CN108130598A - The special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece and its application method - Google Patents
The special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece and its application method Download PDFInfo
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- CN108130598A CN108130598A CN201711255218.1A CN201711255218A CN108130598A CN 108130598 A CN108130598 A CN 108130598A CN 201711255218 A CN201711255218 A CN 201711255218A CN 108130598 A CN108130598 A CN 108130598A
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- 239000000654 additive Substances 0.000 title claims abstract description 36
- 230000000996 additive effect Effects 0.000 title claims abstract description 33
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 33
- 238000005520 cutting process Methods 0.000 title claims abstract description 31
- 239000003513 alkali Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 15
- 235000008216 herbs Nutrition 0.000 claims abstract description 42
- 210000002268 wool Anatomy 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 18
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 17
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 17
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 17
- 239000004115 Sodium Silicate Substances 0.000 claims abstract description 16
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 16
- 235000019795 sodium metasilicate Nutrition 0.000 claims abstract description 16
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052911 sodium silicate Inorganic materials 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 15
- 239000004094 surface-active agent Substances 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 11
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000003945 anionic surfactant Substances 0.000 claims abstract description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 3
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 2
- 238000006136 alcoholysis reaction Methods 0.000 claims description 2
- 150000007942 carboxylates Chemical class 0.000 claims description 2
- 238000002242 deionisation method Methods 0.000 claims description 2
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 2
- 239000000811 xylitol Substances 0.000 claims description 2
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims description 2
- 229960002675 xylitol Drugs 0.000 claims description 2
- 235000010447 xylitol Nutrition 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 claims 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 5
- 231100000252 nontoxic Toxicity 0.000 abstract description 2
- 230000003000 nontoxic effect Effects 0.000 abstract description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 150000001450 anions Chemical class 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 239000003643 water by type Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
- Weting (AREA)
Abstract
The present invention relates to a kind of special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece, including following component：Polyalcohol, polyvinyl alcohol, anion surfactant, water-soluble silicon based antifoam agent, sodium metasilicate and deionized water, the weight content of polyalcohol is 0.5 5%, the weight content of polyvinyl alcohol is 0.2 2%, and surfactant weight content is 0.02 0.2%, and water-soluble silicon based antifoam agent weight content is 0.01 1%, sodium metasilicate weight content is 0.5 5%, and surplus is deionized water.After alkali making herbs into wool being carried out using the additive in the present invention to Buddha's warrior attendant wire cutting monocrystalline silicon piece, it is uniform that the acquisition of making herbs into wool time can be shortened, tiny and intensive pyramid matte, and still retain preferable making herbs into wool effect using the later stage in Woolen-making liquid, the problems such as improving the stability and consistency of process for etching, and being effectively improved the stria residual of monocrystalline silicon piece after making herbs into wool.The additive is non-toxic, easily implements, and stability is good, has good actual application value.
Description
Technical field
The present invention relates to a kind of special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece and its application methods, belong to chemistry
Auxiliary agent technical field.
Background technology
The cutting of monocrystalline silicon piece used is mainly using Buddha's warrior attendant line cutting technology in photovoltaic industry at present, because there is cutting to imitate for it
The advantages that rate is high, and processing cost is low and environmental pollution is small, receives more and more attention, is increasingly becoming slicing single crystal silicon technology
Mainstream and future thrust.
Since diamond wire incision principle is different from the principle of mortar wire cutting, the silicon chip surface of Buddha's warrior attendant wire cutting is in addition to brittleness
Outside the broken irregular pit broken to form, also there are the smooth cutting trace of a large amount of plasticity and the amorphous silicons of remained on surface.This
A little factors can influence the pyramid pile effects after traditional handicraft making herbs into wool.
Conventional single alkali process for etching adds appropriate isopropanol and silicic acid generally using sodium hydroxide or potassium hydroxide at present
The mixed solution of sodium carries out making herbs into wool.The drawback is that：The making herbs into wool time is long, and making herbs into wool pyramid is big and uneven, to original silicon chip surface
Conditions dictate is high, and chemical cost is also bigger, and bath life is short, making herbs into wool poor repeatability, and isopropanol performance amount is big etc. asks
Topic.In the application process of actual field, there are operation difficulty height, bring making herbs into wool bad order rate very high, cell piece conversion effect
The low problem of rate.
In order to solve the technical barrier that conventional alkali process for etching is brought, need to find a kind of additive for assisting making herbs into wool,
The defects of pile effects after optimization making herbs into wool reduce the raindrop generated during making herbs into wool, and piece indigo plant prints, and improve the stabilization of Woolen-making liquid
Property.
Invention content
It is an object of the present invention to provide one kind to be exclusively used in Buddha's warrior attendant wire cutting monocrystalline silicon wafer alkaline flocking additive, which can
Effectively shorten the making herbs into wool time, obtain uniform, tiny and intensive pyramid matte, improve the stria residual of monocrystalline silicon piece after making herbs into wool
The problems such as.For this purpose, the present invention adopts the following technical scheme that：
To achieve these goals, technical scheme is as follows.
A kind of special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece, including following component：Polyalcohol, polyvinyl alcohol,
Anion surfactant, water-soluble silicon based antifoam agent, sodium metasilicate and deionized water, the weight content of polyalcohol is 0.5-5%,
The weight content of polyvinyl alcohol be 0.2-2%, surfactant weight content be 0.02-0.2%, water-soluble silicon based antifoam agent weight
Content is 0.01-1%, and sodium metasilicate weight content is 0.5-5%, and surplus is deionized water.
Further, polyalcohol is pentaerythrite, xylitol or D-sorbite.
Further, the alcoholysis degree of polyvinyl alcohol is 88% or 98%.
Further, anion surfactant is sulfosalt surfactant, phosphate surfactant active or carboxylate
Surfactant.
Further, application method of the above-mentioned additive in Buddha's warrior attendant wire cutting monocrystalline silicon wafer alkaline flocking technique includes as follows
Step：
A) additive preparation：By polyalcohol, polyvinyl alcohol, anion surfactant, water-soluble silicon based antifoam agent, sodium metasilicate
It is dissolved in deionization, obtains additive；Wherein, the weight content of polyalcohol is 0.5-5%；The weight content of polyvinyl alcohol is
0.2-2%；Anion surfactant weight content is 0.02-0.2%；Silicon based antifoam agent weight content is 0.01-1%；Sodium metasilicate
Weight content is 0.5-5%；
B) with alkaline Woolen-making liquid：Sodium hydroxide or potassium hydroxide are dissolved in deionized water and obtain alkali mixed liquor, it then will step
It is rapid a) made from additive be added in the alkali mixed solution, obtain alkaline Woolen-making liquid；Wherein, sodium hydroxide or potassium hydroxide
Weight content is 0.5-3%；The weight content of additive is 0.5-5%；
C) making herbs into wool：Buddha's warrior attendant wire cutting monocrystalline silicon piece is submerged into the alkaline Woolen-making liquid that step b) obtained and carries out making herbs into wool.
Further, in step c), the making herbs into wool temperature during making herbs into wool is 75-90 DEG C, and the making herbs into wool time is 300-1200s.
The advantageous effect of the invention is：Alkali system is carried out to Buddha's warrior attendant wire cutting monocrystalline silicon piece using the additive in the present invention
After suede, can shorten the making herbs into wool time obtains uniform, tiny and intensive pyramid matte, and Woolen-making liquid still retained using the later stage compared with
Good making herbs into wool effect, improves the stability and consistency of process for etching, and is effectively improved the stria residual of monocrystalline silicon piece after making herbs into wool
The problems such as.The additive is non-toxic, easily implements, and stability is good, has good actual application value.
Description of the drawings
Scanning electron microscope (SEM) photograph after Fig. 1 Buddha's warrior attendant wire cutting monocrystalline silicon piece routine making herbs into wool.
Scanning electron microscope (SEM) photograph after Fig. 2 Buddha's warrior attendant wire cuttings monocrystalline silicon piece patent embodiment 3 of the present invention.
Specific embodiment
The specific embodiment of the present invention is described with reference to embodiment, to be better understood from the present invention.
Embodiment 1
A kind of etching method of monocrystalline silicon piece of offer in the present embodiment, takes following processing step：
1）Additive preparation：Under stirring, by 2.0g polyalcohols, 1.0g polyvinyl alcohol, 0.1g anion surface actives
The sodium metasilicate of agent, 0.1g silicon based antifoam agents and 1g are dissolved in 95.8 g deionized waters（I.e.：In the additive prepared, institute
The weight percentage for stating polyalcohol is 2%, and the weight percentage of the polyvinyl alcohol is 1%, anion surfactant weight
It is 0.1% to measure percentage composition, and silicon based antifoam agent weight percentage is 0.1% and sodium metasilicate weight percentage is 1%）；
2）Prepare alkaline Woolen-making liquid：Under stirring, the deionized water of 2500g sodium hydroxides and 100L is uniformly mixed, and
The above-mentioned additives of 1000ml are added in afterwards, are stirred evenly；
3）Making herbs into wool：Buddha's warrior attendant wire cutting monocrystalline silicon piece is submerged, making herbs into wool is carried out in above-mentioned alkali Woolen-making liquid, making herbs into wool temperature is 82 DEG C, making herbs into wool
Time is 1000s.
Embodiment 2
A kind of etching method of monocrystalline silicon piece of offer in the embodiment of the present invention, takes following processing step：
1）Additive preparation：Under stirring, by 5.0g polyalcohols, 0.5g polyvinyl alcohol, 0.05g anion surface actives
The sodium metasilicate of agent, 0.05g silicon based antifoam agents and 3.0g are dissolved in 91.4 g deionized waters（I.e.：In the additive prepared,
The weight percentage of the polyalcohol is 5%, and the weight percentage of the polyvinyl alcohol is 0.5%, anion surface active
Agent weight percentage is 0.05%, and silicon based antifoam agent weight percentage is 0.05% and sodium metasilicate weight percentage is 3%）；
2）Prepare alkaline Woolen-making liquid：Under stirring, the deionized water of 2500g sodium hydroxides and 100 L is uniformly mixed, and
The above-mentioned additives of 1000ml are added in afterwards, are stirred evenly；
3）Making herbs into wool：Buddha's warrior attendant wire cutting monocrystalline silicon piece is submerged, making herbs into wool is carried out in above-mentioned alkali Woolen-making liquid, making herbs into wool temperature is 82 DEG C, making herbs into wool
Time is 1200s.
Embodiment 3
A kind of etching method of monocrystalline silicon piece in the embodiment of the present invention is provided, takes following processing step：
1）Additive preparation：Under stirring, by 3.0g polyalcohols, 1.5g polyvinyl alcohol, 0.1g anion surface actives
The sodium metasilicate of agent, 0.1g silicon based antifoam agents and 2.0g are dissolved in 93.3 g deionized waters（I.e.：In the additive prepared,
The weight percentage of the polyalcohol is 3%, and the weight percentage of the polyvinyl alcohol is 1.5%, anion surface active
Agent weight percentage is 0.1%, and silicon based antifoam agent weight percentage is 0.1% and sodium metasilicate weight percentage is 2%）；
2）Prepare alkaline Woolen-making liquid：Under stirring, the deionized water of 2500g sodium hydroxides and 100 L is uniformly mixed, and
The above-mentioned additives of 1000ml are added in afterwards, are stirred evenly；
3）Making herbs into wool：Buddha's warrior attendant wire cutting monocrystalline silicon piece is submerged, making herbs into wool is carried out in above-mentioned alkali Woolen-making liquid, making herbs into wool temperature is 82 DEG C, making herbs into wool
Time is 1200s.
Contrast on effect：Scanning electron microscope (SEM) photograph after Fig. 1 Buddha's warrior attendant wire cutting monocrystalline silicon piece routine making herbs into wool.Fig. 2 Buddha's warrior attendant wire cuttings
Scanning electron microscope (SEM) photograph after monocrystalline silicon piece patent embodiment 3 of the present invention.Fig. 2 gives the silicon chip surface matte that the present embodiment 3 obtains
Stereoscan photograph, as we can see from the figure silicon chip surface form the pyramid of uniform fold, pyramid coverage rate is high, ruler
It is very little smaller, about 1-3 μm.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (6)
1. a kind of special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece, it is characterised in that：Including following component：Polyalcohol,
Polyvinyl alcohol, anion surfactant, water-soluble silicon based antifoam agent, sodium metasilicate and deionized water, the weight content of polyalcohol
For 0.5-5%, the weight content of polyvinyl alcohol is 0.2-2%, and surfactant weight content is 0.02-0.2%, water-soluble silicon substrate
Antifoaming agent weight content is 0.01-1%, and sodium metasilicate weight content is 0.5-5%, and surplus is deionized water.
2. the special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece according to claim 1, it is characterised in that：It is described more
First alcohol is pentaerythrite, xylitol or D-sorbite.
3. the special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece according to claim 1, it is characterised in that：It is described poly-
The alcoholysis degree of vinyl alcohol is 88% or 98%.
4. the special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece according to claim 1, it is characterised in that：Described the moon
Ionic surface active agent is sulfosalt surfactant, phosphate surfactant active or carboxylate surface active agent.
5. the special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece according to claim 1, it is characterised in that：On described
Application method of the additive in Buddha's warrior attendant wire cutting monocrystalline silicon wafer alkaline flocking technique is stated to include the following steps：
A) additive preparation：By polyalcohol, polyvinyl alcohol, anion surfactant, water-soluble silicon based antifoam agent, sodium metasilicate
It is dissolved in deionization, obtains additive；Wherein, the weight content of polyalcohol is 0.5-5%；The weight content of polyvinyl alcohol is
0.2-2%；Anion surfactant weight content is 0.02-0.2%；Silicon based antifoam agent weight content is 0.01-1%；Sodium metasilicate
Weight content is 0.5-5%；
B) with alkaline Woolen-making liquid：Sodium hydroxide or potassium hydroxide are dissolved in deionized water and obtain alkali mixed liquor, it then will step
It is rapid a) made from additive be added in the alkali mixed solution, obtain alkaline Woolen-making liquid；Wherein, sodium hydroxide or potassium hydroxide
Weight content is 0.5-3%；The weight content of additive is 0.5-5%；
C) making herbs into wool：Buddha's warrior attendant wire cutting monocrystalline silicon piece is submerged into the alkaline Woolen-making liquid that step b) obtained and carries out making herbs into wool.
6. the special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece according to claim 5, it is characterised in that：The step
It is rapid c) in, making herbs into wool temperature during making herbs into wool is 75-90 DEG C, and the making herbs into wool time is 300-1200s.
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| CN201711255218.1A CN108130598A (en) | 2017-12-03 | 2017-12-03 | The special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece and its application method |
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| CN201711255218.1A CN108130598A (en) | 2017-12-03 | 2017-12-03 | The special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece and its application method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109267154A (en) * | 2018-09-28 | 2019-01-25 | 横店集团东磁股份有限公司 | Buddha's warrior attendant wire cutting monocrystalline silicon surface etching method |
| CN110137079A (en) * | 2019-05-22 | 2019-08-16 | 苏州晶瑞化学股份有限公司 | Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent and the Wool-making agent containing the adjusting control agent |
| CN110846721A (en) * | 2019-10-12 | 2020-02-28 | 湖南理工学院 | Monocrystalline silicon texturing additive formula containing polyalcohol and PEG |
| CN113913188A (en) * | 2021-12-14 | 2022-01-11 | 绍兴拓邦电子科技有限公司 | Monocrystalline silicon texturing agent and preparation method of textured monocrystalline silicon |
| CN114316804A (en) * | 2021-12-15 | 2022-04-12 | 嘉兴市小辰光伏科技有限公司 | Additive for improving monocrystalline silicon alkali polishing appearance problem and polishing process thereof |
-
2017
- 2017-12-03 CN CN201711255218.1A patent/CN108130598A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109267154A (en) * | 2018-09-28 | 2019-01-25 | 横店集团东磁股份有限公司 | Buddha's warrior attendant wire cutting monocrystalline silicon surface etching method |
| CN110137079A (en) * | 2019-05-22 | 2019-08-16 | 苏州晶瑞化学股份有限公司 | Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent and the Wool-making agent containing the adjusting control agent |
| CN110846721A (en) * | 2019-10-12 | 2020-02-28 | 湖南理工学院 | Monocrystalline silicon texturing additive formula containing polyalcohol and PEG |
| CN113913188A (en) * | 2021-12-14 | 2022-01-11 | 绍兴拓邦电子科技有限公司 | Monocrystalline silicon texturing agent and preparation method of textured monocrystalline silicon |
| CN114316804A (en) * | 2021-12-15 | 2022-04-12 | 嘉兴市小辰光伏科技有限公司 | Additive for improving monocrystalline silicon alkali polishing appearance problem and polishing process thereof |
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