CN108281379B - Method for manufacturing substrate comprising conductive through hole - Google Patents
Method for manufacturing substrate comprising conductive through hole Download PDFInfo
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- CN108281379B CN108281379B CN201711478189.5A CN201711478189A CN108281379B CN 108281379 B CN108281379 B CN 108281379B CN 201711478189 A CN201711478189 A CN 201711478189A CN 108281379 B CN108281379 B CN 108281379B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
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Abstract
The invention discloses a method for manufacturing a substrate comprising a conductive via, comprising: manufacturing reticular support wire woven cloth and reticular lead wire support wire mixed woven cloth, wherein leads in the reticular lead wire support wire mixed woven cloth are distributed in the reticular support wire woven cloth at intervals in a mode of being arranged in parallel along at least one direction; the mesh support wire woven cloth and the mesh lead support wire mixed woven cloth are made into a three-dimensional columnar porous structure, and leads in the mesh lead support wire mixed woven cloth are fixed in the three-dimensional columnar porous structure by means of the mesh support wire woven cloth; filling a matrix material in the pores and the periphery of the three-dimensional columnar porous structure and solidifying the matrix material into a lead substrate cylinder; the conductive wire base material cylinder is divided into pieces along the direction vertical to the conductive wire to obtain the substrate containing the conductive through hole. The invention can be used for cheaply and quickly manufacturing the ceramic or glass substrate containing the conductive through holes in batches, greatly reducing the size and the interval of the conductive through holes, and the thickness of the substrate containing the conductive through holes is not limited by the size and the interval of the conductive through holes.
Description
Technical Field
The present invention relates to the field of integrated circuit semiconductor packaging technology, and more particularly, to a method for manufacturing a substrate including conductive vias. By forming the circuit and pads on the upper and lower surfaces of the substrate containing the conductive vias, the substrate containing the conductive vias can be further formed into a circuit substrate for use in an integrated circuit semiconductor package.
Background
Through-hole silicon, glass, ceramic or organic material substrates have been widely used in integrated circuit semiconductor packaging technology, and are key elements in 3D integrated circuit semiconductor packaging. Circuit substrates made based on substrates containing through-holes are commonly used in 3D and 2.5D integrated circuit semiconductor packaging technologies, and are components that integrate the functionality of electronic products. The substrate including a through-hole includes a silicon substrate including a through-hole, a glass substrate, a ceramic substrate, and an organic material substrate. Currently, the manufacturing methods of the substrate including the through-hole used can be classified into two types: one is a substrate-based approach and the other is a via-based approach. The substrate-based method basically comprises: 1) making a plurality of desired holes in the substrate, 2) filling the holes with a conductive material to form a substrate having conductive vias. The via-based method basically comprises: 1) firstly, making some small punctiform metal columns on a carrier, 2) then covering the small punctiform metal columns with a substrate material, then removing the carrier and polishing the upper surface and the lower surface to expose the small punctiform metal columns, thereby forming the substrate with the conductive through holes. At present, the conventional method is to connect the electronic components on the upper surface of the substrate with other electronic components or printed circuit boards under the substrate in the integrated circuit semiconductor package by further manufacturing the substrate with through holes through the circuit and the pads on the surface of the substrate, and the circuit on the upper surface of the substrate can also make the electronic components on the circuit communicate directly before connecting with other electronic components or circuit boards under the substrate.
A method of manufacturing a substrate including a conductive via by an opening method in the related art may be referred to as a microscopic method, and the basic features of the substrate including a conductive via manufactured by the method include: 1) the upper and lower surfaces of the substrate are flat for further fabrication of circuits and pads thereon; 2) vias are electrically conductive metal pillars embedded in the substrate and arranged in a regular array at a desired pitch, 3) the base material of the substrate serves as a carrier for holding the vias and for further fabrication of circuits and pads thereon. It is noted that these prior art microscopic methods of fabricating substrates containing conductive vias have many limitations in fabrication and use. Some limitations include, due to their manufacturing process: 1) the fabrication of which is very time consuming and expensive, 2) wherein the metal pillars or vias do not contain an insulating outer layer, 3) the vias cannot be very small in diameter due to being drilled by etching, mechanical drilling or laser, 5) the vias cannot be very small in pitch, as is the case with prior art substrates that are less than 10 microns thick and exceed a certain thickness (e.g., 100 microns or more), 6) the thickness of the substrate containing the vias is limited by the size and pitch of the vias, the smaller the via pitch, the thinner the substrate.
Another type of method for manufacturing a substrate containing conductive vias by macroscopic methods in the prior art includes the following two schemes. One of the solutions is a method of manufacturing a base material pillar containing a wire by stacking a sheet-like base material containing a wire, and then cutting the sheet-like base material into a sheet to manufacture a substrate containing a conductive through-hole; and the other scheme is a method for manufacturing a substrate cylinder containing the conducting wire through the conducting wire framework body and then cutting the substrate cylinder into slices to manufacture the substrate containing the conducting through holes. Both macroscopically observed methods have certain disadvantages in practical applications. Among them, the first solution has a disadvantage in that it is difficult to apply to ceramic or glass substrates. One reason for this is that it is very expensive to make sheet-like green ceramic or glass ribbons containing wires, especially for very thin green ceramic or glass ribbons, this macroscopic approach is of no significance when the manufacturing costs are not very advantageous compared to the microscopic approach; the second reason, and more importantly, is that interlayer cracking is a difficult problem to overcome when sintering a columnar ceramic green body formed by stacking at least hundreds to thousands of sheet-like green ceramic tapes containing a conductive wire. The method of the second embodiment, however, has a great disadvantage that it is difficult to ensure that the very thin and long wires are not moved or damaged when the lead frame is filled with the ceramic slurry, because the base material is a single body rather than stacked sheets. In summary, although the former substrate column is formed by stacking sheet-like substrates and the latter substrate column is formed by filling at one time, both substrate columns have technical defects.
Disclosure of Invention
In view of the above technical problems, the present invention provides a novel method for manufacturing a substrate including a conductive via. The method mainly comprises the following steps:
manufacturing a reticular support wire woven cloth and a reticular lead wire support wire mixed woven cloth, wherein leads in the reticular lead wire support wire mixed woven cloth are distributed in the reticular lead wire support wire mixed woven cloth at intervals in a mode of being arranged in parallel along at least one direction;
manufacturing a reticular supporting wire woven cloth and a reticular conducting wire supporting wire mixed woven cloth into a three-dimensional columnar porous structure, wherein conducting wires in the reticular conducting wire supporting wire mixed woven cloth are fixed in the three-dimensional columnar porous structure through the reticular supporting wire woven cloth;
filling a matrix material in the pores and the periphery of the three-dimensional columnar porous structure, and solidifying the three-dimensional columnar porous structure into an integral wire substrate column through set conditions;
the conductive wire substrate cylinder is divided into pieces along a direction perpendicular to the conductive wire, and a substrate including conductive through holes is obtained.
According to an embodiment of the present invention, the method may further include the steps of:
covering an insulating layer on the upper surface and the lower surface of the substrate containing the conductive through hole respectively;
forming a plurality of pairs of aligned holes with the same size at opposite positions of the two insulating layers, and enabling a substrate area below the two holes of each pair of holes to be provided with at least one conductive through hole;
covering the conductive layers in the two openings of each pair of holes respectively, so that the conductive layers in the two openings can form a conductive channel through the conductive through hole below, thereby obtaining the substrate containing the redistribution conductive through hole.
According to another embodiment of the present invention, the above method may further include the steps of:
covering sheet metal at the opposite positions of the upper surface and the lower surface of the substrate containing the conductive through holes to form a plurality of pairs of sheet metal pairs which are equal in size and mutually aligned, and enabling the substrate area below two sheet metals of each pair of sheet metal pairs to be provided with at least one conductive through hole;
covering the upper surface and the lower surface of the substrate covered with the sheet metal pair with insulating layers respectively;
and forming holes at the positions of the two insulating layers corresponding to the sheet metal pairs to expose partial areas of the two sheet metals of each pair of sheet metals, so that the exposed parts of the two sheet metals of each pair of sheet metals form a conductive channel through the underlying conductive through hole, thereby obtaining the substrate containing the redistribution conductive through hole.
According to an embodiment of the present invention, in the above method, the three-dimensional columnar porous structure may be formed by laminating a plurality of pieces of mesh-like supporting wire woven cloth and a plurality of pieces of mesh-like wire supporting wire woven cloth, wherein adjacent two pieces of mesh-like wire supporting wire woven cloth are separated by at least one piece of mesh-like supporting wire woven cloth.
According to another embodiment of the present invention, in the above method, the three-dimensional columnar porous structure may be formed by stacking a long strip-shaped mesh-like support wire woven fabric and a long strip-shaped mesh-like wire support wire woven fabric into a double-layered mesh-like long strip, and then rolling the double-layered mesh-like long strip into a multi-layered cylindrical body.
Further, the three-dimensional columnar porous structure can be manufactured by stacking a long strip-shaped mesh support wire woven cloth and a long strip-shaped mesh wire support wire woven cloth into a double-layer mesh long strip, and then rolling the double-layer mesh long strip around a column core into a multi-layer structure column.
According to an embodiment of the present invention, in the above method, a ceramic slurry capable of low-temperature sintering may be employed as a base material, thereby obtaining a ceramic substrate including a conductive via.
According to another embodiment of the present invention, in the above method, a silicon powder material capable of being nitrided into a silicon nitride ceramic under specified conditions may be employed as a base material, thereby obtaining a silicon nitride ceramic substrate including a conductive via.
According to another embodiment of the present invention, in the above method, a metal substrate including a conductive via may be manufactured using a metal wire with an insulating outer layer as a conductive wire and a metal material as a base material.
Furthermore, according to an embodiment of the present invention, the above method may further include the steps of:
and manufacturing circuits and pads on the substrate containing the redistribution conductive through holes, thereby manufacturing the circuit substrate for chip packaging.
One or more embodiments of the present invention may have the following advantages over the prior art:
1) the ceramic or glass substrate containing the conductive through-hole can be inexpensively and quickly mass-produced;
2) the size of the conductive vias and their spacing can be very small;
3) the thickness of the substrate including the conductive via is not limited by the size of the conductive via and the pitch thereof and can be arbitrarily selected as desired.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a flow chart of a method for manufacturing a substrate including a conductive via in a first embodiment of the present invention;
FIG. 2 is a schematic view of a woven fabric of mesh-shaped supporting wires and a woven fabric of mesh-shaped supporting wires, which are used in the first embodiment of the present invention;
FIG. 3 is a schematic view of a braided wire support of a mesh type including a plurality of wires in a transverse direction in addition to the wires in a longitudinal direction according to the first embodiment of the present invention;
FIG. 4 is a schematic view of a three-dimensional cylindrical porous structure formed by a woven cloth of mesh wire supporting wires and a woven cloth of mesh supporting wires according to the first embodiment of the present invention;
FIG. 5 is a schematic view showing a method of manufacturing a three-dimensional columnar porous structure by laminating a plurality of woven wire support threads and a plurality of woven wire support threads in a first embodiment of the present invention;
FIG. 6 is a schematic view showing a method of manufacturing a three-dimensional columnar porous structure by winding a double-layered long tape comprising a long tape-shaped mesh-like woven fabric of supporting wires and a long tape-shaped mesh-like woven wire supporting wire in a mixed manner according to the first embodiment of the present invention;
FIG. 7 is a schematic view of a first embodiment of the present invention, in which the pores and the periphery of the three-dimensional columnar porous structure are filled with a matrix material, and the matrix material is solidified into a monolithic substrate by set conditions, so as to form a conductive wire substrate column, which is further divided along a direction perpendicular to the conductive wire;
FIG. 8 is a schematic view of a plurality of substrates with conductive vias made in accordance with a first embodiment of the present invention;
fig. 9 is a flow chart of a method of fabricating a substrate with redistributed conductive vias based on the substrate with conductive vias of the first embodiment in a second embodiment of the invention;
FIG. 10 is a diagram of a method of fabricating a substrate with redistributed conductive vias based on a substrate with conductive vias in a second embodiment of the invention;
fig. 11 is a flow chart of a method of fabricating a substrate with redistributed conductive vias based on the substrate with conductive vias of the first embodiment in a third embodiment of the invention;
fig. 12 is a schematic diagram of a method for manufacturing a substrate with redistributed conductive vias based on a substrate with conductive vias according to a third embodiment of the invention.
Detailed Description
The following detailed description of the embodiments of the present invention will be provided with reference to the drawings and examples, so that how to apply the technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented. It should be noted that, as long as there is no conflict, the embodiments and the features of the embodiments of the present invention may be combined with each other, and the technical solutions formed are within the scope of the present invention.
As previously mentioned, the challenge in implementing this technique is to fill the lead frame body with a matrix material without moving or damaging the very thin metal wires in the lead frame body. In view of the above challenges, the present invention provides a new method for manufacturing a conductive wire substrate cylinder based on a support wire woven fabric and a conductive wire support wire woven fabric, and further a substrate with a conductive via is manufactured. The method for manufacturing the lead substrate cylinder comprises the following key steps: firstly, manufacturing a three-dimensional porous columnar structure by weaving netted supporting wire cloth and weaving netted conducting wire supporting wire cloth in a mixed mode, wherein a plurality of conducting wires are distributed in the three-dimensional columnar porous structure in a unilaterally flat mode through the netted conducting wire supporting wire cloth in the mixed mode; then filling a base material in the pores and the periphery of the three-dimensional columnar porous structure, and solidifying the base material into a whole through a set condition so as to prepare a lead base material cylinder; then, the conductor substrate cylinder is divided into pieces to manufacture a plurality of substrates containing conductive through holes.
The key inventive concept is to utilize the mesh support wire woven cloth and the mesh wire support wire mixed woven cloth to manufacture a three-dimensional porous columnar structure, and fix the wires which are arranged in parallel in the three-dimensional porous columnar structure, thereby avoiding moving or damaging the very thin wires when filling the base material.
In order to clearly illustrate the embodiments of the present invention by referring to the accompanying drawings, some of the terms used are first explained as follows: 1) the reticular support wire knitted cloth represents a cloth knitted by support wires, and pores are left between the central wires and the wires, so that the reticular support wire knitted cloth is not densely knitted; 2) the support wire, which may be a non-conductive wire such as a glass fiber wire, a carbon fiber wire or a plastic wire, is referred to herein as a support wire because its function in the present invention is merely an auxiliary function for supporting and fixing the wire; 3) the reticular wire support line mixed woven cloth represents a cloth formed by mixed weaving of support lines and wires, wherein pores are reserved between the lines, and dense weaving is not adopted; 4) conductive vias, which represent conductive paths embedded in the substrate and penetrating through the thickness direction of the substrate, such as columnar metals; 5) a redistribution conductive via representing a conductive channel formed from a piece of metal on the upper surface of the substrate containing the conductive via connected to a piece of metal on the lower surface of the substrate via a portion of the conductive via; 6) a substrate, which represents a sheet material, such as a sheet of ceramic, a sheet of glass, a sheet of wafer, or a sheet of polymeric material; 7) matrix materials, which represent the materials used to make the matrix of the composite structure, may be a slurry or a powder prior to curing. It is to be noted that the above terms are explained for the purpose of illustration only, and do not limit the scope and spirit of the present invention.
First embodiment
Fig. 1 is a flowchart of a method for manufacturing a substrate including a conductive via in a first embodiment of the present invention. As shown in fig. 1, the following steps S101 to S104 may be included. A method for manufacturing a substrate including a conductive via will be specifically described below with reference to fig. 2.
In step S101, a mesh-shaped supporting wire woven fabric and a mesh-shaped wire supporting wire mixed woven fabric are manufactured, wherein wires in the mesh-shaped wire supporting wire mixed woven fabric are distributed at intervals in the mesh-shaped wire supporting wire mixed woven fabric in such a manner that the wires are arranged in parallel along at least one direction. In this embodiment, the mesh support wire woven fabric and the mesh wire support wire mixed woven fabric manufactured by this step can be as shown in fig. 2. Reference numeral 1000 in fig. 2 indicates a mesh wire support wire mixed woven fabric, and 2000 indicates a mesh support wire woven fabric; wherein reference numerals 110 and 120 represent support lines in the cross direction and the longitudinal direction in the mesh-type wire support line co-woven fabric, respectively, 130 represent wires arranged in parallel in the longitudinal direction in the mesh-type wire support line co-woven fabric, and 210 and 220 represent support lines in the cross direction and the longitudinal direction in the mesh-type wire support line co-woven fabric, respectively; it should be noted that in the mesh-like woven wire supporting wire hybrid fabric shown in fig. 1000, supporting wires are woven along the longitudinal direction, and alternatively, only conducting wires are used in the longitudinal direction. In addition, the size of the mesh in the mesh-type woven fabric and the hybrid fabric can be set according to the thickness of the support wires and the lead wires and the ease of filling the base material.
Alternatively, the embodiment may also use a mesh wire supporting wire mixed woven cloth 9000A shown in fig. 3, which includes some wires arranged in the transverse direction in addition to the wires arranged in the longitudinal direction, where the wires arranged in the longitudinal direction and the transverse direction as shown by reference numerals 910A and 900A form a mesh wire structure, where the two wires may be different, for example, the wire 900A is a strip wire, and the wire 910A is a round wire; the mesh-shaped wire supporting line mixed woven cloth 9000A can be further added with a mesh-shaped wire structure in the wire base material cylinder and the substrate containing the conductive through hole, so that the wire base material cylinder containing the mesh-shaped wire structure and the substrate containing the conductive through hole containing the mesh-shaped wire structure are manufactured, and some special requirements in the electronic product packaging development are met.
In step S102, a mesh-shaped supporting wire knitted fabric and a mesh-shaped wire supporting wire mixed knitted fabric are manufactured into a three-dimensional cylindrical porous structure, wherein the wires in the mesh-shaped wire supporting wire mixed knitted fabric are fixed in the three-dimensional cylindrical porous structure by the mesh-shaped supporting wire knitted fabric. In this step, a three-dimensional porous cylindrical structure is fabricated using a mesh support wire woven fabric and a mesh wire support wire woven fabric, so that wires arranged in parallel to each other are fixed in the cylindrical porous structure, thereby preventing the very thin wires from being moved or damaged when a base material is filled.
In this embodiment, the three-dimensional columnar porous structure produced by this step may be as shown in fig. 4. 3000 in fig. 4 shows a three-dimensional cylindrical porous structure made by a mesh wire supporting wire mixed woven cloth and a mesh supporting wire woven cloth, wherein 300 represents a plurality of wires arranged and fixed in parallel in a single direction in said three-dimensional cylindrical porous structure, and distributed in said three-dimensional cylindrical porous structure 3000 in a flat line in a single direction by said mesh wire supporting wire mixed woven cloth 1000.
Preferably, the three-dimensional columnar porous structure is made by laminating a plurality of pieces of mesh support wire woven cloth and a plurality of pieces of mesh wire support wire mixed woven cloth, wherein two adjacent pieces of mesh wire support wire mixed woven cloth are separated by at least one piece of mesh support wire woven cloth. The three-dimensional cylindrical porous structure can be shown in fig. 5, wherein a number symbol 8000 and an arrow 800 indicate that a plurality of pieces of mesh support wire woven cloth and a plurality of pieces of mesh wire support wire mixed woven cloth are laminated together to form a three-dimensional cylindrical porous structure, two adjacent layers of mesh wire support wire mixed woven cloth are separated by at least one layer of mesh support wire woven cloth, as shown by the mesh support wire woven cloth represented by the number symbol 810 and the mesh wire support wire mixed woven cloth represented by the number symbol 820, so as to ensure the mutual insulation between the wires.
Preferably, the three-dimensional columnar porous structure is manufactured by stacking a long strip-shaped mesh-shaped support wire woven cloth and a long strip-shaped mesh-shaped wire support wire woven cloth into a double-layer mesh-shaped long strip, and then rolling the double-layer mesh-shaped long strip into a multi-layer structure cylinder. As shown in fig. 6, wherein reference numeral 9000 illustrates a method of fabricating a three-dimensional columnar porous structure: first, a long strip-shaped net-shaped supporting wire braid 910 and a long strip-shaped net-shaped conducting wire supporting wire braid 920 are stacked as a net-shaped double-layer long strip 900 as indicated by an arrow 9A, and then the net-shaped double-layer long strip 900 is rolled into a multi-layered three-dimensional cylindrical porous structure as indicated by an arrow 9B as indicated by a rolling arrow 9B, and a numeral 930 indicates the shape of the cross section thereof, wherein the numeral 900A indicates the net-shaped double-layer long strip 900 after being rolled into a cylindrical shape.
Preferably, the three-dimensional columnar porous structure is manufactured by stacking a long strip-shaped mesh-shaped support wire woven fabric and a long strip-shaped mesh-shaped wire support wire woven fabric into a double-layer mesh-shaped long strip, and then rolling the double-layer mesh-shaped long strip around a column core into a multi-layer structured column. As shown in fig. 6, the three-dimensional columnar porous structure can also be made by rolling the double-layered web 900 around a cylindrical core indicated by reference numeral 901A to form a multi-layered column 930A including a cylindrical core 901A, wherein the material of the cylindrical core 901A and the structure thereof can be selected and designed as desired, for example, the cylindrical core 901A is a ceramic cylinder including wires arranged in parallel in the direction of the column. It is noted that the schematic diagrams 930 and 930A illustrate a square three-dimensional cylindrical porous structure formed by rolling the net-like double-layer long strip 900; and the three-dimensional columnar porous structure with other shapes, such as a circular three-dimensional columnar porous structure, can also be rolled according to the requirement, so that the wire substrate cylinder is manufactured.
In step S103, the pores and the periphery of the three-dimensional columnar porous structure are filled with a matrix material and cured into an integral conductor substrate column by a set condition. In this embodiment, the pillar structure of the wire substrate manufactured by this step can be as shown in fig. 7. In fig. 7, 4000 shows that the pores and the periphery of the three-dimensional columnar porous structure 3000 are filled with a matrix material, and the matrix material is cured into a monolithic matrix material under the set conditions, that is, the three-dimensional columnar porous structure 3000 is sealed in the matrix material, so as to form a lead matrix column 4000. Wherein numeral 400 represents a base material, 410 represents the three-dimensional columnar porous structure, an arrow 430 represents a direction of cutting the columnar body, and numeral 403 represents a plurality of wires arranged in parallel in a unidirectional direction, which are also the wires 300 in fig. 3, which are embedded in the base material 400; the filled matrix material can adopt fluid polymer material, ceramic slurry capable of being sintered at low temperature, silicon powder or metal material with low melting point according to the requirement; for different filling materials, different conditions can be used to cure the filling material, for example, for low temperature sinterable ceramic slurry, the solvent is evaporated at about 300 ℃ and then sintered at about 900 ℃, and for silicon powder, the silicon powder can be nitrided into silicon nitride ceramic at about 1200 to 1400 ℃ in a nitrogen environment
In step S104, the wire base material cylinder is divided into pieces in a direction perpendicular to the wires, obtaining a substrate including conductive vias. In this embodiment, the substrate including the conductive via manufactured by this step may be as shown in fig. 8. Fig. 8, 5000, illustrates the cutting of the conductive wire substrate pillars, 4000, of fig. 7, to produce a plurality of conductive via-containing substrates 500, wherein reference numeral 510 represents the conductive vias created by the conductive wires, and 520 represents the support wires remaining in the matrix, since the support wires are non-conductive wires, such as fiberglass wires, which do not affect the electrical properties of the conductive via-containing substrates.
It should be noted that fig. 2, 4, 7, and 8 illustrate only one embodiment of the present invention. The following further illustrates some specific cases of the practical application of the embodiment:
the first example is: weaving cloth by using a reticular supporting wire with the thickness of about 100 microns, wherein the diameter of the supporting wire is 100 microns, and the length and the width of a mesh hole are about 1 mm; using a woven wire support wire cloth of approximately 20 microns thick, wherein the support wire and the wires have a diameter of 20 microns, the wires are spaced at a pitch of 100 microns, and the mesh openings have lengths in the longitudinal and transverse directions of approximately 1 mm and 100 microns, respectively; the supporting wire material adopts glass fiber wires, the conducting wire material adopts copper wires, and the filling material is ceramic slurry capable of being sintered at low temperature. This arrangement allows the production of a conductive via-containing ceramic substrate having a conductive via pitch of about 100 microns and a conductive via diameter of 20 microns.
The second example is: in the first example, the copper wire is replaced by a copper wire with a glass or ceramic outer layer, and the filler material is replaced by a low-melting-point metal aluminum, with the same other parameters. The aluminum substrate with the conductive through holes, which is arranged in such a way that the pitch of the conductive through holes is about 100 micrometers and the diameter of the conductive through holes is 20 micrometers, can be manufactured, and can be used in electronic packages requiring high heat dissipation capacity.
The third example is: in the first example, the copper wire used was replaced with a copper wire with a glass outer layer, and the filler material was replaced with a low melting point metal, aluminum, with the same other parameters. The aluminum substrate with the conductive through holes, which is arranged in such a way that the pitch of the conductive through holes is about 100 micrometers and the diameter of the conductive through holes is 20 micrometers, can be manufactured, and can be used in electronic packages requiring high heat dissipation capacity.
The fourth example is: the filler used in the first example was replaced by silica powder or silica powder slurry, and the other parameters were the same. The silicon nitride ceramic substrate containing the conductive through holes and provided with the conductive through holes, wherein the pitch of the conductive through holes is about 100 micrometers, and the diameter of the conductive through holes is 20 micrometers, can be manufactured, and can be used in electronic product packages needing small thermal expansion coefficients and good heat dissipation capacity.
It should be noted that various parameters in the method for manufacturing a substrate with conductive through holes of the present invention, such as the material and thickness of the supporting wires, the material and type of the conducting wires, the mesh size of the mesh-woven cloth, the type of the base material, etc., can be flexibly adopted as required to manufacture the desired substrate with conductive through holes.
The method for manufacturing a substrate including conductive vias according to the present embodiment is advantageous in that a ceramic or glass substrate including conductive vias can be inexpensively and quickly mass-produced; the size of the conductive vias and their spacing can be very small; the thickness of the substrate including the conductive via is not limited by the size of the conductive via and the pitch thereof and can be arbitrarily selected as desired.
Second embodiment
Fig. 9 is a flow chart of a method of fabricating a substrate with redistributed conductive vias based on the substrate with conductive vias of the first embodiment in a second embodiment of the invention. As shown in fig. 9, the following steps 6A to 6C may be included. A method for manufacturing a substrate having redistributed conductive vias based on the substrate having conductive vias of the first embodiment is described in detail below with reference to fig. 10.
In step 6A, the upper and lower surfaces of the substrate including the conductive via are covered with insulating layers, respectively. As shown in fig. 10, reference numeral 600 represents a substrate containing a conductive via, which includes upper and lower surfaces, and the step shown by arrow 6A is intended to cover insulating layers 611 and 611A on the upper and lower surfaces of the substrate 600 containing a conductive via 601, 611A represents an insulating layer covered on the lower surface or the back surface, and 610 represents the substrate 600 containing a conductive via covered with an insulating layer 611/611A.
In step 6B, holes are opened at opposite positions of the two insulating layers, pairs of holes of the same size and aligned with each other are formed, and the substrate area under the two openings of each pair of holes has at least one conductive through hole. In the present embodiment, as shown in fig. 10, the step shown by the arrow 6B indicates that a hole 621/621A is opened in the insulating layer 611/611A, so that one hole 621A in the upper surface corresponds to one hole 621A in the lower surface, and a pair of mutually aligned holes 621/621A of equal size is formed, where the numeral 622 indicates at least one conductive via exposed after opening in the insulating layer 611 and covering the lower surface thereof, and 620 represents a substrate with a conductive via having a plurality of pairs of holes 621/621A opened in the insulating layer 611.
In step 6C, the two openings of each pair of holes are covered with conductive layers respectively, so that the conductive layers in the two openings can form conductive channels via the underlying conductive vias, thereby obtaining a substrate comprising redistributed conductive vias. As shown in fig. 10, the step shown by the arrow 6C is to cover the conductive layer 631/631A in the hole 621/621A, and corresponding to each pair of holes 621/621A, a conductive path is formed from the conductive layer 631 in the upper surface hole 621 to the conductive layer 631A in the lower surface hole 621A via the conductive via 622 connecting them, that is, a conductive path from 631 via 622 to 631A is called a redistribution conductive via, thereby manufacturing the substrate 630 with redistribution conductive vias. Circuit substrates for chip packaging can be further fabricated by fabricating circuits and pads thereon by conventional methods based on the substrate containing the redistributed conductive vias.
It should be noted that the position of the conductive via in the substrate containing the conductive via manufactured by the macroscopic method is difficult to be arbitrarily and precisely located, and the position of the conductive via must be precisely located in the application of the chip package. The method for manufacturing the substrate with the redistributed conductive through holes based on the substrate with the conductive through holes can effectively solve the problem, the position of the redistributed conductive through holes can be accurately positioned according to the requirement, but the density and the spacing of the redistributed conductive through holes are limited by the density of the conductive through holes and the diameters of the conductive through holes, roughly speaking, the density of the redistributed conductive through holes is about 4 times smaller than the density of the conductive through holes, namely 4 conductive through holes can generate one redistributed conductive through hole, the spacing between the adjacent redistributed conductive through holes is larger than the diameter of the conductive through holes, in the practical application, the substrate with the redistributed conductive through holes, the spacing of which is about 200 microns, can be manufactured based on the substrate with the conductive through holes, the spacing of which is 100 microns, this can substantially meet the needs of current chip packaging.
Third embodiment
Fig. 11 is a flow chart of a method of fabricating a substrate with redistributed conductive vias based on the substrate with conductive vias of the first embodiment in a third embodiment of the invention. As shown in fig. 11, the following steps 7A to 7C may be included. A method of manufacturing a substrate 7000 having redistributed conductive vias based on the substrate having conductive vias in the first embodiment will be specifically described below with reference to fig. 12.
In step 7A, sheet metal is covered at the opposite positions of the upper surface and the lower surface of the substrate containing the conductive through holes, a plurality of pairs of sheet metal pairs with equal size and mutually aligned are formed, and at least one conductive through hole is arranged in the substrate area below the two sheet metals of each pair of sheet metal pairs. As shown in fig. 12, reference numeral 700 denotes a substrate including a conductive via 701, which includes upper and lower surfaces, and the step shown by the arrow 7A is intended to cover the upper and lower surfaces of the substrate including a conductive via with a sheet metal 711/711 a; each sheet metal 711 in the upper surface corresponds to one sheet metal 711A in the lower surface, forming a plurality of pairs 711/711A, 710 of equal size aligned with each other representing the conductive via 701-containing substrate 700 covered with pairs 711/711A of sheet metals.
In step 7B, the upper and lower surfaces of the substrate covered with the pair of sheet metals are covered with insulating layers, respectively. As shown in fig. 12, the step shown by the arrow 7B is to cover the upper and lower surfaces of the sheet metal-covered substrate 710 with an insulation 721/721 a.
In step 7C, holes are opened at positions of the two insulating layers corresponding to the sheet metal pairs to expose partial areas of the two sheet metals of each pair of sheet metals, so that the exposed parts of the two sheet metals of each pair of sheet metals form conductive channels via the underlying conductive vias, thereby obtaining a substrate including redistributed conductive vias. As shown in fig. 12, the step shown by arrow 7C schematically corresponds to the pair of sheet metals 711/711A, 731/731A is opened in the insulating layer 721/721A so that each hole 731/731A falls within the range of the sheet metal, and for each pair of sheet metals 711/711A, a conductive via is formed from the exposed metal 731 in the upper surface hole 731 to the exposed metal 731A in the lower surface hole via a conductive via connecting them (i.e., a portion of the conductive via covered by the pair of sheet metals 711/711A, and further, reference numeral 731/731A also represents the exposed metal in the corresponding hole), i.e., a conductive via is connected from the metal 731 to the metal 731A via a portion of the conductive via, which is called a redistribution conductive via, thereby forming a substrate having conductive vias.
Preferably, the circuit substrate for chip packaging can be further manufactured by fabricating circuits and pads thereon by conventional methods based on the substrate containing the redistributed conductive vias.
It should be noted that the position of the conductive via in the substrate containing the conductive via manufactured by the macroscopic method is difficult to be arbitrarily and precisely located, and the position of the conductive via must be precisely located in the application of the chip package. The method for manufacturing the substrate with the redistributed conductive through holes based on the substrate with the conductive through holes can effectively solve the problem, the position of the redistributed conductive through holes can be accurately positioned according to the requirement, but the density and the spacing of the redistributed conductive through holes are limited by the density of the conductive through holes and the diameters of the conductive through holes, roughly speaking, the density of the redistributed conductive through holes is about 4 times smaller than the density of the conductive through holes, namely 4 conductive through holes can generate one redistributed conductive through hole, the spacing between the adjacent redistributed conductive through holes is larger than the diameter of the conductive through holes, in the practical application, the substrate with the redistributed conductive through holes, the spacing of which is about 200 microns, can be manufactured based on the substrate with the conductive through holes, the spacing of which is 100 microns, this can substantially meet the needs of current chip packaging.
It is further understood that the foregoing description of the present invention with reference to the examples and drawings is illustrative only and is not intended to limit the spirit and scope of the invention, which the skilled artisan can modify to equivalent embodiments.
Claims (10)
1. A method for manufacturing a substrate comprising conductive vias, comprising the steps of:
manufacturing a reticular support wire woven cloth and a reticular conducting wire support wire mixed woven cloth, wherein conducting wires in the reticular conducting wire support wire mixed woven cloth are distributed in the reticular conducting wire support wire mixed woven cloth at intervals in a mode of being arranged in parallel along two directions;
manufacturing a three-dimensional cylindrical porous structure by weaving a mesh supporting wire woven cloth and a mesh conducting wire supporting wire mixed woven cloth, wherein conducting wires in the mesh conducting wire supporting wire mixed woven cloth are fixed in the three-dimensional cylindrical porous structure by the mesh supporting wire woven cloth;
filling a matrix material in the pores and the periphery of the three-dimensional columnar porous structure, and curing the matrix material into an integral lead substrate column through set conditions;
and dividing the lead base material cylinder into pieces along the direction vertical to the leads to obtain the substrate containing the conductive through holes.
2. The method for manufacturing a substrate including a conductive via according to claim 1, further comprising the steps of:
covering an insulating layer on the upper surface and the lower surface of the substrate containing the conductive through hole respectively;
forming a plurality of pairs of aligned holes with the same size at opposite positions of the two insulating layers, and enabling a substrate area below the two holes of each pair of holes to be provided with at least one conductive through hole;
covering the conductive layers in the two openings of each pair of holes respectively, so that the conductive layers in the two openings can form a conductive channel through the conductive through hole below, thereby obtaining the substrate containing the redistribution conductive through hole.
3. The method for manufacturing a substrate including a conductive via according to claim 1, further comprising the steps of:
covering sheet metal at the opposite positions of the upper surface and the lower surface of the substrate containing the conductive through holes to form a plurality of pairs of sheet metal pairs which are equal in size and mutually aligned, and enabling the substrate area below two sheet metals of each pair of sheet metal pairs to be provided with at least one conductive through hole;
covering the upper surface and the lower surface of the substrate covered with the sheet metal pair with insulating layers respectively;
and forming holes at the positions of the two insulating layers corresponding to the sheet metal pairs to expose partial areas of the two sheet metals of each pair of sheet metals, so that the exposed parts of the two sheet metals of each pair of sheet metals form a conductive channel through the underlying conductive through hole, thereby obtaining the substrate containing the redistribution conductive through hole.
4. The method for manufacturing a substrate including conductive through-holes according to claim 1, wherein the three-dimensional columnar porous structure is produced by laminating a plurality of pieces of mesh-like supporting wire woven cloth and a plurality of pieces of mesh-like wire supporting wire woven cloth, wherein adjacent two pieces of mesh-like wire supporting wire woven cloth are separated by at least one piece of mesh-like supporting wire woven cloth.
5. The method for manufacturing a substrate including conductive through-holes according to claim 1, wherein the three-dimensional columnar porous structure is manufactured by laminating a long strip-shaped woven cloth of mesh-like support wires and a long strip-shaped woven cloth of mesh-like support wires into a double-layered mesh long strip, and then rolling the double-layered mesh long strip into a column of a multilayer structure.
6. The method for manufacturing a substrate including a conductive via according to claim 1,
the three-dimensional columnar porous structure is prepared by mixing and weaving long-strip-shaped reticular support wire woven cloth and long-strip-shaped reticular lead wire support wire woven cloth to form a double-layer reticular long strip, and then rolling the double-layer reticular long strip around a column core to form a multi-layer-structure column.
7. The method for manufacturing a substrate including a conductive via according to claim 1, wherein a ceramic slurry capable of low-temperature sintering is used as a base material, thereby obtaining a ceramic substrate including a conductive via.
8. The method for manufacturing a substrate containing a conductive via according to claim 1, wherein a silicon powder material capable of being nitrided into a silicon nitride ceramic under specified conditions is employed as a base material, thereby obtaining a silicon nitride ceramic substrate containing a conductive via.
9. The method for manufacturing a substrate including a conductive via according to claim 1,
the metal substrate including the conductive via is manufactured using a metal wire with an insulating outer layer as a conductive wire and a metal material as a base material.
10. The method for manufacturing a substrate including a conductive via according to claim 3 or 4, further comprising the steps of:
and manufacturing circuits and pads on the substrate containing the redistribution conductive through holes, thereby manufacturing the circuit substrate for chip packaging.
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| TW569655B (en) * | 2001-08-30 | 2004-01-01 | Nitto Denko Corp | Method for manufacturing anisotropically conductive connector |
| JP2005116183A (en) * | 2003-10-02 | 2005-04-28 | Lintec Corp | Forming method of anisotropic conductive film |
| CN103228105A (en) * | 2012-01-12 | 2013-07-31 | 揖斐电株式会社 | Wiring board and method for manufacturing the same |
| CN104362100A (en) * | 2014-10-15 | 2015-02-18 | 申宇慈 | Functional substrate and functional substrate manufacturing method |
| JP2015170784A (en) * | 2014-03-10 | 2015-09-28 | 大日本印刷株式会社 | Wiring board, manufacturing method thereof, and wiring board member |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996627A (en) * | 2013-12-05 | 2014-08-20 | 申宇慈 | Method of manufacturing substrates comprising graphic array through vias, and metal wire integration body |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW569655B (en) * | 2001-08-30 | 2004-01-01 | Nitto Denko Corp | Method for manufacturing anisotropically conductive connector |
| JP2005116183A (en) * | 2003-10-02 | 2005-04-28 | Lintec Corp | Forming method of anisotropic conductive film |
| CN103228105A (en) * | 2012-01-12 | 2013-07-31 | 揖斐电株式会社 | Wiring board and method for manufacturing the same |
| JP2015170784A (en) * | 2014-03-10 | 2015-09-28 | 大日本印刷株式会社 | Wiring board, manufacturing method thereof, and wiring board member |
| CN104362100A (en) * | 2014-10-15 | 2015-02-18 | 申宇慈 | Functional substrate and functional substrate manufacturing method |
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