CN108198877A - A kind of monocrystalline mixes gallium solar cell and preparation method thereof - Google Patents
A kind of monocrystalline mixes gallium solar cell and preparation method thereof Download PDFInfo
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- CN108198877A CN108198877A CN201810085589.8A CN201810085589A CN108198877A CN 108198877 A CN108198877 A CN 108198877A CN 201810085589 A CN201810085589 A CN 201810085589A CN 108198877 A CN108198877 A CN 108198877A
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- monocrystalline
- gallium
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 74
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 60
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 30
- 239000004411 aluminium Substances 0.000 claims abstract description 29
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 14
- 239000004332 silver Substances 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000001465 metallisation Methods 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 22
- 229910052796 boron Inorganic materials 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 229910000632 Alusil Inorganic materials 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 9
- 239000002002 slurry Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000002161 passivation Methods 0.000 abstract description 10
- 239000004020 conductor Substances 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- 230000036961 partial effect Effects 0.000 abstract description 4
- 230000035515 penetration Effects 0.000 abstract description 4
- 239000012528 membrane Substances 0.000 abstract description 2
- 230000002441 reversible effect Effects 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract description 2
- 125000004429 atom Chemical group 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 238000005554 pickling Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011267 electrode slurry Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of monocrystalline to mix gallium solar cell and preparation method thereof.Including：Doped with the monocrystal silicon substrate of gallium, and the emitter on its light-receiving surface, it is placed in front surface antireflection film/passivating film of emitter surface, it is placed in the front electrode of the conductive material composition of front surface antireflection film/passivation film surface, conductive material metallization be heat-treated in partial penetration front surface antireflection film/passivation membrane material or by the part on front surface antireflection film/passivating film open diaphragm area and emitter formation be in direct contact, and it is placed in the backplate of backside of substrate, wherein backplate is made of two parts, it is arranged on the aluminium electrode of back surface, and the silver electrode as welding photovoltaic component point.The preparation method of this solar cell includes, and surface-texturing is carried out in the silicon base for mix gallium, and prepare emitter in the front of battery, and passivation and antireflective coating are prepared in front and prepares electrode and metallization heat treatment process in the obverse and reverse of battery.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of monocrystalline mixes gallium solar cell and its preparation side
Method.
Background technology
At present, gradually exhausting with fossil energy, for solar cell as new energy substitution scheme, use is more and more wider
It is general.Solar cell is the device that the luminous energy of the sun is converted to electric energy.Solar cell generates carrier using photogenic voltage principle,
Then carrier is drawn using electrode, so as to be conducive to efficiently use electric energy.
The p-type solar cell substrate used at present, generally doped with the silicon chip of boron element.But it uses doped with boron member
As the solar cell of substrate, certain attenuation can occur the monocrystalline silicon of element under solar irradiation for battery efficiency together.This attenuation
Referred to as light decay (LID).The efficiency attenuation 1.5~7% of solar cell made of boron-doping monocrystalline silicon piece in photovoltaic industry at present,
Attenuation degree size depends on the doping concentration, oxygen content, battery structure of boron element.The sheet that the photo attenuation of this battery generates
Understand shape in the case where light injects instead of the oxygen atom of position boron atom and monocrystalline silicon mid gap state in matter reason and doping substrate
Into boron oxygen complex.And boron oxygen complex is deep energy level complex centre, can reduce the service life of minority carrier in this way, so as to reduce
The diffusion length of minority carrier, leads to the efficiency of solar cell to reduce, and influences the long-term reliability of battery.
Invention content
In view of the above problems, the present invention provides a kind of monocrystalline to mix gallium solar cell and preparation method thereof, can solve
Problem is stated, is reduced due to photo attenuation caused by boron oxygen complex.
The present invention technical solution be：
A kind of monocrystalline mixes gallium solar cell, is included successively by front to the back side：Front electrode, front surface antireflection film/passivation
Film, emitter, monocrystalline mix algan single crystal and mix gallium silicon base and backplate；The backplate includes aluminium electrode and back silver electricity
Pole.
The doping concentration that the monocrystalline mixes gallium element in gallium silicon base is 1 × 1013~1 × 1017A atom/cube li
Rice.
The monocrystalline mixes gallium silicon base also doped with boron element, and the doping concentration of boron element is 1 × 1013~1 × 1017
A atom/cubic centimetre.
The front electrode is by partial penetration front surface antireflection film/passivating film or by front surface antireflection film/blunt
It opens diaphragm area and is in direct contact with emitter formation in part on change film.
The Al-BSF electrode is arranged on the back side that monocrystalline mixes gallium silicon base, and back side silver electrode is arranged on Al-BSF electrode
On；Aluminium electrode and back side silver electrode mix gallium silicon base rear-face contact with monocrystalline.
The aluminium electrode and monocrystalline includes the hole doping layer that one layer of doping component is aluminium, hole between mixing gallium silicon base
The thickness of doped layer is 1~15um.
Also doped with boron in the hole doping layer, boron element doping concentration is 5 × 1016~1 × 1021A atom/vertical
Square centimetre.
Further include one layer of alusil alloy layer between the hole doping layer and aluminium electrode, alusil alloy layer thickness for 1~
5um。
Front surface antireflection film/the passivating film is silica, silicon nitride, silicon oxynitride, aluminium oxide and carborundum films
In one or more laminations form；The refractive index of front surface antireflection film/passivating film is 1.5~2.5,50~100nm of thickness.
A kind of monocrystalline mixes the preparation method of gallium solar cell, includes the following steps：
1) it mixes monocrystalline gallium silicon base and carries out surface-texturing and cleaning；
2) gallium silicon base front is mixed in monocrystalline to carry out preparing emitter；
3) it mixes monocrystalline gallium silicon base and carries out edge insulation processing；
4) emitter for mixing monocrystalline gallium silicon base carries out front surface antireflection film/passivation film preparation；
5) monocrystalline is mixed gallium silicon base front, the back side carry out electrocondution slurry be graphically coated with；
6) it carries out metallization heat treatment process and prepares front electrode and backplate respectively.
Relative to the prior art, the present invention has following technique effect：
The present invention includes the monocrystal silicon substrate doped with gallium and the emitter on its light-receiving surface, is placed in emitter table
Front surface antireflection film/the passivating film in face is placed in the front electrode of the conductive material composition of front surface antireflection film/passivation film surface,
Conductive material high temperature sintering partial penetration front surface antireflection film/passivation membrane material or by front surface antireflection film/passivating film
Part open diaphragm area and semiconductor formation is in direct contact and is placed in the backplate of backside of substrate, gallium silicon is mixed using monocrystalline
It as the base material of solar cell, is prepared for monocrystalline and mixes gallium solar cell, the replacement position adulterated in substrate can be reduced by mixing gallium
The oxygen atom of boron atom and monocrystalline silicon mid gap state can form boron oxygen complex in the case where light injects, and can increase minority in this way
The service life of carrier so as to increase the diffusion length of minority carrier, leads to the efficiency of solar cell to increase, and ensure battery
Long-term reliability.The battery structure can reduce or inhibit the light decay of single crystal silicon solar cell substantially, can be by the monocrystalline silicon sun
The light decay of battery is controlled within 1%.
Further, there can also be a certain amount of boron element in silicon base, can also there is certain suppression to light decay in the case
Effect processed, but inhibition can be slightly worse than the silicon chip for only mixing gallium.
One layer of doping component that the aluminium electrode and monocrystalline being further formed mix between gallium silicon base is the silicon substrate of aluminium
Hole doping layer.The silicon substrate hole doping layer and silicon base of this layer of aluminium form the potential difference of p+/p, so as to improve entire battery
Open-circuit voltage, the recombination rate near the electrode is also reduced, so as to improve transfer efficiency.
Boron can be also further doped in the hole doping layer, boron element doping concentration is 5 × 1016~1 × 1021
A atom/cubic centimetre.The doping concentration of boron is generally greater than aluminium doping hole concentration, and therefore, the potential difference of p+/p increases, further
Improve open-circuit voltage.
It may also include one layer of alusil alloy layer between the hole doping layer and aluminium electrode, alusil alloy layer thickness is 1
~5um.The presence of this alusil alloy layer can cause the conductive electrode of aluminum and the semiconductor base of p-type to be formed and preferably connect
Touch performance.
The preparation method that monocrystalline of the present invention mixes gallium solar cell includes：Surface-texturing is carried out in the silicon base for mix gallium,
And emitter is prepared in the front of battery, passivation and antireflective coating are prepared in front and is prepared in the obverse and reverse of battery
Electrode and metallization heat treatment process, integrated artistic is simple, is suitble to industrialized production.
Description of the drawings
Fig. 1 is the battery schematic diagram of an example in the embodiment of the solar cell of the present invention.
Fig. 2 is the front electrode schematic diagram of an example in the embodiment of the solar cell of the present invention.
Fig. 3 is the backplate schematic diagram of an example in the embodiment of the solar cell of the present invention.
Wherein mark：1 mixes gallium silicon base for monocrystalline, and 2 be emitter, and 3 be front surface antireflection film/passivating film, and 4 be aluminium electricity
Pole, 5 be back side silver electrode, and 6 be the thin grid line in front, and 7 be positive connection electrode.
Specific embodiment
The present invention will be described for citing specific embodiment below.It should be pointed out that following embodiment is served only for this
Invention is described further, and does not represent protection scope of the present invention, other people promptings according to the present invention are made nonessential
Modification and adjustment, still fall within protection scope of the present invention.
As shown in Figure 1, a kind of monocrystalline of the present invention mixes gallium solar cell, including：Monocrystal silicon substrate 1 doped with gallium and
Emitter 2 on it and aluminium electrode are placed in the front surface antireflection film/passivating film 3 on 2 surface of emitter, are placed in positive antireflective
The front electrode being made of conductive material on 3 surface of film/passivating film is placed in the backplate that monocrystalline mixes 1 back side of gallium silicon base；Just
Face conductive material is by high temperature sintering partial penetration front surface antireflection film/3 material of passivating film or by front surface antireflection film/blunt
Diaphragm area is opened in part on change film 3 and the formation of emitter 2 is in direct contact, and forms front electrode；Backplate two parts group
Into the back side silver electrode 5 including being coated on the aluminium electrode 4 of back surface and as welding photovoltaic component point.Two parts electrode is equal
1 back side of gallium silicon base is mixed with the monocrystalline of battery to be in direct contact.It is adulterated doped with gallium element in the monocrystal silicon substrate 1 of gallium a concentration of
1×1013~1 × 1017A atom/cubic centimetre.
Preferably, monocrystalline mix gallium silicon base 1 can also be doped with boron, wherein a concentration of the 1 × 10 of boron element doping13~1
×1017A atom/cubic centimetre.
Front surface antireflection film/passivating film of semiconductor surface is made of the superposition of one or more layers film；Positive antireflective
Film/passivating film is made of or a kind of in silica, silicon nitride, silicon oxynitride, aluminium oxide, silicon carbide by a variety of groups therein
Into；The overall refractive index 1.5~2.5 of front surface antireflection film/passivating film, the overall thickness 50 of front surface antireflection film/passivating film~
100nm。
Emitter 2 is in the light-receiving surface of battery.The front electrode of solar cell, preferably silver electrode.
As shown in Fig. 2, front electrode includes connecting for guiding the thin grid line 6 in the front of electric current and for the front of collected current
Receiving electrode 7, the thin grid line 6 in front are arranged vertically with positive connection electrode 7.
As shown in figure 3, the back side silver electrode 5 in backplate is distributed in the region at the back side in local bulk and monocrystalline is mixed
The formation of gallium silicon base 1 is in direct contact, remaining backside surface that monocrystalline mixes gallium silicon base 1 removes marginal portion and silver electrode peripheral part
Other than region, residual surface is covered by aluminium electrode 4；Aluminium electrode 4 and monocrystalline mix gallium silicon base 1 and form rear-face contact.
The rear-face contact of aluminium electrode consists of the following parts：Main conductive ingredient is aluminium electrode 4, and monocrystalline mixes gallium silicon base 1,
And it is placed in aluminium electrode 4 and silicon substrate hole doping layer that one layer of main doping component that monocrystalline is mixed between gallium silicon base 1 is aluminium, it should
Hole doping layer can be further doped with boron element；The hole doping layer hole boron doping concentration is 5 × 1016~1 × 1021
A atom/cubic centimetre；The thickness of the hole doping layer is 1~15um.
Between hole doping layer and aluminium electrode 4, one layer of alusil alloy layer is further included, thickness is 1~5um.
Preferably, the rear-face contact of aluminium electrode also may not include hole doping layer or alusil alloy layer.
The present invention also provides the preparation methods that a kind of monocrystalline mixes gallium solar cell, include the following steps：
1) it mixes monocrystalline algan single crystal and mixes the progress surface-texturing of gallium silicon base 1 and cleaning；
2) emitter 2 is carried out to prepare；
3) edge insulation processing is carried out；
4) passivated reflection reducing of progress light-receiving surface is penetrated film 3 and is prepared；
5) the electrode slurry bed of material comprising conductive compositions is graphically formed in positive and negative；
6) metallization heat treatment process is carried out；The peak temperature for the heat treatment process that metallizes is 500~1000 DEG C.Electrode slurry
Include a step or several printing process and one or several drying courses in the graphical distributed process of the bed of material, wherein several
The electrocondution slurry of step can be identical, can not also be identical.
Embodiment 1：
The first step mixes monocrystalline gallium silicon chip and carries out surface-texturing；This mixes gallium silicon chip opposite side distance for 156.75mm, a diameter of
220mm, not boracic in silicon chip, a concentration of 2 × 10 containing gallium16A atom/cubic centimetre.It is clear in slot type that gallium silicon chip is mixed to this monocrystalline
The texturing on surface is completed in washing machine using 2~3wt%NaOH solution, pyramid structure is formed on surface.Wherein solution temperature
80 DEG C, duration 10min.And pass through HF pickling, washing, drying and etc., remove surface metal ion.
Second step carries out emitter preparation.The preparation of pn-junction is completed in tubular type heating diffusion furnace tube, uses N2Carry POCl3
Source.Spread 850 DEG C of peak temperature, 110 minutes diffusion times.
Third walks, and carries out insulation processing.Insulation processing is completed in Chained cleaning machine, the mixing using HF acid and nitric acid is molten
Liquid, the removal back side can cause the N-shaped doped region of electric leakage around the N-shaped doped region formed and edge is expanded.In addition in this processing step
In also include HF pickling and remove positive phosphorosilicate glass.
4th step carries out the preparation of front surface antireflection film/passivating film.It is carried out using the enhanced plasma gas-phase deposit of tubular type
The deposition of silicon nitride, double-layer silicon nitride is as passivation and antireflective coating.Wherein underlying silicon nitride thickness 20nm, refractive index 2.20,
Upper silicon nitride thickness 40nm, refractive index 1.95.
5th step coats conductive material as required in the front and back of battery.We use silk screen in the present embodiment
Mode of printing carries out electrocondution slurry and is graphically coated with.Front uses the silver paste for penetrating silicon nitride as thin grid line slurry, thin grid line
Radical 100, connection electrode is using the non-electrocondution slurry for burning type silicon nitride, connection electrode radical 4, connection electrode 7 and thin
6 direction of grid line is orthogonal and is connected in intersection.The back side is printed with aluminium paste as aluminium electrode using screen printing mode.
6th step carries out metallization heat treatment process.In the process, using chain-type sintering furnace, it is sintered peak temperature 850
DEG C, this temperature is to survey the temperature of silicon chip surface, prepares front electrode and backplate respectively.
Embodiment 2
The first step mixes monocrystalline gallium silicon chip and carries out surface-texturing；This mixes gallium silicon chip opposite side distance for 156.75mm, a diameter of
210mm, a concentration of the 4 × 10 of boron in silicon chip16A atom/cubic centimetre, a concentration of 3 × 10 containing gallium15A atom/cube li
Rice.The texturing that gallium silicon chip completes surface in groove-type cleaning machine using 2~3wt%NaOH solution is mixed this monocrystalline, on surface
Form pyramid structure.Wherein 80 DEG C of solution temperature, duration 10min.And pass through HF pickling, washing, drying and etc., it goes
Except surface metal ion.
Second step carries out emitter preparation.The preparation of pn-junction is completed in tubular type heating diffusion furnace tube, uses N2Carry POCl3
Source.Spread 840 DEG C of peak temperature, 90 minutes diffusion times.
Third walks, and carries out insulation processing.Insulation processing is completed in Chained cleaning machine, the mixing using HF acid and nitric acid is molten
Liquid, the removal back side can cause the N-shaped doped region of electric leakage around the N-shaped doped region formed and edge is expanded.In addition in this processing step
In also include HF pickling and remove positive phosphorosilicate glass.
4th step carries out the preparation of front surface antireflection film/passivating film.It is carried out using the enhanced plasma gas-phase deposit of tubular type
The deposition of silicon nitride, double-layer silicon nitride is as passivation and antireflective coating.Wherein underlying silicon nitride thickness 20nm, refractive index 2.20,
Upper silicon nitride thickness 40nm, refractive index 1.95.
5th step coats conductive material as required in the front and back of battery.We use silk screen in the present embodiment
Mode of printing carries out electrocondution slurry and is graphically coated with.Front uses the silver paste for penetrating silicon nitride as thin grid line slurry, thin grid line
Radical 100, connection electrode is using the non-electrocondution slurry for burning type silicon nitride, connection electrode radical 4, connection electrode 7 and thin
6 direction of grid line is orthogonal and is connected in intersection.The back side is printed with aluminium paste using screen printing mode.
6th step carries out metallization heat treatment process.In the process, using chain-type sintering furnace, it is sintered peak temperature 850
DEG C, this temperature is to survey the temperature of silicon chip surface, prepares front electrode and backplate respectively.
The light decay result such as following table of the actual test for the battery that above-mentioned two embodiment is prepared：
Light decay tests test condition：Light intensity 1suns, 65 DEG C of environment temperature, the time is for 24 hours.
Table 1
Data show that the light decay of battery is controlled less than 3% in table 1.The preferable light decay for inhibiting battery.
Protection scope of the present invention is not limited to the above embodiments, for those of ordinary skill in the art, if
If the various changes and deformations that carried out to the present invention belong in the range of the claims in the present invention and equivalent technologies, the meaning of the present invention
Including figure is also changed and is deformed comprising these.
Claims (10)
1. a kind of monocrystalline mixes gallium solar cell, which is characterized in that is included successively by front to the back side：Front electrode, positive anti-reflection
It penetrates film/passivating film (3), emitter (2), monocrystalline and mixes algan single crystal and mix gallium silicon base (1) and backplate；The backplate packet
Include aluminium electrode (4) and back side silver electrode (5).
2. a kind of monocrystalline according to claim 1 mixes gallium solar cell, which is characterized in that the monocrystalline mixes gallium silicon base
(1) doping concentration of gallium element is 1 × 10 in13~1 × 1017A atom/cubic centimetre.
3. a kind of monocrystalline according to claim 2 mixes gallium solar cell, which is characterized in that the monocrystalline mixes gallium silicon base
(1) also doped with boron element, the doping concentration of boron element is 1 × 1013~1 × 1017A atom/cubic centimetre.
4. a kind of monocrystalline according to claim 1 mixes gallium solar cell, which is characterized in that the front electrode passes through office
Portion penetrate front surface antireflection film/passivating film (3) or by the part on front surface antireflection film/passivating film (3) open diaphragm area with
Emitter (2) formation is in direct contact.
5. a kind of monocrystalline according to claim 1 mixes gallium solar cell, which is characterized in that the Al-BSF electrode (4)
The back side that monocrystalline mixes gallium silicon base (1) is arranged on, back side silver electrode (5) is arranged on Al-BSF electrode (4)；Aluminium electrode (4) and
Back side silver electrode (5) mixes gallium silicon base (1) rear-face contact with monocrystalline.
6. a kind of monocrystalline according to claim 5 mixes gallium solar cell, which is characterized in that the aluminium electrode (4) and list
Crystalline substance is mixed between gallium silicon base (1) comprising the hole doping layer that one layer of doping component is aluminium, the thickness of hole doping layer for 1~
15um。
7. a kind of monocrystalline according to claim 6 mixes gallium solar cell, which is characterized in that in the hole doping layer also
Doped with boron, boron element doping concentration is 5 × 1016~1 × 1021A atom/cubic centimetre.
8. a kind of monocrystalline according to claim 6 mixes gallium solar cell, which is characterized in that the hole doping layer and aluminium
One layer of alusil alloy layer is further included between electrode (4), alusil alloy layer thickness is 1~5um.
9. a kind of monocrystalline according to claim 1 mixes gallium solar cell, which is characterized in that the front surface antireflection film/
Passivating film (3) is that one or more laminations in silica, silicon nitride, silicon oxynitride, aluminium oxide and carborundum films are formed；Just
The refractive index of face antireflective coating/passivating film (3) is 1.5~2.5,50~100nm of thickness.
10. the monocrystalline described in a kind of claim 1 to 9 any one mixes the preparation method of gallium solar cell, which is characterized in that packet
Include following steps：
1) it mixes monocrystalline gallium silicon base (1) and carries out surface-texturing and cleaning；
2) gallium silicon base (1) front is mixed in monocrystalline to carry out preparing emitter (2)；
3) it mixes monocrystalline gallium silicon base (1) and carries out edge insulation processing；
4) emitter (2) for mixing monocrystalline gallium silicon base (1) carries out front surface antireflection film/passivating film (3) preparation；
5) monocrystalline is mixed gallium silicon base (1) front, the back side carry out electrocondution slurry be graphically coated with；
6) it carries out metallization heat treatment process and prepares front electrode and backplate respectively.
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Application publication date: 20180622 |