CN108181415A - Micro- thermal conductivity detector (TCD) of film-type and preparation method thereof - Google Patents
Micro- thermal conductivity detector (TCD) of film-type and preparation method thereof Download PDFInfo
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- CN108181415A CN108181415A CN201611124545.9A CN201611124545A CN108181415A CN 108181415 A CN108181415 A CN 108181415A CN 201611124545 A CN201611124545 A CN 201611124545A CN 108181415 A CN108181415 A CN 108181415A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/62—Detectors specially adapted therefor
- G01N30/64—Electrical detectors
- G01N30/66—Thermal conductivity detectors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of micro- thermal conductivity detector (TCD) of film-type and preparation method thereof, and the micro- thermal conductivity detector (TCD) of the film-type has sandwich structure, is glass substrate, the silicon chip with very low power and the glass with micro- raceway groove successively from below to up；For cross network structure fabrication in silicon chip surface and among being suspended in microchannel, structure is the thermistor protected by two layers of silica/silicon nitride film；Critical process includes passing through deep reaction ion etching（DRIE）Technique etching silicon wafer back side silicon release cross network structure, the making of detector chip is led by the completion of electrostatic bonding twice low-grade fever.Two layers of silica/silicon nitride film up and down of the thermistor of the present invention not only plays a protective role to it; and symmetrical due to structure can also play the role of stress equilibrium; the deformation of cross network structure is reduced, substantially increases the intensity and stability of thermistor support construction；Cross network structure is discharged using a step DRIE techniques so that very low power sidewall, device dead volume are small.
Description
Technical field
The invention belongs to microelectromechanical systems field, more particularly to a kind of micro- thermal conductivity detector (TCD) of film-type and its making
Method.
Background technology
Thermal conductivity detector (TCD) is a kind of important detector of gas chromatograph, and this detector is only to the dense of detected gas
Degree is sensitive, and almost all gas is all responded.Traditional gas chromatography thermal conductivity detector is generally added using stainless steel or ceramics
Work forms, and volume is big, weight weight, and power consumption is big, more importantly since processing technology restricts, and traditional thermal conductivity detector (TCD) generally all has
There is a larger dead volume, about tens to several hectolambdas, which has limited the reductions of thermal conductivity detector (TCD) Monitoring lower-cut.
With the development of MEMS (Micro-electro-mechanical system) technology, designed using MEMS technology,
The low-grade fever of making, which leads detector chip, has many advantages, such as small, light-weight, small power consumption, and what is more important is based on MEMS technology
The dead volume of the thermal conductivity detector (TCD) of making is greatly lowered and (is generally less than 1 microlitre, be nanoliter magnitude), and Monitoring lower-cut is up to several
Ppm is even less than 1ppm.
In existing low-grade fever leads detector technologies scheme, thermistor be made on supporting layer and be suspended in micro- raceway groove it
In, but there are Railway Projects：
1st, the supporting layer of thermistor is generally silicon nitride monofilm or silicon nitride/Si oxide compound film structure, due to answering
The problems such as power is excessive or mismatch problems, and the structure after release can occur fracture, moderate finite deformation, collapse, this support construction are stablized
Property is poor, easily by airflow influence.
2nd, based on potassium hydroxide (KOH) anisotropic etch or two step deep reaction ion etching techniques, (DRIE, the first step are
Anisotropic etching, second step are isotropic etching) discharge support construction and shape from positive (thermistor side) corrosion silicon
Into corresponding micro- raceway groove, excessive extra dead volume can be brought.
In order to obtain high performance micro- thermal conductivity detector (TCD), the above problem is the research of this field for being engaged in micro- thermal conductivity detector (TCD)
The technical issues of personnel need to put forth effort to solve.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of micro- thermal conductivity detector (TCD)s of film-type
And preparation method thereof, the supporting layer for solving thermistor in the prior art, which is easily broken off, and extra dead volume is excessive etc. asks
Topic.
In order to achieve the above objects and other related objects, the present invention provides a kind of micro- thermal conductivity detector (TCD) of film-type, including：Silicon
Substrate is formed with very low power structure in the silicon substrate；It is formed by first medium film-thermistor-second medium film
Graphical stacked structure is hung in the positive very low power structure of the silicon substrate；Sheet glass with micro- raceway groove, is bonded to
The silicon substrate front, and the graphical stacked structure is located in micro- raceway groove of the sheet glass；Glass substrate, bonding
In the back side of the silicon substrate.
A kind of preferred embodiment of the micro- thermal conductivity detector (TCD) of film-type as the present invention, the very low power structure run through the silicon
Substrate face and the back side.
As a kind of preferred embodiment of the micro- thermal conductivity detector (TCD) of film-type of the invention, pad is also formed in the silicon substrate
Groove is formed with pad structure in the pad recess, and the pad structure is electrical connected with the thermistor.
A kind of preferred embodiment of the micro- thermal conductivity detector (TCD) of film-type as the present invention, metal used by the thermistor
Including one kind in Pt/Ti laminations, Ni/Cr laminations, W/Ti laminations and W/Re laminations.
A kind of preferred embodiment of the micro- thermal conductivity detector (TCD) of film-type as the present invention, the first medium film and second Jie
The planar structure of matter film be cross network structure, and in the cross network structure have multiple extensions, each extension with
The silicon substrate connection, to support the cross network structure.
A kind of preferred embodiment of the micro- thermal conductivity detector (TCD) of film-type as the present invention, the thermistor are serrated along institute
The extension of cross network structure is stated, and is connected between the pad structure.
A kind of preferred embodiment of the micro- thermal conductivity detector (TCD) of film-type as the present invention, the first medium film and second Jie
Matter film includes the laminated construction of one or two kinds of compositions of silicon oxide film and silicon nitride film.
Preferably, the first medium film and second medium film form folded for silicon oxide film and silicon nitride film
Layer structure, the first medium film are from bottom to top silicon oxide film and silicon nitride film laminated construction, the second medium
Film is from bottom to top silicon nitride film and silicon oxide film laminated construction.
A kind of preferred embodiment of the micro- thermal conductivity detector (TCD) of film-type as the present invention, the first medium film and second Jie
Matter film is wraps up the thermistor or the clamping thermistor.
A kind of preferred embodiment of the micro- thermal conductivity detector (TCD) of film-type as the present invention, the graphical stacked structure are hung on
The middle section of the positive very low power structure of the silicon substrate, and the middle section in micro- raceway groove of the sheet glass.
A kind of preferred embodiment of the micro- thermal conductivity detector (TCD) of film-type as the present invention, it is the sheet glass and silicon substrate, described
Glass substrate and silicon substrate are electrostatic bonding.
The present invention also provides a kind of preparation method of the micro- thermal conductivity detector (TCD) of film-type, the preparation method includes step：Step
It is rapid 1) to provide a silicon substrate, deposit first medium film in the surface of silicon；Step 2), in the first medium film
Upper deposited metal simultaneously graphically forms thermistor；Step 3), in depositing on the thermistor and first medium layer film
Second medium film, formation first medium film-thermistor-the Film patterning to the first medium film and second medium
The graphical stacked structure of second medium film；Step 4) provides a sheet glass for carrying micro- raceway groove, is bonded the sheet glass and institute
Silicon substrate is stated, and the graphical stacked structure is located in micro- raceway groove of the sheet glass；Step 5), from back-etching institute
Silicon substrate is stated, releases the graphical stacked structure of the first medium film-thermistor-second medium film；Step 6),
One glass substrate is provided, and the glass substrate is bonded to the back side of the silicon substrate.
A kind of preferred embodiment of the preparation method of the micro- thermal conductivity detector (TCD) of film-type as the present invention, step 1) is in deposition the
Further included before one dielectric film on the silicon substrate formed pad area groove the step of；After step 2) deposited metal, graphically
Pad structure is formed in the pad recess simultaneously, the pad structure is electrical connected with the thermistor；In step 3),
It is Film patterning to the first medium film and second medium while expose the bonding region of the pad structure and silicon substrate
Domain.
A kind of preferred embodiment of the preparation method of the micro- thermal conductivity detector (TCD) of film-type as the present invention, it is described in step 2)
Metal includes one kind in Pt/Ti laminations, Ni/Cr laminations, W/Ti laminations and W/Re laminations.
A kind of preferred embodiment of the preparation method of the micro- thermal conductivity detector (TCD) of film-type as the present invention, step 3) are graphical
Afterwards, the planar structure of the first medium film and second medium film is cross network structure, and the cross network structure
In have multiple extensions, each extension is in the graphical stacking of the first medium film-thermistor-second medium film
It after structure release, is connect with the silicon substrate, to support the cross network structure.
A kind of preferred embodiment of the preparation method of the micro- thermal conductivity detector (TCD) of film-type as the present invention, the thermistor are in
Zigzag extends along the cross network structure, and is connected between the pad structure.
A kind of preferred embodiment of the preparation method of the micro- thermal conductivity detector (TCD) of film-type as the present invention, the first medium are thin
Film and second medium film include the laminated construction of one or two kinds of compositions of silicon oxide film and silicon nitride film.
Preferably, the first medium film and second medium film form folded for silicon oxide film and silicon nitride film
Layer structure, the first medium film are from bottom to top silicon oxide film and silicon nitride film laminated construction, the second medium
Film is from bottom to top silicon nitride film and silicon oxide film laminated construction.
A kind of preferred embodiment of the preparation method of the micro- thermal conductivity detector (TCD) of film-type as the present invention, the first medium are thin
Film and second medium film is wrap up the thermistor or the clamping thermistor.
A kind of preferred embodiment of the preparation method of the micro- thermal conductivity detector (TCD) of film-type as the present invention, the graphical stacking
Structure hangs on the middle section of the positive very low power structure of the silicon substrate, and in step 4), the sheet glass and described
After silicon substrate bonding, the graphical stacked structure is located at the middle section in micro- raceway groove of the sheet glass.
A kind of preferred embodiment of the preparation method of the micro- thermal conductivity detector (TCD) of film-type as the present invention in step 5), uses
Deep reaction ion etching technique releases the first medium film-thermistor-the second and is situated between from silicon substrate described in back-etching
The graphical stacked structure of matter film.
A kind of preferred embodiment of the preparation method of the micro- thermal conductivity detector (TCD) of film-type as the present invention, the glass in step 4)
Piece is bonded with the glass substrate in silicon substrate, step 6) with silicon substrate using static bonding process.
As described above, micro- thermal conductivity detector (TCD) of film-type of the present invention and preparation method thereof, has the advantages that：
1) two layers of silica/silicon nitride film up and down of thermistor of the invention not only plays a protective role to it, separately
On the one hand due to the symmetrical deformation that can also play the role of stress equilibrium, reduce cross network structure of structure, thus
Substantially increase the intensity and stability of thermistor support construction；
2) present invention discharges cross network structure using a step deep reaction ion etching DRIE techniques so that very low power side wall
Steep, device dead volume is small.
Description of the drawings
Fig. 1 is shown as the schematic diagram of the cross network structure in the micro- thermal conductivity detector (TCD) of film-type of the present invention.
Fig. 2 is shown as micro- thermal conductivity detector (TCD) of the tool there are four thermistor.
Fig. 3 is shown as the Wheatstone bridge that four thermistors are formed.
Fig. 4~Figure 12 is shown as the structure that each step of production method of the micro- thermal conductivity detector (TCD) of film-type of the present invention is presented
Schematic diagram, wherein, Figure 12 is shown as the micro- thermal conductivity detector (TCD) structure diagram of film-type.
Component label instructions
1 silicon substrate
11 very low power structures
12 cross network structures
2 oxide layers
3 pad recess
41 first medium films
42 second medium films
51 thermistors
52 pad structures
6 have the sheet glass of micro- raceway groove
7 glass substrates
81st, 83 microchannel
The interface channel of 82 installation capillaries
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig.1~Figure 12.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with related component in the present invention rather than according to actual implementation in illustrating then
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during actual implementation, and its
Assembly layout kenel may also be increasingly complex.
As shown in FIG. 11 and 12, the micro- thermal conductivity detector (TCD) of film-type of the invention have sandwich structure, from below to up according to
Secondary is glass substrate 7, the silicon substrate 1 with very low power and the sheet glass with micro- raceway groove 6.Cross network structure 12 is made in silicon substrate
1 surface and the middle section (distance of cross network structure to very low power two side walls is equal) for being suspended in very low power, such as Figure 11
And shown in 12, structure is the thermistor 51 protected by two layers of silica/silicon nitride film, is respectively from top to down：Oxygen
SiClx/silicon nitride, thermistor 51, nitridation silicon/oxidative silicon, it is notable that in order to more clearly draw thermistor 51
Structure does not draw the silica/silicon nitride on upper strata in Fig. 1.In addition, it is necessary to explanation is：The friendship of other structures can be used
Pitch 51 structure of reticular structure 12 and thermistor, it is not limited to structure shown in FIG. 1.This new structure design solves well
It has determined two problems of the prior art：First, two layers of silica/silicon nitride film up and down of thermistor 51 not only plays it
To protective effect, on the other hand since the symmetrical of structure can also play the role of stress equilibrium, cross network knot is reduced
The deformation of structure 12；Second, using step DRIE techniques release cross network structure 12, very low power sidewall, device dead volume
It is small.
A thermistor 51 is only depicted in Figure 11 and Figure 12, it is however generally that, a micro- thermal conductivity detector (TCD) includes four
A thermistor 51R1, R2, R3, R4, as shown in Fig. 2, wherein R1, R4 are located in a microchannel 81, and in addition R2, R3 are located at
In one microchannel 83, there are one the interface channels 82 of installation capillary respectively at the both ends of each microchannel.R1、R2、R3、R4
A Wheatstone bridge is formed according to as shown in Figure 3 being linked in sequence.
As shown in FIG. 11 and 12, the present embodiment provides a kind of micro- thermal conductivity detector (TCD) of film-type, including：Silicon substrate 1, it is described
Very low power structure 11 is formed in silicon substrate 1；It is formed by first medium film 41- thermistor 51- second mediums film 42
Graphical stacked structure is hung in the positive very low power structure 11 of the silicon substrate 1；Sheet glass 6 with micro- raceway groove, key
Together in 1 front of silicon substrate, and the graphical stacked structure is located in micro- raceway groove of the sheet glass 6；Glass lined
Bottom 7 is bonded to the back side of the silicon substrate 1.
As an example, the very low power structure 11 is through 1 front of silicon substrate and the back side.
As an example, being also formed with pad recess 3 in the silicon substrate 1, pad structure is formed in the pad recess
52, the pad structure 52 is electrical connected with the thermistor 51.Metal includes Pt/Ti used by the thermistor 51
One kind in lamination, Ni/Cr laminations, W/Ti laminations and W/Re laminations.
As an example, the planar structure of the first medium film 41 and second medium film 42 is cross network structure
12, and there are multiple extensions in the cross network structure 12, each extension is connect with the silicon substrate 1, with described in support
Cross network structure 12.The thermistor 51 is serrated to be extended, and be connected to the weldering along the cross network structure 12
Between dish structure 52.
As an example, the first medium film 41 and second medium film 42 include silicon oxide film and silicon nitride film
One or two kinds of compositions laminated construction.The first medium film 41 and second medium film 42 is wrap up the temperature-sensitive electricity
Resistance 51 or the clamping thermistor 51.
As an example, the graphical stacked structure is located at the middle section in micro- raceway groove of the sheet glass 6.
As an example, the sheet glass 6 is electrostatic bonding with silicon substrate 1, the glass substrate 7 and silicon substrate 1.
As shown in Fig. 4~Figure 12, the present embodiment also provides a kind of preparation method of the micro- thermal conductivity detector (TCD) of film-type, the system
Preparation Method includes step：
As shown in Fig. 4~Fig. 6, step 1) is carried out first, a silicon substrate 1 is provided, in forming pad area on the silicon substrate 1
Groove as shown in Fig. 4~Fig. 5, then deposits first medium film 41, as shown in Figure 6 in 1 surface of silicon substrate.
As shown in fig. 6, then carrying out step 2), heat is formed in deposited metal on the first medium film 41 and graphically
Quick resistance 51.
As an example, the metal includes one kind in Pt/Ti laminations, Ni/Cr laminations, W/Ti laminations and W/Re laminations.
In addition, in the present embodiment, it is graphical to form weldering in the pad recess 3 simultaneously after step 2) deposited metal
Dish structure 52, the pad structure 52 are electrical connected with the thermistor 51.
As shown in Fig. 7~Fig. 8, step 3) is then carried out, is deposited on the thermistor 51 and first medium layer film
Second medium film 42 graphically forms first medium film 41- to the first medium film 41 and second medium film 42
The graphical stacked structure of thermistor 51- second mediums film 42.
As an example, after step 3) is graphical, the planar structure of the first medium film 41 and second medium film 42
For cross network structure 12, and there are multiple extensions in the cross network structure 12, as shown in Figure 1, each extension is in institute
After the graphical stacked structure release for stating first medium film 41- thermistor 51- second mediums film 42, with the silicon substrate
1 connection, to support the cross network structure 12.
Extend as an example, the thermistor 51 is serrated along the cross network structure 12, and be connected to described
Between pad structure 52, as shown in Figure 1.
As an example, the first medium film 41 and second medium film 42 is wrap up the thermistor 51 or clamping
The thermistor 51.
As an example, the first medium film 41 and second medium film 42 include silicon oxide film and silicon nitride film
One or two kinds of compositions laminated construction.In the present embodiment, the first medium film 41 is thin for silica from bottom to top
Film and silicon nitride film laminated construction, the second medium film 42 is silicon nitride film and silicon oxide film lamination from bottom to top
Structure, i.e., what is contacted with the thermistor 51 is silicon nitride film, and silicon oxide film is then located at the silicon nitride film
Except, the silicon oxide film is set to except silicon nitride film, can more effectively protect the thermistor 51, is increased
The antioxygenic property of thermistor 51 and anti-etching/corrosivity of laminated construction.
Two layers of silica/silicon nitride film up and down of the thermistor 51 of the present invention not only plays a protective role to it, separately
On the one hand due to the symmetrical deformation that can also play the role of stress equilibrium, reduce cross network structure 12 of structure, from
And substantially increase the intensity and stability of 51 support construction of thermistor.
As an example, in step 3), the first medium film 41 and second medium film 42 are graphically exposed simultaneously
The bond area of the pad structure 52 and silicon substrate 1.
As shown in figure 9, then carry out step 4), provide one carry micro- raceway groove sheet glass 6, be bonded the sheet glass 6 and
The silicon substrate 1, and cause the graphical stacked structure be located in micro- raceway groove of the sheet glass 6, the sheet glass 6 it is micro-
Very low power on raceway groove and the silicon substrate 1 collectively constitutes the microchannel 81,83 of the micro- thermal conductivity detector (TCD) of film-type.
As an example, after the sheet glass 6 and the silicon substrate 1 are bonded, the graphical stacked structure is located at the glass
Middle section in micro- raceway groove of glass piece 6.
As an example, the sheet glass 6 in step 4) is bonded with silicon substrate 1 using static bonding process.
It should be noted that the specific size of micro- raceway groove and the very low power on silicon substrate can be with coming according to actual needs on glass
It determines.The size of micro- raceway groove can be determined by the control corrosion rate time on glass；The depth of very low power on silicon substrate is by silicon chip
Thickness determines.
As shown in Figure 10, step 5) is then carried out, from silicon substrate 1 described in back-etching, it is thin to release the first medium
The graphical stacked structure of film 41- thermistor 51- second mediums film 42.
As an example, it releases described first from silicon substrate 1 described in back-etching using deep reaction ion etching technique and is situated between
The graphical stacked structure of matter film 41- thermistor 51- second mediums film 42.The present invention is carved using a step deep reactive ion
Lose DRIE techniques release cross network structure 12 so that very low power sidewall, device dead volume are small.
As shown in FIG. 11 and 12, step 6) is finally carried out, provides a glass substrate 7, and the glass substrate 7 is bonded
In the back side of the silicon substrate 1.
As an example, the glass substrate 7 is bonded with silicon substrate 1 using static bonding process.
In a specific implementation process, the preparation method of the micro- thermal conductivity detector (TCD) of film-type includes the following steps：
1) silicon substrate 1 is provided, oxidation is carried out to the silicon substrate 1 and forms oxide layer 2 simultaneously graphically, as shown in Figure 4；
2) corroded using KOH and pad recess 3, corrosion depth is more than 0.5 micron and less than 10 microns, as shown in Figure 5；
3) silicon oxide deposition/silicon nitride film, then splash-proofing sputtering metal Pt/Ti or Ni/Cr or W/Ti or W/Re, and figure
Change, form thermistor 51 and metal pad, as shown in Figure 6；
4) deposit silicon nitride/silicon oxide film, as shown in Figure 7；
5) etch silicon nitride/silicon oxide film exposes the silicon of pad area and bonding region (it is worth noting that, temperature-sensitive is electric
Silicon nitride/silicon oxide film of 51 top of resistance and silica/silicon nitride of lower section can be with fully wrapped around metal Pr/Ti or Ni/Cr
Or W/Ti or W/Re, Pr/Ti or Ni/Cr or W/Ti or W/Re can also be clamped), as shown in Figure 8；
6) sheet glass 6 for having micro- raceway groove will be corroded and 1 front of silicon substrate carries out electrostatic bonding, as shown in Figure 9；
7) DRIE etches the back side silicon of silicon substrate 1, discharges cross network structure 12, as shown in Figure 10；
8) back side silicon of silicon substrate 1 and glass substrate 7 carry out electrostatic bond and merge scribing formation low-grade fever leading detector chip, such as
Shown in Figure 11 and Figure 12.
As described above, micro- thermal conductivity detector (TCD) of film-type of the present invention and preparation method thereof, has the advantages that：
1) two layers of silica/silicon nitride film up and down of thermistor 51 of the invention not only plays a protective role to it,
On the other hand due to the symmetrical deformation that can also play the role of stress equilibrium, reduce cross network structure 12 of structure,
So as to substantially increase the intensity and stability of 51 support construction of thermistor；
2) present invention is using step deep reaction ion etching DRIE techniques release cross network structure 12 so that very low power side
Wall is steep, and device dead volume is small.
So the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (22)
1. a kind of micro- thermal conductivity detector (TCD) of film-type, it is characterised in that：Including：
Silicon substrate is formed with very low power structure in the silicon substrate；
The graphical stacked structure formed by first medium film-thermistor-second medium film, hangs on the silicon substrate
Positive very low power structure in；
Sheet glass with micro- raceway groove is bonded to the silicon substrate front, and it is described so that the graphical stacked structure is located at
In micro- raceway groove of sheet glass；
Glass substrate is bonded to the back side of the silicon substrate.
2. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：The very low power structure is through described
Silicon substrate front and the back side.
3. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：It is also formed with welding in the silicon substrate
Disk groove is formed with pad structure in the pad recess, and the pad structure is electrical connected with the thermistor.
4. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：It is golden used by the thermistor
Belong to the one kind included in Pt/Ti laminations, Ni/Cr laminations, W/Ti laminations and W/Re laminations.
5. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：The first medium film and second
The planar structure of dielectric film is cross network structure, and has multiple extensions, each extension in the cross network structure
It is connect with the silicon substrate, to support the cross network structure.
6. the micro- thermal conductivity detector (TCD) of film-type according to claim 5, it is characterised in that：The thermistor is serrated edge
The cross network structure extension, and be connected between the pad structure.
7. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：The first medium film and second
Dielectric film includes the laminated construction of one or two kinds of compositions of silicon oxide film and silicon nitride film.
8. the micro- thermal conductivity detector (TCD) of film-type according to claim 7, it is characterised in that：The first medium film and second
The laminated construction that dielectric film is formed for silicon oxide film and silicon nitride film, the first medium film are from bottom to top oxidation
Silicon thin film and silicon nitride film laminated construction, the second medium film are folded from bottom to top for silicon nitride film with silicon oxide film
Layer structure.
9. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：The first medium film and second
Dielectric film is wraps up the thermistor or the clamping thermistor.
10. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：The graphical stacked structure hangs
It is hung on the middle section of the positive very low power structure of the silicon substrate, and the central area in micro- raceway groove of the sheet glass
Domain.
11. the micro- thermal conductivity detector (TCD) of film-type according to claim 1, it is characterised in that：The sheet glass and silicon substrate, institute
It is electrostatic bonding that glass substrate, which is stated, with silicon substrate.
12. a kind of preparation method of the micro- thermal conductivity detector (TCD) of film-type, which is characterized in that the preparation method includes step：
Step 1) provides a silicon substrate, and first medium film is deposited in the surface of silicon；
Step 2) forms in deposited metal on the first medium film and graphically thermistor；
Step 3) is thin to the first medium in deposition second medium film on the thermistor and first medium layer film
Film and the Film patterning graphical stacked structure for forming first medium film-thermistor-second medium film of second medium；
Step 4) provides a sheet glass for carrying micro- raceway groove, is bonded the sheet glass and the silicon substrate, and cause the figure
Change stacked structure to be located in micro- raceway groove of the sheet glass；
Step 5) from silicon substrate described in back-etching, releases the first medium film-thermistor-second medium film
Graphical stacked structure；
Step 6) provides a glass substrate, and the glass substrate is bonded to the back side of the silicon substrate.
13. the preparation method of the micro- thermal conductivity detector (TCD) of film-type according to claim 12, it is characterised in that：Step 1) is heavy
It is further included before product first medium film in pad area groove is formed on the silicon substrate the step of；After step 2) deposited metal, figure
Shapeization forms pad structure in the pad recess simultaneously, and the pad structure is electrical connected with the thermistor；Step
3) it is Film patterning to the first medium film and second medium while expose the key of the pad structure and silicon substrate in
Close region.
14. the preparation method of the micro- thermal conductivity detector (TCD) of film-type according to claim 12, it is characterised in that：In step 2),
The metal includes one kind in Pt/Ti laminations, Ni/Cr laminations, W/Ti laminations and W/Re laminations.
15. the preparation method of the micro- thermal conductivity detector (TCD) of film-type according to claim 12, it is characterised in that：Step 3) figure
After change, the planar structure of the first medium film and second medium film is cross network structure, and the cross network knot
There are multiple extensions, each extension is in the graphical heap of the first medium film-thermistor-second medium film in structure
After stack structure release, it is connect with the silicon substrate, to support the cross network structure.
16. the preparation method of the micro- thermal conductivity detector (TCD) of film-type according to claim 15, it is characterised in that：The temperature-sensitive electricity
Resistance is serrated to be extended, and be connected between the pad structure along the cross network structure.
17. the preparation method of the micro- thermal conductivity detector (TCD) of film-type according to claim 12, it is characterised in that：Described first is situated between
Matter film and second medium film include the laminated construction of one or two kinds of compositions of silicon oxide film and silicon nitride film.
18. the preparation method of the micro- thermal conductivity detector (TCD) of film-type according to claim 17, it is characterised in that：Described first is situated between
The laminated construction that matter film and second medium film are formed for silicon oxide film and silicon nitride film, the first medium film is certainly
It is lower and upper for silicon oxide film and silicon nitride film laminated construction, the second medium film from bottom to top for silicon nitride film with
Silicon oxide film laminated construction.
19. the preparation method of the micro- thermal conductivity detector (TCD) of film-type according to claim 12, it is characterised in that：Described first is situated between
Matter film and second medium film is wrap up the thermistor or the clamping thermistor.
20. the preparation method of the micro- thermal conductivity detector (TCD) of film-type according to claim 12, it is characterised in that：It is described graphical
Stacked structure hangs on the middle section of the positive very low power structure of the silicon substrate, and in step 4), the sheet glass and
After the silicon substrate bonding, the graphical stacked structure is located at the middle section in micro- raceway groove of the sheet glass.
21. the preparation method of the micro- thermal conductivity detector (TCD) of film-type according to claim 12, it is characterised in that：In step 5),
Using deep reaction ion etching technique from silicon substrate described in back-etching, the first medium film-thermistor-the is released
The graphical stacked structure of second medium film.
22. the preparation method of the micro- thermal conductivity detector (TCD) of film-type according to claim 12, it is characterised in that：In step 4)
Sheet glass is bonded with the glass substrate in silicon substrate, step 6) with silicon substrate using static bonding process.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011044547A2 (en) * | 2009-10-09 | 2011-04-14 | Services Petroliers Schlumberger | Micro-thermal conductivity detector, method to fabricate such and chromatography system using such |
| CN102730622A (en) * | 2011-04-01 | 2012-10-17 | 中国科学院电子学研究所 | Integrated chip of micro thermal conductive detector and manufacturing method for same |
| CN104764773A (en) * | 2015-04-20 | 2015-07-08 | 中国科学院电子学研究所 | Cantilever beam type metal oxide detector and manufacturing method thereof |
| CN104828771A (en) * | 2015-03-16 | 2015-08-12 | 中国科学院电子学研究所 | Micro thermal conductivity detector with integrated filtering structure and manufacturing method |
| CN105136871A (en) * | 2015-06-19 | 2015-12-09 | 上海集成电路研发中心有限公司 | Micro thermal conductivity detector structure and processing and manufacturing method thereof |
| CN105765378A (en) * | 2014-04-14 | 2016-07-13 | 西门子公司 | A thermal conductivity detector |
-
2016
- 2016-12-08 CN CN201611124545.9A patent/CN108181415B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011044547A2 (en) * | 2009-10-09 | 2011-04-14 | Services Petroliers Schlumberger | Micro-thermal conductivity detector, method to fabricate such and chromatography system using such |
| CN102549422A (en) * | 2009-10-09 | 2012-07-04 | 普拉德研究及开发股份有限公司 | Micro-thermal conductivity detector, method to fabricate such and chromatography system using such |
| CN102730622A (en) * | 2011-04-01 | 2012-10-17 | 中国科学院电子学研究所 | Integrated chip of micro thermal conductive detector and manufacturing method for same |
| CN105765378A (en) * | 2014-04-14 | 2016-07-13 | 西门子公司 | A thermal conductivity detector |
| CN104828771A (en) * | 2015-03-16 | 2015-08-12 | 中国科学院电子学研究所 | Micro thermal conductivity detector with integrated filtering structure and manufacturing method |
| CN104764773A (en) * | 2015-04-20 | 2015-07-08 | 中国科学院电子学研究所 | Cantilever beam type metal oxide detector and manufacturing method thereof |
| CN105136871A (en) * | 2015-06-19 | 2015-12-09 | 上海集成电路研发中心有限公司 | Micro thermal conductivity detector structure and processing and manufacturing method thereof |
Non-Patent Citations (4)
| Title |
|---|
| B. C. KAANTA 等: "High Sensitivity Micro-Thermal Conductivity Detector for Gas Chromatography" * |
| D. CRUZ 等: "Microfabricated thermal conductivity detector for the micro-ChemLabTM" * |
| SUN J H 等: "Design, modeling, microfabrication and characterization of novel micro thermal conductivity detector" * |
| 孙建海 等: "基于MEMS技术的微型热导检测器的研制" * |
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