CN110137079A - Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent and the Wool-making agent containing the adjusting control agent - Google Patents
Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent and the Wool-making agent containing the adjusting control agent Download PDFInfo
- Publication number
- CN110137079A CN110137079A CN201910431058.4A CN201910431058A CN110137079A CN 110137079 A CN110137079 A CN 110137079A CN 201910431058 A CN201910431058 A CN 201910431058A CN 110137079 A CN110137079 A CN 110137079A
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- Prior art keywords
- adjusting control
- wool
- control agent
- agent
- buddha
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- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 65
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 28
- 235000008216 herbs Nutrition 0.000 claims abstract description 19
- 210000002268 wool Anatomy 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000000080 wetting agent Substances 0.000 claims abstract description 5
- 230000002378 acidificating effect Effects 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims abstract description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- -1 alkyl glycosides Chemical class 0.000 claims description 7
- 239000005714 Chitosan hydrochloride Substances 0.000 claims description 6
- 229930182470 glycoside Natural products 0.000 claims description 6
- 150000004780 naphthols Chemical class 0.000 claims description 6
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 5
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 9
- 239000002994 raw material Substances 0.000 abstract description 7
- 238000002310 reflectometry Methods 0.000 abstract description 4
- 239000002253 acid Substances 0.000 abstract description 2
- 238000012876 topography Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001661 Chitosan Polymers 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Treatments For Attaching Organic Compounds To Fibrous Goods (AREA)
- Cosmetics (AREA)
Abstract
The invention discloses a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agents, including following components based on quality percentage: film forming agent 0.01%-1%, acidic materials 0.01%-1%, wetting agent 0.1%-1%, surplus are deionized water.The invention also discloses a kind of Wool-making agents comprising the making herbs into wool adjusting control agent.Adjusting control agent of the invention is applied in Wool-making agent, during Buddha's warrior attendant wire cutting polysilicon chip carries out making herbs into wool, acid therein can be adjusted to react with silicon, form silicon wafer microcellular structure, so that polysilicon chip not only has the microcellular structure being evenly distributed, but also micropore size is uniform, does not connect hole, deep hole, this structure formed can reduce the reflectivity to light, improve the absorptivity to light；And the preparing process of the adjusting control agent is simple, raw material is cheap and easy to get, is free of environmentally harmful substance, is a kind of green product.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, in particular to a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing tune
Control agent and the Wool-making agent containing the adjusting control agent.
Background technique
In the manufacturing process of solar battery sheet, need to make flannelette in silicon chip surface.Effective suede structure can be with
Extend light path, increases absorption of the silicon wafer to light, improve the efficiency of solar battery.
In addition, people use many experimental methods and technology, such as photoetching skill in order to reduce the reflection of surface of crystalline silicon
Art, reactive ion etching, electrochemical corrosion etc..These methods and techniques can change surface of crystalline silicon shape to a certain extent
Looks achieve the purpose that reduce silicon face reflection.In visible light wave segment limit, the reflectivity for reducing material can then increase light absorption
Rate, to improve the photoelectric conversion efficiency of device.
Thus, it is desirable to develop a kind of new function material with silicon face microcellular structure, this structure can be to close red
The light of wave section can absorb, and absorptivity is high.In order to obtain this silicon face microcellular structure, needing to develop one kind can be manufactured
The adjusting control agent of the silicon suede structure and the Wool-making agent for including the adjusting control agent.
Summary of the invention
In order to solve the above technical problems, the purpose of the present invention is to provide a kind of regulations of Buddha's warrior attendant wire cutting polycrystalline silicon texturing
Agent and Wool-making agent containing the adjusting control agent handle Buddha's warrior attendant wire cutting polysilicon chip using the Wool-making agent containing the making herbs into wool adjusting control agent, make
Treated that polysilicon chip not only has the microcellular structure being evenly distributed, but also microcellular structure size is uniform, does not connect hole, depth
Hole can reduce the reflectivity to light, and the preparing process of the adjusting control agent is simple, and raw material is cheap and easy to get, without to environment nocuousness
Substance, it is environmentally protective.
To realize above-mentioned technical purpose and the technique effect, the invention is realized by the following technical scheme: Yi Zhongjin
Rigid wire cutting polycrystalline silicon texturing adjusting control agent, including following components based on quality percentage: film forming agent 0.01%-1%, acidic materials
0.01%-1%, wetting agent 0.1%-1%, surplus are deionized water.
Preferably, the film forming agent is the mixture of chitosan hydrochloride, polyvinyl alcohol or both.
Preferably, the acidic materials are the mixture of citric acid, glycolic or both.
Preferably, the wetting agent is the mixture of alkyl glycosides, naphthols polyoxyethylene ether or both.
Preferably, Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent, including following components based on quality percentage: chitosan
Mixture 0.01%-0.06%, alkyl glycosides and the naphthols polyoxy second of hydrochloride 0.05%-0.25%, citric acid and glycolic
The mixture 0.2%-0.8% of alkene ether, surplus are deionized water.
The present invention also provides a kind of Wool-making agents containing above-mentioned making herbs into wool adjusting control agent, include with the following group by volume percentage
Point: hydrofluoric acid 8%-12%, hydrogen peroxide 25%-35%, making herbs into wool adjusting control agent 0.5%-1%, surplus is deionized water.
Preferably, the concentration of hydrofluoric acid therein is 49wt%.
The beneficial effects of the present invention are:
Adjusting control agent of the invention is applied in Wool-making agent, during Buddha's warrior attendant wire cutting polysilicon chip carries out making herbs into wool, energy
It enough adjusts acid therein to react with silicon, formation silicon wafer microcellular structure, so that polysilicon chip not only has the micropore being evenly distributed
Structure, and micropore size is uniform, does not connect hole, deep hole, and this structure of formation can reduce the reflectivity to light, raising pair
The absorptivity of light；And the preparing process of the adjusting control agent is simple, raw material is cheap and easy to get, is free of environmentally harmful substance, is a kind of
Green product.
Detailed description of the invention
Fig. 1 is the SEM schematic diagram of the polished polysilicon chip surface topography without making herbs into wool；
Fig. 2 is to carry out treated surface topography to polysilicon chip using Wool-making agent made of the embodiment of the present invention 1
SEM schematic diagram；
Fig. 3 is to carry out treated surface topography to polysilicon chip using Wool-making agent made of the embodiment of the present invention 2
SEM schematic diagram；
Fig. 4 is to carry out treated surface topography to polysilicon chip using Wool-making agent made of the embodiment of the present invention 3
SEM schematic diagram.
Specific embodiment
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing, so that advantages and features of the invention energy
It is easier to be readily appreciated by one skilled in the art, so as to make a clearer definition of the protection scope of the present invention.
Embodiment 1
The present invention provides a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent, by mass percentage includes with the following group
Point: the mixture 0.056% of chitosan hydrochloride 0.1%, citric acid and glycolic, alkyl glycosides 0.8%, surplus are deionization
Water.
Above-mentioned each raw material is accurately weighed according to mass percent, is put into reaction kettle, at room temperature, is stirred 1 hour
Afterwards, light yellow transparent liquid is made, making herbs into wool adjusting control agent as of the invention measures the pH value of the making herbs into wool adjusting control agent are as follows: 2.99.
Above-mentioned making herbs into wool adjusting control agent and hydrofluoric acid and hydrogen peroxide are configured to Wool-making agent according to the proportion: 371ml49wt%'s
The deionized water of hydrofluoric acid, 1222ml hydrogen peroxide, the above-mentioned making herbs into wool adjusting control agent of 34.7ml, 2324ml.Above-mentioned each raw material is put into
In slot, circulation is uniformly mixed and is warming up to 32 DEG C, carries out 200 to the polysilicon chip (surface topography is shown in Fig. 1) after polished
The processing of second, treated, and silicon chip surface is in microcellular structure (see Fig. 2).
Embodiment 2
The present invention provides a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent, by mass percentage includes with the following group
Point: the mixture 0.06% of chitosan hydrochloride 0.15%, citric acid and glycolic, naphthols polyoxyethylene ether 0.6%, surplus are
Deionized water.
Above-mentioned each raw material is accurately weighed according to mass percent, is put into reaction kettle, at room temperature, is stirred 1 hour
Afterwards, light yellow transparent liquid is made, making herbs into wool adjusting control agent as of the invention measures the pH value of the making herbs into wool adjusting control agent are as follows: 2.89.
Above-mentioned making herbs into wool adjusting control agent and hydrofluoric acid and hydrogen peroxide are configured to Wool-making agent by proportion same as Example 1, and
Polysilicon chip after polishing is handled using method same as Example 1, treated, and silicon chip surface is in microcellular structure
(see Fig. 3).
Embodiment 3
The present invention provides a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent, by mass percentage includes with the following group
Point: mixture 0.056%, alkyl glycosides and the naphthols polyoxyethylene ether of chitosan hydrochloride 0.25%, citric acid and glycolic
Mixture 0.6%, surplus be deionized water.
Above-mentioned each raw material is accurately weighed according to mass percent, is put into reaction kettle, at room temperature, is stirred 1 hour
Afterwards, light yellow transparent liquid is made, making herbs into wool adjusting control agent as of the invention measures the pH value of the making herbs into wool adjusting control agent are as follows: 2..82.
Above-mentioned making herbs into wool adjusting control agent and hydrofluoric acid and hydrogen peroxide are configured to Wool-making agent by proportion same as Example 1,
And polysilicon chip after polishing is handled using method same as Example 1, treated, and silicon chip surface is in micropore knot
Structure (see Fig. 4).
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (7)
1. a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent, which is characterized in that including following components based on quality percentage: at
Film 0.01%-1%, acidic materials 0.01%-1%, wetting agent 0.1%-1%, surplus are deionized water.
2. a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent according to claim 1, it is characterised in that: the film forming
Agent is the mixture of chitosan hydrochloride, polyvinyl alcohol or both.
3. a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent according to claim 1, it is characterised in that: the acidity
Substance is the mixture of citric acid, glycolic or both.
4. a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent according to claim 1, it is characterised in that: the wetting
Agent is the mixture of alkyl glycosides, naphthols polyoxyethylene ether or both.
5. a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing adjusting control agent according to claim 1, it is characterised in that: press quality hundred
Dividing meter includes following components: the mixture 0.01%- of chitosan hydrochloride 0.05%-0.25%, citric acid and glycolic
0.06%, the mixture 0.2%-0.8% of alkyl glycosides and naphthols polyoxyethylene ether, surplus are deionized water.
6. a kind of Wool-making agent of the described in any item making herbs into wool adjusting control agents of 1-5 containing claim, which is characterized in that the Wool-making agent presses matter
Measuring percentage meter includes following components: hydrofluoric acid 8%-12%, hydrogen peroxide 25%-35%, making herbs into wool adjusting control agent 0.5%-1%, surplus
For deionized water.
7. Wool-making agent according to claim 6, it is characterised in that: the concentration of hydrofluoric acid is 49wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910431058.4A CN110137079B (en) | 2019-05-22 | 2019-05-22 | Diamond wire cutting polycrystalline silicon wafer texturing regulating agent and texturing agent containing regulating agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910431058.4A CN110137079B (en) | 2019-05-22 | 2019-05-22 | Diamond wire cutting polycrystalline silicon wafer texturing regulating agent and texturing agent containing regulating agent |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110137079A true CN110137079A (en) | 2019-08-16 |
| CN110137079B CN110137079B (en) | 2021-08-13 |
Family
ID=67572421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910431058.4A Active CN110137079B (en) | 2019-05-22 | 2019-05-22 | Diamond wire cutting polycrystalline silicon wafer texturing regulating agent and texturing agent containing regulating agent |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110137079B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102978710A (en) * | 2012-08-13 | 2013-03-20 | 杭州道乐太阳能技术有限公司 | Silicon solar cell surface light trapping structure and preparation method thereof |
| CN103409808A (en) * | 2013-09-04 | 2013-11-27 | 常州时创能源科技有限公司 | Texturization additive for polycrystalline silicon slices and use method of texturization additive |
| CN104294369A (en) * | 2014-11-13 | 2015-01-21 | 苏州润阳光伏科技有限公司 | Acid texturing additive for polysilicon film and use method thereof |
| WO2017185592A1 (en) * | 2016-04-29 | 2017-11-02 | 南京工业大学 | Texturing method of polycrystalline silicon wafer cut by diamond wire |
| CN108130598A (en) * | 2017-12-03 | 2018-06-08 | 宁波道乐新材料科技有限公司 | The special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece and its application method |
-
2019
- 2019-05-22 CN CN201910431058.4A patent/CN110137079B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102978710A (en) * | 2012-08-13 | 2013-03-20 | 杭州道乐太阳能技术有限公司 | Silicon solar cell surface light trapping structure and preparation method thereof |
| CN103409808A (en) * | 2013-09-04 | 2013-11-27 | 常州时创能源科技有限公司 | Texturization additive for polycrystalline silicon slices and use method of texturization additive |
| CN104294369A (en) * | 2014-11-13 | 2015-01-21 | 苏州润阳光伏科技有限公司 | Acid texturing additive for polysilicon film and use method thereof |
| WO2017185592A1 (en) * | 2016-04-29 | 2017-11-02 | 南京工业大学 | Texturing method of polycrystalline silicon wafer cut by diamond wire |
| CN108130598A (en) * | 2017-12-03 | 2018-06-08 | 宁波道乐新材料科技有限公司 | The special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece and its application method |
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| Publication number | Publication date |
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| CN110137079B (en) | 2021-08-13 |
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Address after: 215000 No. 168, Shanfeng Road, Wuzhong Development Zone, Suzhou, Jiangsu Patentee after: Jingrui Electronic Materials Co.,Ltd. Address before: 215000 No. 168, Shanfeng Road, Wuzhong Development Zone, Suzhou, Jiangsu Patentee before: SUZHOU CRYSTAL CLEAR CHEMICAL Co.,Ltd. |