CN110137079B - Diamond wire cutting polycrystalline silicon wafer texturing regulating agent and texturing agent containing regulating agent - Google Patents
Diamond wire cutting polycrystalline silicon wafer texturing regulating agent and texturing agent containing regulating agent Download PDFInfo
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- CN110137079B CN110137079B CN201910431058.4A CN201910431058A CN110137079B CN 110137079 B CN110137079 B CN 110137079B CN 201910431058 A CN201910431058 A CN 201910431058A CN 110137079 B CN110137079 B CN 110137079B
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- texturing
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- regulating agent
- silicon wafer
- polycrystalline silicon
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- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 58
- 230000001105 regulatory effect Effects 0.000 title claims abstract description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 23
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 14
- 239000010432 diamond Substances 0.000 title claims abstract description 14
- 238000005520 cutting process Methods 0.000 title claims abstract description 11
- 239000008367 deionised water Substances 0.000 claims abstract description 11
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 7
- 230000002378 acidificating effect Effects 0.000 claims abstract description 5
- 239000000080 wetting agent Substances 0.000 claims abstract description 5
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid group Chemical group C(CC(O)(C(=O)O)CC(=O)O)(=O)O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 14
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 claims description 8
- 239000005714 Chitosan hydrochloride Substances 0.000 claims description 8
- -1 alkyl glycoside Chemical class 0.000 claims description 8
- 229930182470 glycoside Natural products 0.000 claims description 8
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 8
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 239000002994 raw material Substances 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 239000002253 acid Substances 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000012876 topography Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000005303 weighing Methods 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a diamond wire cutting polycrystalline silicon wafer texturing regulating agent which comprises the following components in percentage by mass: 0.01-1% of film forming agent, 0.01-1% of acidic substance, 0.1-1% of wetting agent and the balance of deionized water. The invention also discloses a texturing agent containing the texturing regulating agent. The regulating agent is applied to the texturing agent, and can regulate the reaction of acid and silicon in the diamond wire-cut polycrystalline silicon wafer to form a silicon wafer micropore structure in the texturing process, so that the polycrystalline silicon wafer not only has a uniformly distributed micropore structure, but also has uniform micropores without connecting holes and deep holes, and the formed structure can reduce the reflectivity to light and improve the absorptivity to light; the preparation process of the regulating agent is simple, the raw materials are cheap and easy to obtain, and the regulating agent does not contain substances harmful to the environment, and is a green and environment-friendly product.
Description
Technical Field
The invention relates to the technical field of solar cell manufacturing, in particular to a diamond wire cutting polycrystalline silicon wafer texturing regulating agent and a texturing agent containing the same.
Background
In the manufacturing process of the solar cell, a textured surface needs to be manufactured on the surface of a silicon wafer. The effective suede structure can prolong the optical path, increase the light absorption of the silicon chip and improve the efficiency of the solar cell.
In addition, many experimental methods and techniques such as photolithography, reactive ion etching, electrochemical etching, etc. have been used to reduce the reflection from the surface of crystalline silicon. The method and the technology can change the surface appearance of the crystalline silicon to a certain extent, and achieve the purpose of reducing the reflection of the silicon surface. In the visible light wave band range, the light absorptivity can be increased by reducing the reflectivity of the material, so that the photoelectric conversion efficiency of the device is improved.
Therefore, it is necessary to develop a novel functional material having a silicon surface microporous structure, which can absorb light in the near infrared band and has a high absorption rate. In order to obtain such a microporous structure on the silicon surface, it is necessary to develop a conditioning agent that can produce the silicon texture structure and a texturing agent containing the conditioning agent.
Disclosure of Invention
In order to solve the technical problems, the invention aims to provide a diamond wire-cutting polycrystalline silicon wafer texturing regulating agent and a texturing agent containing the same.
In order to achieve the technical purpose and achieve the technical effect, the invention is realized by the following technical scheme: the diamond wire cutting polycrystalline silicon wafer texturing regulating agent comprises the following components in percentage by mass: 0.01-1% of film forming agent, 0.01-1% of acidic substance, 0.1-1% of wetting agent and the balance of deionized water.
Preferably, the film forming agent is chitosan hydrochloride, polyvinyl alcohol or a mixture of the chitosan hydrochloride and the polyvinyl alcohol.
Preferably, the acidic substance is citric acid, glycolic acid or a mixture of both.
Preferably, the wetting agent is alkyl glycoside, naphthol polyoxyethylene ether or a mixture of the alkyl glycoside and the naphthol polyoxyethylene ether.
Preferably, the diamond wire cutting polycrystalline silicon wafer texturing regulating agent comprises the following components in percentage by mass: 0.05 to 0.25 percent of chitosan hydrochloride, 0.01 to 0.06 percent of mixture of citric acid and glycollic acid, 0.2 to 0.8 percent of mixture of alkyl glycoside and naphthol polyoxyethylene ether, and the balance of deionized water.
The invention also provides a texturing agent containing the texturing regulating agent, which comprises the following components in percentage by volume: 8 to 12 percent of hydrofluoric acid, 25 to 35 percent of hydrogen peroxide, 0.5 to 1 percent of texturing regulating agent and the balance of deionized water.
Preferably, the concentration of hydrofluoric acid therein is 49 wt%.
The invention has the beneficial effects that:
the regulating agent is applied to the texturing agent, and can regulate the reaction of acid and silicon in the diamond wire-cut polycrystalline silicon wafer to form a silicon wafer micropore structure in the texturing process, so that the polycrystalline silicon wafer not only has a uniformly distributed micropore structure, but also has uniform micropores without connecting holes and deep holes, and the formed structure can reduce the reflectivity to light and improve the absorptivity to light; the preparation process of the regulating agent is simple, the raw materials are cheap and easy to obtain, and the regulating agent does not contain substances harmful to the environment, and is a green and environment-friendly product.
Drawings
FIG. 1 is a SEM illustration of a polished, untextured, polycrystalline silicon wafer surface topography;
FIG. 2 is a SEM diagram of the surface topography of a polycrystalline silicon wafer treated with a texturing agent prepared in example 1 of the present invention;
FIG. 3 is a SEM (scanning Electron microscope) schematic diagram of the surface topography of a polycrystalline silicon wafer treated by using the texturing agent prepared in example 2 of the invention;
FIG. 4 is a SEM diagram of the surface topography of a polysilicon wafer after being processed by using the texturing agent prepared in example 3 of the present invention.
Detailed Description
The following detailed description of the preferred embodiments of the present invention, taken in conjunction with the accompanying drawings, will make the advantages and features of the invention easier to understand by those skilled in the art, and thus will clearly and clearly define the scope of the invention.
Example 1
The invention provides a diamond wire cutting polycrystalline silicon slice texturing regulating agent which comprises the following components in percentage by mass: chitosan hydrochloride 0.1%, mixture of citric acid and glycolic acid 0.056%, alkyl glycoside 0.8%, the balance is deionized water.
Accurately weighing the raw materials according to the mass percentage, putting the raw materials into a reaction kettle, stirring and mixing the raw materials for 1 hour at room temperature to prepare light yellow transparent liquid, namely the texture-making regulating agent, and determining the pH value of the texture-making regulating agent as follows: 2.99.
preparing the texturing regulating agent, hydrofluoric acid and hydrogen peroxide into the texturing agent according to the mixture ratio: 371ml49 wt% hydrofluoric acid, 1222ml hydrogen peroxide, 34.7ml the above-mentioned wool making regulator, 2324ml deionized water. The raw materials are put into a tank, are mixed uniformly in a circulating way, are heated to 32 ℃, and are processed for 200 seconds on a polished polycrystalline silicon wafer (the surface appearance structure is shown in figure 1), and the surface of the processed silicon wafer is in a micropore structure (shown in figure 2).
Example 2
The invention provides a diamond wire cutting polycrystalline silicon slice texturing regulating agent which comprises the following components in percentage by mass: 0.15% of chitosan hydrochloride, 0.06% of mixture of citric acid and glycollic acid, 0.6% of naphthol polyoxyethylene ether and the balance of deionized water.
Accurately weighing the raw materials according to the mass percentage, putting the raw materials into a reaction kettle, stirring and mixing the raw materials for 1 hour at room temperature to prepare light yellow transparent liquid, namely the texture-making regulating agent, and determining the pH value of the texture-making regulating agent as follows: 2.89.
the texturing regulating agent, hydrofluoric acid and hydrogen peroxide are prepared into the texturing agent according to the same proportion as that in the embodiment 1, the polished polycrystalline silicon wafer is processed by the same method as that in the embodiment 1, and the surface of the processed silicon wafer is of a microporous structure (see figure 3).
Example 3
The invention provides a diamond wire cutting polycrystalline silicon slice texturing regulating agent which comprises the following components in percentage by mass: 0.25% of chitosan hydrochloride, 0.056% of mixture of citric acid and glycollic acid, 0.6% of mixture of alkyl glycoside and naphthol polyoxyethylene ether, and the balance of deionized water.
Accurately weighing the raw materials according to the mass percentage, putting the raw materials into a reaction kettle, stirring and mixing the raw materials for 1 hour at room temperature to prepare light yellow transparent liquid, namely the texture-making regulating agent, and determining the pH value of the texture-making regulating agent as follows: 2..82.
The texturing regulating agent, hydrofluoric acid and hydrogen peroxide are prepared into the texturing agent according to the same proportion as that in the embodiment 1, the polished polycrystalline silicon wafer is processed by the same method as that in the embodiment 1, and the surface of the processed silicon wafer is of a microporous structure (see figure 4).
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes performed by the present specification and drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (4)
1. The diamond wire cutting polycrystalline silicon wafer texturing regulating agent is characterized by comprising the following components in percentage by mass: 0.01-1% of film forming agent, 0.01-1% of acidic substance, 0.1-1% of wetting agent and the balance of deionized water; the film forming agent is chitosan hydrochloride; the acidic substance is citric acid, glycolic acid or a mixture of the citric acid and the glycolic acid; the wetting agent is alkyl glycoside, naphthol polyoxyethylene ether or a mixture of the alkyl glycoside and the naphthol polyoxyethylene ether.
2. The diamond wire-cut polycrystalline silicon wafer texturing regulating agent as claimed in claim 1, wherein: the composite material comprises the following components in percentage by mass: 0.05 to 0.25 percent of chitosan hydrochloride, 0.01 to 0.06 percent of mixture of citric acid and glycollic acid, 0.2 to 0.8 percent of mixture of alkyl glycoside and naphthol polyoxyethylene ether, and the balance of deionized water.
3. A texturing agent containing the texturing regulating agent of claim 1 or 2, which is characterized by comprising the following components in percentage by mass: 8 to 12 percent of hydrofluoric acid, 25 to 35 percent of hydrogen peroxide, 0.5 to 1 percent of texturing regulating agent and the balance of deionized water.
4. The texturing agent of claim 3, wherein: the concentration of hydrofluoric acid was 49 wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910431058.4A CN110137079B (en) | 2019-05-22 | 2019-05-22 | Diamond wire cutting polycrystalline silicon wafer texturing regulating agent and texturing agent containing regulating agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910431058.4A CN110137079B (en) | 2019-05-22 | 2019-05-22 | Diamond wire cutting polycrystalline silicon wafer texturing regulating agent and texturing agent containing regulating agent |
Publications (2)
| Publication Number | Publication Date |
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| CN110137079A CN110137079A (en) | 2019-08-16 |
| CN110137079B true CN110137079B (en) | 2021-08-13 |
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| CN201910431058.4A Active CN110137079B (en) | 2019-05-22 | 2019-05-22 | Diamond wire cutting polycrystalline silicon wafer texturing regulating agent and texturing agent containing regulating agent |
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Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102978710A (en) * | 2012-08-13 | 2013-03-20 | 杭州道乐太阳能技术有限公司 | Silicon solar cell surface light trapping structure and preparation method thereof |
| CN103409808B (en) * | 2013-09-04 | 2015-10-21 | 常州时创能源科技有限公司 | Polycrystalline silicon texturing additive and using method thereof |
| CN104294369A (en) * | 2014-11-13 | 2015-01-21 | 苏州润阳光伏科技有限公司 | Acid texturing additive for polysilicon film and use method thereof |
| CN105810761B (en) * | 2016-04-29 | 2018-07-27 | 南京工业大学 | A kind of etching method of Buddha's warrior attendant wire cutting polysilicon chip |
| CN108130598A (en) * | 2017-12-03 | 2018-06-08 | 宁波道乐新材料科技有限公司 | The special alkali flocking additive of Buddha's warrior attendant wire cutting monocrystalline silicon piece and its application method |
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Address after: 215000 No. 168, Shanfeng Road, Wuzhong Development Zone, Suzhou, Jiangsu Patentee after: Jingrui Electronic Materials Co.,Ltd. Address before: 215000 No. 168, Shanfeng Road, Wuzhong Development Zone, Suzhou, Jiangsu Patentee before: SUZHOU CRYSTAL CLEAR CHEMICAL Co.,Ltd. |
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