CN108181415B - Thin film type micro heat conduction detector and preparation method thereof - Google Patents
Thin film type micro heat conduction detector and preparation method thereof Download PDFInfo
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- CN108181415B CN108181415B CN201611124545.9A CN201611124545A CN108181415B CN 108181415 B CN108181415 B CN 108181415B CN 201611124545 A CN201611124545 A CN 201611124545A CN 108181415 B CN108181415 B CN 108181415B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
- G01N30/02—Column chromatography
- G01N30/62—Detectors specially adapted therefor
- G01N30/64—Electrical detectors
- G01N30/66—Thermal conductivity detectors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a thin film type micro heat conduction detector and a preparation method thereof, wherein the thin film type micro heat conduction detector is provided with a sandwich structure, and comprises a glass substrate, a silicon wafer with micro grooves and glass with micro grooves from bottom to top in sequence; the cross reticular structure is manufactured on the surface of the silicon chip and is suspended in the micro-channel, and the structure is a thermistor protected by two layers of silicon oxide/silicon nitride films; the key technology comprises etching the silicon release cross network structure on the back of the silicon wafer through a Deep Reactive Ion Etching (DRIE) technology, and completing the manufacture of the micro heat conduction detector chip through two times of electrostatic bonding. The upper and lower layers of silicon oxide/silicon nitride films of the thermistor not only play a role in protecting the thermistor, but also play a role in balancing stress due to the symmetrical distribution of the structure, so that the deformation of a cross reticular structure is reduced, and the strength and the stability of the thermistor supporting structure are greatly improved; and the cross net structure is released by adopting a one-step DRIE process, so that the side wall of the micro-groove is steep, and the dead volume of the device is small.
Description
Technical Field
The invention belongs to the field of micro-electro-mechanical systems, and particularly relates to a thin film type micro heat conduction detector and a manufacturing method thereof.
Background
A thermal conductivity detector is an important detector of a gas chromatograph that is sensitive only to the concentration of the gas being detected and responds to almost all gases. The traditional gas chromatograph thermal conductivity detector is generally processed by stainless steel or ceramic, has large volume, heavy weight and high power consumption, and more importantly, because of the limitation of processing technology, the traditional thermal conductivity detector generally has large dead volume, about tens to hundreds of microliters, which limits the reduction of the detection lower limit of the thermal conductivity detector.
With the development of MEMS (Micro-electro-mechanical system) technology, the Micro heat conduction detector chip designed and manufactured by adopting the MEMS technology has the advantages of small volume, light weight, low power consumption and the like, and more importantly, the dead volume of the heat conduction detector manufactured based on the MEMS technology is greatly reduced (generally less than 1 microliter and in the order of nano liters), and the detection lower limit can reach several ppm or even less than 1ppm.
In the prior art micro heat conduction detector, the thermistor is fabricated on the supporting layer and suspended in the microchannel, but there are several problems:
1. the support layer of the thermistor is generally a silicon nitride single-layer film or a silicon nitride/silicon oxide composite film structure, and the released structure can be broken, deformed and collapsed due to the problems of overlarge stress or mismatching.
2. Etching the silicon release support structure from the front side (thermistor side) and forming the corresponding micro-channels based on potassium hydroxide (KOH) anisotropic etching or a two-step deep reactive ion etching process (DRIE, first anisotropic etching and second isotropic etching) can lead to excessive dead volume.
The above-mentioned problems are technical problems that a researcher in the field working on the micro heat conduction detector needs to solve in order to obtain a high performance micro heat conduction detector.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a thin film type micro heat conduction detector and a method for manufacturing the same, which are used for solving the problems of easy breakage of a supporting layer of a thermistor and excessive dead volume in the prior art.
To achieve the above and other related objects, the present invention provides a thin film type micro heat conduction detector comprising: a silicon substrate in which a micro-trench structure is formed; a patterned stacked structure formed by a first dielectric film, a thermistor and a second dielectric film is suspended in a micro-groove structure on the front surface of the silicon substrate; a glass sheet with micro-channels bonded to the front side of the silicon substrate such that the patterned stack is within the micro-channels of the glass sheet; and a glass substrate bonded to the back surface of the silicon substrate.
As a preferable mode of the thin film type micro heat conduction detector, the micro groove structure penetrates through the front surface and the back surface of the silicon substrate.
As a preferable scheme of the film type micro heat conduction detector, a pad groove is formed in the silicon substrate, a pad structure is formed in the pad groove, and the pad structure is electrically connected with the thermistor.
As a preferable mode of the film type micro heat conduction detector of the invention, the metal used by the thermistor comprises one of Pt/Ti lamination, ni/Cr lamination, W/Ti lamination and W/Re lamination.
As a preferable mode of the thin film type micro heat conduction detector of the present invention, the planar structure of the first dielectric thin film and the second dielectric thin film is a cross-web structure, and the cross-web structure has a plurality of extending portions therein, and each extending portion is connected with the silicon substrate to support the cross-web structure.
As a preferable mode of the thin film type micro heat conduction detector of the invention, the thermistor extends along the cross network structure in a zigzag shape and is connected between the bonding pad structures.
As a preferable mode of the thin film type micro heat conduction detector of the present invention, the first dielectric thin film and the second dielectric thin film include a stacked structure composed of one or two of a silicon oxide thin film and a silicon nitride thin film.
Preferably, the first dielectric film and the second dielectric film are laminated structures formed by a silicon oxide film and a silicon nitride film, the first dielectric film is laminated structures formed by a silicon oxide film and a silicon nitride film from bottom to top, and the second dielectric film is laminated structures formed by a silicon nitride film and a silicon oxide film from bottom to top.
As a preferable mode of the film type micro heat conduction detector of the present invention, the first dielectric film and the second dielectric film are used for wrapping the thermistor or holding the thermistor.
As a preferred embodiment of the thin film type micro heat conduction detector of the present invention, the patterned stack structure is suspended from a central region of the micro trench structure on the front surface of the silicon substrate and is located in a central region within the micro trench of the glass sheet.
As a preferable mode of the film type micro heat conduction detector, the glass sheet and the silicon substrate, and the glass substrate and the silicon substrate are all bonded electrostatically.
The invention also provides a preparation method of the film type micro heat conduction detector, which comprises the following steps: step 1), providing a silicon substrate, and depositing a first dielectric film on the surface of the silicon substrate; step 2), depositing metal on the first dielectric film and patterning to form a thermistor; step 3), depositing a second dielectric film on the thermistor and the first dielectric layer film, and patterning the first dielectric film and the second dielectric film to form a patterned stack structure of the first dielectric film, the thermistor and the second dielectric film; step 4) providing a glass sheet with micro-channels, bonding the glass sheet and the silicon substrate, and positioning the patterned stacked structure within the micro-channels of the glass sheet; step 5), etching the silicon substrate from the back surface to release the patterned stacking structure of the first dielectric film, the thermistor and the second dielectric film; step 6), providing a glass substrate and bonding the glass substrate to the back surface of the silicon substrate.
As a preferable scheme of the preparation method of the film type micro heat conduction detector, the method comprises the following steps that 1) a step of forming a pad area groove on a silicon substrate is further included before a first dielectric film is deposited; step 2) after metal is deposited, patterning is carried out, and a pad structure is formed in the pad groove at the same time, wherein the pad structure is electrically connected with the thermistor; in step 3), the first dielectric film and the second dielectric film are patterned, and the bonding pad structure and the bonding area of the silicon substrate are exposed at the same time.
As a preferable mode of the method for producing a thin film type micro heat conduction detector of the present invention, in the step 2), the metal includes one of a Pt/Ti stack, a Ni/Cr stack, a W/Ti stack and a W/Re stack.
As a preferable scheme of the preparation method of the film type micro heat conduction detector, after the patterning, step 3), the planar structures of the first dielectric film and the second dielectric film are cross-meshed structures, and the cross-meshed structures are provided with a plurality of extending parts, and each extending part is connected with the silicon substrate after the patterned stacking structure of the first dielectric film, the thermistor and the second dielectric film is released so as to support the cross-meshed structures.
As a preferable mode of the method for manufacturing the thin film type micro heat conduction detector of the invention, the thermistor extends along the cross network structure in a zigzag shape and is connected between the bonding pad structures.
As a preferable mode of the preparation method of the film type micro heat conduction detector, the first dielectric film and the second dielectric film comprise a laminated structure formed by one or two of a silicon oxide film and a silicon nitride film.
Preferably, the first dielectric film and the second dielectric film are laminated structures formed by a silicon oxide film and a silicon nitride film, the first dielectric film is laminated structures formed by a silicon oxide film and a silicon nitride film from bottom to top, and the second dielectric film is laminated structures formed by a silicon nitride film and a silicon oxide film from bottom to top.
As a preferable scheme of the preparation method of the film type micro heat conduction detector, the first medium film and the second medium film are used for wrapping the thermistor or clamping the thermistor.
As a preferable mode of the method for manufacturing a thin film type micro heat conduction detector of the present invention, the patterned stacked structure is suspended in a central region of the micro trench structure on the front surface of the silicon substrate, and in the step 4), after the glass sheet and the silicon substrate are bonded, the patterned stacked structure is located in the central region of the micro trench of the glass sheet.
In step 5), the silicon substrate is etched from the back by using a deep reactive ion etching process to release the patterned stacked structure of the first dielectric film, the thermistor and the second dielectric film.
As a preferable scheme of the preparation method of the film type micro heat conduction detector, the glass sheet and the silicon substrate in the step 4) and the glass substrate and the silicon substrate in the step 6) are bonded by adopting an electrostatic bonding process.
As described above, the thin film type micro heat conduction detector and the preparation method thereof have the following beneficial effects:
1) The upper and lower layers of silicon oxide/silicon nitride films of the thermistor not only play a role in protecting the thermistor, but also play a role in balancing stress due to the symmetrical distribution of the structure, so that the deformation of the cross reticular structure is reduced, and the strength and the stability of the thermistor supporting structure are greatly improved;
2) The invention adopts a one-step deep reactive ion etching DRIE process to release the cross net structure, so that the side wall of the micro-groove is steep, and the dead volume of the device is small.
Drawings
FIG. 1 is a schematic diagram showing a cross-web structure in a thin film micro heat conduction detector according to the present invention.
Fig. 2 shows a micro heat conduction detector with four thermistors.
Fig. 3 shows a wheatstone bridge of four thermistors.
Fig. 4 to 12 are schematic structural views showing steps of a method for manufacturing a thin film type micro heat conduction detector according to the present invention, wherein fig. 12 is a schematic structural view of the thin film type micro heat conduction detector.
Description of element reference numerals
1. Silicon substrate
11. Micro-groove structure
12. Cross net structure
2. Oxide layer
3. Bonding pad groove
41. First dielectric film
42. Second dielectric film
51. Thermistor with high temperature resistance
52. Bonding pad structure
6. Glass sheet with microchannels
7. Glass substrate
81. 83 microchannel
82. Interface channel for mounting capillary
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1-12. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
As shown in fig. 11 and 12, the thin film type micro heat conduction detector of the present invention has a sandwich structure, and is composed of a glass substrate 7, a silicon substrate 1 with micro grooves, and a glass sheet 6 with micro grooves in this order from bottom to top. The cross-web structure 12 is formed on the surface of the silicon substrate 1 and suspended in the central region of the micro-trench (the distance from the cross-web structure to the two sidewalls of the micro-trench is equal), as shown in fig. 11 and 12, and the structure is a thermistor 51 protected by two silicon oxide/silicon nitride films, which are respectively from top to bottom: silicon oxide/silicon nitride, thermistor 51, silicon nitride/silicon oxide, it is noted that the upper silicon oxide/silicon nitride is not shown in fig. 1 in order to more clearly illustrate the structure of thermistor 51. In addition, it should be noted that: other configurations of the cross-web structure 12 and the thermistor 51 may be employed and are not limited to the configuration shown in fig. 1. This new structural design solves two problems in the prior art well: firstly, the upper and lower layers of silicon oxide/silicon nitride films of the thermistor 51 not only play a role in protecting the upper and lower layers of silicon oxide/silicon nitride films, but also play a role in balancing stress due to the symmetrical distribution of the structure, so that the deformation of the cross-meshed structure 12 is reduced; second, the cross-web 12 is released using a one-step DRIE process, the micro-trench sidewalls are steep and the device dead volume is small.
In fig. 11 and 12, only one thermistor 51 is shown, and in general, a microheat conduction detector includes four thermistors 51R1, R2, R3, R4, as shown in fig. 2, where R1, R4 are located in one microchannel 81 and R2, R3 are located in another microchannel 83, each having an interface channel 82 for mounting a capillary at each end. R1, R2, R3 and R4 are connected in the order shown in FIG. 3 to form a Wheatstone bridge.
As shown in fig. 11 and 12, the present embodiment provides a thin film type micro heat conduction detector, which includes: a silicon substrate 1, wherein a micro-groove structure 11 is formed in the silicon substrate 1; a patterned stacked structure formed by the first dielectric film 41, the thermistor 51 and the second dielectric film 42 is suspended in the micro-groove structure 11 on the front surface of the silicon substrate 1; a glass sheet 6 with micro-channels bonded to the front side of the silicon substrate 1 such that the patterned stack is located within the micro-channels of the glass sheet 6; a glass substrate 7 bonded to the back surface of the silicon substrate 1.
As an example, the micro-trench structure 11 penetrates the front and back surfaces of the silicon substrate 1.
As an example, the silicon substrate 1 further has a pad groove 3 formed therein, and a pad structure 52 is formed in the pad groove, and the pad structure 52 is electrically connected to the thermistor 51. The metal used for the thermistor 51 includes one of a Pt/Ti stack, a Ni/Cr stack, a W/Ti stack and a W/Re stack.
As an example, the planar structures of the first dielectric film 41 and the second dielectric film 42 are cross-web structures 12, and the cross-web structures 12 have a plurality of extensions therein, and each extension is connected to the silicon substrate 1 to support the cross-web structures 12. The thermistor 51 extends along the cross web 12 in a zigzag pattern and is connected between the pad structures 52.
As an example, the first dielectric film 41 and the second dielectric film 42 may include a stacked structure of one or both of a silicon oxide film and a silicon nitride film. The first dielectric film 41 and the second dielectric film 42 are used for wrapping the thermistor 51 or for clamping the thermistor 51.
As an example, the patterned stack is located in a central region within the micro-channel of the glass sheet 6.
As an example, the glass sheet 6 is electrostatically bonded to the silicon substrate 1, and the glass substrate 7 is electrostatically bonded to the silicon substrate 1.
As shown in fig. 4 to 12, the present embodiment further provides a method for manufacturing a thin film type micro heat conduction detector, the method comprising the steps of:
as shown in fig. 4 to 6, step 1) is first performed, a silicon substrate 1 is provided, a pad area groove is formed on the silicon substrate 1 as shown in fig. 4 to 5, and then a first dielectric film 41 is deposited on the surface of the silicon substrate 1 as shown in fig. 6.
As shown in fig. 6, step 2) is then performed to deposit metal on the first dielectric film 41 and pattern the thermistor 51.
By way of example, the metal includes one of a Pt/Ti stack, a Ni/Cr stack, a W/Ti stack, and a W/Re stack.
In addition, in this embodiment, after the metal is deposited in step 2), a pad structure 52 is patterned in the pad groove 3, and the pad structure 52 is electrically connected to the thermistor 51.
As shown in fig. 7 to 8, next, step 3) is performed to deposit a second dielectric thin film 42 on the thermistor 51 and the first dielectric thin film, and pattern the first dielectric thin film 41 and the second dielectric thin film 42 to form a patterned stack structure of the first dielectric thin film 41, the thermistor 51, and the second dielectric thin film 42.
As an example, after patterning in step 3), the planar structures of the first dielectric thin film 41 and the second dielectric thin film 42 are cross-meshed structures 12, and the cross-meshed structures 12 have a plurality of extending portions, as shown in fig. 1, and each extending portion is connected to the silicon substrate 1 after the patterned stacked structure of the first dielectric thin film 41-the thermistor 51-the second dielectric thin film 42 is released, so as to support the cross-meshed structures 12.
As an example, the thermistor 51 extends along the cross web 12 in a zigzag shape and is connected between the pad structures 52, as shown in fig. 1.
As an example, the first dielectric film 41 and the second dielectric film 42 are used to wrap the thermistor 51 or sandwich the thermistor 51.
As an example, the first dielectric film 41 and the second dielectric film 42 may include a stacked structure of one or both of a silicon oxide film and a silicon nitride film. In this embodiment, the first dielectric film 41 is a stacked structure of a silicon oxide film and a silicon nitride film, the second dielectric film 42 is a stacked structure of a silicon nitride film and a silicon oxide film, that is, the silicon nitride film contacts the thermistor 51, and the silicon oxide film is located outside the silicon nitride film, so that the silicon oxide film is located outside the silicon nitride film, which can more effectively protect the thermistor 51, and increase the oxidation resistance of the thermistor 51 and the etching/corrosion resistance of the stacked structure.
The upper and lower layers of silicon oxide/silicon nitride films of the thermistor 51 not only play a role in protecting the thermistor, but also play a role in balancing stress due to the symmetrical distribution of the structure, so that the deformation of the crossed net structure 12 is reduced, and the strength and stability of the supporting structure of the thermistor 51 are greatly improved.
As an example, in step 3), the first dielectric film 41 and the second dielectric film 42 are patterned to expose the bonding pad structure 52 and the bonding region of the silicon substrate 1.
As shown in fig. 9, step 4) is then performed, providing a glass sheet 6 with micro-channels, bonding the glass sheet 6 and the silicon substrate 1, and positioning the patterned stack within the micro-channels of the glass sheet 6, the micro-channels of the glass sheet 6 and the micro-channels on the silicon substrate 1 together forming micro-channels 81, 83 of a thin film type micro-heat conduction detector.
As an example, after bonding the glass sheet 6 and the silicon substrate 1, the patterned stack structure is located in the central region within the micro-channel of the glass sheet 6.
As an example, the glass sheet 6 in step 4) is bonded to the silicon substrate 1 using an electrostatic bonding process.
It should be noted that the specific dimensions of the micro-channels on the glass and the micro-trenches on the silicon substrate may be determined according to practical needs. The size of the micro-channels on the glass can be determined by controlling the etching time; the depth of the micro-grooves on the silicon substrate is determined by the thickness of the silicon wafer.
As shown in fig. 10, step 5) is performed to etch the silicon substrate 1 from the back surface, releasing the patterned stack structure of the first dielectric thin film 41-thermistor 51-second dielectric thin film 42.
As an example, the patterned stack structure of the first dielectric thin film 41-the thermistor 51-the second dielectric thin film 42 is released by etching the silicon substrate 1 from the back side using a deep reactive ion etching process. The invention adopts a one-step deep reactive ion etching DRIE process to release the cross network structure 12, so that the side wall of the micro-groove is steep, and the dead volume of the device is small.
As shown in fig. 11 and 12, step 6) is finally performed to provide a glass substrate 7, and the glass substrate 7 is bonded to the back surface of the silicon substrate 1.
As an example, the glass substrate 7 is bonded to the silicon substrate 1 using an electrostatic bonding process.
In a specific implementation process, the preparation method of the thin film type micro heat conduction detector comprises the following steps:
1) Providing a silicon substrate 1, oxidizing the silicon substrate 1 to form an oxide layer 2 and patterning the oxide layer 2, as shown in fig. 4;
2) Etching the pad groove 3 by KOH to a depth of more than 0.5 micrometers and less than 10 micrometers as shown in FIG. 5;
3) Depositing a silicon oxide/silicon nitride film, sputtering metal Pt/Ti or Ni/Cr or W/Ti or W/Re, and patterning to form a thermistor 51 and a metal pad, as shown in FIG. 6;
4) Depositing a silicon nitride/silicon oxide film as shown in fig. 7;
5) Etching the silicon nitride/silicon oxide film to expose the silicon of the bonding pad region and bonding region (note that the silicon nitride/silicon oxide film above the thermistor 51 and the silicon oxide/silicon nitride film below can completely encapsulate the metal Pr/Ti or Ni/Cr or W/Ti or W/Re, or can clamp Pr/Ti or Ni/Cr or W/Ti or W/Re), as shown in FIG. 8;
6) Electrostatic bonding of the microchannel etched glass sheet 6 to the front surface of the silicon substrate 1 is performed as shown in fig. 9;
7) DRIE etching the back side silicon of the silicon substrate 1, releasing the cross-web structure 12, as shown in fig. 10;
8) The back surface silicon of the silicon substrate 1 is electrostatically bonded to the glass substrate 7 and diced to form a micro thermal conductivity detector chip, as shown in fig. 11 and 12.
As described above, the thin film type micro heat conduction detector and the preparation method thereof have the following beneficial effects:
1) The upper and lower layers of silicon oxide/silicon nitride films of the thermistor 51 not only play a role in protecting the thermistor, but also play a role in balancing stress due to the symmetrical distribution of the structure, so that the deformation of the crossed net structure 12 is reduced, and the strength and stability of the supporting structure of the thermistor 51 are greatly improved;
2) The invention adopts a one-step deep reactive ion etching DRIE process to release the cross network structure 12, so that the side wall of the micro-groove is steep, and the dead volume of the device is small.
Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (16)
1. A thin film micro heat conduction detector, characterized by: comprising the following steps:
a silicon substrate in which a micro-trench structure is formed;
a patterned stacked structure formed by a first dielectric film, a thermistor and a second dielectric film is suspended in a micro-groove structure on the front surface of the silicon substrate; the first dielectric film and the second dielectric film are laminated structures formed by a silicon oxide film and a silicon nitride film, the first dielectric film is a laminated structure of the silicon oxide film and the silicon nitride film from bottom to top, and the second dielectric film is a laminated structure of the silicon nitride film and the silicon oxide film from bottom to top; the first medium film and the second medium film are used for wrapping the thermistor or clamping the thermistor;
a glass sheet with micro-channels bonded to the front side of the silicon substrate such that the patterned stack is within the micro-channels of the glass sheet;
and a glass substrate bonded to the back surface of the silicon substrate.
2. The thin film micro heat conductivity detector according to claim 1, wherein: the micro-groove structure penetrates through the front surface and the back surface of the silicon substrate.
3. The thin film micro heat conductivity detector according to claim 1, wherein: and a pad groove is formed in the silicon substrate, a pad structure is formed in the pad groove, and the pad structure is electrically connected with the thermistor.
4. The thin film micro heat conductivity detector according to claim 1, wherein: the metal adopted by the thermistor comprises one of Pt/Ti lamination, ni/Cr lamination, W/Ti lamination and W/Re lamination.
5. A thin film micro heat conduction detector according to claim 3 wherein: the plane structures of the first dielectric film and the second dielectric film are cross net structures, and the cross net structures are provided with a plurality of extending parts, and each extending part is connected with the silicon substrate to support the cross net structures.
6. The thin film micro heat conductivity detector according to claim 5, wherein: the thermistor extends along the cross network structure in a zigzag mode and is connected between the bonding pad structures.
7. The thin film micro heat conductivity detector according to claim 1, wherein: the patterned stack structure is suspended from a central region of the micro-trench structure on the front side of the silicon substrate and is located in a central region within the micro-channel of the glass sheet.
8. The thin film micro heat conductivity detector according to claim 1, wherein: the glass sheet is electrostatically bonded to the silicon substrate, and the glass substrate is electrostatically bonded to the silicon substrate.
9. A method for manufacturing a thin film type micro heat conduction detector, comprising the steps of:
step 1), providing a silicon substrate, and depositing a first dielectric film on the surface of the silicon substrate;
step 2), depositing metal on the first dielectric film and patterning to form a thermistor;
step 3), depositing a second dielectric film on the thermistor and the first dielectric layer film, and patterning the first dielectric film and the second dielectric film to form a patterned stack structure of the first dielectric film, the thermistor and the second dielectric film; the first dielectric film and the second dielectric film are laminated structures formed by a silicon oxide film and a silicon nitride film, the first dielectric film is a laminated structure of the silicon oxide film and the silicon nitride film from bottom to top, and the second dielectric film is a laminated structure of the silicon nitride film and the silicon oxide film from bottom to top; the first medium film and the second medium film are used for wrapping the thermistor or clamping the thermistor;
step 4) providing a glass sheet with micro-channels, bonding the glass sheet and the silicon substrate, and positioning the patterned stacked structure within the micro-channels of the glass sheet;
step 5), etching the silicon substrate from the back surface to release the patterned stacking structure of the first dielectric film, the thermistor and the second dielectric film;
step 6), providing a glass substrate and bonding the glass substrate to the back surface of the silicon substrate.
10. The method for manufacturing a thin film type micro heat conduction detector according to claim 9, wherein: step 1), before depositing the first dielectric film, the method further comprises the step of forming a bonding pad groove on the silicon substrate; step 2) after metal is deposited, patterning is carried out, and a pad structure is formed in the pad groove at the same time, wherein the pad structure is electrically connected with the thermistor; in step 3), the first dielectric film and the second dielectric film are patterned, and the bonding pad structure and the bonding area of the silicon substrate are exposed at the same time.
11. The method for manufacturing a thin film type micro heat conduction detector according to claim 9, wherein: in step 2), the metal comprises one of a Pt/Ti stack, a Ni/Cr stack, a W/Ti stack and a W/Re stack.
12. The method for manufacturing a thin film type micro heat conduction detector according to claim 10, wherein: and 3) after patterning, the planar structures of the first dielectric film and the second dielectric film are cross-meshed structures, the cross-meshed structures are provided with a plurality of extending parts, and each extending part is connected with the silicon substrate after the patterned stacking structure of the first dielectric film, the thermistor and the second dielectric film is released so as to support the cross-meshed structures.
13. The method for manufacturing a thin film micro heat conduction detector according to claim 12, wherein: the thermistor extends along the cross network structure in a zigzag mode and is connected between the bonding pad structures.
14. The method for manufacturing a thin film type micro heat conduction detector according to claim 9, wherein: the patterned stacked structure is suspended in a central region of the micro-trench structure on the front side of the silicon substrate, and in step 4), the patterned stacked structure is located in the central region of the micro-trench of the glass sheet after the glass sheet and the silicon substrate are bonded.
15. The method for manufacturing a thin film type micro heat conduction detector according to claim 9, wherein: and 5) etching the silicon substrate from the back surface by adopting a deep reactive ion etching process, and releasing the patterned stacking structure of the first dielectric film, the thermistor and the second dielectric film.
16. The method for manufacturing a thin film type micro heat conduction detector according to claim 9, wherein: the glass sheet and the silicon substrate in the step 4) and the glass substrate and the silicon substrate in the step 6) are bonded by adopting an electrostatic bonding process.
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