CN108303858B - A kind of maskless lithography system and its exposure method - Google Patents
A kind of maskless lithography system and its exposure method Download PDFInfo
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- CN108303858B CN108303858B CN201810193094.7A CN201810193094A CN108303858B CN 108303858 B CN108303858 B CN 108303858B CN 201810193094 A CN201810193094 A CN 201810193094A CN 108303858 B CN108303858 B CN 108303858B
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- piece
- carrying platform
- telecentric lens
- article carrying
- maskless
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
Abstract
The invention discloses a kind of maskless lithography system and its exposure methods.The system includes: two-dimentional article carrying platform, and two-dimentional article carrying platform is for placing sensitive substrate/piece to be exposed；Maskless exposure device comprising spatial light modulator and lens assembly, lens assembly are located between spatial light modulator and sensitive substrate/piece；Two-dimentional article carrying platform motion detection apparatus；Synchronous motion control device, it controls two-dimentional article carrying platform along scanning motion direction uniform motion is preset and the two dimensional motion information based on two-dimentional article carrying platform controls spatial light modulator on-off action, and the figure exposed will be needed to be divided into a plurality of wide figure and carry out multiple exposure；And switching device.The present invention can expose the different patterns finely required out in sensitive substrate/on piece, to reduce the cost of manufacture for various different accuracy mask plates, and the producing efficiency of mask plate can be improved in the case where not using the film.
Description
Technical field
The present invention relates to maskless photoetching technology fields, more particularly to a kind of maskless lithography system and its exposure side
Method.
Background technique
Compared to mask lithography technology, maskless photoetching technology is in high-precision HDI (high density interconnection, High Density
Interconnector multilayer circuit board field, field of flat panel displays and integrated antenna package field), can save valuableness
Mask plate, directly by Computer Design generate required line pattern be exposed on the moving substrate for being coated with photosensitive layer, meet
The requirement of multilayer plate high precision interconnection.Spatial light modulator (SLM, Special Light in mask-free photolithography system
It Modulator include) independently addressable and control a pixel array, each pixel can be to transmission, reflection or diffraction
Light generates the modulation including phase, gray scale direction or switch state.
Spatial light modulator includes DMD (Digitalmicromirrordevice, Digital Micromirror Device) or LCD
(Liquid Crystal Display, liquid crystal display), spatial light modulator is substantially to the modulation of each pixel grey scale
Modulation to the output light intensity of each pixel unit.Such as: DMD is the rectangular micromirrors array being made of many micro mirror mirror surfaces,
Maskless lithography system uses the laser irradiation DMD of specific frequency, by controlling the rotation angle of micro mirror, by modulating each picture
The output light intensity of plain unit projects to specific circuit image on the moving substrate for being coated with photosensitive layer.
The route line width of mask-free photolithography system production in the prior art only up to accomplish 15um or so, much
It is not able to satisfy the requirement currently on the market for mask plate.In addition to this, although mask-free photolithography system in the prior art
High speed photoetching scanning may be implemented, but in high-precision situation, splicing difficulty is larger, and reason mainly has:
On the one hand, mask-free photolithography system in the prior art it is difficult to ensure that every exposure figure all in focus because
High-precision figure just can guarantee two exposures when the general very little of depth of focus (within ± 10um), only graph exposure in focus
Figure in the place of splicing, line weight is consistent, and to guarantee figure in focus, just has to use range sensor.Separately
On the one hand, there is high-precision mobile platform, it is ensured that the mobile repeatable accuracy of platform just can guarantee adjacent two within 1um
Figure can be stitched together.
Thus, it is desirable to have a kind of technical solution come overcome or at least mitigate in the drawbacks described above of the prior art at least one
It is a.
Summary of the invention
The purpose of the present invention is to provide a kind of maskless lithography systems and its exposure method to show to overcome or at least mitigate
There is at least one of the drawbacks described above of technology.
To achieve the above object, the present invention provides a kind of maskless lithography system, and the maskless lithography system includes: two
Article carrying platform is tieed up, the two dimension article carrying platform is for placing sensitive substrate/piece to be exposed, and the sensitive substrate/piece is with opposite
The two-dimentional article carrying platform is set in the fixed mode of two-dimentional article carrying platform；Maskless exposure device, the maskless exposure dress
It sets including DMD and lens assembly, the lens assembly is located between the DMD and the sensitive substrate/piece, for changing described
The pixel resolution for the shadow image that DMD is projected realizes the exposure of different line width line-spacing images；The lens assembly includes
The different telecentric lens of multiple enlargement ratios；Axial spacing detection device, the axial spacing detection device are described for detecting
Axial spacing information between maskless exposure device and the sensitive substrate/piece on the optical axis, and export；Axial spacing
Device is adjusted, the axial spacing adjustment device is used to be based on the axial spacing information, controls the maskless exposure device
The axis movement makes the photosensitive surface of the sensitive substrate/piece be maintained at the focal plane of the maskless exposure device；Two dimension
Article carrying platform motion detection apparatus, the two dimension article carrying platform motion detection apparatus are hanging down for detecting the two-dimentional article carrying platform
Directly in the two dimensional motion information in the plane of the optical axis；Synchronous motion control device, the Synchronous motion control device are used for
It controls the two-dimentional article carrying platform edge and presets scanning motion direction uniform motion and two maintenance and operations based on the two-dimentional article carrying platform
Dynamic information controls the rotary movement of each micro mirror of the DMD, and the figure exposed will be needed to be divided into a plurality of wide figure and carried out
Multiple exposure；And the switching device for being switched to the stand-by telecentric lens on the optical axis.
Further, the telecentric lens are high magnification telecentric lens, low range telecentric lens；The switching device packet
Include: fixed moving substrate, the fixed moving substrate are fixed between the lens assembly and the sensitive substrate/piece；
Moving substrate, along perpendicular to sequentially arranging each telecentric lens on the direction of the optical axis on the moving substrate；And driving
Equipment, the driving equipment are located between the moving substrate and the fixed moving substrate, and the moving substrate passes through described
Driving equipment is slidably connected to the fixed moving substrate.
Further, the fixed moving substrate sets the guide rail along the direction arrangement perpendicular to the optical axis；The movement
Substrate sets the sliding block that can be moved along the guide rail；The driving equipment includes cylinder, and described cylinder one end is fixedly attached to described
Fixed moving substrate, the other end are fixedly attached to the moving substrate.
Further, the switching device further include: two locating parts, two locating part are respectively provided at described fixed mobile
The telecentric lens are aligned the optical axis for fixing the moving substrate by the predeterminated position of substrate two sides.
Further, the axial spacing detection device includes: contactless range sensor, the contactless distance
Sensor is used to detect the axial spacing information between the maskless exposure device and the sensitive substrate/piece, and exports and give
The axial spacing adjusts device；Optical path direction adjustment element, the optical path direction adjustment element are located at the maskless exposure
Between the light-emitting window of device and the light inlet of the contactless range sensor, it is used for the contactless range sensor
Optical path be adjusted on the optical axis.
Further, the optical path direction adjustment element includes reflecting prism；The contactless range sensor arrangement
In the side of the lens assembly, the reflecting prism is located between the lens assembly and sensitive substrate/piece；It is described non-contact
The laser that formula range sensor issues projects the photosensitive table of the sensitive substrate/piece via the reflection light that reflecting prism reflects
Face, and the reflection light is located on the optical axis.
Further, the two-dimentional article carrying platform is located on fixed pedestal by pneumatically supported mode.
The present invention also provides a kind of exposure method of maskless lithography system, the exposure method of the maskless lithography system
Include the following steps: that setting includes the maskless lithography system of two-dimentional article carrying platform, maskless exposure device and switching device, it should
Maskless exposure device includes the DMD telecentric lens different with multiple enlargement ratios；By sensitive substrate/piece to be exposed with opposite
Two-dimentional article carrying platform is set in the fixed mode of two-dimentional article carrying platform；The line width line of the production route of the product exposed as needed
Away from size, the telecentric lens of suitable multiplying power are switched on optical axis by switching device；Detect maskless exposure device with it is photosensitive
Axial spacing information between substrate/piece on optical axis；Based on the axial spacing information detected, maskless exposure device is controlled
Along axis movement, sensitive substrate/piece photosensitive surface is made to be maintained at the focal plane of the maskless exposure device；Control two dimension carries
Object platform along preset scanning motion direction uniform motion and control DMD on default scanning motion direction every a line each is micro-
Mirror is sequentially spaced the identical unit time and respectively rotates an angle, and the unit time is that the sensitive substrate/piece is one mobile
Micro mirror is apart from the required time.
Further, the exposure method of the maskless lithography system further include: telecentric lens and sensitive substrate/piece it
Between set reflecting prism；In the contactless range sensor of the side arrangement of telecentric lens, issue contactless range sensor
Laser project sensitive substrate/piece photosensitive surface via the reflection light that reflecting prism reflects, and reflection light is located at light
On axis.
The present invention can expose the different figures finely required out in sensitive substrate/on piece in the case where not using the film
To reduce the cost of manufacture for various different accuracy mask plates, and the producing efficiency of mask plate can be improved in case.
Detailed description of the invention
Fig. 1 is the principle schematic diagram of one embodiment of maskless lithography system provided by the present invention.
Fig. 2 is the structural schematic diagram of one embodiment of maskless lithography system provided by the present invention.
Fig. 3 is the working state schematic representation of the low power telecentric lens of maskless lithography system in Fig. 1.
Fig. 4 is the working state schematic representation of the high power telecentric lens of maskless lithography system in Fig. 1.
Fig. 5 is the principle schematic diagram of the axial spacing detection device of maskless lithography system in Fig. 1.
Fig. 6 is the structural schematic diagram of one embodiment of switching device of maskless lithography system in Fig. 1.
Appended drawing reference:
Specific embodiment
In the accompanying drawings, same or similar element is indicated using same or similar label or there is same or like function
Element.The embodiment of the present invention is described in detail with reference to the accompanying drawing.
In the description of the present invention, term " center ", " longitudinal direction ", " transverse direction ", "front", "rear", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "top", "bottom" "inner", "outside" is that orientation based on the figure or position are closed
System, is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must have
Specific orientation is constructed and operated in a specific orientation, therefore should not be understood as limiting the scope of the invention.
As shown in Figure 1, maskless lithography system provided by the present embodiment includes sensitive substrate/piece 2, two-dimentional article carrying platform
3, maskless exposure device 1, axial spacing detection device 4, axial spacing adjustment device 5, two-dimentional article carrying platform motion detection dress
Set 8, Synchronous motion control device 6 and switching device 7, in which:
Sensitive substrate/piece 2 to be exposed is placed on two-dimentional article carrying platform 3, and sensitive substrate/piece 2 is relative to two-dimentional loading
The fixed mode of platform 3 is set to two-dimentional article carrying platform 3.
Maskless exposure device 1 includes lens assembly and spatial light modulator, in which: the lens assembly is located at true sky
Between between optical modulator and sensitive substrate/piece 2, for changing the pixel for the shadow image that the spatial light modulator projects
Resolution ratio realizes the exposure of different line width line-spacing images.
The lens assembly includes the different telecentric lens of multiple enlargement ratios, can will be stand-by using switching device 7
The telecentric lens are switched on optical axis 110.The selection principle of the enlargement ratio of telecentric lens it is to be understood that
According to product to be exposed to the size requirements of the line width line-spacing of production route, such as: product to be exposed is to life
The line width line-spacing on producing line road requires finely, then to need the telecentric lens relatively high using enlargement ratio, i.e., mentioned in this article
High magnification telecentric lens 15；Conversely, the telecentric lens relatively low using enlargement ratio, i.e., low range mentioned in this article
Telecentric lens 16.Telecentric lens mentioned below refer to high magnification telecentric lens 15 or low range telecentric lens 16.
Under normal conditions, the enlargement ratio range of high magnification telecentric lens 15 is limited to (low in the range of 3:1 to 5:1)
The enlargement ratio range of multiplying power telecentric lens 16 is limited in the range of (1.8:1 to 1:1).In actual use, it produces
The line width line-spacing of route uses low range telecentric lens 16 when being greater than 7um, utilizes low range telecentric lens 16, it is possible to reduce
The time of exposure improves the efficiency of exposure.When producing the line width line-spacing of route greater than 2um, low range telecentric mirror both can be used
First 16, high magnification telecentric lens 15 also can be used, then can require selection according to fine.Switching uses high magnification telecentric lens
15, the precision of exposure can be improved, complete the irrealizable exposure accuracy of low range telecentric lens 16.Therefore, the present embodiment can
In the case where not using the film, to expose the different patterns finely required out on sensitive substrate/piece 2, to reduce needle
To the cost of manufacture of various different accuracy mask plates, and the producing efficiency of mask plate can be improved.
Spatial light modulator can use DMD11 shown in figure, but not limited to this, LCD can also be used.Below with sky
Between optical modulator using for DMD, illustrate the working principle of the maskless lithography system of the present embodiment.DMD is the one of photoswitch
Kind, the on-off action of photoswitch is realized using rotating mirror.
The lens assembly, the micro mirror battle array that DMD11 is made of many micro mirror mirror surfaces are set between DMD11 and sensitive substrate/piece 2
Column, as shown in Figure 3 and Figure 4, light source 14 is laser light source, exports the laser of fixed wave length, which passes through bundling optical fiber 12
Conduction passes through one group of scintilloscope (not shown) after the uniformity of laser is adjusted via dodging device 13 to dodging device 13
It projects on DMD11, DMD11 will need the pattern projection exposed to get off, and the shadow of imaging is made to enter the lens assembly
In the telecentric lens for the enlargement ratio selected.Change the picture for the shadow image that DMD11 is projected using the telecentric lens
Plain resolution ratio realizes the exposure of different line width line-spacing images.Maskless lithography system provided by the present embodiment can will need
The figure of exposure is directly exposed on sensitive substrate/piece 2, without using the film.
Axial spacing detection device 4 is for detecting between the maskless exposure device 1 and sensitive substrate/piece 2 in optical axis
Axial spacing information on 110, and export.The axial spacing information is substantially the end face for going out light end and the sense of telecentric lens
Axial spacing information between photopolymer substrate/piece 2." the axial spacing information " that is referred in text refer to along 110 direction of optical axis away from
From information.The optical axis that " optical axis 110 " can be understood as maskless exposure device 1 refers specifically to the optical axis of DMD11 or selectes
Telecentric lens be placed in after the downstream of DMD11, the optical axis of telecentric lens." downstream " is then the exit direction with optical path direction
On the basis of.Such as: bundling optical fiber 12 and dodging device 13 are located at the upstream of DMD11, and the lens assembly is located under DMD11
Trip.
As shown in figure 5, in one embodiment, axial spacing detection device 4 includes contactless 41 He of range sensor
Optical path direction adjustment element 42, wherein contactless range sensor 41 is for detecting maskless exposure device 1 and photosensitive base
Axial spacing information between plate/piece 2, and export and adjust device 5 to axial spacing.Contactless range sensor 41 can be adopted
With the products such as model Keyemce LK-H150+LK-F2, LK-H080+LK-F3, LK-H052K on the market.Optical path direction adjustment member
Part 42 is located between the light-emitting window of maskless exposure device 1 and the light inlet of contactless range sensor 41, for connecing non-
The optical path of touch range sensor 41 is adjusted on optical axis 110.
In one embodiment, optical path direction adjustment element 42 includes reflecting prism.Contactless 41 cloth of range sensor
It sets in the side of the lens assembly, the reflecting prism is located between the lens assembly and sensitive substrate/piece 2.It is non-contact
The laser that formula range sensor 41 issues projects the photosensitive table of sensitive substrate/piece 2 via the reflection light that reflecting prism reflects
Face, and the reflection light is located on optical axis 110.
Axial spacing adjusts device 5 and is used to be based on the axial spacing information, controls maskless exposure device 1 along optical axis
110 movements, make the photosensitive surface of sensitive substrate/piece 2 be maintained at the focal plane of maskless exposure device 1.Working principle: maskless
Exposure device 1 can be along 110 direction free movement of optical axis, and contactless range sensor 41 is mounted on maskless exposure device
On 1, can real-time measurement maskless exposure device 1 at a distance from sensitive substrate/piece 2, can will measurement distance feed back to control system
It unites (such as servo-control system, be not shown in the figure), control system controls maskless exposure device 1 along 110 direction of optical axis again
Movement, to guarantee the axial spacing between maskless exposure device 1 and sensitive substrate/piece 2 within a preset range.
It should be noted that axial spacing detection device 4 and axial spacing adjustment device 5 can form an automatic focusing
System, contactless range sensor 41 measure distance using red laser light source, are mounted on the side of telecentric lens, reflect rib
Mirror is mounted below telecentric lens, and the optical axis 110 with telecentric lens is coaxial, when installation make the optical axis 110 of telecentric lens with it is non-
The optical path 410 of contact range sensor 41 is overlapped, may be implemented in this way real-time measurement telecentric lens center to sensitive substrate/
Axial spacing information between piece 2 is formed by distance that control system and contactless range sensor 41 are measured
One closed-loop feedback mechanism, to guarantee that the focal plane of telecentric lens remains unchanged during exposing surface sweeping.
Two-dimentional article carrying platform motion detection apparatus 8 is for detecting two-dimentional article carrying platform 3 in the plane perpendicular to optical axis 110
Two dimensional motion information, usual two dimensional motion include X-direction and Y-direction movement, which is mutually perpendicular to.Synchronous motion control
Device 6 is for controlling two-dimentional article carrying platform 3 along default scanning motion direction uniform motion and the two dimension based on two-dimentional article carrying platform 3
The on-off action of motion information synchronously control spatial light modulator, i.e. each micro mirror of synchronously control DMD11 are according to time elder generation
The rotary movement of sequence afterwards will need the figure exposed to be divided into a plurality of wide figure and carry out multiple exposure.
As shown in Figures 2 to 4, in one embodiment, switching device 7 includes fixed substrate 71, moving substrate 72 and drives
Dynamic equipment 75, fixed substrate 71 are fixed between the lens assembly and sensitive substrate/piece 2.Along vertical on moving substrate 72
Directly in sequentially arranging each telecentric lens on the direction of the optical axis 110.Driving equipment 75 is located at moving substrate 72 and fixes
Between substrate 71, moving substrate 72 is slidably connected to fixed substrate 71 by the driving equipment.Telecentric lens are fixed on
On moving substrate 72.
As shown in fig. 6, in one embodiment, fixed substrate 71 sets the guide rail along the direction arrangement perpendicular to optical axis 110
74.Moving substrate 72 is set can be along the sliding block 76 that guide rail 74 moves.Driving equipment 75 includes cylinder 751, and 751 one end of cylinder is fixed to be connected
It is connected to fixed substrate 71, the other end is fixedly attached to moving substrate 72.By controlling the unlatching and closing of cylinder 751, to push away
Dynamic moving substrate 72 moves, to achieve the purpose that switch telecentric lens.
In one embodiment, switching device 7 further includes two locating parts 73, and two locating parts 73 are respectively provided at fixed substrate two
The predeterminated position of side is used for fixed substrate, by telecentric lens optical axis alignment 110.Need using low range telecentric lens 16 into
Constantly, driving equipment 75 shifts moving substrate 72 onto left side for row exposure, and relies on the fixed low range telecentricity of the locating part 73 in left side
Camera lens 16 is overlapped the optical axis of low range telecentric lens 16 with the optical axis 110 of DMD11；Similarly, high magnification telecentric lens are being used
15 when being exposed, and driving equipment 75 shifts moving substrate 72 onto right side, and relies on the fixed high magnification of the locating part 73 on right side remote
Heart camera lens 15 is overlapped the optical axis of high magnification telecentric lens 15 with the optical axis 110 of DMD11, realizes 16 He of low range telecentric lens
The switching of high magnification telecentric lens 15.In order to express easily, herein using " left side " " right side " description switching device 7 shown in figure
Working principle.
In one embodiment, two-dimentional article carrying platform 3 is located on fixed pedestal by pneumatically supported mode.It can be real to reach
Existing high-precision pattern reduces the resistance in 3 motion process of two-dimentional article carrying platform using pneumatically supported mode, improves two-dimentional loading
The kinematic accuracy of platform 3, this is advantageously implemented accurately pattern splicing.
The present embodiment also provides a kind of exposure method of maskless lithography system, the exposure side of the maskless lithography system
Method includes the following steps:
Maskless lithography system including two-dimentional article carrying platform 3, maskless exposure device 1 and switching device 7, the nothing are set
Mask exposure device 1 includes the DMD11 telecentric lens different with multiple enlargement ratios.Specifically, high magnification telecentric lens 15
Enlargement ratio range is limited to that (in the range of 3:1 to 5:1), the enlargement ratio range of low range telecentric lens 16 is limited to
In the range of (1.8:1 to 1:1).
Sensitive substrate/piece 2 to be exposed is set to two-dimentional article carrying platform in a manner of fixed relative to two-dimentional article carrying platform 3
3。
The line width size of the production route of the product exposed as needed, by switching device 7 by the telecentricity of suitable multiplying power
On Shot change to optical axis 110.The selection principle of the enlargement ratio of telecentric lens is it is to be understood that according to product pair to be exposed
The size requirements of the line width line-spacing of route are produced, such as: product to be exposed requires finely, then the line width line-spacing of production route
Need the telecentric lens relatively high using enlargement ratio, i.e., high magnification telecentric lens 15 mentioned in this article；Conversely, using putting
The relatively low telecentric lens of big multiplying power, i.e., low range telecentric lens 16 mentioned in this article.
Detect the axial spacing information between maskless exposure device 1 and sensitive substrate/piece 2 on optical axis 110.Based on inspection
The axial spacing information measured, control maskless exposure device 1 are moved along optical axis 110, make the photosensitive surface of sensitive substrate/piece 2
It is maintained at the focal plane of maskless exposure device 1, can guarantee that the focal plane of telecentric lens is kept during exposing surface sweeping in this way
It is constant.
Two-dimentional article carrying platform 3 is controlled along default scanning motion direction uniform motion and the two dimension based on two-dimentional article carrying platform 3
Motion information synchronously control DMD11 each micro mirror of every a line on default scanning motion direction is sequentially spaced identical unit
Time respectively rotates an angle, and the unit time is the mobile micro mirror of the sensitive substrate/piece 2 apart from the required time,
The figure exposed will be needed to be divided into a plurality of wide figure and carry out multiple exposure.
In one embodiment, the exposure method of the maskless lithography system further include:
Reflecting prism is set between telecentric lens and sensitive substrate/piece 2；
In the contactless range sensor 41 of the side arrangement of telecentric lens, issue contactless range sensor 41
Laser projects the photosensitive surface of sensitive substrate/piece 2 via the reflection light that reflecting prism reflects, and reflection light is located at optical axis
On 110.Axial spacing detection device 4 and axial spacing adjustment device 5 can form an autofocus system, it is contactless away from
It is used with a distance from red laser light source measurement from sensor 41, is mounted on the side of telecentric lens, reflecting prism is mounted on telecentric mirror
Below head, the optical axis 110 with telecentric lens is coaxial, and when installation makes the optical axis 110 and contactless Distance-sensing of telecentric lens
The optical path 410 of device 41 is overlapped, and real-time measurement telecentric lens center may be implemented in this way to the axial direction between sensitive substrate/piece 2
Pitch information forms a closed loop feedback machine by distance that control system and contactless range sensor 41 are measured
System, to guarantee that the focal plane of telecentric lens remains unchanged during exposing surface sweeping.
Finally it is noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations.This
The those of ordinary skill in field is it is understood that be possible to modify the technical solutions described in the foregoing embodiments or right
Part of technical characteristic is equivalently replaced；These are modified or replaceed, and it does not separate the essence of the corresponding technical solution originally
Invent the spirit and scope of each embodiment technical solution.
Claims (9)
1. a kind of maskless lithography system characterized by comprising
Two-dimentional article carrying platform (3), the two dimension article carrying platform (3) is for placing sensitive substrate/piece (2) to be exposed, the sense
Photopolymer substrate/piece (2) is set to the two-dimentional article carrying platform (3) in a manner of fixed relative to two-dimentional article carrying platform (3)；
Maskless exposure device (1), the maskless exposure device (1) include DMD (11) and lens assembly, the lens assembly
It is located between the DMD (11) and the sensitive substrate/piece (2), the shadow image projected for changing the DMD (11)
Pixel resolution, realize the exposure of different line width line-spacing images；The lens assembly includes different remote of multiple enlargement ratios
Heart camera lens；
Axial spacing detection device (4), the axial spacing detection device (4) is for detecting the maskless exposure device (1)
Axial spacing information between the sensitive substrate/piece (2) on optical axis (110), and export；
Axial spacing adjusts device (5), and axial spacing adjustment device (5) is used to be based on the axial spacing information, control
The maskless exposure device (1) moves along the optical axis (110), is maintained at the photosensitive surface of the sensitive substrate/piece (2)
The focal plane of the maskless exposure device (1)；
Two-dimentional article carrying platform motion detection apparatus (8), the two dimension article carrying platform motion detection apparatus (8) is for detecting described two
Tie up the two dimensional motion information of article carrying platform (3) in the plane perpendicular to the optical axis (110)；
Synchronous motion control device (6), the Synchronous motion control device (6) is for controlling described two-dimentional article carrying platform (3) edge
Default scanning motion direction uniform motion and the two dimensional motion information for being based on the two-dimentional article carrying platform (3) control the DMD
(11) each micro mirror of every a line is sequentially spaced the identical unit time and rotates an angle on default scanning motion direction
Degree, the unit time are the mobile micro mirror of the sensitive substrate/piece (2) apart from the required time, the figure that needs are exposed
It is divided into a plurality of wide figure and carries out multiple exposure；And
Switching device (7) for being switched to the stand-by telecentric lens on the optical axis (110)；High magnification telecentric lens
(15) enlargement ratio range is limited to that (in the range of 3:1 to 5:1), the enlargement ratio ranges of low range telecentric lens (16) is limited
It is scheduled in the range of (1.8:1 to 1:1)；The low range telecentric lens are used when producing the line width line-spacing of route greater than 7um
(16), the low range telecentric lens (16) or the high magnification telecentric mirror are used when producing the line width line-spacing of route greater than 2um
Head (15).
2. maskless lithography system as described in claim 1, which is characterized in that the telecentric lens are high magnification telecentric lens
(15), low range telecentric lens (16)；
The switching device (7) includes:
Fixed moving substrate (71), the fixed moving substrate (71) are fixed at the lens assembly and the photosensitive base
Between plate/piece (2)；
Moving substrate (72), along perpendicular to sequentially arranging each institute on the direction of the optical axis (110) on the moving substrate (72)
State telecentric lens；With
Driving equipment (75), the driving equipment (75) be located at the moving substrate (72) and the fixed moving substrate (71) it
Between, the moving substrate (72) is slidably connected to the fixed moving substrate (71) by the driving equipment.
3. maskless lithography system as claimed in claim 2, which is characterized in that the fixed moving substrate (71) sets along vertical
In the guide rail (74) that the direction of the optical axis (110) is arranged；
The moving substrate (72) sets the sliding block (76) that can be moved along the guide rail (74)；
The driving equipment (75) includes cylinder (751), and described cylinder (751) one end is fixedly attached to the fixed moving substrate
(71), the other end is fixedly attached to the moving substrate (72).
4. maskless lithography system as claimed in claim 3, which is characterized in that the switching device (7) further include:
Two locating parts (73), two locating part (73) are respectively provided at the predeterminated position of fixed moving substrate (71) two sides,
For fixing the moving substrate (72), the telecentric lens are aligned the optical axis (110).
5. maskless lithography system according to any one of claims 1 to 4, which is characterized in that the axial spacing detection
Device (4) includes:
Contactless range sensor (41), the contactless range sensor (41) is for detecting the maskless exposure dress
The axial spacing information between (1) and the sensitive substrate/piece (2) is set, and exports and adjusts device (5) to the axial spacing；
Optical path direction adjustment element (42), the optical path direction adjustment element (42) are located at the maskless exposure device (1)
Between light-emitting window and the light inlet of the contactless range sensor (41), it is used for the contactless range sensor
(41) optical path is adjusted on the optical axis (110).
6. maskless lithography system as claimed in claim 5, which is characterized in that the optical path direction adjustment element (42) includes
Reflecting prism；
The contactless range sensor (41) is arranged in the side of the lens assembly, and the reflecting prism is located at the mirror
Between head assembly and sensitive substrate/piece (2)；
The laser that the contactless range sensor (41) issues projects described via the reflection light that reflecting prism reflects
The photosensitive surface of sensitive substrate/piece (2), and the reflection light is located on the optical axis (110).
7. maskless lithography system as described in claim 1, which is characterized in that the two dimension article carrying platform (3) passes through air bearing
Mode be located on fixed pedestal.
8. a kind of exposure method of maskless lithography system, which comprises the steps of:
Maskless lithography system including two-dimentional article carrying platform (3), maskless exposure device (1) and switching device (7) is set, it should
Maskless exposure device (1) includes DMD (11) telecentric lens different with multiple enlargement ratios；
Sensitive substrate/piece (2) to be exposed is set to two-dimentional article carrying platform in a manner of fixed relative to two-dimentional article carrying platform (3)
(3)；
The line width line-spacing size of the production route of the product exposed as needed, by switching device (7) by the remote of suitable multiplying power
On heart Shot change to optical axis (110)；
Detect the axial spacing information between maskless exposure device (1) and sensitive substrate/piece (2) on optical axis (110)；
Based on the axial spacing information detected, control maskless exposure device (1) and moved along optical axis (110), make sensitive substrate/
The photosensitive surface of piece (2) is maintained at the focal plane of the maskless exposure device (1)；
Two-dimentional article carrying platform (3) is controlled along default scanning motion direction uniform motion and control DMD (11) in default scanning motion
Each micro mirror of every a line is sequentially spaced the identical unit time and rotates an angle on direction, and the unit time is institute
Sensitive substrate/piece (2) mobile micro mirror is stated apart from the required time；
The enlargement ratio range of high magnification telecentric lens (15) be limited to (in the range of 3:1 to 5:1), low range telecentric lens
(16) enlargement ratio range is limited in the range of (1.8:1 to 1:1)；The line width line-spacing of production route uses when being greater than 7um
The low range telecentric lens (16) use the low range telecentric lens (16) when producing the line width line-spacing of route greater than 2um
Or the high magnification telecentric lens (15).
9. the exposure method of maskless lithography system as claimed in claim 6, which is characterized in that further include:
Reflecting prism is set between telecentric lens and sensitive substrate/piece (2)；
In the contactless range sensor of the side arrangement of telecentric lens (41), issue contactless range sensor (41)
Laser projects the photosensitive surface of sensitive substrate/piece (2) via the reflection light that reflecting prism reflects, and reflection light is located at light
On axis (110).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810193094.7A CN108303858B (en) | 2018-03-09 | 2018-03-09 | A kind of maskless lithography system and its exposure method |
| PCT/CN2018/086446 WO2019169733A1 (en) | 2018-03-09 | 2018-05-11 | Maskless photoetching system and exposure method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810193094.7A CN108303858B (en) | 2018-03-09 | 2018-03-09 | A kind of maskless lithography system and its exposure method |
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| CN108303858B true CN108303858B (en) | 2019-10-01 |
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| CN111694221A (en) * | 2019-03-12 | 2020-09-22 | 京东方科技集团股份有限公司 | Exposure machine and focal length detection method thereof |
| CN112946958B (en) * | 2019-12-10 | 2022-08-12 | 苏州大学 | High-speed motion control method and system applied to DMD system position workbench |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105301912A (en) * | 2014-07-11 | 2016-02-03 | 上海微电子装备有限公司 | Exposure device and exposure method for lithographic equipment |
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| US6870604B2 (en) * | 2002-04-23 | 2005-03-22 | Ball Semiconductor, Inc. | High resolution point array |
| KR20110082224A (en) * | 2010-01-11 | 2011-07-19 | 삼성전자주식회사 | Maskless exposure apparatus and frame data processing method thereof |
| CN102122118A (en) * | 2011-02-23 | 2011-07-13 | 中国科学院上海光学精密机械研究所 | Laser direct-writing device |
| KR20120136206A (en) * | 2011-06-08 | 2012-12-18 | 삼성전기주식회사 | Maskless processing apparatus |
| CN102929108A (en) * | 2012-12-04 | 2013-02-13 | 苏州微影光电科技有限公司 | Method for aligning by combining lenses with multiple magnifications in direct-writing photoetching machine |
| CN103901730B (en) * | 2012-12-28 | 2016-08-24 | 上海微电子装备有限公司 | Exposure device and exposure method |
| CN103744271B (en) * | 2014-01-28 | 2015-10-28 | 苏州苏大维格光电科技股份有限公司 | A kind of laser direct writing system and photoetching method |
| CN104536120A (en) * | 2015-01-04 | 2015-04-22 | 中国科学院光电技术研究所 | Projection objective lens of DMD maskless photoetching machine |
| CN107561876A (en) * | 2017-10-19 | 2018-01-09 | 苏州源卓光电科技有限公司 | A kind of new mask-free photolithography system and its technological process |
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| CN105301912A (en) * | 2014-07-11 | 2016-02-03 | 上海微电子装备有限公司 | Exposure device and exposure method for lithographic equipment |
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| WO2019169733A1 (en) | 2019-09-12 |
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Denomination of invention: Maskless lithography system and exposure method therefor Effective date of registration: 20200507 Granted publication date: 20191001 Pledgee: Zhongshan branch of Dongguan Bank Co., Ltd Pledgor: ZHONGSHAN AISCENT TECHNOLOGIES Co.,Ltd. Registration number: Y2020440000107 |