KR101468406B1 - Etching composition for texturing mono-crystalline silicon wafer of solar cell and texturing method using the same - Google Patents
Etching composition for texturing mono-crystalline silicon wafer of solar cell and texturing method using the same Download PDFInfo
- Publication number
- KR101468406B1 KR101468406B1 KR1020130069028A KR20130069028A KR101468406B1 KR 101468406 B1 KR101468406 B1 KR 101468406B1 KR 1020130069028 A KR1020130069028 A KR 1020130069028A KR 20130069028 A KR20130069028 A KR 20130069028A KR 101468406 B1 KR101468406 B1 KR 101468406B1
- Authority
- KR
- South Korea
- Prior art keywords
- glycol
- texturing
- acid
- silicon wafer
- alkyl
- Prior art date
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- 238000005530 etching Methods 0.000 title claims abstract description 87
- 239000000203 mixture Substances 0.000 title claims abstract description 84
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 22
- 150000001875 compounds Chemical class 0.000 claims abstract description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000010702 perfluoropolyether Chemical class 0.000 claims abstract description 18
- 239000004094 surface-active agent Substances 0.000 claims abstract description 17
- 150000002484 inorganic compounds Chemical class 0.000 claims abstract description 12
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 12
- 239000003021 water soluble solvent Substances 0.000 claims abstract description 11
- 229920006112 polar polymer Polymers 0.000 claims abstract description 9
- 150000001412 amines Chemical class 0.000 claims abstract description 4
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 3
- -1 phenyl- Chemical group 0.000 claims description 165
- 235000012431 wafers Nutrition 0.000 claims description 86
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 61
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 43
- 229920001451 polypropylene glycol Polymers 0.000 claims description 41
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 19
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 18
- 239000000194 fatty acid Substances 0.000 claims description 18
- 229930195729 fatty acid Natural products 0.000 claims description 18
- 229920001223 polyethylene glycol Polymers 0.000 claims description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 16
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 claims description 16
- 239000002202 Polyethylene glycol Substances 0.000 claims description 15
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 15
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 15
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 claims description 14
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 14
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 claims description 14
- 235000002639 sodium chloride Nutrition 0.000 claims description 13
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 claims description 12
- 150000004996 alkyl benzenes Chemical class 0.000 claims description 12
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 12
- 229910019142 PO4 Inorganic materials 0.000 claims description 10
- 235000021317 phosphate Nutrition 0.000 claims description 10
- 150000003839 salts Chemical class 0.000 claims description 10
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 claims description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 9
- 229920000858 Cyclodextrin Polymers 0.000 claims description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 150000005215 alkyl ethers Chemical class 0.000 claims description 9
- 235000019270 ammonium chloride Nutrition 0.000 claims description 9
- 239000000908 ammonium hydroxide Substances 0.000 claims description 9
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 claims description 9
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 125000005037 alkyl phenyl group Chemical group 0.000 claims description 8
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 claims description 8
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 claims description 7
- 239000004115 Sodium Silicate Substances 0.000 claims description 7
- 235000010323 ascorbic acid Nutrition 0.000 claims description 7
- 229960005070 ascorbic acid Drugs 0.000 claims description 7
- 239000011668 ascorbic acid Substances 0.000 claims description 7
- 229960003237 betaine Drugs 0.000 claims description 7
- 229940051250 hexylene glycol Drugs 0.000 claims description 7
- 229910052943 magnesium sulfate Inorganic materials 0.000 claims description 7
- 235000019341 magnesium sulphate Nutrition 0.000 claims description 7
- 229920001282 polysaccharide Polymers 0.000 claims description 7
- 239000005017 polysaccharide Substances 0.000 claims description 7
- 150000004804 polysaccharides Chemical class 0.000 claims description 7
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 7
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 claims description 6
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims description 6
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 6
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 claims description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 claims description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 6
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 6
- 125000005211 alkyl trimethyl ammonium group Chemical group 0.000 claims description 6
- YZXBAPSDXZZRGB-DOFZRALJSA-N arachidonic acid Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(O)=O YZXBAPSDXZZRGB-DOFZRALJSA-N 0.000 claims description 6
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 6
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 claims description 6
- 239000003093 cationic surfactant Substances 0.000 claims description 6
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 claims description 6
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 claims description 6
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 6
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 claims description 6
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 claims description 6
- 150000002148 esters Chemical class 0.000 claims description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical group CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 6
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- CKFGINPQOCXMAZ-UHFFFAOYSA-N methanediol Chemical compound OCO CKFGINPQOCXMAZ-UHFFFAOYSA-N 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- 239000002736 nonionic surfactant Substances 0.000 claims description 6
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 claims description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 6
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 6
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 6
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 6
- 229920001285 xanthan gum Polymers 0.000 claims description 6
- 239000000230 xanthan gum Substances 0.000 claims description 6
- 235000010493 xanthan gum Nutrition 0.000 claims description 6
- 229940082509 xanthan gum Drugs 0.000 claims description 6
- 229920000856 Amylose Polymers 0.000 claims description 5
- XBPCUCUWBYBCDP-UHFFFAOYSA-N Dicyclohexylamine Chemical compound C1CCCCC1NC1CCCCC1 XBPCUCUWBYBCDP-UHFFFAOYSA-N 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 239000003945 anionic surfactant Substances 0.000 claims description 5
- 235000015165 citric acid Nutrition 0.000 claims description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 5
- 150000002596 lactones Chemical class 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 5
- BTVWZWFKMIUSGS-UHFFFAOYSA-N 2-methylpropane-1,2-diol Chemical compound CC(C)(O)CO BTVWZWFKMIUSGS-UHFFFAOYSA-N 0.000 claims description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical group O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 4
- 229920001353 Dextrin Polymers 0.000 claims description 4
- 239000004375 Dextrin Substances 0.000 claims description 4
- 239000001856 Ethyl cellulose Substances 0.000 claims description 4
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 4
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 claims description 4
- 239000002280 amphoteric surfactant Substances 0.000 claims description 4
- 239000003849 aromatic solvent Substances 0.000 claims description 4
- 229920001400 block copolymer Polymers 0.000 claims description 4
- 235000011132 calcium sulphate Nutrition 0.000 claims description 4
- 229920002678 cellulose Polymers 0.000 claims description 4
- 239000001913 cellulose Substances 0.000 claims description 4
- 235000010980 cellulose Nutrition 0.000 claims description 4
- 235000019425 dextrin Nutrition 0.000 claims description 4
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 4
- 229920001249 ethyl cellulose Polymers 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 claims description 3
- KXJGSNRAQWDDJT-UHFFFAOYSA-N 1-acetyl-5-bromo-2h-indol-3-one Chemical compound BrC1=CC=C2N(C(=O)C)CC(=O)C2=C1 KXJGSNRAQWDDJT-UHFFFAOYSA-N 0.000 claims description 3
- VAXHNWJSQXUXMK-UHFFFAOYSA-N 1-carbazol-9-ylprop-2-en-1-one Chemical compound C1=CC=C2N(C(=O)C=C)C3=CC=CC=C3C2=C1 VAXHNWJSQXUXMK-UHFFFAOYSA-N 0.000 claims description 3
- DURRSEGFTCZKMK-UHFFFAOYSA-N 1-prop-2-enylpyrrolidin-2-one Chemical compound C=CCN1CCCC1=O DURRSEGFTCZKMK-UHFFFAOYSA-N 0.000 claims description 3
- HFZLSTDPRQSZCQ-UHFFFAOYSA-N 1-pyrrolidin-3-ylpyrrolidine Chemical compound C1CCCN1C1CNCC1 HFZLSTDPRQSZCQ-UHFFFAOYSA-N 0.000 claims description 3
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 claims description 3
- ZUAURMBNZUCEAF-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethanol Chemical compound OCCOCCOC1=CC=CC=C1 ZUAURMBNZUCEAF-UHFFFAOYSA-N 0.000 claims description 3
- UHOPWFKONJYLCF-UHFFFAOYSA-N 2-(2-sulfanylethyl)isoindole-1,3-dione Chemical compound C1=CC=C2C(=O)N(CCS)C(=O)C2=C1 UHOPWFKONJYLCF-UHFFFAOYSA-N 0.000 claims description 3
- GHYMZHDODSTPJO-UHFFFAOYSA-N 2-(dodecylazaniumyl)-2-methylpropanoate Chemical compound CCCCCCCCCCCCNC(C)(C)C(O)=O GHYMZHDODSTPJO-UHFFFAOYSA-N 0.000 claims description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- RWLALWYNXFYRGW-UHFFFAOYSA-N 2-Ethyl-1,3-hexanediol Chemical compound CCCC(O)C(CC)CO RWLALWYNXFYRGW-UHFFFAOYSA-N 0.000 claims description 3
- UDOJNGPPRYJMKR-UHFFFAOYSA-N 2-[2-[2-[2-[2-(2-hydroxypropoxy)propoxy]propoxy]propoxy]propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)COC(C)COC(C)COC(C)CO UDOJNGPPRYJMKR-UHFFFAOYSA-N 0.000 claims description 3
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims description 3
- CUZKCNWZBXLAJX-UHFFFAOYSA-N 2-phenylmethoxyethanol Chemical compound OCCOCC1=CC=CC=C1 CUZKCNWZBXLAJX-UHFFFAOYSA-N 0.000 claims description 3
- MXRGSJAOLKBZLU-UHFFFAOYSA-N 3-ethenylazepan-2-one Chemical compound C=CC1CCCCNC1=O MXRGSJAOLKBZLU-UHFFFAOYSA-N 0.000 claims description 3
- WSDOLNVCEVYCJQ-UHFFFAOYSA-N 3-methylbutane-1,3-diamine Chemical compound CC(C)(N)CCN WSDOLNVCEVYCJQ-UHFFFAOYSA-N 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 239000005711 Benzoic acid Substances 0.000 claims description 3
- CZNJCCVKDVCRKF-UHFFFAOYSA-N Benzyl sulfate Chemical compound OS(=O)(=O)OCC1=CC=CC=C1 CZNJCCVKDVCRKF-UHFFFAOYSA-N 0.000 claims description 3
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 claims description 3
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 claims description 3
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 claims description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 3
- 229920002134 Carboxymethyl cellulose Polymers 0.000 claims description 3
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 claims description 3
- 229920002307 Dextran Polymers 0.000 claims description 3
- BWLUMTFWVZZZND-UHFFFAOYSA-N Dibenzylamine Chemical compound C=1C=CC=CC=1CNCC1=CC=CC=C1 BWLUMTFWVZZZND-UHFFFAOYSA-N 0.000 claims description 3
- OIFBSDVPJOWBCH-UHFFFAOYSA-N Diethyl carbonate Chemical compound CCOC(=O)OCC OIFBSDVPJOWBCH-UHFFFAOYSA-N 0.000 claims description 3
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical compound [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 229920000896 Ethulose Polymers 0.000 claims description 3
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 3
- 229920002527 Glycogen Polymers 0.000 claims description 3
- 229920002907 Guar gum Polymers 0.000 claims description 3
- 229920001479 Hydroxyethyl methyl cellulose Polymers 0.000 claims description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 3
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 claims description 3
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Abstract
Description
본 발명은 태양전지 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물 및 이를 이용한 텍스쳐링 방법에 관한 것이며, 더욱 상세하게는, 태양전지용 단결정 실리콘 웨이퍼 표면에 미세하고 균일한 텍스쳐링을 에칭하여 태양광으로부터 받은 빛을 최대한 흡수하여 태양전지의 효율을 효과적으로 높일 수가 있는 태양전지 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물 및 이를 이용한 텍스쳐링 방법과, 그에 의해 얻어지는 태양전지용 단결정 실리콘 웨이퍼 및 이를 포함하는 태양전지용 셀 및 모듈 장치에 관한 것이다.The present invention relates to an etching composition for texturing a solar cell single crystal silicon wafer and a method of texturing using the same. More particularly, the present invention relates to a process for etching a fine and uniform texturing on the surface of a single crystal silicon wafer for a solar cell, The present invention relates to an etching composition for texturing a solar cell single crystal silicon wafer and a texturing method using the etching composition, and a single crystal silicon wafer for a solar cell and a solar cell and module device comprising the same.
최근 급속하게 성장하고 있는 친환경 에너지 기술분야에 있어서, 환경친화적인 차세대 에너지원으로서의 태양 에너지를 직접 전기에너지로 전환시키는 전기 소자로서의 태양전지는 가정용부터 발전소까지 광범위하게 적용되고 있다.BACKGROUND ART [0002] In the field of eco-friendly energy technology, which is rapidly growing in recent years, solar cells as an electric device for converting solar energy directly into electric energy as an environmentally friendly next generation energy source have been widely used from households to power plants.
태양광을 전기로 변환시키는 태양전지의 광변환효율은 빛의 세기와 파장 그리고 태양전지의 셀 두께와 실리콘 웨이퍼 표면의 텍스쳐(texture) 상태가 큰 영향을 미치는 것으로 알려 있으며, 이 중에서도 실리콘 웨이퍼 표면의 텍스쳐링 상태는 에너지 변환 효율에 있어 매우 중요한 한 요소이다.The photoconversion efficiency of a solar cell that converts sunlight into electricity is known to have a great influence on the intensity and wavelength of light, the cell thickness of the solar cell, and the texture state of the silicon wafer surface. Among these, The texturing state is a very important factor in energy conversion efficiency.
단결정 실리콘 웨이퍼의 경우 피라미드(pyramid) 구조를 형성하는 텍스쳐링(texturing) 에칭을 함으로써, 실리콘 웨이퍼 표면의 손상 제거는 물론, 표면의 광반사율(light reflection ratio)을 저감시킴으로써 에너지 효율을 증가시킬 수 있다.In the case of single crystal silicon wafers, by performing texturing etching that forms a pyramid structure, energy efficiency can be increased by reducing the light reflection ratio of the surface as well as damaging the surface of the silicon wafer.
단결정 실리콘 웨이퍼의 텍스쳐링은 이방성(anisotropic) 에칭에 의해 피라미드를 형성하며, 텍스쳐링 조성물의 구성, 농도, 온도 및 시간에 따라서 무작위로 형성되는 피라미드의 크기, 개수, 밀도 및, 균일성이 달라지게 된다.Texturing of monocrystalline silicon wafers forms pyramids by anisotropic etching and varies the size, number, density and uniformity of the randomly formed pyramids depending on the composition, concentration, temperature and time of the texturing composition.
텍스쳐링된 웨이퍼는 표면 내부로 입사된 빛을 웨이퍼 내부 방향의 다양한 각도로 반사시킴으로써 빛의 포획(trapping) 효과를 증가시키고 반사율을 낮추어, 최종적으로 태양전지의 광에너지 효율을 크게 증가시키게 된다.The textured wafer reflects the light incident on the inside of the surface at various angles in the direction of the wafer interior, thereby increasing the trapping effect of light and lowering the reflectance, thereby greatly increasing the light energy efficiency of the solar cell.
단결정 실리콘 웨이퍼를 미세 피라미드 구조로 텍스쳐링하는 방법으로, 한국특허출원공개 제10-2012-0059378호(2012.06.08. 공개)에는 비이온, 음이온, 양이온 및 양쪽이온성 계면활성제 또는 이를 혼합한 텍스쳐링 조성물로 이루어진 실리콘 텍스쳐링 에칭액을 개시(開示)하고 있다. 그러나, 이 에칭액은 피라미드의 크기형성과 균일도에 있어 충분히 만족스러운 것은 못되어 광반사율이 비교적 높아 광에너지 효율 저하의 문제가 있다.Korean Patent Application Laid-Open No. 10-2012-0059378 (published on Jun. 6, 2012) discloses a method of texturing single crystal silicon wafers with a fine pyramid structure by using a nonionic, anionic, cationic and amphoteric surfactant or a texturing composition A silicon texturing etchant is disclosed. However, this etchant is not sufficiently satisfactory in size formation and uniformity of the pyramid, and the light reflectance is relatively high, resulting in a problem of deterioration of light energy efficiency.
또한 미국특허 제6,451,218호에는 알칼리 시약, IPA 및 알칼리 에틸렌 글리콜을 포함하는 대안적인 텍스쳐링 용액이 개시되어 있다. 이 특허문헌은 상기 용액이 우수한 텍스쳐링 재생성을 제공하고, 피라미드 크기가 조절 가능함과 아울러, 통상적인 IPA(이소프로판올) 용액에 비해 IPA의 증발율이 크지 않아서, 텍스쳐링 중 용액을 교체하기 위한 빈도를 감소시키는 것으로 기재하고 있다. 그러나, 텍스쳐링 용액이 텍스쳐링 재생성을 제공하고 용액 성분들의 증발을 감소시킬 수는 있을지라도, 개선된 텍스쳐링의 균일성, 재성성, 성분들의 감소된 증발성 및 반사율의 개선된 성능을 지닌 텍스쳐링 용액이 여전히 요구되고 있다.Also, U.S. Patent No. 6,451,218 discloses alternative texturing solutions that include alkali reagents, IPA, and alkali ethylene glycols. The patent teaches that the solution provides good texturing regeneration, pyramidal size control, and a low evaporation rate of IPA compared to conventional IPA (isopropanol) solutions, thus reducing the frequency of replacing solutions during texturing . However, even though the texturing solution may provide texturing regeneration and reduce evaporation of solution components, the texturing solution with improved texturing uniformity, regrowth, reduced evaporability of components and improved performance of reflectance still remains Is required.
또한 한국특허출원공개 제10-2011-0033096호(2011.03.30. 공개)에는 170 g/mole 이상의 분자량 및 75℃ 이상의 인화점을 갖는 알콕실화 글리콜, 그 모노-메틸 에테르 및 모노-메틸 에테르 아세테이트 유도체로부터 선택되는 하나 이상의 화합물, 및 하나 이상의 알칼리 화합물을 포함하는 수성 용액을 반도체 기판에 적용하여 웨이퍼를 텍스쳐링하는 에칭액이 개시되어 있다. 그러나, 이 에칭액 또한 피라미드의 크기 및 균일도의 조절이 여전히 매우 어렵고, 웨이퍼 표면상태의 불량이 많이 나타날 우려가 있다는 문제점이 있다.Korean Patent Application Publication No. 10-2011-0033096 (published on Mar. 30, 2011) discloses an alkoxylated glycol having a molecular weight of at least 170 g / mole and a flash point of 75 캜 or higher, a mono-methyl ether and a mono-methyl ether acetate derivative thereof There is disclosed an etchant for texturing a wafer by applying an aqueous solution containing at least one compound selected and at least one alkaline compound to a semiconductor substrate. However, it is still difficult to control the size and uniformity of the pyramid in this etchant, and there is a concern that the surface state of the wafer may be poor.
따라서 본 발명의 첫 번째 목적은 단결정 실리콘 웨이퍼 표면의 빛 흡수율을 높여 태양전지의 효율을 효과적으로 제고할 수 있도록 단결정 실리콘 웨이퍼 표면에 균일하게 제어된 미세 피라미드 구조를 효과적으로 형성할 수가 있는 태양전지 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물을 제공하기 위한 것이다.Therefore, it is a first object of the present invention to provide a solar cell monocrystalline silicon wafer capable of efficiently forming a fine pyramid structure uniformly controlled on the surface of a single crystal silicon wafer in order to increase the light absorption rate of the surface of the single crystal silicon wafer, To provide an etching composition for texturing.
또한 본 발명의 두 번째 목적은 상기 텍스쳐링용 에칭 조성물을 이용한 태양전지 단결정 실리콘 웨이퍼의 텍스쳐링 방법을 제공하기 위한 것이다.A second object of the present invention is to provide a method of texturing a solar cell single crystal silicon wafer using the etching composition for texturing.
또한 본 발명의 세 번째 목적은 상기 텍스쳐링용 에칭 조성물에 의해 균일하고 미세한 크기의 피라미드가 형성된 태양전지용 단결정 실리콘 웨이퍼를 제공하기 위한 것이다.A third object of the present invention is to provide a monocrystalline silicon wafer for a solar cell in which a pyramid of uniform and fine size is formed by the etching composition for texturing.
또한, 본 발명의 네 번째 목적은 상기 균일하고 미세한 크기의 피라미드 패턴이 형성된 단결정 실리콘 웨이퍼를 포함하는 태양전지용 셀 및 모듈 장치를 제공하기 위한 것이다.A fourth object of the present invention is to provide a solar cell module and a module device including the monocrystalline silicon wafer having the pyramid pattern of uniform and fine size.
본 발명의 첫 번째 목적을 원활히 달성하기 위한 본 발명의 바람직한 일 양태(樣態: aspect)에 따르면, 조성물 전중량 기준으로, 하기 화학식 1의 극성 고분자 화합물 10-6~10중량% , 하기 화학식 2의 실리콘 화합물 10-5~10중량%, 하기 화학식 3의 과불소폴리에테르 화합물 10-5~10중량%, 계면활성제 10-6~10중량% 및, 잔부(balance) 물로 구성되는 태양전지 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물이 제공된다.In order to accomplish the first object of the present invention, according to a preferred aspect of the present invention, there is provided a composition comprising 10 -6 to 10% by weight of a polar polymer compound represented by the following formula (1) silicon compound 10 -5 to 10% by weight, the formula 3 of the perfluoropolyether compound 10 -5 to 10% by weight of surfactant 10 -6 to 10% by weight and, the balance (balance) single crystal silicon solar cell that is composed of water An etching composition for texturing a wafer is provided.
(화학식 1)(Formula 1)
(상기 화학식 1에서, R1 및 R3는 각각 독립적으로 수소(H-) 또는 메틸(CH3-)이고, R2 및 R4는 각각 독립적으로 수소(H-), 메틸(CH3-), 히드록실(OH-), 카복실(COO-), 아미드(amide-), 페닐(phenyl-), 히드록시페닐(hydroxy phenyl-), 피롤리도닐(pyrrolidonyl-), 카프로락타닐(caprolactanyl-), 디메틸아미노프로필아미드(dimethyl aminopropyl amide-), 히드록시에틸카복실(hydoxyethyl carboxyl-), 폴리에틸렌글리콜(polyethylene glycol), 또는 폴리프로필렌글리콜(polypropylene glycol)이며, n과 m은 각각 독립적으로 1보다 큰 정수이고, 10≤n+m≤1,000 이다.)Wherein R 1 and R 3 are each independently hydrogen (H-) or methyl (CH 3 -), R 2 and R 4 are each independently hydrogen (H-), methyl (CH 3 -), , Hydroxy (OH-), carboxyl (COO-), amide-, phenyl-, hydroxyphenyl-, pyrrolidonyl-, caprolactanyl- ), Dimethyl aminopropyl amide-, hydoxyethyl carboxyl-, polyethylene glycol, or polypropylene glycol, n and m are each independently greater than 1 Lt; = n + m < / = 1,000).
(화학식 2)(2)
(상기 화학식 2에서, R1은 메틸(CH3-), 카복실(carboxyl-), 히드록실(-OH), 폴리에틸렌글리콜(polyethylene glycol), 또는 폴리프로필렌글리콜(polypropylene glycol)이고, R2는 메틸(CH3-), 페닐(phenyl-), 폴리에틸렌글리콜(polyethylene glycol), 또는 폴리프로필렌글리콜(polypropylene glycol)이며, n과 m은 각각 독립적으로 0 보다 큰 정수이고, 2≤n+m≤10 이다.)Wherein R 1 is methyl (CH 3 -), carboxyl-, hydroxyl (-OH), polyethylene glycol, or polypropylene glycol, and R 2 is methyl (CH 3 -), phenyl-, polyethylene glycol, or polypropylene glycol, n and m are each independently an integer greater than 0, and 2? N + m? 10 .)
(화학식 3)(Formula 3)
(상기 화학식 3에서, R은 메틸(CH3-), 아미노(amino-), 에폭시(epoxy-), 알리시클릭에폭시(alicyclic epoxy-), 폴리에테르(polyether-), 카복실(carboxyl-), 페닐(phenyl-), 히드록실(-OH), 폴리에틸렌글리콜(polyethylene glycol), 또는 폴리프로필렌글리콜(polypropylene glycol)이며, n과 m은 각각 독립적으로 0 보다 큰 정수이고, 2≤n+m≤10 이다.)In the above formula (3), R is at least one selected from the group consisting of methyl (CH 3 -), amino-, epoxy-, alicyclic epoxy-, polyether-, carboxyl-, Wherein n and m are each independently an integer greater than 0, and 2? N + m? 10, to be.)
여기서, 상기한 계면활성제는 비이온성 계면활성제, 음이온성 계면활성제, 양이온성 계면활성제, 불소계 계면활성제, 또는 이들의 임의의 혼합물일 수 있다.Here, the above-mentioned surfactant may be a nonionic surfactant, an anionic surfactant, a cationic surfactant, a fluorinated surfactant, or any mixture thereof.
구체적으로, 상기한 비이온성 계면활성제는 알킬폴리 글루코사이드, 폴리옥시알킬렌 알킬에테르, 폴리옥시알킬렌 알킬페닐에테르, 폴리옥시프로필렌 알킬에테르, 폴리옥시프로필렌 알킬페닐에테르, 폴리옥시에틸렌/폴리옥시프로필렌 공중합 알킬에테르, 폴리옥시에틸렌/폴리옥시프로필렌 공중합 알킬페닐에테르, 폴리옥시에틸렌/폴리옥시프로필렌 블록공중합체, 폴리에틸렌글리콜 지방산에스테르, 폴리옥시프로필렌글리콜 지방산에스테르, 폴리에틸렌/폴리옥시프로필렌글리콜 공중합 지방산에스테르, 폴리옥시에틸렌 솔비탄 지방산 에스테르, 폴리옥시프로필렌 솔비탄 지방산 에스테르, 또는 폴리옥시에틸렌/폴리옥시프로필렌 공중합 솔비탄 지방산 에스테르이고; 상기한 음이온성 계면활성제가 알킬에테르설페이트, 알킬설페이트, 알킬벤젠설포네이트, 알킬벤질설페이트, 이차알칸설포네이트, 알파올레핀 설포네이트, 알킬설포숙시네이트, 알킬에테르포스페이트, 알킬포스페이트, 알킬벤젠포스페이트, 또는 이들의 염이며; 상기한 양쪽성 계면활성제가 알킬베타인, 알킬글리신 베타인, 디메틸도데실글리신 베타인, 또는 코카미도프로필베타인이며; 상기한 양이온성 계면활성제가 알킬트리메틸암모늄클로라이드, 알킬벤젠트리메틸암모늄클로라이드, 알킬트리메틸암모늄히드록시드, 알킬벤젠트리메틸암모늄히드록시드, 알킬트리에틸암모늄클로라이드, 알킬벤젠트리에틸암모늄클로라이드, 알킬트리에틸암모늄히드록시드, 또는 알킬벤젠트리에틸암모늄히드록시드이고; 상기한 불소계 계면활성제가 과불소알킬 카르복시산염, 과불소알킬 술폰산염, 과불소알킬 황산염, 과불소알킬 인산염, 과불소알킬 아민염, 과불소알킬 4급암모늄염, 과불소알킬 카르복시베타인, 과불소알킬 술포베타인 과불소알킬 폴리옥시에틴렌, 과불소폴리에테르(perfluoropolyether) 폴리옥시에틸렌, 또는 과불소폴리에테르(perfluoropolyether) 폴리옥시프로필렌)이다.Specifically, the nonionic surfactant is selected from the group consisting of alkyl polyglucoside, polyoxyalkylene alkyl ether, polyoxyalkylene alkyl phenyl ether, polyoxypropylene alkyl ether, polyoxypropylene alkyl phenyl ether, polyoxyethylene / polyoxypropylene copolymer Alkyl ether, polyoxyethylene / polyoxypropylene copolymerized alkyl phenyl ether, polyoxyethylene / polyoxypropylene block copolymer, polyethylene glycol fatty acid ester, polyoxypropylene glycol fatty acid ester, polyethylene / polyoxypropylene glycol copolymer fatty acid ester, Ethylene sorbitan fatty acid esters, polyoxypropylene sorbitan fatty acid esters, or polyoxyethylene / polyoxypropylene copolymerized sorbitan fatty acid esters; Wherein the anionic surfactant is selected from the group consisting of alkyl ether sulfates, alkyl sulfates, alkylbenzenesulfonates, alkylbenzyl sulfates, secondary alkanesulfonates, alpha olefin sulfonates, alkyl sulfosuccinates, alkyl ether phosphates, alkyl phosphates, alkylbenzene phosphates, Or a salt thereof; Wherein said amphoteric surfactant is alkyl betaine, alkyl glycine betaine, dimethyl dodecyl glycine betaine, or cocamidopropyl betaine; Wherein said cationic surfactant is selected from the group consisting of alkyl trimethyl ammonium chloride, alkyl benzene trimethyl ammonium chloride, alkyl trimethyl ammonium hydroxide, alkyl benzene trimethyl ammonium hydroxide, alkyl triethyl ammonium chloride, alkyl benzene triethyl ammonium chloride, A hydroxide, or an alkylbenzenetriethylammonium hydroxide; The fluorosurfactant may be at least one selected from the group consisting of perfluoroalkylcarboxylate, perfluoroalkylsulfonate, perfluoroalkylsulfate, perfluoroalkylphosphate, perfluoroalkylamine salt, perfluoroalkyl quaternary ammonium salt, perfluoroalkylcarboxybetaine, Perfluoropolyether polyoxyethylene, or perfluoropolyether polyoxypropylene). The term " perfluoropolyether "
본 발명에 있어서, 상기한 텍스쳐링용 에칭 조성물은 선택적으로 당 화합물을 10-3~10중량% 더욱 포함할 수 있다.In the present invention, the etching composition for texturing may further include 10 -3 to 10 wt% of the saccharide compound.
구체적으로 상기한 당 화합물은 글루코스, 말토스, 만노스, 갈락토스, 플럭토스, 슈클로스, 아밀로스, 폴리사카라이드, 리그닌, 렉틴, 잔탄검, 구아검, 셀룰로오스, 디메틸아미노에틸셀룰로오스, 디에틸아미노에틸셀룰로오스, 에틸히드록시에틸셀룰로오스, 메틸히드록시에틸셀룰로오스, 4-아미노벤질셀룰로오스, 트리에틸아미노에틸셀룰로오스, 시아노에틸셀룰로오스, 에틸셀룰로오스, 메틸셀룰로오스, 카르복시메틸셀룰로오스, 카르복시에틸셀룰로오스, 히드록시에틸셀룰로오스, 히드록시프로필셀룰로오스, 알긴산, 아밀로오스, 아밀로펙틴, 펙틴, 스타치, 덱스트린, α-시클로덱스트린, β-시클로덱스트린, γ-시클로덱스트린, 히드록시프로필-β-시클로덱스트린, 메틸-β-시클로덱스트린, 덱스트란, 덱스트란설페이트나트륨, 사포닌, 글리코겐, 자이모산, 렌티난, 시조피난 및 이들의 금속염, 또는 이들의 임의의 혼합물일 수 있다.Specifically, the above-mentioned saccharide compounds may be used in combination with glucose, maltose, mannose, galactose, flutose, sucrose, amylose, polysaccharide, lignin, lectin, xanthan gum, guar gum, cellulose, dimethylaminoethylcellulose, , Ethylhydroxyethylcellulose, methylhydroxyethylcellulose, 4-aminobenzylcellulose, triethylaminoethylcellulose, cyanoethylcellulose, ethylcellulose, methylcellulose, carboxymethylcellulose, carboxyethylcellulose, hydroxyethylcellulose, Cyclodextrin, hydroxypropyl-beta-cyclodextrin, methyl- beta -cyclodextrin, dextran, hydroxypropylcellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, alpha -cyclodextrin, beta -cyclodextrin, , Sodium dextran sulfate, saponin, glycogen, zymo , Lentinan, it may be a progenitor evacuation and metal salts thereof, or any mixture thereof.
본 발명에 있어서, 상기한 텍스쳐링용 에칭 조성물은 선택적으로 카복실 화합물을 10-5~10중량% 더욱 포함할 수 있다.In the present invention, the etching composition for texturing may further include 10 -5 to 10 wt% of a carboxyl compound.
구체적으로 상기한 카복실 화합물은 아미노산, 아스코빅산, 레티놀산, 초산, 프로피온산, 부틸산, 카프릴산, 카프릭산, 옥살산, 말론산, 말레산, 아디프산, 프탈산, 텔레프탈산, 말산, 구연산, 타르타르산, 젖산, 폼산, 벤조산, 라우릴산, 미리스트산, 스테아린산, 리놀렌산, 아라키돈산 및 이들의 염, 또는 이들의 임의의 혼합물일 수 있다.Specifically, the above-mentioned carboxyl compound may be an amino acid, ascorbic acid, retinoic acid, acetic acid, propionic acid, butyric acid, caprylic acid, capric acid, oxalic acid, malonic acid, maleic acid, adipic acid, phthalic acid, terephthalic acid, , Tartaric acid, lactic acid, formic acid, benzoic acid, lauric acid, myristic acid, stearic acid, linolenic acid, arachidonic acid and salts thereof, or any mixture thereof.
또한 본 발명에 있어서 상기한 텍스쳐링용 에칭 조성물은 아민 화합물을 10-5~10중량% 더욱 포함할 수 있다.In the present invention, the etching composition for texturing may further contain 10 -5 to 10% by weight of an amine compound.
구체적으로 상기한 아민 화합물은 모노에탄올아민, 디에탄올아민, 트리에탄올아민, 모노프로필아민, 디프로필아민, 모노이소프로필아민, 디이소프로필아민, 에틸렌디아민, 히드록시아민, N-메틸히드록실아민, N,N-디메틸히드록시아민, 2-에틸아미노에탄올, 2-(2-아미노에틸아미노)에탄올, 사이클로헥실아민, 디사이클로핵실아민, 벤질아민, 디벤질아민, N-메틸벤질아민, 디메틸벤질아민, 피롤, 피롤리딘, 피리딘, 피페리딘, 피페리돈, 피롤리돈, 메틸피롤리돈, 비닐피롤리돈, 비닐메틸피롤리돈, 카프로락탐, 비닐카프로락탐, 이미다졸리디논, 테트라히드로퓨란, 아닐린, 또는 이들의 임의의 혼합물일 수 있다.Specifically, the amine compound may be selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, monopropylamine, dipropylamine, monoisopropylamine, diisopropylamine, ethylenediamine, hydroxyamine, N-methylhydroxylamine, N, N-dimethylhydroxyamine, 2-ethylaminoethanol, 2- (2-aminoethylamino) ethanol, cyclohexylamine, dicyclohexylamine, benzylamine, dibenzylamine, N-methylbenzylamine, dimethylbenzyl And examples thereof include amines such as amine, pyrrole, pyrrolidine, pyridine, piperidine, piperidone, pyrrolidone, methylpyrrolidone, vinylpyrrolidone, vinylmethylpyrrolidone, caprolactam, vinylcaprolactam, imidazolidinone, tetra Tetrahydrofuran, aniline, or any mixture thereof.
또한 본 발명에 있어서 상기한 텍스쳐링용 에칭 조성물은 수용성 용매를 10-3~10중량% 더욱 포함할 수도 있다.In the present invention, the etching composition for texturing may further contain 10 -3 to 10% by weight of a water-soluble solvent.
구체적으로 상기한 수용성 용매는 알코올, 글리콜, 카보네이트, 에스테르, 락톤, 카바졸, 방향족 용매, 또는 이들의 임의의 혼합 용매일 수 있다.Specifically, the water-soluble solvent may be an alcohol, a glycol, a carbonate, an ester, a lactone, a carbazole, an aromatic solvent, or any mixture thereof.
더욱 구체적으로는, 상기한 알코올은 부탄올, 이소부탄올, t-부탄올, 핵산올, 이소핵산올, 2-에틸헥산올, 부탄디올, 펜탄디올, 헥산디올, 시클로펜탄디올, 시클로헥산디올, 시클로헥산트리올, 또는 시클로헵탄트리올이고; 상기한 글리콜은 메틸렌글리콜, 에틸렌글리콜, 프로필렌글리콜, 이소프로필렌글리콜, 부틸렌글리콜, 이소부틸렌글리콜, 헥실렌글리콜, 에틸헥실렌글리콜, 메틸렌디글리콜, 에틸렌디글리콜, 프로필렌디글리콜, 이소프로필렌디글리콜, 부틸렌디글리콜, 이소부틸렌디글리콜, 헥실렌디글리콜, 에틸헥실렌디글리콜, 메틸렌트리글리콜, 에틸렌트리글리콜, 프로필렌트리글리콜, 이소프로필렌트리글리콜, 부틸렌트리글리콜, 이소부틸렌트리글리콜, 헥실렌트리글리콜, 에틸헥실렌트리글리콜, 에틸렌글리콜, 디에틸렌글리콜, 트리에틸렌글리콜, 테트라에틸렌글리콜, 펜타에틸렌글리콜, 헥사에틸렌글리콜, 폴리에틸렌글리콜, 프로필렌글리콜, 디프로필렌글리콜, 트리프로필렌글리콜, 테트라프로필렌글리콜, 펜타프로필렌글리콜, 헥사프로필렌글리콜, 또는 폴리프로필렌글리콜이며; 상기한 카보네이트는 디메틸 카보네이트, 메틸에틸 카보네이트, 디에틸 카보네이트, 에틸렌 카보네이트, 또는 프로필렌 카보네이트이고; 상기한 에스테르는 에틸 락테이트, 프로필 락테이트, 부틸 락테이트, 에틸 프로피온에이트, 프로필 프로피온에이트, 부틸 프로피온에트, 또는 프로필렌글라이콜메틸에테르 아세테이트이며; 상기한 락톤이 부티로락톤 또는 카프로락톤이고; 상기한 카바졸이 N-비닐카바졸 또는 N-아크릴로일카바졸이며; 상기한 방향족 용매가 벤질 글리콜, 벤질 디글리콜, 벤질 트리글리콜, 벤질 테트라글리콜, 페닐 글리콜, 페닐 디글리콜, 페닐 트리글리콜, 페닐 테트라글리콜, 벤젠설포네이트, 또는 벤질설페이트이다.More specifically, the alcohol is selected from the group consisting of butanol, isobutanol, t-butanol, nucleic acid, iso-nucleic acid, 2-ethylhexanol, butanediol, pentanediol, hexanediol, cyclopentanediol, cyclohexanediol, Or cycloheptanetriol; The glycol may be at least one selected from the group consisting of methylene glycol, ethylene glycol, propylene glycol, isopropylene glycol, butylene glycol, isobutylene glycol, hexylene glycol, ethylhexylene glycol, methylene diglycol, ethylene diglycol, Butylene glycol, ethylene glycol, propylene glycol, butylene glycol, ethylene glycol, propylene glycol, glycol, butylene diol glycol, isobutylene di glycol, hexylene diglycol, ethylhexylene diglycol, methylene tri glycol, ethylene triglycol, Ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, pentaethylene glycol, hexaethylene glycol, polyethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, tetrapropylene Glycol, pentapropylene glycol, hexapropylene glycol, or Lee and propylene glycol; The carbonate may be dimethyl carbonate, methyl ethyl carbonate, diethyl carbonate, ethylene carbonate, or propylene carbonate; The ester is ethyl lactate, propyl lactate, butyl lactate, ethyl propionate, propyl propionate, butyl propionate, or propylene glycol methyl ether acetate; Said lactone is butyrolactone or caprolactone; Wherein said carbazole is N-vinylcarbazole or N-acryloylcarbazole; The aromatic solvent is benzyl glycol, benzyldiglycol, benzyltriglycol, benzyltetraglycol, phenylglycol, phenyldiglycol, phenyltriglycol, phenyltetraglycol, benzenesulfonate, or benzylsulfate.
또한 본 발명에 있어서 상기한 텍스쳐링용 에칭 조성물은 무기 화합물을 10-5~10중량% 더욱 포함할 수도 있다.In the present invention, the etching composition for texturing may further contain 10 -5 to 10% by weight of an inorganic compound.
구체적으로 상기한 무기 화합물은 규산나트륨, 규산칼륨, 규산리튬, 규산산화물, 테트라소듐실리케이트, 헥사소듐실리케이트, 디소듐실리케이트, 실리카, 소듐카보네이트, 소듐바이카보네이트, 칼슘카보네이트, 소듐클로라이드, 칼슘클로라이드, 포타슘클로라이트, 마그네슘클로라이드, 소듐플로라이드, 칼슘플로라이드, 포타슘플로라이드, 소듐포스페이트, 포타슘포스페이트, 테스트라포타슘피로포스페이트, 소듐테스라피로포스페이트, 소듐설페이트, 칼슘설페이트, 마그네슘설페이트, 또는 이들의 임의의 혼합물일 수 있다.Specifically, the inorganic compound is selected from the group consisting of sodium silicate, potassium silicate, lithium silicate, silicate oxide, tetrasodium silicate, hexasodium silicate, disodium silicate, silica, sodium carbonate, sodium bicarbonate, calcium carbonate, sodium chloride, calcium chloride, Sodium sulfite, magnesium sulfate, magnesium sulfate, magnesium sulfate, magnesium sulfate, magnesium sulfate, calcium sulfate, calcium sulfate, magnesium chloride, sodium fluoride, calcium fluoride, potassium fluoride, sodium phosphate, potassium phosphate, testapotassium pyrophosphate, sodium testafiophosphate, Lt; / RTI >
본 발명의 두 번째 목적을 원활히 달성하기 위한 본 발명의 바람직한 일 양태에 따르면, 이온 교환수 100부피부에, 수산화칼륨, 수산화나트륨, 수산화암모늄, 테트라히드록시메틸암모늄 및, 테트라히드록시에틸암모늄으로 이루어지는 군으로부터 선택되는 적어도 1종의 알칼리 화합물 0.1 내지 20부피부와, 전술한 텍스쳐링용 에칭 조성물 0.1 내지 20부피부를 혼합하는 단계; 및 상기 혼합 용액에 태양전지용 단결정 실리콘 웨이퍼를 70℃ 내지 90℃의 온도에서 1분 내지 30분 동안 침적, 분무 또는 침적 및 분무하여 태양전지용 단결정 실리콘 웨이퍼를 텍스쳐링하는 단계로 구성되는 태양전지 단결정 실리콘 웨이퍼의 텍스쳐링 방법이 제공된다.In order to achieve the second object of the present invention, there is provided a process for the preparation of a cosmetic composition comprising 100 parts of ion-exchanged water in the presence of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium and tetrahydroxyethylammonium 0.1 to 20 parts by weight of an alkaline compound selected from the group consisting of the following: 0.1 to 20 parts by weight of the skin and 0.1 to 20 parts by weight of the above-mentioned etching composition for texturing; And texturing a single crystal silicon wafer for a solar cell by immersing, spraying or dipping and spraying the single crystal silicon wafer for solar cell at a temperature of 70 to 90 DEG C for 1 to 30 minutes in the mixed solution, Is provided.
또한 본 발명의 세 번째 목적을 원활히 달성하기 위한 본 발명의 바람직한 일 양태에 따르면, 전술한 텍스쳐링 방법으로 에칭하여 0.1㎛ 내지 10㎛ 크기의 균질한 피라미드가 적어도 일 표면에 형성되어 있는 태양전지용 단결정 실리콘 웨이퍼가 제공된다.According to another aspect of the present invention, there is provided a method of fabricating a solar cell, comprising: forming a silicon single crystal silicon substrate having a uniform pyramid having a size of 0.1 탆 to 10 탆 on at least one surface thereof, A wafer is provided.
마지막으로 본 발명의 네 번째 목적을 원활히 달성하기 위한 본 발명의 바람직한 일 양태에 따르면, 전술한 단결정 실리콘 웨이퍼를 포함하는 태양전지용 셀 및/또는 모듈장치가 제공된다.Finally, according to a preferred embodiment of the present invention for attaining the fourth object of the present invention, there is provided a solar cell and / or a module device including the aforementioned single crystal silicon wafer.
본 발명에 따른 태양전지 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물은 단결정 실리콘 웨이퍼 표면의 빛 흡수율을 높여 태양전지의 효율을 효과적으로 제고할 수 있도록 단결정 실리콘 웨이퍼 표면에 균일하게 제어된 미세 피라미드 구조를 효과적으로 형성할 수가 있으며, 상기 텍스쳐링용 에칭 조성물을 이용한 텍스쳐링 방법에 의하면 태양전지를 구성하는 단결정 실리콘 웨이퍼 표면에 균일하게 제어된 미세 피라미드 구조를 보다 효과적으로 형성함으로써 광 에너지를 보다 효율적으로 전기 에너지로 변환할 수가 있는 태양전지용 단결정 실리콘 웨이퍼와, 이를 포함하는 태양전지용 셀 및 모듈 장치를 얻을 수가 있다.The etching composition for texturing a solar cell single crystal silicon wafer according to the present invention effectively forms a fine pyramid structure uniformly controlled on the surface of a single crystal silicon wafer in order to increase the light absorption rate of the surface of the single crystal silicon wafer and effectively improve the efficiency of the solar cell According to the texturing method using the etching composition for texturing, a fine pyramid structure uniformly controlled on the surface of a single crystal silicon wafer constituting a solar cell can be more effectively formed, thereby enabling the conversion of light energy into electric energy more efficiently A single crystal silicon wafer for a battery, a solar cell and a module device including the single crystal silicon wafer can be obtained.
도 1은 본 발명에 따른 실시예 10의 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물로 텍스쳐링된 단결정 실리콘 웨이퍼의 표면을 나타내는 주사전자 현미경(SEM) 사진이다.
도 2는 본 발명에 따른 실시예 10의 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물로 텍스쳐링된 단결정 실리콘 웨이퍼의 측면을 나타내는 SEM 사진이다.1 is a scanning electron microscope (SEM) photograph showing the surface of a single crystal silicon wafer textured with an etching composition for texturing a single crystal silicon wafer of Example 10 according to the present invention.
2 is a SEM photograph showing a side surface of a single crystal silicon wafer textured with an etching composition for texturing a single crystal silicon wafer of Example 10 according to the present invention.
이하, 본 발명에 대하여 더욱 상세히 설명하기로 한다.Hereinafter, the present invention will be described in more detail.
본 발명에 따른 태양전지 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물은, 조성물 전중량 기준으로 하기 화학식 1의 극성 고분자 화합물 10-6~10중량% , 하기 화학식 2의 실리콘 화합물 10-5~10중량%, 하기 화학식 3의 과불소폴리에테르 화합물 10-5~10중량%, 계면활성제 10-6~10중량% 및, 잔부(balance) 물로 구성된다.The etching composition for texturing a solar cell single crystal silicon wafer according to the present invention comprises 10 -6 to 10% by weight of a polar polymer compound of the following formula 1, 10 -5 to 10% by weight of a silicone compound of the following formula 2, 10 -5 to 10% by weight of a perfluoropolyether compound represented by the following formula (3), 10 -6 to 10% by weight of a surfactant, and balance water.
(화학식 1)(Formula 1)
(상기 화학식 1에서, R1 및 R3는 각각 독립적으로 수소(H-) 또는 메틸(CH3-)이고, R2 및 R4는 각각 독립적으로 수소(H-), 메틸(CH3-), 히드록실(OH-), 카복실(COO-), 아미드(amide-), 페닐(phenyl-), 히드록시페닐(hydroxy phenyl-), 피롤리도닐(pyrrolidonyl-), 카프로락타닐(caprolactanyl-), 디메틸아미노프로필아미드(dimethyl aminopropyl amide-), 히드록시에틸카복실(hydoxyethyl carboxyl-), 폴리에틸렌글리콜(polyethylene glycol), 또는 폴리프로필렌글리콜(polypropylene glycol)이며, n과 m은 각각 독립적으로 1보다 큰 정수이고, 10≤n+m≤1,000 이다.)Wherein R 1 and R 3 are each independently hydrogen (H-) or methyl (CH 3 -), R 2 and R 4 are each independently hydrogen (H-), methyl (CH 3 -), , Hydroxy (OH-), carboxyl (COO-), amide-, phenyl-, hydroxyphenyl-, pyrrolidonyl-, caprolactanyl- ), Dimethyl aminopropyl amide-, hydoxyethyl carboxyl-, polyethylene glycol, or polypropylene glycol, n and m are each independently greater than 1 Lt; = n + m < / = 1,000).
(화학식 2)(2)
(상기 화학식 2에서, R1은 메틸(CH3-), 카복실(carboxyl-), 히드록실(-OH), 폴리에틸렌글리콜(polyethylene glycol), 또는 폴리프로필렌글리콜(polypropylene glycol)이고, R2는 메틸(CH3-), 페닐(phenyl-), 폴리에틸렌글리콜(polyethylene glycol), 또는 폴리프로필렌글리콜(polypropylene glycol)이며, n과 m은 각각 독립적으로 0 보다 큰 정수이고, 2≤n+m≤10 이다.)Wherein R 1 is methyl (CH 3 -), carboxyl-, hydroxyl (-OH), polyethylene glycol, or polypropylene glycol, and R 2 is methyl (CH 3 -), phenyl-, polyethylene glycol, or polypropylene glycol, n and m are each independently an integer greater than 0, and 2? N + m? 10 .)
(화학식 3)(Formula 3)
(상기 화학식 3에서, R은 메틸(CH3-), 아미노(amino-), 에폭시(epoxy-), 알리시클릭에폭시(alicyclic epoxy-), 폴리에테르(polyether-), 카복실(carboxyl-), 페닐(phenyl-), 히드록실(-OH), 폴리에틸렌글리콜(polyethylene glycol), 또는 폴리프로필렌글리콜(polypropylene glycol)이며, n과 m은 각각 독립적으로 0 보다 큰 정수이고, 2≤n+m≤10 이다.)
In the above formula (3), R is at least one selected from the group consisting of methyl (CH 3 -), amino-, epoxy-, alicyclic epoxy-, polyether-, carboxyl-, Wherein n and m are each independently an integer greater than 0, and 2? N + m? 10, to be.)
삭제delete
또한 본 발명에 따른 태양전지 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물은, 선택적으로 당 화합물, 카복실 화합물, 아민 화합물, 수용성 용매, 및/또는 무기 화합물을 포함할 수 있다.Further, the etching composition for texturing a solar cell single crystal silicon wafer according to the present invention may optionally include a saccharide compound, a carboxyl compound, an amine compound, a water-soluble solvent, and / or an inorganic compound.
본 발명에 있어서, 상기 화학식 1로 표시되는 극성 고분자 화합물은 분자량이 5,000~100,000인 다관능기 공중합 극성 고분자를 포함할 수 있다. In the present invention, the polar polymer represented by Formula 1 may include a multifunctional polymer having a molecular weight of 5,000 to 100,000.
상기 화학식 1로 표시되는 극성 고분자 화합물은 텍스쳐링용 에칭 조성물 전 중량에 대하여 10-6~10중량%로 포함되는 것이 바람직하며, 상기의 기준으로 10-6중량% 미만인 경우에는 텍스쳐링을 부여하기 곤란할 우려가 있어 바람직하지 못하며, 역으로 10중량%를 초과하는 경우에는 점도가 지나치게 높아져서 작업성에 문제를 초래할 가능성이 커지므로 역시 바람직하지 못하다.The polar polymer represented by Formula 1 is preferably contained in an amount of 10 -6 to 10% by weight based on the total weight of the etching composition for texturing. When the amount is less than 10 -6 % by weight, it is difficult to impart texturing . Conversely, if it exceeds 10% by weight, the viscosity becomes too high, which increases the possibility of causing problems in workability, which is also undesirable.
또한 상기 화학식 2로 표시되는 실리콘 화합물은 텍스쳐링용 에칭 조성물 전 중량에 대하여 10-5~10중량% 포함되는 것이 바람직하며, 상기 화학식 2로 표시되는 실리콘 화합물의 첨가량이 상기의 기준으로 10-5 중량% 미만인 경우에는 텍스쳐링 에칭 조성물이 실리콘 웨이퍼 표면에서 레벨링(leveling)을 부여하기 곤란하게 우려가 있어 바람직하지 못하며, 역으로 10중량%를 초과할 경우에는 실리콘 웨이퍼 표면에 오염 잔사가 잔류하게 우려가 있으므로 역시 바람직하지 못하다.The silicone compound represented by Formula 2 is preferably included in an amount of 10 -5 to 10 wt% based on the total weight of the etching composition for texturing, and the amount of the silicone compound represented by Formula 2 is 10 -5 wt% %, It is difficult to impart leveling on the surface of the silicon wafer, which is undesirable. Conversely, if it exceeds 10% by weight, contamination residue may remain on the silicon wafer surface It is also undesirable.
한편, 상기 화학식 3으로 표시되는 과불소폴리에테르 화합물은 텍스쳐링 에칭 조성물 전 중량에 대하여 10-5~10중량% 포함되는 것이 바람직하다. Meanwhile, the perfluoropolyether compound represented by Formula 3 is preferably included in an amount of 10 -5 to 10% by weight based on the total weight of the texturing etching composition.
상기 화학식 3으로 표시되는 과불소폴리에테르 화합물의 첨가량이 상기의 기준으로 10-5중량% 미만인 경우에는 실리콘 웨이퍼 표면에서 침투성(penetration effect) 및 젖음성(wetting effect)을 부여하기가 곤란하게 되어 텍스쳐링 효율이 감소할 우려가 있어 바람직하지 못하며, 역으로 10중량%를 초과할 경우에는 점도가 지나치게 높아져서 작업성에 문제를 야기하고 텍스쳐링 속도와 효율이 나빠지는 단점이 초래될 염려가 있으므로 역시 바람직하지 못하다.When the addition amount of the perfluoropolyether compound represented by the above formula 3 is less than 10 -5 % by weight, it is difficult to impart a penetration effect and a wetting effect on the surface of the silicon wafer, And conversely, if it exceeds 10% by weight, the viscosity becomes excessively high, which causes problems in workability and deteriorates the speed of texturing and efficiency, which is also undesirable.
또한 상기 계면활성제는 텍스쳐링용 에칭 조성물의 단결정 실리콘 웨이퍼에 대한 텍스쳐링 효율과 표면의 청정도를 조절할 수 있도록 하기 위하여 사용된다. The surfactant is also used to control the texturing efficiency and cleanliness of a single crystal silicon wafer of an etching composition for texturing.
상기 계면활성제는 구체적으로 알킬폴리 글루코사이드, 폴리옥시알킬렌 알킬에테르, 폴리옥시알킬렌 알킬페닐에테르, 폴리옥시프로필렌 알킬에테르, 폴리옥시프로필렌 알킬페닐에테르, 폴리옥시에틸렌/폴리옥시프로필렌 공중합 알킬에테르, 폴리옥시에틸렌/폴리옥시프로필렌 공중합 알킬페닐에테르, 폴리옥시에틸렌/폴리옥시프로필렌 블록공중합체, 폴리에틸렌글리콜 지방산에스테르, 폴리옥시프로필렌글리콜 지방산에스테르, 폴리에틸렌/폴리옥시프로필렌글리콜 공중합 지방산에스테르, 폴리옥시에틸렌 솔비탄 지방산 에스테르, 폴리옥시프로필렌 솔비탄 지방산 에스테르, 및 폴리옥시에틸렌/폴리옥시프로필렌 공중합 솔비탄 지방산에스테르와 같은 비이온성 계면활성제; 알킬에테르설페이트, 알킬설페이트, 알킬벤젠설포네이트, 알킬벤질설페이트, 이차알칸설포네이트, 알파올레핀 설포네이트, 알킬설포숙시네이트, 알킬에테르포스페이트, 알킬포스페이트, 알킬벤젠포스페이트 및 이의 염과 같은 음이온성 계면활성제; 알킬베타인, 알킬글리신 베타인, 디메틸도데실글리신 베타인 및 코카미도프로필베타인과 같은 양쪽성 계면활성제; 알킬트리메틸암모늄클로라이드, 알킬벤젠트리메틸암모늄클로라이드, 알킬트리메틸암모늄히드록시드, 알킬벤젠트리메틸암모늄히드록시드, 알킬트리에틸암모늄클로라이드, 알킬벤젠트리에틸암모늄클로라이드, 알킬트리에틸암모늄히드록시드 및 알킬벤젠트리에틸암모늄히드록시드와 같은 양이온성 계면활성제; 과불소알킬 카르복시산염, 과불소알킬 술폰산염, 과불소알킬 황산염, 과불소알킬 인산염, 과불소알킬 아민염, 과불소알킬 4급암모늄염, 과불소알킬 카르복시베타인, 과불소알킬 술포베타인 과불소알킬 폴리옥시에틴렌, 과불소폴리에테르(perfluoropolyether) 폴리옥시에틸렌 및 과불소폴리에테르(perfluoropolyether) 폴리옥시프로필렌)와 같은 불소계 계면활성제 중 임의의 어느 하나 또는 이들의 임의의 혼합물을 들 수 있다.The surfactant is specifically selected from alkylpolyglucosides, polyoxyalkylene alkyl ethers, polyoxyalkylene alkyl phenyl ethers, polyoxypropylene alkyl ethers, polyoxypropylene alkyl phenyl ethers, polyoxyethylene / polyoxypropylene copolymer alkyl ethers, poly Oxyethylene / polyoxypropylene copolymerized alkyl phenyl ether, polyoxyethylene / polyoxypropylene block copolymer, polyethylene glycol fatty acid ester, polyoxypropylene glycol fatty acid ester, polyethylene / polyoxypropylene glycol copolymer fatty acid ester, polyoxyethylene sorbitan fatty acid Nonionic surfactants such as esters, polyoxypropylene sorbitan fatty acid esters, and polyoxyethylene / polyoxypropylene copolymerized sorbitan fatty acid esters; Anionic interfaces such as alkyl ether sulfates, alkyl sulfates, alkylbenzenesulfonates, alkylbenzyl sulfates, secondary alkanesulfonates, alpha olefin sulfonates, alkyl sulfosuccinates, alkyl ether phosphates, alkyl phosphates, alkyl benzene phosphates, An activator; Amphoteric surfactants such as alkyl betaines, alkyl glycine betaines, dimethyl dodecyl glycine betaine and cocamidopropyl betaine; Alkyl trimethyl ammonium chloride, alkyl benzene trimethyl ammonium chloride, alkyl trimethyl ammonium hydroxide, alkyl benzene trimethyl ammonium hydroxide, alkyl triethyl ammonium chloride, alkyl benzene triethyl ammonium chloride, alkyl triethyl ammonium hydroxide and alkyl benzene tri Cationic surfactants such as ethyl ammonium hydroxide; Perfluoroalkyl sulfonates, perfluoro alkyl sulfonates, perfluoro alkyl sulfonates, perfluoro alkyl phosphates, perfluoro alkyl amine salts, perfluoro alkyl quaternary ammonium salts, perfluoro alkyl carboxybetaines, perfluoro alkyl sulfobetaine perfluoro A fluorinated surfactant such as an alkyl polyoxyethylene, an alkyl polyoxyethylene, a perfluoropolyether polyoxyethylene, and a perfluoropolyether polyoxypropylene), or any mixture thereof.
상기 계면활성제는 텍스쳐링용 에칭 조성물 전 중량에 대하여 10-6~10중량%로 포함되는 것이 바람직하다. 상기 계면활성제의 첨가량이 상기의 기준으로 10-6 중량% 미만인 경우에는 조성물의 텍스쳐링 효율이 낮아지고 웨이퍼 표면의 이물질에 대한 세정력을 부여하기 곤란하게 될 우려가 있으며, 역으로 10중량%를 초과할 경우에는 점도가 높아져서 작업성이 떨어지고 텍스쳐링 효율이 나빠지며 실리콘 웨이펴 표면 상태가 열등하게 될 우려가 있으므로 역시 바람직하지 못하다.The surfactant is preferably contained in an amount of 10 -6 to 10% by weight based on the total weight of the etching composition for texturing. If the addition amount of the surfactant is less than 10 -6 wt%, the texturing efficiency of the composition may be lowered and it may be difficult to impart detergency to foreign substances on the surface of the wafer. Conversely, if the amount exceeds 10 wt% The viscosity is increased, the workability is lowered, the texturing efficiency is deteriorated, and the surface condition of the silicon wafer is likely to be inferior, which is also undesirable.
한편, 본 발명에 있어서는 선택적 성분으로서 당 화합물이 부가적으로 첨가될 수 있으며, 상기한 당 화합물은 텍스쳐링용 에칭 조성물의 단결정 실리콘 웨이퍼에 대한 텍스쳐링의 균일성을 부여한다. On the other hand, in the present invention, a saccharide compound may be additionally added as an optional component, and the saccharide compound imparts uniformity of texturing to a monocrystalline silicon wafer of an etching composition for texturing.
상기 당 화합물로서는, 글루코스, 말토스, 만노스, 갈락토스, 플럭토스, 슈클로스, 아밀로스, 폴리사카라이드, 리그닌, 렉틴, 잔탄검, 구아검, 셀룰로오스, 디메틸아미노에틸셀룰로오스, 디에틸아미노에틸셀룰로오스, 에틸히드록시에틸셀룰로오스, 메틸히드록시에틸셀룰로오스, 4-아미노벤질셀룰로오스, 트리에틸아미노에틸셀룰로오스, 시아노에틸셀룰로오스, 에틸셀룰로오스, 메틸셀룰로오스, 카르복시메틸셀룰로오스, 카르복시에틸셀룰로오스, 히드록시에틸셀룰로오스, 히드록시프로필셀룰로오스, 알긴산, 아밀로오스, 아밀로펙틴, 펙틴, 스타치, 덱스트린, α-시클로덱스트린, β-시클로덱스트린, γ-시클로덱스트린, 히드록시프로필-β-시클로덱스트린, 메틸-β-시클로덱스트린, 덱스트란, 덱스트란설페이트나트륨, 사포닌, 글리코겐, 자이모산, 렌티난, 시조피난 및 이들의 금속염, 또는 이들의 임의의 혼합물이 사용될 수 있다.Examples of the sugar compound include glucose, maltose, mannose, galactose, flutose, sucrose, amylose, polysaccharide, lignin, lectin, xanthan gum, guar gum, cellulose, dimethylaminoethylcellulose, diethylaminoethylcellulose, ethyl Hydroxyethylcellulose, hydroxyethylcellulose, methylhydroxyethylcellulose, 4-aminobenzylcellulose, triethylaminoethylcellulose, cyanoethylcellulose, ethylcellulose, methylcellulose, carboxymethylcellulose, carboxyethylcellulose, hydroxyethylcellulose, hydroxypropylcellulose, Cyclodextrin, hydroxypropyl-beta-cyclodextrin, methyl-beta-cyclodextrin, dextran, dextrin Tran sulfate sodium, saponin, glycogen, zymo acid, lentil It may be the progenitor evacuation and metal salts thereof, or any mixture of these is used.
상기 당 화합물의 첨가량은 텍스쳐링용 에칭 조성물의 전 중량에 대하여 10-3~ 10중량%로 포함되는 것이 바람직하다. 상기 당 화합물의 첨가량이 상기의 기준으로 10-3 중량% 미만인 경우에는 조성물이 텍스쳐링 균일성이 떨어질 우려가 있으며, 역으로 10중량%를 초과할 경우에는 점도가 높아져 작업성이 떨어지고 실리콘 웨이펴 표면 상태가 열등하게 될 우려가 있으므로 역시 바람직하지 못하다.The added amount of the saccharide compound is preferably 10 -3 to 10% by weight based on the total weight of the etching composition for texturing. If the added amount of the above-mentioned compound is less than 10 -3 % by weight, the composition tends to be poor in texturing uniformity. Conversely, when the amount of the above compound is more than 10% by weight, viscosity increases and workability is deteriorated. It is also undesirable because the state may become inferior.
또한 본 발명에 있어서는 선택적으로 카복실 화합물이 단결정 실리콘 웨이퍼에 대한 텍스쳐링 에칭 강도와 피라미드 모양 조절을 위하여 부가될 수 있다. In the present invention, the carboxyl compound may be selectively added to control the texturing etching strength and the shape of the pyramid for single crystal silicon wafers.
상기 카복실 화합물로서는 아미노산, 아스코빅산, 레티놀산, 초산, 프로피온산, 부틸산, 카프릴산, 카프릭산, 옥살산, 말론산, 말레산, 아디프산, 프탈산, 텔레프탈산, 말산, 구연산, 타르타르산, 젖산, 폼산, 벤조산, 라우릴산, 미리스트산, 스테아린산, 리놀렌산, 아라키돈산 및 그들의 염 중 임의의 어느 하나, 또는 임의의 이들 혼합물이 사용될 수 있다.Examples of the carboxyl compound include amino acid, ascorbic acid, retinoic acid, acetic acid, propionic acid, butyl acid, caprylic acid, capric acid, oxalic acid, malonic acid, maleic acid, adipic acid, phthalic acid, terephthalic acid, Any one of lactic acid, formic acid, benzoic acid, lauric acid, myristic acid, stearic acid, linolenic acid, arachidonic acid and salts thereof, or any mixture thereof may be used.
상기 카복실 화합물은 텍스쳐링용 에칭 조성물 전 중량에 대하여 10-5~10중량% 로 포함되는 것이 바람직하다. 상기 카복실 화합물의 첨가량이 상기의 기준으로 10-5 중량% 미만인 경우에는 조성물의 텍스쳐링 에칭 강도와 피라미드 모양 조절을 제어하는 것이 가능하지 않게 될 우려가 있어 바람직하지 못하며, 역으로 10중량%를 초과할 경우에는 에칭 강도가 지나치게 높아져서 피라미드 형태성이 열등하게 될 우려가 있으므로 역시 바람직하지 못하다.The carboxyl compound is preferably included in an amount of 10 -5 to 10% by weight based on the total weight of the etching composition for texturing. If the addition amount of the carboxyl compound is less than 10 -5 wt% on the basis of the above criteria, it may be impossible to control the texturing etching strength and the pyramid shape control of the composition, which is undesirable, The etching strength becomes too high and the pyramid formability may be inferior, which is also undesirable.
또한 본 발명에 있어서는 아민 화합물이 단결정 실리콘 웨이퍼에 균일하고 밀도가 높은 피라미드 형성을 위하여 선택적으로 부가될 수 있다.In the present invention, an amine compound can be selectively added to a monocrystalline silicon wafer for forming a uniform and dense pyramid.
상기 아민 화합물로서는 모노에탄올아민, 디에탄올아민, 트리에탄올아민, 모노프로필아민, 디프로필아민, 모노이소프로필아민, 디이소프로필아민, 에틸렌디아민, 히드록시아민, N-메틸히드록실아민, N,N-디메틸히드록시아민, 2-에틸아미노에탄올, 2-(2-아미노에틸아미노)에탄올, 사이클로헥실아민, 디사이클로핵실아민, 벤질아민, 디벤질아민, N-메틸벤질아민, 디메틸벤질아민, 피롤, 피롤리딘, 피리딘, 피페리딘, 피페리돈, 피롤리돈, 메틸피롤리돈, 비닐피롤리돈, 비닐메틸피롤리돈, 카프로락탐, 비닐카프로락탐, 이미다졸리디논, 테트라히드로퓨란, 아닐린 중 임의의 어느 하나 또는 이들의 임의의 혼합물을 사용할 수 있다.Examples of the amine compound include monoethanolamine, diethanolamine, triethanolamine, monopropylamine, dipropylamine, monoisopropylamine, diisopropylamine, ethylenediamine, hydroxyamine, N-methylhydroxylamine, N, N (2-aminoethylamino) ethanol, cyclohexylamine, dicyclohexylamine, benzylamine, dibenzylamine, N-methylbenzylamine, dimethylbenzylamine, pyrrole , Pyrrolidine, pyrrolidine, pyridine, piperidine, piperidone, pyrrolidone, methylpyrrolidone, vinylpyrrolidone, vinylmethylpyrrolidone, caprolactam, vinylcaprolactam, imidazolidinone, tetrahydrofuran, Aniline, or any mixture thereof may be used.
상기 아민 화합물은 텍스쳐링용 에칭 조성물의 전 중량에 대하여 10-5~10중량부 포함되는 것이 바람직하다. 상기 아민 화합물의 첨가량이 상기의 기준으로 10-5 중량% 미만인 경우에는 피라미드의 균일성과 밀도를 제어하기 곤란하게 될 우려가 있어 바람직하지 못하며, 역으로 10중량%를 초과할 경우에는 텍스쳐링 속도가 매우 늦어지는 단점이 있으므로 역시 바람직하지 못하다.The amine compound is preferably included in an amount of 10 -5 to 10 parts by weight based on the total weight of the etching composition for texturing. If the addition amount of the amine compound is less than 10 -5 % by weight, it may be difficult to control the uniformity and density of the pyramid, and if it is more than 10% by weight, It is also undesirable because it has the disadvantage of slowing down.
또한 본 발명에 있어서는 수용성 용매를 선택적으로 포함할 수 있으며, 상기 아민 화합물과 같이 단결정 실리콘 웨이퍼에 균일하고 밀도가 높은 피라미드 형성에 영향을 준다. In addition, the present invention can selectively include a water-soluble solvent and affects the formation of a uniform and dense pyramid on a single crystal silicon wafer like the amine compound.
상기 수용성 용매로서는, 부탄올, 이소부탄올, t-부탄올, 핵산올, 이소핵산올, 2-에틸헥산올, 부탄디올, 펜탄디올, 헥산디올, 시클로펜탄디올, 시클로헥산디올, 시클로헥산트리올, 시클로헵탄트리올과 같은 알코올계; 메틸렌글리콜, 에틸렌글리콜, 프로필렌글리콜, 이소프로필렌글리콜, 부틸렌글리콜, 이소부틸렌글리콜, 헥실렌글리콜, 에틸헥실렌글리콜, 메틸렌디글리콜, 에틸렌디글리콜, 프로필렌디글리콜, 이소프로필렌디글리콜, 부틸렌디글리콜, 이소부틸렌디글리콜, 헥실렌디글리콜, 에틸헥실렌디글리콜, 메틸렌트리글리콜, 에틸렌트리글리콜, 프로필렌트리글리콜, 이소프로필렌트리글리콜, 부틸렌트리글리콜, 이소부틸렌트리글리콜, 헥실렌트리글리콜, 에틸헥실렌트리글리콜, 에틸렌글리콜, 디에틸렌글리콜, 트리에틸렌글리콜, 테트라에틸렌글리콜, 펜타에틸렌글리콜, 헥사에틸렌글리콜, 폴리에틸렌글리콜, 프로필렌글리콜, 디프로필렌글리콜, 트리프로필렌글리콜, 테트라프로필렌글리콜, 펜타프로필렌글리콜, 헥사프로필렌글리콜, 폴리프로필렌글리콜과 같은 글리콜계; 디메틸 카보네이트, 메틸에틸카보네이트, 디에틸 카보네이트, 에틸렌 카보네이트, 프로필렌 카보네이트와 같은 카보네이트계; 에틸 락테이트, 프로필 락테이트, 부틸 락테이트, 에틸 프로피온에이트, 프로필 프로피온에이트, 부틸 프로피온에트, 프로필렌글라이콜메틸에테르 아세테이트와 같은 에스테르계; δ-부티로락톤, 카프로락톤과 같은 락톤계; N-비닐카바졸, N-아크릴로일카바졸과 같은 카바졸계; 그리고 벤질 글리콜, 벤질 디글리콜, 벤질 트리글리콜, 벤질 테트라글리콜, 페닐 글리콜, 페닐 디글리콜, 페닐 트리글리콜, 페닐 테트라글리콜, 벤젠설포네이트, 벤질설페이트와 같은 방향족계를 들 수 있으며, 이들 중 임의의 어느 하나 또는 임의의 이들 혼합물을 사용할 수 있다.Examples of the water-soluble solvents include butanol, isobutanol, t-butanol, nucleic acid, iso-nucleic acid, 2-ethylhexanol, butanediol, pentanediol, hexanediol, cyclopentanediol, cyclohexanediol, cyclohexanetriol, Alcoholic systems such as triols; But are not limited to, methylene glycol, ethylene glycol, propylene glycol, isopropylene glycol, butylene glycol, isobutylene glycol, hexylene glycol, ethylhexylene glycol, methylene diglycol, ethylene diglycol, propylene diglycol, Butylene glycol, hexyleneglycol, hexyleneglycol, hexyleneglycol, ethyleneglycol diglycol, ethyleneglycol, ethylene glycol, propylene glycol, isopropyleneglycol, butyleneglycol, isobutyleneglycol, hexyleneglycol, Diethylene glycol, triethylene glycol, tetraethylene glycol, pentaethylene glycol, hexaethylene glycol, polyethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, tetrapropylene glycol, Glycol, hexapropylene glycol, polypropylene glycol and Is a glycol; Carbonates such as dimethyl carbonate, methyl ethyl carbonate, diethyl carbonate, ethylene carbonate and propylene carbonate; Esters such as ethyl lactate, propyl lactate, butyl lactate, ethyl propionate, propyl propionate, butyl propionate and propylene glycol methyl ether acetate; lactone systems such as? -butyrolactone and caprolactone; Carbazole systems such as N-vinylcarbazole and N-acryloylcarbazole; And aromatic compounds such as benzyl glycol, benzyldiglycol, benzyltriglycol, benzyltetraglycol, phenylglycol, phenyldiglycol, phenyltriglycol, phenyltetraglycol, benzenesulfonate and benzylsulfate, Any one or a mixture of any of these may be used.
상기 수용성 용매는 텍스쳐링용 에칭 조성물 전 중량에 대하여 10-3~10중량% 포함되는 것이 바람직하다. 상기 수용성 용매의 첨가량이 상기의 기준으로 10-3 중량% 미만인 경우에는 상기 아민계 화합물이 경우와 마찬가지로 피라미드의 균일성과 밀도를 제어라기 곤란하게 될 우려가 있어 바람직하지 못하며, 역으로 10중량%를 초과할 경우에는 텍스쳐링 속도가 지나치게 늦어지게 되는 단점이 있으므로 역시 바람직하지 못하다.The water-soluble solvent is preferably contained in an amount of 10 -3 to 10% by weight based on the total weight of the etching composition for texturing. If the addition amount of the water-soluble solvent is less than 10 -3 wt% based on the above-mentioned criteria, the amine compound may not be uniformly controlled in uniformity and density of the pyramid as in the case, The texturing speed becomes too slow, which is also undesirable.
또한 본 발명에 있어서는 선택적으로 무기 화합물을 부가할 수 있으며, 상기한 무기 화합물은 단결정 실리콘 웨이퍼의 텍스쳐링 에칭율을 조절하는데 사용한다.In the present invention, an inorganic compound may be selectively added, and the above-mentioned inorganic compound is used for controlling a texturing etching rate of a single crystal silicon wafer.
상기의 무기 화합물은 규산나트륨, 규산칼륨, 규산리튬, 규산산화물, 테트라소듐실리케이트, 헥사소듐실리케이트, 디소듐실리케이트, 실리카, 소듐카보네이트, 소듐바이카보네이트, 칼슘카보네이트, 소듐클로라이드, 칼슘클로라이드, 포타슘클로라이트, 마그네슘클로라이드, 소듐플로라이드, 칼슘플로라이드, 포타슘플로라이드, 소듐포스페이트, 포타슘포스페이트, 테스트라포타슘피로포스페이트, 소듐테스라피로포스페이트, 소듐설페이트, 칼슘설페이트, 마그네슘설페이트 중 어느 하나 또는 이들의 임의의 혼합물을 사용할 수 있다.The inorganic compound may be selected from the group consisting of sodium silicate, potassium silicate, lithium silicate, silicate oxide, tetrasodium silicate, hexasodium silicate, disodium silicate, silica, sodium carbonate, sodium bicarbonate, calcium carbonate, sodium chloride, calcium chloride, , Magnesium chloride, sodium fluoride, calcium fluoride, potassium fluoride, sodium phosphate, potassium phosphate, testapotassium pyrophosphate, sodium testafiophosphate, sodium sulfate, calcium sulfate, magnesium sulfate, or any of these Mixtures may be used.
상기 무기 화합물은 텍스쳐링용 에칭 조성물 전 중량에 대하여 10-5~10중량% 로 포함되는 것이 바람직하다. 상기 무기 화합물의 첨가량이 상기의 기준으로 10-5 중량% 미만인 경우에는 웨이퍼의 텍스쳐링 에칭율을 조절하기 곤란하게 될 우려가 있어 바람직하지 못하며, 역으로 10중량%를 초과할 경우에는 알칼리 화합물에 대한 강한 완충작용으로 에칭율이 현저히 낮아져 피라미드가 불충분하게 형성될 우려가 있으므로 역시 바람직하지 못하다.The inorganic compound is preferably contained in an amount of 10 -5 to 10% by weight based on the total weight of the etching composition for texturing. If the addition amount of the inorganic compound is less than 10 -5 % by weight, it may be difficult to control the etching rate of the texturing of the wafer, and if it is more than 10% by weight, The etching rate is remarkably lowered due to the strong buffering action and the pyramid may be insufficiently formed, which is also undesirable.
본 발명에 따른 상기의 텍스쳐링용 에칭 조성물을 이용한 태양전지용 단결정 실리콘 웨이퍼의 텍스쳐링 방법은, 이온 교환수(또는 증류수) 100부피부에 대하여, 수산화칼륨, 수산화나트륨, 수산화암모늄, 테트라히드록시메틸암모늄 및 테트라히드록시에틸암모늄 중 어느 하나, 또는 이들의 임의의 혼합물로 이루어지는 알칼리 화합물 0.1~ 20부피부, 바람직하게는 1~10부피부, 더욱 바람직하게는 2~5부피부와, 전술한 본 발명에 따른 텍스쳐링용 에칭 조성물 0.1~20부피부, 바람직하게는 0.5~10부피부, 더욱 바람직하게는 1~5부피부를 함께 혼합하는 단계가 첫 번째 단계이며, 이후 상기 알칼리 수용액과 본 발명에 따른 전술한 텍스쳐링용 에칭 조성물이 혼합된 용액에 태양전지용 단결정 실리콘 웨이퍼를 60℃ 내지 100℃의 온도, 바람직하게는 70℃ 내지 90℃의 온도, 더욱 바람직하게는 75℃ 내지 85℃의 온도에서 1분 내지 30분, 바람직하게는 5분 내지 25분, 더욱 바람직하게는 14분 내지 20분 동안 침적, 분무, 또는 침적 및 분무하여 태양전지용 단결정 실리콘 웨이퍼를 텍스쳐링하는 단계로 진행된다.A method of texturing a single crystal silicon wafer for a solar cell using the etching composition for texturing according to the present invention is a method for texturing 100 parts of ion-exchanged water (or distilled water) with the use of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethyl ammonium, More preferably 2 to 5 parts by weight of the skin, preferably 1 to 10 parts by weight of the skin, more preferably 2 to 5 parts by weight of the alkaline compound consisting of any one of the above- The step of mixing together 0.1-20 parts of skin, preferably 0.5-10 parts of skin, more preferably of 1-5 parts of skin is the first step and then the aqueous solution of alkaline and the tactics according to the invention A single crystal silicon wafer for a solar cell is heated at a temperature of 60 캜 to 100 캜, preferably at a temperature of 70 캜 to 90 캜 , More preferably at a temperature of 75 ° C to 85 ° C for 1 minute to 30 minutes, preferably 5 minutes to 25 minutes, and more preferably 14 minutes to 20 minutes. And proceeds to a step of texturing a single crystal silicon wafer.
여기서 상기의 알칼리 화합물과 텍스쳐링용 에칭 조성물이 이온 교환수 100부피부에 대하여 각각 0.1부피부 미만일 경우에는 에칭시간이 길어지고 에칭율이 낮아져 피라미드 형성이 잘 않되거나 크기가 매우 커지게 될 우려가 있어 바람직하지 못하며, 상기의 알칼리 화합물과 텍스쳐링용 에칭 조성물이 각각 10부피부를 초과할 경우에는 알칼리 화합물에 대한 완충작용이 너무 커서 에칭이 일어나지 않아 피라미드 형성이 원활히 이루어지지 않게 될 우려가 있으므로 역시 바람직하지 못하다.If the alkaline compound and the etching composition for texturing are each less than 0.1 part skin for 100 parts of ion-exchanged water, the etching time becomes longer and the etching rate becomes lower, which may result in poor formation of the pyramid or a very large size If the above alkaline compound and the etching composition for texturing exceed 10 parts of the skin, respectively, the buffering action against the alkaline compound is too large to cause the etching to occur and the pyramid formation may not be smoothly performed. Can not do it.
본 발명에 있어서 물의 종류는 특별히 한정적이지 않으나, 이온교환수(또는 증류수)가 바람직하고, 보다 바람직하게는 반도체 공정용 이온교환수이다.In the present invention, the kind of water is not particularly limited, but ion-exchanged water (or distilled water) is preferable, and ion-exchanged water for semiconductor processing is more preferable.
또한 본 발명에 따른 태양전지용 단결정 실리콘 웨이퍼는 전술한 텍스쳐링용 에칭 조성물을 이용한 텍스쳐링에 의하여 0.1~10㎛의 크기, 바람직하게는 1~7㎛의 크기, 더욱 바람직하게는 2~2.5㎛ 크기의 피라미드가 적어도 일 표면에 형성되어 있다. The monocrystalline silicon wafer for a solar cell according to the present invention may be formed by texturing using the above-described etching composition for texturing, such as a pyramid having a size of 0.1 to 10 탆, preferably 1 to 7 탆, more preferably 2 to 2.5 탆, Is formed on at least one surface.
또한 본 발명에 따른 태양전지용 셀 및/또는 모듈 장치는 상기한 바와 같은 단결정 실리콘 웨이퍼를 포함한다.
Further, the solar cell and / or module device according to the present invention includes a single crystal silicon wafer as described above.
이하, 실시예 및 비교예를 통하여 본 발명을 보다 구체적으로 설명하기로 하나, 이는 본 발명을 예증(例證)하기 위한 것일뿐 본 발명을 제한하고자 하는 것은 아니다.
Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples. However, the present invention is not intended to limit the present invention.
<실시예 1 내지 10 및 비교예 1 내지 10> ≪ Examples 1 to 10 and Comparative Examples 1 to 10 >
하기 표 1과 표 2에 기재된 바와 같은 조성 성분 및 조성비로 태양전지용 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물을 제조하였고, 이온교환수에 45% 수산화칼륨(KOH)용액 및 상기 제조된 텍스쳐링용 에칭 조성물를 혼합하여 사용하는데 상기 수산화칼륨 알칼리 용액은 이온 교환수 100부피부에 대하여 2.5부피부를 혼합하고, 상기 텍스쳐링 케미칼 조성물은 이온 교환수 100부피부에 대하여 2부피부를 혼합하여 사용하였다. An etching composition for texturing a single crystal silicon wafer for a solar cell was prepared at the compositional components and composition ratios shown in Tables 1 and 2 below. To the ion-exchanged water, 45% potassium hydroxide (KOH) solution and the etching composition for texturing The potassium hydroxide alkali solution was mixed with 2.5 parts of skin to 100 parts of ion-exchanged water, and the texturing chemical composition was mixed with 2 parts of skin to 100 parts of ion-exchanged water.
하기 실시예 1 내지 10 및 비교예 1 내지 10에 따른 텍스쳐링용 에칭 조성물과 상기의 수산화칼륨 알칼리 용액을 혼합한 용액에 156mm x 156mm 크기의 태양전지용 단결정 실리콘 웨이퍼를 수직으로 침적하여 에칭하였으며, 이에 따른 에칭 온도, 에칭시간, 에칭량, 피라미드 크기, 텍스쳐 균일성, 반사율을 아래의 평가방법에 따라 측정하였으며, 그 결과를 하기의 표 1 및 표 2에 나타냈다.A single crystal silicon wafer for a solar cell of 156 mm x 156 mm size was vertically deposited and etched in a solution obtained by mixing the etching composition for texturing according to Examples 1 to 10 and Comparative Examples 1 to 10 with the above potassium hydroxide alkali solution, The etching temperature, etching time, etching amount, pyramid size, texture uniformity, and reflectance were measured according to the following evaluation methods, and the results are shown in Tables 1 and 2 below.
HEMADMAPMA /
HEMA
헥실아민Dicyclo
Hexylamine
실리케이트Hexasodium
Silicate
실리케이트Sodium
Silicate
(㎛)Pyramid size
(탆)
(600nm, %)reflectivity
(600 nm,%)
HEMADMAPMA /
HEMA
헥실아민Dicyclo
Hexylamine
실리케이트Hexasodium
Silicate
실리케이트Sodium
Silicate
(㎛)Pyramid size
(탆)
8.56.5 ~
8.5
8.56.5 ~
8.5
8.56.5 ~
8.5
8.56.5 ~
8.5
8.56.5 ~
8.5
DMAPMA/HEMA: 디메틸아미노프로필메타아크릴아미드/히드록시에틸메타아크릴레이트 공중합체폴리머 (신원무역상사)DMAPMA / HEMA: dimethylaminopropyl methacrylamide / hydroxyethyl methacrylate copolymer polymer (Shin Won Trading Co.)
VP/DMAPMA: 비닐피롤리돈/디메틸아미노프로필메타아크릴아미드 공중합체폴리머 (신원무역상사)VP / DMAPMA: vinylpyrrolidone / dimethylaminopropyl methacrylamide copolymer polymer (Shin Won Trading Co.)
DMPS(EO): dimethylpolysiloxane exthoxylate (시네추)DMPS (EO): dimethylpolysiloxane exthoxylate (Cinechu)
PFPE(EO): Perfluoropolyether exthoxylate (솔베이)PFPE (EO): Perfluoropolyether exthoxylate (Solvay)
EO/PO: 폴리옥시에틸렌/폴리옥시프로필렌 블록 공중합체 (일본유화)EO / PO: polyoxyethylene / polyoxypropylene block copolymer (Japanese oil painting)
Xanthan gum: 잔탄검 (신원무역상사)Xanthan gum: Zanthan gum (Shinwon Trading Co.)
polysaccharide: 폴리사카라이드 (신원무역상사)polysaccharide: polysaccharide (Shinwon Trading Co.)
ascorbic acid: 아스코빅산 (신원무역상사)ascorbic acid: ascorbic acid (Shinwon Trading Co.)
citric acid: 시트릭산 (덕산이화학)Citric acid: Citric acid (Duksan Chemical)
Tripropylene glycol: 트리프로필렌글리콜 (대정화금)Tripropylene glycol: Tripropylene glycol (purified water)
Hexasodium silicate: 헥사소듐실리케이트 (덕산이화학)Hexasodium silicate: hexasodium silicate (Duksan Chemical)
sodium silicate: 소듐실리케이트 (덕산이화학)
sodium silicate: sodium silicate (Duksan Chemical)
- 에칭량(wt%) = (에칭전 웨이퍼 무게 - 에칭후 웨이퍼 무게)/(에칭전 웨이퍼 무게) x 100
Etching amount (wt%) = (wafer weight before etching - wafer weight after etching) / (wafer weight before etching) x 100
- 피라미드 크기(㎛): 텍스처 에칭된 단결정 실리콘 웨이퍼 기판 표면에 형성된 미세 피라미드의 크기를 주사전자현미경 (Scanning electronic microscope, SEM)을 이용하여 단위 면적에 형성된 미세 피라미드의 크기를 측정하였다.
- Size of pyramid (탆): Size of fine pyramid formed on texture surface of monocrystalline silicon wafer substrate was measured by scanning electron microscope (SEM).
- 텍스쳐 균일성: 에칭된 단결정 실리콘 웨이퍼 기판 표면에 텍스쳐링된 미세 피라미드의 크기, 모양 및 편차, 즉 균일성을 고배율 광학현미경 및 주사전자현미경을 이용하여 미라미드의 모양을 관찰하고, 하기 기준에 따라 평가하였다. - Texture uniformity: The size, shape and deviation, i.e., uniformity, of the fine pyramid textured on the etched monocrystalline silicon wafer substrate surface was observed using a high magnification optical microscope and a scanning electron microscope, and the shape of the mirramide was observed according to the following criteria Respectively.
평가 기준Evaluation standard
좋음: 웨이퍼 기판에 피라미드 크기의 편차가 적고 웨이퍼 표면에 잔사 얼룩 없음. Good: The deviation of the size of the pyramid on the wafer substrate is small and no residue remains on the wafer surface.
보통: 웨이퍼 기판에 피라미드 크기의 편차가 적으나, 웨이퍼 표면에 일부 얼룩 있음. Normal: The deviation of the pyramid size on the wafer substrate is small, but the surface of the wafer is partially stained.
나쁨: 웨이퍼 기판에 피라미드 크기의 편차가 심하고, 웨이퍼 표면에 일부 얼룩 있음.
Poor: The size of the pyramid varies greatly on the wafer substrate, and the surface of the wafer is partially stained.
- 평균반사율(%): 에칭에 의해 텍스쳐링된 단결정 실리콘 웨이퍼 기판 표면에 UV 분광광도계를 이용하여 400~800nm의 파장대를 갖는 광을 조사하였을 때의 평균 반사율을 측정하였다.
Average Reflectivity (%): The average reflectance of a single crystal silicon wafer substrate texture textured by etching was measured using a UV spectrophotometer when light having a wavelength band of 400 to 800 nm was irradiated.
상기 표 1 및 표 2로부터 확인되는 바와 같이, 본 발명에 따라 화학식 1의 극성 고분자 화합물, 화학식 2의 실리콘 화합물, 상기 화학식 3의 과불소폴리에테르 화합물, 계면활성제류, 그리고 선택적으로 당 화합물, 카복실 화합물, 아민 화합물, 수용성 용매, 및/또는 무기화합물을 포함하는 실시예 1 내지 10의 경우에는, 화학식 1의 극성 고분자 화합물, 화학식 2의 실리콘 화합물, 상기 화학식 3의 과불소폴리에테르 화합물, 또는 계면활성제 중 일부가 생략된 비교예 1 내지 10에 비하여, 실리콘 웨이퍼의 표면에 형성된 미세 피라미드의 크기가 작고 우수한 균일성을 가져 광 반사율이 낮아 광 효율을 높일 수 있었다.As can be seen from Tables 1 and 2, according to the present invention, the polar polymer compound of Formula 1, the silicone compound of Formula 2, the perfluoropolyether compound of Formula 3, the surfactants, In the case of Examples 1 to 10 comprising a compound, an amine compound, a water-soluble solvent and / or an inorganic compound, the polar polymer compound of Formula 1, the silicone compound of Formula 2, the perfluoropolyether compound of Formula 3, Compared with Comparative Examples 1 to 10 in which some of the activators were omitted, the size of the fine pyramid formed on the surface of the silicon wafer was small and excellent uniformity was achieved, so that the light reflectance was low and the light efficiency was increased.
도 1은 본 발명의 실시예 10의 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물로 텍스쳐를 에칭한 단결정 실리콘 웨이퍼의 표면을 나타낸 SEM 사진이고, 도 2는 본 발명의 실시예 10의 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물로 텍스쳐를 에칭한 단결정 실리콘 웨이퍼의 측면을 나타낸 SEM 사진으로서, 이를 통하여 단결정 실리콘 웨이퍼 표면에 균일하게 미세 피라미드가 형성되어 텍스쳐링 편차가 적고 균일성이 향상된 것을 명확히 확인할 수 있었다.FIG. 1 is a SEM photograph showing a surface of a single crystal silicon wafer in which a texture is etched with an etching composition for texturing a single crystal silicon wafer of Example 10 of the present invention. FIG. 2 is a cross- SEM photograph showing a side view of a single crystal silicon wafer in which a texture was etched with an etching composition. It was confirmed clearly that fine pyramids were uniformly formed on the surface of a single crystal silicon wafer through this, and texture unevenness was reduced and uniformity was improved.
반면, 상기 비교예 1에서 화학식 1의 극성 고분자 화합물이 제외가 된 조성물의 경우, 텍스쳐링을 부여하기가 어렵고, 상기 비교예 2 내지 3에서 화학식 2의 실리콘 화합물이 제외된 경우, 조성물이 실리콘 웨이퍼의 표면 레벨링(leveling)을 부여하기가 어려워 텍스쳐링의 균일성이 나빠지고 반사율이 증가하며, 상기 비교예 4 내지 5에서 화학식 3의 과불소폴리에테르 화합물이 제외된 경우에는 침투성(penetration effect) 및 젖음성(wetting effect)을 부여하기 어려워 텍스춰링 효율이 감소하고 반사율이 증가하며, 상기 비교예 6 내지 10의 경우, 에칭속도가 느려지고, 반사율이 높아 텍스쳐링 불량이 나타났다.
On the other hand, in the case of the composition of Comparative Example 1 excluding the polar polymeric compound of Chemical Formula 1, it is difficult to impart texturing, and when the silicone compound of Chemical Formula 2 is excluded in Comparative Examples 2 to 3, In the case where the perfluoropolyether compound of Chemical Formula 3 is excluded in Comparative Examples 4 to 5, the penetration effect and the wettability (wettability it is difficult to impart a wetting effect. Thus, the texturing efficiency is decreased and the reflectance is increased. In the case of the comparative examples 6 to 10, the etching rate is slow, and the reflectance is high.
Claims (17)
(화학식 1)
(상기 화학식 1에서, R1 및 R3는 각각 독립적으로 수소(H-) 또는 메틸(CH3-)이고, R2 및 R4는 각각 독립적으로 수소(H-), 메틸(CH3-), 히드록실(OH-), 카복실(COO-), 아미드(amide-), 페닐(phenyl-), 히드록시페닐(hydroxy phenyl-), 피롤리도닐(pyrrolidonyl-), 카프로락타닐(caprolactanyl-), 디메틸아미노프로필아미드(dimethyl aminopropyl amide-), 히드록시에틸카복실(hydoxyethyl carboxyl-), 폴리에틸렌글리콜(polyethylene glycol), 또는 폴리프로필렌글리콜(polypropylene glycol)이며, n과 m은 각각 독립적으로 1보다 큰 정수이고, 10≤n+m≤1,000 이다.)
(화학식 2)
(상기 화학식 2에서, R1은 메틸(CH3-), 카복실(carboxyl-), 히드록실(-OH), 폴리에틸렌글리콜(polyethylene glycol), 또는 폴리프로필렌글리콜(polypropylene glycol)이고, R2는 메틸(CH3-), 페닐(phenyl-), 폴리에틸렌글리콜(polyethylene glycol), 또는 폴리프로필렌글리콜(polypropylene glycol)이며, n과 m은 각각 독립적으로 0 보다 큰 정수이고, 2≤n+m≤10 이다.)
(화학식 3)
(상기 화학식 3에서, R은 메틸(CH3-), 아미노(amino-), 에폭시(epoxy-), 알리시클릭에폭시(alicyclic epoxy-), 폴리에테르(polyether-), 카복실(carboxyl-), 페닐(phenyl-), 히드록실(-OH), 폴리에틸렌글리콜(polyethylene glycol), 또는 폴리프로필렌글리콜(polypropylene glycol)이며, n과 m은 각각 독립적으로 0 보다 큰 정수이고, 2≤n+m≤10 이다.)The composition based on the total weight, the polar polymer to 10 compounds of formula (1) -6% to 10% by weight, to perfluoropolyether compound 10 -5 to 10 parts by weight silicon compound of the general formula (2) 10 -5 to 10% by weight, of the formula 3 % Of a surfactant, 10 -6 to 10 wt% of a surfactant, and balance water.
(Formula 1)
Wherein R 1 and R 3 are each independently hydrogen (H-) or methyl (CH 3 -), R 2 and R 4 are each independently hydrogen (H-), methyl (CH 3 -), , Hydroxy (OH-), carboxyl (COO-), amide-, phenyl-, hydroxyphenyl-, pyrrolidonyl-, caprolactanyl- ), Dimethyl aminopropyl amide-, hydoxyethyl carboxyl-, polyethylene glycol, or polypropylene glycol, n and m are each independently greater than 1 Lt; = n + m < / = 1,000).
(2)
Wherein R 1 is methyl (CH 3 -), carboxyl-, hydroxyl (-OH), polyethylene glycol, or polypropylene glycol, and R 2 is methyl (CH 3 -), phenyl-, polyethylene glycol, or polypropylene glycol, n and m are each independently an integer greater than 0, and 2? N + m? 10 .)
(Formula 3)
In the above formula (3), R is at least one selected from the group consisting of methyl (CH 3 -), amino-, epoxy-, alicyclic epoxy-, polyether-, carboxyl-, Wherein n and m are each independently an integer greater than 0, and 2? N + m? 10, to be.)
상기한 비이온성 계면활성제가 알킬폴리 글루코사이드, 폴리옥시알킬렌 알킬에테르, 폴리옥시알킬렌 알킬페닐에테르, 폴리옥시프로필렌 알킬에테르, 폴리옥시프로필렌 알킬페닐에테르, 폴리옥시에틸렌/폴리옥시프로필렌 공중합 알킬에테르, 폴리옥시에틸렌/폴리옥시프로필렌 공중합 알킬페닐에테르, 폴리옥시에틸렌/폴리옥시프로필렌 블록공중합체, 폴리에틸렌글리콜 지방산에스테르, 폴리옥시프로필렌글리콜 지방산에스테르, 폴리에틸렌/폴리옥시프로필렌글리콜 공중합 지방산에스테르, 폴리옥시에틸렌 솔비탄 지방산 에스테르, 폴리옥시프로필렌 솔비탄 지방산 에스테르, 또는 폴리옥시에틸렌/폴리옥시프로필렌 공중합 솔비탄 지방산 에스테르이고;
상기한 음이온성 계면활성제가 알킬에테르설페이트, 알킬설페이트, 알킬벤젠설포네이트, 알킬벤질설페이트, 이차알칸설포네이트, 알파올레핀 설포네이트, 알킬설포숙시네이트, 알킬에테르포스페이트, 알킬포스페이트, 알킬벤젠포스페이트, 또는 이들의 염이며;
상기한 양쪽성 계면활성제가 알킬베타인, 알킬글리신 베타인, 디메틸도데실글리신 베타인, 또는 코카미도프로필베타인이며;
상기한 양이온성 계면활성제가 알킬트리메틸암모늄클로라이드, 알킬벤젠트리메틸암모늄클로라이드, 알킬트리메틸암모늄히드록시드, 알킬벤젠트리메틸암모늄히드록시드, 알킬트리에틸암모늄클로라이드, 알킬벤젠트리에틸암모늄클로라이드, 알킬트리에틸암모늄히드록시드, 또는 알킬벤젠트리에틸암모늄히드록시드이고;
상기한 불소계 계면활성제가 과불소알킬 카르복시산염, 과불소알킬 술폰산염, 과불소알킬 황산염, 과불소알킬 인산염, 과불소알킬 아민염, 과불소알킬 4급암모늄염, 과불소알킬 카르복시베타인, 과불소알킬 술포베타인 과불소알킬 폴리옥시에틴렌, 과불소폴리에테르(perfluoropolyether) 폴리옥시에틸렌, 또는 과불소폴리에테르(perfluoropolyether) 폴리옥시프로필렌)인
태양전지 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물.3. The method of claim 2,
Wherein said nonionic surfactant is selected from the group consisting of alkyl polyglucosides, polyoxyalkylene alkyl ethers, polyoxyalkylene alkyl phenyl ethers, polyoxypropylene alkyl ethers, polyoxypropylene alkyl phenyl ethers, polyoxyethylene / polyoxypropylene copolymer alkyl ethers, Polyoxyethylene / polyoxypropylene copolymerized alkylphenyl ether, polyoxyethylene / polyoxypropylene block copolymer, polyethylene glycol fatty acid ester, polyoxypropylene glycol fatty acid ester, polyethylene / polyoxypropylene glycol copolymerized fatty acid ester, polyoxyethylene sorbitan Fatty acid esters, polyoxypropylene sorbitan fatty acid esters, or polyoxyethylene / polyoxypropylene copolymerized sorbitan fatty acid esters;
Wherein the anionic surfactant is selected from the group consisting of alkyl ether sulfates, alkyl sulfates, alkylbenzenesulfonates, alkylbenzyl sulfates, secondary alkanesulfonates, alpha olefin sulfonates, alkyl sulfosuccinates, alkyl ether phosphates, alkyl phosphates, alkyl benzene phosphates, Or a salt thereof;
Wherein said amphoteric surfactant is alkyl betaine, alkyl glycine betaine, dimethyl dodecyl glycine betaine, or cocamidopropyl betaine;
Wherein said cationic surfactant is selected from the group consisting of alkyl trimethyl ammonium chloride, alkyl benzene trimethyl ammonium chloride, alkyl trimethyl ammonium hydroxide, alkyl benzene trimethyl ammonium hydroxide, alkyl triethyl ammonium chloride, alkyl benzene triethyl ammonium chloride, A hydroxide, or an alkylbenzenetriethylammonium hydroxide;
The fluorosurfactant may be at least one selected from the group consisting of perfluoroalkylcarboxylate, perfluoroalkylsulfonate, perfluoroalkylsulfate, perfluoroalkylphosphate, perfluoroalkylamine salt, perfluoroalkyl quaternary ammonium salt, perfluoroalkylcarboxybetaine, Perfluoropolyether polyoxyethylene, or perfluoropolyether polyoxypropylene) phosphorus oxyphenylene sulfosuccinate, perfluoropolyether polyoxyethylene,
An etching composition for texturing a solar cell single crystal silicon wafer.
상기한 알코올이 부탄올, 이소부탄올, t-부탄올, 핵산올, 이소핵산올, 2-에틸헥산올, 부탄디올, 펜탄디올, 헥산디올, 시클로펜탄디올, 시클로헥산디올, 시클로헥산트리올, 또는 시클로헵탄트리올이고;
상기한 글리콜이 메틸렌글리콜, 에틸렌글리콜, 프로필렌글리콜, 이소프로필렌글리콜, 부틸렌글리콜, 이소부틸렌글리콜, 헥실렌글리콜, 에틸헥실렌글리콜, 메틸렌디글리콜, 에틸렌디글리콜, 프로필렌디글리콜, 이소프로필렌디글리콜, 부틸렌디글리콜, 이소부틸렌디글리콜, 헥실렌디글리콜, 에틸헥실렌디글리콜, 메틸렌트리글리콜, 에틸렌트리글리콜, 프로필렌트리글리콜, 이소프로필렌트리글리콜, 부틸렌트리글리콜, 이소부틸렌트리글리콜, 헥실렌트리글리콜, 에틸헥실렌트리글리콜, 에틸렌글리콜, 디에틸렌글리콜, 트리에틸렌글리콜, 테트라에틸렌글리콜, 펜타에틸렌글리콜, 헥사에틸렌글리콜, 폴리에틸렌글리콜, 프로필렌글리콜, 디프로필렌글리콜, 트리프로필렌글리콜, 테트라프로필렌글리콜, 펜타프로필렌글리콜, 헥사프로필렌글리콜, 또는 폴리프로필렌글리콜이며;
상기한 카보네이트가 디메틸 카보네이트, 메틸에틸 카보네이트, 디에틸 카보네이트, 에틸렌 카보네이트, 또는 프로필렌 카보네이트이고;
상기한 에스테르가 에틸 락테이트, 프로필 락테이트, 부틸 락테이트, 에틸 프로피온에이트, 프로필 프로피온에이트, 부틸 프로피온에트, 또는 프로필렌글라이콜메틸에테르 아세테이트이며;
상기한 락톤이 부티로락톤 또는 카프로락톤이고;
상기한 카바졸이 N-비닐카바졸 또는 N-아크릴로일카바졸이며;
상기한 방향족 용매가 벤질 글리콜, 벤질 디글리콜, 벤질 트리글리콜, 벤질 테트라글리콜, 페닐 글리콜, 페닐 디글리콜, 페닐 트리글리콜, 페닐 테트라글리콜, 벤젠설포네이트, 또는 벤질설페이트인
태양전지 단결정 실리콘 웨이퍼의 텍스쳐링용 에칭 조성물.12. The method of claim 11,
The alcohol is preferably selected from the group consisting of butanol, isobutanol, t-butanol, nucleic acid, iso-nucleic acid, 2-ethylhexanol, butanediol, pentanediol, hexanediol, cyclopentanediol, cyclohexanediol, cyclohexanetriol, Triol;
Wherein the glycol is at least one selected from the group consisting of methylene glycol, ethylene glycol, propylene glycol, isopropylene glycol, butylene glycol, isobutylene glycol, hexylene glycol, ethylhexylene glycol, methylene diglycol, ethylene diglycol, propylene diglycol, Butylene glycol, ethylene glycol, propylene glycol, butylene glycol, ethylene glycol, propylene glycol, glycol, butylene diol glycol, isobutylene di glycol, hexylene diglycol, ethylhexylene diglycol, methylene tri glycol, ethylene triglycol, Ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, pentaethylene glycol, hexaethylene glycol, polyethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, tetrapropylene Glycol, pentapropylene glycol, hexapropylene glycol, or Lee and propylene glycol;
Wherein said carbonate is dimethyl carbonate, methyl ethyl carbonate, diethyl carbonate, ethylene carbonate, or propylene carbonate;
Wherein said ester is ethyl lactate, propyl lactate, butyl lactate, ethyl propionate, propyl propionate, butyl propionate, or propylene glycol methyl ether acetate;
Said lactone is butyrolactone or caprolactone;
Wherein said carbazole is N-vinylcarbazole or N-acryloylcarbazole;
Wherein the aromatic solvent is selected from the group consisting of benzyl glycol, benzyldiglycol, benzyltriglycol, benzyltetraglycol, phenylglycol, phenyldiglycol, phenyltriglycol, phenyltetraglycol, benzenesulfonate or benzylsulphate
An etching composition for texturing a solar cell single crystal silicon wafer.
상기 혼합 용액에 태양전지용 단결정 실리콘 웨이퍼를 70℃ 내지 90℃의 온도에서 1분 내지 30분 동안 침적, 분무 또는 침적 및 분무하여 태양전지용 단결정 실리콘 웨이퍼를 텍스쳐링하는 단계로 구성되는
태양전지 단결정 실리콘 웨이퍼의 텍스쳐링 방법.0.1 to 20 parts by weight of at least one alkaline compound selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium and tetrahydroxyethylammonium in 100 parts by weight of ion-exchanged water, 14. The method of claim 1, wherein the etching composition is selected from the group consisting of: And
And a step of texturing a single crystal silicon wafer for a solar cell by immersing, spraying or dipping and spraying a single crystal silicon wafer for a solar cell at a temperature of 70 to 90 DEG C for 1 to 30 minutes in the mixed solution
Texturing method of solar cell monocrystalline silicon wafer.
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