CN108288607B - 一种增强散热的Power MOSFET及其设计方法 - Google Patents

一种增强散热的Power MOSFET及其设计方法 Download PDF

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CN108288607B
CN108288607B CN201810026112.2A CN201810026112A CN108288607B CN 108288607 B CN108288607 B CN 108288607B CN 201810026112 A CN201810026112 A CN 201810026112A CN 108288607 B CN108288607 B CN 108288607B
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于浩
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Suzhou Wave Intelligent Technology Co Ltd
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Abstract

本发明实施例公开了一种增强散热的Power MOSFET及其设计方法，所述方法包括：S1、在Power MOSFET的正面表面设置Source极的焊盘；S2、从Power MOSFET的芯片中引出引线连接至所述S1中设置的Source极焊盘；S3、对所述Power MOSFET进行封装。本发明通过在Power MOSFET的正面表面增设Source极的焊盘，实现从正面将Power MOSFET的大功率热量散发出去，保证了Power MOSFET性能的可靠性，确保了周围电子元器件的性能稳定性，同时平衡了由Drain极向Source极的电流流通，提高了电流的通过能力。

Description

一种增强散热的Power MOSFET及其设计方法
技术领域
本发明涉及计算机板卡技术领域，具体来说涉及一种增强散热的Power MOSFET及其设计方法。
背景技术
随着个人电脑的普及以及互联网和大数据技术的发展，服务器及个人电脑的应用范围越来越广，从而服务器与个人电脑的主板越来越多，同时用户对其性能要求也越来越高。在主板供电中，必然用到的部分为Power MOSFET，其主要作为电源开关使用。然而在现有的应用中，由于Power MOSFET的功率较大，且主板空间有限，使得Power MOSFET的尺寸设计不易过大，从而导致Power MOSFET的温度非常高，甚至经常超过85度。温度过高会导致Power MOSFET的通电流能力变差，影响其自身的可靠性与使用寿命，还会向其周围的零件散发热量，导致周边零件出现异常。
针对现有技术存在的问题，本发明提出一种增强Power MOSFET散热的设计方法及系统，提高主板产品的稳定性和安全性。
发明内容
本发明实施例中提供一种增强散热的Power MOSFET及其设计方法，解决现有的Power MOSFET因散热效果较差导致的性能下降及干扰周围零件正常工作的问题。
为了解决上述技术问题，本发明实施例公开了如下技术方案：
本发明第一方面提供了一种增强散热的Power MOSFET，具体包括芯片和引线，引线从芯片中引出，所述Power MOSFET的正面表面上设置有Source极的焊盘，Power MOSFET的底面设置有Drain极的焊盘，所述引线分别从芯片引出后电连接至所述Source极和Drain极的焊盘。本方案中Source极的增加增大了Source极接触空气的面积，扩大了散热面积，增强了散热效果。
基于上述方案，本产品做如下优化：
作为一种优化，所述的Power MOSFET其正面Source极的焊盘面积与底面Drain极的焊盘面积大小相适配，既保证了产品的电流流通能力，又确保了产品的散热效果。
作为一种优化，所述Power MOSFET的内腔和外围填充包裹有环氧树脂层，起到保护内部电子器件的作用。
如上所述的一种增强散热的Power MOSFET，所述Power MOSFET的底面边缘处设置有包括三个PIN的Source极和包括一个PIN的Gate极。
本发明第二方面提供了一种增强散热的Power MOSFET的设计方法，所述方法包括以下步骤：
S1、在Power MOSFET的正面表面设置Source极的焊盘；
S2、从Power MOSFET的芯片中引出引线连接至所述S1中设置的Source极焊盘；
S3、对所述Power MOSFET进行封装。
由于Power MOSFET在正常工作时，电流与功率非常大，使得整体温度急剧上升，温度上升以后，会导致Power MOSFET通过电流的能力变差，影响其自身的可靠性，甚至还会向其周围的零件散发热量影响周边零件的工作状况。本方法在Power MOSFET的正面增加Source极后，增大了Source极与空气的接触面积，极大增强了Power MOSFET的散热效果，保证了产品的性能及可靠性。
优选的，所述Power MOSFET的底面设置有Drain极的焊盘，且所述S1中设置的正面Source极的焊盘面积与底面Drain极的焊盘面积大小相适配。电流一般由Drain极流向Source极，传统的Power MOSFET封装的Drain极较为宽大，可以流通的电流上限较高，但其Source往往过于狭窄，限制了流通的电流上限，导致Power MOSFET的电流通过能力较低。本方法中通过在Power MOSFET的正面设置Source极，且Source极的焊盘面积与Drain极的焊盘面积大小适配，从而平衡了电流流通，提高了电流的通过能力。
进一步的，所述Power MOSFET的底面边缘处还设置有包括三个PIN的Source极和包括一个PIN的Gate极，从Power MOSFET的芯片中引出引线分别连接至所述Source极、Drain极和Gate极。所述S3中对Power MOSFET进行封装包括采用环氧树脂填充包裹所述Power MOSFET的外围和内腔。
本申请的实施例提供的技术方案包括以下有益效果：
本申请实施例提供的一种增强散热的Power MOSFET，与现有的产品相比，在PowerMOSFET的正面表面上增设了一个Source极的焊盘，形成一个可以直接接触到空气进行散热的焊盘，从而通过正面将Power MOSFET的大功率热量散发出去，保证了Power MOSFET性能的可靠性，确保了周围电子元器件的性能稳定性。此外，在本产品中，将Source极的焊盘面积与Drain极的焊盘面积设置为大小适配，平衡了由Drain极向Source极的电流流通，提高了电流的通过能力。
本申请实施例提供的一种增强散热的Power MOSFET的设计方法，能够设计实现出实施例中所述的产品，并取得相同的效果。
附图说明
此处的附图被并入说明书中并构成说明书的一部分，示出了符合本申请的实施例，并与说明书一起用于解释本申请的原理。
图1为本申请实施例提供的一种增强散热的Power MOSFET的正面结构示意图；
图2为图1中一种增强散热的Power MOSFET的底面结构示意图；
图3为图1中一种增强散热的Power MOSFET的内部结构示意图；
图4为本申请实施例提供的一种增强散热的Power MOSFET的设计方法流程示意图。
附图标记：1-Source极焊盘，2-Drain极焊盘，3-S-PIN，4-G-PIN，5-引线框架，6-芯片焊盘，7-引线，8-银桨，9-芯片。
具体实施方式
为了使本技术领域的人员更好地理解本发明中的技术方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。
首先，为了方便对实施例的理解，下面对实施例中涉及的缩略词和关键术语予以解释和说明。
PCB：Printed Circuit Board，印刷电路板；
MOSFET：Metal Oxide Semiconductor Field-Effect Transistor，金属氧化物半导体场效应晶体管；
PAD：PCB中的焊盘。
图1、图2分别为本申请实施例提供的一种增强散热的Power MOSFET的正面及底面示意图，图3为其内部结构示意图。由图中所示，一种增强散热的Power MOSFET，具体包括芯片9和引线5，引线5从芯片9中引出，所述Power MOSFET的正面表面上设置有Source极焊盘1，Power MOSFET的底面设置有Drain极焊盘2，引线9分别从芯片引出后电连接至所述Source极和Drain极的焊盘。本方案通过在Power MOSFET的正面增设Source极，增大了Source极接触空气的面积，扩大了散热面积。
具体而言，如上所述的Power MOSFET，其正面Source极焊盘1的面积与其底面Drain极焊盘2的面积大小相适配，起到平衡电流的作用。电流一般由Drain极流向Source极，传统的Power MOSFET中Drain极较为宽大，可流通的电流上限较高，但Source过于狭窄，限制了电流的流通上限，通过在Power MOSFET的正面设置Source极，增大了Source极的电流流通量，提高了整体的电流通过能力。Power MOSFET的底面边缘处还设置有包括三个PIN的Source极和包括一个PIN的Gate极，内部封装有芯片9、引线框架5、芯片焊盘6、引线7和银桨8，其内腔和外围填充包裹有保护内部电子器件的环氧树脂层。
图4为本申请实施例提供的一种增强散热的Power MOSFET的设计方法流程示意图，所述方法包括以下步骤：
S1、在Power MOSFET的正面表面设置Source极的焊盘；
S2、从Power MOSFET的芯片中引出引线连接至所述S1中设置的Source极焊盘；
S3、对所述Power MOSFET进行封装。
具体来说，所述Power MOSFET的底面设置有Drain极的焊盘，且所述S1中设置的正面Source极的焊盘面积与底面Drain极的焊盘面积大小相适配。现有的Power MOSFET，其背面有一个大面积的Drain极散热焊盘，能够起到较好的散热效果，但其Source极只有几个个很小面积的PIN，散热性能较差。由于Power MOSFET在正常工作时，电流与功率非常大，使得整体温度急剧上升，导致Power MOSFET通过电流的能力变差，本方法通过在Power MOSFET的正面增加Source极，增大了Source极与空气的接触面积，极大增强了Power MOSFET的散热效果。Source极的焊盘面积与Drain极的焊盘面积大小适配，平衡了电流流通，提高了电流的通过能力。
进一步的，Power MOSFET的底面边缘处还设置有包括三个PIN的Source极和包括一个PIN的Gate极，从Power MOSFET的芯片中引出引线分别连接至所述Source极、Drain极和Gate极。所述S3中对Power MOSFET进行封装包括采用环氧树脂填充包裹所述PowerMOSFET的外围和内腔。
本实施例的一种增强散热的Power MOSFET及其设计方法，通过在PowerMOSFET的正面表面增设Source极的焊盘，实现从正面将Power MOSFET的大功率热量散发出去，保证了Power MOSFET性能的可靠性，确保了周围电子元器件的性能稳定性，同时平衡了由Drain极向Source极的电流流通，提高了电流的通过能力。
以上所述仅是本发明的具体实施方式，使本领域技术人员能够理解或实现本发明。对这些实施例的多种修改对本领域的技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (6)

1.一种增强散热的Power MOSFET，包括芯片和引线，所述引线从芯片中引出，其特征在于，所述Power MOSFET的正面表面上设置有Source极的焊盘，Power MOSFET的底面设置有Drain极的焊盘，所述引线分别从芯片引出后电连接至所述Source极和Drain极的焊盘；所述Power MOSFET正面Source极的焊盘面积与底面Drain极的焊盘面积大小相适配。
2.根据权利要求1所述的增强散热的Power MOSFET，其特征在于，所述Power MOSFET的内腔和外围填充包裹有环氧树脂。
3.根据权利要求1所述的增强散热的Power MOSFET，其特征在于，所述Power MOSFET的底面边缘处设置有包括三个PIN的Source极和包括一个PIN的Gate极。
4.一种增强散热的Power MOSFET的设计方法，其特征在于，包括以下步骤：
S1、在Power MOSFET的正面表面设置Source极的焊盘；
S2、从Power MOSFET的芯片中引出引线连接至所述S1中设置的Source极焊盘；PowerMOSFET的底面设置有Drain极的焊盘，所述S1中设置的正面Source极的焊盘面积与底面Drain极的焊盘面积大小相适配；
S3、对所述Power MOSFET进行封装。
5.根据权利要求4所述的增强散热的Power MOSFET的设计方法，其特征在于，所述Power MOSFET的底面边缘处还设置有包括三个PIN的Source极和包括一个PIN的Gate极，从Power MOSFET的芯片中引出引线分别连接至所述Source极、Drain极和Gate极。
6.根据权利要求4所述的增强散热的Power MOSFET的设计方法，其特征在于，所述S3中对Power MOSFET进行封装包括采用环氧树脂填充包裹所述Power MOSFET的外围和内腔。
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CN101859755A (zh) * 2010-05-14 2010-10-13 上海凯虹科技电子有限公司 一种功率mosfet封装体及其封装方法
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