CN108130597A - 多晶硅片的处理方法 - Google Patents
多晶硅片的处理方法 Download PDFInfo
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 58
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 56
- 238000003672 processing method Methods 0.000 title claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000004411 aluminium Substances 0.000 claims abstract description 31
- 238000005520 cutting process Methods 0.000 claims abstract description 21
- 210000002268 wool Anatomy 0.000 claims abstract description 18
- 235000008216 herbs Nutrition 0.000 claims abstract description 16
- 229910000632 Alusil Inorganic materials 0.000 claims abstract description 15
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 15
- 239000000956 alloy Substances 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 239000002253 acid Substances 0.000 claims abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002000 scavenging effect Effects 0.000 description 2
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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Abstract
本发明公开了一种多晶硅片的处理方法,包括以下步骤:S1:在金刚线切割的多晶硅片的正面形成铝浆;S2:对步骤S1所得的多晶硅片进行加热处理,铝浆在加热处理过程中转变为形成于该多晶硅片的正面的铝硅合金层和位于该铝硅合金层上的铝层,并且铝元素扩散至多晶硅片的正面中形成扩散层;S3:清洗加热处理后的多晶硅片,去除铝层和铝硅合金层;S4:采用酸性制绒试剂对步骤S3得到的结构进行正面制绒以在多晶硅片的正面形成绒面。通过本发明的处理方法,使得金刚线切割所得的多晶硅片的表面能形成大小深度不一的凹坑,有利于后续的制绒。
Description
技术领域
本发明涉及一种多晶硅片的处理方法,特别是涉及一种金刚线切割所得的多晶硅片的处理方法。
背景技术
对于单晶硅而言,金刚线切割有着比较大的优势,其切割损失少,硅锭的利用率得到提高,同样大小的硅锭采用金刚线切割能够得到更多数量的硅片。
但是在将金刚线切割应用到多晶硅的切割上就出现了问题,由于金刚线切割的多晶硅片表面的损伤层厚度较薄,缺陷较少,并且在金刚线切割过程中多晶硅片表面形成一非晶硅层,该非晶硅层阻挡了传统制绒药液和硅片的反应。因此常规的硝酸/氢氟酸制绒体系难以在金刚线切割的多晶硅片的表面制绒以得到理想的陷光结构。由此,希望找到一种针对金刚线切割的多晶硅片的制绒方法。
发明内容
本发明要解决的技术问题是为了克服现有技术中金刚线切割的多晶硅片难以制绒的缺陷,提供一种多晶硅片的处理方法,通过处理的多晶硅片制绒效果较好,由此使得金刚线切割得以被应用于多晶硅切割中。
本发明是通过下述技术方案来解决上述技术问题的:
一种多晶硅片的处理方法,其特点在于,包括以下步骤:
S1:在金刚线切割的多晶硅片的正面形成铝浆;
S2:对步骤S1所得的多晶硅片进行加热处理,铝浆在加热处理过程中转变为形成于该多晶硅片的正面的铝硅合金层和位于该铝硅合金层上的铝层,并且铝元素扩散至多晶硅片的正面中形成扩散层;
S3:清洗加热处理后的多晶硅片,去除铝层和铝硅合金层;
S4:采用酸性制绒试剂对步骤S3得到的结构进行正面制绒以在多晶硅片的正面形成绒面。
在多晶硅片表明形成铝浆,铝浆在热处理过程中和硅片表面的非晶硅层和非晶硅层下面的多晶硅片反应形成铝硅合金。在随后的清洗步骤中,硅片上的铝层和铝硅合金层被去除,暴露出多晶硅表面。因为铝和硅的反应是不均匀的,在多晶硅片表面形成的铝硅合金深度和大小也是不均匀的。因此在去除铝硅合金后,硅片表面会形成大小深度不一的凹坑,在接下来的酸制绒步骤中有利于形成反射率更低的绒面。
优选地,铝浆的形成方式选自:丝网印刷、旋涂和喷涂。
优选地,铝浆的厚度为50nm-500um。
优选地,加热的峰值温度700-900℃,热处理时间1-30分钟。
优选地,步骤S3中采用酸性清洗试剂清洗多晶硅片,该酸性清洗试剂为磷酸、盐酸或磷酸和盐酸的混合物。
优选地,步骤S3中清洗时间为1-60分钟,温度为室温至80℃。
优选地,该酸性制绒试剂为氢氟酸和硝酸的混合物,其中氢氟酸和硝酸的体积比为1:1-1:10。
优选地,步骤S3的清洗过程中去除该扩散层。
在符合本领域常识的基础上,上述各优选条件,可任意组合,即得本发明各较佳实例。
本发明所用试剂和原料均市售可得。
本发明的积极进步效果在于:通过本发明的处理方法,使得金刚线切割所得的多晶硅片的表面能形成大小深度不一的凹坑,有利于后续的制绒。由此,金刚线切割可被应用于多晶硅片的切割,从而降低了多晶片的成本。
附图说明
图1为本发明一实施例的在多晶硅片上形成铝浆的示意图。
图2为本发明一实施例的热处理带有铝浆的多晶硅片的示意图。
图3为本发明一实施例的在多晶硅片正面形成绒面的示意图。
具体实施方式
下面通过实施例的方式进一步说明本发明,但并不因此将本发明限制在所述的实施例范围之中。下列实施例中未注明具体条件的实验方法,按照常规方法和条件,或按照商品说明书选择。
实施例1
参考图1,在金刚线切割的多晶硅片100的正面丝网印刷铝浆200,铝浆的厚度为50um。
参考图2,对图1所示的多晶硅片进行加热处理,加热的峰值温度700-900℃,热处理时间1-30分钟,铝浆在加热处理过程中转变为形成于该多晶硅片的正面的铝硅合金层202和位于该铝硅合金层上的铝层203,并且铝元素扩散至多晶硅片的正面中形成扩散层201。
参考图3,采用磷酸和盐酸的混合物在室温下清洗加热处理后的多晶硅片,去除铝层和铝硅合金层,清洗时间为30分钟,之后采用酸性制绒试剂对多晶硅片进行正面制绒以在多晶硅片的正面形成绒面,这里采用体积比为1:4的氢氟酸/硝酸对正面制绒。在制绒过程中,扩散层201也被腐蚀掉,之后得到正面的多晶硅绒面,以标记300表示。
虽然以上描述了本发明的具体实施方式,但是本领域的技术人员应当理解,这些仅是举例说明,本发明的保护范围是由所附权利要求书限定的。本领域的技术人员在不背离本发明的原理和实质的前提下,可以对这些实施方式做出多种变更或修改,但这些变更和修改均落入本发明的保护范围。
Claims (8)
1.一种多晶硅片的处理方法,其特征在于,包括以下步骤:
S1:在金刚线切割的多晶硅片的正面形成铝浆;
S2:对步骤S1所得的多晶硅片进行加热处理,铝浆在加热处理过程中转变为形成于该多晶硅片的正面的铝硅合金层和位于该铝硅合金层上的铝层,并且铝元素扩散至多晶硅片的正面中形成扩散层;
S3:清洗加热处理后的多晶硅片,去除铝层和铝硅合金层;
S4:采用酸性制绒试剂对步骤S3得到的结构进行正面制绒以在多晶硅片的正面形成绒面。
2.如权利要求1所述的多晶硅片的处理方法,其特征在于,铝浆的形成方式选自:丝网印刷、旋涂和喷涂。
3.如权利要求1所述的多晶硅片的处理方法,其特征在于,铝浆的厚度为50nm-500um。
4.如权利要求1-3中任意一项所述的多晶硅片的处理方法,其特征在于,加热的峰值温度700-900℃,热处理时间1-30分钟。
5.如权利要求1-3中任意一项所述的多晶硅片的处理方法,其特征在于,步骤S3中采用酸性清洗试剂清洗多晶硅片,该酸性清洗试剂为磷酸、盐酸或磷酸和盐酸的混合物。
6.如权利要求1-3中任意一项所述的多晶硅片的处理方法,其特征在于,步骤S3中清洗时间为1-60分钟,温度为室温至80℃。
7.如权利要求1-3中任意一项所述的多晶硅片的处理方法,其特征在于,该酸性制绒试剂为氢氟酸和硝酸的混合物,其中氢氟酸和硝酸的体积比为1:1-1:10。
8.如权利要求1-3中任意一项所述的多晶硅片的处理方法,其特征在于,步骤S3的清洗过程中去除该扩散层。
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US4154632A (en) * | 1977-08-12 | 1979-05-15 | Hitachi, Ltd. | Method of diffusing aluminum into silicon substrate for manufacturing semiconductor device |
CN103668466A (zh) * | 2012-09-17 | 2014-03-26 | 无锡尚德太阳能电力有限公司 | 一种多晶硅片制绒液及制绒方法 |
CN105932078A (zh) * | 2016-01-15 | 2016-09-07 | 北京创世捷能机器人有限公司 | 一种金刚线切割的多晶硅片的制绒方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4154632A (en) * | 1977-08-12 | 1979-05-15 | Hitachi, Ltd. | Method of diffusing aluminum into silicon substrate for manufacturing semiconductor device |
CN103668466A (zh) * | 2012-09-17 | 2014-03-26 | 无锡尚德太阳能电力有限公司 | 一种多晶硅片制绒液及制绒方法 |
CN105932078A (zh) * | 2016-01-15 | 2016-09-07 | 北京创世捷能机器人有限公司 | 一种金刚线切割的多晶硅片的制绒方法 |
Non-Patent Citations (1)
Title |
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