KR101468406B1 - Etching composition for texturing mono-crystalline silicon wafer of solar cell and texturing method using the same - Google Patents

Abstract

The present invention relates to an etching composition of single crystalline silicon wafer for texturing used in solar cells and to a texturing method using the same. The etching composition, according to the present invention, comprises polar polymer compounds, silicon compounds, perfluoropolyether compounds, surfactants, water and some part of surfactant based compounds, carboxylic based compounds, amine based compounds, water soluble solvents and/or inorganic compounds. In the present invention, the etching composition of single crystalline silicon wafer for texturing used in solar cells can form a fine pyramid structure controlled on the surface of single crystalline silicon wafer so that the efficiency of the solar cell is improved by increasing light absorption of the surface of single crystalline silicon wafer. In the present invention, the texturing method using the etching composition can form a fine pyramid structure controlled on the surface of single crystalline silicon wafer in a more efficient manner, leading to a single crystal silicon wafer which efficiently turns light energy into electricity, and a cell and a module device for solar cells including the same can be obtained.

Description

[0001] ETCHING COMPOSITION FOR TEXTURING MONO-CRYSTALLINE SILICON WAFER OF SOLAR CELL AND TEXTURING METHOD USING THE SAME [0002]

The present invention relates to an etching composition for texturing a solar cell single crystal silicon wafer and a method of texturing using the same. More particularly, the present invention relates to a process for etching a fine and uniform texturing on the surface of a single crystal silicon wafer for a solar cell, The present invention relates to an etching composition for texturing a solar cell single crystal silicon wafer and a texturing method using the etching composition, and a single crystal silicon wafer for a solar cell and a solar cell and module device comprising the same.

BACKGROUND ART [0002] In the field of eco-friendly energy technology, which is rapidly growing in recent years, solar cells as an electric device for converting solar energy directly into electric energy as an environmentally friendly next generation energy source have been widely used from households to power plants.

The photoconversion efficiency of a solar cell that converts sunlight into electricity is known to have a great influence on the intensity and wavelength of light, the cell thickness of the solar cell, and the texture state of the silicon wafer surface. Among these, The texturing state is a very important factor in energy conversion efficiency.

In the case of single crystal silicon wafers, by performing texturing etching that forms a pyramid structure, energy efficiency can be increased by reducing the light reflection ratio of the surface as well as damaging the surface of the silicon wafer.

Texturing of monocrystalline silicon wafers forms pyramids by anisotropic etching and varies the size, number, density and uniformity of the randomly formed pyramids depending on the composition, concentration, temperature and time of the texturing composition.

The textured wafer reflects the light incident on the inside of the surface at various angles in the direction of the wafer interior, thereby increasing the trapping effect of light and lowering the reflectance, thereby greatly increasing the light energy efficiency of the solar cell.

Korean Patent Application Laid-Open No. 10-2012-0059378 (published on Jun. 6, 2012) discloses a method of texturing single crystal silicon wafers with a fine pyramid structure by using a nonionic, anionic, cationic and amphoteric surfactant or a texturing composition A silicon texturing etchant is disclosed. However, this etchant is not sufficiently satisfactory in size formation and uniformity of the pyramid, and the light reflectance is relatively high, resulting in a problem of deterioration of light energy efficiency.

Also, U.S. Patent No. 6,451,218 discloses alternative texturing solutions that include alkali reagents, IPA, and alkali ethylene glycols. The patent teaches that the solution provides good texturing regeneration, pyramidal size control, and a low evaporation rate of IPA compared to conventional IPA (isopropanol) solutions, thus reducing the frequency of replacing solutions during texturing . However, even though the texturing solution may provide texturing regeneration and reduce evaporation of solution components, the texturing solution with improved texturing uniformity, regrowth, reduced evaporability of components and improved performance of reflectance still remains Is required.

Korean Patent Application Publication No. 10-2011-0033096 (published on Mar. 30, 2011) discloses an alkoxylated glycol having a molecular weight of at least 170 g / mole and a flash point of 75 캜 or higher, a mono-methyl ether and a mono-methyl ether acetate derivative thereof There is disclosed an etchant for texturing a wafer by applying an aqueous solution containing at least one compound selected and at least one alkaline compound to a semiconductor substrate. However, it is still difficult to control the size and uniformity of the pyramid in this etchant, and there is a concern that the surface state of the wafer may be poor.

Therefore, it is a first object of the present invention to provide a solar cell monocrystalline silicon wafer capable of efficiently forming a fine pyramid structure uniformly controlled on the surface of a single crystal silicon wafer in order to increase the light absorption rate of the surface of the single crystal silicon wafer, To provide an etching composition for texturing.

A second object of the present invention is to provide a method of texturing a solar cell single crystal silicon wafer using the etching composition for texturing.

A third object of the present invention is to provide a monocrystalline silicon wafer for a solar cell in which a pyramid of uniform and fine size is formed by the etching composition for texturing.

A fourth object of the present invention is to provide a solar cell module and a module device including the monocrystalline silicon wafer having the pyramid pattern of uniform and fine size.

In order to accomplish the first object of the present invention, according to a preferred aspect of the present invention, there is provided a composition comprising 10 ^-6 to 10% by weight of a polar polymer compound represented by the following formula (1) silicon compound 10 ^-5 to 10% by weight, the formula 3 of the perfluoropolyether compound 10 ^-5 to 10% by weight of surfactant 10 ^-6 to 10% by weight and, the balance (balance) single crystal silicon solar cell that is composed of water An etching composition for texturing a wafer is provided.

(Formula 1)

Wherein R ₁ and R ₃ are each independently hydrogen (H-) or methyl (CH ₃ -), R ₂ and R ₄ are each independently hydrogen (H-), methyl (CH ₃ -), , Hydroxy (OH-), carboxyl (COO-), amide-, phenyl-, hydroxyphenyl-, pyrrolidonyl-, caprolactanyl- ), Dimethyl aminopropyl amide-, hydoxyethyl carboxyl-, polyethylene glycol, or polypropylene glycol, n and m are each independently greater than 1 Lt; = n + m < / = 1,000).

(2)

Wherein R ₁ is methyl (CH ₃ -), carboxyl-, hydroxyl (-OH), polyethylene glycol, or polypropylene glycol, and R ₂ is methyl (CH ₃ -), phenyl-, polyethylene glycol, or polypropylene glycol, n and m are each independently an integer greater than 0, and 2? N + m? 10 .)

(Formula 3)

In the above formula (3), R is at least one selected from the group consisting of methyl (CH ₃ -), amino-, epoxy-, alicyclic epoxy-, polyether-, carboxyl-, Wherein n and m are each independently an integer greater than 0, and 2? N + m? 10, to be.)

Here, the above-mentioned surfactant may be a nonionic surfactant, an anionic surfactant, a cationic surfactant, a fluorinated surfactant, or any mixture thereof.

Specifically, the nonionic surfactant is selected from the group consisting of alkyl polyglucoside, polyoxyalkylene alkyl ether, polyoxyalkylene alkyl phenyl ether, polyoxypropylene alkyl ether, polyoxypropylene alkyl phenyl ether, polyoxyethylene / polyoxypropylene copolymer Alkyl ether, polyoxyethylene / polyoxypropylene copolymerized alkyl phenyl ether, polyoxyethylene / polyoxypropylene block copolymer, polyethylene glycol fatty acid ester, polyoxypropylene glycol fatty acid ester, polyethylene / polyoxypropylene glycol copolymer fatty acid ester, Ethylene sorbitan fatty acid esters, polyoxypropylene sorbitan fatty acid esters, or polyoxyethylene / polyoxypropylene copolymerized sorbitan fatty acid esters; Wherein the anionic surfactant is selected from the group consisting of alkyl ether sulfates, alkyl sulfates, alkylbenzenesulfonates, alkylbenzyl sulfates, secondary alkanesulfonates, alpha olefin sulfonates, alkyl sulfosuccinates, alkyl ether phosphates, alkyl phosphates, alkylbenzene phosphates, Or a salt thereof; Wherein said amphoteric surfactant is alkyl betaine, alkyl glycine betaine, dimethyl dodecyl glycine betaine, or cocamidopropyl betaine; Wherein said cationic surfactant is selected from the group consisting of alkyl trimethyl ammonium chloride, alkyl benzene trimethyl ammonium chloride, alkyl trimethyl ammonium hydroxide, alkyl benzene trimethyl ammonium hydroxide, alkyl triethyl ammonium chloride, alkyl benzene triethyl ammonium chloride, A hydroxide, or an alkylbenzenetriethylammonium hydroxide; The fluorosurfactant may be at least one selected from the group consisting of perfluoroalkylcarboxylate, perfluoroalkylsulfonate, perfluoroalkylsulfate, perfluoroalkylphosphate, perfluoroalkylamine salt, perfluoroalkyl quaternary ammonium salt, perfluoroalkylcarboxybetaine, Perfluoropolyether polyoxyethylene, or perfluoropolyether polyoxypropylene). The term " perfluoropolyether "

In the present invention, the etching composition for texturing may further include 10 ^-3 to 10 wt% of the saccharide compound.

Specifically, the above-mentioned saccharide compounds may be used in combination with glucose, maltose, mannose, galactose, flutose, sucrose, amylose, polysaccharide, lignin, lectin, xanthan gum, guar gum, cellulose, dimethylaminoethylcellulose, , Ethylhydroxyethylcellulose, methylhydroxyethylcellulose, 4-aminobenzylcellulose, triethylaminoethylcellulose, cyanoethylcellulose, ethylcellulose, methylcellulose, carboxymethylcellulose, carboxyethylcellulose, hydroxyethylcellulose, Cyclodextrin, hydroxypropyl-beta-cyclodextrin, methyl- beta -cyclodextrin, dextran, hydroxypropylcellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, alpha -cyclodextrin, beta -cyclodextrin, , Sodium dextran sulfate, saponin, glycogen, zymo , Lentinan, it may be a progenitor evacuation and metal salts thereof, or any mixture thereof.

In the present invention, the etching composition for texturing may further include 10 ^-5 to 10 wt% of a carboxyl compound.

Specifically, the above-mentioned carboxyl compound may be an amino acid, ascorbic acid, retinoic acid, acetic acid, propionic acid, butyric acid, caprylic acid, capric acid, oxalic acid, malonic acid, maleic acid, adipic acid, phthalic acid, terephthalic acid, , Tartaric acid, lactic acid, formic acid, benzoic acid, lauric acid, myristic acid, stearic acid, linolenic acid, arachidonic acid and salts thereof, or any mixture thereof.

In the present invention, the etching composition for texturing may further contain 10 ^-5 to 10% by weight of an amine compound.

Specifically, the amine compound may be selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, monopropylamine, dipropylamine, monoisopropylamine, diisopropylamine, ethylenediamine, hydroxyamine, N-methylhydroxylamine, N, N-dimethylhydroxyamine, 2-ethylaminoethanol, 2- (2-aminoethylamino) ethanol, cyclohexylamine, dicyclohexylamine, benzylamine, dibenzylamine, N-methylbenzylamine, dimethylbenzyl And examples thereof include amines such as amine, pyrrole, pyrrolidine, pyridine, piperidine, piperidone, pyrrolidone, methylpyrrolidone, vinylpyrrolidone, vinylmethylpyrrolidone, caprolactam, vinylcaprolactam, imidazolidinone, tetra Tetrahydrofuran, aniline, or any mixture thereof.

In the present invention, the etching composition for texturing may further contain 10 ^-3 to 10% by weight of a water-soluble solvent.

Specifically, the water-soluble solvent may be an alcohol, a glycol, a carbonate, an ester, a lactone, a carbazole, an aromatic solvent, or any mixture thereof.

More specifically, the alcohol is selected from the group consisting of butanol, isobutanol, t-butanol, nucleic acid, iso-nucleic acid, 2-ethylhexanol, butanediol, pentanediol, hexanediol, cyclopentanediol, cyclohexanediol, Or cycloheptanetriol; The glycol may be at least one selected from the group consisting of methylene glycol, ethylene glycol, propylene glycol, isopropylene glycol, butylene glycol, isobutylene glycol, hexylene glycol, ethylhexylene glycol, methylene diglycol, ethylene diglycol, Butylene glycol, ethylene glycol, propylene glycol, butylene glycol, ethylene glycol, propylene glycol, glycol, butylene diol glycol, isobutylene di glycol, hexylene diglycol, ethylhexylene diglycol, methylene tri glycol, ethylene triglycol, Ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, pentaethylene glycol, hexaethylene glycol, polyethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, tetrapropylene Glycol, pentapropylene glycol, hexapropylene glycol, or Lee and propylene glycol; The carbonate may be dimethyl carbonate, methyl ethyl carbonate, diethyl carbonate, ethylene carbonate, or propylene carbonate; The ester is ethyl lactate, propyl lactate, butyl lactate, ethyl propionate, propyl propionate, butyl propionate, or propylene glycol methyl ether acetate; Said lactone is butyrolactone or caprolactone; Wherein said carbazole is N-vinylcarbazole or N-acryloylcarbazole; The aromatic solvent is benzyl glycol, benzyldiglycol, benzyltriglycol, benzyltetraglycol, phenylglycol, phenyldiglycol, phenyltriglycol, phenyltetraglycol, benzenesulfonate, or benzylsulfate.

In the present invention, the etching composition for texturing may further contain 10 ^-5 to 10% by weight of an inorganic compound.

Specifically, the inorganic compound is selected from the group consisting of sodium silicate, potassium silicate, lithium silicate, silicate oxide, tetrasodium silicate, hexasodium silicate, disodium silicate, silica, sodium carbonate, sodium bicarbonate, calcium carbonate, sodium chloride, calcium chloride, Sodium sulfite, magnesium sulfate, magnesium sulfate, magnesium sulfate, magnesium sulfate, magnesium sulfate, calcium sulfate, calcium sulfate, magnesium chloride, sodium fluoride, calcium fluoride, potassium fluoride, sodium phosphate, potassium phosphate, testapotassium pyrophosphate, sodium testafiophosphate, Lt; / RTI >

In order to achieve the second object of the present invention, there is provided a process for the preparation of a cosmetic composition comprising 100 parts of ion-exchanged water in the presence of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium and tetrahydroxyethylammonium 0.1 to 20 parts by weight of an alkaline compound selected from the group consisting of the following: 0.1 to 20 parts by weight of the skin and 0.1 to 20 parts by weight of the above-mentioned etching composition for texturing; And texturing a single crystal silicon wafer for a solar cell by immersing, spraying or dipping and spraying the single crystal silicon wafer for solar cell at a temperature of 70 to 90 DEG C for 1 to 30 minutes in the mixed solution, Is provided.

According to another aspect of the present invention, there is provided a method of fabricating a solar cell, comprising: forming a silicon single crystal silicon substrate having a uniform pyramid having a size of 0.1 탆 to 10 탆 on at least one surface thereof, A wafer is provided.

Finally, according to a preferred embodiment of the present invention for attaining the fourth object of the present invention, there is provided a solar cell and / or a module device including the aforementioned single crystal silicon wafer.

The etching composition for texturing a solar cell single crystal silicon wafer according to the present invention effectively forms a fine pyramid structure uniformly controlled on the surface of a single crystal silicon wafer in order to increase the light absorption rate of the surface of the single crystal silicon wafer and effectively improve the efficiency of the solar cell According to the texturing method using the etching composition for texturing, a fine pyramid structure uniformly controlled on the surface of a single crystal silicon wafer constituting a solar cell can be more effectively formed, thereby enabling the conversion of light energy into electric energy more efficiently A single crystal silicon wafer for a battery, a solar cell and a module device including the single crystal silicon wafer can be obtained.

1 is a scanning electron microscope (SEM) photograph showing the surface of a single crystal silicon wafer textured with an etching composition for texturing a single crystal silicon wafer of Example 10 according to the present invention.
2 is a SEM photograph showing a side surface of a single crystal silicon wafer textured with an etching composition for texturing a single crystal silicon wafer of Example 10 according to the present invention.

Hereinafter, the present invention will be described in more detail.

The etching composition for texturing a solar cell single crystal silicon wafer according to the present invention comprises 10 ^-6 to 10% by weight of a polar polymer compound of the following formula 1, 10 ^-5 to 10% by weight of a silicone compound of the following formula 2, 10 ^-5 to 10% by weight of a perfluoropolyether compound represented by the following formula (3), 10 ^-6 to 10% by weight of a surfactant, and balance water.

(Formula 1)

Wherein R ₁ and R ₃ are each independently hydrogen (H-) or methyl (CH ₃ -), R ₂ and R ₄ are each independently hydrogen (H-), methyl (CH ₃ -), , Hydroxy (OH-), carboxyl (COO-), amide-, phenyl-, hydroxyphenyl-, pyrrolidonyl-, caprolactanyl- ), Dimethyl aminopropyl amide-, hydoxyethyl carboxyl-, polyethylene glycol, or polypropylene glycol, n and m are each independently greater than 1 Lt; = n + m < / = 1,000).

(2)

Wherein R ₁ is methyl (CH ₃ -), carboxyl-, hydroxyl (-OH), polyethylene glycol, or polypropylene glycol, and R ₂ is methyl (CH ₃ -), phenyl-, polyethylene glycol, or polypropylene glycol, n and m are each independently an integer greater than 0, and 2? N + m? 10 .)

(Formula 3)

(상기 화학식 3에서, R은 메틸(CH₃-), 아미노(amino-), 에폭시(epoxy-), 알리시클릭에폭시(alicyclic epoxy-), 폴리에테르(polyether-), 카복실(carboxyl-), 페닐(phenyl-), 히드록실(-OH), 폴리에틸렌글리콜(polyethylene glycol), 또는 폴리프로필렌글리콜(polypropylene glycol)이며, n과 m은 각각 독립적으로 0 보다 큰 정수이고, 2≤n+m≤10 이다.)

In the above formula (3), R is at least one selected from the group consisting of methyl (CH ₃ -), amino-, epoxy-, alicyclic epoxy-, polyether-, carboxyl-, Wherein n and m are each independently an integer greater than 0, and 2? N + m? 10, to be.)

delete

Further, the etching composition for texturing a solar cell single crystal silicon wafer according to the present invention may optionally include a saccharide compound, a carboxyl compound, an amine compound, a water-soluble solvent, and / or an inorganic compound.

In the present invention, the polar polymer represented by Formula 1 may include a multifunctional polymer having a molecular weight of 5,000 to 100,000.

The polar polymer represented by Formula 1 is preferably contained in an amount of 10 ^-6 to 10% by weight based on the total weight of the etching composition for texturing. When the amount is less than 10 ^-6 % by weight, it is difficult to impart texturing . Conversely, if it exceeds 10% by weight, the viscosity becomes too high, which increases the possibility of causing problems in workability, which is also undesirable.

The silicone compound represented by Formula 2 is preferably included in an amount of 10 ^-5 to 10 wt% based on the total weight of the etching composition for texturing, and the amount of the silicone compound represented by Formula 2 is 10 ^-5 wt% %, It is difficult to impart leveling on the surface of the silicon wafer, which is undesirable. Conversely, if it exceeds 10% by weight, contamination residue may remain on the silicon wafer surface It is also undesirable.

Meanwhile, the perfluoropolyether compound represented by Formula 3 is preferably included in an amount of 10 ^-5 to 10% by weight based on the total weight of the texturing etching composition.

When the addition amount of the perfluoropolyether compound represented by the above formula 3 is less than 10 ^-5 % by weight, it is difficult to impart a penetration effect and a wetting effect on the surface of the silicon wafer, And conversely, if it exceeds 10% by weight, the viscosity becomes excessively high, which causes problems in workability and deteriorates the speed of texturing and efficiency, which is also undesirable.

The surfactant is also used to control the texturing efficiency and cleanliness of a single crystal silicon wafer of an etching composition for texturing.

The surfactant is specifically selected from alkylpolyglucosides, polyoxyalkylene alkyl ethers, polyoxyalkylene alkyl phenyl ethers, polyoxypropylene alkyl ethers, polyoxypropylene alkyl phenyl ethers, polyoxyethylene / polyoxypropylene copolymer alkyl ethers, poly Oxyethylene / polyoxypropylene copolymerized alkyl phenyl ether, polyoxyethylene / polyoxypropylene block copolymer, polyethylene glycol fatty acid ester, polyoxypropylene glycol fatty acid ester, polyethylene / polyoxypropylene glycol copolymer fatty acid ester, polyoxyethylene sorbitan fatty acid Nonionic surfactants such as esters, polyoxypropylene sorbitan fatty acid esters, and polyoxyethylene / polyoxypropylene copolymerized sorbitan fatty acid esters; Anionic interfaces such as alkyl ether sulfates, alkyl sulfates, alkylbenzenesulfonates, alkylbenzyl sulfates, secondary alkanesulfonates, alpha olefin sulfonates, alkyl sulfosuccinates, alkyl ether phosphates, alkyl phosphates, alkyl benzene phosphates, An activator; Amphoteric surfactants such as alkyl betaines, alkyl glycine betaines, dimethyl dodecyl glycine betaine and cocamidopropyl betaine; Alkyl trimethyl ammonium chloride, alkyl benzene trimethyl ammonium chloride, alkyl trimethyl ammonium hydroxide, alkyl benzene trimethyl ammonium hydroxide, alkyl triethyl ammonium chloride, alkyl benzene triethyl ammonium chloride, alkyl triethyl ammonium hydroxide and alkyl benzene tri Cationic surfactants such as ethyl ammonium hydroxide; Perfluoroalkyl sulfonates, perfluoro alkyl sulfonates, perfluoro alkyl sulfonates, perfluoro alkyl phosphates, perfluoro alkyl amine salts, perfluoro alkyl quaternary ammonium salts, perfluoro alkyl carboxybetaines, perfluoro alkyl sulfobetaine perfluoro A fluorinated surfactant such as an alkyl polyoxyethylene, an alkyl polyoxyethylene, a perfluoropolyether polyoxyethylene, and a perfluoropolyether polyoxypropylene), or any mixture thereof.

The surfactant is preferably contained in an amount of 10 ^-6 to 10% by weight based on the total weight of the etching composition for texturing. If the addition amount of the surfactant is less than 10 ^-6 wt%, the texturing efficiency of the composition may be lowered and it may be difficult to impart detergency to foreign substances on the surface of the wafer. Conversely, if the amount exceeds 10 wt% The viscosity is increased, the workability is lowered, the texturing efficiency is deteriorated, and the surface condition of the silicon wafer is likely to be inferior, which is also undesirable.

On the other hand, in the present invention, a saccharide compound may be additionally added as an optional component, and the saccharide compound imparts uniformity of texturing to a monocrystalline silicon wafer of an etching composition for texturing.

Examples of the sugar compound include glucose, maltose, mannose, galactose, flutose, sucrose, amylose, polysaccharide, lignin, lectin, xanthan gum, guar gum, cellulose, dimethylaminoethylcellulose, diethylaminoethylcellulose, ethyl Hydroxyethylcellulose, hydroxyethylcellulose, methylhydroxyethylcellulose, 4-aminobenzylcellulose, triethylaminoethylcellulose, cyanoethylcellulose, ethylcellulose, methylcellulose, carboxymethylcellulose, carboxyethylcellulose, hydroxyethylcellulose, hydroxypropylcellulose, Cyclodextrin, hydroxypropyl-beta-cyclodextrin, methyl-beta-cyclodextrin, dextran, dextrin Tran sulfate sodium, saponin, glycogen, zymo acid, lentil It may be the progenitor evacuation and metal salts thereof, or any mixture of these is used.

The added amount of the saccharide compound is preferably 10 ^-3 to 10% by weight based on the total weight of the etching composition for texturing. If the added amount of the above-mentioned compound is less than 10 ^-3 % by weight, the composition tends to be poor in texturing uniformity. Conversely, when the amount of the above compound is more than 10% by weight, viscosity increases and workability is deteriorated. It is also undesirable because the state may become inferior.

In the present invention, the carboxyl compound may be selectively added to control the texturing etching strength and the shape of the pyramid for single crystal silicon wafers.

Examples of the carboxyl compound include amino acid, ascorbic acid, retinoic acid, acetic acid, propionic acid, butyl acid, caprylic acid, capric acid, oxalic acid, malonic acid, maleic acid, adipic acid, phthalic acid, terephthalic acid, Any one of lactic acid, formic acid, benzoic acid, lauric acid, myristic acid, stearic acid, linolenic acid, arachidonic acid and salts thereof, or any mixture thereof may be used.

The carboxyl compound is preferably included in an amount of 10 ^-5 to 10% by weight based on the total weight of the etching composition for texturing. If the addition amount of the carboxyl compound is less than 10 ^-5 wt% on the basis of the above criteria, it may be impossible to control the texturing etching strength and the pyramid shape control of the composition, which is undesirable, The etching strength becomes too high and the pyramid formability may be inferior, which is also undesirable.

In the present invention, an amine compound can be selectively added to a monocrystalline silicon wafer for forming a uniform and dense pyramid.

Examples of the amine compound include monoethanolamine, diethanolamine, triethanolamine, monopropylamine, dipropylamine, monoisopropylamine, diisopropylamine, ethylenediamine, hydroxyamine, N-methylhydroxylamine, N, N (2-aminoethylamino) ethanol, cyclohexylamine, dicyclohexylamine, benzylamine, dibenzylamine, N-methylbenzylamine, dimethylbenzylamine, pyrrole , Pyrrolidine, pyrrolidine, pyridine, piperidine, piperidone, pyrrolidone, methylpyrrolidone, vinylpyrrolidone, vinylmethylpyrrolidone, caprolactam, vinylcaprolactam, imidazolidinone, tetrahydrofuran, Aniline, or any mixture thereof may be used.

The amine compound is preferably included in an amount of 10 ^-5 to 10 parts by weight based on the total weight of the etching composition for texturing. If the addition amount of the amine compound is less than 10 ^-5 % by weight, it may be difficult to control the uniformity and density of the pyramid, and if it is more than 10% by weight, It is also undesirable because it has the disadvantage of slowing down.

In addition, the present invention can selectively include a water-soluble solvent and affects the formation of a uniform and dense pyramid on a single crystal silicon wafer like the amine compound.

Examples of the water-soluble solvents include butanol, isobutanol, t-butanol, nucleic acid, iso-nucleic acid, 2-ethylhexanol, butanediol, pentanediol, hexanediol, cyclopentanediol, cyclohexanediol, cyclohexanetriol, Alcoholic systems such as triols; But are not limited to, methylene glycol, ethylene glycol, propylene glycol, isopropylene glycol, butylene glycol, isobutylene glycol, hexylene glycol, ethylhexylene glycol, methylene diglycol, ethylene diglycol, propylene diglycol, Butylene glycol, hexyleneglycol, hexyleneglycol, hexyleneglycol, ethyleneglycol diglycol, ethyleneglycol, ethylene glycol, propylene glycol, isopropyleneglycol, butyleneglycol, isobutyleneglycol, hexyleneglycol, Diethylene glycol, triethylene glycol, tetraethylene glycol, pentaethylene glycol, hexaethylene glycol, polyethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, tetrapropylene glycol, Glycol, hexapropylene glycol, polypropylene glycol and Is a glycol; Carbonates such as dimethyl carbonate, methyl ethyl carbonate, diethyl carbonate, ethylene carbonate and propylene carbonate; Esters such as ethyl lactate, propyl lactate, butyl lactate, ethyl propionate, propyl propionate, butyl propionate and propylene glycol methyl ether acetate; lactone systems such as? -butyrolactone and caprolactone; Carbazole systems such as N-vinylcarbazole and N-acryloylcarbazole; And aromatic compounds such as benzyl glycol, benzyldiglycol, benzyltriglycol, benzyltetraglycol, phenylglycol, phenyldiglycol, phenyltriglycol, phenyltetraglycol, benzenesulfonate and benzylsulfate, Any one or a mixture of any of these may be used.

The water-soluble solvent is preferably contained in an amount of 10 ^-3 to 10% by weight based on the total weight of the etching composition for texturing. If the addition amount of the water-soluble solvent is less than 10 ^-3 wt% based on the above-mentioned criteria, the amine compound may not be uniformly controlled in uniformity and density of the pyramid as in the case, The texturing speed becomes too slow, which is also undesirable.

In the present invention, an inorganic compound may be selectively added, and the above-mentioned inorganic compound is used for controlling a texturing etching rate of a single crystal silicon wafer.

The inorganic compound may be selected from the group consisting of sodium silicate, potassium silicate, lithium silicate, silicate oxide, tetrasodium silicate, hexasodium silicate, disodium silicate, silica, sodium carbonate, sodium bicarbonate, calcium carbonate, sodium chloride, calcium chloride, , Magnesium chloride, sodium fluoride, calcium fluoride, potassium fluoride, sodium phosphate, potassium phosphate, testapotassium pyrophosphate, sodium testafiophosphate, sodium sulfate, calcium sulfate, magnesium sulfate, or any of these Mixtures may be used.

The inorganic compound is preferably contained in an amount of 10 ^-5 to 10% by weight based on the total weight of the etching composition for texturing. If the addition amount of the inorganic compound is less than 10 ^-5 % by weight, it may be difficult to control the etching rate of the texturing of the wafer, and if it is more than 10% by weight, The etching rate is remarkably lowered due to the strong buffering action and the pyramid may be insufficiently formed, which is also undesirable.

A method of texturing a single crystal silicon wafer for a solar cell using the etching composition for texturing according to the present invention is a method for texturing 100 parts of ion-exchanged water (or distilled water) with the use of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethyl ammonium, More preferably 2 to 5 parts by weight of the skin, preferably 1 to 10 parts by weight of the skin, more preferably 2 to 5 parts by weight of the alkaline compound consisting of any one of the above- The step of mixing together 0.1-20 parts of skin, preferably 0.5-10 parts of skin, more preferably of 1-5 parts of skin is the first step and then the aqueous solution of alkaline and the tactics according to the invention A single crystal silicon wafer for a solar cell is heated at a temperature of 60 캜 to 100 캜, preferably at a temperature of 70 캜 to 90 캜 , More preferably at a temperature of 75 ° C to 85 ° C for 1 minute to 30 minutes, preferably 5 minutes to 25 minutes, and more preferably 14 minutes to 20 minutes. And proceeds to a step of texturing a single crystal silicon wafer.

If the alkaline compound and the etching composition for texturing are each less than 0.1 part skin for 100 parts of ion-exchanged water, the etching time becomes longer and the etching rate becomes lower, which may result in poor formation of the pyramid or a very large size If the above alkaline compound and the etching composition for texturing exceed 10 parts of the skin, respectively, the buffering action against the alkaline compound is too large to cause the etching to occur and the pyramid formation may not be smoothly performed. Can not do it.

In the present invention, the kind of water is not particularly limited, but ion-exchanged water (or distilled water) is preferable, and ion-exchanged water for semiconductor processing is more preferable.

The monocrystalline silicon wafer for a solar cell according to the present invention may be formed by texturing using the above-described etching composition for texturing, such as a pyramid having a size of 0.1 to 10 탆, preferably 1 to 7 탆, more preferably 2 to 2.5 탆, Is formed on at least one surface.

Further, the solar cell and / or module device according to the present invention includes a single crystal silicon wafer as described above.

Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples. However, the present invention is not intended to limit the present invention.

≪ Examples 1 to 10 and Comparative Examples 1 to 10 >

An etching composition for texturing a single crystal silicon wafer for a solar cell was prepared at the compositional components and composition ratios shown in Tables 1 and 2 below. To the ion-exchanged water, 45% potassium hydroxide (KOH) solution and the etching composition for texturing The potassium hydroxide alkali solution was mixed with 2.5 parts of skin to 100 parts of ion-exchanged water, and the texturing chemical composition was mixed with 2 parts of skin to 100 parts of ion-exchanged water.

A single crystal silicon wafer for a solar cell of 156 mm x 156 mm size was vertically deposited and etched in a solution obtained by mixing the etching composition for texturing according to Examples 1 to 10 and Comparative Examples 1 to 10 with the above potassium hydroxide alkali solution, The etching temperature, etching time, etching amount, pyramid size, texture uniformity, and reflectance were measured according to the following evaluation methods, and the results are shown in Tables 1 and 2 below.

ingredient Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Example 10 DMAPMA /
HEMA 2.5 4 2.5 3 One 4 2 3 VP / DMAPMA 2.5 4 2.5 One 3 3 4 3 DMPS (EO) 0.03 0.03 0.05 0.05 0.05 0.03 0.03 0.05 0.05 0.05 PFPE (EO) 0.02 0.02 0.05 0.05 0.05 0.02 0.02 0.05 0.05 0.05 EO / PO 2 2 3 3 3 2 2 3 3 3 Xanthan gum One 2 2 2 3 2 2 3 Polysaccharide 2 One One One 3 One One One Ascorbic acid 1.5 2 2 3 1.5 1.5 1.5 2 2 Citric acid One One 0.5 0.5 0.5 Dicyclo
Hexylamine 0.5 One 0.5 0.5 0.5 Tripropylene glycol 2 2 3 2 2 2 3 3 3 Hexasodium
Silicate One One One One Sodium
Silicate 3 2 3 3 2 2 3 3 3 Distilled water 88.95 86.95 80.9 82.9 83.9 85.45 83.95 78.9 78.9 77.4 Sum 100 100 100 100 100 100 100 100 100 100 Etching time (minutes) 20 20 20 20 20 16 16 16 18 18 Etching temperature (캜) 80 80 80 80 80 85 85 85 85 85 Etching amount (wt%) 7.1 7.2 7.1 7.4 7.3 6.9 7.0 7.2 7.4 7.6 Pyramid size
(탆) 2.8 to 3.2 2.8 to 3.2 2.3 ~ 2.7 2.3 ~ 2.7 2.3 ~ 2.7 2.3 ~ 2.7 2.3 ~ 2.7 2.2 to 2.4 2.2 to 2.4 2.2 to 2.4 Texture uniformity Great Great Great Great Great Great Great Great Great Great reflectivity
(600 nm,%) 11.33 11.27 12.39 12.45 12.01 11.56 11.37 11.49 11.16 11.21

ingredient Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Comparative Example 7 Comparative Example 8 Comparative Example 9 Comparative Example 10 DMAPMA /
HEMA 4 2.5 3 One 4 2 3 VP / DMAPMA 2.5 4 2.5 One 3 3 4 3 DMPS (EO) 0.03 0.05 0.03 0.03 0.05 PFPE (EO) 0.02 0.02 0.05 0.02 0.05 0.05 EO / PO 2 2 3 3 3 2 3 3 3 Xanthan gum 2 One 2 2 2 3 2 2 3 Polysaccharide 2 One One One One One One Ascorbic acid 1.5 One 2 2 3 1.5 1.5 2 2 Citric acid 0.5 One One 0.5 0.5 Dicyclo
Hexylamine 0.5 One One 0.5 0.5 0.5 Tripropylene glycol 2 2 3 3 2 2 2 3 3 Hexasodium
Silicate One One One One One Sodium
Silicate 3 2 3 3 3 2 2 3 3 Distilled water 89.45 85.48 79.95 78.95 80 87.45 86.47 80.45 81.95 80.95 Sum 100 100 100 100 100 100 100 100 100 100 Etching time (minutes) 20 20 20 20 20 20 20 20 20 20 Etching temperature (캜) 80 80 80 80 80 80 80 80 80 80 Etching amount (wt%) 5.2 5.7 5.0 4.9 4.7 3.2 3.4 3.7 4.1 4.3 Pyramid size
(탆) 10.5 to 11.5 10.5 to 11.5 10.5 to 11.5 10.5 to 11.5 10.5 to 11.5 6.5 ~
8.5 6.5 ~
8.5 6.5 ~
8.5 6.5 ~
8.5 6.5 ~
8.5 Texture uniformity Poor Poor Poor Poor Poor usually usually usually usually usually Average reflectance (%) 20.15 20.46 19.86 18.94 20.01 15.43 15.12 15.67 16.21 16.13

DMAPMA / HEMA: dimethylaminopropyl methacrylamide / hydroxyethyl methacrylate copolymer polymer (Shin Won Trading Co.)

VP / DMAPMA: vinylpyrrolidone / dimethylaminopropyl methacrylamide copolymer polymer (Shin Won Trading Co.)

DMPS (EO): dimethylpolysiloxane exthoxylate (Cinechu)

PFPE (EO): Perfluoropolyether exthoxylate (Solvay)

EO / PO: polyoxyethylene / polyoxypropylene block copolymer (Japanese oil painting)

Xanthan gum: Zanthan gum (Shinwon Trading Co.)

polysaccharide: polysaccharide (Shinwon Trading Co.)

ascorbic acid: ascorbic acid (Shinwon Trading Co.)

Citric acid: Citric acid (Duksan Chemical)

Tripropylene glycol: Tripropylene glycol (purified water)

Hexasodium silicate: hexasodium silicate (Duksan Chemical)

sodium silicate: sodium silicate (Duksan Chemical)

Etching amount (wt%) = (wafer weight before etching - wafer weight after etching) / (wafer weight before etching) x 100

- Size of pyramid (탆): Size of fine pyramid formed on texture surface of monocrystalline silicon wafer substrate was measured by scanning electron microscope (SEM).

 - Texture uniformity: The size, shape and deviation, i.e., uniformity, of the fine pyramid textured on the etched monocrystalline silicon wafer substrate surface was observed using a high magnification optical microscope and a scanning electron microscope, and the shape of the mirramide was observed according to the following criteria Respectively.

Evaluation standard

     Good: The deviation of the size of the pyramid on the wafer substrate is small and no residue remains on the wafer surface.

     Normal: The deviation of the pyramid size on the wafer substrate is small, but the surface of the wafer is partially stained.

Poor: The size of the pyramid varies greatly on the wafer substrate, and the surface of the wafer is partially stained.

Average Reflectivity (%): The average reflectance of a single crystal silicon wafer substrate texture textured by etching was measured using a UV spectrophotometer when light having a wavelength band of 400 to 800 nm was irradiated.

As can be seen from Tables 1 and 2, according to the present invention, the polar polymer compound of Formula 1, the silicone compound of Formula 2, the perfluoropolyether compound of Formula 3, the surfactants, In the case of Examples 1 to 10 comprising a compound, an amine compound, a water-soluble solvent and / or an inorganic compound, the polar polymer compound of Formula 1, the silicone compound of Formula 2, the perfluoropolyether compound of Formula 3, Compared with Comparative Examples 1 to 10 in which some of the activators were omitted, the size of the fine pyramid formed on the surface of the silicon wafer was small and excellent uniformity was achieved, so that the light reflectance was low and the light efficiency was increased.

FIG. 1 is a SEM photograph showing a surface of a single crystal silicon wafer in which a texture is etched with an etching composition for texturing a single crystal silicon wafer of Example 10 of the present invention. FIG. 2 is a cross- SEM photograph showing a side view of a single crystal silicon wafer in which a texture was etched with an etching composition. It was confirmed clearly that fine pyramids were uniformly formed on the surface of a single crystal silicon wafer through this, and texture unevenness was reduced and uniformity was improved.

On the other hand, in the case of the composition of Comparative Example 1 excluding the polar polymeric compound of Chemical Formula 1, it is difficult to impart texturing, and when the silicone compound of Chemical Formula 2 is excluded in Comparative Examples 2 to 3, In the case where the perfluoropolyether compound of Chemical Formula 3 is excluded in Comparative Examples 4 to 5, the penetration effect and the wettability (wettability it is difficult to impart a wetting effect. Thus, the texturing efficiency is decreased and the reflectance is increased. In the case of the comparative examples 6 to 10, the etching rate is slow, and the reflectance is high.

Claims (17)

The composition based on the total weight, the polar polymer to 10 compounds of formula (1) ^-6% to 10% by weight, to perfluoropolyether compound 10 ^-5 to 10 parts by weight silicon compound of the general formula (2) 10 ^-5 to 10% by weight, of the formula 3 % Of a surfactant, 10 ^-6 to 10 wt% of a surfactant, and balance water.
(Formula 1)

Wherein R ₁ and R ₃ are each independently hydrogen (H-) or methyl (CH ₃ -), R ₂ and R ₄ are each independently hydrogen (H-), methyl (CH ₃ -), , Hydroxy (OH-), carboxyl (COO-), amide-, phenyl-, hydroxyphenyl-, pyrrolidonyl-, caprolactanyl- ), Dimethyl aminopropyl amide-, hydoxyethyl carboxyl-, polyethylene glycol, or polypropylene glycol, n and m are each independently greater than 1 Lt; = n + m < / = 1,000).
(2)

Wherein R ₁ is methyl (CH ₃ -), carboxyl-, hydroxyl (-OH), polyethylene glycol, or polypropylene glycol, and R ₂ is methyl (CH ₃ -), phenyl-, polyethylene glycol, or polypropylene glycol, n and m are each independently an integer greater than 0, and 2? N + m? 10 .)
(Formula 3)

In the above formula (3), R is at least one selected from the group consisting of methyl (CH ₃ -), amino-, epoxy-, alicyclic epoxy-, polyether-, carboxyl-, Wherein n and m are each independently an integer greater than 0, and 2? N + m? 10, to be.) The method according to claim 1, wherein the surfactant is at least one surfactant selected from the group consisting of a nonionic surfactant, an anionic surfactant, a cationic surfactant and a fluorinated surfactant. / RTI > 3. The method of claim 2,
Wherein said nonionic surfactant is selected from the group consisting of alkyl polyglucosides, polyoxyalkylene alkyl ethers, polyoxyalkylene alkyl phenyl ethers, polyoxypropylene alkyl ethers, polyoxypropylene alkyl phenyl ethers, polyoxyethylene / polyoxypropylene copolymer alkyl ethers, Polyoxyethylene / polyoxypropylene copolymerized alkylphenyl ether, polyoxyethylene / polyoxypropylene block copolymer, polyethylene glycol fatty acid ester, polyoxypropylene glycol fatty acid ester, polyethylene / polyoxypropylene glycol copolymerized fatty acid ester, polyoxyethylene sorbitan Fatty acid esters, polyoxypropylene sorbitan fatty acid esters, or polyoxyethylene / polyoxypropylene copolymerized sorbitan fatty acid esters;
Wherein the anionic surfactant is selected from the group consisting of alkyl ether sulfates, alkyl sulfates, alkylbenzenesulfonates, alkylbenzyl sulfates, secondary alkanesulfonates, alpha olefin sulfonates, alkyl sulfosuccinates, alkyl ether phosphates, alkyl phosphates, alkyl benzene phosphates, Or a salt thereof;
Wherein said amphoteric surfactant is alkyl betaine, alkyl glycine betaine, dimethyl dodecyl glycine betaine, or cocamidopropyl betaine;
Wherein said cationic surfactant is selected from the group consisting of alkyl trimethyl ammonium chloride, alkyl benzene trimethyl ammonium chloride, alkyl trimethyl ammonium hydroxide, alkyl benzene trimethyl ammonium hydroxide, alkyl triethyl ammonium chloride, alkyl benzene triethyl ammonium chloride, A hydroxide, or an alkylbenzenetriethylammonium hydroxide;
The fluorosurfactant may be at least one selected from the group consisting of perfluoroalkylcarboxylate, perfluoroalkylsulfonate, perfluoroalkylsulfate, perfluoroalkylphosphate, perfluoroalkylamine salt, perfluoroalkyl quaternary ammonium salt, perfluoroalkylcarboxybetaine, Perfluoropolyether polyoxyethylene, or perfluoropolyether polyoxypropylene) phosphorus oxyphenylene sulfosuccinate, perfluoropolyether polyoxyethylene,
An etching composition for texturing a solar cell single crystal silicon wafer. The etching composition for texturing a solar cell single crystal silicon wafer according to claim 1, wherein the etching composition for texturing further comprises 10 ^-3 to 10 wt% of the saccharide compound. The method of claim 4, wherein the sugar compound is selected from the group consisting of glucose, maltose, mannose, galactose, flutose, sucrose, amylose, polysaccharide, lignin, lectin, xanthan gum, guar gum, cellulose, dimethylaminoethylcellulose But are not limited to, cellulose derivatives such as ethylaminoethylcellulose, ethylhydroxyethylcellulose, methylhydroxyethylcellulose, 4-aminobenzylcellulose, triethylaminoethylcellulose, cyanoethylcellulose, ethylcellulose, methylcellulose, carboxymethylcellulose, carboxyethylcellulose, But are not limited to, ethyl cellulose, hydroxypropyl cellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin,? -Cyclodextrin,? -Cyclodextrin,? -Cyclodextrin, hydroxypropyl -? - cyclodextrin, Dextrin, dextran, sodium dextran sulfate, saponin, glycogen, Mosan, lentinan, progenitor evacuation and texturing etching composition of at least one compound of the solar cell of single crystal silicon wafers each selected from the group consisting of metal salts thereof. The etching composition for texturing a solar cell single crystal silicon wafer according to claim 1, wherein the etching composition for texturing further comprises 10 ^-5 to 10 wt% of a carboxyl compound. 7. The composition of claim 6 wherein said carboxyl compound is selected from the group consisting of amino acids, ascorbic acid, retinoic acid, acetic acid, propionic acid, butylic acid, caprylic acid, capric acid, oxalic acid, malonic acid, maleic acid, adipic acid, phthalic acid, The present invention relates to a method for texturing a solar cell monocrystalline silicon wafer which is at least one compound selected from the group consisting of malic acid, citric acid, tartaric acid, lactic acid, formic acid, benzoic acid, lauric acid, myristic acid, stearic acid, linolenic acid, arachidonic acid, / RTI > The etching composition for texturing a solar cell single crystal silicon wafer according to claim 1, wherein the etching composition for texturing further comprises 10 ^-5 to 10% by weight of an amine compound. The method of claim 8, wherein the amine compound is selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, monopropylamine, dipropylamine, monoisopropylamine, diisopropylamine, ethylenediamine, But are not limited to, hydroxylamine, N, N-dimethylhydroxyamine, 2-ethylaminoethanol, 2- (2-aminoethylamino) ethanol, cyclohexylamine, dicyclohexylamine, benzylamine, dibenzylamine, And examples thereof include amines, dimethylbenzylamine, pyrrole, pyrrolidine, pyridine, piperidine, piperidone, pyrrolidone, methylpyrrolidone, vinylpyrrolidone, vinylmethylpyrrolidone, caprolactam, vinylcaprolactam, imide Wherein the composition is at least one compound selected from the group consisting of zirconium, zirconium, zoledinone, tetrahydrofuran, and aniline. The etching composition for texturing a solar cell single crystal silicon wafer according to claim 1, wherein the etching composition for texturing further comprises 10 ^-3 to 10% by weight of a water-soluble solvent. The etching composition according to claim 10, wherein the water-soluble solvent is at least one solvent selected from the group consisting of alcohols, glycols, carbonates, esters, lactones, carbazoles and aromatic solvents. 12. The method of claim 11,
The alcohol is preferably selected from the group consisting of butanol, isobutanol, t-butanol, nucleic acid, iso-nucleic acid, 2-ethylhexanol, butanediol, pentanediol, hexanediol, cyclopentanediol, cyclohexanediol, cyclohexanetriol, Triol;
Wherein the glycol is at least one selected from the group consisting of methylene glycol, ethylene glycol, propylene glycol, isopropylene glycol, butylene glycol, isobutylene glycol, hexylene glycol, ethylhexylene glycol, methylene diglycol, ethylene diglycol, propylene diglycol, Butylene glycol, ethylene glycol, propylene glycol, butylene glycol, ethylene glycol, propylene glycol, glycol, butylene diol glycol, isobutylene di glycol, hexylene diglycol, ethylhexylene diglycol, methylene tri glycol, ethylene triglycol, Ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, pentaethylene glycol, hexaethylene glycol, polyethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, tetrapropylene Glycol, pentapropylene glycol, hexapropylene glycol, or Lee and propylene glycol;
Wherein said carbonate is dimethyl carbonate, methyl ethyl carbonate, diethyl carbonate, ethylene carbonate, or propylene carbonate;
Wherein said ester is ethyl lactate, propyl lactate, butyl lactate, ethyl propionate, propyl propionate, butyl propionate, or propylene glycol methyl ether acetate;
Said lactone is butyrolactone or caprolactone;
Wherein said carbazole is N-vinylcarbazole or N-acryloylcarbazole;
Wherein the aromatic solvent is selected from the group consisting of benzyl glycol, benzyldiglycol, benzyltriglycol, benzyltetraglycol, phenylglycol, phenyldiglycol, phenyltriglycol, phenyltetraglycol, benzenesulfonate or benzylsulphate
An etching composition for texturing a solar cell single crystal silicon wafer. The etching composition for texturing a solar cell single crystal silicon wafer according to claim 1, wherein the etching composition for texturing further comprises 10 ^-5 to 10% by weight of an inorganic compound. The method of claim 13, wherein the inorganic compound is selected from the group consisting of sodium silicate, potassium silicate, lithium silicate, silicate oxide, tetrasodium silicate, hexasodium silicate, disodium silicate, silica, sodium carbonate, sodium bicarbonate, calcium carbonate, Sodium chloride, potassium chloride, magnesium chloride, sodium fluoride, calcium fluoride, potassium fluoride, sodium phosphate, potassium phosphate, testapotassium pyrophosphate, sodium testafiophosphate, sodium sulfate, calcium sulfate, and magnesium sulfate Wherein at least one kind of compound selected from the group consisting of silicon oxide and silicon oxide is used. 0.1 to 20 parts by weight of at least one alkaline compound selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium and tetrahydroxyethylammonium in 100 parts by weight of ion-exchanged water, 14. The method of claim 1, wherein the etching composition is selected from the group consisting of: And
And a step of texturing a single crystal silicon wafer for a solar cell by immersing, spraying or dipping and spraying a single crystal silicon wafer for a solar cell at a temperature of 70 to 90 DEG C for 1 to 30 minutes in the mixed solution
Texturing method of solar cell monocrystalline silicon wafer. A single crystal silicon wafer for a solar cell, wherein a pyramid having a size of 0.1 탆 to 10 탆 is formed on the surface by etching by the texturing method according to claim 15. A cell or module device for a solar cell comprising the single crystal silicon wafer of claim 16.

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