CN108318800A - A kind of GaN base semiconductor laser chip detection device and method - Google Patents
A kind of GaN base semiconductor laser chip detection device and method Download PDFInfo
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- CN108318800A CN108318800A CN201711489225.8A CN201711489225A CN108318800A CN 108318800 A CN108318800 A CN 108318800A CN 201711489225 A CN201711489225 A CN 201711489225A CN 108318800 A CN108318800 A CN 108318800A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2868—Complete testing stations; systems; procedures; software aspects
Abstract
An embodiment of the present invention provides a kind of GaN base semiconductor laser chip detection devices and method, described device to include：Chip loading module, power module, micro-imaging module and laser marking module；Applying certain electric current by power module for chip to be detected makes chip to be detected send out two beam fluorescence respectively from the faces p and front cavity surface, micro-imaging module treats the faces p of detection chip after receiving this two beams fluorescence and front cavity surface carries out fluorescence imaging, and judge whether the active area of chip to be detected has catastrophic optical damage point with the presence or absence of failed areas, front cavity surface, the faces p right over the failed areas of the active area of detection chip are finally treated by laser marking module again and carry out mark so as to subsequent processing.Described device is simple in structure, and can realize the faces the p region mark of the surface of the failed areas for the active area for treating detection chip, positions position of the failed areas in active area with this, function is more abundant, have better practical value.
Description
Technical field
The present embodiments relate to semiconductor laser chip technical fields, swash more particularly, to a kind of GaN base semiconductor
Optical chip detection device and method.
Background technology
GaN base semiconductor laser chip during use, may due to the presence of current stress and temperature stress
Active area is directly or indirectly caused to occur damaging and then generating failed areas, meanwhile, catastrophe may also occur in the front cavity surface of chip
Property optical damage, and then chip is made reliability reduction occur.
In recent years, the application market of GaN base semiconductor laser chip is more and more extensive, but simultaneously to its use condition
Increasingly harsher, reliability requirement is also higher and higher.If therefore there is reduced performance so that failure, needs in time effectively to examine it
It surveys, while positioning to failed areas, cuts sample for the micro-zone analysis of next step and prepare, with the specific failure cause of determination.
But the device used when being detected in the prior art to GaN base semiconductor laser chip is often complicated,
It can only judge to be detected whether chip be damaged by detecting, therefore it is urgent to provide a kind of simple in structure, full-featured is directed to GaN
The detection device of base semiconductor laser chip.
Invention content
An embodiment of the present invention provides a kind of GaN bases for overcoming the above problem or solving the above problems at least partly half
Conductor Laser chip-detecting apparatus and method.
On the one hand an embodiment of the present invention provides a kind of GaN base semiconductor laser chip detection device, described device includes：
Chip loading module, power module, micro-imaging module and laser marking module；Wherein,
The chip loading module includes pedestal and loading stage, and the loading stage is arranged on the base, the loading
The bottom surface of platform is contacted with the upper bottom surface of the pedestal, and one layer of metal contact layer, institute are provided on the upper bottom surface of the loading stage
Metal contact layer is stated for carrying chip to be detected；
The power module includes power supply and positive probe, and the cathode of the power supply is connect with the metal contact layer, institute
One end of positive probe is stated connect with the anode of the power supply, the other end of the positive probe for by with it is described to be detected
The default low-resistance ITO layer in the faces chip p contacts to treat detection chip power supply, so that the chip to be detected from the faces p is sent out first glimmering
Light makes the chip to be detected send out the second fluorescence from front cavity surface；
The micro-imaging module is used to receive first fluorescence and second fluorescence, and according to first fluorescence
The faces p to the chip to be detected and front cavity surface carry out fluorescence imaging respectively with second fluorescence；
The laser marking module be used for the faces the p region right over the active area failed areas of the chip to be detected into
Row mark.
Further, described device further includes speculum group, right-angle prismatic microscope group and light path shielding plate group, wherein
The speculum group includes the first speculum, the second speculum and third speculum, first speculum and institute
The front cavity surface for stating chip to be detected is arranged oppositely, and second speculum and the camera lens of the micro-imaging module are arranged oppositely,
Angle setting in 90 ° between the third speculum and first speculum, and be arranged with second mirror parallel；
The right-angle prismatic microscope group includes the first right angle prism and the second right angle prism, first right angle prism
It is arranged in parallel with the inclined-plane opposite direction of both second right angle prisms, and there are a right-angle side and horizontal plane in the side of the two
It is parallel, and the right-angle prismatic microscope group is arranged between second speculum and the third speculum；
First fluorescence enters the micro-imaging through second right angle prism and second speculum successively
Module, second fluorescence is successively through first speculum, the third speculum, first right angle prism, described
Second right angle prism and second speculum enter the micro-imaging module；
The light path shielding plate group includes the first shielding plate and the second shielding plate, and first shielding plate is located at described first
Between speculum and the third speculum, for cutting off first fluorescence transfer to the micro-imaging by adjusting position
The light path of module, second shielding plate is between the chip to be detected and second right angle prism, for passing through
Adjustment position cuts off second fluorescence transfer to the light path of the micro-imaging module.
Further, described device further includes vacuum module, and the vacuum module includes vacuum pump and vacuum pipe, described
Metal contact layer above the upper bottom surface of loading stage opens up vacuum absorption holes, the vacuum absorption holes by the loading stage inside
The pipeline opened up is connect with the vacuum pipe, and the vacuum absorption holes are used for cover it through the vacuum module
Chip to be detected is fixed on the loading stage.
Further, attenuator group and filter plate are provided between the micro-imaging module and second speculum
Group；Wherein,
The attenuator group is used for before first fluorescence and second fluorescence enter the micro-imaging module,
Attenuation processing is carried out to first fluorescence and second fluorescence；
The filter plate group is used for before first fluorescence and second fluorescence enter the micro-imaging module,
First fluorescence and second fluorescence are filtered.
Further, the laser marking module includes laser marker, expands microscope group and focus microscope group；Wherein,
The laser marker is used for the active area failed areas surface by sending out laser to the chip to be detected
The faces p region carry out mark；
It is described expand microscope group and the spot size for focusing the laser that microscope group is used to send out the laser marker into
Row is adjusted.
Further, described device further includes parameters measurement module, the parameters measurement module and the chip to be detected
Front cavity surface be arranged oppositely, and first speculum is located at the front cavity surface of the parameters measurement module and the chip to be detected
Between；
Correspondingly, the pedestal in the chip loading module is provided with circular scale, is arranged on the loading stage
There is tuning drive gear, and the loading stage can be movable relatively with the pedestal, the relative motion includes：The vertical institute of the loading stage
The upper bottom surface for stating pedestal moves in a straight line, the loading stage the pedestal upper bottom surface around the upper bottom surface center rotating,
Or the loading stage is parallel to the seamed edge of the upper bottom surface in the upper bottom surface of the pedestal and moves in a straight line；
The parameters measurement module includes spectrometer, power meter and scale；Wherein, the spectrometer is for measuring described wait for
Detection chip sends out the wavelength of laser, the power meter and the scale and sends out the fast of laser for measuring the chip to be detected
Slow axis divergence.
Further, the other end of the positive probe is triangular prism shaped, and the positive probe is for the core to be detected
When piece is powered, a seamed edge of the triangular prism shaped protrusion is contacted with the default low-resistance ITO layer in the faces chip p to be detected.
On the other hand GaN base semiconductor laser chip is examined using above-mentioned apparatus an embodiment of the present invention provides a kind of
The method of survey, the method includes：
Apply first electricity for being less than predetermined threshold value between the faces p and the faces n of chip to be detected using power module
Stream, makes the chip to be detected send out the first fluorescence from the faces p, the chip to be detected is made to send out the second fluorescence from front cavity surface；
First fluorescence and second fluorescence are received respectively using micro-imaging module, and respectively to described to be detected
The front cavity surface of the faces p of chip and the chip to be detected carries out fluorescence imaging, obtains first figure in the faces p of the chip to be detected
Second image of the front cavity surface of picture and the chip to be detected；
Judge the active area of the chip to be detected with the presence or absence of failure according to described first image and second image
Region, the chip to be detected front cavity surface whether there is catastrophic optical damage point, if judge know the chip to be detected
Active area there are failed areas, then utilize laser marking module to the active area failed areas of the chip to be detected right over
The faces p region carry out mark.
Further, apply one less than default between the faces p and the faces n of chip to be detected using power module described
Before first electric current of threshold value, the method further includes：
The metal electrode and oxide layer for removing the faces chip p to be detected plate one layer in advance on the faces chip p to be detected
If low-resistance ITO layer.
Further, the method further includes：
Apply between the faces p and the faces n of chip to be detected one using power module and is more than the of the predetermined threshold value
Two electric currents make the chip to be detected send out laser from front cavity surface；
The laser is measured using parameters measurement module, obtains the wavelength and the fast and slow axis angle of divergence of the laser.
A kind of GaN base semiconductor laser chip detection device and method provided in an embodiment of the present invention, pass through power module
Applying certain electric current for chip to be detected makes chip to be detected send out two beam fluorescence, micro-imaging respectively from the faces p and front cavity surface
Module treats the faces p of detection chip after receiving this two beams fluorescence and front cavity surface carries out fluorescence imaging, and judges chip to be detected
Whether active area has catastrophic optical damage point with the presence or absence of failed areas, front cavity surface, finally passes through laser marking module pair again
The faces p region right over the failed areas of the active area of chip to be detected carries out mark so as to subsequent processing.Described device structure
Simply, and can realize the failed areas for treating detection chip active area surface the faces p regions mark, positioned with this
Position of the failed areas in active area, function is more abundant, has better practical value.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of GaN base semiconductor laser chip detection device provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of chip to be detected in the embodiment of the present invention；
Fig. 3 is the structural schematic diagram of chips loading module of the embodiment of the present invention；
Fig. 4 is the structural schematic diagram of positive probe in the embodiment of the present invention；
Fig. 5 is a kind of flow chart of GaN base semiconductor laser chip detection method provided in an embodiment of the present invention；
Reference numeral：
11- laser markers 12- expands microscope group
13- focuses microscope group 21- micro-imaging modules
31- attenuator group 41- filter plate groups
The first right angle prisms of 51-；The second right angle prisms of 52-；
The first speculums of 61-；The second speculums of 62-；
63- third speculums；71- the first light path shielding plates；
72- the second light path shielding plates；73- light path shielding plate connecting rods；
81- tests integrated component；82- power meters；
83- spectrometers；84- scales；
91- power supplys；92- positive probes；
101- presets low-resistance ITO layer；102- chip bodies；
The faces 103-n electrode；111- vacuum pumps；
112- vacuum pipes；121- metal contact layers；
122- loading stages；123- tuning drive gears；
124- dials；125- pedestals.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical solution in the embodiment of the present invention is explicitly described, it is clear that described embodiment is the present invention
A part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not having
The every other embodiment obtained under the premise of creative work is made, shall fall within the protection scope of the present invention.
Fig. 1 is a kind of structural schematic diagram of GaN base semiconductor laser chip detection device provided in an embodiment of the present invention, such as
Shown in Fig. 1, described device includes：Chip loading module, power module, micro-imaging module 21 and laser marking module.Wherein：
The chip loading module includes pedestal 125 and loading stage 122, and the loading stage 122 is arranged in the pedestal 125
On, the bottom surface of the loading stage 122 is contacted with the upper bottom surface of the pedestal 125, is arranged on the upper bottom surface of the loading stage 122
There is one layer of metal contact layer 121, the metal contact layer 121 is for carrying chip to be detected.The power module includes power supply
91 and positive probe 92, the cathode of the power supply 91 connect with the metal contact layer 121, one end of the positive probe 92 with
The other end of the anode connection of the power supply 91, the positive probe 92 is used for by default with the faces chip p to be detected
The contact of low-resistance ITO layer 101 is powered to treat detection chip, and the chip to be detected is made to send out the first fluorescence from the faces p, makes described wait for
Detection chip sends out the second fluorescence from front cavity surface.The micro-imaging module 21 is for receiving first fluorescence and described second
Fluorescence, and the faces p to the chip to be detected and front cavity surface progress are glimmering respectively according to first fluorescence and second fluorescence
Light is imaged.The laser marking module be used for the faces the p region right over the active area failed areas of the chip to be detected into
Row mark.
Wherein, as shown in Fig. 2, the chip to be detected includes default low-resistance ITO layer 101, chip body 102 and the faces n
Electrode 103.
The chip loading module includes a pedestal 125 and a loading stage 122, and 122 upper bottom surface overlying of loading stage
The preferable metal contact layer 121 of one layer of electric conductivity of lid, loading stage 122 can do flat with 125 seamed edge of pedestal in horizontal plane on pedestal
Capable linear movement or circular motion can also do the movement perpendicular to pedestal.
The power module includes a power supply 91 and a positive probe 92, and the cathode of power supply 91 directly uses conducting wire and dress
The metal contact layer 121 of microscope carrier is connected, and anode is preset low-resistance ITO layer with the faces p of chip with probe 92 and contacted, anode probe 92
Answer the fringe region of contact chip side as possible.
Micro-imaging module 21 all has preferable acceptable effect for the fluorescence of each wave band, for the core to sending out fluorescence
The faces piece p carry out microscopic imaging fluorescence with front cavity surface, fluoresce and enter micro-imaging module 21 through light path shown in Fig. 1, aobvious
Signal conversion is carried out in micro- image-forming module 21 through CCD to be imaged at the ends PC.
Specifically, a low current (being much smaller than threshold current) is applied to GaN base semiconductor laser chip, active area
Week fluorescent can both be sent out from front cavity surface, can also be transmitted from the faces p, and the catastrophic optical damage point of front cavity surface and active area
Then unstressed configuration is sent out failed areas, and blackspot is rendered as in micro-imaging module 21.According to GaN base semiconductor laser chip
These characteristics, you can judge whether the active area of chip to be detected has failed areas by 21 imaging of micro-imaging module, together
When judge whether the front cavity surface of chip to be detected has catastrophic optical damage.
If judge know that the active area of chip to be detected has failed areas, for the ease of detection after, directly by waiting for
Detection chip can obtain the position of failed areas on active area, and mark is carried out to failed areas by laser marking module,
In the subsequent processing, is carried out to the chip to be detected after mark only need to can observe on chip to be detected by microscopic observation device
Label, and then know the position of failed areas in chip active area to be detected.
A kind of GaN base semiconductor laser chip detection device provided in an embodiment of the present invention is to be checked by power module
Survey chip, which applies certain electric current, makes chip to be detected send out two beam fluorescence respectively from the faces p and front cavity surface, and micro-imaging module connects
The faces p of detection chip are treated after receiving this two beams fluorescence and front cavity surface carries out fluorescence imaging, and judge the active area of chip to be detected
Whether there is catastrophic optical damage point with the presence or absence of failed areas, front cavity surface, finally again by laser marking module to be detected
The faces p region right over the failed areas of the active area of chip carries out mark so as to subsequent processing.Described device is simple in structure, and
The mark that can realize the faces the p region of the surface for the failed areas for treating detection chip active area, with this come position failure area
Position of the domain in active area, function is more abundant, has better practical value.
Based on above-described embodiment, described device further includes speculum group, right-angle prismatic microscope group and light path shielding plate group.Its
In：
The speculum group includes the first speculum 61, the second speculum 62 and third speculum 63, first reflection
Mirror 61 and the front cavity surface of the chip to be detected are arranged oppositely, the mirror of second speculum 62 and the micro-imaging module 21
Head is arranged oppositely, angle setting in 90 ° between the third speculum 63 and first speculum 61, and instead with described second
Mirror 62 is penetrated to be arranged in parallel.The right-angle prismatic microscope group includes the first right angle prism 51 and the second right angle prism 52, and described the
The inclined-plane opposite direction of both one right angle prism and second right angle prism is arranged in parallel, and the side of the two have one it is straight
The arm of angle is parallel with horizontal plane, and right-angle prismatic microscope group setting second speculum 62 and the third speculum 63 it
Between.First fluorescence enters the micro-imaging mould through second right angle prism 52 and second speculum 62 successively
Block 21, second fluorescence is successively through first speculum 61, the third speculum 63, first right angle prism
51, second right angle prism 52 and second speculum 62 enter the micro-imaging module 21.The light path is blocked
Piece group includes the first shielding plate 71 and the second shielding plate 72, and first shielding plate 71 is located at first speculum 61 and described
Between third speculum 63, for cutting off first fluorescence transfer to the light of the micro-imaging module 21 by adjusting position
Road, second shielding plate 72 is between the chip to be detected and second right angle prism, for by adjusting position
It sets and cuts off second fluorescence transfer to the light path of the micro-imaging module 21, wherein first shielding plate 71 and described
Second shielding plate 72 is connected by light path shielding plate connecting rod 73.
Based on above-described embodiment, described device further includes vacuum module, and the vacuum module includes vacuum pump 111 and vacuum
Pipeline 112, the metal contact layer 121 above the upper bottom surface of the loading stage 122 open up vacuum absorption holes, the vacuum absorption holes
It is connect with the vacuum pipe 112 by the pipeline opened up inside the loading stage 122, the vacuum absorption holes are for passing through institute
It states vacuum module the chip to be detected of cover it is fixed on the loading stage 122.
Specifically, vacuum module, including a vacuum pump 111 and vacuum pipe 112, vacuum pipe extends in loading stage
Portion, and expose vacuum absorption holes in metal contact layer 121.The chip to be detected handled well is put on loading stage 122 and is covered
Firmly vacuum absorption holes open vacuum pump 111, chip to be detected can be fixed on loading stage.Since semiconductor laser chip is non-
Normal light and small, thus slightly shake in detection process can all cause to be imaged it is unintelligible inaccurate with positioning, so using vacuum mold
Block laser chip is tightly adsorbed on the metal contact layer of loading stage be maintained in observation process stablize it is motionless.
Based on above-described embodiment, attenuator group is provided between the micro-imaging module 21 and second speculum 62
31 and filter plate group 41.Wherein：
The attenuator group 31 is used to enter the micro-imaging module 21 in first fluorescence and second fluorescence
Before, attenuation processing is carried out to first fluorescence and second fluorescence.The filter plate group 41 is used for glimmering described first
Light and second fluorescence enter before the micro-imaging module 21, are filtered to first fluorescence and second fluorescence
Wave processing.
Specifically, filtering lens set 41 is arranged as shown in Figure 1, is chip excitation wavelength for selectively allowing wavelength
Neighbouring light passes through, and is filtered to other light, eliminates influence of other light to the faces chip p and front cavity surface fluorescence imaging.
Decaying lens set 31 is arranged as shown in Figure 1, for from the faces chip p to be detected and front cavity surface fluoresce compared with
It is strong and not easily pass through and adjust electric current in the case of adjusting light intensity, different journeys are carried out to the fluorescence of the required wave band by filter plate
The attenuation processing of degree, more clearly to protrude the presence of chip active area failed areas and front cavity surface catastrophic optical damage.
Based on above-described embodiment, the laser marking module includes laser marker 11, expands microscope group 12 and focus microscope group
13.Wherein：
The laser marker 11 is used for by sending out laser to the active area failed areas of the chip to be detected just
The faces the p region of side carries out mark.13 groups of microscope group 12 and the focus lamp of expanding is for sending out the laser marker
The spot size of laser is adjusted.
Specifically, laser marking module expands microscope group 12 and a focusing microscope group comprising a laser marker 11, one
13, it is fixed to carry out accurate mark for the faces the p region right over the active area failed areas to being observed in micro-imaging module
Position, expanding microscope group 12 and focusing microscope group 13 can arbitrarily switch and be amplified and reduced with the hot spot to mark laser as needed.
The original spot radius of laser marker 11 should be 1um ± 0.1um, and the default low-resistance ITO in the faces p of chip to be detected copes with the wave
Long mark laser has the wavelength of preferable absorptivity and mark laser not close with the excitation wavelength of chip, and mark depths are answered
Less than the thickness of low-resistance ITO, and laser beat the hot spot on the faces chip p can in micro-imaging module blur-free imaging.
Based on above-described embodiment, described device further includes parameters measurement module, the parameters measurement module with it is described to be checked
The front cavity surface for surveying chip is arranged oppositely, and first speculum 61 is located at the parameters measurement module and the chip to be detected
Front cavity surface between.
Correspondingly, as shown in figure 3, the pedestal 125 in the chip loading module is provided with circular scale 124,
Tuning drive gear 123 is provided on the loading stage 122, and the loading stage 122 can be movable relatively with the pedestal 125, it is described
Relative motion includes：The upper bottom surface of the vertical pedestal of the loading stage 122 125 moves in a straight line, and the loading stage 122 is in institute
State the upper bottom surface of pedestal 125 around the upper bottom surface center rotating or the loading stage 122 the pedestal 125 upper bottom surface
The seamed edge for being parallel to the upper bottom surface moves in a straight line.
The parameters measurement module includes spectrometer 83, power meter 82 and scale 84.Wherein, the spectrometer 83 is for surveying
The wavelength that the chip to be detected sends out laser, the power meter 82 and the scale 84 are measured for measuring the chip to be detected
Send out the fast and slow axis angle of divergence of laser.
Specifically, parameters measurement module includes 82, spectrometers 83 of a power meter and a scale 84, power meter 82
It is concentrated in a test integrated component 81 with spectrometer 83, power meter 82 can switch respectively with spectrometer 83 to be waited for face receiving
The laser sent out after detection chip power-up, while the precision of power meter 82 should be less than 1mW ranks, while parameter measurement device 81 can
The movement on vertical direction is done, and parameters measurement module integrally can also do the circumference rotation in horizontal plane centered on loading module
Transhipment is dynamic, and the air line distance of parameters measurement module and loading stage 122 may be configured as 200mm or so.
Based on above-described embodiment, the other end of the positive probe 92 is triangular prism shaped, and the positive probe is being described
When chip power supply to be detected, the default low-resistance ITO layer of the seamed edge and the faces chip p to be detected of the triangular prism shaped protrusion
101 contacts.
Specifically, as shown in figure 4, the other end of positive probe 92 is set as triangular prism shaped, itself and default low-resistance can be made
The contact area bigger of ITO layer 101 so that it is treated the power supply of detection chip and more stablizes.
Fig. 5 is a kind of flow chart of GaN base semiconductor laser chip detection method provided in an embodiment of the present invention, such as Fig. 5
It is shown, the method includes：S1 applies one between the faces p and the faces n of chip to be detected using power module and is less than default threshold
First electric current of value, makes the chip to be detected send out the first fluorescence from the faces p, and the chip to be detected is made to send out the from front cavity surface
Two fluorescence；S2 receives first fluorescence and second fluorescence respectively using micro-imaging module, and respectively to described to be checked
The front cavity surface in the faces p and the chip to be detected of surveying chip carries out fluorescence imaging, obtains the first of the faces p of the chip to be detected
Second image of the front cavity surface of image and the chip to be detected；S3 judges according to described first image and second image
The active area of the chip to be detected whether there is catastrophic light with the presence or absence of the front cavity surface of failed areas, the chip to be detected
Impaired loci is learned, there are failed areas if judging to know the active area of the chip to be detected, using laser marking module to institute
It states the faces the p region right over the active area failed areas of chip to be detected and carries out mark.
Further, apply one less than default between the faces p and the faces n of chip to be detected using power module described
Before first electric current of threshold value, the method further includes：
The metal electrode and oxide layer for removing the faces chip p to be detected plate one layer in advance on the faces chip p to be detected
If low-resistance ITO layer.
Specifically, the embodiment of the present invention first has to carry out the faces the p electrode of chip following pre- before being detected chip
Processing：
GaN base semiconductor laser chip after encapsulation is removed from heat sink, and by the metal electrode in the faces chip p and oxidation
Removal is completely exfoliated in layer, then plates last layer low-resistance ITO as the faces p electrode in the faces chip p, and does not destroy core in the guarantee of this process
Piece front cavity surface.
Electrode treatment good chip to be measured in the faces p is placed on loading stage and is covered vacuum absorption holes, the faces n electrode and loading stage
On metal contact layer be in close contact, open vacuum pump, chip to be measured is tightly adsorbed on loading stage.
By the EDGE CONTACT of positive probe and sides of chip on power supply, lead to Weak current (being much smaller than threshold current), core
The faces piece p send out fluorescence with front cavity surface.
If being detected positioning to active area failed areas, front cavity surface fluorescence light path is carried out with light path selection shielding plate
It blocks, fluorescence imaging individually is carried out to the faces p, adjust filtering lens set, it is near chip excitation wavelength selectively only to allow wavelength
Light pass through.The faces micro imaging system chips p fluorescence imaging is observed, according to the power of fluorescence, adjusts power supply or decaying
Lens set increases electric current if fluorescence is too weak；If fluorescence is too strong, reduces electric current or lens set is decayed to required wave by adjusting
Section fluorescence carries out attenuation processing, and adjust loading stage the position of horizontal plane and vertical direction height and micro imaging system
Focal length, the fluorescent image of failed areas can clearly be differentiated by finally being showed in micro imaging system, and failed areas is made to be located at
The centre of visual field.
After the fluorescent image for obtaining clearly differentiating failed areas, laser marker is opened, first allows it to send out a branch of non-
Laser often faint but that its hot spot can be seen in micro imaging system.Mobile laser marker, makes hot spot just in level table
It is located in failed areas well.Microscope group is expanded according to the adjustment of failed areas size or focuses microscope group, makes spot size and failed areas
Then sizableness increases marking machine laser energy and makes a mark to failed areas, but the faces p low-resistance is not to be exceeded in mark depths
The thickness of ITO.If failed areas is in strip, adjustable mark spot diameter is suitable with its width, in strip failure area
Field mark multiple spot.
If observing multiple failed areas by the fluorescent image in the faces chip p, each failed areas is marked successively.
If being detected to front cavity surface catastrophic optical damage, select shielding plate to the faces chip p fluorescence light path with light path
It is blocked, fluorescence imaging individually is carried out to front cavity surface, adjust filtering lens set, it is chip lasing wave selectively only to allow wavelength
Light near long passes through.Micro imaging system chips front cavity surface fluorescence imaging is observed, according to the power of fluorescence, adjusts electricity
Source or decaying lens set, increase electric current if fluorescence is too weak；If fluorescence is too strong, reduce electric current or by adjusting decaying lens set
Attenuation processing is carried out to required wave band fluorescence, and adjust loading stage the position of horizontal plane and vertical direction height and it is micro- at
As the focal length of system, finally showed in micro imaging system can clear resolution optical damage field fluorescent image.
Based on above-described embodiment, the method further includes：Using power module between the faces p and the faces n of chip to be detected
Apply second electric current for being more than the predetermined threshold value, the chip to be detected is made to send out laser from front cavity surface；Utilize ginseng
Number measurement module measures the laser, obtains the wavelength and the fast and slow axis angle of divergence of the laser.
If the fast and slow axis angle of divergence to chip is measured with wavelength, first that first immediately ahead of chip front cavity surface is reflective
Mirror is rotated with upper edge to horizontality, and ensures that the reflective mirror does not block laser beam, then by the faces chip n electrode
It is in close contact with the metal contact layer on loading stage, opens vacuum pump, chip to be measured is tightly adsorbed on loading stage, by power supply
On positive probe and sides of chip EDGE CONTACT, lead to appropriate electric current (being more than threshold current), chip front cavity surface as needed
Laser is sent out, while will be carried out blocking place with selection shielding plate for two light paths of the faces chip p and front cavity surface fluorescence imaging
Reason.
Rotation parameter measurement module makes its forward direction without drift angle receive the laser that chip front cavity surface is sent out, meanwhile, rotation carries
Dial on object module upper bed-plate makes the tuning drive gear on loading stage be overlapped with 0 scale on dial.
If measuring the excitation wavelength of chip, receiving laser with the spectrometer in parameter measurement integrated component can measure；
To measure the fast and slow axis angle of divergence of chip, then：
First by the power meter in parameter measurement device switch to it is positive without drift angle receive that chip front cavity surface sends out swash
Light, and laser facula is overlapped with power meter center；
Then, parameter measurement device is moved straight up, until the laser power that power meter receives is initial power
1/e2Until, it is h that note parameters measurement module, which increases distance, and the horizontal distance of itself and chip front cavity surface is L, then can obtain fast axle
Angle of divergence θv=2arctan (h/L)；
It tests behind fast axis divergence angle and parameter measurement device is classified as initial position, then rotate loading stage, until power
Count the 1/e that the laser power received is initial value2Until, read the angle of loading stage high scale probe rotation, the angle value
2 times just be chip slow axis divergence θh。
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, it will be understood by those of ordinary skill in the art that：It still may be used
With technical scheme described in the above embodiments is modified or equivalent replacement of some of the technical features；
And these modifications or replacements, various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of GaN base semiconductor laser chip detection device, which is characterized in that described device includes：Chip loading module, electricity
Source module, micro-imaging module and laser marking module；Wherein,
The chip loading module includes pedestal and loading stage, and the loading stage is arranged on the base, the loading stage
Bottom surface is contacted with the upper bottom surface of the pedestal, and one layer of metal contact layer, the gold are provided on the upper bottom surface of the loading stage
Belong to contact layer for carrying chip to be detected；
The power module includes power supply and positive probe, and the cathode of the power supply is connect with the metal contact layer, it is described just
The anode of one end of pole probe and the power supply connect, the other end of the positive probe for by with the chip to be detected
The default low-resistance ITO layer in the faces p contacts to treat detection chip power supply, so that the chip to be detected is sent out the first fluorescence from the faces p, makes
The chip to be detected sends out the second fluorescence from front cavity surface；
The micro-imaging module is used to receive first fluorescence and second fluorescence, and according to first fluorescence and institute
It states p face and front cavity surface of second fluorescence respectively to the chip to be detected and carries out fluorescence imaging；
The laser marking module is for beating the faces the p region right over the active area failed areas of the chip to be detected
Mark.
2. device according to claim 1, which is characterized in that described device further include speculum group, right-angle prismatic microscope group with
And light path shielding plate group, wherein
The speculum group includes the first speculum, the second speculum and third speculum, and first speculum is waited for described
The front cavity surface of detection chip is arranged oppositely, and second speculum and the camera lens of the micro-imaging module are arranged oppositely, described
Angle setting in 90 ° between third speculum and first speculum, and be arranged with second mirror parallel；
The right-angle prismatic microscope group includes the first right angle prism and the second right angle prism, first right angle prism and institute
The inclined-plane opposite direction for stating both second right angle prisms is arranged in parallel, and the side of the two has a right-angle side flat with horizontal plane
Row, and the right-angle prismatic microscope group is arranged between second speculum and the third speculum；
First fluorescence enters the micro-imaging module through second right angle prism and second speculum successively,
Second fluorescence is successively through first speculum, the third speculum, first right angle prism, described second straight
Angle prism and second speculum enter the micro-imaging module；
The light path shielding plate group includes the first shielding plate and the second shielding plate, and first shielding plate is located at described first and reflects
Between mirror and the third speculum, for cutting off first fluorescence transfer to the micro-imaging module by adjusting position
Light path, second shielding plate between the chip to be detected and second right angle prism, for by adjusting
Position cuts off second fluorescence transfer to the light path of the micro-imaging module.
3. device according to claim 2, which is characterized in that described device further includes vacuum module, the vacuum module packet
Vacuum pump and vacuum pipe are included, the metal contact layer above the upper bottom surface of the loading stage opens up vacuum absorption holes, the vacuum
Adsorption hole is connect by the pipeline opened up inside the loading stage with the vacuum pipe, and the vacuum absorption holes are for passing through institute
It states vacuum module the chip to be detected of cover it is fixed on the loading stage.
4. device according to claim 2, which is characterized in that set between the micro-imaging module and second speculum
It is equipped with attenuator group and filter plate group；Wherein,
The attenuator group is used for before first fluorescence and second fluorescence enter the micro-imaging module, to institute
It states the first fluorescence and second fluorescence carries out attenuation processing；
The filter plate group is used for before first fluorescence and second fluorescence enter the micro-imaging module, to institute
It states the first fluorescence and second fluorescence is filtered.
5. device according to claim 2, which is characterized in that the laser marking module includes laser marker, beam expanding lens
Group and focusing microscope group；Wherein,
The laser marker is used for by sending out laser to the faces p right over the active area failed areas of the chip to be detected
Region carries out mark；
The spot size for expanding the laser that microscope group and the focusing microscope group are used to send out the laser marker is adjusted
Section.
6. device according to claim 2, which is characterized in that described device further includes parameters measurement module, and the parameter is surveyed
Amount module and the front cavity surface of the chip to be detected are arranged oppositely, and first speculum be located at the parameters measurement module and
Between the front cavity surface of the chip to be detected；
Correspondingly, the pedestal in the chip loading module is provided with circular scale, and quarter is provided on the loading stage
Pointer is spent, and the loading stage can be movable relatively with the pedestal, the relative motion includes：The vertical bottom of the loading stage
The upper bottom surface of seat moves in a straight line, upper bottom surface center rotating or institute around the upper bottom surface of the loading stage in the pedestal
It states loading stage and is parallel to the seamed edge of the upper bottom surface in the upper bottom surface of the pedestal and move in a straight line；
The parameters measurement module includes spectrometer, power meter and scale；Wherein, the spectrometer is described to be detected for measuring
Chip sends out the wavelength of laser, the power meter and the scale for measuring the fast and slow axis that the chip to be detected sends out laser
The angle of divergence.
7. device according to claim 2, which is characterized in that the other end of the positive probe be it is triangular prism shaped, it is described just
Pole probe is when for the chip power supply to be detected, a seamed edge and the faces chip p to be detected of the triangular prism shaped protrusion
Default low-resistance ITO layer contact.
8. a kind of method that GaN base semiconductor laser chip is detected using any one of such as claim 1-7 described devices,
It is characterized in that, the method includes：
Apply first electric current for being less than predetermined threshold value between the faces p and the faces n of chip to be detected using power module, makes
The chip to be detected sends out the first fluorescence from the faces p, and the chip to be detected is made to send out the second fluorescence from front cavity surface；
First fluorescence and second fluorescence are received respectively using micro-imaging module, and respectively to the chip to be detected
The faces p and the chip to be detected front cavity surface carry out fluorescence imaging, obtain the faces p of the chip to be detected the first image and
Second image of the front cavity surface of the chip to be detected；
According to described first image and second image judge the active area of the chip to be detected with the presence or absence of failed areas,
The front cavity surface of the chip to be detected whether there is catastrophic optical damage point, if judging to know the active of the chip to be detected
There are failed areas in area, then utilize laser marking module to the faces p right over the active area failed areas of the chip to be detected
Region carries out mark.
9. method according to claim 8, which is characterized in that it is described using power module in the faces p of chip to be detected and n
Apply one between face to be less than before the first electric current of predetermined threshold value, the method further includes：
The metal electrode and oxide layer for removing the faces chip p to be detected, one layer of plating is default low on the faces chip p to be detected
Hinder ITO layer.
10. method according to claim 8, which is characterized in that the method further includes：
Apply second electricity for being more than the predetermined threshold value between the faces p and the faces n of chip to be detected using power module
Stream, makes the chip to be detected send out laser from front cavity surface；
The laser is measured using parameters measurement module, obtains the wavelength and the fast and slow axis angle of divergence of the laser.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111934186A (en) * | 2020-08-06 | 2020-11-13 | 西安立芯光电科技有限公司 | Method for judging optical catastrophe type of semiconductor laser chip |
| CN113075533A (en) * | 2021-03-25 | 2021-07-06 | 长鑫存储技术有限公司 | Chip detection method and chip detection device |
| CN113253091A (en) * | 2020-02-13 | 2021-08-13 | 欧菲影像技术（广州）有限公司 | Method, device and system for detecting short circuit position of chip |
| CN114002581A (en) * | 2021-11-02 | 2022-02-01 | 中国电子科技集团公司第四十四研究所 | Method for detecting internal interconnection condition of reverse welding chip of focal plane array detector |
| CN113253091B (en) * | 2020-02-13 | 2024-04-30 | 广州得尔塔影像技术有限公司 | Method, device and system for detecting short circuit position of chip |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2444223Y (en) * | 2000-11-06 | 2001-08-22 | 中国科学院物理研究所 | Laser measuring device |
| CN1374165A (en) * | 2001-10-19 | 2002-10-16 | 江苏大学 | Laser shock method and equipment for precise formation |
| CN101762595A (en) * | 2009-12-29 | 2010-06-30 | 上海亨通光电科技有限公司 | Laser scanning scattering detection and classification system for silicon slice surface defects |
| CN102175142A (en) * | 2011-02-12 | 2011-09-07 | 中国科学院光电技术研究所 | Lens center error interference measuring system |
| CN102837125A (en) * | 2011-11-11 | 2012-12-26 | 中国科学院光电研究院 | Laser processing device |
| CN103792765A (en) * | 2012-10-31 | 2014-05-14 | 台达电子工业股份有限公司 | Stereoscopic display solid-state light source module |
| CN103926057A (en) * | 2013-11-14 | 2014-07-16 | 中国电子科技集团公司第十一研究所 | Laser damage resistance testing system |
| CN104142351A (en) * | 2014-07-10 | 2014-11-12 | 深圳清华大学研究院 | Semiconductor laser testing device and method |
| CN206208788U (en) * | 2016-11-30 | 2017-05-31 | 西安中科光电精密工程有限公司 | A kind of ITO electrode three-D pattern detects light path system |
| CN107315014A (en) * | 2017-06-19 | 2017-11-03 | 武汉理工大学 | A kind of cable surface damage detects positioner |
-
2017
- 2017-12-30 CN CN201711489225.8A patent/CN108318800B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2444223Y (en) * | 2000-11-06 | 2001-08-22 | 中国科学院物理研究所 | Laser measuring device |
| CN1374165A (en) * | 2001-10-19 | 2002-10-16 | 江苏大学 | Laser shock method and equipment for precise formation |
| CN101762595A (en) * | 2009-12-29 | 2010-06-30 | 上海亨通光电科技有限公司 | Laser scanning scattering detection and classification system for silicon slice surface defects |
| CN102175142A (en) * | 2011-02-12 | 2011-09-07 | 中国科学院光电技术研究所 | Lens center error interference measuring system |
| CN102837125A (en) * | 2011-11-11 | 2012-12-26 | 中国科学院光电研究院 | Laser processing device |
| CN103792765A (en) * | 2012-10-31 | 2014-05-14 | 台达电子工业股份有限公司 | Stereoscopic display solid-state light source module |
| CN103926057A (en) * | 2013-11-14 | 2014-07-16 | 中国电子科技集团公司第十一研究所 | Laser damage resistance testing system |
| CN104142351A (en) * | 2014-07-10 | 2014-11-12 | 深圳清华大学研究院 | Semiconductor laser testing device and method |
| CN206208788U (en) * | 2016-11-30 | 2017-05-31 | 西安中科光电精密工程有限公司 | A kind of ITO electrode three-D pattern detects light path system |
| CN107315014A (en) * | 2017-06-19 | 2017-11-03 | 武汉理工大学 | A kind of cable surface damage detects positioner |
Non-Patent Citations (2)
| Title |
|---|
| KEN-YEN CHEN, CHING-HO TIEN, CHEN-PENG HSU, CHAO-YU PAI, AND RAY: "Fabrication and Improved Performance of GaN LEDs With Finger-Type Structure", 《IEEE TRANSACTIONS ON ELECTRON DEVICES》 * |
| 陈礼清，赵瑞豪，孙明圣，林光启，苏科，胡启誉，贾辉: "激光电压探测及成像技术在失效分析中的应用", 《半导体技术》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113253091A (en) * | 2020-02-13 | 2021-08-13 | 欧菲影像技术（广州）有限公司 | Method, device and system for detecting short circuit position of chip |
| CN113253091B (en) * | 2020-02-13 | 2024-04-30 | 广州得尔塔影像技术有限公司 | Method, device and system for detecting short circuit position of chip |
| CN111934186A (en) * | 2020-08-06 | 2020-11-13 | 西安立芯光电科技有限公司 | Method for judging optical catastrophe type of semiconductor laser chip |
| CN111934186B (en) * | 2020-08-06 | 2021-06-15 | 西安立芯光电科技有限公司 | Method for judging optical catastrophe type of semiconductor laser chip |
| CN113075533A (en) * | 2021-03-25 | 2021-07-06 | 长鑫存储技术有限公司 | Chip detection method and chip detection device |
| CN113075533B (en) * | 2021-03-25 | 2021-12-17 | 长鑫存储技术有限公司 | Chip detection method and chip detection device |
| CN114002581A (en) * | 2021-11-02 | 2022-02-01 | 中国电子科技集团公司第四十四研究所 | Method for detecting internal interconnection condition of reverse welding chip of focal plane array detector |
| CN114002581B (en) * | 2021-11-02 | 2023-11-21 | 中国电子科技集团公司第四十四研究所 | Method for detecting interconnection condition of inside of flip chip of focal plane array detector |
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