CN108342713A - 常压等离子镀膜装置 - Google Patents
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Abstract
一种常压等离子镀膜装置。此常压等离子镀膜装置包含常压等离子产生器以及至少一前驱物进料治具。常压等离子产生器包含管状电极以及喷嘴。喷嘴设于管状电极下,且配置以喷射等离子。喷嘴具有喷口以及平滑轮廓,且此平滑轮廓的外径由管状电极往喷口渐缩。至少一前驱物进料治具邻设于管状电极与喷嘴,且配置以朝喷嘴的平滑轮廓喷射镀膜前驱物,以使镀膜前驱物沿着平滑轮廓流至喷口前与常压等离子混合喷涂成膜。利用喷嘴的平滑轮廓设计,搭配等离子气流在喷口附近所产生的吸力,可有效提升镀膜前驱物与等离子的混合均匀度,提升镀膜品质,更可改善镀膜前驱物散逸于大气而造成浪费的问题。
Description
技术领域
本发明是有关于一种等离子装置,且特别是有关于一种常压等离子镀膜装置。
背景技术
常压等离子火炬装置通常由具有高电位差的管状电极所组成,将工作气体电离后产生等离子,管状电极下方连接喷嘴将等离子火炬稳定喷出。而常压等离子镀膜装置是在一大气压下,于其二电极之间施加高压电场,先将工作气体游离化来产生等离子,并将镀膜前驱物与等离子混合后沉积于基板上成膜。常压等离子镀膜技术可取代极为昂贵且维护手续繁杂的真空等离子镀膜技术。此外,常压等离子镀膜技术的量产流程具有连续性,因此可降低真空等离子镀膜批次制造的人力成本。
然而,目前常压等离子镀膜技术最大的瓶颈在于大气环境下各种气体粒子碰撞剧烈,如何精准控制镀膜前驱物与等离子的混合将是关键技术。一种已知技术是直接将镀膜前驱物直接喷向等离子火炬。然而,这样的方式不仅容易造成镀膜前驱物逸散于大气中,而造成镀膜前驱物浪费,也会有镀膜前驱物与等离子混合时间过短,而造成镀膜前驱物与等离子混合不均的问题,进而导致薄膜品质不佳。
另一种已知技术是在常压等离子镀膜装置的邻近于喷嘴处或喷嘴中设置封闭渠道,再透过封闭渠道将镀膜前驱物注入等离子腔体内使其与等离子混合。但是,这样的方式,由于等离子是高反应性电离气体,前驱物于封闭渠道由于滞留时间过长容易反应过度,造成前驱物容易沉积于封闭渠道内或等离子腔体内部,而造成污染或堵塞。此外,这些污染物不仅难以清理,且对于沉积薄膜的品质有负面影响。而且,前驱物气流注入等离子腔体时也会等离子气流造成干扰,进而导致喷涂不均的现象。
发明内容
因此,本发明的一目的就是在提供一种常压等离子镀膜装置,其喷嘴具有平滑轮廓,如此通过镀膜前驱物流体本身的黏性、以及从喷嘴喷出的高速流动等离子气流在喷口附近形成的低压区域所产生的吸力,镀膜前驱物可顺利沿着喷嘴的平滑轮廓流动至喷嘴的喷口而与喷出的等离子瞬间均匀混合。故,不仅可有效提升镀膜前驱物与等离子的混合均匀度,减少前驱物与等离子反应过度沉积于封闭渠道,更可大幅改善镀膜前驱物散逸于大气而造成浪费的问题。
本发明的另一目的是在提供一种常压等离子镀膜装置,其不具封闭渠道来引导镀膜前驱物与等离子混合,因此可解决已知技术利用封闭渠道将镀膜前驱物注入等离子腔体造成沉积污染进而影响成膜品质的问题,而可提高喷涂均匀性,进而可提升镀膜品质。
根据本发明的上述目的,提出一种常压等离子镀膜装置。此常压等离子镀膜装置包含常压等离子产生器以及至少一前驱物进料治具。常压等离子产生器包含管状电极以及喷嘴。喷嘴设于管状电极下,且配置以喷射等离子。喷嘴具有喷口以及平滑轮廓,且此平滑轮廓的外径由管状电极往喷口渐缩。至少一前驱物进料治具邻设于管状电极与喷嘴,且配置以朝喷嘴的平滑轮廓喷射镀膜前驱物,以使镀膜前驱物沿着平滑轮廓流至喷口前。
依据本发明的一实施例,上述的常压等离子产生器还包含棒状电极设于管状电极内。
依据本发明的一实施例,上述的平滑轮廓为流线形轮廓。
依据本发明的一实施例,上述的至少一前驱物进料治具包含多个前驱物进料治具,这些前驱物进料治具围设于喷嘴及/或管状电极外。
依据本发明的一实施例,上述的前驱物进料治具之间具有相同间距。
依据本发明的一实施例,上述的至少一前驱物进料治具是环状前驱物进料治具,此环状前驱物进料治具环设于喷嘴及/或管状电极外。
依据本发明的一实施例,上述的环状前驱物进料治具具有环状流道。
依据本发明的一实施例,上述的环状流道具有环状开口,且此环状开口与喷嘴及/或管状电极相对。
依据本发明的一实施例,上述的环状流道具有多个开口,这些开口与喷嘴及/或管状电极相对。
依据本发明的一实施例,上述的开口之间具有相同间距。
附图说明
为让本发明的上述和其他目的、特征、优点与实施例能更明显易懂,所附附图的说明如下:
图1是绘示依照本发明的一实施方式的一种常压等离子镀膜装置的装置示意图;以及
图2是绘示依照本发明的一实施方式的一种常压等离子镀膜装置的装置示意图。
具体实施方式
请参照图1,其是绘示依照本发明的一实施方式的一种常压等离子镀膜装置的装置示意图。在本实施方式中,常压等离子镀膜装置100主要可包含常压等离子产生器110以及至少一前驱物进料治具120。在一些实施例中,常压等离子产生器110主要可包含管状电极112以及喷嘴114。管状电极112具有腔室112a。在一些示范例子中,常压等离子产生器110还包含棒状电极116,其中棒状电极116设于管状电极112的腔室112a中。电源130的二极分别电性连接管状电极112与棒状电极116,以使管状电极112与棒状电极116之间具有电位差。在另一些示范例子中,常压等离子产生器100还包含另一管状电极,此另一管状电极设于管状电极112的上方,且此另一管状电极的腔室与管状电极112的腔室112a连通,其中电源130的二极分别电性连接管状电极112与此另一管状电极。工作气体140可导入管状电极112的腔室112a中。工作气体140可为用以产生等离子150的气体。
如图1所示,喷嘴114设于管状电极112下。喷嘴114是配置以喷射在管状电极112的腔室112a内所产生的等离子150。喷嘴114具有喷口114a,等离子150气流可从喷嘴114的喷口114a喷出。等离子150气流从喷嘴114的喷口114a喷出时,可在喷口114a附近形成低压区域。喷嘴114具有平滑轮廓114b。此平滑轮廓114b的外径由喷嘴114与管状电极112接合处往喷口114a的方向渐缩,即平滑轮廓114b与喷嘴114的轴心线之间的距离自喷嘴114与管状电极112接合处至喷口114a的方向渐减。在一些实施例中,喷嘴114的平滑轮廓114b为流线形轮廓。
前驱物进料治具120邻设于管状电极112与喷嘴114。举例而言,如图1所示,前驱物进料治具120设于广状电极112外侧,且位于喷嘴114外侧上方。前驱物进料治具120配置以朝喷嘴114的平滑轮廓114b喷射镀膜前驱物122,藉以使镀膜前驱物122沿着喷嘴114的平滑轮廓114b流至喷口114a前来与等离子150混合。在一些示范例子中,前驱物进料治具120可朝喷嘴114与管状电极112接合处附近喷射镀膜前驱物122。镀膜前驱物122可为液体、气体、雾气或粉末状固体。前驱物进料治具120与前驱物来源管线连接。
在本实施方式中,前驱物进料治具120可为管状治具,且前驱物进料治具120的数量可为一个或数个。当常压等离子镀膜装置100包含数个前驱物进料治具120时,这些前驱物进料治具120可围设于管状电极112及/或喷嘴114外。在一些示范例子中,这些前驱物进料治具120之间可具有相同间距。当然,这些前驱物进料治具120之间亦可具有不同的间距。
喷嘴114喷出的高速流动的等离子150气流时,会在喷口114a附近形成的低压区域,此低压区域可对镀膜前驱物122产生吸引力。因此,当前驱物进料治具120朝喷嘴114的平滑轮廓114b喷射镀膜前驱物122时,因镀膜前驱物122的黏性、以及喷口114a附近的低压区域对镀膜前驱物122的吸引,再加上喷嘴114具平滑轮廓114b,因此镀膜前驱物122可自管状电极112外壁沿着喷嘴114的平滑轮廓114b流动至喷口114a前,而与喷口114a喷出的等离子150瞬间混合。故,常压等离子镀膜装置100的应用不仅可有效改善镀膜前驱物122散逸于大气中而造成浪费与污染的问题,更可在极短时间内提高镀膜前驱物122与等离子150混合的均匀度同时避开前驱物122与等离子150过度反应的问题,进而可提升镀膜的品质。
请参照图2,其是绘示依照本发明的一实施方式的一种常压等离子镀膜装置的装置示意图。本实施方式的常压等离子镀膜装置100a的架构大致上与上述实施方式的常压等离子镀膜装置100的架构相同,二者之间的差异在于,常压等离子镀膜装置100a包含单一个前驱物进料治具160,且此前驱物进料治具160是环状前驱物进料治具。在常压等离子镀膜装置100a中,常压等离子产生器110穿设于环状的前驱物进料治具160中,且前驱物进料治具160可环设于喷嘴114及/或管状电极112外。举例而言,前驱物进料治具160环设于管状电极112的外壁外。前驱物进料治具160与前驱物来源管线连接。
在一些实施例中,环状的前驱物进料治具160具有环状流道162,且此环状流道162具有一个环状的开口164,其中此开口164与喷嘴114及/或管状电极112相对,以利朝喷嘴114及/或管状电极112喷射镀膜前驱物122。举例而言,如图2所示,前驱物进料治具160的环状的开口164与管状电极112的外壁相对。在另一些实施例中,前驱物进料治具160具有环状流道162,且此环状流道162具有数个开口164,这些开口164与喷嘴114及/或管状电极112相对。这些开口164环设于喷嘴114及/或管状电极112外,且这些开口164之间可具有相同间距、或不同间距。
由上述的实施方式可知,本发明的一优点就是因为本发明的常压等离子镀膜装置的喷嘴具有平滑轮廓,如此通过镀膜前驱物流体本身的黏性、以及从喷嘴喷出的高速流动等离子气流在喷口附近形成的低压区域所产生的吸引力,镀膜前驱物可顺利沿着喷嘴的平滑轮廓流动至喷嘴的喷口而与喷出的等离子均匀混合。因此,不仅可瞬间有效提升镀膜前驱物与等离子的混合均匀度,避免前驱物与等离子反应过度,更可大幅改善镀膜前驱物散逸于大气而造成浪费的问题。
由上述的实施方式可知,本发明的另一优点就是因为本发明的常压等离子镀膜装置不具封闭渠道来引导镀膜前驱物与等离子混合,因此可解决已知技术利用封闭渠道将镀膜前驱物注入等离子腔体造成沉积污染进而影响成膜品质的问题,而可提高喷涂均匀性,进而可提升镀膜品质。
虽然本发明已以实施例揭露如上,然其并非用以限定本发明,任何在此技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可作各种的更动与润饰,因此本发明的保护范围当视所附的权利要求书所界定的范围为准。
Claims (10)
1.一种常压等离子镀膜装置,其特征在于,包含:
一常压等离子产生器,包含:一管状电极;以及一喷嘴,设于该管状电极下,且配置以喷射一等离子,其中该喷嘴具有一喷口以及一平滑轮廓,且该平滑轮廓的一外径由该管状电极往该喷口渐缩;以及
至少一前驱物进料治具,邻设于该管状电极与该喷嘴,且配置以朝该喷嘴的该平滑轮廓喷射一镀膜前驱物,以使该镀膜前驱物沿着该平滑轮廓流至该喷口前。
2.根据权利要求1所述的常压等离子镀膜装置,其特征在于,该常压等离子产生器还包含一棒状电极设于该管状电极内。
3.根据权利要求1所述的常压等离子镀膜装置,其特征在于,该平滑轮廓为一流线形轮廓。
4.根据权利要求1所述的常压等离子镀膜装置,其特征在于,该至少一前驱物进料治具包含多个前驱物进料治具,所述多个前驱物进料治具围设于该喷嘴及/或该管状电极外。
5.根据权利要求1所述的常压等离子镀膜装置,其特征在于,所述多个前驱物进料治具之间具有相同间距。
6.根据权利要求1所述的常压等离子镀膜装置,其特征在于,该至少一前驱物进料治具是一环状前驱物进料治具,该环状前驱物进料治具环设于该喷嘴及/或该管状电极外。
7.根据权利要求6所述的常压等离子镀膜装置,其特征在于,该环状前驱物进料治具具有一环状流道。
8.根据权利要求7所述的常压等离子镀膜装置,其特征在于,该环状流道具有一环状开口,且该环状开口与该喷嘴及/或该管状电极相对。
9.根据权利要求7所述的常压等离子镀膜装置,其特征在于,该环状流道具有多个开口,所述多个开口与该喷嘴及/或该管状电极相对。
10.根据权利要求9所述的常压等离子镀膜装置,其特征在于,所述多个开口之间具有相同间距。
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CN110846640A (zh) * | 2018-08-21 | 2020-02-28 | 馗鼎奈米科技股份有限公司 | 电浆镀膜装置 |
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TWI686106B (zh) * | 2019-01-25 | 2020-02-21 | 國立清華大學 | 場發射手持式常壓電漿產生裝置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0385564A (ja) * | 1989-08-30 | 1991-04-10 | Canon Inc | 画像形成装置 |
JP2000096247A (ja) * | 1998-09-22 | 2000-04-04 | Komatsu Ltd | 表面処理装置 |
JP2001064778A (ja) * | 1999-08-26 | 2001-03-13 | Sharp Corp | プラズマ処理装置およびプラズマ処理方法 |
CN2735710Y (zh) * | 2004-09-11 | 2005-10-19 | 石家庄钢铁股份有限公司 | 一种等离子体驱动装置 |
CN101163370A (zh) * | 2006-10-10 | 2008-04-16 | 馗鼎奈米科技股份有限公司 | 等离子导引机构及应用该导引机构的等离子放电装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0208261D0 (en) * | 2002-04-10 | 2002-05-22 | Dow Corning | An atmospheric pressure plasma assembly |
GB0717430D0 (en) * | 2007-09-10 | 2007-10-24 | Dow Corning Ireland Ltd | Atmospheric pressure plasma |
US20090142511A1 (en) * | 2007-11-29 | 2009-06-04 | Haley Jr Robert P | Process and apparatus for atmospheric pressure plasma enhanced chemical vapor deposition coating of a substrate |
US10167556B2 (en) * | 2014-03-14 | 2019-01-01 | The Board Of Trustees Of The University Of Illinois | Apparatus and method for depositing a coating on a substrate at atmospheric pressure |
-
2017
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0385564A (ja) * | 1989-08-30 | 1991-04-10 | Canon Inc | 画像形成装置 |
JP2000096247A (ja) * | 1998-09-22 | 2000-04-04 | Komatsu Ltd | 表面処理装置 |
JP2001064778A (ja) * | 1999-08-26 | 2001-03-13 | Sharp Corp | プラズマ処理装置およびプラズマ処理方法 |
CN2735710Y (zh) * | 2004-09-11 | 2005-10-19 | 石家庄钢铁股份有限公司 | 一种等离子体驱动装置 |
CN101163370A (zh) * | 2006-10-10 | 2008-04-16 | 馗鼎奈米科技股份有限公司 | 等离子导引机构及应用该导引机构的等离子放电装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110846640A (zh) * | 2018-08-21 | 2020-02-28 | 馗鼎奈米科技股份有限公司 | 电浆镀膜装置 |
CN109267037A (zh) * | 2018-11-21 | 2019-01-25 | 新疆大学 | 常压等离子体增强化学气相沉积方法及采用该方法的设备 |
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