CN201853943U - Aging test control system for semiconductor lasers - Google Patents
Aging test control system for semiconductor lasers Download PDFInfo
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- CN201853943U CN201853943U CN 201020590842 CN201020590842U CN201853943U CN 201853943 U CN201853943 U CN 201853943U CN 201020590842 CN201020590842 CN 201020590842 CN 201020590842 U CN201020590842 U CN 201020590842U CN 201853943 U CN201853943 U CN 201853943U
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Abstract
The utility model discloses an aging test control system for semiconductor lasers. The system mainly includes the work as follows: monitoring of adjustable bias current offering to a laser, as well as of laser backlight current, setting and monitoring of interior temperature of the laser in work, and detecting of the peripheral environment of the laser. By changing the work temperature of the laser and monitoring ambient temperature, the system achieves quality verification of laser products, further verifies the working capacity of the laser. A plurality of circuit drive boards with the same design communicate through an IIC interface and then are transferred to a USB through the IIC to realize communication with a PC (personal computer), as well as the purpose of real-time monitoring through the computer. Therefore, the aging test control system not only achieves multiplex communication, as well as the aim of screening lasers through software judgment.
Description
Technical field
The utility model designing semiconductor field of lasers, particularly a kind of semiconductor laser ageing test control system.
Background technology
Semiconductor laser ageing is in order to improve the semiconductor kistributed-feedback laser reliability of products, stability and a kind of control circuit of design.Under hot environment,, provide a stable controlled current flow to laser by last electrical testing, and veneer drive circuit and main frame are communicated by IIC communication, the temperature of real time monitoring, control laser is to reach reliability screening, with a kind of device of early stage bad product filtering.
The reliability and the life-span of laser more and more are subject to people's attention.Yet, up to the present, the performance of long-time testing laser device is carried out fewerly under the high temperature, reason owing to each side such as fund and technology, and laser ageing apparatus expensive, a lot of laser manufacturers are directly determined the operational environment of product according to the TEC ability to work, really do not make laser carry out work in the hot environment of reality, test that system is not comprehensive.
Summary of the invention
The purpose of this utility model is, provide a kind of can intelligence laser is screened and the semiconductor laser ageing test control system that cost is low, precision is high, reliability is high.
In order to achieve the above object, a kind of semiconductor laser ageing test control system of a kind of semiconductor laser ageing test control system that the utility model provides, it is characterized in that, described control system is made up of at least one separate drive circuit board, and described drive circuit board is made up of crossing current control circuit and temperature-control circuit.
Described crossing current control circuit is composed as follows: the normal phase input end of the first integrated operational amplifier U1A is set input voltage by port DCAcurrset, is connected with port LD by resistance R 3; The inverting input of the first one-tenth operational amplifier U1A is by resistance R 5 ground connection, and resistance R 8 is connected between the inverting input and output of the first one-tenth operational amplifier U1A with the parallel circuits that capacitor C 2 is formed; The output of the described first integrated operational amplifier U1A is connected with port LD with the parallel circuits that R7 forms by R6; The positive supply termination forward bias voltage of the first integrated operational amplifier U1A, and by capacitor C 1 ground connection; The negative power end ground connection of the first integrated operational amplifier U1A.
Described temperature-control circuit is composed as follows: the normal phase input end of the second integrated operational amplifier U4A connects the 1.8V reference voltage by resistance R 11; The inverting input of the second integrated operational amplifier U4A is connected with port TempErr by resistance R 13, and the inverting input of the second integrated operational amplifier U4A is connected with the output of the second integrated operational amplifier U4A by capacitor C 6, resistance R 18 successively; The output of the second integrated operational amplifier U4A is connected with pin-IN of audio frequency power amplifier chip U3 by resistance R 14; The pin SHDN of audio frequency power amplifier chip U3 is connected with port TEC_SHDN; The pin BYPASS of audio frequency power amplifier chip U3 ,+IN imports identical forward voltage 1.8V; Pin-IN of audio frequency power amplifier chip U3 is connected with pin VD+ by resistance R 15, and pin VD+ is connected with port TEC-; The pin VDD of audio frequency power amplifier chip U3 adds forward bias voltage, and by capacitor C 7 ground connection; The pin GND ground connection of audio frequency power amplifier chip U3; The pin VD-of audio frequency power amplifier chip U3 is connected with port TEC+; The normal phase input end of the 3rd integrated operational amplifier U4B connects forward voltage by resistance R 21, and directly is connected with port RTH; The inverting input of the 3rd integrated operational amplifier U4B is connected with port DCATempctrl by resistance R 22, and the parallel circuits of forming by resistance R 24, capacitor C 10 is connected with the output of the 3rd integrated operational amplifier U4B; The output of the 3rd integrated operational amplifier U4B is connected with port TempErr; The positive supply termination forward bias voltage of the 3rd integrated operational amplifier U4B, and by capacitor C 9 ground connection; The negative power end ground connection of the 3rd integrated operational amplifier U4B.
Wherein, port DCAcurrset represents to provide the control voltage of constant current to laser, and it is exported by analog-digital chip; Port LD represents laser diode, port TEC_SHDN represents the switch of temperature-control circuit, control by the high-low level that one-chip machine port is directly exported, port DCATempctrl represents the control voltage of die temperature in the work of setting laser device, port TempErr represents the voltage deviation that the deviation of temperature converts in the temperature control circuit, it directly links to each other with R13 and constitutes the integration ratio circuit with the back circuit, port TEC-represents the negative terminal of laser internal refrigeration storage device, port TEC+ represents the anode of laser internal refrigeration storage device, and port RTH represents that laser inside is used to monitor the thermistor of die temperature.
Wherein, the parallel circuits ground connection that the normal phase input end of the described first integrated operational amplifier U1A is formed by resistance R 3, backward diode D1 and capacitor C 3 successively reaches the purpose of protecting laser diode.
Wherein, the positive supply termination forward bias voltage of the first integrated operational amplifier U1A, the second integrated operational amplifier U4A and the 3rd integrated operational amplifier U4B is 3.3V; The pin BYPASS of described audio frequency power amplifier chip U3 ,+IN and VDD input forward voltage is respectively 1.8V, 1.8V and 3.3V; The forward voltage that normal phase input end adds of the described second integrated operational amplifier U4A is 2.5V; Requiring the A/D of single chip machine controlling circuit part and the conversion accuracy of D/A conversion chip is 16, and the reference voltage of conversion chip is 3.0V.
Wherein, described drive circuit board is provided with the IIC communication port.
Wherein, described IIC communication port is connected with PC by USB interface.
Wherein, adopt the refrigerator of audio frequency power amplifier chip controls semiconductor laser.
Wherein, described drive circuit board adopts AVR Mega16 Single-chip Controlling.
The utility model beneficial technical effects is: drive circuit is simple more, good reliability and easy to operate, and only need connect with the mains and promptly can wear out, the ageing efficiency height, aging result is more accurate, more practical.
Description of drawings
Fig. 1 is the semiconductor laser ageing test control system structure chart of the utility model embodiment.
Fig. 2 is the crossing current control section circuit diagram of the utility model embodiment.
Fig. 3 is the temperature control part parallel circuit figure of the utility model embodiment.
Embodiment
Below in conjunction with drawings and Examples the utility model is elaborated.
The adjustable bias current that provides to laser, the monitoring of laser back facet current, the detection of the setting of laser works internal temperature and monitoring, laser peripheral environment mainly are provided the semiconductor laser ageing test control system of present embodiment.By changing laser works temperature and monitoring of environmental temperature to reach the quality verification of laser product, further verify the ability to work of laser, a plurality of have the drives plate of same design by the IIC interface communication, changeing USB by IIC again realizes communicating by letter with PC, reach the purpose of real-time monitoring by computer, so not only realized multichannel communication, and judged to reach the purpose of screening laser by software.
General control system as shown in Figure 1.The semiconductor laser ageing test control system of present embodiment is made up of at least one separate drive circuit board, and described drive circuit board is made up of crossing current control circuit and temperature-control circuit.
Described crossing current control circuit is composed as follows, and as Fig. 2: the normal phase input end of the first integrated operational amplifier U1A is set input voltage by port DCAcurrset, is connected with port LD by resistance R 3; The inverting input of the first one-tenth operational amplifier U1A is by resistance R 5 ground connection, and resistance R 8 is connected between the inverting input and output of the first one-tenth operational amplifier U1A with the parallel circuits that capacitor C 2 is formed; The output of the described first integrated operational amplifier U1A is connected with port LD with the parallel circuits that R7 forms by R6; The positive supply termination forward bias voltage of the first integrated operational amplifier U1A, and by capacitor C 1 ground connection; The negative power end ground connection of the first integrated operational amplifier U1A.
Described temperature-control circuit is composed as follows, and as Fig. 3: the normal phase input end of the second integrated operational amplifier U4A connects the 1.8V reference voltage by resistance R 11; The inverting input of the second integrated operational amplifier U4A is connected with port TempErr by resistance R 13, and the inverting input of the second integrated operational amplifier U4A is connected with the output of the second integrated operational amplifier U4A by capacitor C 6, resistance R 18 successively; The output of the second integrated operational amplifier U4A is connected with pin-IN of audio frequency power amplifier chip U3 by resistance R 14; The pin SHDN of audio frequency power amplifier chip U3 is connected with port TEC_SHDN; The pin BYPASS of audio frequency power amplifier chip U3 ,+IN imports identical forward voltage 1.8V; Pin-IN of audio frequency power amplifier chip U3 is connected with pin VD+ by resistance R 15, and pin VD+ is connected with port TEC-; The pin VDD of audio frequency power amplifier chip U3 adds forward bias voltage, and by capacitor C 7 ground connection; The pin GND ground connection of audio frequency power amplifier chip U3; The pin VD-of audio frequency power amplifier chip U3 is connected with port TEC+; The normal phase input end of the 3rd integrated operational amplifier U4B connects forward voltage by resistance R 21, and directly is connected with port RTH; The inverting input of the 3rd integrated operational amplifier U4B is connected with port DCATempctrl by resistance R 22, and the parallel circuits of forming by resistance R 24, capacitor C 10 is connected with the output of the 3rd integrated operational amplifier U4B; The output of the 3rd integrated operational amplifier U4B is connected with port TempErr; The positive supply termination forward bias voltage of the 3rd integrated operational amplifier U4B, and by capacitor C 9 ground connection; The negative power end ground connection of the 3rd integrated operational amplifier U4B.
Wherein, port DCAcurrset represents to provide the control voltage of constant current to laser, and it is exported by analog-digital chip; Port LD represents laser diode, port TEC_SHDN represents the switch of temperature-control circuit, control by the high-low level that one-chip machine port is directly exported, port DCATempctrl represents the control voltage of die temperature in the work of setting laser device, port TempErr represents the voltage deviation that the deviation of temperature converts in the temperature control circuit, it directly links to each other with R13 and constitutes the integration ratio circuit with the back circuit, port TEC-represents the negative terminal of laser internal refrigeration storage device, port TEC+ represents the anode of laser internal refrigeration storage device, and port RTH represents that laser inside is used to monitor the thermistor of die temperature.
Wherein, the parallel circuits ground connection that the normal phase input end of the described first integrated operational amplifier U1A is formed by resistance R 3, backward diode D1 and capacitor C 3 successively reaches the purpose of protecting laser diode.
Wherein, the positive supply termination forward bias voltage of the first integrated operational amplifier U1A, the second integrated operational amplifier U4A and the 3rd integrated operational amplifier U4B is 3.3V; The pin BYPASS of described audio frequency power amplifier chip U3 ,+IN and VDD input forward voltage is respectively 1.8V, 1.8V and 3.3V; The forward voltage that normal phase input end adds of the described second integrated operational amplifier U4A is 2.5V; Requiring the A/D of single chip machine controlling circuit part and the conversion accuracy of D/A conversion chip is 16, and the reference voltage of conversion chip is 3.0V.
Concrete: the system of present embodiment is made up of 16 drive circuit boards, and every drive plate is made up of crossing current control circuit and temperature-control circuit two parts of laser, respectively referring to Fig. 2 and Fig. 3.As shown in Figure 2; laser crossing current part directly adopts discharge circuit to realize; by MCU control D/A conversion; realized the adjusting of laser bias current by regulation voltage; degree of regulation reaches 0.1mA; adjustable range 0 is to 200mA, and realized protection to laser by backward diode and electric capacity, and design circuit is simple and reliable.Fig. 3 is the temperature control circuit design of laser, junction temperature by temperature-sensitive element monitoring laser, with the fiducial temperature of setting relatively after, by the PI integrating circuit, audio frequency power amplifier chip LM4871 realizes the automatic adjusting of temperature, by the refrigerating capacity of change semiconductor cooler, thereby keep laser under stationary temperature, to work all the time, guaranteed the stability of the various parameters of laser.The adjustment precision reaches 0.1 ℃, and temperature range is 15 ℃ to 40 ℃ scalable.Because the temperature control chip of the used laser in market all compares expensive, and maximum output current is at 1.5A.This place design features part is to adopt audio frequency power amplifier to realize laser temperature control, provide cost savings greatly, and increased the driving voltage of refrigerator in the laser, the differential voltage that actual use experience proof offers the TEC two ends can reach 3V, has effectively utilized the efficient of semiconductor cooler TEC.At work, laser is placed under 75 ℃ of hot environments, continuous operation 60 minutes, the actual current value size of detection TEC compares by software and established standards, and system judges the service behaviour of laser automatically, thereby laser is screened.Every drive circuit board adopts AVR Mega16 single-chip microcomputer to control, and this single-chip microcomputer has the IIC communication port, can communicate with main frame, has realized each parameter of laser is monitored in real time, to reach the defencive function to laser.
This system is succinctly practical, and cost is low, and the data when monitoring the laser operate as normal in real time, and the precision height.Effectively the low laser of screenability can be widely used in laser production firm, guarantees the outgoing of laser.
Claims (7)
1. a semiconductor laser ageing test control system is characterized in that, described control system is made up of at least one separate drive circuit board, and described drive circuit board is made up of crossing current control circuit and temperature-control circuit;
Described crossing current control circuit is composed as follows: the normal phase input end of the first integrated operational amplifier U1A is set input voltage by port DCAcurrset, is connected with port LD by resistance R 3; The inverting input of the first one-tenth operational amplifier U1A is by resistance R 5 ground connection, and resistance R 8 is connected between the inverting input and output of the first one-tenth operational amplifier U1A with the parallel circuits that capacitor C 2 is formed; The output of the described first integrated operational amplifier U1A is connected with port LD with the parallel circuits that R7 forms by R6; The positive supply termination forward bias voltage of the first integrated operational amplifier U1A, and by capacitor C 1 ground connection; The negative power end ground connection of the first integrated operational amplifier U1A;
Described temperature-control circuit is composed as follows: the normal phase input end of the second integrated operational amplifier U4A connects the 1.8V reference voltage by resistance R 11; The inverting input of the second integrated operational amplifier U4A is connected with port TempErr by resistance R 13, and the inverting input of the second integrated operational amplifier U4A is connected with the output of the second integrated operational amplifier U4A by capacitor C 6, resistance R 18 successively; The output of the second integrated operational amplifier U4A is connected with pin-IN of audio frequency power amplifier chip U3 by resistance R 14; The pin SHDN of audio frequency power amplifier chip U3 is connected with port TEC_SHDN; The pin BYPASS of audio frequency power amplifier chip U3 ,+IN imports identical forward voltage 1.8V; Pin-IN of audio frequency power amplifier chip U3 is connected with pin VD+ by resistance R 15, and pin VD+ is connected with port TEC-; The pin VDD of audio frequency power amplifier chip U3 adds forward bias voltage, and by capacitor C 7 ground connection; The pin GND ground connection of audio frequency power amplifier chip U3; The pin VD-of audio frequency power amplifier chip U3 is connected with port TEC+; The normal phase input end of the 3rd integrated operational amplifier U4B connects forward voltage by resistance R 21, and directly is connected with port RTH; The inverting input of the 3rd integrated operational amplifier U4B is connected with port DCATempctrl by resistance R 22, and the parallel circuits of forming by resistance R 24, capacitor C 10 is connected with the output of the 3rd integrated operational amplifier U4B; The output of the 3rd integrated operational amplifier U4B is connected with port TempErr; The positive supply termination forward bias voltage of the 3rd integrated operational amplifier U4B, and by capacitor C 9 ground connection; The negative power end ground connection of the 3rd integrated operational amplifier U4B;
Wherein, port DCAcurrset represents to provide the control voltage of constant current to laser, and it is exported by analog-digital chip; Port LD represents laser diode, port TEC_SHDN represents the switch of temperature-control circuit, control by the high-low level that one-chip machine port is directly exported, port DCATempctrl represents the control voltage of die temperature in the work of setting laser device, port TempErr represents the voltage deviation that the deviation of temperature converts in the temperature control circuit, it directly links to each other with R13 and constitutes the integration ratio circuit with the back circuit, port TEC-represents the negative terminal of laser internal refrigeration storage device, port TEC+ represents the anode of laser internal refrigeration storage device, and port RTH represents that laser inside is used to monitor the thermistor of die temperature.
2. semiconductor laser ageing test control system according to claim 1 is characterized in that, the parallel circuits ground connection that the normal phase input end of the described first integrated operational amplifier U1A is formed by resistance R 3, backward diode D1 and capacitor C 3 successively.
3. semiconductor laser ageing test control system according to claim 1, it is characterized in that the positive supply termination forward bias voltage of the first integrated operational amplifier U1A, the second integrated operational amplifier U4A and the 3rd integrated operational amplifier U4B is 3.3V; The pin BYPASS of described audio frequency power amplifier chip U3 ,+IN and VDD input forward voltage is respectively 1.8V, 1.8V and 3.3V; The forward voltage that normal phase input end adds of the described second integrated operational amplifier U4A is 2.5V; Requiring the A/D of single chip machine controlling circuit part and the conversion accuracy of D/A conversion chip is 16, and the reference voltage of conversion chip is 3.0V.
4. semiconductor laser ageing test control system according to claim 1 is characterized in that described drive circuit board is provided with the IIC communication port.
5. semiconductor laser ageing test control system according to claim 4 is characterized in that, described IIC communication port is connected with PC by USB interface.
6. according to the described semiconductor laser ageing test control system of claim 1, it is characterized in that, adopt the refrigerator of audio frequency power amplifier chip controls semiconductor laser.
7. semiconductor laser ageing test control system according to claim 1 is characterized in that, described drive circuit board adopts AVR Mega16 Single-chip Controlling.
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| CN 201020590842 CN201853943U (en) | 2010-11-04 | 2010-11-04 | Aging test control system for semiconductor lasers |
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| CN 201020590842 CN201853943U (en) | 2010-11-04 | 2010-11-04 | Aging test control system for semiconductor lasers |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102353862A (en) * | 2011-08-26 | 2012-02-15 | 成都因纳伟盛科技股份有限公司 | Batch aging tooling system for information decryption module of second-generation ID (Identification) card reader |
| CN104596738A (en) * | 2015-01-04 | 2015-05-06 | 武汉电信器件有限公司 | Digital type ageing equipment of laser device |
| CN104914373A (en) * | 2015-06-15 | 2015-09-16 | 工业和信息化部电子第五研究所 | SLD device reliability evaluation method |
| CN106324469A (en) * | 2016-09-30 | 2017-01-11 | 深圳新飞通光电子技术有限公司 | Multiplex PIV (peak inverse voltage) testing system suitable for optical transmitter module and testing method of multiplex PIV testing system |
| CN107219385A (en) * | 2017-04-20 | 2017-09-29 | 深圳市杰普特光电股份有限公司 | Signal generation apparatus |
| CN111816430A (en) * | 2019-04-09 | 2020-10-23 | 罗伯特·博世有限公司 | Power component and transformer device for resistance welding |
| CN111934186A (en) * | 2020-08-06 | 2020-11-13 | 西安立芯光电科技有限公司 | Method for judging optical catastrophe type of semiconductor laser chip |
| CN117014066A (en) * | 2023-09-27 | 2023-11-07 | 成都明夷电子科技有限公司 | Laser screening method, screening device, electronic equipment and storage medium |
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2010
- 2010-11-04 CN CN 201020590842 patent/CN201853943U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102353862A (en) * | 2011-08-26 | 2012-02-15 | 成都因纳伟盛科技股份有限公司 | Batch aging tooling system for information decryption module of second-generation ID (Identification) card reader |
| CN102353862B (en) * | 2011-08-26 | 2013-05-22 | 成都因纳伟盛科技股份有限公司 | Batch aging tooling system for information decryption module of second-generation ID (Identification) card reader |
| CN104596738A (en) * | 2015-01-04 | 2015-05-06 | 武汉电信器件有限公司 | Digital type ageing equipment of laser device |
| CN104914373A (en) * | 2015-06-15 | 2015-09-16 | 工业和信息化部电子第五研究所 | SLD device reliability evaluation method |
| CN104914373B (en) * | 2015-06-15 | 2017-10-20 | 工业和信息化部电子第五研究所 | SLD device reliability appraisal procedures |
| CN106324469A (en) * | 2016-09-30 | 2017-01-11 | 深圳新飞通光电子技术有限公司 | Multiplex PIV (peak inverse voltage) testing system suitable for optical transmitter module and testing method of multiplex PIV testing system |
| CN107219385A (en) * | 2017-04-20 | 2017-09-29 | 深圳市杰普特光电股份有限公司 | Signal generation apparatus |
| CN111816430A (en) * | 2019-04-09 | 2020-10-23 | 罗伯特·博世有限公司 | Power component and transformer device for resistance welding |
| CN111934186A (en) * | 2020-08-06 | 2020-11-13 | 西安立芯光电科技有限公司 | Method for judging optical catastrophe type of semiconductor laser chip |
| CN111934186B (en) * | 2020-08-06 | 2021-06-15 | 西安立芯光电科技有限公司 | Method for judging optical catastrophe type of semiconductor laser chip |
| CN117014066A (en) * | 2023-09-27 | 2023-11-07 | 成都明夷电子科技有限公司 | Laser screening method, screening device, electronic equipment and storage medium |
| CN117014066B (en) * | 2023-09-27 | 2023-12-05 | 成都明夷电子科技有限公司 | Laser screening method, screening device, electronic equipment and storage medium |
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Granted publication date: 20110601 Termination date: 20131104 |