CN111934186B - Method for judging optical catastrophe type of semiconductor laser chip - Google Patents
Method for judging optical catastrophe type of semiconductor laser chip Download PDFInfo
- Publication number
- CN111934186B CN111934186B CN202010783751.0A CN202010783751A CN111934186B CN 111934186 B CN111934186 B CN 111934186B CN 202010783751 A CN202010783751 A CN 202010783751A CN 111934186 B CN111934186 B CN 111934186B
- Authority
- CN
- China
- Prior art keywords
- current
- semiconductor laser
- chip
- laser chip
- judging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 230000003287 optical effect Effects 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000012360 testing method Methods 0.000 claims abstract description 25
- 230000032683 aging Effects 0.000 claims description 18
- 230000000630 rising effect Effects 0.000 claims description 8
- 230000001174 ascending effect Effects 0.000 claims description 4
- 238000001727 in vivo Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000001514 detection method Methods 0.000 abstract description 2
- 239000000523 sample Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000010147 laser engraving Methods 0.000 description 1
- 238000010330 laser marking Methods 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0021—Degradation or life time measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0035—Simulations of laser characteristics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0042—On wafer testing, e.g. lasers are tested before separating wafer into chips
Abstract
The invention provides a method for judging an optical catastrophe type of a semiconductor laser chip, which solves the problems of high judgment cost, long judgment time and low production efficiency of COBD and COMD of the conventional semiconductor laser chip. The method comprises the following steps: step one, setting a loading current; loading a loading current on the semiconductor laser chip; collecting a current-power curve and a current-voltage curve of the semiconductor laser chip; if the current-power curve suddenly drops and the current-voltage curve suddenly rises, judging that the optical catastrophe of the chip is COMD; and if the current-power curve suddenly drops and the current-voltage curve suddenly drops, judging that the optical catastrophe of the chip is COBD. The method can judge the COBD and the COMD only by collecting the current, the power value and the voltage value in the test process without professional equipment, has simple detection equipment and lower cost, and can judge the failure only by common technicians.
Description
Technical Field
The invention belongs to the field of semiconductor laser failure analysis, and particularly relates to a method for judging an optical catastrophe type of a semiconductor laser chip.
Background
Semiconductor lasers are increasingly used as indirect or direct light sources in the fields of laser fiber communication, industrial shipbuilding, automobile manufacturing, laser engraving, laser marking, laser cutting, printing and roll making, metal and nonmetal drilling/cutting/welding and the like. Meanwhile, with the development of intellectualization and miniaturization, semiconductor lasers are becoming the main pump sources of fiber lasers.
Epitaxial material growth and chip fabrication (facet coating) are particularly important if semiconductor laser chips are to exhibit performance in epitaxial design. Defects or non-uniformity generated in the growth process of the epitaxial material can affect the reliability of the chip, and even COBD (satellite Optical Bulk Damage) occurs in the chip. The cavity surface coating process in the chip manufacturing process is also an important link, when the semiconductor laser chip is produced, cavity surface cleavage is mostly carried out in the atmospheric environment, the cavity surface of the chip cleaved in the atmospheric environment is easy to oxidize, and the oxidation layer forms a non-radiative recombination center. When the chip works, the non-radiative recombination center absorbs Optical energy and converts the Optical energy into heat energy, so that the forbidden bandwidth of the cavity surface is narrowed, further more Optical energy is absorbed, heat energy positive feedback is formed, and COMD (complementary Optical Mirror dam) appears on the cavity surface finally
When a semiconductor laser chip leaves a factory, the semiconductor laser chip can be shipped only by carrying out limit and reliability tests, the chip can be tested to be invalid in the limit test process, but after the chip is invalid, the reason for the invalid is judged to be complex, and professional invalid analysis means, experience and equipment are needed. The COBD and the COMD are two most common failure types, the COMD can be observed only under a high-power metallographic microscope, the COBD is a semiconductor laser intracavity failure, an Electroluminescence (EL) technology is required for analysis, the technology requires sample preparation and infrared CCD and other key equipment components required by an EL system, and the sample preparation requires very rich experience of technicians.
In summary, the conventional COBD and COMD semiconductor laser chips need professional equipment and professionals with abundant experience to judge, so that the judgment cost is high, the judgment time is long, the production efficiency is low, and therefore finding a method for quickly judging the failure mode is particularly important.
Disclosure of Invention
The invention aims to solve the problems of high judgment cost, long judgment time and low production efficiency of COBD and COMD of the conventional semiconductor laser chip and provides a method for judging the optical catastrophe type of the semiconductor laser chip.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a method for judging the optical catastrophe type of a semiconductor laser chip comprises the following steps:
step one, setting a rising step length and a maximum value of a loading current;
step two, loading a loading current on the semiconductor laser chip according to the ascending step length and the maximum value determined in the step one in the chip testing process;
collecting a current-power curve and a current-voltage curve of the semiconductor laser chip;
step four, judging the failure type of the semiconductor laser chip according to the current-power curve and the current-voltage curve obtained in the step three;
if the current-power curve suddenly drops and the current-voltage curve suddenly rises, judging that the optical catastrophe of the chip is COMD;
and if the current-power curve suddenly drops and the current-voltage curve suddenly drops, judging that the optical catastrophe of the chip is COBD.
Furthermore, in the first step, the rising step length of the loading current is 0.1-1.0A, and the maximum value is 1.0-1.5 times of the rated current of the semiconductor laser chip.
Meanwhile, the invention also provides another method for judging the optical catastrophe type of the semiconductor laser chip, which comprises the following steps:
step one, setting a loading current as a constant value;
step two, loading a loading current on the semiconductor laser chip according to the constant value determined in the step one in the chip aging process;
collecting a time-power curve and a time-voltage curve of the semiconductor laser chip along with the change of time;
step four, judging the failure type of the semiconductor laser chip according to the time-power curve and the time-voltage curve obtained in the step three;
if the time-power curve suddenly drops and the time-voltage curve suddenly rises, judging that the optical catastrophe of the chip is COMD;
and if the time-power curve suddenly drops and the time-voltage curve suddenly drops, judging that the optical catastrophe of the chip is COBD.
Further, in the step one, the constant value of the loading current is 1.0-1.5 times of the rated current of the semiconductor laser chip.
Compared with the prior art, the technical scheme of the invention has the following technical effects:
1. the method for judging the optical catastrophe type of the semiconductor laser chip does not need professional equipment, only needs to add a data acquisition card on the test equipment, acquires the current, the power value and the voltage value in the test process, simultaneously draws a current-power curve and a current-voltage curve, can judge the COBD and the COMD according to the variation trend of the current-power curve and the current-voltage curve, has simple detection equipment and lower cost, does not need professional technicians, and can judge the failure only by common technicians.
2. The method for judging the optical catastrophe type of the semiconductor laser chip is simple and easy to implement, and can quickly judge the COBD and the COMD only by judging the change of a current-voltage curve loaded on the semiconductor laser chip when the chip fails (the power is suddenly reduced), so that the failure analysis efficiency of the semiconductor laser chip in the testing and aging processes is greatly improved.
3. The method for judging the optical catastrophe type of the semiconductor laser chip can quickly and comprehensively detect the COBD and the COMD of the semiconductor laser chip, provides a failure mechanism, further obtains a corresponding improvement scheme for improving the reliability of the laser, and has very important significance for improving the reliability of the semiconductor laser pumped solid laser.
Drawings
FIG. 1 is a flow chart of a method of determining an optical catastrophe type of a semiconductor laser chip of the present invention;
FIG. 2 is a schematic diagram of the 1830nm 2W chip test failure (COBD) of the present invention;
FIG. 3 is a schematic diagram of a 976nm 12W chip test fail (COMD) according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the following figures and specific examples:
the applicant finds that when a semiconductor chip fails, the current-power curve of the semiconductor chip suddenly and greatly drops, and the failure is mostly optical catastrophe. At this time, if optical catastrophe, namely COBD, occurs in the cavity, a PN junction of the quantum well is damaged due to defects and the like, so that characteristics of the PN junction are deteriorated, a microscopic current channel is formed, and thus, voltage is reduced, and voltage is suddenly reduced when the voltage is expressed on a current-voltage curve; if optical catastrophe, i.e. COMD, occurs on the cavity surface, the light extraction efficiency of the cavity surface is lowered due to burnout of the semiconductor material of the cavity surface, the carrier recombination efficiency in the quantum well is lowered, the carrier concentration is increased, the energy band difference between the conduction band and the valence band top is increased, and thus the voltage is increased, which is reflected on the current-voltage curve and suddenly rises. Based on the phenomenon, the invention provides a method for judging the optical catastrophe type of a semiconductor laser chip, which monitors the voltage of the chip besides monitoring the optical power of the chip during the chip testing and aging process, if the chip fails (namely the power suddenly drops), the voltage of the chip changes, the voltage curve along with the current deviates from the slope of the current-voltage to appear a sudden rise or a sudden drop, wherein the failure phenomenon that the voltage suddenly rises along with the current curve is COMD, and the failure phenomenon that the voltage suddenly drops along with the current curve is COBD.
As shown in fig. 1, in the chip testing process, the method for judging the optical catastrophe type of the semiconductor laser chip provided by the invention specifically comprises the following steps:
step one, setting a rising step length and a maximum value of a loading current;
in the step, the rising step length of the loading current is generally 0.1-1.0A, the maximum value is 1.0-1.5 times of the rated current of the semiconductor laser chip, for example, a 976-12W device is used, the rising step length of the loading current is 0.1-1.0A, and the maximum value is 12-18A;
step two, loading a loading current on the semiconductor laser chip according to the ascending step length and the maximum value determined in the step one in the chip testing process;
collecting a current-power curve and a current-voltage curve of the semiconductor laser chip;
step four, judging the failure type of the semiconductor laser chip according to the current-power curve and the current-voltage curve obtained in the step three;
if the current-power curve suddenly drops and the current-voltage curve suddenly rises, judging that the optical catastrophe of the chip is COMD; and if the current-power curve suddenly drops and the current-voltage curve suddenly drops, judging that the optical catastrophe of the chip is COBD.
Meanwhile, in the chip aging process, the invention also provides a method for judging the optical catastrophe type of the semiconductor laser chip, which comprises the following steps:
step one, setting a loading current as a constant value;
in the step, the constant value is generally 1.0-1.5 times of the rated current of the semiconductor laser chip, and the range of the constant value is 12-18A by taking the aging of a 976-12W device as an example;
step two, loading a loading current on the semiconductor laser chip according to the constant value determined in the step one in the chip aging process;
collecting a time-power curve and a time-voltage curve of the semiconductor laser chip along with the change of time;
step four, judging the failure type of the semiconductor laser chip according to the time-power curve and the time-voltage curve obtained in the step three;
if the time-power curve suddenly drops and the time-voltage curve suddenly rises, judging that the optical catastrophe of the chip is COMD; and if the time-power curve suddenly drops and the time-voltage curve suddenly drops, judging that the optical catastrophe of the chip is COBD.
The test equipment implemented by the method comprises test equipment of the bare bar, COS device test equipment and COS device aging equipment, each device is an independent test or aging system, and each system comprises all current, power and voltage acquisition systems.
Example one
The method for judging the optical catastrophe type of the semiconductor laser chip (bare chip) comprises the following steps:
step one, setting a current rising step length and a maximum current (correspondingly adjusting according to a product type);
placing the bare bar chip subjected to film coating on a bar test bench, wherein the P surface is upward (positive electrode), the N surface of the bar chip is in metal contact with a copper plate bar of the test bench, and the copper plate bar is electrically connected with a negative electrode; adjusting two probes of the test bench, wherein current is added to one probe to contact with the P surface of the bare bar chip, and the other probe acquires voltage of the bar chip;
turning on a power supply, collecting a current-power curve of the test chip, and collecting a current-voltage curve at the same time;
and step four, analyzing the current-power curve and the current-voltage curve, judging the failure type according to the change of the current-voltage curve (whether the current-voltage curve deviates from the slope of the original current-voltage curve) as shown in fig. 2, if the power suddenly drops and the voltage suddenly rises, judging that the optical catastrophe of the chip is COMD, and if the power suddenly drops and the voltage suddenly drops, judging that the optical catastrophe of the chip is COBD.
Example two
The method for judging the optical catastrophe type of the semiconductor laser chip (COS chip) comprises the following steps:
step one, setting a current rising step length and a maximum current (correspondingly adjusting according to a product type);
mounting the packaged COS chip on a COS test fixture, and mounting the test fixture on a COS test platform; connecting positive and negative electrodes to the COS test fixture, wherein the positive and negative electrodes are connected with a data acquisition card and can acquire current and voltage data, and power data are acquired by an integrating sphere;
turning on a power supply, collecting a current-power curve of the test chip, and collecting a current-voltage curve at the same time;
and step four, analyzing the current-power curve and the current-voltage curve, judging the failure type according to the change of the current-voltage curve (whether the current-voltage curve deviates from the slope of the original current-voltage curve or not) as shown in fig. 3, if the power suddenly drops and the voltage suddenly rises, judging that the optical catastrophe of the chip is COMD, and if the power suddenly drops and the voltage suddenly drops, judging that the optical catastrophe of the chip is COBD.
EXAMPLE III
The method for judging the optical catastrophe type of the semiconductor laser chip (COS chip aging) comprises the following steps:
step one, setting an aging current;
mounting the packaged COS chip on a COS aging clamp, and mounting the aging clamp on a COS aging cabinet; adding an aging current required by a product to a COS aging cabinet, wherein the anode and the cathode of a COS aging clamp are connected with a data acquisition card, current and voltage data can be acquired, and power data is acquired by an integrating sphere;
step three, monitoring the power value change trend and the voltage value change trend of the COS device aging;
analyzing a power trend curve and a voltage value trend curve of the COS device, and judging that the COS device is failed to be COBD when the monitored power value suddenly drops and the voltage value drops; if the power value suddenly drops and the voltage value rises, the failure of the COS device is judged to be COMD.
Claims (4)
1. A method for judging the optical catastrophe type of a semiconductor laser chip is characterized by comprising the following steps:
step one, setting a rising step length and a maximum value of a loading current;
step two, loading a loading current on the semiconductor laser chip according to the ascending step length and the maximum value determined in the step one in the chip testing process;
collecting a current-power curve and a current-voltage curve of the semiconductor laser chip;
step four, judging the failure type of the semiconductor laser chip according to the current-power curve and the current-voltage curve obtained in the step three;
if the current-power curve suddenly drops and the current-voltage curve suddenly rises, judging that the optical catastrophe of the chip is the optical catastrophe damage of the cavity surface;
and if the current-power curve suddenly drops and the current-voltage curve suddenly drops, judging that the optical catastrophe of the chip is the optical catastrophe damage in vivo.
2. A method of determining an optical catastrophe type of a semiconductor laser chip as claimed in claim 1 wherein: in the first step, the ascending step length of the loading current is 0.1-1.0A, and the maximum value is 1.0-1.5 times of the rated current of the semiconductor laser chip.
3. A method for judging the optical catastrophe type of a semiconductor laser chip is characterized by comprising the following steps:
step one, setting a loading current as a constant value;
step two, loading a loading current on the semiconductor laser chip according to the constant value determined in the step one in the chip aging process;
collecting a time-power curve and a time-voltage curve of the semiconductor laser chip along with the change of time;
step four, judging the failure type of the semiconductor laser chip according to the time-power curve and the time-voltage curve obtained in the step three;
if the time-power curve suddenly drops and the time-voltage curve suddenly rises, judging that the optical catastrophe of the chip is the cavity surface optical catastrophe damage;
if the time-power curve suddenly drops and the time-voltage curve suddenly drops, the optical catastrophe of the chip is judged to be in-vivo optical catastrophe damage.
4. A method of determining an optical catastrophe type of a semiconductor laser chip as claimed in claim 3 wherein: in the first step, the constant value of the loading current is 1.0-1.5 times of the rated current of the semiconductor laser chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010783751.0A CN111934186B (en) | 2020-08-06 | 2020-08-06 | Method for judging optical catastrophe type of semiconductor laser chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010783751.0A CN111934186B (en) | 2020-08-06 | 2020-08-06 | Method for judging optical catastrophe type of semiconductor laser chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111934186A CN111934186A (en) | 2020-11-13 |
| CN111934186B true CN111934186B (en) | 2021-06-15 |
Family
ID=73308051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010783751.0A Active CN111934186B (en) | 2020-08-06 | 2020-08-06 | Method for judging optical catastrophe type of semiconductor laser chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111934186B (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5617957A (en) * | 1993-07-13 | 1997-04-08 | Sumitomo Electric Industries, Ltd. | Method of sorting semiconductor lasers |
| US6898224B2 (en) * | 2001-08-22 | 2005-05-24 | The Furukawa Electric Co., Ltd. | Semiconductor laser device |
| US7555027B2 (en) * | 2005-12-07 | 2009-06-30 | Innolume Gmbh | Laser source with broadband spectrum emission |
| CN201853943U (en) * | 2010-11-04 | 2011-06-01 | 美泰普斯光电科技（大连）有限公司 | Aging test control system for semiconductor lasers |
| CN102097746A (en) * | 2009-12-11 | 2011-06-15 | 松下电器产业株式会社 | Semiconductor laser device and method of manufacturing the device |
| CN103001119A (en) * | 2011-09-16 | 2013-03-27 | 山东浪潮华光光电子有限公司 | Inverted laser chip based on SiC substrate and manufacturing method of inverted laser chip |
| CN205015147U (en) * | 2015-09-25 | 2016-02-03 | 西安立芯光电科技有限公司 | A integrated test system for semiconductor laser chamber face failure analysis |
| CN105425136A (en) * | 2015-12-25 | 2016-03-23 | 中国科学院半导体研究所 | Semiconductor laser device electrostatic failure analysis method |
| EP3228498A1 (en) * | 2014-12-03 | 2017-10-11 | Koito Manufacturing Co., Ltd. | Vehicular light fixture, abnormality detector for light source thereof, and photodiode module |
| CN108318800A (en) * | 2017-12-30 | 2018-07-24 | 北京工业大学 | A kind of GaN base semiconductor laser chip detection device and method |
| US10362663B1 (en) * | 2018-02-07 | 2019-07-23 | Osram Sylvania Inc. | Overdrive dimming |
| CN111106528A (en) * | 2019-11-28 | 2020-05-05 | 苏州长光华芯光电技术有限公司 | Film coating method of semiconductor laser and semiconductor laser |
| CN111176064A (en) * | 2020-03-09 | 2020-05-19 | 青岛海信激光显示股份有限公司 | Laser projection device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105807197A (en) * | 2014-12-29 | 2016-07-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Detection method of semiconductor laser degradation mechanism |
| JP7150705B2 (en) * | 2017-05-01 | 2022-10-11 | ヌヴォトンテクノロジージャパン株式会社 | Nitride light emitting device |
-
2020
- 2020-08-06 CN CN202010783751.0A patent/CN111934186B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5617957A (en) * | 1993-07-13 | 1997-04-08 | Sumitomo Electric Industries, Ltd. | Method of sorting semiconductor lasers |
| US6898224B2 (en) * | 2001-08-22 | 2005-05-24 | The Furukawa Electric Co., Ltd. | Semiconductor laser device |
| US7555027B2 (en) * | 2005-12-07 | 2009-06-30 | Innolume Gmbh | Laser source with broadband spectrum emission |
| CN102097746A (en) * | 2009-12-11 | 2011-06-15 | 松下电器产业株式会社 | Semiconductor laser device and method of manufacturing the device |
| CN201853943U (en) * | 2010-11-04 | 2011-06-01 | 美泰普斯光电科技（大连）有限公司 | Aging test control system for semiconductor lasers |
| CN103001119A (en) * | 2011-09-16 | 2013-03-27 | 山东浪潮华光光电子有限公司 | Inverted laser chip based on SiC substrate and manufacturing method of inverted laser chip |
| EP3228498A1 (en) * | 2014-12-03 | 2017-10-11 | Koito Manufacturing Co., Ltd. | Vehicular light fixture, abnormality detector for light source thereof, and photodiode module |
| CN205015147U (en) * | 2015-09-25 | 2016-02-03 | 西安立芯光电科技有限公司 | A integrated test system for semiconductor laser chamber face failure analysis |
| CN105425136A (en) * | 2015-12-25 | 2016-03-23 | 中国科学院半导体研究所 | Semiconductor laser device electrostatic failure analysis method |
| CN108318800A (en) * | 2017-12-30 | 2018-07-24 | 北京工业大学 | A kind of GaN base semiconductor laser chip detection device and method |
| US10362663B1 (en) * | 2018-02-07 | 2019-07-23 | Osram Sylvania Inc. | Overdrive dimming |
| CN111106528A (en) * | 2019-11-28 | 2020-05-05 | 苏州长光华芯光电技术有限公司 | Film coating method of semiconductor laser and semiconductor laser |
| CN111176064A (en) * | 2020-03-09 | 2020-05-19 | 青岛海信激光显示股份有限公司 | Laser projection device |
Non-Patent Citations (2)
| Title |
|---|
| Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy;A. V. Ankudinov等;《JOURNAL OF APPLIED PHYSICS》;20030101;第93卷(第1期);第432-437页 * |
| 高功率半导体量子阱激光器测试中的灾变性损伤;曹玉莲等;《发光学报》;20021031;第23卷(第5期);第477-480页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111934186A (en) | 2020-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112179919B (en) | Failure analysis method for semiconductor laser chip | |
| WO2007084970A2 (en) | Method and apparatus for nondestructively evaluating light-emitting materials | |
| US4573255A (en) | Purging: a reliability assurance technique for semiconductor lasers utilizing a purging process | |
| CN114740384B (en) | Storage battery equipment detection device that photovoltaic power generation system used | |
| CN111934186B (en) | Method for judging optical catastrophe type of semiconductor laser chip | |
| Nogueira et al. | Accelerated life test of high luminosity AlGaInP LEDs | |
| US6830940B1 (en) | Method and apparatus for performing whole wafer burn-in | |
| Lisak et al. | Bonding stress and reliability of high power GaAs-based lasers | |
| Saul et al. | Reliability of InGaAs photodiodes for SL applications | |
| US6255707B1 (en) | Semiconductor laser reliability test structure and method | |
| JP2008227463A (en) | Method and apparatus for inspecting light-emitting element, method and apparatus for burn-in | |
| Johnson | Laser diode burn-in and reliability testing | |
| US7482828B2 (en) | Methods and apparatus for device testing at the wafer level | |
| US11581849B2 (en) | Measurement method of subcell photocurrents and their matching degree of a multi-junction photovoltaic cell | |
| CN115189219A (en) | Method for obtaining optimal aging condition of edge-emitting laser chip and method for screening chip by adopting condition | |
| CN113203937A (en) | Semiconductor light emitting chip reliability screening method | |
| Bauer et al. | Long-term operation of planar InGaAs/InP pin photodiodes | |
| KR101113642B1 (en) | Device and method for inspecting defective MEA of fuel cell | |
| KR101153339B1 (en) | Method for inspecting semiconductor light emitting device | |
| Kim et al. | Effects of carrier leakage on photoluminescence properties of GaN-based light-emitting diodes at room temperature | |
| CN113125919A (en) | Photosensitive diode chip detection device for laser | |
| JP2012043870A (en) | Method for manufacturing photovoltaic module | |
| CN211528603U (en) | Device for detecting multiple laser chips by power-up | |
| CN117198941A (en) | Positioning method for gallium arsenide-based solar cell surface leakage defect | |
| Rao et al. | Characterization of junction temperature of blue LED using centroid wavelength combined with FWHM |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231124 Address after: Room 301, 3rd Floor, Building 7, Kunpeng Zhizaoyuan, Dongjiangdu Village, Diaotai Street, Fengxi New City, Xi'an City, Shaanxi Province, 712000 Patentee after: Lingsu Medical Technology (Shaanxi) Co.,Ltd. Address before: 710077 1 / F, building 2, No. 56, zhangbaliu Road, high tech Zone, Xi'an City, Shaanxi Province Patentee before: XI'AN LUMCORE OPTOELECTRONICS TECHNOLOGIES CO.,LTD. |
|
| TR01 | Transfer of patent right |