CN108242441A - 一种led - Google Patents
一种led Download PDFInfo
- Publication number
- CN108242441A CN108242441A CN201611202975.8A CN201611202975A CN108242441A CN 108242441 A CN108242441 A CN 108242441A CN 201611202975 A CN201611202975 A CN 201611202975A CN 108242441 A CN108242441 A CN 108242441A
- Authority
- CN
- China
- Prior art keywords
- substrate
- heat
- conducting block
- luminescence
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004020 luminiscence type Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000741 silica gel Substances 0.000 claims abstract description 12
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本发明公开了一种led,包括基板、导热块、左电极、右电极、发光芯片和硅胶,其特征在于:所述的导热块在基板内,为同一平面层,所述的左电极在基板的左端,所述的右电极在基板的右端,所述的发光芯片在导热块上,所述的硅胶在基板上,所述的发光芯片在硅胶内;其特征还在于:所述的发光芯片为三颗发光芯片。本发明公开的一种led,使用三颗发光芯片并联连接在电极上,在利用导热块的导热作用将发光芯片的热量散发出去,形成高亮的led。
Description
技术领域
本发明涉及led分装结构领域,尤其是一种led。
背景技术
发光二极管简称为LED。由含镓(Ga)、砷(As)、磷(P)、氮(N)等的化合物制成。当电子与空穴复合时能辐射出可见光,因而可以用来制成发光二极管。在电路及仪器中作为指示灯,或者组成文字或数字显示。砷化镓二极管发红光,磷化镓二极管发绿光,碳化硅二极管发黄光,氮化镓二极管发蓝光。因化学性质又分有机发光二极管OLED和无机发光二极管LED。
Led虽然具有以上的特点,但是在大功率上还是欠缺,尤其是需要极高亮度的产所,单颗led无法胜任。
发明内容
针对以上问题,本发明公开的本发明公开的一种led,使用三颗发光芯片并联连接在电极上,在利用导热块的导热作用将发光芯片的热量散发出去,形成高亮的led。
本发明公开的一种led,包括基板、导热块、左电极、右电极、发光芯片和硅胶,其特征在于:所述的导热块在基板内,为同一平面层,所述的左电极在基板的左端,所述的右电极在基板的右端,所述的发光芯片在导热块上,所述的硅胶在基板上,所述的发光芯片在硅胶内;其特征还在于:所述的发光芯片为三颗发光芯片。
本发明公开的一种led,具有可靠的散热性,以及满足高亮度的使用要求。
附图说明
图1位本发明的结构示意图。
1、基板 2、导热块 3、左电极 4、右电极 5、发光芯片 6、硅胶。
具体实施方式
下面结合附图和具体实施方式,进一步阐明本发明,应理解下述具体实施方式仅用于说明本发明而不用于限制本发明的范围,在阅读了本发明之后,本领域技术人员对发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。
如图1所示,本发明公开了一种led,包括基板、导热块、左电极、右电极、发光芯片和硅胶,其特征在于:所述的导热块在基板内,为同一平面层,所述的左电极在基板的左端,所述的右电极在基板的右端,所述的发光芯片在导热块上,所述的硅胶在基板上,所述的发光芯片在硅胶内;其特征还在于:所述的发光芯片为三颗发光芯片。
作为一种优选,所述的三颗发光芯片为同一颜色发光芯片。
作为一种优选,所述的三颗发光芯片的颜色为白色。
作为一种优选,所述的三颗发光芯片的颜色为红色。
作为一种优选,所述的三颗发光芯片的颜色为蓝色。
作为一种优选,所述的三颗发光芯片的颜色为黄色。
作为一种优选,所述的导热块为铝材料制成。
作为一种优选,所述的导热块为铜材料制成。
作为一种优选,所述的导热块为合金材料制成。
Claims (4)
1.一种led,包括基板、导热块、左电极、右电极、发光芯片和硅胶,其特征在于:所述的导热块在基板内,为同一平面层,所述的左电极在基板的左端,所述的右电极在基板的右端,所述的发光芯片在导热块上,所述的硅胶在基板上,所述的发光芯片在硅胶内;其特征还在于:所述的发光芯片为三颗发光芯片。
2.根据权利要求1所述的一种led,其特征在于:所述的三颗发光芯片为同一颜色发光芯片。
3.根据权利要求2所述的一种led,其特征在于:所述的三颗发光芯片的颜色为白色、红色、蓝色、黄色。
4.根据权利要求1所述的一种led,其特征在于:所述的导热块为铝、铜、合金材料制成。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611202975.8A CN108242441A (zh) | 2016-12-23 | 2016-12-23 | 一种led |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611202975.8A CN108242441A (zh) | 2016-12-23 | 2016-12-23 | 一种led |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108242441A true CN108242441A (zh) | 2018-07-03 |
Family
ID=62703390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201611202975.8A Pending CN108242441A (zh) | 2016-12-23 | 2016-12-23 | 一种led |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108242441A (zh) |
-
2016
- 2016-12-23 CN CN201611202975.8A patent/CN108242441A/zh active Pending
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Application publication date: 20180703 |