CN108303858A - A kind of maskless lithography system and its exposure method - Google Patents

A kind of maskless lithography system and its exposure method Download PDF

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Publication number
CN108303858A
CN108303858A CN201810193094.7A CN201810193094A CN108303858A CN 108303858 A CN108303858 A CN 108303858A CN 201810193094 A CN201810193094 A CN 201810193094A CN 108303858 A CN108303858 A CN 108303858A
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CN
China
Prior art keywords
piece
carrying platform
article carrying
maskless
substrate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810193094.7A
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Chinese (zh)
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CN108303858B (en
Inventor
阮立锋
杨三
汪孝军
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ZHONGSHAN AISCENT TECHNOLOGIES Co Ltd
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ZHONGSHAN AISCENT TECHNOLOGIES Co Ltd
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Priority to CN201810193094.7A priority Critical patent/CN108303858B/en
Priority to PCT/CN2018/086446 priority patent/WO2019169733A1/en
Publication of CN108303858A publication Critical patent/CN108303858A/en
Application granted granted Critical
Publication of CN108303858B publication Critical patent/CN108303858B/en
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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2057Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70283Mask effects on the imaging process
    • G03F7/70291Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70758Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026Focusing

Abstract

The invention discloses a kind of maskless lithography system and its exposure methods.The system includes:Two-dimentional article carrying platform, two-dimentional article carrying platform is for placing sensitive substrate/piece to be exposed;Maskless exposure device comprising spatial light modulator and lens assembly, lens assembly are located between spatial light modulator and sensitive substrate/piece;Two-dimentional article carrying platform motion detection apparatus;Synchronous motion control device, it controls two-dimentional article carrying platform along scanning motion direction uniform motion is preset and the two dimensional motion information based on two-dimentional article carrying platform controls spatial light modulator on-off action, it would be desirable to which the figure of exposure is divided into a plurality of wide figure and carries out multiple exposure;And switching device.The present invention can expose the different patterns finely required in sensitive substrate/on piece, to reduce the cost of manufacture for being directed to various different accuracy mask plates, and can improve the producing efficiency of mask plate without using the film.

Description

A kind of maskless lithography system and its exposure method
Technical field
The present invention relates to maskless photoetching technology fields, more particularly to a kind of maskless lithography system and its exposure side Method.
Background technology
Compared to mask lithography technology, in high-precision HDI, (high density interconnects maskless photoetching technology, High Density Interconnector multilayer circuit board field, field of flat panel displays and integrated antenna package field), can save costliness Mask plate, directly by Computer Design generate required line pattern be exposed on the moving substrate for being coated with photosensitive layer, meet The requirement of multilayer plate high precision interconnection.Spatial light modulator (SLM, Special Light in mask-free photolithography system Modulator include) independently addressable and control a pel array, each pixel can be to transmission, reflection or diffraction Light generation includes the modulation of phase, gray scale direction or on off state.
Spatial light modulator includes DMD (Digitalmicromirrordevice, Digital Micromirror Device) or LCD (Liquid Crystal Display, liquid crystal display), spatial light modulator is substantially to the modulation of each pixel grey scale Modulation to the output light intensity of each pixel unit.Such as:DMD is the rectangular micromirrors array being made of many micro mirror minute surfaces, Maskless lithography system uses the laser irradiation DMD of specific frequency, by controlling the rotation angle of micro mirror, with by modulating each picture Specific circuit image is projected to and is coated on the moving substrate of photosensitive layer by the output light intensity of plain unit.
The circuit line width that mask-free photolithography system in the prior art makes only up to accomplish 15um or so, much The requirement currently on the market for mask plate cannot be met.In addition to this, although mask-free photolithography system in the prior art Through high speed photoetching scanning may be implemented, but in the case that high-precision, splicing difficulty is larger, and reason mainly has:
On the one hand, mask-free photolithography system in the prior art it is difficult to ensure that every exposure figure all in focus because High-precision figure just can guarantee two exposures when the general very little of depth of focus (within ± 10um), only graph exposure in focus Figure in the place of splicing, line weight is consistent, and to ensure figure in focus, just has to use range sensor.Separately On the one hand, there is high-precision mobile platform, it is ensured that platform moves repeatable accuracy within 1um, just can guarantee adjacent two Figure can be stitched together.
Thus, it is desirable to have a kind of technical solution come overcome or at least mitigate in the drawbacks described above of the prior art at least one It is a.
Invention content
It is existing to overcome or at least mitigate that the purpose of the present invention is to provide a kind of maskless lithography systems and its exposure method There is at least one of the drawbacks described above of technology.
To achieve the above object, the present invention provides a kind of maskless lithography system, and the maskless lithography system includes:Two Article carrying platform is tieed up, the two dimension article carrying platform is for placing sensitive substrate/piece to be exposed, and the sensitive substrate/piece is with opposite It is set to the two-dimentional article carrying platform in the fixed mode of two-dimentional article carrying platform;Maskless exposure device, the maskless exposure dress It sets including DMD and lens assembly, the lens assembly is located between the DMD and the sensitive substrate/piece, for changing described The pixel resolution for the shadow image that DMD is projected realizes the exposure of different line width line-spacing images;The lens assembly includes The different telecentric lens of multiple enlargement ratios;Axial spacing detection device, the axial spacing detection device are described for detecting Axial spacing information between maskless exposure device and the sensitive substrate/piece on the optical axis, and export;Axial spacing Adjusting apparatus, the axial spacing adjusting apparatus are used to be based on the axial spacing information, control the maskless exposure device The axis movement makes the photosensitive surface of the sensitive substrate/piece be maintained at the focal plane of the maskless exposure device;Two dimension Article carrying platform motion detection apparatus, the two dimension article carrying platform motion detection apparatus are hanging down for detecting the two-dimentional article carrying platform Directly in the two dimensional motion information in the plane of the optical axis;Synchronous motion control device, the Synchronous motion control device are used for It controls the two-dimentional article carrying platform edge and presets scanning motion direction uniform motion and two maintenance and operations based on the two-dimentional article carrying platform Dynamic information controls the rotary movement of each micro mirror of the DMD, it would be desirable to which the figure of exposure, which is divided into a plurality of wide figure, to carry out Multiple exposure;And the switching device for being switched to for use telecentric lens on the optical axis.
Further, the telecentric lens are high magnification telecentric lens, low range telecentric lens;The switching device packet It includes:Fixed moving substrate, the fixed moving substrate are fixed between the lens assembly and the sensitive substrate/piece; Moving substrate, the moving substrate upper edge sequentially arrange each telecentric lens on the direction of the optical axis;And driving Equipment, the driving equipment are located between the moving substrate and the fixed moving substrate, and the moving substrate passes through described Driving equipment is slidably connected to the fixed moving substrate.
Further, the fixed moving substrate is set along the guide rail arranged perpendicular to the direction of the optical axis;The movement Substrate sets the sliding block that can be moved along the guide rail;The driving equipment includes cylinder, and described cylinder one end is fixedly attached to described Fixed moving substrate, the other end are fixedly attached to the moving substrate.
Further, the switching device further includes:Two locating parts, two locating part are respectively provided at described fixed mobile The telecentric lens are aligned the optical axis by the predeterminated position of substrate both sides for fixing the moving substrate.
Further, the axial spacing detection device includes:Contactless range sensor, the contactless distance Sensor is used to detect the axial spacing information between the maskless exposure device and the sensitive substrate/piece, and exports and give The axial spacing adjusting apparatus;Optical path direction adjustment element, the optical path direction adjustment element are located at the maskless exposure Between the light-emitting window of device and the light inlet of the contactless range sensor, it is used for the contactless range sensor Light path be adjusted on the optical axis.
Further, the optical path direction adjustment element includes reflecting prism;The contactless range sensor arrangement In the side of the lens assembly, the reflecting prism is located between the lens assembly and sensitive substrate/piece;It is described non-contact The laser that formula range sensor is sent out projects the photosensitive table of the sensitive substrate/piece via the reflection light that reflecting prism reflects Face, and the reflection light is located on the optical axis.
Further, the two-dimentional article carrying platform is located at by pneumatically supported mode on fixed pedestal.
The present invention also provides a kind of exposure method of maskless lithography system, the exposure methods of the maskless lithography system Include the following steps:Be arranged include two-dimentional article carrying platform, maskless exposure device and switching device maskless lithography system, should Maskless exposure device includes the DMD telecentric lens different with multiple enlargement ratios;By sensitive substrate/piece to be exposed with opposite It is set to two-dimentional article carrying platform in the fixed mode of two-dimentional article carrying platform;The line width line of the production circuit of the product exposed as needed Away from size, the telecentric lens of suitable multiplying power are switched on optical axis by switching device;Detect maskless exposure device with it is photosensitive Axial spacing information between substrate/piece on optical axis;Based on the axial spacing information detected, maskless exposure device is controlled Along axis movement, the photosensitive surface of sensitive substrate/piece is made to be maintained at the focal plane of the maskless exposure device;Control two dimension carries Object platform is micro- along presetting scanning motion direction uniform motion and controlling each of DMD per a line on default scanning motion direction Mirror is sequentially spaced the identical unit interval, and respectively angle of rotation, the unit interval are that the sensitive substrate/piece moves one Micro mirror is apart from the required time.
Further, the exposure method of the maskless lithography system further includes:Telecentric lens and sensitive substrate/piece it Between set reflecting prism;In the contactless range sensor of the side arrangement of telecentric lens, contactless range sensor is made to send out Laser the photosensitive surface of sensitive substrate/piece is projected via the reflection light that reflecting prism reflects, and reflection light is located at light On axis.
The present invention can expose the different figures finely required without using the film in sensitive substrate/on piece Case to reduce the cost of manufacture for being directed to various different accuracy mask plates, and can improve the producing efficiency of mask plate.
Description of the drawings
Fig. 1 is the principle schematic diagram of one embodiment of maskless lithography system provided by the present invention.
Fig. 2 is the structural schematic diagram of one embodiment of maskless lithography system provided by the present invention.
Fig. 3 is the working state schematic representation of the low power telecentric lens of maskless lithography system in Fig. 1.
Fig. 4 is the working state schematic representation of the high power telecentric lens of maskless lithography system in Fig. 1.
Fig. 5 is the principle schematic diagram of the axial spacing detection device of maskless lithography system in Fig. 1.
Fig. 6 is the structural schematic diagram of one embodiment of switching device of maskless lithography system in Fig. 1.
Reference numeral:
Specific implementation mode
In the accompanying drawings, it indicates same or similar element using same or similar label or there is same or like function Element.The embodiment of the present invention is described in detail below in conjunction with the accompanying drawings.
In the description of the present invention, term "center", " longitudinal direction ", " transverse direction ", "front", "rear", "left", "right", "vertical", The orientation or positional relationship of the instructions such as "horizontal", "top", "bottom" "inner", "outside" is that orientation based on ... shown in the drawings or position are closed System, is merely for convenience of description of the present invention and simplification of the description, not indicating or implying the indicated device or element must have Specific orientation, with specific azimuth configuration and operation, therefore should not be understood as limiting the scope of the invention.
As shown in Figure 1, the maskless lithography system that the present embodiment is provided includes sensitive substrate/piece 2, two-dimentional article carrying platform 3, maskless exposure device 1, axial spacing detection device 4, axial spacing adjusting apparatus 5, two-dimentional article carrying platform motion detection dress 8, Synchronous motion control device 6 and switching device 7 are set, wherein:
Sensitive substrate/piece 2 to be exposed is placed on two-dimentional article carrying platform 3, and sensitive substrate/piece 2 is with relative to two-dimentional loading 3 fixed mode of platform is set to two-dimentional article carrying platform 3.
Maskless exposure device 1 includes lens assembly and spatial light modulator, wherein:The lens assembly is located at true sky Between between optical modulator and sensitive substrate/piece 2, for changing the pixel for the shadow image that the spatial light modulator projects Resolution ratio realizes the exposure of different line width line-spacing images.
The lens assembly includes the different telecentric lens of multiple enlargement ratios, can will be for use using switching device 7 The telecentric lens are switched on optical axis 110.The selection principle of the enlargement ratio of telecentric lens can be understood as:
According to product to be exposed to the size requirements of the line width line-spacing of production circuit, such as:Product to be exposed is to life The line width line-spacing on producing line road requires finely then to need using the relatively high telecentric lens of enlargement ratio, i.e., mentioned in this article High magnification telecentric lens 15;Conversely, using the relatively low telecentric lens of enlargement ratio, i.e., low range mentioned in this article Telecentric lens 16.Telecentric lens mentioned below refer to high magnification telecentric lens 15 or low range telecentric lens 16.
Under normal conditions, the enlargement ratio range of high magnification telecentric lens 15 is limited to (3:1 to 5:1) low in the range of The enlargement ratio range of multiplying power telecentric lens 16 is limited to (1.8:1 to 1:1) in the range of.In actual use, it produces The line width line-spacing of circuit uses low range telecentric lens 16 when being more than 7um, utilizes low range telecentric lens 16, it is possible to reduce The time of exposure improves the efficiency of exposure.When producing the line width line-spacing of circuit more than 2um, low range telecentric mirror can be both used First 16, high magnification telecentric lens 15 can also be used, then can require to select according to fine.Switching uses high magnification telecentric lens 15, the precision of exposure can be improved, 16 irrealizable exposure accuracy of low range telecentric lens is completed.Therefore, the present embodiment can Without using the film, to expose the different patterns finely required on sensitive substrate/piece 2, to reduce needle To the cost of manufacture of various different accuracy mask plates, and the producing efficiency of mask plate can be improved.
DMD11 shown in figure may be used in spatial light modulator, but not limited to this, LCD can also be used.Below with sky Between optical modulator using for DMD, illustrate the operation principle of the maskless lithography system of the present embodiment.DMD is the one of photoswitch Kind, the on-off action of photoswitch is realized using rotating mirror.
The lens assembly, the micro mirror battle array that DMD11 is made of many micro mirror minute surfaces are set between DMD11 and sensitive substrate/piece 2 Row, as shown in Figure 3 and Figure 4, light source 14 is laser light source, exports the laser of fixed wave length, which passes through bundling optical fiber 12 Conduction after the uniformity of laser is adjusted via dodging device 13, passes through one group of scintilloscope (not shown) to dodging device 13 It projects on DMD11, DMD11 will need the pattern projection exposed to get off, and the shadow of imaging is made to enter the lens assembly In the telecentric lens for the enlargement ratio selected.Change the picture for the shadow image that DMD11 is projected using the telecentric lens Plain resolution ratio realizes the exposure of different line width line-spacing images.The maskless lithography system that the present embodiment is provided can will need The figure of exposure is directly exposed on sensitive substrate/piece 2, without using the film.
Axial spacing detection device 4 is for detecting between the maskless exposure device 1 and sensitive substrate/piece 2 in optical axis Axial spacing information on 110, and export.The axial spacing information is substantially end face and the sense at the light extraction end of telecentric lens Axial spacing information between photopolymer substrate/piece 2." the axial spacing information " referred in text refer to along 110 direction of optical axis away from From information.The optical axis that " optical axis 110 " can be understood as maskless exposure device 1 refers specifically to the optical axis of DMD11 or selectes Telecentric lens be positioned over after the downstream of DMD11, the optical axis of telecentric lens." downstream " is then the exit direction with optical path direction On the basis of.Such as:Bundling optical fiber 12 and dodging device 13 are located at the upstream of DMD11, and the lens assembly is located under DMD11 Trip.
As shown in figure 5, in one embodiment, axial spacing detection device 4 includes 41 He of contactless range sensor Optical path direction adjustment element 42, wherein contactless range sensor 41 is for detecting maskless exposure device 1 and photosensitive base Axial spacing information between plate/piece 2, and export to axial spacing adjusting apparatus 5.Contactless range sensor 41 can be adopted With the products such as model Keyemce LK-H150+LK-F2, LK-H080+LK-F3, LK-H052K on the market.Optical path direction adjustment member Part 42 is located between the light-emitting window of maskless exposure device 1 and the light inlet of contactless range sensor 41, for being connect non- The light path of touch range sensor 41 is adjusted on optical axis 110.
In one embodiment, optical path direction adjustment element 42 includes reflecting prism.41 cloth of contactless range sensor It sets in the side of the lens assembly, the reflecting prism is located between the lens assembly and sensitive substrate/piece 2.It is non-contact The laser that formula range sensor 41 is sent out projects the photosensitive table of sensitive substrate/piece 2 via the reflection light that reflecting prism reflects Face, and the reflection light is located on optical axis 110.
Axial spacing adjusting apparatus 5 is used to be based on the axial spacing information, and control maskless exposure device 1 is along optical axis 110 movements, make the photosensitive surface of sensitive substrate/piece 2 be maintained at the focal plane of maskless exposure device 1.Operation principle:Maskless Exposure device 1 can be along 110 direction free movement of optical axis, and contactless range sensor 41 is mounted on maskless exposure device On 1, maskless exposure device 1 can be measured in real time at a distance from sensitive substrate/piece 2, and measurement distance can be fed back to control system It unites (such as servo-control system, be not shown in figure), control system controls maskless exposure device 1 along 110 direction of optical axis again Movement, to ensure the axial spacing between maskless exposure device 1 and sensitive substrate/piece 2 within a preset range.
It should be noted that axial spacing detection device 4 and axial spacing adjusting apparatus 5 can form an automatic focusing System, contactless range sensor 41 use red laser light source measurement distance, are mounted on the side of telecentric lens, reflect rib Mirror is mounted below telecentric lens, and the optical axis 110 with telecentric lens is coaxial, when installation make the optical axises 110 of telecentric lens with it is non- The light path 410 of contact range sensor 41 overlaps, may be implemented to measure in real time in this way telecentric lens center to sensitive substrate/ Axial spacing information between piece 2, the distance measured by control system and contactless range sensor 41 are formed One closed-loop feedback mechanism, to ensure that the focal plane of telecentric lens remains unchanged during exposing surface sweeping.
Two-dimentional article carrying platform motion detection apparatus 8 is for detecting two-dimentional article carrying platform 3 in the plane perpendicular to optical axis 110 Two dimensional motion information, usual two dimensional motion include X-direction and Y-direction movement, which is mutually perpendicular to.Synchronous motion control Device 6 is for controlling two-dimentional article carrying platform 3 along default scanning motion direction uniform motion and the two dimension based on two-dimentional article carrying platform 3 The on-off action of movable information synchronous control spatial light modulator, i.e. each micro mirror of synchronous control DMD11 are according to time elder generation The rotary movement of sequence afterwards, it would be desirable to which the figure of exposure is divided into a plurality of wide figure and carries out multiple exposure.
As shown in Figures 2 to 4, in one embodiment, switching device 7 includes fixed substrate 71, moving substrate 72 and drives Dynamic equipment 75, fixed substrate 71 are fixed between the lens assembly and sensitive substrate/piece 2.72 upper edge of moving substrate is hung down Directly in sequentially arranging each telecentric lens on the direction of the optical axis 110.Driving equipment 75 is located at moving substrate 72 and fixes Between substrate 71, moving substrate 72 is slidably connected to fixed substrate 71 by the driving equipment.Telecentric lens are fixed on On moving substrate 72.
As shown in fig. 6, in one embodiment, fixed substrate 71 is set along the guide rail arranged perpendicular to the direction of optical axis 110 74.Moving substrate 72 is set can be along the sliding block 76 that guide rail 74 moves.Driving equipment 75 includes cylinder 751, and 751 one end of cylinder, which is fixed, to be connected It is connected to fixed substrate 71, the other end is fixedly attached to moving substrate 72.By controlling the unlatching and closing of cylinder 751, to push away Dynamic moving substrate 72 moves, to achieve the purpose that switch telecentric lens.
In one embodiment, switching device 7 further includes two locating parts 73, and two locating parts 73 are respectively provided at fixed substrate two The predeterminated position of side is used for fixed substrate, by telecentric lens optical axis alignment 110.Need using low range telecentric lens 16 into Constantly, driving equipment 75 shifts moving substrate 72 onto left side for row exposure, and the locating part 73 in left side is relied on to fix low range telecentricity Camera lens 16, the optical axis for making low range telecentric lens 16 are overlapped with the optical axis 110 of DMD11;Similarly, high magnification telecentric lens are being used 15 when being exposed, and driving equipment 75 shifts moving substrate 72 onto right side, and it is remote to rely on the locating part 73 on right side to fix high magnification Heart camera lens 15, the optical axis for making high magnification telecentric lens 15 are overlapped with the optical axis 110 of DMD11, realize 16 He of low range telecentric lens The switching of high magnification telecentric lens 15.In order to express easily, " left side " " right side " description switching device 7 shown in figure is used herein Operation principle.
In one embodiment, two-dimentional article carrying platform 3 is located at by pneumatically supported mode on fixed pedestal.It can be real to reach Existing high-precision pattern reduces the resistance in 3 motion process of two-dimentional article carrying platform using pneumatically supported mode, improves two-dimentional loading The kinematic accuracy of platform 3, this is advantageously implemented accurately pattern splicing.
The present embodiment also provides a kind of exposure method of maskless lithography system, the exposure side of the maskless lithography system Method includes the following steps:
Be arranged include two-dimentional article carrying platform 3, maskless exposure device 1 and switching device 7 maskless lithography system, the nothing Mask exposure device 1 includes the DMD11 telecentric lens different with multiple enlargement ratios.Specifically, high magnification telecentric lens 15 Enlargement ratio range is limited to (3:1 to 5:1) in the range of, the enlargement ratio range of low range telecentric lens 16 is limited to (1.8:1 to 1:1) in the range of.
By sensitive substrate/piece 2 to be exposed by relative to two-dimentional article carrying platform 3 it is fixed in a manner of be set to two-dimentional article carrying platform 3。
The line width size of the production circuit of the product exposed as needed, by switching device 7 by the telecentricity of suitable multiplying power On Shot change to optical axis 110.The selection principle of the enlargement ratio of telecentric lens can be understood as:According to product pair to be exposed The size requirements of the line width line-spacing of circuit are produced, such as:Product to be exposed requires finely, then the line width line-spacing for producing circuit It needs using the relatively high telecentric lens of enlargement ratio, i.e., high magnification telecentric lens 15 mentioned in this article;Conversely, using putting The relatively low telecentric lens of big multiplying power, i.e., low range telecentric lens 16 mentioned in this article.
Detect the axial spacing information on optical axis 110 between maskless exposure device 1 and sensitive substrate/piece 2.Based on inspection The axial spacing information measured, control maskless exposure device 1 are moved along optical axis 110, make the photosensitive surface of sensitive substrate/piece 2 It is maintained at the focal plane of maskless exposure device 1, can ensure that the focal plane of telecentric lens is kept during exposing surface sweeping in this way It is constant.
Two dimension of the two-dimentional article carrying platform 3 of control along default scanning motion direction uniform motion and based on two-dimentional article carrying platform 3 Each micro mirror of movable information synchronous control DMD11 per a line on default scanning motion direction is sequentially spaced identical unit A time each angle of rotation, the unit interval are that the sensitive substrate/piece 2 moves a micro mirror apart from the required time, The figure exposed will be needed to be divided into a plurality of wide figure and carry out multiple exposure.
In one embodiment, the exposure method of the maskless lithography system further includes:
Reflecting prism is set between telecentric lens and sensitive substrate/piece 2;
In the contactless range sensor 41 of the side arrangement of telecentric lens, contactless range sensor 41 is made to send out Laser projects the photosensitive surface of sensitive substrate/piece 2 via the reflection light that reflecting prism reflects, and reflection light is located at optical axis On 110.Axial spacing detection device 4 and axial spacing adjusting apparatus 5 can form an autofocus system, it is contactless away from Red laser light source measurement distance is used from sensor 41, is mounted on the side of telecentric lens, reflecting prism is mounted on telecentric mirror Below head, the optical axis 110 with telecentric lens is coaxial, and when installation makes the optical axis 110 of telecentric lens and contactless Distance-sensing The light path 410 of device 41 overlaps, and may be implemented to measure telecentric lens center so in real time to the axial direction between sensitive substrate/piece 2 Pitch information, the distance measured by control system and contactless range sensor 41 form a closed loop feedback machine System, to ensure that the focal plane of telecentric lens remains unchanged during exposing surface sweeping.
It is last it is to be noted that:The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations.This The those of ordinary skill in field should understand that:It can be with technical scheme described in the above embodiments is modified or right Which part technical characteristic carries out equivalent replacement;These modifications or replacements, it does not separate the essence of the corresponding technical solution originally Invent the spirit and scope of each embodiment technical solution.

Claims (9)

1. a kind of maskless lithography system, which is characterized in that including:
Two-dimentional article carrying platform (3), the two dimension article carrying platform (3) is for placing sensitive substrate/piece (2) to be exposed, the sense Photopolymer substrate/piece (2) by relative to two-dimentional article carrying platform (3) it is fixed in a manner of be set to the two-dimentional article carrying platform (3);
Maskless exposure device (1), the maskless exposure device (1) include DMD (11) and lens assembly, the lens assembly It is located between the DMD (11) and the sensitive substrate/piece (2), the shadow image projected for changing the DMD (11) Pixel resolution, realize the exposure of different line width line-spacing images;The lens assembly includes different remote of multiple enlargement ratios Heart camera lens;
Axial spacing detection device (4), the axial spacing detection device (4) is for detecting the maskless exposure device (1) Axial spacing information between the sensitive substrate/piece (2) on the optical axis (110), and export;
Axial spacing adjusting apparatus (5), the axial spacing adjusting apparatus (5) are used to be based on the axial spacing information, control The maskless exposure device (1) moves along the optical axis (110), and the photosensitive surface of the sensitive substrate/piece (2) is made to be maintained at The focal plane of the maskless exposure device (1);
Two-dimentional article carrying platform motion detection apparatus (8), the two dimension article carrying platform motion detection apparatus (8) is for detecting described two Tie up two dimensional motion information of the article carrying platform (3) in the plane perpendicular to the optical axis (110);
Synchronous motion control device (6), the Synchronous motion control device (6) is for controlling described two-dimentional article carrying platform (3) edge Default scanning motion direction uniform motion and the two dimensional motion information for being based on the two-dimentional article carrying platform (3) control the DMD (11) rotary movement of each micro mirror, it would be desirable to which the figure of exposure is divided into a plurality of wide figure and carries out multiple exposure;And
Switching device (7) for being switched to for use telecentric lens on the optical axis (110).
2. maskless lithography system as described in claim 1, which is characterized in that the telecentric lens are high magnification telecentric lens (15), low range telecentric lens (16);
The switching device (7) includes:
Fixed moving substrate (71), the fixed moving substrate (71) are fixed at the lens assembly and the photosensitive base Between plate/piece (2);
Moving substrate (72), moving substrate (72) upper edge sequentially arrange each institute on the direction of the optical axis (110) State telecentric lens;With
Driving equipment (75), the driving equipment (75) be located at the moving substrate (72) and the fixed moving substrate (71) it Between, the moving substrate (72) is slidably connected to the fixed moving substrate (71) by the driving equipment.
3. maskless lithography system as claimed in claim 2, which is characterized in that the fixed moving substrate (71) sets along vertical In the guide rail (74) that the direction of the optical axis (110) is arranged;
The moving substrate (72) sets the sliding block (76) that can be moved along the guide rail (74);
The driving equipment (75) includes cylinder (751), and described cylinder (751) one end is fixedly attached to the fixed moving substrate (71), the other end is fixedly attached to the moving substrate (72).
4. maskless lithography system as claimed in claim 3, which is characterized in that the switching device (7) further includes:
Two locating parts (73), two locating part (73) are respectively provided at the predeterminated position of fixed moving substrate (71) both sides, For fixing the moving substrate (72), the telecentric lens are aligned the optical axis (110).
5. maskless lithography system according to any one of claims 1 to 4, which is characterized in that the axial spacing detection Device (4) includes:
Contactless range sensor (41), the contactless range sensor (41) is for detecting the maskless exposure dress The axial spacing information between (1) and the sensitive substrate/piece (2) is set, and is exported to the axial spacing adjusting apparatus (5);
Optical path direction adjustment element (42), the optical path direction adjustment element (42) are located at the maskless exposure device (1) Between light-emitting window and the light inlet of the contactless range sensor (41), it is used for the contactless range sensor (41) light path is adjusted on the optical axis (110).
6. maskless lithography system as claimed in claim 5, which is characterized in that the optical path direction adjustment element (42) includes Reflecting prism;
The contactless range sensor (41) is arranged in the side of the lens assembly, and the reflecting prism is located at the mirror Between head assembly and sensitive substrate/piece (2);
The laser that the contactless range sensor (41) sends out projects described via the reflection light that reflecting prism reflects The photosensitive surface of sensitive substrate/piece (2), and the reflection light is located on the optical axis (110).
7. maskless lithography system as described in claim 1, which is characterized in that the two dimension article carrying platform (3) passes through air supporting Mode be located on fixed pedestal.
8. a kind of exposure method of maskless lithography system, which is characterized in that include the following steps:
Be arranged include two-dimentional article carrying platform (3), maskless exposure device (1) and switching device (7) maskless lithography system, this Maskless exposure device (1) includes DMD (11) telecentric lens different with multiple enlargement ratios;
By sensitive substrate/piece (2) to be exposed by relative to two-dimentional article carrying platform (3) it is fixed in a manner of be set to two-dimentional article carrying platform (3);
The line width line-spacing size of the production circuit of the product exposed as needed, by switching device (7) by the remote of suitable multiplying power On heart Shot change to optical axis (110);
Detect the axial spacing information on optical axis (110) between maskless exposure device (1) and sensitive substrate/piece (2);
Based on the axial spacing information detected, control maskless exposure device (1) is moved along optical axis (110), make sensitive substrate/ The photosensitive surface of piece (2) is maintained at the focal plane of the maskless exposure device (1);
The two-dimentional article carrying platform (3) of control is along default scanning motion direction uniform motion and control DMD (11) in default scanning motion Each micro mirror on direction per a line is sequentially spaced angle of each rotation of identical unit interval, and the unit interval is institute The mobile micro mirror of sensitive substrate/piece (2) is stated apart from the required time.
9. the exposure method of maskless lithography system as claimed in claim 6, which is characterized in that further include:
Reflecting prism is set between telecentric lens and sensitive substrate/piece (2);
In the contactless range sensor of the side arrangement of telecentric lens (41), contactless range sensor (41) is made to send out Laser projects the photosensitive surface of sensitive substrate/piece (2) via the reflection light that reflecting prism reflects, and reflection light is located at light On axis (110).
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Denomination of invention: Maskless lithography system and exposure method therefor

Effective date of registration: 20200507

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Pledgee: Zhongshan branch of Dongguan Bank Co., Ltd

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