CN109295498A - A kind of etching method of monocrystalline silicon piece - Google Patents
A kind of etching method of monocrystalline silicon piece Download PDFInfo
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- CN109295498A CN109295498A CN201811265407.1A CN201811265407A CN109295498A CN 109295498 A CN109295498 A CN 109295498A CN 201811265407 A CN201811265407 A CN 201811265407A CN 109295498 A CN109295498 A CN 109295498A
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 52
- 238000005530 etching Methods 0.000 title claims abstract description 41
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000008367 deionised water Substances 0.000 claims abstract description 30
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 30
- 210000002268 wool Anatomy 0.000 claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 235000008216 herbs Nutrition 0.000 claims abstract description 25
- 239000004094 surface-active agent Substances 0.000 claims abstract description 20
- 230000000996 additive effect Effects 0.000 claims abstract description 11
- 239000000654 additive Substances 0.000 claims abstract description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 25
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 7
- 229960004756 ethanol Drugs 0.000 claims description 7
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims description 6
- 235000010234 sodium benzoate Nutrition 0.000 claims description 6
- 239000004299 sodium benzoate Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 235000010323 ascorbic acid Nutrition 0.000 claims description 2
- 239000011668 ascorbic acid Substances 0.000 claims description 2
- 229960005070 ascorbic acid Drugs 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229960003885 sodium benzoate Drugs 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 27
- 239000007788 liquid Substances 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- 231100001261 hazardous Toxicity 0.000 abstract description 2
- 230000003993 interaction Effects 0.000 abstract description 2
- 231100000252 nontoxic Toxicity 0.000 abstract description 2
- 230000003000 nontoxic effect Effects 0.000 abstract description 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 7
- 230000036632 reaction speed Effects 0.000 description 7
- 239000000047 product Substances 0.000 description 5
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 4
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 238000002604 ultrasonography Methods 0.000 description 4
- GDSOZVZXVXTJMI-SNAWJCMRSA-N (e)-1-methylbut-1-ene-1,2,4-tricarboxylic acid Chemical compound OC(=O)C(/C)=C(C(O)=O)\CCC(O)=O GDSOZVZXVXTJMI-SNAWJCMRSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 238000001579 optical reflectometry Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZZZCUOFIHGPKAK-UHFFFAOYSA-N D-erythro-ascorbic acid Natural products OCC1OC(=O)C(O)=C1O ZZZCUOFIHGPKAK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910020489 SiO3 Inorganic materials 0.000 description 1
- 229930003268 Vitamin C Natural products 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000002837 carbocyclic group Chemical group 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- -1 sorbierite Chemical compound 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L sulfate group Chemical group S(=O)(=O)([O-])[O-] QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 235000019154 vitamin C Nutrition 0.000 description 1
- 239000011718 vitamin C Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of etching method of monocrystalline silicon piece, the etching method of the monocrystalline silicon piece is the following steps are included: clean the surface of monocrystalline silicon piece；Deionized water is added into reactor, and is heated, sequentially adds sodium hydroxide, flocking additive, surfactant and is mixed evenly, silicon wafer is put into reactor and is reacted, to by silicon chip extracting, be cleaned, dried after reaction.The invention has the benefit that a kind of etching method of monocrystalline silicon piece of the present invention is easy to operate, both surfactant PVP and SDS interaction joined in Woolen-making liquid, it is lower to reach a kind of luminance factor, the preferable making herbs into wool effect of defoaming effect；In addition, raw material used in the present invention is nontoxic, pollution-free raw material, it is non-hazardous to human body and environment, and the lower suitable large-scale production of cost of manufacture.
Description
Technical field
The present invention relates to the preparation fields of monocrystalline silicon piece, and in particular to a kind of etching method of monocrystalline silicon piece.
Background technique
Solar energy is a kind of typical clean energy resource, and not only reserves are huge, and can be regenerated.China is in knot at present
Structure transition, industrial upgrading critical period, under the guide of construction " beautiful China " target, the energy, environment, ecological problem are more next
It is more taken seriously, therefore the utilization of solar energy possesses wide development space in China.Many institute's Sundays, shape of the solar energy to radiate
Formula reaches the earth, and wherein most energy is difficult to be used directly, and must be converted into other by certain conversion " medium "
The energy of form.The forbidden bandwidth of monocrystalline silicon is 1.1ev, and the full spectrum that sunlight theoretically may be implemented absorbs, but smooth silicon
The reflectivity on piece surface is higher, and most of solar energy is made to be wasted, and therefore, reduces the sun light reflectivity of silicon chip surface, improves
The utilization efficiency of incident sunlight is the project for being worth research.
Summary of the invention
Make that monocrystalline silicon surface is low to sun light reflectivity, monocrystalline silicon of good absorption effect the object of the present invention is to provide a kind of
The method of surface treatment.
The purpose of the present invention is achieved through the following technical solutions:
A kind of etching method of monocrystalline silicon piece, comprising the following steps:
(1) surface of monocrystalline silicon piece is cleaned；
(2) deionized water is added into reactor, and is heated, sodium hydroxide, flocking additive, table are sequentially added
Face activating agent is mixed evenly, and silicon wafer is put into reactor and is reacted, to by silicon chip extracting, carry out clear after reaction
It washes, dry.
Further, in step (1): the cleaning of monocrystalline silicon surface are as follows: monocrystalline silicon is put into ethanol solution and is cleaned by ultrasonic
8-12min, then monocrystalline silicon is put into deionized water and is cleaned by ultrasonic 8-12min.Monocrystalline silicon is put into ethanol solution ultrasonic
It after cleaning, is rinsed with deionized water, places into deionized water and be cleaned by ultrasonic.
Further, in step (2), the flocking additive is sorbierite, ascorbic acid, sodium benzoate and anhydrous second
Alcohol.Flocking additive refers to during the process for etching of monocrystaline silicon solar cell, added with conducive to reaction result and product
The chemical assistant of performance.
In silicon wafer wool making production process, solution failure is the basic reason of production technology fluctuation, and the reason of failure is anti-
The continuous consumption of sodium hydroxide and Na during answering2SiO3Be continuously generated, lead to the reduction of reactant-OH concentration, and silicon wafer table
Face can not obtain enough exposure rates with it, and since reaction is in 80-90 DEG C of high temperature or so progress, often occur acute
Strong reaction generates a large amount of bubble, keeps resulting flannelette unsatisfactory.Flocking additive contains the surfactant of specific function,
Its addition can improve the wettability of Woolen-making liquid and silicon chip surface, and flocking additive to OH-ion in corrosive liquid from corrosion
Liquid has buffer function to the transport process of reaction interface, so that when high-volume corrosion processing monocrystalline silicon pyramid flannelette, solution
Middle NaOH content has wider processing range, is conducive to the stability for improving Product Process processing quality.
Further, in step (2), the surfactant is the mixture of PVP and SDS.The addition of surfactant
The surface tension that Woolen-making liquid can be reduced improves the wettability of silicon wafer, and bubble hydrogen is easier to be desorbed from silicon chip surface, surfactant
Concentration is higher, bubble is finer and closely woven, defoaming effect is better, but the addition of surfactant can reduce the rate of reaction, concentration
The progress of reaction can even be inhibited when excessively high.
Further, in step (2), when the heating temperature of deionized water reaches 80 DEG C, sequentially add sodium hydroxide,
Flocking additive, surfactant.
It is substantially the adsorption and de-adsorption process of various molecules and ion in the effect that silicon chip surface is corroded, reaction
Raw material need be replenished in time and react by-product needs be transported in time, these movement processes need stablize and abundance
Ability supply, this is also exactly that the corrosion process of room temperature lower silicon slice is difficult the reason of carrying out.Temperature to the influential effect of making herbs into wool very
Important, the speed that temperature crosses low reaction is slower, can generate more gap during making herbs into wool, uniformity coefficient is poor, Jin Erzao
It is higher at reflectivity；If temperature is excessively high, reaction rate is also accelerated therewith, since corrosion process becomes acutely, the bubble of generation
Increase, can also improve its reflectivity, further, since the too fast pyramid structure quilt for causing to be formed before silicon chip surface of reaction speed
Corrode again, keep its structure imperfect, this phenomenon can also be such that reflectivity increases.
Further, in step (2), sodium hydroxide is added in deionized water, the mass fraction of gained sodium hydroxide is
1.4%-1.6%.
It is one of reactant that sodium hydroxide, which provides hydroxide ion, and the hydroxide ion in solution only reaches certain
Concentration just can guarantee that sufficiently large probability is adsorbed on silicon chip surface, participate in pyramidal corrosion process, hydroxide ion concentration
It is lower, it reacts also relatively slow, causes pyramidal undersized, hydroxide ion is caused to be gathered at pinnacle of a pagoda, without enough
The concentration pinnacle of a pagoda spreading to bottom, and then formed before causing continue to be etched into and collapse shape.
Further, in step (2), silicon wafer is put into reactor, takes out silicon wafer after reacting 16-18min.
Further, in step (2), the cleaning, drying are as follows: dehydrated alcohol and deionized water cleaning silicon chip are successively used,
Again in 25-35 DEG C of at a temperature of drying.
Further, the weight ratio of the surfactant PVP and SDS is 1:2.PVP is a kind of polymer with carbocyclic ring,
Mutually polymerization occurs when the amount of PVP in solution increases, thus the influence for reaction rate is relatively stable, the defoaming effect of PVP
Fruit is relatively good, and SDS is a kind of carbon backbone with sulfate group, and additive effect is more obvious, but its defoaming effect ratio
It is poor, therefore the relationship of the influence and concentration for reaction rate is closer.
The invention has the benefit that a kind of etching method of monocrystalline silicon piece of the present invention is easy to operate, in Woolen-making liquid
In joined both surfactant PVP and SDS interaction, reach that a kind of luminance factor is lower, and defoaming effect is preferably made
Suede effect；In addition, raw material used in the present invention is nontoxic, pollution-free raw material, and it is non-hazardous to human body and environment, it is suitble to large size
Production.
Detailed description of the invention
Fig. 1 is the making herbs into wool effect of the etching method of monocrystalline silicon piece described in embodiment three and the making herbs into wool of one etching method of comparative example
The comparing result figure of effect；
Fig. 2 is the making herbs into wool effect of the etching method of monocrystalline silicon piece described in example IV and the making herbs into wool of two etching method of comparative example
The comparing result figure of effect；
Fig. 3 is the making herbs into wool effect of the etching method of monocrystalline silicon piece described in embodiment five and the making herbs into wool of three etching method of comparative example
The comparing result figure of effect.
Specific embodiment
Embodiment one
A kind of etching method of monocrystalline silicon piece, comprising the following steps:
(1) surface of monocrystalline silicon piece is cleaned；
(2) deionized water is added into reactor, and is heated, sodium hydroxide, flocking additive, table are sequentially added
Face activating agent is mixed evenly, and silicon wafer is put into reactor and is reacted, to by silicon chip extracting, carry out clear after reaction
It washes, dry.
Embodiment two
A kind of etching method of monocrystalline silicon piece, comprising the following steps:
(1) monocrystalline silicon piece is put into ethanol solution and is cleaned by ultrasonic 8min, then monocrystalline silicon is put into ultrasound in deionized water
Clean 8min；
(2) deionized water is added into reactor, and is heated, sodium hydroxide, sorbierite, Vitamin C are sequentially added
The mixture of acid, sodium benzoate, dehydrated alcohol and PVP and SDS are simultaneously mixed evenly, and silicon wafer is put into reactor and is carried out instead
It answers, to by silicon chip extracting, be cleaned, dried after reaction.
Embodiment three
A kind of etching method of monocrystalline silicon piece, comprising the following steps:
(1) monocrystalline silicon piece is put into ethanol solution and is cleaned by ultrasonic 10min, then monocrystalline silicon is put into ultrasound in deionized water
Clean 10min；
(2) deionized water is added into reactor, when the temperature of deionized water reaches 80 DEG C, sequentially adds hydroxide
(after sodium hydroxide is added into deionized water, 1.4%) mass fraction of obtained sodium hydroxide solution is, sorbierite, resists sodium
The mixture of bad hematic acid, sodium benzoate, dehydrated alcohol and PVP and SDS (weight ratio of surfactant PVP and SDS are 1:2) are simultaneously
It is mixed evenly, silicon wafer is put into after carrying out reaction 17min in reactor, by silicon chip extracting, with dehydrated alcohol and deionization
Water cleaning silicon chip, then in 25 DEG C of at a temperature of drying.
Example IV
A kind of etching method of monocrystalline silicon piece, comprising the following steps:
(1) monocrystalline silicon piece is put into ethanol solution and is cleaned by ultrasonic 12min, then monocrystalline silicon is put into ultrasound in deionized water
Clean 12min；
(2) deionized water is added into reactor, when the temperature of deionized water reaches 80 DEG C, sequentially adds hydroxide
(after sodium hydroxide is added into deionized water, the mass fraction of obtained sodium hydroxide solution is 1.6%) sorbierite, anti-bad to sodium
The mixture (weight ratio of surfactant PVP and SDS are 1:2) of hematic acid, sodium benzoate, dehydrated alcohol and PVP and SDS are simultaneously
It is mixed evenly, silicon wafer is put into after reacting 18min in reactor, it is clear with dehydrated alcohol and deionized water by silicon chip extracting
Silicon wafer is washed, then in 30 DEG C of at a temperature of drying.
Embodiment five
A kind of etching method of monocrystalline silicon piece, comprising the following steps:
(1) monocrystalline silicon piece is put into ethanol solution and is cleaned by ultrasonic 12min, then monocrystalline silicon is put into ultrasound in deionized water
Clean 12min；
(2) deionized water is added into reactor, when the temperature of deionized water reaches 80 DEG C, sequentially adds hydroxide
(after sodium hydroxide is added into deionized water, the mass fraction of obtained sodium hydroxide solution is 1.5%) sorbierite, anti-bad to sodium
The mixture (weight ratio of surfactant PVP and SDS are 1:2) of hematic acid, sodium benzoate, dehydrated alcohol and PVP and SDS are simultaneously
It is mixed evenly, silicon wafer is put into after reacting 16min in reactor, it is clear with dehydrated alcohol and deionized water by silicon chip extracting
Silicon wafer is washed, then in 35 DEG C of at a temperature of drying.
The making herbs into wool effect of the etching method of monocrystalline silicon piece described in embodiment three and the making herbs into wool effect of one etching method of comparative example
Comparing result it is as shown in Figure 1；(etching method of comparative example one and the etching method of embodiment three, except the reaction time is different,
It is remaining all the same)
It will be seen from figure 1 that under the same conditions, when reacted between when being 17min, obtained making herbs into wool effect is best, i.e.,
The reflectivity of sunlight is minimum；When shorter between when reacted, i.e., when the making herbs into wool time is 14min, the reflectivity of sunlight is higher than
The reflectivity of sunlight when reaction time is 17min；Because in corrosion process, hydroxyl is first and in high surface position
Silicon atom reacted, and surface-active is not easy to form pyramid compared with the region at bottom in initial reaction stage, so between when reacted
When falling short of, the pyramidal surface formed during making herbs into wool is sufficiently complete, and the reflectivity of sunlight is relatively high；
When long between when reacted, i.e. the corrosion of silicon chip surface continues to extend, the gold formed during making herbs into wool in this way
The size of word tower can become larger, and uniform, the lesser pyramid of size that early period is formed can continue burn into and scabble, towards melting
The trend development of Great Pyramid is synthesized, and the sun light reflectivity of making herbs into wool product is caused to rise.
The making herbs into wool effect of the etching method of monocrystalline silicon piece described in example IV and the making herbs into wool effect of two etching method of comparative example
Comparing result it is as shown in Figure 2；(etching method of comparative example two and the etching method of example IV, except reaction temperature is different,
It is remaining all the same)
From fig. 2 it can be seen that since reaction temperature is lower, reaction speed is slower, is making when reaction temperature is 78 DEG C
Pyramid also not molding completely at the end of reaction during suede, there are more holes, and uniformity coefficient is poor, cause to reflect
Rate is higher；When reaction temperature is 80 DEG C, molecular thermalmotion aggravates since temperature raises, and reaction speed is also accelerated therewith, golden word
Tower-shaped looks become uniformly, and hole fades away, and then reflectivity also reduces, when temperature is higher than 80 DEG C, since corrosion process becomes
Must be more violent, the bubble of generation also increases, and cause pyramid to become large-sized, and solar irradiation is in large-sized pyramid glazing
The number of refraction can be reduced, and refractive index is caused to improve, further, since temperature is excessively high, reaction speed is too fast, be formed before causing
Pyramid structure is corroded again, makes the imperfect raising for further causing reflectivity of its structure；I.e. under equal conditions, instead
Answer temperature be 80 DEG C when, obtained making herbs into wool effect is best, and the reflectivity of sunlight is minimum.
The making herbs into wool effect of the etching method of monocrystalline silicon piece described in embodiment five and the making herbs into wool effect of three etching method of comparative example
Comparing result it is as shown in Figure 3；(etching method of the etching method of comparative example three and embodiment five, except surfactant PVP and
The weight ratio of SDS is different, remaining is all the same)
From figure 3, it can be seen that reaction speed ratio is very fast when surfactant SDS and the weight ratio of PVP are 1:1,
The generation speed ratio of bubble is very fast, causes a large amount of bubble to be attached to the further progress that silicon chip surface hinders reaction, results in
Although the pyramid that making herbs into wool is formed is complete, size is uneven, and there are some gaps and not formed pyramidion；When
When surfactant SDS and the weight ratio of PVP are 2:1, reaction speed is than very fast, and defoaming effect is also more satisfactory, pyramid
Size and uniformity coefficient be significantly improved, gap is also smaller；And when the weight ratio of surfactant SDS and PVP are
When 1:2, defoaming effect is although good, and reaction speed is slow, although pyramidal size is also improved, but due to gold
Word tower, which does not corrode completely also, makes that its pattern is imperfect, corner angle fuzzy similar to the hemispherical of cluster leads to the anti-of its sunlight
Penetrate that rate is higher, i.e., when the weight ratio of surface active agent SDS and PVP are 2:1, making herbs into wool effect is best, obtains
Making herbs into wool product sunlight reflectivity it is minimum.
The present invention is not limited to above-mentioned preferred forms, anyone can show that other are various under the inspiration of the present invention
The product of form, however, make any variation in its details, it is all that there is technical solution identical or similar to the present application,
It is within the scope of the present invention.
Claims (9)
1. a kind of etching method of monocrystalline silicon piece, which comprises the following steps:
(1) surface of monocrystalline silicon piece is cleaned；
(2) deionized water is added into reactor, and is heated, sodium hydroxide, flocking additive, surface work are sequentially added
Property agent is mixed evenly, and silicon wafer is put into reactor and is reacted, to by silicon chip extracting, be cleaned after reaction,
Drying.
2. a kind of etching method of monocrystalline silicon piece according to claim 1, which is characterized in that in step (1): monocrystalline silicon surface
Cleaning are as follows: monocrystalline silicon piece is put into ethanol solution and is cleaned by ultrasonic 8-12min, then by monocrystalline silicon be put into deionized water surpass
Sound cleans 8-12min.
3. a kind of etching method of monocrystalline silicon piece according to claim 1, which is characterized in that in step (2), the making herbs into wool adds
Adding agent is sorbierite, ascorbic acid, sodium benzoate and dehydrated alcohol.
4. a kind of etching method of monocrystalline silicon piece according to claim 1, which is characterized in that in step (2), the surface is living
Property agent be PVP and SDS mixture.
5. a kind of etching method of monocrystalline silicon piece according to claim 1, which is characterized in that in step (2), to deionized water
Heating temperature when reaching 80 DEG C, sequentially add sodium hydroxide, flocking additive, surfactant.
6. a kind of etching method of monocrystalline silicon piece according to claim 1, which is characterized in that in step (2), by sodium hydroxide
It is added in deionized water, the mass fraction of gained sodium hydroxide is 1.4%-1.6%.
7. a kind of etching method of monocrystalline silicon piece according to claim 1, which is characterized in that in step (2), silicon wafer is put into
In reactor, silicon wafer is taken out after reacting 16-18min.
8. a kind of etching method of monocrystalline silicon piece according to claim 1, which is characterized in that in step (2), the cleaning,
It is dry are as follows: successively to use dehydrated alcohol and deionized water cleaning silicon chip, then in 25-35 DEG C of at a temperature of drying.
9. a kind of etching method of monocrystalline silicon piece according to claim 4, which is characterized in that the surfactant PVP and
The weight ratio of SDS is 1:2.
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