CN108231570A - The manufacturing method of intermediary layer - Google Patents
The manufacturing method of intermediary layer Download PDFInfo
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- CN108231570A CN108231570A CN201711282902.9A CN201711282902A CN108231570A CN 108231570 A CN108231570 A CN 108231570A CN 201711282902 A CN201711282902 A CN 201711282902A CN 108231570 A CN108231570 A CN 108231570A
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- glass substrate
- laminated body
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- intermediary
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 187
- 239000011521 glass Substances 0.000 claims abstract description 155
- 238000000034 method Methods 0.000 claims abstract description 134
- 238000005520 cutting process Methods 0.000 claims abstract description 81
- 230000011218 segmentation Effects 0.000 claims abstract description 79
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 46
- 238000012986 modification Methods 0.000 claims abstract description 36
- 230000004048 modification Effects 0.000 claims abstract description 36
- 230000035699 permeability Effects 0.000 claims abstract description 14
- 239000011148 porous material Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000001351 cycling effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Laser Beam Processing (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The manufacturing method of intermediary layer is provided, improves the heat resistance for the intermediary layer for having used glass substrate.The manufacturing method of intermediary layer produces multiple intermediary layers from material substrate, the material substrate has glass substrate and laminated body, wherein, the glass substrate is divided into multiple regions by a plurality of segmentation preset lines of clathrate setting, the laminate layers are stacked on the 1st face of glass substrate or the 2nd face of the side opposite with the 1st face, and comprising insulating layer and wiring layer, this method includes following process：Cutting slot formation process makes cutting tool form the cutting slot for the depth for not reaching glass substrate in laminated body along the exposed surface of segmentation preset lines incision laminated body；Layer formation process is modified, the focal point of the laser beam of the wavelength for glass substrate with permeability is located in the inside of glass substrate along cutting slot and forms modification layer；And segmentation process, external force is applied to glass substrate and glass substrate is split along modification layer, produces multiple intermediary layers.
Description
Technical field
The present invention relates to the manufacturing methods for the intermediary layer for having used glass substrate.
Background technology
It is practical to be overlapped semiconductor in a thickness direction in order to realize smallerization of semiconductor device, highly integrated
Chip and utilize through electrode (TSV：Through Silicon Via：Silicon hole) the three-dimensional mounting technique that is attached.But
It is, in the three-dimensional mounting technique, due to being overlapped multiple semiconductor chips in a thickness direction, so easily dropping thermal diffusivity
Semiconductor chip that is low, can not also using size different.In addition, also in the presence of manufacture cost easily with running through semiconductor chip
Through electrode formation and the problem of increase.
In recent years, it is also proposed that by using silicon wafer and the intermediary layer (relaying substrate) that is formed multiple is partly led to install
The mounting technique of body chip (for example, referring to patent document 1).The mounting technique is also referred to as 2.5 dimension mounting techniques etc., for example,
Semiconductor chip with store function and the semiconductor chip with calculation function connect according to nonoverlapping mode and intermediary layer
It connects.In 2.5 dimension mounting techniques, since at least part semiconductor chip is not overlapped in a thickness direction, so easily solving
The various problems of above-mentioned three-dimensional mounting technique.
On the other hand, also there are the loss in high-frequency region is larger, higher price in the intermediary layer for having used silicon wafer
The problem of.Therefore, it is proposed to loss and the cheap glass advantageously reduced in high-frequency region is used in intermediary layer
The technology of substrate (for example, referring to patent document 2).For example, it is formed on the interarea of at least one party of glass substrate comprising insulation
The laminated body of layer and wiring layer is split glass substrate then along preset segmentation preset lines and obtains the intermediary
Layer.
Patent document 1：Japanese Unexamined Patent Application Publication 2003-503855 bulletins
Patent document 2：Japanese Unexamined Patent Publication 2015-198212 bulletins
In general, using the cutting tool of rotation is made to carry out point of glass substrate along the method for segmentation preset lines incision
It cuts.But by this method manufacture intermediary layer there are problems in terms of heat resistance.Specifically, for example, when to the intermediary layer
Carry out temperature cycling test (TCT：Temperature Cycling Test) when, can crack on the glass substrate or
Laminated body is removed from glass substrate and increases defect rate.
Invention content
The present invention be in view of the problem points and complete, it is intended that provide intermediary layer manufacturing method, can improve
The heat resistance of the intermediary layer of glass substrate is used.
A mode according to the present invention provides the manufacturing method of intermediary layer, multiple intermediary layers is produced from material substrate,
The material substrate has glass substrate and laminated body, wherein, the glass substrate is by a plurality of segmentation preset lines of clathrate setting
Multiple regions are divided into, which is stacked on the 1st face of the glass substrate or the 2nd face of the side opposite with the 1st face,
And the laminated body includes insulating layer and wiring layer, and the manufacturing method of the intermediary layer includes following process：Cutting slot forms work
Sequence makes cutting tool cut the exposed surface of the laminated body along the segmentation preset lines, is formed in the laminated body and do not reach the glass
The cutting slot of the depth of glass substrate；Layer formation process is modified, by the laser beam of the wavelength for the glass substrate with permeability
Focal point be located in the inside of the glass substrate along the cutting slot and form modification layer；And segmentation process, to the glass
Substrate applies external force and the glass substrate is split along the modification layer, produces multiple intermediary layers.
Also, another mode according to the present invention provides the manufacturing method of intermediary layer, is produced from material substrate multiple
Intermediary layer, the material substrate have glass substrate and laminated body, wherein, the glass substrate is by a plurality of segmentation of clathrate setting
Preset lines are divided into multiple regions, the laminate layers be stacked in the glass substrate the 1st face or the side opposite with the 1st face
On 2 faces, and the laminated body includes insulating layer and wiring layer, and the manufacturing method of the intermediary layer includes following process：Cutting slot
Formation process makes cutting tool cut the exposed surface of the laminated body along the segmentation preset lines, is formed in the laminated body and do not arrived
Up to the cutting slot of the depth of the glass substrate；Shield tunnel formation process will have the glass substrate wavelength of permeability
The focal point of laser beam the inside of the glass substrate is located in along the cutting slot, so as to be formed with pore and noncrystalline area
The shield tunnel in domain, wherein, which extends on the thickness direction of the glass substrate, which surrounds the pore；
And segmentation process, external force is applied to the glass substrate and the glass substrate is split along the shield tunnel, is produced
Multiple intermediary layers.
Also, another mode according to the present invention provides the manufacturing method of intermediary layer, is produced from material substrate multiple
Intermediary layer, the material substrate have glass substrate and laminated body, wherein, the glass substrate is by a plurality of segmentation of clathrate setting
Preset lines are divided into multiple regions, the laminate layers be stacked in the glass substrate the 1st face or the side opposite with the 1st face
On 2 faces, and the laminated body includes insulating layer and wiring layer, and the manufacturing method of the intermediary layer includes following process：Laser adds
Work slot formation process has absorbent wave to the exposed surface irradiation of the laminated body along the segmentation preset lines for the laminated body
Long laser beam forms the laser processing groove for the depth for not reaching the glass substrate in the laminated body；Layer formation process is modified,
The focal point of the laser beam of the wavelength for the glass substrate with permeability is located in the glass along the laser processing groove
The inside of substrate and form modification layer；And segmentation process, to glass substrate application external force along the modification layer to the glass
Glass substrate is split, and produces multiple intermediary layers.
Also, another mode according to the present invention provides the manufacturing method of intermediary layer, is produced from material substrate multiple
Intermediary layer, the material substrate have glass substrate and laminated body, wherein, the glass substrate is by a plurality of segmentation of clathrate setting
Preset lines are divided into multiple regions, the laminate layers be stacked in the glass substrate the 1st face or the side opposite with the 1st face
On 2 faces, and the laminated body includes insulating layer and wiring layer, and the manufacturing method of the intermediary layer includes following process：Laser adds
Work slot formation process has absorbent wave to the exposed surface irradiation of the laminated body along the segmentation preset lines for the laminated body
Long laser beam forms the laser processing groove for the depth for not reaching the glass substrate in the laminated body；Shield tunnel forms work
The focal point of the laser beam of the wavelength for the glass substrate with permeability is located in the glass by sequence along the laser processing groove
The inside of glass substrate, so as to form the shield tunnel with pore and amorphous regions, wherein, the pore is in the glass substrate
Extend on thickness direction, which surrounds the pore；And segmentation process, to the glass substrate apply external force and along
The shield tunnel is split the glass substrate, produces multiple intermediary layers.
The manufacturing method of intermediary layer according to the present invention does not reach glass being formd in laminated body along segmentation preset lines
After the slot (cutting slot or laser processing groove) of the depth of glass substrate, by the laser of the wavelength for glass substrate with permeability
The focal point of beam (modifies layer or shield along the construction that the slot is located in the inside of glass substrate and forms the starting point as segmentation
Tunnel), leave relatively thin laminated body in the end of intermediary layer for being split and producing to glass substrate.
When the thicker previous intermediary layer of the laminated body to end heats, to end effect have because glass substrate with
Larger power caused by the difference of the coefficient of thermal expansion of laminated body, laminated body are easily removed from glass substrate.In contrast, exist
By in intermediary layer produced by the present invention, since the laminated body of end is thinning, so with the intermediary that is manufactured by previous method
Layer is compared, it is not easy to the larger power for removing laminated body to end effect.
That is, even if to being heated by intermediary layer produced by the present invention, laminated body is also not easy from glass base
Plate is removed.In this way, the manufacturing method of intermediary layer according to the present invention, the heat-resisting of the intermediary layer that has used glass substrate can be improved
Property.
Description of the drawings
(A) of Fig. 1 is the stereogram for the configuration example for being shown schematically in the material substrate used in present embodiment, figure
1 (B) is sectional view obtained by a part (region A) for material substrate is amplified.
(A) of Fig. 2 and (B) of Fig. 2 are the side elevation in partial section for illustrating cutting slot formation process.
(A) of Fig. 3 is the broken section of modification layer formation process for illustrating to carry out after cutting slot formation process
Side view, (B) of Fig. 3 are the stereograms of the configuration example of intermediary layer for schematically showing segmented process and manufacturing.
(A) of Fig. 4 and (B) of Fig. 4 are the broken section side views for illustrating the manufacturing method of the intermediary layer of the 1st variation
Figure.
(A) of Fig. 5 and (B) of Fig. 5 are the broken section side views for illustrating the manufacturing method of the intermediary layer of the 2nd variation
Figure.
(A) of Fig. 6 and (B) of Fig. 6 are the broken section side views for illustrating the manufacturing method of the intermediary layer of the 3rd variation
Figure.
Label declaration
1：Material substrate；3：Intermediary layer；11：Glass substrate；11a：1st face (front)；11b：2nd face (back side)；11c：
Through hole；13：Divide preset lines (spacing track)；15：Laminated body；15a：Exposed surface；15b：Cutting slot；15c：Laser processing groove；
17：Wiring layer；19：Insulating layer；21：Electrode；23：Modify layer；25：Shield tunnel；25a：Pore；25b：Amorphous regions；2：
Cutting tool；4：Laser beam irradiation unit；6：Laser beam irradiation unit；L1、L2、L3：Laser beam.
Specific embodiment
The embodiment of one embodiment of the present invention is illustrated with reference to attached drawing.The manufacture of the intermediary layer of present embodiment
Method is the method for producing multiple intermediary layers from the material substrate with glass substrate and laminated body, includes cutting flute profile
Into process (with reference to (A) of Fig. 2 and (B) of Fig. 2), modification layer formation process (with reference to (A) of Fig. 3) and segmentation process (reference
(B) of Fig. 3).
In cutting slot formation process, cutting tool is made to cut laminated body along the segmentation preset lines for being set in glass substrate
Exposed surface, the cutting slot of the depth for not reaching glass substrate is formed in laminated body.It, will be in layer formation process is modified
Glass substrate has the inside that the focal point of the laser beam of the wavelength of permeability is located in glass substrate along cutting slot, is formed and made
The modification layer of starting point for segmentation.
In segmentation process, glass substrate along modification layer is split by applying external force to glass substrate, is made
Produce multiple intermediary layers.Hereinafter, the manufacturing method of the intermediary layer of present embodiment is described in detail.
(A) of Fig. 1 is to be shown schematically in the stereogram of the configuration example of material substrate 1 used in present embodiment,
(B) of Fig. 1 is sectional view obtained by a part (region A) for material substrate 1 is amplified.For example, use discoid glass base
Plate 11 forms the material substrate 1 of present embodiment, and the glass substrate 11 is by glass such as soda-lime glass, alkali-free glass, quartz glass
Glass is made, which is divided into multiple regions by a plurality of segmentation preset lines (spacing track) 13 of clathrate setting.
On the 1st face (front) 11a of glass substrate 11 and the 2nd face (back side) 11b of the side opposite with the 1st face 11a,
It is respectively arranged with the laminated body 15 being laminated by multiple layers (film).The laminated body 15 is made of comprising the conductor by metal
Wiring layer 17 and the insulating layer 19 made of the insulators such as resin will be insulated by insulating layer 19 between adjacent wiring layer 17.
Also, the through hole 11c from the 1st face 11a towards the 2nd face 11b perforations is formed on glass substrate 11.It is penetrating through
Embedment has the electrode 21 made of the conductors such as metal in the 11c of hole.The wiring of 17 and the 2nd face 11b sides of wiring layer in the 1st face 11a sides
Layer 17 is connected via the electrode 21.
In addition, it in the present embodiment, instantiates on two faces of the 1st face 11a and the 2nd face 11b of glass substrate 11
Material substrate 1 with laminated body 15, but laminated body 15 can also be provided only on the side in the 1st face 11a and the 2nd face 11b.
In this case, additionally it is possible to omit through hole 11c or electrode 21 etc..Also, laminated body 15 (wiring layer 17, insulating layer 19) passes through
Structure and forming method of through-hole 11c, electrode 21 etc. etc. are also not particularly limited.
By being split along segmentation preset lines 13 to the material substrate 1 formed in this way, multiple intermediaries can be produced
Layer 3 (with reference to (B) of Fig. 3).In the manufacturing method of the intermediary layer of present embodiment, first, cutting slot formation process is carried out, is made
Cutting tool cuts the exposed surface of laminated body 15 along segmentation preset lines 13, is formed in laminated body and does not reach glass substrate 11
The cutting slot of depth.
(A) of Fig. 2 and (B) of Fig. 2 are the side elevation in partial section for illustrating cutting slot formation process.In the cutting slot
In formation process, for example, using cricoid cutting tool 2, which utilizes the bond materials such as resin or metal by Buddha's warrior attendant
The abrasive grains such as stone are fixed and are formed as defined width (length, thickness in horizontal direction).
The material of abrasive grain or resin for forming cutting tool 2 is suitably set according to material of laminated body 15 etc..Bite
The grain size that tool 2 includes abrasive grain is not particularly limited, but for example, 20 μm~40 μm or so, preferably 25 μm~35 μm left sides
Right (representative is 30 μm or so).The width of cutting tool 2 is also not particularly limited, but for example, 150 μm~500 μm,
Preferably 200 μm~300 μm or so.
The cutting tool 2 is mounted on one end of the main shaft (not shown) as the rotary shaft substantially parallel with horizontal direction
Side.The connection (not shown) of the rotary driving sources such as the another side of main shaft and motor, be installed on the cutting tool 2 of main shaft by from
The rotary driving source transmit power and rotate.
In cutting slot formation process, first, material substrate 1 is kept into the 1st face 11a sides direction for making glass substrate 11
Top.For example, the holding of material substrate 1 can be carried out using chuck table (not shown) etc..Then, to material substrate 1
Opposite position is adjusted with cutting tool 2, makes cutting tool 2 right on the arbitrarily extended line of segmentation preset lines 13
Together.
Also, the lower end of cutting tool 2 is aligned in lower than the exposed surface 15a of the laminated body 15 of the 1st face 11a sides and compares glass
The position of 1st face 11a high of glass substrate 11.Later, rotate cutting tool 2 and make material substrate 1 and cutting tool 2 along with
It relatively moves in the direction parallel as the segmentation preset lines 13 of object.
As a result, as shown in (A) of Fig. 2, cutting tool 2 is made to cut the 1st face 11a along the segmentation preset lines 13 as object
The exposed surface 15a of the laminated body 15 of side can form the depth for not reaching glass substrate 11 in the laminated body 15 of the 1st face 11a sides
The cutting slot 15b of degree.
In addition, the position of the lower end of cutting tool 2 is adjusted to the 1st from the bottom of cutting slot 15b to glass substrate 11
The distance of face 11a is, for example, 1 μm~30 μm or so (preferably 2 μm~20 μm or so).That is, leave example along segmentation preset lines 13
Such as laminated body 15 of the thickness for 1 μm~30 μm or so (preferably 2 μm~20 μm or so).Thereby, it is possible to suitably mitigate because heated
And the power generated in the end of intermediary layer 3, prevent the stripping of laminated body 15.
Formd in the laminated body 15 of the 1st face 11a sides along the segmentation preset lines 13 as object cutting slot 15b it
Afterwards, repeat above-mentioned action and cutting is formed in the laminated body 15 of the 1st face 11a sides along whole segmentation preset lines 13
Slot 15b.Later, make spinning upside down for material substrate 1 and as shown in (B) of Fig. 2, according to same process in the 2nd face 11b sides
Cutting slot 15b is formed in laminated body 15.It is formed in the laminated body 15 of the 2nd face 11b sides when along whole segmentation preset lines 13
During cutting slot 15b, cutting slot formation process terminates.
In addition, in the present embodiment, after cutting slot 15b is formd in the laminated body 15 in the 1st face 11a sides,
Cutting slot 15b is formed in the laminated body 15 in the 2nd face 11b sides, but can also form and cut in the laminated body 15 of the 2nd face 11b sides
After cutting slot 15b, cutting slot 15b is formed in the laminated body 15 of the 1st face 11a sides.
After cutting slot formation process, modification layer formation process is carried out, will there is permeability for glass substrate 11
The focal point of the laser beam of wavelength is located in the inside of glass substrate 11 along cutting slot 15b, in the inside shape of glass substrate 11
It is shaped as the modification layer of the starting point as segmentation.(A) of Fig. 3 is the broken section side view for illustrating to modify layer formation process
Figure.
In the modification layer formation process, for example, using laser beam irradiation unit 4, the laser beam irradiation unit 4 is suitable for irradiating
Together in the laser beam L1 of the formation of modification layer.Laser beam irradiation unit 4 has the lens (not shown) of optically focused, will be by laser generation
The laser beam L1 that device (not shown) impulse hunting goes out is irradiated and is assembled in defined position.Laser oscillator is configured to pulse
Vibrate the laser beam L for the wavelength (being not easy absorbed wavelength) that there is permeability for glass substrate 11.
In layer formation process is modified, first, material substrate 1 is kept into the 1st face 11a sides direction for making glass substrate 11
Top.For example, the holding of material substrate 1 can be carried out using chuck table (not shown) etc..Then, to material substrate 1
Opposite position is adjusted with laser beam irradiation unit 4, and making laser beam irradiation unit 4, (segmentation is predetermined in arbitrary cutting slot 15b
Line 13) extended line on be aligned.Also, the position (height) of focal point that laser beam L1 is assembled is made to be aligned in glass substrate 11
Inside.
Then, laser beam L1 is irradiated from laser beam irradiation unit 4 on one side, makes 4 edge of material substrate 1 and laser beam irradiation unit on one side
The direction parallel with the cutting slot 15b (segmentation preset lines 13) as object relatively to move.As a result, such as (A) institute of Fig. 3
Show, it, can be by Multiphoton Absorbtion to glass along cutting slot 15b (segmentation preset lines 13) irradiation laser beam L1 as object
The inside of substrate 11 is modified and is formed the modification layer 23 of the starting point as segmentation.
The model to form modification layer 23 can be suitably being modified to the inside of glass substrate 11 by Multiphoton Absorbtion
Enclose the conditions such as the position (height) of the interior focal point to laser beam L1, the output of spot diameter and laser beam L1 of laser beam L1
It is adjusted.When repeating action as described above and formed and divided along whole cutting slot 15b (segmentation preset lines 13)
During required modification layer 23, modification layer formation process terminates.
In addition, it in the present embodiment, as shown in (A) of Fig. 3, is formed for each cutting slot 15b (segmentation preset lines 13)
3 modification layers 23 being overlapped along the thickness direction of glass substrate 11, but formed for each cutting slot 15b (segmentation preset lines 13)
The quantity for modifying layer 23 is not restricted.For example, can be directed to each cutting slot 15b (segmentation preset lines 13) forms 1 modification layer
23, the modification layer 23 of two or 4 or more along the thickness direction overlapping of glass substrate 11 can also be formed.
Also, laser beam L1 in the present embodiment, is irradiated, but can also be by material to glass substrate 11 from the 1st face 11a sides
Material substrate 1, which is kept into, to be made the 2nd face 11b sides upward and irradiates laser beam L1 to glass substrate 11 from the 2nd face 11b sides.
After layer formation process is modified, be split process, by glass substrate 11 along modification layer 23 be split and
Produce multiple intermediary layers 3.For example, this point is carried out by the method being extended to the expansion bands for being pasted on material substrate 1
Cut process.It is extended by pasting expansion bands to material substrate 1, is expanded so as to apply expansion bands to glass substrate 11
The power (external force) in the direction of exhibition.As a result, 23 pairs of glass substrate 11 of modification layer along the starting point as segmentation are split.
When completing multiple intermediary layers 3 when glass substrate 11 is split along modification layer 23, segmentation process terminates.Separately
Outside, in the present embodiment, glass substrate is divided by the method being extended to the expansion bands for being pasted on material substrate 1
11, but glass substrate 11 can also be divided by other methods.For example, it is also possible to it is applied using roller or rodlike pressing component
Reinforcing (external force) is so as to be split glass substrate 11.
(B) of Fig. 3 is the stereogram of the configuration example of intermediary layer 3 for schematically showing segmented process and manufacturing.Such as Fig. 3
(B) shown in, in the end of intermediary layer 3 manufactured by present embodiment, laminated body 15 is thinner than other regions.Thereby, it is possible to
By power (for example, internal stress) inhibition because resulting from end during the difference of glass substrate 11 and the coefficient of thermal expansion of laminated body 15
To be smaller, the stripping of laminated body 15 can be prevented.
As described above, the manufacturing method of intermediary layer according to the present embodiment, along segmentation preset lines (spacing track)
After 13 form the cutting slot 15b for the depth for not reaching glass substrate 11 in laminated body 15, will have for glass substrate 11
The focal point for having the laser beam L1 of the wavelength of permeability is located in the inside of glass substrate 11 along cutting slot 15b, is formed and made
The modification layer 23 of starting point for segmentation, therefore left in the end of intermediary layer 3 for being split and producing to glass substrate 11
Relatively thin laminated body 15.
When the thicker previous intermediary layer of the laminated body to end heats, to end effect have because glass substrate with
Larger power caused by the difference of the coefficient of thermal expansion of laminated body, laminated body are easily removed from glass substrate.In contrast, exist
In the intermediary layer 3 manufactured by present embodiment, since the laminated body 15 of end is thinning, so with being manufactured by previous method
Intermediary layer compare, it is not easy to the end effect larger power of removing laminated body 15.
That is, even if being heated to the intermediary layer 3 manufactured by present embodiment, laminated body 15 be also not easy from
Glass substrate 11 is removed.In this way, the manufacturing method of intermediary layer 3 according to the present embodiment, can improve and use glass substrate
The heat resistance of 11 intermediary layer 3.
In order to confirm the heat resistance, carry out (125 DEG C, 15 points of low-temperature treatment (- 55 DEG C, 15 minutes) and high-temperature process
Clock) temperature cycling test (TCT of 500 times is repeated respectively：Temperature Cycling Test), as a result in present embodiment
Intermediary layer 6 in, there is no the stripping for finding laminated body 15 in 30 samples all.On the other hand, the laminated body of end compared with
In thick previous intermediary layer, the stripping of laminated body is found that in all 30 samples.
In addition, the record that present invention is not limited to the embodiments described above, can implement various changes.For example, it is also possible to generation
For the modification layer formation process for forming modification layer 23 to be formed the shield tunnel formation process of shield tunnel, wherein, the shield
Structure tunnel has：Pore extends on the thickness direction of glass substrate 11；And amorphous regions, surround the pore.
(A) of Fig. 4 and (B) of Fig. 4 are the broken section side views for illustrating the manufacturing method of the intermediary layer of the 1st variation
Figure.The manufacturing method of the intermediary layer of 1st variation includes cutting slot formation process (with reference to (A) of Fig. 4), shield tunnel forms work
Sequence (with reference to (B) of Fig. 4) and segmentation process.
Work is formed to carry out cutting slot by the same device of cutting slot formation process and process with the above embodiment
Sequence.Specifically, as shown in (A) of Fig. 4, cutting tool 2 is made to cut laminated body 15 along the segmentation preset lines 13 as object
Exposed surface 15a, the cutting slot 15b of the depth for not reaching glass substrate 11 is formed in laminated body 15.When along whole
When segmentation preset lines 13 form cutting slot 15b in the laminated body 15 of 15 and the 2nd face 11b sides of laminated body of the 1st face 11a sides, cut
Slot formation process is cut to terminate.
After cutting slot formation process, shield tunnel formation process is carried out, shield tunnel is formed in glass substrate 11.
It is used in changing for the device of shield tunnel formation process and the basic process of shield tunnel formation process etc. and the above embodiment
Matter layer formation process is similary.But in the shield tunnel formation process, the lens of the optically focused as laser beam irradiation unit 4,
The lens for the use of value obtained by numerical aperture (NA) divided by the refractive index of glass substrate 11 being 0.05~0.8.
As a result, along cutting slot 15b (segmentation preset lines 13) irradiation laser beam L2 as object, can be formed by pore
The shield tunnel 25 that 25a and amorphous regions 25b is formed, wherein, pore 25a prolongs on the thickness direction of glass substrate 11
It stretches, amorphous regions 25b surrounds pore 25a.The inside of glass substrate 11 can carried out suitably by Multiphoton Absorbtion
To the spot diameter of the position (height) of the focal point of laser beam L2, laser beam L2 in the range of modifying and forming shield tunnel 25
And the conditions such as output of laser beam L2 are adjusted.
When forming the shield tunnel 25 needed for segmentation along whole cutting slot 15b (segmentation preset lines 13), shield tunnel
Road formation process terminates.In addition, here, laser beam L2 is irradiated, but can also be by material to glass substrate 11 from the 1st face 11a sides
Substrate 1, which is kept into, to be made the 2nd face 11b sides upward and irradiates laser beam L2 to glass substrate 11 from the 2nd face 11b sides.In shield
Process is split after tunnel formation process.By device same with the segmentation process of the above embodiment and process come into
Row segmentation process.
In addition, for example, it is also possible to instead of the cutting slot for forming cutting slot 15b formation process formed using laser beam
The laser processing groove formation process of laser processing groove.(A) of Fig. 5 and (B) of Fig. 5 are the intermediary layers for illustrating the 2nd variation
Manufacturing method side elevation in partial section.The manufacturing method of the intermediary layer of 2nd variation includes laser processing groove formation process
(with reference to (A) of Fig. 5), modification layer formation process (with reference to (B) of Fig. 5) and segmentation process.
In laser processing groove formation process, for example, using for irradiating the laser beam irradiation unit 6 of laser beam L3.Laser
Illumination unit 6 has the lens (not shown) of optically focused, makes the laser beam L3 gone out by laser oscillator (not shown) impulse hunting
It irradiates and assembles in defined position.Laser oscillator is configured to impulse hunting and goes out (particularly insulate for laminated body 15
19) layer has the laser beam L3 of absorbent wavelength (being not easy the wavelength absorbed).
In laser processing groove formation process, first, material substrate 1 is kept into the 1st face 11a sides for making glass substrate 11
Upward.For example, the holding of material substrate 1 can be carried out using chuck table (not shown) etc..Then, to material base
The position opposite with laser beam irradiation unit 6 of plate 1 is adjusted, and makes laser beam irradiation unit 6 in arbitrarily segmentation preset lines 13
It is aligned on extended line.
Then, laser beam L is irradiated from laser beam irradiation unit 6 on one side, makes 6 edge of material substrate 1 and laser beam irradiation unit on one side
The direction parallel with the segmentation preset lines 13 as object relatively to move.As a result, as shown in (A) of Fig. 5, along as right
The segmentation preset lines 13 of elephant irradiate laser beam L3 to the exposed surface 15a of the laminated body 15 of the 1st face 11a sides, can be to the 1st face
The laminated body 15 of 11a sides carries out ablation and forms laser processing groove 15c.
In addition, add in the laser that the depth for not reaching glass substrate 11 can be formed in the laminated body 15 of the 1st face 11a sides
The position of focal point, the spot diameter of laser beam L3 and laser beam L3 in the range of work slot 15c to assembling laser beam L3
The conditions such as output be adjusted.Specifically, such as 1 μm~30 μm or so are left (preferably according to along segmentation preset lines 13
Be 2 μm~20 μm or so) thickness laminated body 15 condition irradiation laser beam L3.Thereby, it is possible to prevent caused by heated
The stripping of laminated body 15.
Along the segmentation preset lines 13 as object laser processing groove is being formd in the laminated body 15 of the 1st face 11a sides
After 15c, repeat above-mentioned action and along whole segmentation preset lines 13 in the laminated body 15 of the 1st face 11a sides shape
Into laser processing groove 15c.Later, make spinning upside down for material substrate 1 and according to stacking of the same process in the 2nd face 11b sides
Laser processing groove 15c is formed in body 15.It is formed in the laminated body 15 of the 2nd face 11b sides when along whole segmentation preset lines 13
During laser processing groove 15c, laser processing groove formation process terminates.
In addition, here, after laser processing groove 15c is formd in the laminated body 15 in the 1st face 11a sides, in the 2nd face
Laser processing groove 15c is formed in the laminated body 15 of 11b sides, but laser can also be formd in the laminated body 15 of the 2nd face 11b sides
After processing groove 15c, laser processing groove 15c is formed in the laminated body 15 of the 1st face 11a sides.
After laser processing groove formation process, modification layer formation process is carried out, is formed and made in the inside of glass substrate 11
The modification layer 23 of starting point for segmentation.By the same device of modification layer formation process with the above embodiment and process come into
Row modification layer formation process.Also, after layer formation process is modified, it is split process.By with the above embodiment
The same device of segmentation process and process are split process.
(A) of Fig. 6 and (B) of Fig. 6 are the broken section side views for illustrating the manufacturing method of the intermediary layer of the 3rd variation
Figure.The manufacturing method of the intermediary layer of 3rd variation includes laser processing groove formation process (with reference to (A) of Fig. 6), shield tunnel shape
Into process (with reference to (B) of Fig. 6) and segmentation process.
It is laser machined by the same device of laser processing groove formation process and process with above-mentioned 2nd variation
Slot formation process.After laser processing groove formation process, shield tunnel formation process is carried out, is formed and made in glass substrate 11
The shield tunnel 25 of starting point for segmentation.Pass through the same device of shield tunnel formation process and mistake with above-mentioned 1st variation
Journey carries out shield tunnel formation process.Also, after shield tunnel formation process, it is split process.By with it is above-mentioned
The same device of segmentation process of embodiment and process are split process.
As long as in addition, the construction of the above embodiment, method etc. just can in the range of the purpose of the present invention is not departed from
It suitably changes and implements.
Claims (4)
1. a kind of manufacturing method of intermediary layer produces multiple intermediary layers from material substrate, which has glass substrate
And laminated body, wherein, which is divided into multiple regions by a plurality of segmentation preset lines of clathrate setting, the laminated body
It is layered on the 1st face of the glass substrate or the 2nd face of the side opposite with the 1st face, and the laminated body includes insulating layer
And wiring layer, the manufacturing method of the intermediary layer are characterized in that, include following process：
Cutting slot formation process makes cutting tool cut the exposed surface of the laminated body along the segmentation preset lines, in the laminated body
The middle cutting slot for forming the depth for not reaching the glass substrate；
Layer formation process is modified, by the focal point of the laser beam of wavelength for the glass substrate with permeability along the cutting
Slot is located in the inside of the glass substrate and forms modification layer；And
Segmentation process applies external force to the glass substrate and the glass substrate is split along the modification layer, produces more
A intermediary layer.
2. a kind of manufacturing method of intermediary layer produces multiple intermediary layers from material substrate, which has glass substrate
And laminated body, wherein, which is divided into multiple regions by a plurality of segmentation preset lines of clathrate setting, the laminated body
It is layered on the 1st face of the glass substrate or the 2nd face of the side opposite with the 1st face, and the laminated body includes insulating layer
And wiring layer, the manufacturing method of the intermediary layer are characterized in that, include following process：
Cutting slot formation process makes cutting tool cut the exposed surface of the laminated body along the segmentation preset lines, in the laminated body
The middle cutting slot for forming the depth for not reaching the glass substrate；
Shield tunnel formation process cuts the focal point of the laser beam of the wavelength for the glass substrate with permeability along this
The inside that slot is located in the glass substrate is cut, so as to form the shield tunnel with pore and amorphous regions, wherein, the pore
Extend on the thickness direction of the glass substrate, which surrounds the pore；And
Segmentation process applies external force to the glass substrate and the glass substrate is split along the shield tunnel, produces
Multiple intermediary layers.
3. a kind of manufacturing method of intermediary layer produces multiple intermediary layers from material substrate, which has glass substrate
And laminated body, wherein, which is divided into multiple regions by a plurality of segmentation preset lines of clathrate setting, the laminated body
It is layered on the 1st face of the glass substrate or the 2nd face of the side opposite with the 1st face, and the laminated body includes insulating layer
And wiring layer, the manufacturing method of the intermediary layer are characterized in that, include following process：
Laser processing groove formation process has the laminated body exposed surface irradiation of the laminated body along the segmentation preset lines
The laser beam of the wavelength of absorbability forms the laser processing groove for the depth for not reaching the glass substrate in the laminated body；
Layer formation process is modified, by the focal point of the laser beam of wavelength for the glass substrate with permeability along the laser
Processing groove is located in the inside of the glass substrate and forms modification layer；And
Segmentation process applies external force to the glass substrate and the glass substrate is split along the modification layer, produces more
A intermediary layer.
4. a kind of manufacturing method of intermediary layer produces multiple intermediary layers from material substrate, which has glass substrate
And laminated body, wherein, which is divided into multiple regions by a plurality of segmentation preset lines of clathrate setting, the laminated body
It is layered on the 1st face of the glass substrate or the 2nd face of the side opposite with the 1st face, and the laminated body includes insulating layer
And wiring layer, the manufacturing method of the intermediary layer are characterized in that, include following process：
Laser processing groove formation process has the laminated body exposed surface irradiation of the laminated body along the segmentation preset lines
The laser beam of the wavelength of absorbability forms the laser processing groove for the depth for not reaching the glass substrate in the laminated body；
Shield tunnel formation process swashs the focal point of the laser beam of the wavelength for the glass substrate with permeability along this
Light processing groove is located in the inside of the glass substrate, so as to form the shield tunnel with pore and amorphous regions, wherein, it should
Pore extends on the thickness direction of the glass substrate, which surrounds the pore；And
Segmentation process applies external force to the glass substrate and the glass substrate is split along the shield tunnel, produces
Multiple intermediary layers.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016242236A JP6808282B2 (en) | 2016-12-14 | 2016-12-14 | Interposer manufacturing method |
| JP2016-242236 | 2016-12-14 |
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| CN108231570A true CN108231570A (en) | 2018-06-29 |
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| JP (1) | JP6808282B2 (en) |
| KR (1) | KR20180068862A (en) |
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|---|---|---|---|---|
| CN111192852A (en) * | 2018-11-15 | 2020-05-22 | 株式会社迪思科 | Method for processing laminate |
| CN111199916A (en) * | 2018-11-16 | 2020-05-26 | 株式会社迪思科 | Method for processing laminate |
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| JP2015198212A (en) | 2014-04-03 | 2015-11-09 | 凸版印刷株式会社 | glass interposer |
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- 2017-11-08 TW TW106138540A patent/TWI743244B/en active
- 2017-12-06 KR KR1020170166942A patent/KR20180068862A/en not_active IP Right Cessation
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| JP2011166183A (en) * | 2005-11-10 | 2011-08-25 | Renesas Electronics Corp | Method of manufacturing semiconductor device |
| JP2012114322A (en) * | 2010-11-26 | 2012-06-14 | Shinko Electric Ind Co Ltd | Dicing method of semiconductor wafer |
| CN104148816A (en) * | 2013-05-13 | 2014-11-19 | 株式会社迪思科 | Laser processing method |
| US20150072506A1 (en) * | 2013-09-11 | 2015-03-12 | Disco Corporation | Wafer processing method |
| JP2015207580A (en) * | 2014-04-17 | 2015-11-19 | 凸版印刷株式会社 | Wiring board and manufacturing method of the same |
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| CN111192852A (en) * | 2018-11-15 | 2020-05-22 | 株式会社迪思科 | Method for processing laminate |
| CN111192852B (en) * | 2018-11-15 | 2023-08-01 | 株式会社迪思科 | Method for processing laminated body |
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| CN111199916B (en) * | 2018-11-16 | 2023-08-01 | 株式会社迪思科 | Method for processing laminated body |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6808282B2 (en) | 2021-01-06 |
| TWI743244B (en) | 2021-10-21 |
| JP2018098379A (en) | 2018-06-21 |
| TW201826455A (en) | 2018-07-16 |
| KR20180068862A (en) | 2018-06-22 |
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Application publication date: 20180629 |