CN202601710U - LED chip - Google Patents
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- CN202601710U CN202601710U CN 201220195686 CN201220195686U CN202601710U CN 202601710 U CN202601710 U CN 202601710U CN 201220195686 CN201220195686 CN 201220195686 CN 201220195686 U CN201220195686 U CN 201220195686U CN 202601710 U CN202601710 U CN 202601710U
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- led chip
- barrier layer
- silver migration
- migration barrier
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Abstract
The utility model provides an LED chip, at least including an epitaxial layer, a metal functional layer and a silver migration barrier layer, wherein the epitaxial layer comprises an N-type layer, a luminous layer and a P-type layer; the luminous layer is arranged on the N-type layer; the P-type layer is arranged on the luminous layer; the metal functional layer is arranged on the P-type layer; and the silver migration barrier layer is arranged on the P-type layer, and is arranged at the periphery of the metal functional layer. The LED chip can solve diffusion and electro migration of a mirror layer, and can improve the reliability of the LED.
Description
Technical field
The utility model relates to photoelectric chip and makes the field, relates in particular to a kind of led chip.
Background technology
Late 1990s, at the initial stage in semiconductor device illumination epoch, the room illumination mainly is the tungsten incandescent lamp, compact fluorescent lamp since high efficiency just by positive popularization.Most operational environments use fluorescent lamp, and street lighting is main with sodium vapor lamp then.Yet (light-emitting diode LED) has had very big application to the high intensity visible light-emitting diode, and the solid state lighting that is the basis with it is about to the revolution again that causes that illumination is historical just in fast development.Although this developing state advances swiftly unhindered, the light-emitting diodes tube efficiency generally is not very high, and wherein subject matter is that the led chip light extraction efficiency is not high.
Adopt speculum and the mode that increases current density can improve the led chip extraction efficiency effectively; And silver is as the highest metal of nature reflectivity; Generally be used for processing the light extraction efficiency that speculum improves LED, but silver is as the easiest a kind of the migration, and the highest metal of migration rate; In the LED course of work, can produce leak channel, influence the stability of LED greatly along chip sides.
At present, in order to prevent the diffusion and the electromigration of silver, the mirror layer of generally silver being processed is etched into little figure; And adopt a kind of or combination in gold, platinum, nickel, chromium, tungsten, the tungsten-titanium alloy to process barrier deposition in its surface, but blocking effect is still bad, at chip edge; Silver still is easy to diffusion or produces ELECTROMIGRATION PHENOMENON; Cause chip failure, and complex process, cost is higher.
For flip LED chips, generally all can adopt dielectric insulating film made of silicon dioxide passivating film, make the insulation of etching step, reduce the electric leakage of chip, but need an extra photoetching, increased process complexity and cost of manufacture.
To above problem, need a kind of new structure of design, not only improve the LED light extraction efficiency, and can prevent that silver is in chip edge diffusion and reduction ELECTROMIGRATION PHENOMENON.
Summary of the invention
The purpose of the utility model provides a kind of led chip, prevents silver diffusion and ELECTROMIGRATION PHENOMENON in the mirror layer, improves chip reliability.
In order to achieve the above object, the utility model provides a kind of led chip, comprises at least: epitaxial loayer, said epitaxial loayer comprise N type layer, are positioned at the luminescent layer on the said N type layer and are positioned at the P type layer on the said luminescent layer; Metal function layer, said metal function layer are positioned on the said P type layer; Silver migration barrier layer, said silver migration barrier layer is positioned on the said P type layer, and it is peripheral to be positioned at said metal function layer.
Further, said metal function layer includes P type contact layer, mirror layer or P type contact layer, mirror layer and the barrier layer that is formed at P type laminar surface successively.
Further, a side that is close to said silver migration barrier layer is formed with the step that runs through P type layer, luminescent layer, and the silver migration barrier layer of this side is extended the surface that covers said step and formed passivating film; Be formed with N electrode groove in the silver migration barrier layer on the said ledge surface, be arranged in said N electrode groove and be formed with the N electrode; The surface that is positioned at metal function laminar surface, silver migration barrier layer and N electrode is formed with first bonded layer and second bonded layer successively, is positioned at the second bonded layer surface and is formed with substrate.
Preferably, the said silver-colored material that uses on the barrier layer that moves is insulating material.
Preferably, said insulating material is a kind of or combination in silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, aluminium oxide, aluminium nitride, the titanium oxide.
Preferably, the said silver-colored thickness that moves the barrier layer is 100nm-10000nm.
Preferably, the thickness of said mirror layer is 50nm-500nm.
Further, said silver-colored housing size of moving the barrier layer equals led chip frame size.
Further, the said silver-colored housing that moves the barrier layer is of a size of 200 μ m-20mm.
Further, said silver-colored inside casing size of moving the barrier layer equals mirror layer frame size.
Further, the said silver-colored inside casing that moves the barrier layer is of a size of 200 μ m-20mm.
Further, the housing size on said silver migration barrier layer equals led chip frame size, and its inside casing size equals mirror layer frame size.
Preferably, said silver-colored housing size and inside casing difference in size of moving the barrier layer is 5 μ m-200 μ m.
Further, said silver migration barrier layer housing and inside casing are shaped as a kind of or combination in square, rectangle, circle or the polygon.
Visible by technique scheme, compare the disclosed led chip of the utility model with existing through the technology that on silver-colored mirror layer, adopts noble metal loading to form the barrier layer; Utilize the peripheral silver migration barrier layer of metal function layer; Prevent its diffusion and electromigration takes place, and, improved the led chip reliability along being with the led chip that is manufactured with passivating film; And work simplification has reduced cost.
Description of drawings
Fig. 1 is the manufacture method flow process of a kind of led chip of the utility model;
Fig. 2 a to 2k is the manufacturing approach of Fig. 1;
Fig. 3 is the vertical view of Fig. 2 d.
Embodiment
For above-mentioned purpose, the feature and advantage that make the utility model can be more obviously understandable, the embodiment of the utility model is done detailed explanation below in conjunction with accompanying drawing.
A lot of details have been set forth in the following description so that make much of the utility model.But the utility model can be implemented much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of the utility model intension, so the utility model does not receive the restriction of following disclosed practical implementation.
Secondly, the utility model utilizes sketch map to be described in detail, when the utility model embodiment is detailed; For ease of explanation; The profile of expression device architecture can be disobeyed general ratio and done local the amplification, and said sketch map is instance, and it should not limit the scope of the utility model protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Referring to Fig. 1, a kind of led chip manufacture method flow process that the utility model provided is:
S100: a substrate is provided, on the surface of said substrate, forms epitaxial loayer, said epitaxial loayer deposits successively from the bottom to top and includes N type layer, luminescent layer and P type layer;
S101: etching P type layer, luminescent layer, form run through P type layer, luminescent layer from top to bottom, up to the step of N type layer;
S102: deposition of insulative material covers said step side, said N type layer and said P type layer, and the insulating material through etching P type laminar surface forms silver migration barrier layer and window, and each window bottom-exposed goes out P type layer;
S103: form the metal function layer at said each window.
Be example with method flow shown in Figure 1 below,, a kind of manufacture craft of led chip be described in detail in conjunction with accompanying drawing 2a to 2k and Fig. 3.
S100: a substrate is provided, on the surface of said substrate, forms epitaxial loayer, said epitaxial loayer deposits successively from the bottom to top and includes N type layer, luminescent layer and P type layer.
Referring to Fig. 2 a, a substrate 100 is provided, at said substrate 100 growing epitaxial layers 108, said substrate 100 is a Sapphire Substrate, said epitaxial loayer 108 comprises N type layer 102, luminescent layer 104 and the P type layer 106 of growth from the bottom to top successively.
S101: etching P type layer, luminescent layer, form run through P type layer, luminescent layer from top to bottom, up to the step of N type layer.
Referring to Fig. 2 b, on said epitaxial loayer 108, adopt ICP (inductively coupled plasma) to etch step 110, said step 110 runs through said P type layer 106, luminescent layer 104 from top to bottom, and etching stopping is on said N type layer 102 surface.Certainly, also can continue etched portions N type layer, form step, etching stopping is in said N type layer.
S102: deposition of insulative material covers said step side, said N type layer and said P type layer, and the insulating material through etching P type laminar surface forms silver migration barrier layer and window, and each window bottom-exposed goes out P type layer.
At first; Referring to Fig. 2 c; Can strengthen chemical vapour deposition (CVD) (PECVD), evaporation or the said step of sputtering technology formation insulating material 112 coverings 110 sides, said N type layer 102 and said P type layer 106 by using plasma, preferred, adopt PECVD to form insulating material 112.The thickness of said insulating material 112 is 100nm-10000nm, and preferred, the thickness of said insulating material 112 is 500nm.Said insulating material 112 is a kind of or combination in silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, aluminium oxide, aluminium nitride, titanium oxide and other dielectric insulating film.
Secondly, referring to Fig. 2 d, adopt photoetching process to form the insulating material 112 of patterning; Then; (Buffered Oxide Etcher, the BOE) insulating material 112 of corrosion patternization form silver migration barrier layer 114a and window 116 on said P type layer 106 surface to adopt the oxide etching buffer solution; The insulating material that on said step 110 surfaces, keeps serves as passivating film 114b, and each window 116 bottom-exposed goes out said P type layer 106.
S103: form the metal function layer at said each window.
Referring to Fig. 2 e, at first, in each window 116, adopt electron beam evaporation process on said P type layer 106 surface, to deposit the metal function layer 118 that includes P type contact layer 120 and mirror layer 122 successively; In order better to prevent the generation of silver diffusion or ELECTROMIGRATION PHENOMENON, can also on mirror layer 122, adopt electron beam evaporation process deposition barrier layer 124, form the metal function layer 118 that includes P type contact layer 120, mirror layer 122 and barrier layer 124.Secondly, in nitrogen (N2) atmosphere, carry out high temperature rapid thermal annealing, said high temperature is 500 ℃, and annealing time is 20min.Then, peel off the metal material that forms P type contact layer 120, mirror layer 122 and barrier layer 124 on the said silver migration 114a surface, barrier layer respectively.The material that said P type contact layer 120 uses is nickel, and preferred, the thickness of said P type contact layer 120 is 0.5nm; The material that said mirror layer 122 uses is silver, and the thickness of said mirror layer is 50nm-500nm, and preferred, the thickness of said mirror layer 122 is 200nm; The material that said barrier layer 124 uses is platinum, and preferred, the thickness of said barrier layer 124 is 300nm.Referring to Fig. 4, Fig. 4 is the vertical view of Fig. 2 e.
Because said silver migration barrier layer is positioned at the periphery of mirror layer, in order to prevent said mirror layer diffusion and ELECTROMIGRATION PHENOMENON takes place, therefore, determined the inside casing size d2 on said silver migration barrier layer to equal mirror layer frame size.Preferably, the said silver-colored inside casing size d2 that moves the barrier layer is 200 μ m-20mm.And the inside casing on said silver migration barrier layer is shaped as a kind of or combination in square, rectangle, circle or the polygon, the shape of the mirror layer that its inside casing shape is made with the need and thereupon changing.
Wherein, after forming said window 116, form before the metal function layer 118, can also clean epitaxial loayer 108 earlier, can better form good P type ohmic contact like this, preferred, adopt the boiling chloroazotic acid to boil epitaxial loayer 108,20min again washes by water.
Certainly, form after the said metal function layer 118, can also proceed following process, accomplish the making of led chip, comprise the steps:
S104: etch N electrode groove in the silver migration barrier layer on said step, and in said N electrode groove, form the N electrode.
Referring to Fig. 2 f, etch N electrode groove among the silver migration barrier layer 114b on said step 110, and in said N electrode groove, adopt the mode of evaporation or sputter to form N electrode 128.The surface of said N electrode 128 and metal function layer 118 surperficial concordant.
S105: the surface at said silver migration barrier layer, metal function layer and N electrode forms first bonded layer.
Referring to Fig. 2 g; The evaporation technology plated metal is adopted on surface at said silver migration barrier layer 114a, metal function layer 118 and N electrode 128; Form first bonded layer 130, the material that said first bonded layer 130 uses is gold, and the thickness of said first bonded layer 130 is 1.5 μ m.
S106: a substrate is provided, and the one side of said substrate is formed with second bonded layer, and in said second bonded layer, etches an opening.
Referring to Fig. 2 h; One substrate 132 is provided; Said substrate 132 is an insulated substrate, and adopting evaporation technology to form thickness in the one side of said substrate 132 is second bonded layer 134 of 1.5 μ m, and adopts photoetching process to form second bonded layer 134 of patterning; And second bonded layer 134 of patterning etched an opening 136, said open bottom exposes substrate 132.
S107: between the N electrode of said opening corresponding to silver migration barrier layer and next-door neighbour, first bonded layer and second bonded layer are carried out bonding, process led chip.
Referring to Fig. 2 i, said opening 136 corresponding to the position between said silver migration barrier layer 114a and next-door neighbour's the said N electricity layer 128, is bonded together to first bonded layer 130 on the epitaxial loayer 108 and second bonded layer 134 on the substrate 132, form led chip.The temperature of said bonding is that 300 ℃, the pressure of bonding are 5T, and the time of bonding is 5min, and first bonded layer and second bonded layer are bonded together through solid-state diffusion, substrate is played support and thermolysis.
The led chip frame size that the housing size d1 on said silver migration barrier layer equals to form.Preferably, the said silver-colored housing size d1 that moves the barrier layer is 200 μ m-20mm.Further, the housing size d1 and the inside casing difference in size d2 on said silver migration barrier layer are 5 μ m-200 μ m, and promptly said silver migration barrier layer frame is wide to be 5 μ m-200 μ m.The inside casing on wherein said silver migration barrier layer is shaped as a kind of or combination in square, rectangle, circle or the polygon, the shape of the led chip that its housing shape is made with the need and thereupon changing.
Preferably, through the said substrate of chemical Mechanical Polishing Technique (CMP) attenuate 100 to desired thickness, shown in Fig. 2 j.
Preferably, can also make the nanometer mask plate, be mask with this nanometer mask plate, adopts dry etch process to handle said substrate, makes said substrate surface alligatoring, shown in Fig. 2 k, forms the plane flip led chip.
For this reason; Manufacture method based on above-mentioned led chip; The utility model provides a kind of led chip; Shown in Fig. 2 k, comprise at least: epitaxial loayer 108, said epitaxial loayer 108 comprise N type layer 102, are positioned at the luminescent layer 104 on the said N type layer 102 and are positioned at the P type layer 106 on the said luminescent layer 104; Metal function layer 118, said metal function layer 118 are positioned on the said P type layer 106; Silver migration barrier layer 114a, said silver migration barrier layer 114a is positioned on the said P type layer 106, and is positioned at said metal function layer 118 periphery.
Further, the metal function layer 118 that on said P type layer 106, forms includes P type contact layer 120 and mirror layer 122 from the bottom to top successively, or P type contact layer 120, mirror layer 122 and barrier layer 124.
Further, be formed with first bonded layer 130, second bonded layer 134 and substrate 132 on the surface of metal function layer 118, silver migration barrier layer 114a and the N electrode opposite successively with said epitaxial loayer 108.
Further, said substrate is the substrate of surface coarsening.
For this reason, a side that is close to said silver migration barrier layer is formed with the step that runs through P type layer, luminescent layer, and the silver migration barrier layer of this side is extended the surface that covers said step and formed passivating film; Be formed with N electrode groove in the silver migration barrier layer on the said ledge surface, be arranged in said N electrode groove and be formed with the N electrode; The surface that is positioned at metal function laminar surface, silver migration barrier layer and N electrode is formed with first bonded layer and second bonded layer successively, is positioned at the second bonded layer surface and is formed with substrate, has formed the led chip of plane flip structure.
Though the utility model with preferred embodiment openly as above; But it is not to be used for limiting claim; Any those skilled in the art are in spirit that does not break away from the utility model and scope; Can make possible change and modification, like the material and the manufacture method of dielectric insulating film, so the protection range of the utility model should be as the criterion with the scope that the utility model claim is defined.
Claims (14)
1. a led chip is characterized in that, comprises at least:
Epitaxial loayer, said epitaxial loayer comprise N type layer, are positioned at the luminescent layer on the said N type layer and are positioned at the P type layer on the said luminescent layer;
Metal function layer, said metal function layer are positioned on the said P type layer;
Silver migration barrier layer, said silver migration barrier layer is positioned on the said P type layer, and it is peripheral to be positioned at said metal function layer.
2. led chip according to claim 1 is characterized in that: said metal function layer includes P type contact layer, mirror layer or P type contact layer, mirror layer and the barrier layer that is formed at P type laminar surface successively.
3. according to each described led chip in claim 1 or 2; It is characterized in that: a side that is close to said silver migration barrier layer is formed with the step that runs through P type layer, luminescent layer, and the silver migration barrier layer of this side is extended the surface that covers said step and formed passivating film; Be formed with N electrode groove in the silver migration barrier layer on the said ledge surface, be arranged in said N electrode groove and be formed with the N electrode; The surface that is positioned at metal function laminar surface, silver migration barrier layer and N electrode is formed with first bonded layer and second bonded layer successively, is positioned at the second bonded layer surface and is formed with substrate.
4. led chip according to claim 3 is characterized in that: the material that use on said silver migration barrier layer is insulating material.
5. led chip according to claim 4 is characterized in that: said insulating material is a kind of or combination in silicon dioxide, silicon nitride, nitrogen-oxygen-silicon, aluminium oxide, aluminium nitride, the titanium oxide.
6. led chip according to claim 5 is characterized in that: the thickness on said silver migration barrier layer is 100nm-10000nm.
7. led chip according to claim 6 is characterized in that: the thickness of said mirror layer is 50nm-500nm.
8. led chip according to claim 4 is characterized in that: the housing size on said silver migration barrier layer equals led chip frame size.
9. led chip according to claim 8 is characterized in that: the housing on said silver migration barrier layer is of a size of 200 μ m-20mm.
10. led chip according to claim 4 is characterized in that: the inside casing size on said silver migration barrier layer equals mirror layer frame size.
11. led chip according to claim 10 is characterized in that: the inside casing on said silver migration barrier layer is of a size of 200 μ m-20mm.
12. led chip according to claim 4 is characterized in that: the housing size on said silver migration barrier layer equals led chip frame size, and its inside casing size equals mirror layer frame size.
13. led chip according to claim 12 is characterized in that: the housing size and the inside casing difference in size on said silver migration barrier layer are 5 μ m-200 μ m.
14. led chip according to claim 4 is characterized in that: said silver migration barrier layer housing and inside casing are shaped as a kind of or combination in square, rectangle, circle or the polygon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220195686 CN202601710U (en) | 2012-05-03 | 2012-05-03 | LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220195686 CN202601710U (en) | 2012-05-03 | 2012-05-03 | LED chip |
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| CN202601710U true CN202601710U (en) | 2012-12-12 |
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| CN 201220195686 Expired - Lifetime CN202601710U (en) | 2012-05-03 | 2012-05-03 | LED chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637790A (en) * | 2012-05-03 | 2012-08-15 | 杭州士兰明芯科技有限公司 | LED (light emitting diode) chip and corresponding manufacturing method thereof |
| CN102646765A (en) * | 2012-05-03 | 2012-08-22 | 杭州士兰明芯科技有限公司 | Light-emitting diode (LED) chip and corresponding manufacturing method thereof |
| CN104269480A (en) * | 2014-10-22 | 2015-01-07 | 湘能华磊光电股份有限公司 | LED flip chip and manufacturing method thereof |
| CN104465974A (en) * | 2014-12-03 | 2015-03-25 | 佛山市国星半导体技术有限公司 | Light-emitting diode and manufacturing method thereof |
-
2012
- 2012-05-03 CN CN 201220195686 patent/CN202601710U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637790A (en) * | 2012-05-03 | 2012-08-15 | 杭州士兰明芯科技有限公司 | LED (light emitting diode) chip and corresponding manufacturing method thereof |
| CN102646765A (en) * | 2012-05-03 | 2012-08-22 | 杭州士兰明芯科技有限公司 | Light-emitting diode (LED) chip and corresponding manufacturing method thereof |
| CN104269480A (en) * | 2014-10-22 | 2015-01-07 | 湘能华磊光电股份有限公司 | LED flip chip and manufacturing method thereof |
| CN104269480B (en) * | 2014-10-22 | 2017-06-16 | 湘能华磊光电股份有限公司 | A kind of LED flip chip and preparation method thereof |
| CN104465974A (en) * | 2014-12-03 | 2015-03-25 | 佛山市国星半导体技术有限公司 | Light-emitting diode and manufacturing method thereof |
| CN104465974B (en) * | 2014-12-03 | 2017-08-04 | 佛山市国星半导体技术有限公司 | A kind of light emitting diode and preparation method thereof |
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Granted publication date: 20121212 |