CN105895714A - Smooth modification liquid, smooth modification method, heterojunction solar cell silicon wafer and heterojunction solar cell - Google Patents
Smooth modification liquid, smooth modification method, heterojunction solar cell silicon wafer and heterojunction solar cell Download PDFInfo
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- CN105895714A CN105895714A CN201610457457.4A CN201610457457A CN105895714A CN 105895714 A CN105895714 A CN 105895714A CN 201610457457 A CN201610457457 A CN 201610457457A CN 105895714 A CN105895714 A CN 105895714A
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- heterojunction solar
- solar battery
- silicon chip
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- solar cell
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 76
- 239000010703 silicon Substances 0.000 title claims abstract description 76
- 239000007788 liquid Substances 0.000 title claims abstract description 38
- 230000004048 modification Effects 0.000 title claims abstract description 14
- 238000012986 modification Methods 0.000 title claims abstract description 14
- 238000002715 modification method Methods 0.000 title abstract 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 19
- 239000002253 acid Substances 0.000 claims description 16
- 238000007654 immersion Methods 0.000 claims description 8
- 238000009499 grossing Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000005034 decoration Methods 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 abstract 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 231100001261 hazardous Toxicity 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to the field of a solar cell, and specifically discloses smooth modification liquid for pyramid suede of a heterojunction solar cell. The smooth modification liquid comprises ozone, hydrogen fluoride and water. The concentration of the ozone is 10-30mg/L. According to the smooth modification liquid, the sharp spires and bottoms of the pyramid suede are enabled to be rounded by matching the ozone with the hydrofluoric acid. Moreover, the surface roughness of the pyramid suede is reduced; follow-up intrinsic silicon thin film can be deposited more uniformly; and the performance of the heterojunction solar cell is improved. The invention also discloses a smooth modification method for the pyramid suede of the heterojunction solar cell, and a heterojunction solar cell silicon wafer and the heterojunction solar cell containing the heterojunction solar cell silicon wafer, wherein the silicon wafer and the cell are obtained by the smooth modification method.
Description
Technical field
The present invention relates to area of solar cell, particularly relate to a kind of smooth decorating liquid and smooth method of modifying
And heterojunction solar battery silicon chip and heterojunction solar battery.
Background technology
Heterojunction solar battery (HIT battery) is by adding between doped amorphous silicon layer and crystal silicon chip
Constructed by intrinsic layer.Heterojunction solar battery had both had the high efficiency of crystal silicon solar energy battery and height is steady
Qualitative, simultaneously because energy consumption is little, technique is relatively easy, temperature characterisitic is more preferable, the most also can have higher
Output.Receive much concern in recent years, one of main development direction having become as solaode.
At present, in monocrystalline silicon battery preparation technology, typically monocrystalline silicon piece is carried out making herbs into wool process, obtain gold word
Tower matte.In heterojunction solar battery preparation process, need deposition intrinsic silicon on pyramid matte thin
Film layer, but it is all that intrinsic silicon thin layer easily produces at the bottom of this pyramid matte, its sharp-pointed pinnacle of a pagoda and tower
The position of raw defect, and then affect the performance of heterojunction solar battery.
Therefore, need badly pyramid matte is smoothed.
Summary of the invention
Based on this, it is necessary to the problem not being suitable for heterojunction solar battery for existing pyramid matte,
A kind of smooth decorating liquid being smoothed pyramid matte is provided.
A kind of smooth decorating liquid of the pyramid matte for heterojunction solar battery silicon chip, including ozone,
Fluohydric acid gas and water；The concentration of described ozone is 10～30mg/L.
Above-mentioned smooth decorating liquid, uses ozone to coordinate with Fluohydric acid., can make the sharp-pointed pinnacle of a pagoda of pyramid matte
With become mellow and full at the bottom of tower, make the surface roughness of pyramid matte reduce, thus follow-up simultaneously
Levy silicon deposited film more uniform, thus be conducive to improving the performance of heterojunction solar battery.The present invention's
In smooth decorating liquid, the concentration of ozone is relatively low, and end product is oxygen, environmentally friendly, will not be to ecological ring
Border impacts.It addition, the ozone that concentration is relatively low, operator will not be caused potentially hazardous.Also have
It is exactly to use the ozone of low concentration, can effectively reduce the cost of chemical drugs.
Wherein in an embodiment, the concentration of described ozone is 15～20mg/L.
Wherein in an embodiment, the concentration of described fluohydric acid gas is 0.4～1wt%.
Wherein in an embodiment, described water is deionized water.
Wherein in an embodiment, described smooth decorating liquid by Ozone Water and Fluohydric acid. according to volume ratio
50～100:1 configurations form.
Present invention also offers the smooth modification side of the pyramid matte of a kind of heterojunction solar battery silicon chip
Method.
The smooth method of modifying of the pyramid matte of a kind of heterojunction solar battery silicon chip, comprises the steps:
The heterojunction solar battery silicon chip with pyramid matte is placed in smooth modification provided by the present invention
Liquid soaks.
The smooth method of modifying of the pyramid matte of above-mentioned heterojunction solar battery silicon chip, owing to using this
Bright provided smooth decorating liquid, so the golden word of heterojunction solar battery silicon chip after smooth modification can be made
Become mellow and full at the bottom of the sharp-pointed pinnacle of a pagoda of tower matte and tower, make the surface roughness of pyramid matte reduce simultaneously,
Thus follow-up intrinsic silicon thin film deposition is more uniform, thus be conducive to improving heterojunction solar battery
Performance.
Wherein in an embodiment, the temperature of described immersion is 15～25 DEG C.
Wherein in an embodiment, the time of described immersion is 300～600s.
Present invention also offers a kind of heterojunction solar battery silicon chip.
A kind of heterojunction solar battery silicon chip, described heterojunction solar battery silicon chip is by provided by the present invention
Smooth method of modifying obtain.
Above-mentioned heterojunction solar battery silicon chip, owing to using smooth method of modifying provided by the present invention, from
And obtain silicon chip surface roughness and reduce, matte smooths mellow and full, and follow-up intrinsic silicon thin film deposition is more
Uniformly, thus be conducive to improve heterojunction solar battery performance.
Present invention also offers a kind of heterojunction solar battery.
A kind of heterojunction solar battery, including heterojunction solar battery silicon chip provided by the present invention.
Above-mentioned heterojunction solar battery silicon chip, owing to using heterojunction solar battery provided by the present invention
Silicon chip, easily forms intrinsic silicon thin layer, reduces the preparation difficulty of intrinsic layer, improve the quality of intrinsic layer,
And then improve the performance of heterojunction solar battery.
Accompanying drawing explanation
Fig. 1 is the SEM figure of the silicon chip before smooth modification.
Fig. 2 is the SEM figure after the silicon chip in Fig. 1 smooths modification.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with being embodied as
Mode, is further elaborated to the present invention.Should be appreciated that detailed description of the invention described herein
Only in order to explain the present invention, it is not intended to limit the present invention.
Unless otherwise defined, all of technology used herein and scientific terminology and the technology belonging to the present invention
The implication that the technical staff in field is generally understood that is identical.The art used the most in the description of the invention
Language is intended merely to describe the purpose of specific embodiment, it is not intended that in limiting the present invention.Used herein
Term " and/or " include the arbitrary and all of combination of one or more relevant Listed Items.
A kind of smooth decorating liquid, for the pyramid matte of heterojunction solar battery silicon chip, it include ozone,
Fluohydric acid gas and water；The concentration of ozone is 10～30mg/L.
Ozone in smooth decorating liquid, decomposites elemental oxygen in water, and silica metaplasia is become oxygen rapidly by elemental oxygen
SiClx film；And fluohydric acid gas generates Fluohydric acid. in water, silicon oxide film is corroded by Fluohydric acid.；Silicon chip like this
Surface ceaselessly generates oxide-film and is the most ceaselessly corroded.The oxide-film that ozone is formed, can make silicon chip surface
More smooth, thus reach smooth effect.
It is highly preferred that the concentration of ozone is 15～20mg/L.So can improve the silicon chip after modification further
Smooth effect.
Preferably, the concentration of fluohydric acid gas is 0.4～1wt%.Reaction rate so can be made to control in suitable scope
In, thus improve smooth effect further.
Preferably, water is deionized water.So can improve ozone stability in water, thus improve flat
The performance of sliding decorating liquid.
Preferably, the smooth decorating liquid of the present invention is configured according to volume ratio 50～100:1 with Fluohydric acid. by Ozone Water
Form.Wherein Ozone Water and Fluohydric acid. are industrially easier to obtain, and additionally can realize smooth decorating liquid
Now with the current, such that it is able to improve the performance of smooth decorating liquid further.
Above-mentioned smooth decorating liquid, uses ozone to coordinate with Fluohydric acid., can make the sharp-pointed pinnacle of a pagoda of pyramid matte
With become mellow and full at the bottom of tower, make the surface roughness of pyramid matte reduce, thus follow-up simultaneously
Levy silicon deposited film more uniform, thus be conducive to improving the performance of heterojunction solar battery.The present invention's
In smooth decorating liquid, the concentration of ozone is relatively low, and end product is oxygen, environmentally friendly, will not be to ecological ring
Border impacts.It addition, the ozone that concentration is relatively low, operator will not be caused potentially hazardous.Also have
It is exactly to use the ozone of low concentration, can effectively reduce the cost of chemical drugs.
Present invention also offers the smooth modification side of the pyramid matte of a kind of heterojunction solar battery silicon chip
Method.
The smooth method of modifying of the pyramid matte of a kind of heterojunction solar battery silicon chip, comprises the steps:
The heterojunction solar battery silicon chip with pyramid matte is placed in smooth modification provided by the present invention
Liquid soaks.
Wherein, the heterojunction solar battery silicon chip with pyramid matte obtains the most as follows:
First go damage to process heterojunction solar battery silicon chip, specifically, use the KOH of 5wt%～8wt%
Or NaOH solution, it is heated to 75 DEG C～85 DEG C, silicon chip is put into immersion 120～180s.Then to hetero-junctions
Silicon chip of solar cell carries out making herbs into wool, specifically, uses KOH or NaOH of 2wt%～8wt% molten
Liquid, is heated to 75 DEG C～85 DEG C, and adds a certain amount of flocking additive, and silicon chip is put into immersion 600～1800s；
I.e. form pyramid matte.Those skilled in the art can be by the regulation concentration of alkali liquor and flocking additive
Consumption, regulates obtained pyramid size and uniformity.
Usually, the heterojunction solar battery silicon chip with pyramid matte is put in the gaily decorated basket, then will
The gaily decorated basket enters in smooth decorating liquid and soaks, soak complete after the gaily decorated basket is proposed from smooth decorating liquid.
Preferably, the temperature of immersion is 15～25 DEG C, and the temperature smoothing decorating liquid when namely soaking is
15～25 DEG C.Reaction rate so can be made to control in the range of suitably, thus improve smooth effect further.
Preferably, the time of immersion is 300～600s.So can improve smooth effect further, and
Good light is kept to fall into effect.
Soak complete after, heterojunction solar battery silicon chip is taken out from smooth decorating liquid, then washes
Dry.
Present invention also offers a kind of heterojunction solar battery silicon chip.
A kind of heterojunction solar battery silicon chip, described heterojunction solar battery silicon chip is by provided by the present invention
Smooth method of modifying obtain.
Above-mentioned heterojunction solar battery silicon chip, owing to using smooth method of modifying provided by the present invention, from
And obtain silicon chip surface roughness and reduce, matte smooths mellow and full, and follow-up intrinsic silicon thin film deposition is more
Uniformly, thus be conducive to improve heterojunction solar battery performance.
Present invention also offers a kind of heterojunction solar battery.
A kind of heterojunction solar battery, including heterojunction solar battery silicon chip provided by the present invention.
Usually, heterojunction solar battery also include being sequentially located at silicon chip one side surface the first intrinsic layer,
First doped amorphous silicon layer, the first transparency conducting layer, the first electrode；And it is sequentially located at silicon chip opposite side table
Second intrinsic layer in face, the second doped amorphous silicon layer, the second transparency conducting layer, the second electrode.Above-mentioned functions
Layer all can use structure known in those skilled in the art or material, does not repeats them here！
Certainly, the heterojunction solar battery of the present invention is not limited to said structure, it is also possible to according to reality
Situation, is not provided with the second intrinsic layer, the second doped amorphous silicon layer etc..
Above-mentioned heterojunction solar battery silicon chip, owing to using heterojunction solar battery provided by the present invention
Silicon chip, easily forms intrinsic silicon thin layer, reduces the preparation difficulty of intrinsic layer, improve the quality of intrinsic layer,
And then improve the performance of heterojunction solar battery.
Below in conjunction with specific embodiment, the present invention is further elaborated.
Embodiment 1
By the monocrystalline silicon piece of 200 μ m-thick, the 7wt%KOH solution of 80 DEG C soaks 160s, then takes
Go out, place in 85 DEG C of Woolen-making liquids (5.6wt%KOH+0.4wt% flocking additive TAD60), soak
Take out after 1500s and wash.Obtain the heterojunction solar battery silicon chip A1 with pyramid matte.
By the electrolysis ozone water that concentration is 15mg/L and the Fluohydric acid. 100:1 by volume that concentration is 48wt%
Mixing, forms smooth decorating liquid.
To have the heterojunction solar battery silicon chip A1 of pyramid matte, soak in 15 DEG C of smooth decorating liquids
500s, then takes out washing and dries, obtaining heterojunction solar battery silicon chip B1.
Performance test:
Silicon chip A1 and silicon chip B1 is done SEM scanning, obtains scanning figure, see Fig. 1 and Fig. 2 respectively.
From the contrast of Fig. 1 and Fig. 2 it can be seen that its corner angle of pyramid structure Fig. 1 are clearly demarcated, pinnacle of a pagoda
Relatively sharp-pointed, the pyramid structure in Fig. 2, its corner angle are mellow and full smooth, and pinnacle of a pagoda cannot not become sharply.This
The smooth decorating liquid of the present invention and smooth method of modifying are described, can effectively make the sharp-pointed of pyramid matte
Become mellow and full at the bottom of pinnacle of a pagoda and tower, make the surface roughness of pyramid matte reduce simultaneously, thus after being conducive to
Continuous intrinsic silicon thin film deposition is more uniform.
Each technical characteristic of above-described embodiment can combine arbitrarily, for making description succinct, not to above-mentioned
The all possible combination of each technical characteristic in embodiment is all described, but, as long as these technology are special
There is not contradiction in the combination levied, is all considered to be the scope that this specification is recorded.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes more concrete and detailed,
But can not therefore be construed as limiting the scope of the patent.It should be pointed out that, for this area
For those of ordinary skill, without departing from the inventive concept of the premise, it is also possible to make some deformation and change
Entering, these broadly fall into protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be with appended power
Profit requires to be as the criterion.
Claims (10)
1. being used for a smooth decorating liquid for the pyramid matte of heterojunction solar battery silicon chip, its feature exists
In, including ozone, fluohydric acid gas and water；The concentration of described ozone is 10～30mg/L.
Smoothing of pyramid matte for heterojunction solar battery silicon chip the most according to claim 1
Decorating liquid, it is characterised in that the concentration of described ozone is 15～20mg/L.
Smoothing of pyramid matte for heterojunction solar battery silicon chip the most according to claim 1
Decorating liquid, it is characterised in that the concentration of described fluohydric acid gas is 0.4～1wt%.
Smoothing of pyramid matte for heterojunction solar battery silicon chip the most according to claim 1
Decorating liquid, it is characterised in that described water is deionized water.
Smoothing of pyramid matte for heterojunction solar battery silicon chip the most according to claim 1
Decorating liquid, it is characterised in that described smooth decorating liquid by Ozone Water and Fluohydric acid. according to volume ratio 50～100:1
Configuration forms.
6. the smooth method of modifying of the pyramid matte of a heterojunction solar battery silicon chip, it is characterised in that
Comprise the steps:
Be placed in by the heterojunction solar battery silicon chip with pyramid matte described in claim 1 smooth repaiies
Decorations liquid soaks.
The smooth modification of the pyramid matte of heterojunction solar battery silicon chip the most according to claim 6
Method, it is characterised in that the temperature of described immersion is 15～25 DEG C.
The smooth modification of the pyramid matte of heterojunction solar battery silicon chip the most according to claim 6
Method, it is characterised in that the time of described immersion is 300～600s.
9. a heterojunction solar battery silicon chip, it is characterised in that described heterojunction solar battery silicon chip
Obtained by the smooth method of modifying described in claim 6.
10. a heterojunction solar battery, it is characterised in that include the hetero-junctions described in claim 9
Silicon chip of solar cell.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106571411A (en) * | 2016-10-19 | 2017-04-19 | 苏州阿特斯阳光电力科技有限公司 | Crystal silicon wafer etching method |
| CN106997915A (en) * | 2017-04-01 | 2017-08-01 | 江苏辉伦太阳能科技有限公司 | A kind of monocrystalline silicon surface honey comb structure and preparation method thereof |
| CN107393832A (en) * | 2017-08-11 | 2017-11-24 | 武汉华星光电半导体显示技术有限公司 | A kind of method for improving polysilicon surface flatness |
| CN109524487A (en) * | 2018-11-26 | 2019-03-26 | 西安交通大学 | Textured cell silicon with microcosmic round and smooth corner angle itself and preparation method |
| CN110993724A (en) * | 2019-10-17 | 2020-04-10 | 晋能清洁能源科技股份公司 | Texturing and cleaning method for heterojunction solar cell |
| CN111430479A (en) * | 2020-05-28 | 2020-07-17 | 熵熠(上海)能源科技有限公司 | Smoothing modification liquid for heterojunction solar cell silicon wafer, preparation method and smoothing modification method thereof |
| CN111455468A (en) * | 2020-05-25 | 2020-07-28 | 常州时创能源股份有限公司 | Additive for single crystal texturing and application thereof |
| US20200350445A1 (en) * | 2017-04-26 | 2020-11-05 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
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