arrives silicon wafer.If the hole drill in the pedestal gets too big, produce the pattern problem of receiving because local temperature is inhomogeneous on the back side at front wafer surface so.By being positioned at the heating lamp direct irradiation back side below the silicon wafer, the large diameter hole in the porous pedestal causes producing on the silicon wafer back side focus or cold spot.These focuses or cold spot be the formation temperature gradient on the front of silicon wafer, causes uneven epitaxial silicon growth on the silicon wafer front.Uneven outer layer growth has significantly reduced the wafer quality.On the porous pedestal, the hole is pierced in the pedestal with the pitch angle, further reduced by the heating lamp direct irradiation back side and formed focus or cold spot causes the positive inhomogeneous epitaxially grown possibility that, still can make gas pass pedestal and contact the back side, dopant atom is left from the back side to external diffusion.To further reduce by passing hole direct irradiation wafer and on silicon wafer, form the possibility of heat or cold spot and generation thermograde and reduce or eliminate any heat or the cold spot that causes by pinhole for pattern drawing, can regulate and adjust the lamp power ratio of the upper and lower heating lamp of silicon wafer, so that the heating balance of lamp.

With reference now to Fig. 4,, shows the epitaxial reactor of using during the epitaxial growth technology of using porous pedestal 12 of the present invention 30.Porous pedestal 12 is installed on rotatable bracing or strutting arrangement 31 and 32, and by size make and configuration with toroidal frame 13 upper support silicon wafer substrate 4 in during epitaxial deposition process.Opening 15,16,17,18 in silicon wafer substrate 4 and the porous pedestal 12 in the porous area 14,19,20,21 and 22 is spaced apart.The porous area 14 that pinhole for pattern drawing 23 makes the picker (not shown) pass porous pedestal 12 arrives silicon wafer substrate 4, thus before the epitaxial deposition process and afterwards silicon wafer substrate 4 is placed on the porous pedestal 12 and porous pedestal 12 is left in lifting.Epitaxial deposition chamber 30 also comprises and is positioned at the upper and lower heating lamp array 33 and 34 of porous pedestal 12, is respectively applied for heating during the epitaxial deposition.During the prebake step of epitaxial deposition, inlet mouth 35 and 36 is introduced clean air, and it is upper and lower that clean air is introduced in silicon wafer substrate 4 thus, to help to remove the natural oxide on silicon wafer substrate 4 front and backs 5.During the epitaxial growth steps, inlet mouth 35 is introduced in the siliceous source of mobile gas on the wafer substrates 4, and inlet mouth 36 will be taken away from the front to the dopant atom of external diffusion at the back side 5 that silicon wafer substrate is introduced hydrogen or rare gas element contact silicon wafer substrate 4 for 4 times.As shown in Figure 4, be injected into the front and back split flow (split flow mode, yet not necessarily) of indoor gas of epitaxial deposition and silicon wafer.This flow pattern makes injecting gas contact front and passes the back side of pedestal contact wafer by the hole in the base-plates surface.Because air-flow is parallel to rather than flow perpendicular to silicon face, has has significantly reduced or eliminated by oozing out gas between Waffer edge and the toroidal frame and caused silicon wafer to leave the possibility of toroidal frame and distortion.Being incorporated into gas in the chamber 34 from inlet mouth 35 and 36 34 discharges by discharge outlet 37 from the chamber.

During cleaning, the hole in the porous pedestal makes clean air pass the porous pedestal and the whole back side that contacts silicon wafer basically, removes the natural oxide that exists on the back side by clean air thus.Remove any part on the silicon wafer back side that silicon epitaxial layers that natural oxide makes smooth and continuous is grown in during the outer layer growth with source gas contacts from the back side, eliminated to go up overleaf forming any haloing thus basically.In addition, hole in the porous pedestal makes the back side of rare gas element or hydrogen contact wafer, take away during cleaning and the epitaxial growth steps from the back side to the dopant atom of external diffusion and send in the discharge equipment from silicon wafer thus, reduced the automatic adulterated possibility of front wafer surface thus basically.

2. Wafer rests the porous pedestal on the porous area

In another embodiment of the present invention, the porous pedestal can have been save interior toroidal frame 13 shown in Figure 4 by size making and configuration so that silicon wafer is located immediately on the porous area.With reference now to Fig. 5,, shows the section that silicon wafer is located immediately at the porous pedestal on the porous area.The back side 5 of silicon wafer substrate 4 is located immediately on the porous area 41 of porous pedestal 40.Though the back side 5 of silicon wafer substrate 4 directly contacts porous area 41, can pass porous area 41 and contact the whole back side 5 of silicon wafer substrate 4 basically by hole 42,43,44,45,46,47,48 and 49 at the gas of porous pedestal 40 current downflow.

3. Wafer rests the porous pedestal on the spill porous area

In another embodiment of the present invention, porous pedestal of the present invention shown in Figure 5 can further be revised, and makes porous area be configured to dish type, only makes the outward flange contact porous pedestal of silicon wafer.With reference now to Fig. 6,, shows the section that silicon wafer is located immediately at the porous pedestal 50 on the pedestal porous area 51.The back side 5 of silicon wafer substrate 4 is located immediately on the porous area 51 of porous pedestal 50.Make porous area 51 be configured to dish type, make the outward flange 2 of silicon wafer substrate 4 directly contact porous area 51, the remainder at silicon wafer substrate 4 back sides 5 does not directly contact porous area 51.Between the usage period, hole 52,53,54,55,56,57 and 58 make fluid flow through the back side of wafer.

It should be appreciated by those skilled in the art that porous pedestal of the present invention can use with polytype deposit reaction chamber, comprises cartridge type, platypelloid type and small-sized batch reactor, and irrelevant with the shape of the pedestal that uses.

F. Band extends the pedestal of picker

With reference now to Fig. 7,, in an embodiment more of the present invention, wafer support is conventional pedestal 60, wherein is in the position of extending or making progress at (that is, during prebake and the epitaxy) during the whole epitaxial deposition process at least three picker 61-63.Silicon wafer lifted make the clean airs contact that is incorporated into during the prebake in the deposition chamber 30 on the pedestal 60 and remove natural oxidizing layer on wafer substrates 4 back sides 5, and prevent to form the haloing that chemical vapour deposition is introduced.Similarly, the Purge gas that is incorporated into during the growth of epitaxial silicon layer in the epitaxial deposition chamber 30 can be taken away the dopant atom that the back side 5 discharges from front 3, and prevents the automatic doping of silicon epitaxial layers.

G. Open wafer support

In another embodiment of the present invention, arrive the mode supporting wafers (that is open wafer support) of the direct irradiation of plus heater element with the whole basically back exposure of wafer.In the extension deposition chamber, use open wafer support preferably to depend on specific application.For example, open wafer support can make the deposition temperature that wafer reaches quickly to be needed, and has increased output thus.In addition, open wafer support is heated than more even on the porous pedestal wafer, obtains more uniform epitaxial film (that is, receive pattern reduce).

1. Pin supports

An embodiment of open wafer support comprises at least three pins that extend from rotatable support, is similar at Steag ^The device that uses in the SHS3000 rapid thermal annealing device, the chip back surface that pin contact wafer edge is inside, supporting wafers during epitaxial growth technology.With reference now to Fig. 8,, shows the epitaxial reactor of using during the epitaxial growth technology of utilizing pin of the present invention to support 30.Three pins 70,71 and 72 are installed to rotatable support 74, and by size make and configuration with support silicon wafer substrate 4 during epitaxial deposition process.Epitaxial deposition chamber 34 also contain lay respectively on the wafer substrates 4 and under during epitaxial deposition process, be used to the heating lamp array 33 and 34 that heats.During the prebake step of epitaxial deposition process, inlet mouth 35 and 36 is introduced clean airs, thus clean air be incorporated into the top of silicon wafer substrate 4 and below, to help removing natural oxide from the front 3 and the back side 5 of silicon wafer substrate 4.During the epitaxial growth steps, inlet mouth 35 is introduced in the siliceous source of mobile gas on the wafer substrates 4, and inlet mouth 36 introducing hydrogen or rare gas element contact with silicon wafer substrate 4 back sides 5 in wafer substrates 4 current downflow, and from positive 3 dopant atoms of taking away to external diffusion.Epitaxial deposition chamber 34 also comprises chamber separation scraper 75 and 76, has strengthened separating of deposited gas and purge gas flow.In addition, epitaxial deposition chamber 34 comprises the edge ring 77 that supports on 78 and 79, to increase the temperature homogeneity on the wafer surface.

2. Ring supports

With reference now to Fig. 9,, in another embodiment, wafer support and the Centura that makes by Applied Materials ^That uses in the rapid thermal processor is similar, is annular brace 80.With reference now to Figure 10,, annular brace 90 preferably includes the interior toroidal frame 91 and the outer ring step 92 of supporting wafers substrate 4, and the effect of outer ring step is the spitting image of edge ring, and the periphery and the preheating reactant gases of insulation wafer are prevented sliding stop.

H. The efficient of epitaxial deposition process of the present invention

Carry out several experiments to estimate the method and apparatus of the present invention of making single-crystal wafer of the present invention.For example, use conventional pedestal and porous pedestal, the thick epitaxial film of about 2.75 μ m is deposited on the wafer substrates of 200mm diameter boron-doping, substrate has the resistivity of about 0.005 Ω-cm to about 0.01 Ω-cm.With reference now to Figure 11,, on wafer surface, has the backside oxide sealed wafer as can be seen and have basically resistivity uniformly.Similarly, use the porous pedestal to be deposited on the epitaxial film that does not have on the backside oxide sealed wafer and on wafer surface, have basic resistivity uniformly.Yet, use standard pedestal is deposited on the epitaxial film that does not have on the backside oxide sealed wafer and has uneven resistivity on wafer surface---and " W " shape resistivity distribution that has functional relation with surface location depends primarily on the control of process variable, air temperature and current for example, to compensate near the automatic doping of periphery, so that resistivity is remained in the acceptable limit.Do not have this control, to even substantially apart from the about 10mm resistivity of periphery, in the end 10mm place resistivity significantly reduces existence doping automatically from the center.For example, reduce about 10 to about 20 percent from the resistivity of the inside 10mm epitaxial film of periphery, or about more than 50 percent, depend on the resistivity of substrate and the difference between the epitaxial film.

With reference now to Figure 12 A, Tencor, ^The fuzzy shape appearance figure of SPI clearly shows and uses conventional pedestal in the position that does not have the backside surface haloing that the deposit silicon epitaxial layers produces on the backside oxide sealed wafer.By comparison, Figure 12 B is illustrated in not to be had under the backside oxide sealing situation, uses porous pedestal of the present invention to eliminate haloing.

With reference now to Figure 13 A, ADE, ^CR-83 SQM receives shape appearance figure and is clearly shown that and uses conventional pedestal to produce to have on the direct pinhole for pattern drawing about 60nm to receive the epitaxial film of pattern.By comparison, Figure 13 B demonstrates and uses the porous pedestal basically the pattern of receiving of the epitaxial film on the pinhole for pattern drawing to be reduced to about 20nm.

Assessment has three embodiment of the porous pedestal of different hole dimensions, spacing and density, supports 200mm diameter silicon wafer during epitaxial deposition process.Each embodiment has the approximate equidistant hole of vertically getting into the bottom surface, forms the cylindrical hole figure, about 95 millimeters of radius.The following change of the quantity in hole and size: porous pedestal A comprises 274 holes, the about 1.32mm of diameter (about 0.95 hole/cm ²Hole density); Porous pedestal B comprises 548 holes, the about 1.32mm of diameter (about 1.95 holes/cm ²Hole density); Porous pedestal C comprises 274 holes, the about 1.02mm of diameter (about 0.95 hole/cm ²Hole density).Each embodiment has three pinhole for pattern drawings, the about 8mm of diameter, and apart from the about 90mm in pedestal center, and with 120 ° separately.

Use above porous pedestal to prepare the silicon wafer of a large amount of band silicon epitaxy layers.Each wafer does not have back side haloing and positive automatic doping.The result shows for the haloing between the density of different holes or mixes automatically, without any superior part.Yet, observed on the wafer that uses pedestal C to make and received pattern on the epitaxial silicon wafer surface and reduce with smaller diameter bore.Particularly, the wafer with the thick epitaxial film of about 3 μ m of using pedestal A and B growth demonstrates to exist on the surface on the hole that is located immediately at about 20nm receives pattern, uses the wafer of pedestal C preparation to demonstrate the pattern of receiving below about 10nm.

I. The silicon single crystal wafer of intrinsic gettering

As mentioned above, the wafer that uses Czochralski method to prepare has about 10 to about 18ppm oxygen concn usually.In addition, arrive from about 750 ℃ of rate of cooling, may form oxygen deposition thing nucleation centre to about 350 ℃ scope according to the fusing point (that is, about 1410 ℃) of silicon single crystal ingot from silicon.Normally used heat treatment cycle also makes oxygen deposit in silicon wafer in the electron device manufacturing, oxygen supersaturation in the silicon wafer.According to they positions in wafer, settling can be harmful to or be useful.The oxygen deposition thing (that is, usually near surface) that is arranged in the wafer active device region can damage the operation of device.Yet the oxygen deposition thing that is arranged in chip body can be caught undesirable metallic impurity of meeting contact wafer.The oxygen deposition thing that use is arranged in chip body is caught metal and is called inside or intrinsic gettering (" IG ").

Usually, the manufacturing process of electron device comprises the series of steps of design with preparation silicon, the balance that silicon has the sedimental wafer surface region of close non-oxidation (being called " denudation area " or " deposit-free district " usually) and contains the wafer (that is chip body) that q.s is used for the oxygen deposition thing of IG purpose.For example in height-low-high heated succession, form the denudation area, (a) (＞1100 ℃) outside diffusion heat treatments of oxygen at least 4 hours in rare gas element at high temperature for example, (b) form oxygen deposition thing nuclear down at low temperature (600 to 750 ℃), and (c) at high temperature (1000 to 1150 ℃) growth of oxygen (SiO ₂) settling.Referring to, F.Shimura for example, Semiconductor Silicon CrystalTechnology, 361-367 page or leaf (Academic Press, Inc., San Diego CA, 1989) (and reference paper of wherein quoting).

Yet, advanced recently electron device manufacturing process, for example the DRAM manufacturing process has begun to reduce as far as possible use high-temperature technology step.Though some technologies keep enough high-temperature technology steps to form denudation area and enough body sediment density, the too strict product that has hindered its commericially feasible of the tolerance on the material.Other present FA electron device manufacturing process does not contain the step to external diffusion.Since exist with active device region in the relevant problem of oxygen deposition thing, therefore, these electronic device fabricators must be used the silicon wafer that can not form the oxygen deposition thing Anywhere in wafer under their processing condition.Thus, lost the potential of IG.

Yet, the present invention allows to form the template (template) of lattice vacancy in wafer, when the thermal treatment wafer, form the ideal of oxygen deposition thing, inhomogeneous depth profile (referring to WO00/34999 in wafer, open on June 15th, 2000, here introduce as reference).Usually, the template part that determines whether to form lattice vacancy depends on the composition of wafer substrates.Specifically, boron has strengthened the oxygen deposition thing, thus, and heavy doping P type substrate (for example, P ⁺And P ⁺⁺Substrate) form enough oxygen deposition things, do not need to form template usually, however lightly doped P type substrate (for example, P ^-Substrate) need be formed for the template of IG purpose usually.

Figure 14 shows this oxygen deposition thing that forms by thermal treatment wafer prepared in accordance with the present invention and distributes.In this specific embodiment, the characteristics of wafer substrates 4 (having or do not have the epitaxial film that is deposited on positive 3) are not have the zone 93 and 93 ' (" denudation area ") of oxygen deposition thing 95.Degree of depth t and t ' are extended from the front 3 and the back side 5 respectively in these zones.Preferably, each of t and t ' about 10 to about 100 μ m more preferably from about 50 arrives about 100 μ m.Between anaerobic sedimental regional 93 and 93 ', exist and contain the uniform basically zone 94 of oxygen deposition substrate concentration.Use for great majority, the oxygen deposition substrate concentration in the zone 94 is at least about 5 * 10 ⁸Settling/cm ³, more preferably from about 1 * 10 ⁹Settling/cm ³The purpose that should be appreciated that Figure 14 is that the explanation of only passing through one embodiment of the present of invention helps those of skill in the art to be familiar with the present invention.The invention is not restricted to this embodiment.For example, the present invention can also be used to form only has a denudation area 93 (wafer that replaces two denudation areas 93 and 93 ').

Form the template of lattice vacancy, heated chip at first usually is then with the speed cooling at least about 10 ℃/sec.The purpose of heated chip is: (a) form eleutheromorph crack (self-interstitial) and double-void (that is, frenkel defect) in the equally distributed lattice in entire wafer, and (b) dissolve the unsettled oxygen deposition thing nuclear center that exists in the wafer.Usually, be heated to comparatively high temps and cause forming a large amount of frenkel defects.The purpose of cooling step is to produce uneven distribution of crystal lattice vacancies, wherein vacancy concentration the center of wafer or near maximum, in the direction of wafer surface, reduce.Be sure of to cause the uneven distribution of lattice vacancy, cause the vacancy concentration of near surface to reduce because near the part room of cooling period wafer surface is diffused into the surface and disappears thus.

Use for great majority, preferred wafer is heated to soaking (soak) temperature at least about 1175 ℃.More preferably, be heated to about 1200, more preferably be heated to about 1225 to about 1250 ℃ to about 1300 ℃ soaking temperature.When the temperature of wafer reached the soaking temperature that needs, preferred wafer remained on soaking temperature for some time.Preferred time quantum is usually from about 10 to about 15 seconds.In the present commercial available epitaxial deposition reactor of representativeness, preferred wafer remains on soaking temperature about 12 by about 15 seconds.On the other hand, in the present commercial available RTA stove of representativeness, preferred wafer is maintained at about the soaking temperature in 10 seconds.

Usually, heated chip is exposed to air atmosphere simultaneously.At one embodiment of the present of invention clock, atmosphere is for comprising H ₂O and H ₂Oxidizing atmosphere in.Yet more preferably, the oxygenant in the oxidizing atmosphere is an oxygen, and concentration is at least about 300ppm (that is O of 300 moles of per 1,000,000 mole of total amount gases, ₂).More preferably, oxygen concn is from about 300 to about 2000ppm, more preferably from about 300 to about 500ppm.The rest part of oxidizing atmosphere preferably is mainly not the gas with silicon face or oxidant reaction.More preferably, the rest part of gas is mainly by rare gas element or N ₂Form, more preferably rare gas element, most preferably Ar.Oxidizing atmosphere preferably is exposed to epitaxial surface at least between heating period.More preferably, oxidizing atmosphere is exposed to the whole substantially surface of wafer.

In another embodiment of the present invention, atmosphere does not have oxygenant basically.When in epitaxial reactor (following introduction), forming the template of lattice vacancy, the preferred atmosphere that does not have oxygenant basically, although produce particulate because security consideration (avoiding blast) and oxygenant enter when contacting with unreacted chlorosilane, have the trend that forms ambiguity surface on the wafer.Basically there is not the atmosphere of oxygenant to comprise reducing gas (for example, H ₂) and/or rare gas element (for example, as He, Ne, Ar, Kr and Xe etc. rare gas element).Preferably, atmosphere is basically by H ₂, Ar and their mixture form.

In oxidizing atmosphere, after the thermal treatment wafer, cool off wafer fast.This cooling step carries out in the identical atmosphere of heat-treating usually.In addition, preferably with in the atmosphere of wafer surface reaction do not carrying out.Preferably with speed cooling at least about 10 ℃/sec.More preferably, with at least about the speed of 15 ℃/sec cooling wafer, more preferably, and at least about 20 ℃/sec, 50 ℃/sec most preferably from about.Preferably when reducing in the temperature range that lattice vacancy spreads, use this quick rate of cooling when the temperature of wafer in silicon single crystal.In case wafer is cooled to the temperature outside the temperature range that the wafer room relatively moves, the deposition characteristics that rate of cooling can the remarkably influenced wafer is not very important thus so.Usually, lattice vacancy is relatively moving greater than about 1000 ℃ temperature.

In concrete preferred embodiment, at chip temperature when soaking temperature drops to about 150 ℃ of temperature less than soaking temperature, the average rate of cooling of wafer at least about 10 ℃/sec (more preferably at least about 15 ℃/sec, more preferably at least about 20 ℃/sec, most preferably from about 50 ℃/sec).In concrete preferred embodiment, at chip temperature when soaking temperature drops to about 250 ℃ of temperature less than soaking temperature, the average rate of cooling of wafer at least about 10 ℃/sec (more preferably at least about 15 ℃/sec, more preferably at least about 20 ℃/sec, most preferably from about 50 ℃/sec).

For example at the commercially available rapid thermal annealing of any amount of commerce (" RTA by superpower lamp bank heated chip ") heat in the stove and cooling fast.The RTA stove can the rapid heating silicon wafer.For example, manyly can wafer be heated to 1200 ℃ from room temperature in several seconds.The example that suitable commerce can obtain stove comprises AG Associates (Mountain View, model 610 stoves CA) and AppliedMaterials (Santa Clara, CENTURA CA) ^RTP.

In addition, suppose in reaction chamber, can obtain the rate of cooling of needs, can in the extension deposition reactor, heat so and cooling fast.The applicant determines can be at EPI CENTURA ^Carry out the heating and cooling step in the reactor.With reference to Figure 15 and Figure 19, this reactor comprises the pedestal 101 of supporting wafers.Pedestal 101 is fixedly secured on the arm 103 of base supports axle 105, and axle 105 is slidably mounted in the bore 106 of wafer lift axle 107.Install in the cylinder open of wafer lift axle in the following dome (not shown) of reactor and vertically move.But pneumatic mechanism (not shown) operation of vertical mobile foundation back shaft 105 and wafer lift axle 107 can move as required together or independently.The base supports axle 105 in the swivel pipe internal diameter 106 can also be operated by this mechanism, thus can rotating basis 101 and wafer.Pedestal comprises and is installed in the pedestal opening slidably rigid needle 109, with the banking pin 111 of lower end joint wafer lift shaft at them.The upper end of pin 109 can supporting wafers.Usually, only when sending into wafer in the reactor and transport wafer from reactor, pin 109 is used for supporting wafers.

For at EPI CENTURA ^The wafer of heat-treating is set in the reactor, and wafer is sent to reactor, and for example by supporting plate 113, supporting plate is made (referring to Figure 19) by the size between the rigid needle 109.Base supports axle 105 and wafer lift axle 107 are moved upwards up to the original position shown in Figure 16 from shifting one's position shown in Figure 15.Moving up of base supports axle 105 makes pin 109 (engaging with wafer lift axle 107) join the back side of wafer to and lift wafer from supporting plate 113.After this from reactor, remove supporting plate.With reference to Figure 17, base supports axle 105 further moves up, and wafer lift axle 107 remains unchanged simultaneously.This make pin 109 with respect to pedestal 101 to the upper surface contact wafer of lower slip up to pedestal 101.After this, pedestal 101 supporting wafers.Simultaneously, back shaft 105 continues to move up up to pedestal 101 and ring 115 coplines.At this moment, pedestal is in the technology position.Open superpower lamp bank (not shown) heated chip then, the wafer that is supported by pedestal 101 is in the technology position simultaneously.Preferably, heating, heated chip more equably thus in the time of rotating basis 101 and wafer.

Have now found that under the temperature that lattice vacancy relatively moves EPI CENTURA ^The conventional average rate of cooling of wafer in the reactor (that is, about 10 to 15 ℃/sec) far below the average rate of cooling that in the RTA stove, obtains (that is, about 70 to 100 ℃/sec).This part is that (referring to Figure 17) is awfully hot sometimes with wafer substrate contacted 101 owing to finish after the heating.Be to increase rate of cooling, preferred wafer moves to as far as possible the position away from pedestal 101.Immediately base supports axle 105 is reduced to shown in Figure 180 shifting one's position after finishing heating.In shifting one's position, wafer is only supported by pin 109, and all back sides of wafer do not contact (except that pin 109) with any solid thermal surface with all fronts thus.In addition, wafer is set as far as possible away from hot radical seat 101.By lifting wafer from pedestal 101, the rate of cooling of wafer nearly double (that is, average rate of cooling is increased to from the scope of about 25 to 30 ℃/sec from the scope of about 10 to 15 ℃/sec).

In another embodiment, in comprising the epitaxial deposition reaction chamber of introducing more than open back side wafer support for example that pin supports or ring supports, obtain the rate of cooling of needs.By using open back side wafer support, eliminated the insulation effect of pedestal, quickly the heating and cooling wafer.Particularly, compare with the speed refrigerative wafer of about 25 to 30 ℃/sec usually with supporting by picker on the pedestal, to support wafer on pin or the support ring usually with about 70 to about 100 ℃/sec speed cooling.Preferred open back side wafer support is because the thermal treatment of generation denudation area joins in the epitaxial deposition process, lifts wafer without any extra physics contact with hour hands, can not make damage to wafers.

Uneven room prepared in accordance with the present invention is used for the template of oxygen deposition thing when being distributed in the postheating wafer.Particularly, when heated chip substrate 4 (referring to Figure 14), oxygen forms settling 95 in groups apace in containing by the zone 94 than the wafer substrates 4 of high vacancy concentration, but near the zone 93 and 93 ' the wafer surface 3 and 5 that contains low room less than not in groups.Usually, oxygen is about 500 to about 800 ℃ temperature nucleation, from about 700 to about 1000 ℃ temperature growth deposition.Thus, for example, suppose that this heat treatment cycle carries out near 800 ℃ the temperature of being everlasting, during the heat treatment cycle of electron device manufacturing process, form the uneven distribution of oxygen deposition thing 95 in the wafer.

At wafer and/or device fabrication device, can carry out forming in the wafer template of lattice vacancy and oxygen deposition thing subsequently at any point, suppose that back one treatment step do not eliminate that oxygen deposition thing nucleation centre/the oxygen deposition thing (for example, enter in the short cycle in the silicon being enough to dissolve nucleation centre/oxygen deposition thing, carry out subsequently heated chip) to enough temperature.In a preferred embodiment of the invention, after the deposit epitaxial film, form lattice vacancy template and nucleation centre oxygen deposition thing.For example, as mentioned above, form the template of lattice vacancy after the epitaxial deposition during the wafer fabrication process, during the heat treatment cycle of electron device manufacturing process, form nucleation/settling.In another embodiment, before the deposit epitaxial film, form lattice vacancy template and nucleation centre/oxygen deposition thing.Keep for some time by wafer being heated to temperature, be enough to withstand any with abundant growth nucleation centre/settling, form nucleation centre/settling (that is, nucleation centre/sedimental radius is greater than " critical radius ") with postheat treatment.

In view of more than, realized several purpose of the present invention as can be seen.Can be within the scope of the invention the porous pedestal of above introduction be carried out various modifications, more than all the elements that comprise in the explanation are intended to illustrated example rather than qualification.

Claims (87)

1. silicon single crystal wafer, this silicon single crystal wafer comprises:

The silicon wafer substrate of the radius that have central shaft, usually extends to the wafer circumferential edge perpendicular to the front and back of central shaft, circumferential edge and from central shaft, the described back side does not have the oxide compound of sealing, and the haloing that does not have chemical vapor deposition process to introduce basically, this silicon wafer substrate comprises P type or N type dopant atom; And

Silicon epitaxial layers on the silicon wafer substrate front is characterised in that the axial symmetry district that extends radially outwardly from central shaft towards circumferential edge, wherein resistivity is even basically, axially the radius in symmetry district is at least about 80% substrate radius length, and silicon epitaxial layers comprises P type or N type dopant atom.

2. at the silicon single crystal wafer described in the claim 1, wherein front and back has specular gloss.

3. at the silicon single crystal wafer described in the claim 1, the variation of the resistivity in wherein axial symmetry district is less than about 10%.

4. at the silicon single crystal wafer described in the claim 1, the variation of the resistivity in wherein axial symmetry district is less than about 5%.

5. at the silicon single crystal wafer described in the claim 1, the variation of the resistivity in wherein axial symmetry district is less than about 2%.

6. at the silicon single crystal wafer described in the claim 1, wherein axially the radius in symmetry district is at least about 85% of silicon wafer substrate radius length.

7. at the silicon single crystal wafer described in the claim 1, wherein axially the radius in symmetry district is at least about 90% of silicon wafer substrate radius length.

8. at the silicon single crystal wafer described in the claim 1, wherein axially the radius in symmetry district is at least about 95% of silicon wafer substrate radius length.

9. at the silicon single crystal wafer described in the claim 1, wherein axially the radius in symmetry district is at least about 100% of silicon wafer substrate radius length.

10. at the silicon single crystal wafer described in the claim 1, wherein the radius of silicon wafer substrate is at least about 50mm.

11. at the silicon single crystal wafer described in the claim 1, wherein the radius of silicon wafer substrate is at least about 75mm.

12. at the silicon single crystal wafer described in the claim 1, wherein the radius of silicon wafer substrate is at least about 100mm.

13. at the silicon single crystal wafer described in the claim 1, wherein the radius of silicon wafer substrate is at least about 150mm.

14. at the silicon single crystal wafer described in the claim 1, wherein the about 0.1 μ m of silicon epitaxial layers is thick to about 200 μ m.

15. at the silicon single crystal wafer described in the claim 1, wherein the about 1 μ m of silicon epitaxial layers is thick to about 100 μ m.

16. at the silicon single crystal wafer described in the claim 1, wherein the about 2 μ m of silicon epitaxial layers are thick to about 30 μ m.

17. at the silicon single crystal wafer described in the claim 1, wherein the about 3 μ m of silicon epitaxial layers are thick.

18. at the silicon single crystal wafer described in the claim 14, wherein silicon epitaxial layers is characterised in that 0.5mm * 0.5mm's receives the thickness of pattern less than about 1% silicon epitaxial layers.

19. at the silicon single crystal wafer described in the claim 14, wherein silicon epitaxial layers is characterised in that 0.5mm * 0.5mm's receives the thickness of pattern less than about 0.7% silicon epitaxial layers.

20. at the silicon single crystal wafer described in the claim 14, wherein silicon epitaxial layers is characterised in that 0.5mm * 0.5mm's receives the thickness of pattern less than about 0.3% silicon epitaxial layers.

21. at the silicon single crystal wafer described in the claim 14, wherein silicon epitaxial layers is characterised in that 2mm * 2mm's receives the thickness of pattern less than about 1% silicon epitaxial layers.

22. at the silicon single crystal wafer described in the claim 14, wherein silicon epitaxial layers is characterised in that 2mm * 2mm's receives the thickness of pattern less than about 0.7% silicon epitaxial layers.

23. at the silicon single crystal wafer described in the claim 14, wherein silicon epitaxial layers is characterised in that 2mm * 2mm's receives the thickness of pattern less than about 0.3% silicon epitaxial layers.

24. at the silicon single crystal wafer described in the claim 14, wherein silicon epitaxial layers is characterised in that 10mm * 10mm's receives the thickness of pattern less than about 3% silicon epitaxial layers.

25. at the silicon single crystal wafer described in the claim 17, wherein silicon epitaxial layers is characterised in that 2mm * 2mm's receives pattern less than about 60nm.

26. at the silicon single crystal wafer described in the claim 17, wherein silicon epitaxial layers is characterised in that 2mm * 2mm's receives pattern less than about 40nm.

27. at the silicon single crystal wafer described in the claim 17, wherein silicon epitaxial layers is characterised in that 2mm * 2mm's receives pattern less than about 20nm.

28. at the silicon single crystal wafer described in the claim 17, wherein silicon epitaxial layers is characterised in that 2mm * 2mm's receives pattern less than about 10nm.

29. at the silicon single crystal wafer described in the claim 1, wherein silicon wafer substrate and silicon epitaxy layer have the resistivity from about 100 Ω-cm to about 0.005 Ω-cm.

30. at the silicon single crystal wafer described in the claim 1, wherein silicon wafer substrate has the resistivity from about 0.01 Ω-cm to about 0.03 Ω-cm, silicon epitaxial layers has the resistivity from about 1 Ω-cm to about 20 Ω-cm.

31. at the silicon single crystal wafer described in the claim 1, wherein silicon wafer substrate has the resistivity from about 0.005 Ω-cm to about 0.01 Ω-cm, silicon epitaxial layers has the resistivity from about 1 Ω-cm to about 20 Ω-cm.

32. at the silicon single crystal wafer described in the claim 1, wherein silicon wafer substrate also comprises between front and rear surfaces and is parallel to their central plane; Comprise from the extended distance D of front surface layer to central plane ₁At least be approximately the front surface layer of the wafer region of 10 μ m; And comprise that wafer substrates is characterised in that from the body layer of central plane to the wafer region of front surface layer extension:

Wafer substrates has the lattice vacancy of uneven distribution, wherein the lattice vacancy concentration of (a) body layer is greater than in the front surface layer, (b) lattice vacancy central plane or near have the concentration distribution of the peak density of lattice vacancy, and (c) concentration of lattice vacancy descends to the front surface of wafer gradually from the position of peak density usually.

33. the silicon single crystal wafer of claim 32, wherein D ₁From about 50 to about 100 μ m.

34. at the silicon single crystal wafer described in the claim 1, wherein silicon wafer substrate also comprises between front and rear surfaces and is parallel to their central plane; Comprise from the extended distance D of front surface layer to central plane ₁At least be approximately the front surface layer of the wafer region of 10 μ m; And comprise that wafer substrates is characterised in that from the body layer of central plane to the wafer region of front surface layer extension:

Wafer substrates has the oxygen deposition thing of uneven distribution, wherein the oxygen deposition substrate concentration of (a) body layer is greater than in the front surface layer, (b) the oxygen deposition thing central plane or near have the concentration distribution of the peak density of oxygen deposition thing, and (c) concentration of oxygen deposition thing descends to the front surface of wafer gradually from the position of peak density usually.

35. the silicon single crystal wafer of claim 34, wherein D ₁From about 50 to about 100 μ m.

36. a technology that is used for growth of epitaxial silicon layer on the silicon wafer substrate of chemical vapor deposition chamber, silicon wafer substrate has front and back, and this technology comprises:

With the front of clean air contact silicon wafer substrate and the whole basically back side of silicon wafer substrate, remove zone of oxidation from the front and back of silicon wafer substrate;

Remove after the zone of oxidation growth of epitaxial silicon layer on the front of silicon wafer substrate; And

During the growth of epitaxial silicon layer, it is indoor that Purge gas is incorporated into chemical vapour deposition, to reduce the quantity that is incorporated into the dopant atom the silicon epitaxial layers from the back side of silicon wafer substrate to external diffusion.

37. in the technology described in the claim 36, wherein clean air is hydrogen or hydrogen/hydrochloric acid mixture.

38. in the technology described in the claim 36, wherein Purge gas is selected from nitrogen, argon gas, hydrogen, SiCl ₄, SiHCl ₃, SiH ₂Cl ₂, SiH ₃Cl, SiH ₄And composition thereof.

39. in the technology described in the claim 36, wherein the about 0.1 μ m of silicon epitaxial layers is thick to about 200 μ m.

40. in the technology described in the claim 36, wherein the about 1 μ m of silicon epitaxial layers is thick to about 100 μ m.

41. in the technology described in the claim 36, wherein the about 2 μ m of silicon epitaxial layers are thick to about 30 μ m.

42. in the technology described in the claim 36, wherein the about 3 μ m of silicon epitaxial layers are thick.

43. in the technology described in the claim 42, wherein silicon epitaxial layers is characterised in that 2mm * 2mm's receives pattern less than about 60nm.

44. in the technology described in the claim 42, wherein silicon epitaxial layers is characterised in that 2mm * 2mm's receives pattern less than about 40nm.

45. in the technology described in the claim 42, wherein silicon epitaxial layers is characterised in that 2mm * 2mm's receives pattern less than about 20nm.

46. in the technology described in the claim 42, wherein silicon epitaxial layers is characterised in that 2mm * 2mm's receives pattern less than about 10nm.

47. the technology described in the claim 36 also comprises:

The silicon single crystal wafer that will comprise silicon wafer substrate and silicon epitaxial layers is heated to about at least 1175 ℃ soaking temperature; And

Cool off the epitaxial wafer of heating with the speed of about at least 10 ℃/sec.

48. the technology of claim 47, wherein when heating, silicon single crystal wafer is exposed to and contains O ₂Oxidizing atmosphere, contain H ₂Reducing atmosphere or contain in the inert atmosphere of Ar.

49. the technology of claim 47, wherein speed of cooling is at least about 15 ℃/sec.

50. the technology of claim 47, wherein when being cooled to be lower than about 150 ℃ of soaking temperature from soaking temperature, the speed of cooling of wafer is at least about 15 ℃/sec.

51. the technology of claim 47, wherein speed of cooling is at least about 20 ℃/sec.

52. the technology of claim 47, wherein when being cooled to be lower than about 150 ℃ of soaking temperature from soaking temperature, the speed of cooling of wafer is at least about 20 ℃/sec.

53. the technology of claim 47, wherein speed of cooling is at least about 50 ℃/sec.

54. the technology of claim 47, wherein when being cooled to be lower than about 150 ℃ of soaking temperature from soaking temperature, the speed of cooling of wafer is at least about 50 ℃/sec.

55. an equipment that is used in the chemical vapor deposition process, growth of epitaxial silicon layer on silicon wafer substrate wherein, this equipment comprises:

By size make and configuration to support the pedestal of silicon wafer on it, pedestal has opening density and is about 0.2 opening/cm ²With about 4 openings/cm ²Between the surface, this surface usually relatively is arranged side by side with silicon wafer, so that fluid passes and surperficially contacts with the backside fluid of silicon wafer.

56. at the equipment described in the claim 55, wherein by the silicon wafer of base support with have the spaced of opening.

57. at the equipment described in the claim 55, wherein silicon wafer is supported by the inner annular frame of pedestal.

58. at the equipment described in the claim 55, wherein on the surface with a plurality of openings of pedestal, pinhole for pattern drawing is arranged, passes pedestal to allow picker.

59. at the equipment described in the claim 55, the diameter of its split shed arrives between about 3mm at about 0.1mm.

60. at the equipment described in the claim 55, the diameter of its split shed arrives between about 1mm at about 0.1mm.

61. at the equipment described in the claim 55, the diameter of its split shed arrives between about 1mm at about 0.5mm.

62. at the equipment described in the claim 55, the interval of its split shed is arrived between about 20mm at about 2mm.

63. at the equipment described in the claim 55, the interval of its split shed is arrived between about 15mm at about 6mm.

64. at the equipment described in the claim 55, wherein Biao Mian opening density is at about 0.8 opening/cm ²To about 1.75 openings/cm ²Between.

65. at the equipment described in the claim 55, wherein the per-cent of total port area from the teeth outwards is between about 0.5% to about 4%.

66. at the equipment described in the claim 55, wherein the per-cent of total port area from the teeth outwards is between about 1% to about 3%.

67. at the equipment described in the claim 55, wherein silicon wafer directly is placed on the surface with opening.

68. an equipment that in epitaxial deposition process, uses, growth of epitaxial silicon layer on silicon wafer substrate wherein, silicon wafer substrate has front and back, and this equipment comprises

The chamber;

Support silicon wafer substrate and make the front of fluid contact silicon wafer substrate and the wafer support at the whole back side basically of silicon wafer substrate;

The rotatable device of supporting wafers bracing or strutting arrangement and silicon wafer substrate;

Heating unit;

Make the inlet mouth of clean air, source gas and Purge gas access arrangement; And

Make the venting port of clean air, source gas and Purge gas device for transferring.

69., also comprise the chamber separation scraper at the equipment described in the claim 68.

70. at the equipment described in the claim 68, wherein wafer support is to have opening density to be about 0.5 opening/cm ²With about 2 openings/cm ²Between the pedestal on surface, the surface relatively is arranged side by side with silicon wafer usually, opening allows fluid to pass surperficially to contact with the whole basically backside fluid of silicon wafer.

71. at the equipment described in the claim 70, wherein by the silicon wafer of base support with have the spaced of opening.

72. at the equipment described in the claim 70, wherein silicon wafer is supported by the inner annular frame of pedestal.

73., also comprise side ring around the pedestal periphery at the equipment described in the claim 70.

74. at the equipment described in the claim 70, the diameter of its split shed arrives between about 3mm at about 0.1mm.

75. at the equipment described in the claim 70, the diameter of its split shed arrives between about 1mm at about 0.1mm.

76. at the equipment described in the claim 70, the diameter of its split shed arrives between about 1mm at about 0.5mm.

77. at the equipment described in the claim 70, the interval of its split shed is arrived between about 20mm at about 2mm.

78. at the equipment described in the claim 70, the interval of its split shed is arrived between about 15mm at about 6mm.

79. at the equipment described in the claim 70, wherein Biao Mian opening density is at about 0.8 opening/cm ²To about 1.75 openings/cm ²Between.

80. at the equipment described in the claim 70, wherein the per-cent of total port area from the teeth outwards is between about 0.5% to about 4%.

81. at the equipment described in the claim 70, wherein the per-cent of total port area from the teeth outwards is between about 1% to about 3%.

82. at the equipment described in the claim 68, wherein wafer support is the pedestal with at least three pins that stretch out from pedestal, silicon wafer is supported on the pin.

83., also comprise side ring around the pedestal periphery at the equipment described in the claim 82.

84. at the equipment described in the claim 68, wherein wafer support comprises at least three pins.

85., also comprise side ring around the pedestal periphery at the equipment described in the claim 84.

86. at the equipment described in the claim 68, wherein wafer support supports for ring.

87. at the equipment described in the claim 86, wherein ring supports the interior ring support of silicon wafer and the external annular section that the control crystal slides during supporting and being included in epitaxial deposition.

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