CN108129020B - 一种玻璃用组合物、铝硅酸盐玻璃及其制备方法和应用 - Google Patents
一种玻璃用组合物、铝硅酸盐玻璃及其制备方法和应用 Download PDFInfo
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- CN108129020B CN108129020B CN201711330222.XA CN201711330222A CN108129020B CN 108129020 B CN108129020 B CN 108129020B CN 201711330222 A CN201711330222 A CN 201711330222A CN 108129020 B CN108129020 B CN 108129020B
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- glass
- alumina silicate
- molar percent
- silicate glass
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- 239000011521 glass Substances 0.000 title claims abstract description 142
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 239000000203 mixture Substances 0.000 title claims abstract description 45
- 239000005368 silicate glass Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 30
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 30
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 21
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 21
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 21
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 21
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 21
- 229910003069 TeO2 Inorganic materials 0.000 claims abstract description 20
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims abstract description 9
- 230000004927 fusion Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 35
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 20
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 18
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 18
- 238000002844 melting Methods 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 15
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 10
- 238000003754 machining Methods 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 5
- 238000009776 industrial production Methods 0.000 abstract description 2
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 239000005357 flat glass Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 6
- 239000008395 clarifying agent Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000006124 Pilkington process Methods 0.000 description 4
- 238000004031 devitrification Methods 0.000 description 4
- 238000003280 down draw process Methods 0.000 description 4
- 238000005816 glass manufacturing process Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Chemical compound [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000000338 in vitro Methods 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 2
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical compound [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 2
- 238000004017 vitrification Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- XUBKPYAWPSXPDZ-UHFFFAOYSA-N [Ba].OS(O)(=O)=O Chemical compound [Ba].OS(O)(=O)=O XUBKPYAWPSXPDZ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002419 bulk glass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003426 chemical strengthening reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000004293 potassium hydrogen sulphite Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- -1 with molar percent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Glass Compositions (AREA)
- Liquid Crystal (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
Description
Claims (13)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711330222.XA CN108129020B (zh) | 2017-12-13 | 2017-12-13 | 一种玻璃用组合物、铝硅酸盐玻璃及其制备方法和应用 |
US16/772,671 US11795100B2 (en) | 2017-12-13 | 2018-11-14 | Composition for glass, and aluminosilicate glass, preparation method therefor, and use thereof |
PCT/CN2018/115460 WO2019114486A1 (zh) | 2017-12-13 | 2018-11-14 | 一种玻璃用组合物、铝硅酸盐玻璃及其制备方法和应用 |
KR1020207019357A KR102578590B1 (ko) | 2017-12-13 | 2018-11-14 | 유리 조성물, 알루미노실리케이트 유리 및 그 제조 방법, 적용 |
JP2020552082A JP7087102B2 (ja) | 2017-12-13 | 2018-11-14 | アルミノ珪酸塩ガラス及びその調製方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201711330222.XA CN108129020B (zh) | 2017-12-13 | 2017-12-13 | 一种玻璃用组合物、铝硅酸盐玻璃及其制备方法和应用 |
Publications (2)
Publication Number | Publication Date |
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CN108129020A CN108129020A (zh) | 2018-06-08 |
CN108129020B true CN108129020B (zh) | 2019-06-07 |
Family
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Country Status (5)
Country | Link |
---|---|
US (1) | US11795100B2 (zh) |
JP (1) | JP7087102B2 (zh) |
KR (1) | KR102578590B1 (zh) |
CN (1) | CN108129020B (zh) |
WO (1) | WO2019114486A1 (zh) |
Families Citing this family (3)
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CN108129020B (zh) | 2017-12-13 | 2019-06-07 | 东旭科技集团有限公司 | 一种玻璃用组合物、铝硅酸盐玻璃及其制备方法和应用 |
CN109399922B (zh) * | 2018-10-16 | 2022-03-04 | 东旭光电科技股份有限公司 | 玻璃用组合物、铝硅酸盐玻璃及其制备方法和应用 |
WO2022026348A1 (en) * | 2020-07-30 | 2022-02-03 | Corning Incorporated | High boron oxide low alumina and alkali-free glasses for through glass via applications |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006036626A (ja) * | 2004-06-23 | 2006-02-09 | Nippon Electric Glass Co Ltd | 無アルカリガラス基板 |
CN101066836A (zh) * | 2007-06-11 | 2007-11-07 | 中国洛阳浮法玻璃集团有限责任公司 | Tft基板玻璃 |
CN101092280A (zh) * | 2007-06-07 | 2007-12-26 | 河南安彩高科股份有限公司 | 铝硼硅酸盐玻璃组合物及其应用 |
CN105859128A (zh) * | 2016-04-06 | 2016-08-17 | 芜湖东旭光电装备技术有限公司 | 一种玻璃用组合物、低表面张力无碱玻璃及其制备方法和应用 |
Family Cites Families (8)
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JP3150992B2 (ja) | 1991-03-20 | 2001-03-26 | キヤノン株式会社 | レンズの製造方法 |
KR20140015314A (ko) * | 2011-01-28 | 2014-02-06 | 아사히 가라스 가부시키가이샤 | Cu-In-Ga-Se 태양 전지용 유리 기판 및 그것을 사용한 태양 전지 |
DE102012100233B4 (de) * | 2012-01-12 | 2014-05-15 | Schott Ag | Hochtransmittive Gläser mit hoher Solarisationsbeständigkeit, ihre Verwendung und Verfahren zu ihrer Herstellung |
DE102013208838B4 (de) * | 2013-05-14 | 2015-03-05 | Schott Ag | Beleuchtungseinrichtung mit erweitertem Nutzspektrum und deren Verwendung |
EP3142977B1 (en) | 2014-05-15 | 2021-10-06 | Corning Incorporated | Aluminosilicate glasses |
CN114349368B (zh) * | 2016-01-21 | 2022-11-25 | Agc株式会社 | 化学强化玻璃以及化学强化用玻璃 |
CN108129020B (zh) | 2017-12-13 | 2019-06-07 | 东旭科技集团有限公司 | 一种玻璃用组合物、铝硅酸盐玻璃及其制备方法和应用 |
CN109231819B (zh) * | 2018-10-16 | 2021-04-09 | 东旭光电科技股份有限公司 | 无碱铝硅酸盐玻璃及其制备方法和应用 |
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2017
- 2017-12-13 CN CN201711330222.XA patent/CN108129020B/zh active Active
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2018
- 2018-11-14 US US16/772,671 patent/US11795100B2/en active Active
- 2018-11-14 WO PCT/CN2018/115460 patent/WO2019114486A1/zh active Application Filing
- 2018-11-14 JP JP2020552082A patent/JP7087102B2/ja active Active
- 2018-11-14 KR KR1020207019357A patent/KR102578590B1/ko active IP Right Grant
Patent Citations (4)
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---|---|---|---|---|
JP2006036626A (ja) * | 2004-06-23 | 2006-02-09 | Nippon Electric Glass Co Ltd | 無アルカリガラス基板 |
CN101092280A (zh) * | 2007-06-07 | 2007-12-26 | 河南安彩高科股份有限公司 | 铝硼硅酸盐玻璃组合物及其应用 |
CN101066836A (zh) * | 2007-06-11 | 2007-11-07 | 中国洛阳浮法玻璃集团有限责任公司 | Tft基板玻璃 |
CN105859128A (zh) * | 2016-04-06 | 2016-08-17 | 芜湖东旭光电装备技术有限公司 | 一种玻璃用组合物、低表面张力无碱玻璃及其制备方法和应用 |
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JP2021508666A (ja) | 2021-03-11 |
WO2019114486A1 (zh) | 2019-06-20 |
KR102578590B1 (ko) | 2023-09-15 |
JP7087102B2 (ja) | 2022-06-20 |
US20200325062A1 (en) | 2020-10-15 |
US11795100B2 (en) | 2023-10-24 |
CN108129020A (zh) | 2018-06-08 |
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