CN108258095B - LED core plate electrode and preparation method thereof and LED chip - Google Patents
LED core plate electrode and preparation method thereof and LED chip Download PDFInfo
- Publication number
- CN108258095B CN108258095B CN201810048297.7A CN201810048297A CN108258095B CN 108258095 B CN108258095 B CN 108258095B CN 201810048297 A CN201810048297 A CN 201810048297A CN 108258095 B CN108258095 B CN 108258095B
- Authority
- CN
- China
- Prior art keywords
- metal layer
- core plate
- plate electrode
- vapor deposition
- led core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
Abstract
This application discloses a kind of LED core plate electrode and preparation method thereof and LED chip, production method includes: to provide GaN wafer and make photoresist in GaN wafer；Cr metal layer is deposited；In Cr layer on surface of metal evaporating Al metal layer, it is 20 DEG C to 50 DEG C that temperature, which is deposited,；Ti metal layer is deposited in Al layer on surface of metal, vapor deposition temperature is 20 DEG C to 50 DEG C；Pt metal layer is deposited in Ti layer on surface of metal, vapor deposition temperature is 20 DEG C to 80 DEG C；Repeat the vapor deposition of Ti metal layer and Pt metal layer, number of cycles is 1 to 3, the vapor deposition plating rate of Ti metal layer is less than the vapor deposition plating rate of Al metal layer, the vapor deposition plating rate of Pt metal layer is greater than the vapor deposition plating rate of Al metal layer, makes to coat the outer surface of Al metal layer completely with the Ti metal layer that Al metal layer directly contacts；Au metal layer is deposited in the last one Ti metal layer/Pt metal layer period Pt layer on surface of metal.
Description
Technical field
This application involves semiconductor fabrication techniques fields, specifically, being related to a kind of LED core plate electrode and preparation method thereof
And LED chip.
Background technique
Under the raised once again background of worry of Present Global energy shortage, energy saving to be that we will face in future important
Problem just attracts generation in the application of lighting area, LED (Light Emitting Diode, light emitting diode) luminous product
The sight of people, LED is as a kind of novel green light source product, and necessarily the trend of future development, 21st century will enter
Using LED as the novel illumination light source epoch of representative.
Traditional LED chip electrode structure generally includes the Cr/Al/Pt/Au or Cr/Al/Ti/Au set gradually, and
And be direct stacking superposition vapor deposition between each layer metal layer, structure can refer to Fig. 1 and Fig. 2, and Fig. 1 is shown in the prior art
A kind of LED chip electrode structure schematic diagram, Fig. 2 show another LED chip electrode structure schematic diagram in the prior art,
Can be seen that from Fig. 1 and Fig. 2, in electrode structure electrode side wall surface Al metal layer be directly it is exposed outside, and Al metal category
In active metal, it is easy to migrate with extraneous water oxygen or other substances generation chemical reaction, will lead to LED core plate electrode
Failure, eventually leads to LEE chip failure.
Summary of the invention
In view of this, the technical problem to be solved by the application is to provide a kind of LED core plate electrodes and preparation method thereof
And LED chip, in the structure of the LED core plate electrode, the entire outer surface (including side wall) of Al metal layer is to be in contact with it
Ti metal layer is fully wrapped around, is equivalent to and is completely isolated from the external environment Al metal layer, effectively avoids the water in external environment
Oxygen or other substances are chemically reacted with Al metal layer, avoid LED chip electrode failure, and then LED chip is avoided to fail, from
And be conducive to be promoted the stability of LED core plate electrode and LED chip, and then be conducive to be promoted the service life of LED chip.
In order to solve the above-mentioned technical problem, the application has following technical solution:
In a first aspect, the application provides a kind of production method of LED core plate electrode, successively include:
GaN wafer comprising transparency conducting layer is provided, and makes photoresist in the GaN wafer；
The GaN wafer surface is purged using oxygen gas plasma, removes remaining photoresist counterdie；
Cr metal layer is deposited on the photoresist surface of the GaN wafer using electron beam evaporation platform, the Cr metal layer
With a thickness of 0.5nm to 5nm；
Deviate from the surface evaporating Al metal layer of the photoresist in the Cr metal layer, wherein the Al metal layer
With a thickness of 80nm to 200nm, it is 20 DEG C to 50 DEG C that temperature, which is deposited,；
Ti metal layer is deposited away from the surface of the Cr metal layer in the Al metal layer, wherein the Ti metal layer
With a thickness of 50nm to 200mn, it is 20 DEG C to 50 DEG C that temperature, which is deposited,；
Pt metal layer is deposited far from the surface of the Al metal layer in the Ti metal layer, wherein the Pt metal layer
With a thickness of 30nm to 100mn, it is 20 DEG C to 80 DEG C that temperature, which is deposited,；
The vapor deposition for repeating the Ti metal layer and the Pt metal layer, makes Ti metal layer/Pt metal layer number of cycles 1
To 3, wherein the vapor deposition plating rate of the Ti metal layer is less than the vapor deposition plating rate of the Al metal layer, the vapor deposition of the Pt metal layer
Plating rate is greater than the vapor deposition plating rate of the Al metal layer, makes the Ti metal layer directly contacted with the Al metal layer by the Al
The outer surface of metal layer coats completely；
It is steamed in the last one Ti metal layer/Pt metal layer period Pt metal layer away from the surface of the Ti metal layer
Plate Au metal layer, the Au metal layer with a thickness of 800nm to 2000nm.
Optionally, in which:
GaN wafer comprising transparency conducting layer is provided, and makes photoresist in the GaN wafer, further are as follows:
GaN wafer comprising transparency conducting layer is provided, and makes negative photoresist in the GaN wafer, the negative photoetching
The photoetching chamfering of glue is θ, wherein 10 °≤θ≤45 °.
Optionally, in which:
The overall thickness of the Cr metal layer, the Al metal layer, Ti metal layer/Pt metal layer and the Au metal layer
For D, 1500nm≤D≤2000nm.
Optionally, in which:
The vapor deposition plating rate of the Al metal layer isExtremely
Optionally, in which:
The vapor deposition plating rate of the Ti metal layer isExtremely
Optionally, in which:
The vapor deposition plating rate of the Pt metal layer isExtremely
Second aspect, the application provide a kind of LED core plate electrode, which is using LED provided herein
The LED core plate electrode that the production method of chip electrode is formed, the LED core plate electrode successively includes: the GaN containing transparency conducting layer
Chip, photoresist, Cr metal layer, Al metal layer, Ti metal layer/Pt metal layer, Au metal layer；
The periodicity of the Ti metal layer/Pt metal layer be 1 to 3, the Cr metal layer with a thickness of 0.5nm to 5nm, institute
State Al metal layer with a thickness of 80nm to 200nm, the Ti metal layer with a thickness of 50nm to 200mn, the Pt metal layer
With a thickness of 30nm to 100mn, the Au metal layer with a thickness of 800nm to 2000nm；
The outer surface of the Al metal layer is coated completely with the Ti metal layer that the Al metal layer directly contacts.
Optionally, in which:
The photoresist is negative photoresist, and the photoetching chamfering of the negative photoresist is θ, wherein 10 °≤θ≤45 °.
Optionally, in which:
The overall thickness of the Cr metal layer, the Al metal layer, Ti metal layer/Pt metal layer and the Au metal layer
For D, 1500nm≤D≤2000nm.
The third aspect, the application also provide a kind of LED chip, including LED core plate electrode, which is this Shen
It please provided LED core plate electrode.
Compared with prior art, method described herein achieving the following effects:
The first, LED core plate electrode and preparation method thereof and LED chip provided by the embodiment of the present application, in production LED core
During plate electrode, after the vapor deposition that Al metal layer is completed on the surface of Cr metal layer, in Al metal layer away from Cr metal layer
Ti metal layer/Pt the metal layer at least one period is deposited in surface, and the vapor deposition plating rate of the Ti metal layer is less than the Al
The vapor deposition plating rate of metal layer, the vapor deposition plating rate of the Pt metal layer are greater than the vapor deposition plating rate of the Al metal layer.Al is being deposited
After metal layer, photoresist is heated, that is, photoresist is in expansion state, under photoresist expansion state, in Al gold
Ti metal layer is directly deposited in the surface for belonging to layer, so that it may coat the entire outer surface of Al metal layer completely, due to Ti metal layer
Vapor deposition plating rate be less than the Al metal layer vapor deposition plating rate, temperature is also low, and photoresist is restored to original pattern at this time, at this time
Evaporation metal is become the high Pt metal of plating rate higher (i.e. power is high), temperature is deposited, photoresist is allowed to be again at the shape of expansion
State, such Pt metal can then coat the entire outer surface of Ti metal.In this way, the outer surface of Al metal layer includes that side wall is complete
By Ti metallic cover, the outer surface of Ti metal is completely by Pt metallic cover, since Ti metal and Pt metal are inert metal, energy
It is enough effectively to completely cut off Al metal layer and external environment, effectively avoid water oxygen or other substances and Al metal layer in external environment from sending out
Biochemical reaction avoids LED chip electrode failure, and then LED chip is avoided to fail, to be conducive to promote LED core plate electrode
And the stability of LED chip, and then be conducive to be promoted the service life of LED chip.
The second, LED core plate electrode and preparation method thereof and LED chip provided by the embodiment of the present application, using at least one
Ti metal layer/Pt the metal layer in a period coats the outer surface of Al metal layer, Ti metal layer relative to Pt metal layer and
Speech, it is cheap, therefore reduction production cost is also helped using the design of Ti metal layer/Pt metal layer.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 show a kind of LED chip electrode structure schematic diagram in the prior art；
Fig. 2 show another LED chip electrode structure schematic diagram in the prior art；
Fig. 3 show a kind of flow chart of the production method of LED core plate electrode provided by the embodiment of the present application；
Fig. 4 show the LED chip electricity of the production method production using LED core plate electrode provided by the embodiment of the present application
A kind of structural schematic diagram of pole；
Fig. 5 show a kind of structural schematic diagram of LED chip provided by the embodiment of the present application.
Specific embodiment
As used some vocabulary to censure specific components in the specification and claims.Those skilled in the art answer
It is understood that hardware manufacturer may call the same component with different nouns.This specification and claims are not with name
The difference of title is as the mode for distinguishing component, but with the difference of component functionally as the criterion of differentiation.Such as logical
The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit
In "." substantially " refer within the acceptable error range, those skilled in the art can within a certain error range solve described in
Technical problem basically reaches the technical effect.In addition, " coupling " word includes any direct and indirect electric property coupling herein
Means.Therefore, if it is described herein that a first device is coupled to a second device, then representing the first device can directly electrical coupling
It is connected to the second device, or the second device indirectly electrically coupled through other devices or coupling means.Specification
Subsequent descriptions be implement the application better embodiment, so it is described description be for the purpose of the rule for illustrating the application,
It is not intended to limit the scope of the present application.The protection scope of the application is as defined by the appended claims.
Traditional LED chip electrode structure generally includes the Cr/Al/Pt/Au or Cr/Al/Ti/Au set gradually, and
And be direct stacking superposition vapor deposition between each layer metal layer, structure can refer to Fig. 1 and Fig. 2, can be seen that from Fig. 1 and Fig. 2,
In electrode structure electrode side wall surface Al metal layer be it is directly exposed and Al metal belongs to active metal outside, be easy with it is outer
The water oxygen on boundary or other substances occur chemical reaction and migrate, and will lead to LED chip electrode failure, eventually lead to LEE core
Piece failure.
In view of this, the technical problem to be solved by the application is to provide a kind of LED core plate electrodes and preparation method thereof
And LED chip, in the structure of the LED core plate electrode, the entire outer surface (including side wall) of Al metal layer is to be in contact with it
Ti metal layer is fully wrapped around, is equivalent to and is completely isolated from the external environment Al metal layer, effectively avoids the water in external environment
Oxygen or other substances are chemically reacted with Al metal layer, avoid LED chip electrode failure, and then LED chip is avoided to fail, from
And be conducive to be promoted the stability of LED core plate electrode and LED chip, and then be conducive to be promoted the service life of LED chip.
In a first aspect, the embodiment of the present application provides a kind of production method of LED core plate electrode, shown in Figure 1 is this hair
The flow chart of the production method of LED core plate electrode provided by bright, the production method of LED core plate electrode, is successively wrapped in the present invention
It includes:
Step 101 provides the GaN wafer comprising transparency conducting layer, and makes photoresist in the GaN wafer；
Step 102 purges the GaN wafer surface using oxygen gas plasma, removes remaining photoresist counterdie；
Cr metal layer, the Cr is deposited on the photoresist surface of the GaN wafer using electron beam evaporation platform in step 103
Metal layer with a thickness of 0.5nm to 5nm；
Step 104, the surface evaporating Al metal layer for deviating from the photoresist in the Cr metal layer, wherein described
Al metal layer with a thickness of 80nm to 200nm, it is 20 DEG C to 50 DEG C that temperature, which is deposited,；
Ti metal layer is deposited away from the surface of the Cr metal layer in the Al metal layer in step 105, wherein the Ti
Metal layer with a thickness of 50nm to 200mn, it is 20 DEG C to 50 DEG C that temperature, which is deposited,；
Pt metal layer is deposited far from the surface of the Al metal layer in the Ti metal layer in step 106, wherein the Pt
Metal layer with a thickness of 30nm to 100mn, it is 20 DEG C to 80 DEG C that temperature, which is deposited,；
Step 107, the vapor deposition for repeating the Ti metal layer and the Pt metal layer, make Ti metal layer/Pt metal layer week
Phase number is 1 to 3, wherein the vapor deposition plating rate of the Ti metal layer is less than the vapor deposition plating rate of the Al metal layer, the Pt metal
The vapor deposition plating rate of layer is greater than the vapor deposition plating rate of the Al metal layer, makes the Ti metal layer directly contacted with the Al metal layer
The outer surface of the Al metal layer is coated completely；
Step 108 deviates from the Ti metal layer in the last one Ti metal layer/Pt metal layer period Pt metal layer
Surface be deposited Au metal layer, the Au metal layer with a thickness of 800nm to 2000nm.
In the production method of LED core plate electrode provided by the embodiment of the present application, by step 104 Cr metal layer table
After the vapor deposition of Al metal layer is completed in face, at least one week is deposited away from the surface of Cr metal layer in Al metal layer using step 105
Ti metal layer/Pt metal layer of phase, and the vapor deposition plating rate of the Ti metal layer is less than the vapor deposition plating rate of the Al metal layer, institute
The vapor deposition plating rate for stating Pt metal layer is greater than the vapor deposition plating rate of the Al metal layer.After Al metal layer has been deposited, photoresist be by
It heats, that is, photoresist is in expansion state, and under photoresist expansion state, Ti is directly deposited on the surface of Al metal layer
Metal layer, Ti metal layer can coat completely the entire outer surface of Al metal layer, since the vapor deposition plating rate of Ti metal layer is small
In the vapor deposition plating rate of the Al metal layer, temperature is also low, and photoresist is restored to original pattern at this time, at this time becomes evaporation metal
For the high Pt metal of vapor deposition plating rate higher (i.e. power is high), temperature, photoresist is allowed to be again at the state of expansion, such Pt metal
The entire outer surface of Ti metal can then be coated.The production method of LED core plate electrode provided by the embodiment of the present application is formed
Electrode structure be Cr/Al/Ti/Pt/Ti/Pt/Ti/Pt/Au, wherein vapor deposition Ti vapor deposition electron beam than evaporating Al power
Low, the temperature of wafer surface is low, and photoresist is in opposite rounding state, and function of the vapor deposition beam power than evaporating Al of Pt is deposited
Rate is high, and the temperature of wafer surface is high, and photoresist is in relative distension state, and this can enable the protection Pt metals and Ti on the surface Al
Width ratio Al wide, ultimately form a trapezoidal clad structure, referring to fig. 4, Fig. 4 is shown to be mentioned using the embodiment of the present application
A kind of structural schematic diagram of the LED core plate electrode of the production method production of the LED core plate electrode of confession, the appearance bread of Al metal layer
Its side wall is included completely by Ti metallic cover, and the outer surface of Ti metal is completely by Pt metallic cover, since Ti metal and Pt metal are equal
It is inert metal, effectively Al metal layer and external environment can be completely cut off, effectively avoid the water oxygen or other objects in external environment
Matter is chemically reacted with Al metal layer, avoids LED chip electrode failure, and then LED chip is avoided to fail, to be conducive to mention
The stability of LED core plate electrode and LED chip is risen, and then is conducive to be promoted the service life of LED chip.In addition, the embodiment of the present application
In the production method of provided LED core plate electrode, using the Ti metal layer/Pt metal layer at least one period by Al metal layer
Outer surface coated, Ti metal layer is cheap for Pt metal layer, thus use Ti metal layer/Pt metal
The design of layer also helps reduction production cost.
If coated Al metal layer only with Pt metal layer, the degrees of expansion of photoresist will be higher and higher, vapor deposition
The overall width of metal electrode can broaden after the completion, and electrode width broadens meeting so that the brightness of LED chip declines, therefore can not
Al layers are equally coated with Pt metal, can be solved the above problems very well by Pt and Ti combination.
Optionally, in above-mentioned steps 101, the GaN wafer comprising transparency conducting layer is provided, and make in the GaN wafer
Make photoresist, further are as follows:
GaN wafer comprising transparency conducting layer is provided, and makes negative photoresist in the GaN wafer, the negative photoetching
The photoetching chamfering of glue is θ, wherein 10 °≤θ≤45 °.
Negative photoresist is the wafer surface that can be retained by ultraviolet light part, and retaining photoresist is in inverted trapezoidal pattern, just
Photoresist is the wafer surface that can not retained by ultraviolet light part, retains photoresist and forms trapezoid pattern, negative photoresist
Chamfer angle θ design it is smaller when, such as when being designed as 10 °≤θ≤45 °, on photoresist surface when evaporated metal layer, negative photoresist holds
Easily deformation occurs, enables Al metal layer by Ti metal so as to change the width of metal layer when metal layer width changes
Layer/Pt metal layer is fully wrapped around, avoids the substances such as Al metal layer and water oxygen in external environment from contacting and chemically react, keeps away
Exempt from LED chip electrode failure, to be conducive to be promoted the stability of LED core plate electrode, and then is conducive to promote LED core plate electrode
Service life.
Optionally, in the production method of LED core plate electrode provided by the embodiment of the present application, Cr metal layer, Al metal layer,
The overall thickness of Ti metal layer/Pt metal layer and Au metal layer is D, 1500nm≤D≤2000nm.
The overall thickness of electrode structure is set greater than the encapsulation weldering that LED chip is easily facilitated equal to 1500nm by the application
Line, if thickness of electrode is inadequate, amount of metal is on the low side, and the gold thread failure welding of electrode and encapsulation introducing electric current be easy to cause short circuit existing
As the application thickness of electrode, which uses, is more than or equal to 1500nm, it can be ensured that the reliable welding of gold thread and electrode improves LED chip
The reliability of electrode.In addition, being to also help the production for saving LED electrode less than or equal to 2000nm by the thickness design of electrode
Cost.
Optionally, in the production method of LED core plate electrode provided by the embodiment of the present application, the vapor deposition of the Al metal layer
Plating rate isExtremely
Optionally, in the production method of LED core plate electrode provided by the embodiment of the present application, the vapor deposition of the Ti metal layer
Plating rate isExtremely
Optionally, in the production method of LED core plate electrode provided by the embodiment of the present application, the vapor deposition of the Pt metal layer
Plating rate isExtremely
Certainly, a kind of implementation that plating rate range is respectively deposited in Al metal layer, Ti metal layer, Pt metal layer is only gived above
Example, except using in addition to above range, also can be used other any feasible plating rate ranges, the application to this without limiting, as long as
Ensure that the vapor deposition plating rate of Ti metal layer is less than the vapor deposition plating rate of Al metal layer, the vapor deposition plating rate of Pt metal layer is greater than Al metal layer
Plating rate is deposited, so that coating the outer surface of Al metal layer completely with the Ti metal layer that Al metal layer directly contacts.
Based on the same inventive concept, the application also provides a kind of LED core plate electrode, and referring to fig. 4, which is
LED core plate electrode is formed by using the production method of LED core plate electrode provided by the embodiment of the present application, LED chip electricity
Pole successively include: GaN wafer containing transparency conducting layer, photoresist, Cr metal layer, Al metal layer, Ti metal layer/Pt metal layer,
Au metal layer；
The periodicity of the Ti metal layer/Pt metal layer be 1 to 3, the Cr metal layer with a thickness of 0.5nm to 5nm, institute
State Al metal layer with a thickness of 80nm to 200nm, the Ti metal layer with a thickness of 50nm to 200mn, the Pt metal layer
With a thickness of 30nm to 100mn, the Au metal layer with a thickness of 800nm to 2000nm；
The outer surface of the Al metal layer is coated completely with the Ti metal layer that the Al metal layer directly contacts.
Specifically, LED core plate electrode provided by embodiment illustrated in fig. 4 is using LED provided by the embodiment of the present application
For the production method of chip electrode come what is formed, electrode structure is Cr/Al/Ti/Pt/Ti/Pt/Ti/Pt/Au, wherein vapor deposition Ti
Vapor deposition electron beam is lower than the power of evaporating Al, and the temperature of wafer surface is low, and photoresist is in opposite rounding state, and the steaming of Pt is deposited
Plating beam power is higher than the power of evaporating Al, and the temperature of wafer surface is high, and photoresist is in relative distension state, this can make
The width ratio Al wide for obtaining the protection Pt metal and Ti on the surface Al, ultimately forms a trapezoidal clad structure, referring to fig. 4, Al gold
The outer surface for belonging to layer includes its side wall completely by Ti metallic cover, and the outer surface of Ti metal is completely by Pt metallic cover, due to Ti
Metal and Pt metal are inert metals, can effectively completely cut off Al metal layer and external environment, effectively avoid in external environment
Water oxygen or other substances chemically reacted with Al metal layer, avoid LED chip electrode failure, and then LED chip is avoided to lose
Effect to be conducive to be promoted the stability of LED core plate electrode and LED chip, and then is conducive to be promoted the service life of LED chip.This
Outside, the outer surface of Al metal layer is coated using the Ti metal layer/Pt metal layer at least one period, Ti metal layer is opposite
It is cheap for Pt metal layer, therefore reduction production cost is also helped using the design of Ti metal layer/Pt metal layer.
It should be noted that being coated on Ti metal layer/Pt metal layer of Al layer on surface of metal in embodiment illustrated in fig. 4
Period is 3, and other than such implementation, Ti metal layer/Pt metal layer period can also be 1 or 2, the application to this not into
Row is specific to be limited, as long as ensuring that the outer surface of Al metal layer can be included that side wall coats i.e. completely by Ti metal layer/Pt metal layer
It can.
Optionally, the photoresist is negative photoresist, and the photoetching chamfering of the negative photoresist is θ, wherein 10 °≤θ≤
45°。
Negative photoresist is the wafer surface that can be retained by ultraviolet light part, and retaining photoresist is in inverted trapezoidal pattern, just
Photoresist is the wafer surface that can not retained by ultraviolet light part, retains photoresist and forms trapezoid pattern, negative photoresist
Chamfer angle θ design it is smaller when, such as when being designed as 10 °≤θ≤45 °, on photoresist surface when evaporated metal layer, negative photoresist holds
Easily deformation occurs, enables Al metal layer by Ti metal so as to change the width of metal layer when metal layer width changes
Layer/Pt metal layer is fully wrapped around, avoids the substances such as Al metal layer and water oxygen in external environment from contacting and chemically react, keeps away
Exempt from LED chip electrode failure, to be conducive to be promoted the stability of LED core plate electrode, and then is conducive to promote LED core plate electrode
Service life.
Optionally, in LED core plate electrode provided by the embodiment of the present application, Cr metal layer, Al metal layer, Ti metal layer/
The overall thickness of Pt metal layer and Au metal layer is D, 1500nm≤D≤2000nm.
The overall thickness of electrode structure is set greater than the encapsulation weldering that LED chip is easily facilitated equal to 1500nm by the application
Line, if thickness of electrode is inadequate, amount of metal is on the low side, and the gold thread failure welding of electrode and encapsulation introducing electric current be easy to cause short circuit existing
As the application thickness of electrode, which uses, is more than or equal to 1500nm, it can be ensured that the reliable welding of gold thread and electrode improves LED chip
The reliability of electrode.In addition, being to also help the production for saving LED electrode less than or equal to 2000nm by the thickness design of electrode
Cost.
Based on the same inventive concept, the embodiment of the present application also provides a kind of LED chip, and Fig. 5 show the embodiment of the present application
A kind of structural schematic diagram of provided LED chip, the LED chip include LED core plate electrode, which is this Shen
It please LED core plate electrode provided by embodiment.
Referring to Fig. 5, which includes substrate 1, the N-type GaN layer 2 being formed on substrate surface, is formed in N-type GaN layer
Quantum well layer 3 on top surface, the p-type GaN layer 4 being formed on quantum well layer top surface, transparency conducting layer 5, P-type electrode 6, p-type weldering
Disk 7, N-type electrode 8, N-type pad 9, passivation layer 10 and current barrier layer 11.The production method of the LED chip includes:
Step 201 thoroughly cleans epitaxial wafer, which is shining with GaN base in PSS Grown on Sapphire Substrates
The epitaxial wafer of diode chip structure；
Step 202 deposits SiO2 using plasma enhanced chemical vapor deposition method (PECVD) on 4 surface of p-type GaN layer
Current barrier layer, by photoetching, wet etching, cleaning remove photoresist and etc. the electric current of special pattern is produced in p-type GaN layer 4
Barrier layer 11.
Transparency conducting layer 5 is made by the way of electron beam evaporation or sputtering (sputter) after step 203, cleaning,
The material of middle transparency conducting layer 5 is tin indium oxide (ITO)；
Step 204 is annealed using high temperature furnace pipe either quick anneal oven (RTA), forms transparency conducting layer 5 and P
The Ohmic contact of type GaN 4；
Step 205 passes through yellow light photoetching, wet etching, Inductively coupled plasma (ICP) etching, the step such as cleaning of removing photoresist
Suddenly the luminous zone table top produced exposes N-type GaN 2；
Step 206 deposits insulating passivation layer 9 using plasma enhanced chemical vapor deposition method (PECVD)；
Step 207 is made by photoetching, development step for being distributed P-type electrode 6 and p-type pad 7, N-type electrode 8 and N-type
Expose the position of pad 9；
Step 208 makes P-type electrode 6 and p-type pad 7, N-type electrode 8 and N-type by sweeping the modes such as glue, deposition, removing
Pad 9；Electrode structure is Cr (2.5nm)/AL (150nm)/Ti (100nm)/Pt (40nm)/Ti (100nm)/Pt (40nm)/Ti
Thickness range 1500um-2000nm in (100nm)/Pt (80nm)/Au (1200nm) electrode, wherein thickness of electrode is greater than
1500um is the encapsulation bonding wire for the ease of LED chip, and if thickness of electrode is inadequate, amount of metal is on the low side, and electrode and encapsulation introduce electricity
The gold thread failure welding of stream be easy to cause the dead lamp of short circuit, is for cost consideration less than 2000nm.
Step 209 is made annealing treatment using high temperature furnace pipe；
Wafer is divided into core particles by processes such as grinding, polishing, back plating, cutting, splittings by step 210.
Using LED chip made by the embodiment of the present application compared with the LED chip using conventional method production,
It has a clear superiority in terms of stability, detailed data such as following table, table 1 is the application LED chip and conventional LED chip stability contrast
Table:
1 the application LED chip of table and conventional LED chip stability contrast table
| Classification | Aging 1000H | Aging 2000H | Aging 3000H |
| Embodiment transparency conducting layer | OK | OK | OK |
| Convention transparent conductive layer | OK | NG | NG |
It can be seen that from upper table, LED chip provided by the embodiment of the present application can be by product aging survey in 3000 hours
Examination, conventional LED chips can only by product aging test in 1000 hours, LED chip provided by the embodiment of the present application it is steady
It is qualitative to be improved significantly.
Since LED chip itself can continue to generate heat in the operating condition, degradation described herein is in LED
Constant current is persistently loaded on chip and carries out life test, examines the LED operation fever to the shadow in LED chip service life with this
It rings.
In addition, it should be noted that, in the embodiment of the present application, it is practical when each layer metal is deposited, it is not set
Heating temperature, that is, the temperature defaulted is exactly room temperature.The temperature of cavity can change the beam bombardment of mainly evaporator
Source metal target, which generates heat, causes cavity temperature to increase, and cavity temperature is generally no more than 80 DEG C (in order to ensure photoresist
Can normally remove), so being the cooling water for having led to 20 DEG C around cavity.The temperature mentioned in the embodiment of the present application only should
Layer progress coating process cavity and cold-zone water reach temperature when relative equilibrium.The temperature is mainly (i.e. electric by the plating rate of metal
The power of sub- speed), the classification of metal material, cooling water inflow are comprehensive determines.
It should also be noted that, LED core plate electrode provided by the embodiment of the present application and preparation method thereof and LED chip
In, by Ti metal layer/Pt metal layer the outer surface of Al is coated completely in the way of be applicant by test infinitely
And the technical solution obtained, the not prior art, nor conventional selection, have substantive distinguishing features outstanding and significantly into
Step.
As can be seen from the above embodiments beneficial effect existing for the application is:
The first, LED core plate electrode and preparation method thereof and LED chip provided by the embodiment of the present application, in production LED core
During plate electrode, after the vapor deposition that Al metal layer is completed on the surface of Cr metal layer, in Al metal layer away from Cr metal layer
Ti metal layer/Pt the metal layer at least one period is deposited in surface, and the vapor deposition plating rate of the Ti metal layer is less than the Al
The vapor deposition plating rate of metal layer, the vapor deposition plating rate of the Pt metal layer are greater than the vapor deposition plating rate of the Al metal layer.Al is being deposited
After metal layer, photoresist is heated, that is, photoresist is in expansion state, under photoresist expansion state, in Al gold
Ti metal layer is directly deposited in the surface for belonging to layer, so that it may coat the entire outer surface of Al metal layer completely, due to Ti metal layer
Vapor deposition plating rate be less than the Al metal layer vapor deposition plating rate, temperature is also low, and photoresist is restored to original pattern at this time, at this time
Evaporation metal is become the high Pt metal of plating rate higher (i.e. power is high), temperature is deposited, photoresist is allowed to be again at the shape of expansion
State, such Pt metal can then coat the entire outer surface of Ti metal.In this way, the outer surface of Al metal layer includes that side wall is complete
By Ti metallic cover, the outer surface of Ti metal is completely by Pt metallic cover, since Ti metal and Pt metal are inert metal, energy
It is enough effectively to completely cut off Al metal layer and external environment, effectively avoid water oxygen or other substances and Al metal layer in external environment from sending out
Biochemical reaction avoids LED chip electrode failure, and then LED chip is avoided to fail, to be conducive to promote LED core plate electrode
And the stability of LED chip, and then be conducive to be promoted the service life of LED chip.
The second, LED core plate electrode and preparation method thereof and LED chip provided by the embodiment of the present application, using at least one
Ti metal layer/Pt the metal layer in a period coats the outer surface of Al metal layer, Ti metal layer relative to Pt metal layer and
Speech, it is cheap, therefore reduction production cost is also helped using the design of Ti metal layer/Pt metal layer.
It should be understood by those skilled in the art that, embodiments herein can provide as method, apparatus or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the application, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
Above description shows and describes several preferred embodiments of the present application, but as previously described, it should be understood that the application
Be not limited to forms disclosed herein, should not be regarded as an exclusion of other examples, and can be used for various other combinations,
Modification and environment, and the above teachings or related fields of technology or knowledge can be passed through within that scope of the inventive concept describe herein
It is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then it all should be in this Shen
It please be in the protection scope of appended claims.
Claims (10)
1. a kind of production method of LED core plate electrode, which is characterized in that successively include:
GaN wafer comprising transparency conducting layer is provided, and makes photoresist in the GaN wafer；
The GaN wafer surface is purged using oxygen gas plasma, removes remaining photoresist counterdie；
Cr metal layer, the thickness of the Cr metal layer is deposited on the photoresist surface of the GaN wafer using electron beam evaporation platform
For 0.5nm to 5nm；
The Cr metal layer deviate from the photoresist surface evaporating Al metal layer, wherein the Al metal layer with a thickness of
80nm to 200nm, vapor deposition temperature are 20 DEG C to 50 DEG C；
Ti metal layer is deposited away from the surface of the Cr metal layer in the Al metal layer, wherein the thickness of the Ti metal layer
For 50nm to 200mn, it is 20 DEG C to 50 DEG C that temperature, which is deposited,；
Pt metal layer is deposited far from the surface of the Al metal layer in the Ti metal layer, wherein the thickness of the Pt metal layer
For 30nm to 100mn, it is 20 DEG C to 80 DEG C that temperature, which is deposited,；
The vapor deposition for repeating the Ti metal layer and the Pt metal layer, makes Ti metal layer/Pt metal layer number of cycles 1 to 3,
Wherein, the vapor deposition plating rate of the Ti metal layer is less than the vapor deposition plating rate of the Al metal layer, the vapor deposition plating rate of the Pt metal layer
Greater than the vapor deposition plating rate of the Al metal layer, make the Ti metal layer directly contacted with the Al metal layer by the Al metal
The outer surface of layer coats completely；
Au is deposited away from the surface of the Ti metal layer in the last one Ti metal layer/Pt metal layer period Pt metal layer
Metal layer, the Au metal layer with a thickness of 800nm to 2000nm.
2. the production method of LED core plate electrode according to claim 1, which is characterized in that providing includes transparency conducting layer
GaN wafer, and make photoresist in the GaN wafer, further are as follows:
GaN wafer comprising transparency conducting layer is provided, and makes negative photoresist in the GaN wafer, the negative photoresist
Photoetching chamfering is θ, wherein 10 °≤θ≤45 °.
3. the production method of LED core plate electrode according to claim 1, which is characterized in that the Cr metal layer, the Al
The overall thickness of metal layer, Ti metal layer/Pt metal layer and the Au metal layer is D, 1500nm≤D≤2000nm.
4. the production method of LED core plate electrode according to claim 1, which is characterized in that the vapor deposition of the Al metal layer
Plating rate isExtremely
5. the production method of LED core plate electrode according to claim 1, which is characterized in that the vapor deposition of the Ti metal layer
Plating rate isExtremely
6. the production method of LED core plate electrode according to claim 1, which is characterized in that the vapor deposition of the Pt metal layer
Plating rate isExtremely
7. a kind of LED core plate electrode, which is characterized in that the LED core plate electrode is using any described of claim 1 to 6
The production method of LED core plate electrode be formed by LED core plate electrode, the LED core plate electrode successively includes: containing electrically conducting transparent
The GaN wafer of layer, photoresist, Cr metal layer, Al metal layer, Ti metal layer/Pt metal layer, Au metal layer；
The periodicity of the Ti metal layer/Pt metal layer be 1 to 3, the Cr metal layer with a thickness of 0.5nm to 5nm, the Al
Metal layer with a thickness of 80nm to 200nm, the Ti metal layer with a thickness of 50nm to 200mn, the thickness of the Pt metal layer
For 30nm to 100mn, the Au metal layer with a thickness of 800nm to 2000nm；
The outer surface of the Al metal layer is coated completely with the Ti metal layer that the Al metal layer directly contacts.
8. LED core plate electrode according to claim 7, which is characterized in that the photoresist is negative photoresist, the negative light
The photoetching chamfering of photoresist is θ, wherein 10 °≤θ≤45 °.
9. LED core plate electrode according to claim 7, which is characterized in that the Cr metal layer, the Al metal layer, institute
The overall thickness for stating Ti metal layer/Pt metal layer and the Au metal layer is D, 1500nm≤D≤2000nm.
10. a kind of LED chip, which is characterized in that including LED core plate electrode, wherein the LED core plate electrode is claim 8
Or LED core plate electrode described in 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810048297.7A CN108258095B (en) | 2018-01-18 | 2018-01-18 | LED core plate electrode and preparation method thereof and LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810048297.7A CN108258095B (en) | 2018-01-18 | 2018-01-18 | LED core plate electrode and preparation method thereof and LED chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108258095A CN108258095A (en) | 2018-07-06 |
| CN108258095B true CN108258095B (en) | 2019-05-31 |
Family
ID=62741032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810048297.7A Active CN108258095B (en) | 2018-01-18 | 2018-01-18 | LED core plate electrode and preparation method thereof and LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108258095B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113853688A (en) * | 2019-05-14 | 2021-12-28 | 首尔伟傲世有限公司 | LED chip package and manufacturing method thereof |
| CN112242467A (en) * | 2020-10-20 | 2021-01-19 | 厦门乾照光电股份有限公司 | Manufacturing method of LED chip |
| CN112647048B (en) * | 2020-12-18 | 2022-05-13 | 福建兆元光电有限公司 | Inverted electrode and manufacturing method thereof |
| CN114657516B (en) * | 2020-12-23 | 2023-10-03 | 山东浪潮华光光电子股份有限公司 | Method for evaporating thick chromium metal layer by using single crucible |
| CN112820808A (en) * | 2021-01-05 | 2021-05-18 | 华灿光电(苏州）有限公司 | Light-emitting diode chip preparation method and light-emitting diode chip |
| CN113078245A (en) * | 2021-03-25 | 2021-07-06 | 南昌凯迅光电有限公司 | LED aluminum electrode and preparation method thereof |
| CN114725262A (en) * | 2021-11-26 | 2022-07-08 | 泉州三安半导体科技有限公司 | Light emitting diode chip and light emitting device |
| CN114388667A (en) * | 2021-12-23 | 2022-04-22 | 江西兆驰半导体有限公司 | Flip light-emitting diode chip electrode and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130259A (en) * | 2011-01-14 | 2011-07-20 | 大连美明外延片科技有限公司 | Composite electrode of light-emitting diode chip and manufacturing methods thereof |
| CN103797591A (en) * | 2011-08-17 | 2014-05-14 | 三星电子株式会社 | Method for manufacturing a nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured thereby |
| CN104659175A (en) * | 2013-11-15 | 2015-05-27 | 晶元光电股份有限公司 | Photoelectric element and manufacturing method thereof |
| CN106328781A (en) * | 2016-11-03 | 2017-01-11 | 湘能华磊光电股份有限公司 | High reflectivity LED electrode and preparing method thereof |
| CN106876548A (en) * | 2017-02-24 | 2017-06-20 | 湘能华磊光电股份有限公司 | LED reflection electrode and preparation method thereof |
| CN107123594A (en) * | 2017-05-10 | 2017-09-01 | 湘能华磊光电股份有限公司 | LED electrode preparation method, LED electrode and LED chip |
| CN107516704A (en) * | 2012-05-17 | 2017-12-26 | 晶元光电股份有限公司 | Light-emitting device with reflecting electrode |
-
2018
- 2018-01-18 CN CN201810048297.7A patent/CN108258095B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130259A (en) * | 2011-01-14 | 2011-07-20 | 大连美明外延片科技有限公司 | Composite electrode of light-emitting diode chip and manufacturing methods thereof |
| CN103797591A (en) * | 2011-08-17 | 2014-05-14 | 三星电子株式会社 | Method for manufacturing a nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured thereby |
| CN107516704A (en) * | 2012-05-17 | 2017-12-26 | 晶元光电股份有限公司 | Light-emitting device with reflecting electrode |
| CN104659175A (en) * | 2013-11-15 | 2015-05-27 | 晶元光电股份有限公司 | Photoelectric element and manufacturing method thereof |
| CN106328781A (en) * | 2016-11-03 | 2017-01-11 | 湘能华磊光电股份有限公司 | High reflectivity LED electrode and preparing method thereof |
| CN106876548A (en) * | 2017-02-24 | 2017-06-20 | 湘能华磊光电股份有限公司 | LED reflection electrode and preparation method thereof |
| CN107123594A (en) * | 2017-05-10 | 2017-09-01 | 湘能华磊光电股份有限公司 | LED electrode preparation method, LED electrode and LED chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108258095A (en) | 2018-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108258095B (en) | LED core plate electrode and preparation method thereof and LED chip | |
| CN104617195B (en) | A kind of near-infrared luminous diode and its production method | |
| JP2008085327A (en) | Solar cell, and method of manufacturing solar cell | |
| CN106058003B (en) | A method of promoting LED chip brightness | |
| CN105140368B (en) | A kind of high performance lED chip and preparation method thereof | |
| CN106876548B (en) | LED reflection electrode and preparation method thereof | |
| CN105702820A (en) | Reversed-polarity AlGaInP-based LED coated with ITO on surface and manufacturing method thereof | |
| CN205723599U (en) | Surface covers the reversed polarity AlGaInP base LED of ITO | |
| CN109545934A (en) | Pore type LED electrode structure and preparation method thereof | |
| CN106328781B (en) | High reflectance LED electrode and preparation method thereof | |
| CN102646765A (en) | Light-emitting diode (LED) chip and corresponding manufacturing method thereof | |
| WO2021237892A1 (en) | Led chip applied to display screen and preparation method therefor | |
| CN105374914A (en) | LED chip and LED chip manufacturing method | |
| CN202601710U (en) | LED chip | |
| CN108336207A (en) | A kind of high reliability LED chip and preparation method thereof | |
| CN102637790A (en) | LED (light emitting diode) chip and corresponding manufacturing method thereof | |
| CN106848027B (en) | The preparation method of the vertical flip LED chips of high reliability | |
| CN102201508B (en) | Light emitting diode chip and fabrication method thereof | |
| TWI492416B (en) | Light emitting diode chip and making method thereof | |
| CN105810791A (en) | Manufacturing method of flip LED chip | |
| CN108538998B (en) | LED chip and manufacturing method thereof | |
| CN102255027B (en) | GaN-based vertical LED (Light-Emitting Diode) chip structure and preparation method thereof | |
| CN105118905A (en) | LED chip electrode and fabrication method thereof | |
| CN107731969A (en) | The preparation method of LED chip | |
| CN102789976A (en) | Manufacturing method for GaN (gallium nitride) based LED (light emitting diode) chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |