CN108269795A - 远距离传感器的封装结构及其封装方法 - Google Patents
远距离传感器的封装结构及其封装方法 Download PDFInfo
- Publication number
- CN108269795A CN108269795A CN201611253884.7A CN201611253884A CN108269795A CN 108269795 A CN108269795 A CN 108269795A CN 201611253884 A CN201611253884 A CN 201611253884A CN 108269795 A CN108269795 A CN 108269795A
- Authority
- CN
- China
- Prior art keywords
- packing colloid
- loading end
- capping
- substrate
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 28
- 238000004806 packaging method and process Methods 0.000 title claims description 15
- 239000000084 colloidal system Substances 0.000 claims abstract description 83
- 238000012856 packing Methods 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000004020 luminiscence type Methods 0.000 claims abstract description 34
- 238000000465 moulding Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000010422 painting Methods 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 238000000748 compression moulding Methods 0.000 claims 1
- 239000003292 glue Substances 0.000 claims 1
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000003825 pressing Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000021615 conjugation Effects 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Led Device Packages (AREA)
Abstract
一种远距离传感器的封装结构,包含一基板、一发光芯片、一感测芯片、二封装胶体以及一封盖,基板具有一承载面,发光芯片与该感测芯片是相互分离地设置于承载面,二封装胶体是分别包覆发光芯片以及感测芯片并且彼此分离,封盖设置于承载面以及各封装胶体之上,并且通过黏性胶体固接于承载面以及各封装胶体,封盖设有一光发射孔以及一光接收孔,光发射孔以及光接收孔分别位于发光芯片以及感测芯片上方。
Description
技术领域
本发明是与封装结构有关,特别是指一种远距离传感器的封装结构及其封装方法。
背景技术
已知的远距离传感器封装结构是在一基板上设置一发光芯片及一感测芯片,接着经由模压工艺(Molding)将二封装胶体分别包覆该发光芯片及该感测芯片,同时在各该封装胶体顶面形成一半球状透镜部以对应该发光芯片及该感测芯片,最后同样经由模压工艺将一封盖设置于该基板及各该封装胶体上方以完成整个封装流程,值得一提的是,该封盖通常会开没一光发射孔以及一光接收孔分别用以容纳各该透镜部。
惟,此种经由二次模压工艺形成各该封装胶体以及该封盖的方式,该封盖与各该封装胶体及该基板之间的结合性较差,并且,此种利用模压工艺形成该封盖的方式,因为模压模具无法接近各该透镜部,因此该封盖较无法贴近各该透镜部,使得远距离传感器的感测距离较短,因此,现有的远距离传感器封装结构以及其封装方法仍有其缺点,而有待改进。
发明内容
综合上述说明,本发明的主要目的是在于提供一种远距离传感器的封装结构,其具有封装材料结合性较佳并且感测的距离较远的优点。
该远距离传感器的封装结构包含一基板、一发光芯片、一感测芯片、二封装胶体以及一封盖,该基板具有一承载面,该发光芯片与该感测芯片是相互分离地设置于该承载面,该二封装胶体是分别包覆该发光芯片以及该感测芯片并且彼此分离,该封盖设置于该承载面以及各该封装胶体之上,并且通过黏性胶体固接于该承载面以及各该封装胶体,该封盖设有一光发射孔以及一光接收孔,该光发射孔以及该光接收孔分别位于该发光芯片以及该感测芯片上方。
由此,该封盖可通过黏性胶体固接于该承载面以及各该封装胶体,提升了封装结构的材料结合度。
本发明的次要目的是在于提供一种远距离传感器的封装方法,包含下列步骤:
(a)提供一基板,并将一发光芯片以及一感测芯片相互分离地设置于该基板的承载面;
(b)将二封装胶体分别包覆该发光芯片以及该感测芯片,并同时将各该封装胶体相互分离;以及
(c)将一预先成型的封盖设置于该基板的承载面以及各该封装胶体上方,并通过黏性胶体将该封盖固接于该基板的承载面以及各该封装胶体。
较佳地,于步骤(b)中,是利用模压(Molding)的方式将二封装胶体分别包覆该发光芯片以及该感测芯片。
由此,由于该封盖是为预先成型,可直接通过黏性胶体黏贴并固接于各该封装胶体以及该承载面,并且可克服已知技术是利用两次模压分别形成封装胶体以及封盖,导致封盖无法接近封装胶体进而降低感测距离的缺点。
有关本发明所提供的详细构造、特点,将于后续的实施方式详细说明中予以描述。然而,在本领域中具有通常知识者应能了解,所述详细说明以及实施本发明所列举的特定实施例,仅是用于说明本发明,并非用以限制本发明的专利申请范围。
附图说明
为进一步说明本发明的技术内容,以下结合实施例及附图详细说明如后,其中:
图1为本发明第一较佳实施例的俯视图。
图2为图1的2-2剖线剖视图。
图3为本发明第二较佳实施例的剖视图。
图4A-图4D为本发明第一较佳实施例的制造流程图。
图5A-图5E为本发明第二较佳实施例的制造流程图。
具体实施方式
请参考图1-图2,是显示本发明第一较佳实施例所提供的远距离传感器的封装结构10,是包含一基板20、一发光芯片30、一感测芯片40、二封装胶体50以及一封盖60。
基板20于本较佳实施例中是可为印刷电路板(通称PCB)、双马来酰亚胺三嗪基板(通称BT)、玻璃纤维基板(通称FR4)或是直接覆铜基板(通称DBC)但并不以此为限,由此,基板20的生产成本较低,基板20具有一承载面22。
发光芯片30是设置于承载面22,并可通过打线工艺(Wire Bonding)电性连接于基板20,于本较佳实施例中发光芯片30是为LED芯片并可用以发射光源。
感测芯片40是设置于承载面22并与发光芯片30相互分离,其中,感测芯片40亦可通过打线工艺电性连接于基板20,感测芯片40可用以感测发光芯片30所发出的光源。
二封装胶体50是利用模压(Molding)的方式形成并分别包覆发光芯片30以及感测芯片40,二封装胶体50是相互分离并于彼此之间形成一凹沟51,各封装胶体50顶面具有一透镜部52以及一肩部54,于本较佳实施例中,各封装胶体50顶面的肩部54是围绕透镜部52,各封装胶体50顶面的透镜部52是呈半球状,并且各封装胶体50顶面的透镜部52曲率可视需求于制造时进行调整,各封装胶体50是为透光材质制成,如透明的环氧树脂(EpoxyResin)。
封盖60是设置于承载面22以及各封装胶体50之上,并通过黏性胶体70固设于承载面22以及各封装胶体50,封盖60设有一光发射孔72以及一光接收孔74,光发射孔72以及光接收孔74分别位于发光芯片30以及感测芯片40上方,更进一步来说,封盖60是包含一横向段76以及多个由横向段76向下延伸的延伸段78,横向段76是设有光发射孔72以及光接收孔74,横向段76是通过黏性胶体70固设于各封装胶体50顶面的肩部54,并且光发射孔72以及光接收孔74分别位于各封装胶体50顶面的透镜部52上方,各封装胶体50顶面的透镜部52是分别容纳于光发射孔72及光接收孔74中,各延伸段78是分别位于凹沟51以及各封装胶体50外周并且通过黏性胶体70固接于承载面22。
封盖60是由不透光材质所制成,如不透光的环氧树脂(Epoxy Resin)。
请接着参考图4A-图4D,是为本发明第一较佳实施例远距离传感器的封装结构10的封装方法,是包含下列步骤:
步骤(a):提供基板20,并将发光芯片30以及感测芯片40相互分离地设置于基板20的承载面22。
步骤(b):将二封装胶体50分别包覆发光芯片30及感测芯片40,同时将各封装胶体50彼此分离,值得一提的是,于本较佳实施例中是使用模压(Molding)的方式将二封装胶体50分别包覆发光芯片30及感测芯片40,并且是使用直接模压成型的方式使各封装胶体50彼此分离,另外,于本步骤中,于形成各封装胶体50时,可同时于各封装胶体50顶面形成一透镜部52以及一肩部54。
步骤(c):将一预先成型的封盖60设置于基板20的承载面22以及各封装胶体50之上,并通过黏性胶体70将封盖60固接于基板20的承载面22以及各封装胶体50,更进一步来说,于本步骤中,可将黏性胶体70(如不透光的环氧树脂)经由点胶工艺(Dispensing)涂布于基板20的承载面22以及各封装胶体50顶面的肩部54,再将封盖60设置于基板20的承载面22以及各封装胶体50之上,经由烘烤工艺(Baking)使封盖60固接于基板20的承载面22以及各封装胶体50顶面的肩部54。
请接着参考图5A-图5E,是为本发明第二较佳实施例远距离传感器的封装结构10’的封装方法,值得一提的是,第二较佳实施例的步骤(a)与第一较佳实施例的步骤(a)相同,其差异在于,第二较佳实施例的步骤(b)中,是使用模压(Molding)的方式将单一封装胶体55包覆发光芯片30及感测芯片40,并同时在上述单一封装胶体55顶面形成二透镜部52,各透镜部52是分别位于发光芯片30及感测芯片40上方,的后再使用切割的方式将上述单一封装胶体55切割成二彼此分离的封装胶体50’,其中,各封装胶体50’分别包覆发光芯片30及感测芯片40。
接着于第二较佳实施例的步骤(c)中,先将黏性胶体70(如锡膏)以网版印刷(Screen Printing)的方式涂布于封盖60底部,同时在各封装胶体50’顶面的肩部54以及各封装胶体50’之间以点胶工艺涂布黏性胶体70(如不透光的环氧树脂),在将封盖60设置于基板20的承载面22以及各封装胶体50’之上,经由烘烤工艺(Baking)使封盖60固接于基板20的承载面22以及各封装胶体50’顶面的肩部54。
经由上述步骤,请参考图3,是为第二较佳实施例的封装方法所制成的远距离传感器的封装结构10’。
综合上述说明,封盖60可通过黏性胶体70固接于承载面22以及各封装胶体50、50’,提升了封装结构10、10’的材料结合度,并且,由于封盖60是为预先成型,于制造封盖60时即可将光发射孔72及光接收孔74制成贴近各透镜部52的尺寸,再直接通过黏性胶体70将封盖60固接于承载面22以及各封装胶体50、50’之上,由于光发射孔72及光接收孔74可贴近各透镜部52,因此可提高远距离传感器的感测距离。
最后必须再次说明,本发明于前揭实施例中所揭露的构成元件,仅为举例说明,并非用来限制本案的范围,其他等效元件的替代或变化,亦应为本案的权利要求范围所涵盖。
Claims (14)
1.一种远距离传感器的封装结构,包含:
一基板,具有一承载面;
一发光芯片,设置于该承载面;
一感测芯片,设置于该承载面并且与该发光芯片相互分离;
二封装胶体,分别包覆该发光芯片以及该感测芯片,各该封装胶体彼此分离;以及
一封盖,设置于该承载面以及各该封装胶体之上,并通过黏性胶体固设于该承载面以及各该封装胶体,该封盖设有一光发射孔以及一光接收孔,该光发射孔以及该光接收孔分别位于该发光芯片以及该感测芯片上方。
2.如权利要求1所述的远距离传感器的封装结构,各该封装胶体的顶面具有一透镜部以及一肩部,该封盖包含一横向段,该横向段设有该光发射孔以及该光接收孔,该光发射孔以及该光接收孔分别位于各该透镜部上方,该封盖的该横向段通过黏性胶体固设于各该封装胶体顶面的肩部。
3.如权利要求2所述的远距离传感器的封装结构,各该封装胶体顶面的该肩部围绕该透镜部。
4.如权利要求2所述的远距离传感器的封装结构,各该透镜部呈半球状并分别容纳于该光发射孔以及该光接收孔中。
5.如权利要求2所述的远距离传感器的封装结构,该二封装胶体之间形成一凹沟,该封盖还包含多个由该横向段向下延伸的延伸段,各该延伸段分别位于该凹沟以及各该封装胶体外周并且通过黏性胶体固接于该承载面。
6.如权利要求1所述的远距离传感器的封装结构,该发光芯片及该感测芯片利用打线工艺电性连接于该基板。
7.如权利要求1所述的远距离传感器的封装结构,各该封装胶体是利用模压的方式形成。
8.如权利要求1所述的远距离传感器的封装结构,各该封装胶体为透光材质制成,该封盖为不透光材质制成。
9.一种远距离传感器的封装方法,包含下列步骤:
(a)提供一基板,并将一发光芯片以及一感测芯片相互分离地设置于该基板的承载面;
(b)将二封装胶体分别包覆该发光芯片以及该感测芯片,并同时将各该封装胶体彼此分离;以及
(c)将一预先成型的封盖设置于该基板的承载面以及各该封装胶体之上,并通过黏性胶体将该封盖固接于该基板的承载面以及各该封装胶体。
10.如权利要求9所述的远距离传感器的封装方法,于步骤(b)中是利用模压的方式将二封装胶体分别包覆该发光芯片以及该感测芯片。
11.如权利要求9所述的远距离传感器的封装方法,于步骤(b)中是利用切割或是直接模压成型的方式将各该封装胶体彼此分离。
12.如权利要求9所述的远距离传感器的封装方法,于步骤(b)中,于形成各该封装胶体时,可同时于各该封装胶体的顶面形成一透镜部以及一肩部。
13.如权利要求12所述的远距离传感器的封装方法,于步骤(c)中,可先将黏性胶体经点胶工艺涂布于该基板的承载面以及各该封装胶体顶面的肩部,再将该封盖设置于该基板的承载面以及各该封装胶体之上,经由烘烤工艺后使该封盖固接于该基板的承载面以及各该封装胶体顶面的肩部。
14.如权利要求12所述的远距离传感器的封装方法,于步骤(c)中,可先将黏性胶体以网版印刷的方式涂布于该封盖底部,同时在各该封装胶体顶面的肩部以及各该封装胶体之间以点胶的方式涂布黏性胶体,再将该封盖设置于该基板的承载面以及各该封装胶体之上,经由烘烤工艺后使该封盖固接于该基板的承载面以及各该封装胶体顶面的肩部。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110799308.7A CN113540062A (zh) | 2016-12-30 | 2016-12-30 | 远距离传感器的封装结构及其封装方法 |
CN201611253884.7A CN108269795A (zh) | 2016-12-30 | 2016-12-30 | 远距离传感器的封装结构及其封装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611253884.7A CN108269795A (zh) | 2016-12-30 | 2016-12-30 | 远距离传感器的封装结构及其封装方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110799308.7A Division CN113540062A (zh) | 2016-12-30 | 2016-12-30 | 远距离传感器的封装结构及其封装方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108269795A true CN108269795A (zh) | 2018-07-10 |
Family
ID=62754267
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110799308.7A Pending CN113540062A (zh) | 2016-12-30 | 2016-12-30 | 远距离传感器的封装结构及其封装方法 |
CN201611253884.7A Pending CN108269795A (zh) | 2016-12-30 | 2016-12-30 | 远距离传感器的封装结构及其封装方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110799308.7A Pending CN113540062A (zh) | 2016-12-30 | 2016-12-30 | 远距离传感器的封装结构及其封装方法 |
Country Status (1)
Country | Link |
---|---|
CN (2) | CN113540062A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113267134A (zh) * | 2021-04-08 | 2021-08-17 | 弘凯光电(江苏)有限公司 | 距离传感器的封装结构及其封装方法 |
CN113809060A (zh) * | 2021-08-17 | 2021-12-17 | 弘凯光电(江苏)有限公司 | 一种距离传感器封装结构 |
-
2016
- 2016-12-30 CN CN202110799308.7A patent/CN113540062A/zh active Pending
- 2016-12-30 CN CN201611253884.7A patent/CN108269795A/zh active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113267134A (zh) * | 2021-04-08 | 2021-08-17 | 弘凯光电(江苏)有限公司 | 距离传感器的封装结构及其封装方法 |
CN113809060A (zh) * | 2021-08-17 | 2021-12-17 | 弘凯光电(江苏)有限公司 | 一种距离传感器封装结构 |
CN113809060B (zh) * | 2021-08-17 | 2023-10-03 | 弘凯光电(江苏)有限公司 | 一种距离传感器封装结构 |
Also Published As
Publication number | Publication date |
---|---|
CN113540062A (zh) | 2021-10-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN207303097U (zh) | 光学传感器封装体以及电子设备 | |
US7534663B2 (en) | Method for manufacturing a surface mount device | |
CN101981913B (zh) | 晶片级光学元件的安装 | |
US9140600B2 (en) | Optical proximity sensor and manufacturing method thereof | |
US10069051B2 (en) | Semiconductor package device and method of manufacturing the same | |
TWI616670B (zh) | 遠距離感測器的封裝結構 | |
US8890295B2 (en) | Package for mounting a light emitting element including a flat plate-shaped electrode and method for manufacture | |
CN106601629A (zh) | 保护片服贴于芯片感应面的芯片封装构造 | |
US20150028358A1 (en) | Package structure of an optical module | |
TW201505135A (zh) | 光學模組的封裝結構 | |
CN106653742A (zh) | 邻近传感器、电子设备以及制造邻近传感器的方法 | |
CN106033753A (zh) | 封装模块及其基板结构 | |
CN108269795A (zh) | 远距离传感器的封装结构及其封装方法 | |
TW201721204A (zh) | 埋入式光纖模組 | |
US20130052764A1 (en) | Method for packaging light emitting diode | |
TW201824510A (zh) | 遠距離感測器的封裝結構及其封裝方法 | |
CN108269796A (zh) | 远距离传感器的封装结构及其封装方法 | |
CN107195597A (zh) | 光学式指纹感测封装结构及其制造方法 | |
TWI649577B (zh) | 光學模組及其製造方法 | |
TW201505131A (zh) | 光學模組的封裝結構 | |
US6939456B2 (en) | Miniaturized image sensor module | |
CN105405777A (zh) | 一种大面积平行堆栈式封装结构和封装方法 | |
CN108269793A (zh) | 光学模块的封装结构 | |
TWI644456B (zh) | Remote sensor packaging method | |
CN206742222U (zh) | 光学式指纹感测封装结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180710 |