CN108292642A - Power semiconductor device - Google Patents
Power semiconductor device Download PDFInfo
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- CN108292642A CN108292642A CN201680067437.4A CN201680067437A CN108292642A CN 108292642 A CN108292642 A CN 108292642A CN 201680067437 A CN201680067437 A CN 201680067437A CN 108292642 A CN108292642 A CN 108292642A
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- Prior art keywords
- power semiconductor
- semiconductor device
- conductor layer
- base plate
- semiconductor element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
In the power semiconductor device (100) for being engaged the electrode of power semiconductor element (2,3) with the conductor layer of printed base plate (50) by solder, it is also equipped with the joint portion (54) being formed as one with conductor layer, the joint portion has the notch (60) of comb teeth shape, and is configured in a manner of not being located at the central point (21) of power semiconductor element.
Description
Technical field
The present invention relates to a kind of power semiconductor devices, are related to one kind in detail and have to be equipped with power semiconductor
The power semiconductor device of the insulating substrate of element and the printed base plate for the main circuit for being formed with power semiconductor element.
Background technology
Power semiconductor device is used in the equipment in the extensive field such as industry equipment, electric railroad, household electrical appliances
The control of main electric power (power) requires miniaturization, height especially for the power semiconductor device for being equipped on industry equipment
Thermal diffusivity, high reliability.In addition, in power semiconductor device, the power semiconductors element such as IGBT and FwDi is installed
In the high insulating substrate of thermal diffusivity and the surface electrode of power semiconductor element is constituted such as being connected up with aluminum steel
The case where circuit, is more.
In such construction, due to being connected up on insulating substrate, there are the following problems：The insulation base of high price
The area of plate is big, leads to cost increase, and the shape of power semiconductor device also becomes larger.
Therefore, it in order to realize the miniaturization of power semiconductor device, proposes to be equipped in patent document 1 and partly lead
The insulating substrate of volume elements part is electrically connected and is stored by conductive adhesives such as solders with the printed base plate for carrying out double-sided wiring
In the construction in resin-case.
Patent document 1：Japanese Unexamined Patent Publication 2012-74730 bulletins
Invention content
Problems to be solved by the invention
On the other hand, in the power semiconductor device to high current to be carried out at high speed switch, calorific value is big, and insulate base
The thermal expansion difference of plate and printed base plate becomes larger.Therefore, because temperature cycles and be present between insulating substrate and printed base plate
Solder and power semiconductor element in generate big thermal stress.
In addition, for the electricity for the 100A or more that circulates to the printed base plate for the driving circuit for being formed with power semiconductor element
It flows, the thickness of the copper conductor layer in printed base plate needs for 0.1mm or more.Therefore, especially in printed base plate and electric power with partly
The thermal stress generated in solder-joint parts between conductor element becomes problem.Therefore, in order to ensure power semiconductor device
Long-term reliability, need reduce the undesirable condition caused by the thermal stress.
However, although patent document 1 discloses the structure of the power semiconductor device using insulating substrate and printed base plate
It makes, but without especially describing the reduction of thermal stress.
The present invention was completed to solve the above problem, and its purpose is to provide one kind, and electric power can be ensured with partly leading
The power semiconductor device of the long-term reliability of body device.
The solution to the problem
In order to achieve the above object, the present invention is constituted as follows.
That is, the power semiconductor device of one embodiment of the present invention has power semiconductor element and has conductor layer
Printed base plate, in by solder by the conductor layer of the electrode of the power semiconductor element and the printed base plate into
The state of engagement is gone, the power semiconductor device is characterized in that the power semiconductor element is in surface electrode
With for engaging solder metal film and the film that is not engaged with solder, configured with multiple in the power semiconductor element
The metal film, the film for not engaging the solder are configured at the center of the power semiconductor element, are also equipped with joint portion, should
Joint portion constitutes a part for the conductor layer, and in the state being formed as one with the conductor layer, the joint portion has
Notch, the notch are configured to corresponding with the metal film of the semiconductor element.
The effect of invention
Power semiconductor device according to one method of the present invention, has joint portion, which has notch, by
The electrode of this power semiconductor element and the bonding area of the conductor layer of printed base plate are less than without in the case of joint portion
Bonding area.As a result, in the case where temperature cycles act on the entirety of power semiconductor device, acts on and be present in
The thermal stress of solder between the electrode of power semiconductor element and the conductor layer of printed base plate becomes smaller compared in the past.Cause
And it can reduce and then prevent the generation of the undesirable conditions such as the breakage in the solder, it can be ensured that power semiconductor device
Long-term reliability.
Description of the drawings
Fig. 1 is indicated in the power semiconductor device of embodiment 1 on insulating substrate equipped with electric power with partly leading
The concept map of the state of volume elements part.
Fig. 2 is the concept map of power semiconductor device shown in FIG. 1.
Fig. 3 is to indicate to connect with power semiconductor element by solder in power semiconductor device shown in Fig. 1
The concept map in the face of the printed base plate of conjunction.
Fig. 4 is the concept map of the power semiconductor device in Section A-A shown in Fig. 2.
Fig. 5 is joint portion and the power semiconductor that amplification shows to have power semiconductor device shown in Fig. 4
The concept map of the state for the solder that element is engaged.
Fig. 6 is that the metal film for the power semiconductor element for indicating that power semiconductor device shown in FIG. 1 has is
Circular concept map.
Fig. 7 is to indicate joint portion that power semiconductor device shown in Fig. 4 has and power semiconductor element
The concept map of the variation of engagement.
Fig. 8 is to indicate joint portion that power semiconductor device shown in fig. 5 has and power semiconductor element
The concept map of the variation of engagement.
Fig. 9 is the concept map of the power semiconductor device of embodiment 2.
Figure 10 is to indicate to connect with power semiconductor element by solder in power semiconductor device shown in Fig. 9
The concept map in the face of the printed base plate of conjunction.
Figure 11 is the concept map of the power semiconductor device in section B-B shown in Fig. 9.
Figure 12 is to indicate joint portion that power semiconductor device shown in Figure 11 has and power semiconductor element
Engagement state concept map.
Figure 13 is to indicate joint portion that power semiconductor device shown in Figure 11 has and power semiconductor element
Engagement variation concept map.
Figure 14 is power semiconductor corresponding with embodiment 1 dress in the power semiconductor device of embodiment 3
The concept map set.
Figure 15 is the figure for indicating the sections C-C shown in Figure 14, is in power semiconductor device corresponding with embodiment 1
Concept map.
Figure 16 is to indicate joint portion that power semiconductor device shown in figure 15 has and gap and electric power with partly leading
The concept map of the state of the engagement of volume elements part.
Figure 17 is power semiconductor corresponding with embodiment 2 dress in the power semiconductor device of embodiment 3
The concept map set.
Figure 18 is the figure for indicating the sections D-D shown in Figure 17, is in power semiconductor device corresponding with embodiment 1
Concept map.
Figure 19 is to indicate joint portion that power semiconductor device shown in Figure 18 has and gap and electric power with partly leading
The concept map of the state of the engagement of volume elements part.
Figure 20 be in the power semiconductor device for indicate embodiment 3 in joint portion do not have notch in the case of
State concept map.
Figure 21 is power semiconductor corresponding with embodiment 1 dress in the power semiconductor device of embodiment 4
The concept map set.
Figure 22 is the figure for indicating the sections E-E shown in Figure 21, is in power semiconductor device corresponding with embodiment 1
Concept map.
(reference sign)
1：Insulating substrate；2：IGBT；3：Diode；21：Central point；41、42：Solder；50：Printed base plate；52：Far side
Copper conductor layer；53：Proximal side copper conductor layer；54、54-2：Joint portion；55：Gap；58：Through hole；100、200、300、400、
500、600：Power semiconductor device.
Specific implementation mode
About the power semiconductor device as embodiment, illustrated referring to figure.In addition, in each figure
In, identical symbol is added to same or like structure division.In addition, in order to avoid the following description unnecessarily becomes superfluous
It grows and makes it should be readily apparent to one skilled in the art that omitting the detailed description for the item having been known sometimes and to substantially the same
The repeated explanation of structure.In addition, the following description and the content of attached drawing are not intended to limit the theme recorded in claims.
Embodiment 1.
Fig. 1, Fig. 2, Fig. 4, Fig. 6 are the concepts of the general structure for the power semiconductor device 100 for indicating embodiment 1
Figure, Fig. 3 is the concept map for 53 side of proximal side copper conductor layer for indicating printed base plate 50.
There is power semiconductor device 100 power semiconductor element 2,3 and printed base plate 50 to be used as basic knot
Structure part.In addition to this, can also have insulating substrate 1, shell in the power semiconductor device 100 of present embodiment 1
7, sealing resin 6, electrode terminal 8 etc..
In the present embodiment, (the Insulated Gate Bipolar Transistor of IGBT 2：Insulated gate bipolar
Transistor) and diode (such as FwDi) 3 be equivalent to power semiconductor element.Insulating substrate 1 has as an example：Resin is exhausted
Embolium 1a, thickness 0.125mm；And it is adhered to such as thickness on the two sides opposed in a thickness direction of insulation resin piece 1a
The copper conductor layer 1c for being 0.5mm for the copper conductor layer 1b of 2mm and such as thickness.For the copper conductor layer 1c, IGBT of insulating substrate 1
2 and diode 3, each back side more specifically in IGBT 2 and diode 3 electrode by solder 41 electrically and machinery
Ground connects.IGBT 2 is for example with the size that 8mm × 8mm and thickness are 0.08mm, and diode 3 is for example with 8mm × 6mm and thickness
Degree is the size of 0.08mm.Such as Al films and so that energy for not engaging solder are formed on the surface of IGBT 2 and diode 3
Enough metal films 2a, 3a such as Au of engagement solder.Here, the film for not engaging solder is located in the surface of IGBT 2 and diode 3
Centre.As solder 41, the solder that thickness is about 0.1mm and Sn-Ag-Cu systems is used.Such insulating substrate 1 has both 2 Hes of IGBT
The effect of wiring in each electrode of the back side of the heat dissipation of diode 3 and two semiconductor elements 2,3.
As shown in figure 4, printed base plate 50 is configured to and is installed on the equal power semiconductors elements of IGBT 2 of insulating substrate 1
It is opposed and parallel or substantially parallel.Printed base plate 50 has：Core material 51, such as thickness are 0.5mm, and material is FR-4 (Flame
Retardant Type 4)；And the two sides on the thickness direction of core material 51 is formed in relative to power semiconductor element
For distal side far side copper conductor layer 52 and be formed in the proximal side copper conductor layer 53 of nearside.52 He of far side copper conductor layer
53 respective thickness of proximal side copper conductor layer is such as 0.1mm, is adhered to core material 51 by adhesive sheet (not shown), forms circuit
Pattern.In addition, far side copper conductor layer 52 and proximal side copper conductor layer 53 are via 56 electrical ties of through-hole.
Here, in the case where sealing resin 6 is using epoxy resin, in order to ensure electrical isolation, printing base opposite each other
The semiconductor element of plate 50 and IGBT 2 and diode 3 needs to separate the interval of 0.3mm or more.
In addition, the proximal side copper conductor layer 53 of printed base plate 50 has as one of the characteristic structural in present embodiment
Joint portion 54.Joint portion 54 is that each surface electrode in IGBT 2 and diode 3 is passed through weldering with proximal side copper conductor layer 53
The part that material 42 electrically and mechanically engages.That is, the proximal side copper conductor of printed base plate 50 via joint portion 54
Each surface electrode in layer 53 and IGBT 2 and diode 3 is connected.About joint portion 54, said in further detail below
It is bright.In addition, solder 42 is, for example, the solder for the Sn-Ag-Cu systems that thickness is 0.2mm to 0.8mm.
As the other structures of power semiconductor device 100, in the peripheral edge portion of insulating substrate 1, as shown in figure 4, logical
It crosses silicone bonding agent (not shown) and is bonded with the shell 7 being mainly made of PPS (polyphenylene sulfide).It is embedded with electrode in shell 7
Terminal 8, the emitter electrode and gate electrode (being equivalent to surface electrode) of the semiconductor elements such as IGBT 2 and diode 3 are from printing
The closing line of such as φ 0.3mm of the proximal side copper conductor layer 53 of substrate 50 via far side copper conductor layer 52 and by aluminum
(bonding wire) 9 is electrically connected in electrode terminal 8.
In addition, in the inside of shell 7, the sealing of epoxy resin is injected from the gap of insulating substrate 1 and printed base plate 50
Resin 6 carries out vacuum defoamation and heats to make its hardening until covering the upper surface of printed base plate 50.It is arranged as a result,
It is sealed by sealing resin 6 in the IGBT 2, diode 3, printed base plate 50 etc. of insulating substrate 1.
Then, joint portion 54 is described in detail.
Fig. 5 indicates the plan view at joint portion 54, and indicates joint portion 54 and be for example formed in the gold of the electrode of IGBT 2
Belong to the engagement state using solder 42 of film 2a.
Metal film 2a is equably configured respectively in the multiple electrodes in IGBT 2, the area equation of each metal film 2a.
About the gap between each metal film 2a, to keep away in the range of can equably configure metal film 2a on each electrode of IGBT 2
Exempt from the mode that the solder engaged 42 is in contact with each other and is set as 0.1mm or more as an example.In addition, the ruler about each metal film 2a
It is very little, from the viewpoint of the convenience of supply solder 42, it is set as 2mm width or more as an example.In addition, above-mentioned " equalization " is
Refer to, ± 1% range below of the configuration space of metal film 2a.
In addition, the shape about metal film 2a, be not intended to be defined in it is rectangular-shaped, such as can be set as semicircle, ellipse,
The arbitrary geometry shape such as triangle.Such as circular shape shown in fig. 6 compared to the rectangular shape the case where for also have
Stress in solder-joint parts 54 is able to the effect mitigated.
In addition, Fig. 5 diagrams are formed in the metal film 2a of the electrode of IGBT 2, but about the electrode for being formed in diode 3
Metal film 3a it is also the same.
Joint portion 54 is included in the proximal side copper conductor layer 53 of printed base plate 50, constitutes the one of proximal side copper conductor layer 53
Part is formed as one with proximal side copper conductor layer 53, as shown in figure 5, in the present embodiment, joint portion 54 for example with
The comb teeth shape being made of recess portion 61 and protrusion 62.In the present embodiment, at such joint portion 54, it is formed in IGBT2
It is engaged with the proximal side copper conductor layer 53 of printed base plate 50 with metal film 2a, 3a of the surface electrode of diode 3.Therefore, it closes
In formed comb teeth shape recess portion 61 and protrusion 62 size, according to the metal film 2a on the surface for being formed in IGBT 2 into but shape
It is determined respectively at the size of the metal film 3a on the surface of diode 3.The width for forming the recess portion of comb teeth shape is set as an example
For 0.1mm or more.
In addition, proximal side copper conductor layer 53 has comb teeth shape, is thus formed to be used as in proximal side copper conductor layer 53 and be passed through
The notch 60 of the slot of logical proximal side copper conductor layer 53.
By using the joint portion 54 of such comb teeth shape, IGBT 2 and diode as power semiconductor element
3 are less than previous, proximal side copper without notch 60 with the bonding area of the proximal side copper conductor layer 53 of printed base plate 50 leads
The bonding area of body layer 53 and the electrode of power semiconductor element.As a result, acting on power semiconductor in temperature cycles
In the case of the entirety of device 100, because of the difference of insulating substrate 1 and the coefficient of thermal expansion of printed base plate 50, i.e. insulating substrate 1 and print
Heat that the thermal expansion difference of brush substrate 50 generates, acting on the solder 42 being present between insulating substrate 1 and printed base plate 50 is answered
Power becomes smaller compared in the past.Thus, it can especially reduce and then prevent the generation of the undesirable conditions such as the breakage in solder 42.
Also, in power semiconductor device 100, high current is flowed through in printed base plate 50 (as described above for example
100A or more), therefore generate heat and become larger in printed base plate 50.It is preferred, therefore, that avoiding making the peri position as printed base plate 50
The joint portion 54 of the bonding part of the power semiconductors element such as side copper conductor layer 53 and IGBT2 is to power semiconductor element
Temperature Distribution impacts.In addition, in the action of power semiconductor device 100, the centre of power semiconductor element
In high temperature, therefore, heat damage is easy to cause if in center configuration solder 42 and joint portion 54.Such heat is broken in order to prevent
It is bad, in the present embodiment, it is preferred that be configured at the equal power semiconductors element surfaces of IGBT 2 multiple metal film 2a,
The respective areas of 3a are identical, and electric power is equably configured in a manner of the central point 21 (Fig. 5) for avoiding power semiconductor element
With semiconductor element, joint portion 54 is accordingly configured with metal film 2a, 3a.In addition, here, it is above-mentioned it is " identical " refer to being included in
The case where ± 1% range below for desired value.
Additionally it may be desirable to by the metal film at joint portion 54 and the surface electrode for being formed in power semiconductor element
In the solder 42 that 2a and metal film 3a are engaged, chamfering is formed in order to reduce thermal stress.For this reason, it is preferred that joint portion
54 bonding area is less than each area of metal film 2a and metal film 3a.In order to reduce thermal stress, it may be desirable to solder chamfering
Angle of wetting is 45 degree or less.In the case where the height of solder 42 is such as 0.2mm to 0.8mm, pass through connecing joint portion 54
Close area be set as metal film 2a, 3a each area 20% to 80% range, the angle of wetting of chamfering can be set as 45 degree with
Under.Such as in the case where metal film 2a, 3a are 1mm square, it may be desirable to set the width for the protrusion 62 for forming joint portion 54
For 0.8mm or less.The area of metal film 2a, 3a is set to be more than the bonding area at joint portion 54 in this way, solder 42 is electric from surface
Pole forms chamfering (Fig. 7) to the trapezoidal shape in 54 side of joint portion.In addition, Fig. 7 illustrates the case where diode 3, but about IGBT
2 the case where, is also the same.
It engages, such as can also apply plate solder clip with the solder of insulating substrate 1 about power semiconductor element
Therebetween come the method etc. of the method or coating cream solder that flow back.
In addition, being engaged with the solder of printed base plate 50 about power semiconductor element, additionally it is possible to should be with the following method：It will
Plate solder it is sandwiched therebetween come flow back method, apply the method for cream solder, advance solder is engaged in electric power with partly leading
The surface electrode of volume elements part and in the method to flow back later or in the proximal side copper conductor layer 53 of printed base plate 50
Joint portion 54 engages spherical solder and in advance in the method to flow back later.
In addition, in present embodiment 1, the notch 60 with comb teeth shape as described above of joint portion 54, but from scheme
Ask reduction act on solder 42 thermal stress and reduction, prevent the generation of undesirable condition in solder 42 from the perspective of, it is unlimited
Due to comb teeth shape.Such as can be half in addition, constituting the recess portion 61 of comb teeth shape and protrusion 62 is not intended to be defined in rectangular-shaped
The arbitrary geometry shape such as circle, ellipse, triangle.Such as in the case where being as shown in Figure 8 circular shape, also have
Stress compared with the rectangular shape the case where in solder-joint parts is able to the effect mitigated.In short, as long as joint portion 54 has certain
The notch 60 of kind shape.
Here, in the case where joint portion 54 has notch 60 of arbitrary shape, also described above like that preferably to keep away
The mode for exempting from that joint portion 54 is made to impact the Temperature Distribution of power semiconductor element configures joint portion 54.
In addition, in present embodiment 1, the material that the metal substrate of insulating trip 1a will be used to be used as insulating substrate 1, still
Same effect can be also obtained using the ceramic substrate formed by ceramic materials such as AlN, aluminium oxide, SiN.
In addition, in present embodiment 1, for the surface electrode of IGBT 2 and diode, Al is used as not soak solder
Film, but can also obtain same effect using AlN, aluminium oxide, SiN, glass etc..
In addition, in present embodiment 1, PPS is used as to the material of shell 7, but uses the higher LCP (liquid of heat resistance
Crystalline polymer) it can also obtain same effect.
In addition, be diode 3 and the modular structure that IGBT 2 is a pair of 1in 1 in present embodiment 1, but two pairs
2in 1 or six couples of 6in 1 even also simultaneously equipped with the knot as converter and the power semiconductor element of brake
Structure can also obtain same effect.
In addition, in present embodiment 1, used the wire bonding (wire bond) of aluminum, but use copper line,
Or aluminium cladding copper wire or gold thread can also obtain same effect.
In addition, about direct perfusion (direct potting) sealing resin, flow into and the type of cold(-)setting it is direct
Perfusion sealing resin can also obtain same effect.
In addition, in the connection of power semiconductor element and insulating substrate 1 and printed base plate 50 and power semiconductor
Used solder in the connection of element, but use make conductive adhesive made of the dispersion in the epoxy of Ag fillers or
Person makes Ag nanometer powders or Cu nanometer powders of nano-particle low-firing etc. that can also obtain same effect.
In addition, using mold and the transfer modling that is sealed using transfer modling sealing resin without using shell 7
Also same effect can be obtained in packaging body.
Embodiment 2.
Fig. 9 and Figure 11 is the concept map of the general structure for the power semiconductor device 200 for indicating embodiment 2, Figure 10
It is the concept map for 53 side of proximal side copper conductor layer for indicating printed base plate 50.In above-mentioned embodiment 1, joint portion 54 includes
In the proximal side copper conductor layer 53 of printed base plate 50, for carrying out the electric power such as proximal side copper conductor layer 53 and IGBT 2 with partly leading
The engagement of surface electrode in volume elements part.In contrast, in the power semiconductor device 200 of embodiment 2, have and carry out
The engagement of surface electrode in the equal power semiconductors elements of the far side copper conductor layer 52 and IGBT 2 of printed base plate 50 connects
Conjunction portion 54-2.
The power semiconductor device 200 of embodiment 2 compared to embodiment 1 power semiconductor device 100 only
Different, other structures having the same in structure division related from joint portion 54-2.Thus, joint portion is mainly explained below
54-2 omits the explanation of identical structure division.
First, illustrate general content.Especially for realizing the miniaturization of power semiconductor device and cost effective,
Desirably make the power semiconductors miniaturization of components such as IGBT 2, diode 3, but need to inhibit to draw because current density is got higher
The fever risen.In general power semiconductor device, the Joule heat of power semiconductor element is being equipped with electric power with half
Conducted in the insulating substrate of conductor element, and reject heat to via Heat sink grease be connected to insulating substrate, specifically via dissipate
Hot grease is connected to the cooling fin (not shown) of the copper conductor layer 1b illustrated in the embodiment 1.In order to further increase electric power
With the thermal diffusivity of semiconductor element, effectively, not merely with to power semiconductor element back side, i.e. to cooling fin side
Heat dissipation path, also radiate from the surface side of power semiconductor element via printed base plate.
However, joint portion 54 as Embodiment 1 only since the proximal side copper conductor layer 53 of printed base plate 50 into
It goes in the case of connecting up, the high core material 51 of the thermal resistance in printed base plate 50 hinders the heat dissipation to 52 side of far side copper conductor layer, because
This heat dissipation path is only in the face of proximal side copper conductor layer 53.
Therefore, in present embodiment 2, the joint portion that is connect using the far side copper conductor layer 52 with printed base plate 50
54-2.Illustrate joint portion 54-2 below.
In the same manner as the explanation in embodiment 1, printed base plate 50 is configured to and is installed on IGBT 2 of insulating substrate 1 etc.
Power semiconductor element is opposed and parallel or substantially parallel, has core material 51, far side copper conductor layer 52 and proximal side copper
Conductor layer 53.It is located relative to for the equal power semiconductors elements of IGBT 2 here, far side copper conductor layer 52 is equivalent to
The far side conductor layer in distal side, proximal side copper conductor layer 53 are equivalent to positioned at close with power semiconductor element close proximity
Position side conductor layer.
Joint portion 54-2 is such as lower member：Overleaf from the far side copper conductor layer 52 of printed base plate 50 perforation core material 51
Side connects up, and does not extend with connecting with the proximal side copper conductor layer 53 of printed base plate 50, waits electric power to use with IGBT 2 by solder
The surface electrode of semiconductor element engages.In addition, multiple joint portion 54-2 are arranged.
Figure 12 indicates the plan view of joint portion 54-2, and shows the profit of joint portion 54-2 and such as electrode of IGBT 2
With the engagement state of solder 42.In addition, Figure 12 illustrates the case where 2 IGBT, but it is also same in the case of the electrode of diode 3
Sample.
Such joint portion 54-2 can be by making to the rear of the progress hole machined of core material 51 to hole indentation copper product
It makes.In addition, the engagement about joint portion 54-2 and the surface electrode of power semiconductor element, in the present embodiment, such as
Using engaging spherical solder to joint portion 54-2 in advance and engage in the method to flow back later.
Joint portion 54-2 is connected up from far side copper conductor layer 52 in this way, the core material 51 of printed base plate 50 causes
Thermal resistance reduce, the heat from the equal power semiconductors elements of IGBT 2 can also be diffused into printed base plate via joint portion 54-2
50 far side copper conductor layer 52.Therefore, it is possible to make the radiating efficiency of the equal power semiconductors elements of IGBT 2 compared to implementation
The case where mode 1, improves.Therefore, it is possible to reduce the fever of power semiconductor element, therefore power semiconductor can be passed through
The minimizing of element cost effective realizes the minimizing of power semiconductor device 200, cost effective.
In addition, joint portion 54-2 is segmented there are multiple, about the area of joint portion 54-2, as shown in figure 13, with
The case where joint portion 54 in embodiment 1, can similarly be set as being formed in the gold of the surface electrode of power semiconductor element
Belong to such as 20% to 80% range of the area of film 2a and metal film 3a.Therefore, because temperature cycles, because insulating substrate 1 with
Heat that the thermal expansion difference of printed base plate 50 generates, acting on the solder 42 being present between insulating substrate 1 and printed base plate 50
Stress becomes smaller compared in the past.Thus, it is particular enable to reduce and then prevent the generation of the undesirable conditions such as the breakage in solder 42.
In addition, Figure 13 illustrates the case where diode 3, but the case where 2 IGBT, is also the same.
In addition, about each material with insulating substrate 1, shell 7, wire bonding and solder illustrated in the embodiment 1
Expect related variation, variation related with power semiconductor element and variation related with sealing resin, also can
Enough it is equally applicable to the power semiconductor device 200 of present embodiment 1.
Embodiment 3.
Figure 14 to Figure 16 indicates the general structure of the power semiconductor device 300 of embodiment 3.In addition, Figure 17 extremely schemes
19 indicate the general structure of the power semiconductor device 400 of embodiment 3.
Here, power semiconductor device 300 is equivalent to the variation of the power semiconductor device 100 of embodiment 1,
Power semiconductor device 400 is equivalent to the variation of the power semiconductor device 200 of embodiment 2.
The power semiconductor device 300,400 of embodiment 3 is respectively in the printing of power semiconductor device 100,200
The gap 55 of perforation printed base plate 50 is provided in substrate 50.Power semiconductor device 300,400 is compared to electric power with partly leading
Body device 100,200 is other to have identical structure respectively only different from 55 related structure division of gap.Thus, below
Mainly illustrate gap 55, omits the explanation of identical structure division.
The insulating substrate 1 configured opposite each otherly is needed with printed base plate 50 electrically insulated from each other, it is therefore desirable to
Gap filling sealing resin 6 between insulating substrate 1 and printed base plate 50.In addition, in IGBT 2 and diode 3, in order to true
Electrical isolation distance is climbed on the surface and the back side for protecting each power semiconductor element, needs to be filled with sealing resin 6 in space.
However, insulating substrate 1 and the gap of printed base plate 50 are about 0.3mm to 0.9mm, therefore, it is difficult to fill sealing resin
6, it is possible to produce be not filled by region.Especially in the power semiconductor device 100 of such as embodiment 1, having has
The joint portion 54 of comb teeth shape.Having between the surface electrode and printed base plate 50 of the equal power semiconductors elements of IGBT 2
In the joint portion 54 of comb teeth shape, easy tos produce due to involving in air and be not filled by region.Therefore, it is necessary to take for example slow down it is close
Seal the countermeasures such as the injection rate of resin 6, it is possible to which productivity declines.As the countermeasure, effectively shorten the stream of sealing resin 6
Enter distance.
Therefore, in power semiconductor device 300, as shown in Figure 14 to Figure 16, with the electricity for being most difficult to injection sealing resin 6
The central point 21 of power semiconductor element accordingly, is provided in the core material 51 and far side copper conductor layer 52 of printed base plate 50
Gap 55.The gap 55 is the slot for penetrating through core material 51 and far side copper conductor layer 52 along its thickness direction, position as described above
In position corresponding with joint portion 54.That is, as described in Embodiment 1, the notch 60 in joint portion 54 is made to be located at
Position corresponding with the central point 21 of power semiconductor element, therefore gap 55 is located at position corresponding with notch 60.
It is to have expressed gap 55 in printed base plate 50 relative to joint portion 54 in addition, Figure 16 is figure corresponding with Fig. 5
The figure of the example of allocation position.
In power semiconductor device corresponding with power semiconductor device 200 400 (Figure 17), also with electric power with partly
Conductor device 300 is similarly, as shown in figure 19, corresponding with the gap being most difficult between each joint portion 54-2 of injection sealing resin 6
Ground is provided with multiple gaps 55 in the core material 51 of printed base plate 50.In addition, Figure 19 is figure corresponding with Figure 12, it is to express
The figure of gap 55 in printed base plate 50 relative to the allocation position of joint portion 54-2.
In addition, the variation of the power semiconductor device as the embodiment 3 with gap 55 is shown in FIG. 20
Power semiconductor device 500.Power semiconductor device 500 is equivalent to without the notch in proximal side copper conductor layer 53
60 structure there is the central point 21 with the power semiconductor element for being most difficult to injection sealing resin 6 to be correspondingly provided with multiple
The structure in gap 55.In power semiconductor device 500, gap 55 exist in surface electrode by IGBT 2 in equal with it is close
The joint portion 54 that position side copper conductor layer 53 is engaged.
By the way that gap 55 is arranged in each power semiconductor device 300,400,500, sealing resin 6 passes through gap
55, it can be to the sealing resin 6 for being possible to generate between insulating substrate 1 and printed base plate 50, particularly in joint portion 54,54-2
The region that is not filled by be filled.Therefore, it is possible to eliminate the generation for being not filled by region.Thus, it is possible to further increase resin note
Enter speed.As a result, it is possible to avoid productive decline, productivity can be improved.
In addition, by the way that gap 55 is arranged, other than above-mentioned effect, it is also easy to check and IGBT 2 by visual observation etc.
And the joint portion 54 of the surface electrode engagement of diode 3, solder 42 in 54-2 chamfering state etc..Therefore, energy is also generated
The effect of enough inspection operations for being easy to carry out engagement state in a short time.
Also there is joint portion 54,54-2 in the power semiconductor device 300,400 of present embodiment 3, therefore in reality
Thermal stress illustrating in mode 1,2, acting on caused by temperature cycles solder 42 is applied compared to becoming smaller in the past.Thus, it is special
It is not the generation that can reduce and then prevent the undesirable conditions such as the breakage in solder 42.
In addition, notch 60 is also not provided in power semiconductor device 500, but joint portion 54 has gap 55, because
This gap 55 can play the effect same with notch 60.Therefore, also it is possible to realize reductions in power semiconductor device 500
And then prevent the generation of above-mentioned undesirable condition.
In addition, each with insulating substrate 1, shell 7, wire bonding and solder about what is illustrated in embodiment 1,2
The related variation of material, variation related with power semiconductor element and variation related with sealing resin,
It can be equally applicable to the power semiconductor device 300,400,500 of present embodiment 3.
Embodiment 4.
Figure 21 and Figure 22 is the concept map of the general structure for the power semiconductor device 600 for indicating embodiment 4 respectively.
Here, power semiconductor device 600 is equivalent to the variation of the power semiconductor device 100 of embodiment 1.
The power semiconductor device 600 of embodiment 4 is set in the printed base plate 50 of power semiconductor device 100
It sets made of the core material 51 of perforation printed base plate 50 and the through hole 58 of far side copper conductor layer 52.Power semiconductor device
600 relative to power semiconductor device 100 only different from 58 related structure division of through hole, it is other have it is identical respectively
Structure.Thus, through hole 58 is mainly explained below, omits the explanation of identical structure division.
It is formed in the far side copper conductor layer 52 and 53 phase of proximal side copper conductor layer on the two sides of the core material 51 of printed base plate 50
It mutually asymmetricly configures, therefore easy tos produce the warpage caused by thermal strain or fluctuating.Therefore, in the weldering for being engaged in joint portion 54
Big thermal stress is easy tod produce in material 42.
Therefore, as shown in figure 21 and figure, whole with the joint portion 54 for engaging solder in power semiconductor device 600
Body accordingly, through hole 58 is provided in the core material 51 and far side copper conductor layer 52 of printed base plate 50.The through hole 58 is
The slot that core material 51 and far side copper conductor layer 52 are penetrated through along its thickness direction, it is whole right with joint portion 54 to be located at as described above
The position answered.
Through hole 58 is set in power semiconductor device 600 in this way, the periphery at joint portion 54 can be inhibited
It rises and falls, the thermal stress generated in solder 42 can be reduced.
In addition, by be arranged through hole 58, other than above-mentioned effect, can also in power semiconductor device
The case where gap 55 are arranged in 300 compare, it is easier to check that the surface electrode with IGBT 2 and diode 3 connects by visual observation etc.
The state etc. of the chamfering of solder 42 in the joint portion 54 of conjunction.Therefore, engagement can be easy to carry out in a short time by also generating
The effect of the inspection operation of state.
In addition, by the way that through hole 58 is arranged, sealing resin 6 by through hole 58, to insulating substrate 1 and printed base plate 50 it
Between, particularly joint portion 54 in be possible to the fillibility for being not filled by region of the sealing resin 6 generated compared in electric power with half
The case where gap 55 are arranged in conductor device 300 is improved.It is thus possible to enough eliminate the generation for being not filled by region.
Thus, it is possible to further increase resin injection rate compared to embodiment 3.As a result, it is possible to avoid productivity
Decline, productivity can be improved.
In addition, about each material with insulating substrate 1, shell 7, wire bonding and solder illustrated in the embodiment 1
Expect related variation, variation related with power semiconductor element and variation related with sealing resin, also can
Enough it is equally applicable to the power semiconductor device 600 of present embodiment 4.
In addition it is possible to using the structure for being combined above-mentioned each embodiment, in addition it is possible to by different realities
Structure division shown in mode is applied to be combined each other.
The present invention has associatedly been sufficiently carried out record with reference to attached drawing and with preferred embodiment, but for the skilled skill
Various modifications or amendment are clear for the people of art.It should be understood that such deformation or amendment are without departing from based on appended
The scope of the present invention of claims is just included therein.
In addition, the specification of Japanese patent application No. Patents 2015-229855 filed in 25 days November in 2015, attached
Figure, claims and abstract disclosure all by reference to being incorporated into this specification.
Claims (9)
- It is to have power semiconductor element and printed base plate with conductor layer and pass through 1. a kind of power semiconductor device The electricity for the state that solder is engaged the electrode of the power semiconductor element with the conductor layer of the printed base plate Power semiconductor device, the power semiconductor device be characterized in that,The film that the power semiconductor element has metal film for engaging solder and do not engaged with solder in surface electrode,Multiple metal films are configured in the power semiconductor element,The film for not engaging the solder is configured at the center of the power semiconductor element,The power semiconductor device is also equipped with the part for constituting the conductor layer and is formed as one with the conductor layer State joint portion,The joint portion has notch, which is configured to corresponding with the metal film of the semiconductor element.
- 2. power semiconductor device according to claim 1, whereinThe notch is comb teeth shape.
- 3. power semiconductor device according to claim 1 or 2, whereinMultiple metal films are respectively provided with identical area, are equally spaced located at the surface of power semiconductor element, described The protrusion of the notch of comb teeth shape is correspondingly located at equally spaced position with the metal film.
- 4. the power semiconductor device according to any one of claims 1 to 3, whereinThe protrusion of the notch of the comb teeth shape is less than the area of the metal film.
- 5. the power semiconductor device according to any one of Claims 1 to 4, whereinThe shape of the metal film is rectangle or circle.
- 6. the power semiconductor device according to any one of Claims 1 to 4, whereinThe shape of protrusion and recess portion in the comb teeth shape is rectangle or circle.
- 7. a kind of power semiconductor device has power semiconductor element and the printed base plate with conductor layer, pass through weldering Material is engaged the electrode of the power semiconductor element with the conductor layer of the printed base plate, and the electric power is with partly Conductor device is characterized in that,The printed base plate is located at the position opposed with the power semiconductor element, two sides difference in the thickness direction thereof With conductor layer,The power semiconductor device is also equipped with multiple joint portions, and the multiple joint portion is in the following state：With each institute State the far side conductor layer engagement for being located at the distal side from the power semiconductor element and the perforation printing in conductor layer Substrate is simultaneously extended in a manner of not connect with the proximal side conductor layer for the position for being located adjacent to the power semiconductor element, is led to Cross the electrode engagement of solder and the power semiconductor element.
- 8. power semiconductor device according to claim 7, whereinThe printed base plate has the gap for penetrating through the printed base plate, which is located at position corresponding with the joint portion.
- 9. power semiconductor device according to claim 7, whereinThere is the printed base plate through hole for penetrating through the printed base plate, the through hole to be located at the entire surface pair with the joint portion The position answered.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-229855 | 2015-11-25 | ||
| JP2015229855 | 2015-11-25 | ||
| PCT/JP2016/082944 WO2017090413A1 (en) | 2015-11-25 | 2016-11-07 | Power semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108292642A true CN108292642A (en) | 2018-07-17 |
| CN108292642B CN108292642B (en) | 2021-04-30 |
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| CN201680067437.4A Active CN108292642B (en) | 2015-11-25 | 2016-11-07 | Power semiconductor device |
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| Country | Link |
|---|---|
| JP (1) | JP6523482B2 (en) |
| CN (1) | CN108292642B (en) |
| DE (1) | DE112016005397B4 (en) |
| WO (1) | WO2017090413A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112638576A (en) * | 2018-12-21 | 2021-04-09 | 深圳市柔宇科技股份有限公司 | Fixing method of metal sheet and flexible display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2019167188A1 (en) * | 2018-02-28 | 2019-09-06 | 新電元工業株式会社 | Resin-sealed semiconductor device and lead frame |
| JP2023094391A (en) * | 2021-12-23 | 2023-07-05 | 新光電気工業株式会社 | Semiconductor device |
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| DE112016005397T5 (en) | 2018-08-09 |
| CN108292642B (en) | 2021-04-30 |
| JPWO2017090413A1 (en) | 2018-06-21 |
| DE112016005397B4 (en) | 2022-05-05 |
| WO2017090413A1 (en) | 2017-06-01 |
| JP6523482B2 (en) | 2019-06-05 |
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