CN108122881A - 膜上芯片以及包括该膜上芯片的显示装置 - Google Patents

膜上芯片以及包括该膜上芯片的显示装置 Download PDF

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CN108122881A
CN108122881A CN201711189241.5A CN201711189241A CN108122881A CN 108122881 A CN108122881 A CN 108122881A CN 201711189241 A CN201711189241 A CN 201711189241A CN 108122881 A CN108122881 A CN 108122881A
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film
resin
basement membrane
chip
coating
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CN108122881B (zh
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宋智勋
金珉奭
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LG Display Co Ltd
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LG Display Co Ltd
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Abstract

公开了膜上芯片以及包括该膜上芯片的显示装置。该膜上芯片包括：第一基膜；第二基膜，所述第二基膜位于所述第一基膜上；膜焊盘部，所述膜焊盘部位于所述第二基膜的至少一侧并暴露于所述第一基膜的外侧；以及涂层，所述涂层位于所述第一基膜的一个表面上。

Description

膜上芯片以及包括该膜上芯片的显示装置
技术领域
本公开涉及膜上芯片以及包括该膜上芯片的显示装置。
背景技术
随着信息社会的发展，对用于显示图像的显示装置的需求以各种方式不断增加。在显示装置领域中，大型阴极射线管(CRT)已经被具有薄外形、轻重量和大尺寸屏幕的优点的平板显示器(FPD)迅速取代。平板显示器的示例包括液晶显示器(LCD)、等离子体显示面板(PDP)、有机发光二极管(OLED)显示器和电泳显示器(EPD)。
OLED显示器包括能够自己发光的自发光元件，并且具有快速响应时间、高发光效率、高亮度和宽视角的优点。具体地，OLED显示器可在柔性塑料基板上制造。此外，与等离子体显示面板或无机电致发光显示器相比，OLED显示器具有更低的驱动电压、更低的功耗和更好的色调的优点。
在柔性塑料基板上制造OLED显示器时，将聚酰亚胺涂覆在支承基板(例如，玻璃基板)上，在由聚酰亚胺制成的柔性基板上制造诸如薄膜晶体管和有机发光二极管这样的元件，并且膜上芯片(COF)附接到焊盘部。执行用于将支承基板与柔性基板分离的工序，由此制造包括柔性基板的OLED显示器。
通过将各向异性导电膜(ACF)形成在膜上芯片上，然后通过带式自动焊接(TAB)工艺将膜上芯片附接到焊盘部来执行用于将膜上芯片附接到OLED显示器的焊盘部的工序。TAB工艺对焊盘部、各向异性导电膜和膜上芯片加压，并且通过各向异性导电膜的导电球将焊盘部电连接到膜上芯片。然而，各向异性导电膜根据各向异性导电膜的量或压力从基板的端部溢出。因此，难以在随后的工序中将通过各向异性导电膜附接的支承基板和柔性基板彼此分离。
发明内容
本公开提供一种膜上芯片以及包括该膜上芯片的显示装置，其能够通过将由与各向异性导电膜相同种类的材料制成的涂层形成在膜上芯片上来防止各向异性导电膜从基板溢出。
本公开还提供一种膜上芯片以及包括该膜上芯片的显示装置，其能够通过向玻璃基板的分离工序提供可靠性来防止有缺陷的驱动并提高生产率。
在一方面，提供一种膜上芯片，该膜上芯片包括：第一基膜；第二基膜，所述第二基膜位于所述第一基膜上；膜焊盘部，所述膜焊盘部位于所述第二基膜的至少一侧并暴露于所述第一基膜的外侧；以及涂层，所述涂层位于所述第一基膜的一个表面上。
所述涂层位于所述第一基膜的与其上设置有所述第二基膜的表面相反的表面上。
所述涂层由热固性树脂或热塑性树脂制成，所述热固性树脂包括双酚A环氧树脂、双酚F环氧树脂、酚醛环氧树脂、苯酚树脂、脲醛树脂、三聚氰胺树脂、不饱和聚酯树脂、间苯二酚树脂中的至少一种，所述热塑性树脂包括饱和聚酯树脂、乙烯基树脂、丙烯酸树脂、聚烯烃树脂、聚醋酸乙烯(PVA)树脂、聚碳酸酯树脂、纤维素树脂、酮树脂、苯乙烯树脂中的至少一种。
所述涂层的宽度是所述膜焊盘部的宽度的两倍以上。
所述涂层包括在与所述膜焊盘部相邻的一侧的倾斜部。
所述涂层包括表面上的多个不平坦部。
所述涂层还位于所述第一基膜的侧部和所述第二基膜的侧部。
在另一方面，提供一种显示装置，该显示装置包括：柔性基板；显示部，所述显示部位于所述柔性基板上，所述显示部包括有机发光二极管；焊盘部，所述焊盘部位于所述柔性基板的一个边缘处；以及膜上芯片，所述膜上芯片通过各向异性导电膜连接到所述焊盘部，其中，所述膜上芯片包括：第一基膜；第二基膜，所述第二基膜位于所述第一基膜上；膜焊盘部，所述膜焊盘部位于所述第二基膜的至少一侧并暴露于所述第一基膜的外侧；以及涂层，所述涂层位于所述第一基膜的一个表面上，所述涂层由与所述各向异性导电膜相同种类的材料制成。
所述各向异性导电膜和所述涂层由热固性树脂或热塑性树脂制成，所述热固性树脂包括双酚A环氧树脂、双酚F环氧树脂、酚醛环氧树脂、苯酚树脂、脲醛树脂、三聚氰胺树脂、不饱和聚酯树脂、间苯二酚树脂中的至少一种，所述热塑性树脂包括饱和聚酯树脂、乙烯基树脂、丙烯酸树脂、聚烯烃树脂、聚醋酸乙烯(PVA)树脂、聚碳酸酯树脂、纤维素树脂、酮树脂、苯乙烯树脂中的至少一种。
所述各向异性导电膜被设置成从所述焊盘部延伸到所述膜上芯片的所述涂层。
附图说明
附图被包括以提供对本发明的进一步理解，并且被并入本说明书中并构成本说明书的一部分，附图例示了本发明的实施方式，并且与本说明书一起用来解释本发明的原理。在附图中：
图1是根据本公开的实施方式的有机发光二极管(OLED)显示器的示意性框图；
图2例示了子像素的电路配置的第一示例；
图3例示了子像素的电路配置的第二示例；
图4是根据本公开的实施方式的OLED显示器的平面图；
图5是例示根据本公开的实施方式的OLED显示器的子像素的截面图；
图6是图4所示的焊盘部的放大的平面图；
图7是沿图6的线I-I'截取的截面图；
图8是例示用于将支承基板与基板分离的工序的截面图；
图9是例示各向异性导电膜的溢出的图像；
图10是根据本公开的实施方式的膜上芯片的平面图；
图11是根据本公开的实施方式的膜上芯片的截面图；
图12是根据本公开的另一实施方式的膜上芯片的平面图；
图13和图14是图11的区域AA的放大图；
图15是例示各向异性导电膜的扩展的截面图；
图16是根据本公开的另一实施方式的膜上芯片的截面图；
图17是例示将膜上芯片附接到基板的截面图；
图18是根据本公开的另一实施方式的膜上芯片的平面图；
图19是图18的截面图；
图20是显示装置的驱动图像；
图21是例示根据本公开的实施方式的显示装置的支承基板的分离工序的截面图；
图22是例示根据本公开的实施方式的显示装置的各向异性导电膜的扩展的图像；以及
图23是根据本公开的实施方式的显示装置的驱动图像。
具体实施方式
现在将详细参考本公开的实施方式，在附图中例示了本公开的实施方式的示例。在任何可能的情况下，相同的附图标记在整个附图中被用于指代相同或相似的部件。将注意到如果确定对已知技术的详细描述会误导本公开的实施方式，则将省略对已知技术的详细描述。以下说明中使用的各个元件的名称仅为了便于书写说明书而选择的，并且可因此与实际产品中使用的名称不同。
根据本公开的实施方式的显示装置是其中显示元件形成在柔性基板上的柔性显示装置。柔性显示装置的示例包括有机发光二极管(OLED)显示器、液晶显示器(LCD)和电泳显示器。使用OLED显示器作为示例来描述本公开的实施方式。OLED显示器包括在用作阳极的第一电极与用作阴极的第二电极之间的由有机材料形成的有机层。OLED显示器是被配置为通过在有机层内部将从第一电极接收的空穴与从第二电极接收的电子复合而形成空穴-电子对(即，激子)，并且通过在激子返回到基级时产生的能量而发光的自发光显示装置。
下面参照图1至图23描述本公开的实施方式。
图1是根据本公开的实施方式的OLED显示器的示意性框图。图2例示了子像素的电路配置的第一示例。图3例示了子像素的电路配置的第二示例。
参照图1，根据本公开的实施方式的OLED显示器包括图像处理单元10、定时控制器20、数据驱动器30、选通驱动器40和显示面板50。
图像处理单元10输出从外部提供的数据信号DATA和数据使能信号DE。除了数据使能信号DE之外，图像处理单元10还可输出垂直同步信号、水平同步信号和时钟信号中的一个或更多个。为了便于说明，未示出这些信号。图像处理单元10作为集成电路(IC)形成在系统电路板上。
定时控制器20从图像处理单元10接收数据信号DATA和包括数据使能信号DE或垂直同步信号、水平同步信号、时钟信号等的驱动信号。
定时控制器20基于驱动信号输出用于控制选通驱动器40的操作定时的选通定时控制信号GDC和用于控制数据驱动器30的操作定时的数据定时控制信号DDC。定时控制器20可作为IC形成在控制电路板上。
数据驱动器30响应于从定时控制器20提供的数据定时控制信号DDC对从定时控制器20接收的数据信号DATA进行采样和锁存，并使用伽马参考电压来转换采样和锁存后的数据信号DATA。数据驱动器30将转换后的数据信号DATA输出到数据线DL1至DLn。数据驱动器30作为IC附接到基板。
选通驱动器40响应于从定时控制器20提供的选通定时控制信号GDC，在对选通电压的电平进行移位的同时输出选通信号。选通驱动器40将选通信号输出到选通线GL1至GLm。选通驱动器40作为IC形成在选通电路板上，或者以面板内选通(GIP)方式形成在显示面板50上。
显示面板50响应于从数据驱动器30接收到的数据信号DATA和从选通驱动器40接收到的选通信号来显示图像。显示面板50包括用于显示图像的子像素SP。
如图2所示，每个子像素可包括开关晶体管SW、驱动晶体管DR、补偿电路CC和有机发光二极管(OLED)。OLED基于由驱动晶体管DR生成的驱动电流进行操作以发光。
开关晶体管SW响应于通过选通线GL1提供的选通信号执行开关操作，使得通过第一数据线DL1提供的数据信号作为数据电压被存储在电容器Cst中。驱动晶体管DR基于存储在电容器Cst中的数据电压使得驱动电流能够在高电位电力线VDD与低电位电力线GND之间流动。补偿电路CC是用于补偿驱动晶体管DR的阈值电压的电路。连接到开关晶体管SW或驱动晶体管DR的电容器可安装在补偿电路CC内部。补偿电路CC包括一个或更多个薄膜晶体管(TFT)以及电容器。补偿电路CC的配置可根据补偿方法被不同地改变。将对补偿电路CC进行简要说明。
如图3所示，包括补偿电路CC的子像素还可包括用于驱动补偿TFT的信号线以及用于提供预定信号或电力的电力线。选通线GL1可包括向开关晶体管SW提供选通信号的1-1选通线GL1a以及用于驱动包括在子像素中的补偿TFT的1-2选通线GL1b。所添加的电力线可被限定为用于将子像素的预定节点初始化为预定电压的初始化电力线INIT。然而，这仅仅是示例，并且本公开的实施方式不限于此。
图2和图3通过示例例示了一个子像素包括补偿电路CC。然而，当要补偿的对象(例如，数据驱动器30)设置在子像素外部时，可省略补偿电路CC。子像素具有其中设置有开关晶体管SW、驱动晶体管DR、电容器和OLED的2T(晶体管)1C(电容器)的配置。然而，当将补偿电路CC添加到子像素时，子像素可具有诸如3T1C、4T2C、5T2C、6T2C、7T2C等的各种配置。另外，图2和图3通过示例例示了补偿电路CC设置在开关晶体管SW与驱动晶体管DR之间。然而，补偿电路CC还可设置在驱动晶体管DR与OLED之间。补偿电路CC的位置和结构不限于图2和图3所示的位置和结构。
图4是根据本公开的实施方式的OLED显示器的平面图。图5是例示根据本公开的实施方式的OLED显示器的子像素的截面图。图6是图4所示的焊盘部的放大的平面图。图7是沿图6的线I-I'截取的截面图。图8是例示用于将支承基板与基板分离的工序的截面图。图9是例示各向异性导电膜的溢出的图像。
参照图4，OLED显示器包括柔性基板PI、显示部A/A、在显示部A/A外侧设置在柔性基板PI的右侧的GIP驱动器GIP、以及设置在柔性基板PI的下侧的焊盘部PD。显示部A/A可包括多个子像素SP。例如，显示部A/A的R(红色)子像素、G(绿色)子像素和B(蓝色)子像素或者R、G、B和W(白色)子像素可发光以表示全色。GIP驱动器GIP设置在显示部A/A的一侧(例如，右侧)，并向显示部A/A施加选通驱动信号。膜上芯片COF附接到设置在显示部A/A的一侧(例如，下侧)的焊盘部PD。数据信号和电力通过膜上芯片COF被施加到与显示部A/A连接的多条信号线(未示出)。
下面参照图5描述根据本公开的实施方式的OLED显示器的子像素SP的截面结构。
在根据本公开的实施方式的OLED显示器中，在柔性基板PI上设置第一缓冲层BUF1。柔性基板PI可以是例如聚酰亚胺基板。因此，根据本公开的实施方式的柔性基板PI可具有柔性特性。第一缓冲层BUF1保护后续工艺中形成的薄膜晶体管不受从柔性基板PI排出的杂质(例如，碱离子)的影响。第一缓冲层BUF1可由硅氧化物(SiOx)层、硅氮化物(SiNx)层或其多层形成。
在第一缓冲层BUF1上设置屏蔽层LS。屏蔽层LS防止通过使用聚酰亚胺基板产生的面板驱动电流的降低。在屏蔽层LS上设置第二缓冲层BUF2。第二缓冲层BUF2保护在后续工艺中形成的薄膜晶体管不受从屏蔽层LS排出的杂质(例如，碱离子)的影响。第二缓冲层BUF2可由硅氧化物(SiOx)层、硅氮化物(SiNx)层或其多层形成。
半导体层ACT设置在第二缓冲层BUF2上，并且可由硅半导体或氧化物半导体形成。硅半导体可包括非晶硅或结晶的多晶硅。多晶硅具有高迁移率(例如，大于100cm2/Vs)、低功耗和优异的可靠性。因此，可将多晶硅应用到用于驱动元件的选通驱动器和/或复用器(MUX)或用于OLED显示器的每个像素的驱动TFT。因为氧化物半导体具有低的截止电流，所以氧化物半导体适合用于具有短导通时间和长截止时间的开关TFT。此外，因为氧化物半导体由于低截止电流而增加了像素的电压保持时间，所以氧化物半导体适合用于需要低速驱动和/或低功耗的显示装置。此外，半导体层ACT包括各自包含p型或n型杂质的漏极区域和源极区域，并且还包括在漏极区域与源极区域之间的沟道区域。
栅极绝缘层GI设置在半导体层ACT上，并且可由硅氧化物(SiOx)层、硅氮化物(SiNx)层或其多层形成。栅极GA设置在栅极绝缘层GI上与半导体层ACT的预定区域(即，注入杂质时的沟道区域)对应的位置处。栅极130可由钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)、钕(Nd)、铜(Cu)中的一种或其组合形成。此外，栅极GA可以是由钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)、钕(Nd)、铜(Cu)中的一种或其组合形成的多层。例如，栅极GA可被形成为Mo/Al-Nd或Mo/Al的双层。
层间介电层ILD位于栅极GA上并且与栅极GA绝缘。层间介电层ILD可由硅氧化物(SiOx)层、硅氮化物(SiNx)层或其多层形成。暴露半导体层ACT的一部分的接触孔CH形成在分别形成层间介电层ILD和栅极绝缘层GI的一部分处。
漏极DE和源极SE设置在层间介电层ILD上。漏极DE通过使半导体层ACT的漏极区域暴露的接触孔CH连接到半导体层ACT，而源极SE通过使半导体层ACT的源极区域暴露的接触孔CH连接到半导体层ACT。源极SE和漏极DE中的每一个可被形成为单层或多层。当源极SE和漏极DE中的每一个被形成为单层时，源极SE和漏极DE中的每一个可由钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)、钕(Nd)、铜(Cu)中的一种或其组合形成。当源极SE和漏极DE中的每一个被形成为多层时，源极SE和漏极DE中的每一个可被形成为Mo/Al-Nd的双层或被形成为Ti/Al/Ti、Mo/Al/Mo或Mo/Al-Nd/Mo的三层。因此，形成包括半导体层ACT、栅极GA、源极SE和漏极DE的薄膜晶体管TFT。
此外，在包括薄膜晶体管TFT的柔性基板PI上设置钝化层PAS。钝化层PAS是保护钝化层PAS下面的组件的绝缘层，并且可由硅氧化物(SiOx)层、硅氮化物(SiNx)层或其多层形成。在钝化层PAS上设置滤色器CF。滤色器CF用于将由有机发光二极管OLED发出的白光转换成红光、绿光或蓝光。在滤色器CF上设置涂覆层OC。涂覆层OC可以是用于降低底层结构的高度差(或阶梯覆盖)的平整层，并且可由诸如聚酰亚胺、苯并环丁烯基树脂和丙烯酸酯这样的有机材料形成。例如，涂覆层OC可通过旋涂玻璃(SOG)方法形成，以用于以液态涂覆有机材料，然后固化有机材料。
在涂覆层OC和钝化层PAS的一部分中设置使薄膜晶体管TFT的漏极DE暴露的通孔VIA。在涂覆层OC上设置有机发光二极管OLED。更具体地，在涂覆层OC上设置第一电极ANO。第一电极ANO用作像素电极，并且通过通孔VIA连接到薄膜晶体管TFT的漏极DE。第一电极ANO是阳极，并且由诸如铟锡氧化物(ITO)、铟锌氧化物(IZO)和锌氧化物(ZnO)这样的透明导电材料形成。当第一电极ANO是反射电极时，第一电极ANO还可包括反射层。反射层可由铝(Al)、铜(Cu)、银(Ag)、镍(Ni)、钯(Pd)或其组合形成。例如，反射层可由Ag/Pd/Cu(APC)合金形成。
此外，在包括第一电极ANO的柔性基板PI上设置限定像素的堤层BNK。堤层BNK可由诸如聚酰亚胺、苯并环丁烯基树脂和丙烯酸酯这样的有机材料形成。堤层BNK包括使第一电极ANO暴露的像素限定部OP。与第一电极ANO接触的有机层OLE设置在柔性基板PI的前表面处。有机层OLE是电子和空穴在其中复合并发光的层。空穴注入层和/或空穴传输层可设置在有机层OLE与第一电极ANO之间，而电子注入层和/或电子传输层可设置在有机层OLE上。
第二电极CAT设置在有机层OLE上，并且可设置在显示部A/A的整个表面上(参见图4)。此外，第二电极CAT是阴极，并且可由具有低功函数的镁(Mg)、钙(Ca)、铝(Al)、银(Ag)或其组合形成。当第二电极CAT是透射电极时，第二电极CAT可足够薄以透射光。此外，当第二电极CAT是反射电极时，第二电极CAT可足够厚以反射光。
上保护构件UP通过粘合层ADL附接到柔性基板PI的上表面，在柔性基板PI上形成有薄膜晶体管TFT和有机发光二极管OLED。上保护构件UP可以是透明柔性基板或金属薄膜。此外，下保护构件LP通过粘合层ADL附接到柔性基板PI的下表面。由于下保护构件LP必须透射光，所以下保护构件LP可由透明塑料膜形成。
下面参照图6和图7描述焊盘部PD。第一缓冲层BUF1设置在柔性基板PI上，第二缓冲层BUF2设置在第一缓冲层BUF1上。栅极绝缘层GI设置在第二缓冲层BUF2上，层间介电层ILD设置在栅极绝缘层GI上。源极金属层SML设置在层间介电层ILD上。源极金属层SML是从显示部A/A延伸的源极信号线。钝化层PAS设置在源极金属层SML上。钝化层PAS具有使源极金属层SML的一部分暴露的第一接触孔PCNT1。焊盘电极PEL设置在钝化层PAS上。焊盘电极PEL可由与显示部的第一电极相同的材料形成，并且通过钝化层PAS的第一接触孔PCNT1连接到源极金属层SML。因此，构造出包括第一缓冲层BUF1、第二缓冲层BUF2、栅极绝缘层GI、层间介电层ILD、源极金属层SML、钝化层PAS和焊盘电极PEL在内的焊盘部PD。
膜上芯片COF通过各向异性导电膜ACF附接到其上设置有焊盘部PD的柔性基板PI。膜上芯片COF可以是安装有驱动器IC的柔性印刷电路板。膜上芯片COF包括基膜BF和基膜BF上的膜线FSL。膜上芯片COF附接到各向异性导电膜ACF，然后通过带式自动焊接(TAB)工艺附接到焊盘部PD。TAB工艺对柔性基板PI、各向异性导电膜ACF和膜上芯片COF加压，并且通过各向异性导电膜ACF的导电球CB将焊盘部PD电连接到膜上芯片COF。
参照图8和图9，根据本公开的实施方式的显示装置在对膜上芯片COF执行TAB工艺之后，执行用于对支承柔性基板PI的支承基板GLS进行分离的工序。然而，在TAB工艺中，各向异性导电膜ACF根据各向异性导电膜ACF的量或压力从柔性基板PI的端部溢出。因此，难以将通过各向异性导电膜ACF附接的支承基板GLS和聚酰亚胺基板PI彼此分离。
因此，本公开的实施方式提供了这样的膜上芯片COF，其能够通过将由与各向异性导电膜ACF相同种类的材料制成的涂层形成在膜上芯片COF上来防止各向异性导电膜ACF溢出到支承基板GLS。
图10是根据公开的实施方式的膜上芯片的平面图。图11是根据本公开的实施方式的膜上芯片的截面图。图12是根据本公开的另一实施方式的膜上芯片的平面图。图13和图14是图11的区域AA的放大图。图15是例示各向异性导电膜的扩展的截面图。
参照图10和图11，根据本公开的一个实施方式的膜上芯片COF包括彼此附接的第一基膜BF1和第二基膜BF2、设置在第一基膜BF1的一个表面上的驱动器芯片S-IC以及分别设置在第二基膜BF2的两侧的膜焊盘部FP。连接到驱动器芯片S-IC的信号线设置在膜焊盘部FP上。
第一基膜BF1和第二基膜BF2可由具有柔性特性的例如聚碳酸酯、聚对苯二甲酸乙二醇酯、聚酰亚胺、聚酰胺、聚丙烯酸酯、聚甲基丙烯酸甲酯等的材料形成。多条信号线设置在第一基膜BF1与第二基膜BF2之间，并连接到驱动器芯片S-IC。第一基膜BF1和第二基膜BF2中的一个(例如，第一基膜BF1)的尺寸小于第一基膜BF1和第二基膜BF2中的另一个(例如，第二基膜BF2)的尺寸，因此多条信号线被第一基膜BF1暴露。所暴露的信号线在第二基膜BF2的两侧形成膜焊盘部FP。
本公开的实施方式包括第一基膜BF1的一个表面上的涂层SRS。涂层SRS用于将各向异性导电膜引导至膜上芯片COF，并且由与各向异性导电膜相同的材料制成。通常，当在由材料“A”制成的层上再次涂覆材料“A”时，由于相同材料之间的润湿性被提高，因此易于执行涂覆。润湿性是指当水滴落在表面上时一滴水在表面上扩展的程度。例如，当水滴与表面之间的接触角大时，可以说润湿性差。此外，当水滴与表面之间的接触角小时，可以说润湿性良好。本公开的实施方式可通过在膜上芯片COF上形成由与各向异性导电膜相同的材料制成的涂层SRS，利用润湿性将各向异性导电膜进一步扩展到涂层SRS。
各向异性导电膜由具有绝缘性的粘合剂制成，并且包括热固性树脂和热塑性树脂中的至少一种。热固性树脂的示例可包括双酚A环氧树脂、双酚F环氧树脂、酚醛环氧树脂、苯酚树脂、脲醛树脂、三聚氰胺树脂、不饱和聚酯树脂、间苯二酚树脂等。然而，实施方式不限于此。热塑性树脂的示例可包括饱和聚酯树脂、乙烯基树脂、丙烯酸树脂、聚烯烃树脂、聚醋酸乙烯(PVA)树脂、聚碳酸酯树脂、纤维素树脂、酮树脂、苯乙烯树脂等。然而，实施方式不限于此。
根据本公开的实施方式的涂层SRS由与各向异性导电膜相同的材料制成。例如，当各向异性导电膜由环氧基树脂制成时，涂层SRS可由相同的环氧基树脂制成。在这种情况下，当涂层SRS由与各向异性导电膜具有相同化学式的相同材料制成时，各向异性导电膜进一步扩展至涂层SRS上。然而，实施方式不限于此。涂层SRS可由与各向异性导电膜相同种类的树脂制成。例如，当各向异性导电膜由环氧基树脂支承时，涂层SRS也可由环氧基树脂制成。当各向异性导电膜由丙烯酸基树脂制成时，涂层SRS可由丙烯酸基树脂制成。
根据本公开的实施方式的涂层SRS可如图10所示涂覆在膜上芯片COF的第一基膜BF1的整个表面上，或者可如图12所示涂覆在膜上芯片COF的第一基膜BF1的一部分上。如图12所示，根据本公开的实施方式的涂层SRS可从第一基膜BF1的与膜焊盘部FP相邻的边缘开始涂覆，并且可具有宽度W2，宽度W2比膜焊盘部FP的宽度W1两倍多。
更具体地，膜上芯片COF具有总共两个膜焊盘部FP，其包括连接至基板的焊盘部的膜焊盘部和连接至印刷电路板(PCB)的膜焊盘部。根据本公开的实施方式的涂层SRS与连接到基板的焊盘部的膜焊盘部FP相邻设置，并且可防止各向异性导电膜溢出到基板的下部。根据本公开的实施方式的涂层SRS可从第一基膜BF1的与膜焊盘部FP相邻的边缘开始涂覆，并且可具有大于膜焊盘部FP的宽度W1的两倍的宽度W2。在用于将膜上芯片COF附接到基板的TAB工艺中，各向异性导电膜展开。为了完全覆盖各向异性导电膜的扩展，涂层SRS可具有大于膜焊盘部FP的宽度W1的两倍的宽度W2。
根据本公开的实施方式的涂层SRS可在一侧具有倾斜部SL，使得各向异性导电膜可良好地扩展到涂层SRS。
如图13所示，涂层SRS的一侧的倾斜部SL被形成为不具有阶梯部的连续倾斜形状。在这种情况下，倾斜部SL具有与第一基膜BF1的表面的约10°至90°的锥角，并且可使各向异性导电膜良好地扩展到涂层SRS。此外，如图14所示，涂层SRS的一侧的倾斜部SL被形成为具有阶梯部的非连续倾斜形状。例如，倾斜部SL可被形成为阶梯形状。如图15所示，当涂层SRS包括倾斜部SL时，在TAB工艺中，各向异性导电膜可在各向异性导电膜ACF首先接触涂层SRS的边界处沿着倾斜部SL良好地扩展。
如上所述，根据本公开的实施方式的膜上芯片和包括该膜上芯片的显示装置包括这样的涂层，该涂层由与各向异性导电膜相同种类的材料制成并且可引导各向异性导电膜以使用相同种类的材料具有良好的润湿性的特性来良好地扩展到该涂层。
因此，本公开的实施方式可通过防止从基板溢出的各向异性导电膜在用于将膜上芯片附接到基板的TAB工艺中将支承基板附接到基板，来容易地执行用于分离支承基板的工序。
此外，本发明的实施方式可防止在支承基板和基板通过各向异性导电膜彼此附接时的用于将支承基板与基板物理分离的工序中产生的有缺陷的驱动，从而提高生产率。
图16是根据本公开的另一实施方式的膜上芯片的截面图。图17是例示将膜上芯片附接到基板的截面图。图18是根据本公开的另一实施方式的膜上芯片的平面图。图19是图18的截面图。
参照图16，在根据本公开的另一实施方式的膜上芯片COF中，涂层SRS设置在第一基膜BF1的一个表面上，并且还可设置在膜上芯片COF的侧表面。即，涂层SRS可设置在第二基膜BF2的侧表面以及第一基膜BF1的侧表面。
参照图17，当膜上芯片COF附接到柔性基板PI时，各向异性导电膜ACF扩展到膜上芯片COF的侧表面以及膜上芯片COF的下部。在这种情况下，各向异性导电膜ACF沿着膜上芯片COF的下表面和侧表面上升。因此，本公开的实施方式包括在膜上芯片COF的侧表面上的涂层SRS，以便使沿着膜上芯片COF的侧表面上升的各向异性导电膜ACF良好地扩展。
根据本公开的实施方式的涂层SRS可具有表面上的多个不平坦部。
参照图18和图19，第一基膜BF1上的涂层SRS具有表面上的多个不平坦部PG。多个不平坦部PG被用于增加涂层SRS的表面积，并且通过增加各向异性导电膜ACF与涂层SRS之间的接触面积来改进各向异性导电膜ACF的扩展。不平坦部PG被设置成朝向驱动器芯片S-IC延伸。因此，各向异性导电膜ACF可沿着不平坦部PG良好地扩展。
图18通过示例例示了涂层SRS仅形成在第一基膜BF1的一部分上。然而，当涂层SRS如图10所示形成在第一基膜BF1的整个表面上时，涂层SRS可具有不平坦部PG。此外，图19通过示例例示了矩形不平坦部PG。然而，实施方式不限于此。不平坦部PG可具有包括圆形、三角形、五边形等的各种形状，只要它们能够增加涂层SRS的表面积即可。
图20是显示装置的驱动图像。图21是例示根据公开的实施方式的显示装置的支承基板的分离工序的截面图。图22是例示根据本公开的实施方式的显示装置的各向异性导电膜的扩展的图像。图23是根据本公开的实施方式的显示装置的驱动图像。
如以上参照图8和图9所述，在膜上芯片COF的TAB工艺中，各向异性导电膜ACF从柔性基板PI溢出，并且附接到柔性基板PI下方的支承基板GLS。在这种情况下，由于支承基板GLS在支承基板GLS的分离工序中附接到柔性基板PI，所以支承基板GLS必须与柔性基板PI物理分离。然而，如图20所示，当支承基板与基板物理分离时，焊盘部在驱动显示装置时被损坏，从而导致线路缺陷。
另一方面，如图21所示，根据本公开的实施方式的显示装置不会将各向异性导电膜ACF扩展到支承基板GLS，这是因为各向异性导电膜ACF在膜上芯片COF的TAB工艺中沿着膜上芯片COF的涂层SRS扩展。
从图22中可以看出，与图9相比，膜上芯片上的各向异性导电膜的扩展面积明显增加。因此，良好地执行了基板与支承基板之间的分离工序，并且不需要物理分离工序。如图23所示，当不执行物理分离工序时，显示装置的焊盘部不被破坏。结果，当驱动显示装置时，由于显示装置没有缺陷，因此可提高显示装置的显示质量。
尽管已经参照本公开的多个示例性实施方式描述了实施方式，但是应该理解的是，本领域技术人员能够设计出将落入本公开的原理的范围内的众多其它修改和实施方式。更具体地，可在本公开、附图和所附的权利要求的范围内对主题组合布置的组成部分和/或布置进行各种变型和修改。除了对这些组成部分和/或布置的变型和修改之外，对于本领域技术人员而言替代使用也将是显而易见的。

Claims (15)

1.一种膜上芯片，该膜上芯片包括：
第一基膜；
第二基膜，所述第二基膜位于所述第一基膜上；
膜焊盘部，所述膜焊盘部位于所述第二基膜的至少一侧并暴露于所述第一基膜的外侧；以及
涂层，所述涂层位于所述第一基膜的一个表面上。
2.根据权利要求1所述的膜上芯片，其中，所述第一基膜的所述一个表面与所述第一基膜的另一表面相对，其中所述第二基膜位于所述第一基膜的所述另一表面。
3.根据权利要求1所述的膜上芯片，其中，所述涂层由热固性树脂或热塑性树脂制成，所述热固性树脂包括双酚A环氧树脂、双酚F环氧树脂、酚醛环氧树脂、苯酚树脂、脲醛树脂、三聚氰胺树脂、不饱和聚酯树脂、间苯二酚树脂中的至少一种，所述热塑性树脂包括饱和聚酯树脂、乙烯基树脂、丙烯酸树脂、聚烯烃树脂、聚醋酸乙烯PVA树脂、聚碳酸酯树脂、纤维素树脂、酮树脂、苯乙烯树脂中的至少一种。
4.根据权利要求1所述的膜上芯片，其中，所述涂层的宽度是所述膜焊盘部的宽度的两倍以上。
5.根据权利要求1所述的膜上芯片，其中，所述涂层包括在与所述膜焊盘部相邻的一侧上的倾斜部。
6.根据权利要求1所述的膜上芯片，其中，所述涂层包括表面上的多个不平坦部。
7.根据权利要求1所述的膜上芯片，其中，所述涂层还位于所述第一基膜的侧表面和所述第二基膜的侧表面。
8.根据权利要求1所述的膜上芯片，其中，所述第一基膜具有比所述第二基膜的尺寸更小的尺寸。
9.根据权利要求1所述的膜上芯片，其中，所述涂层由各向异性导电材料制成。
10.一种显示装置，该显示装置包括：
柔性基板；
显示部，所述显示部位于所述柔性基板上，所述显示部包括有机发光二极管；
焊盘部，所述焊盘部位于所述柔性基板的一个边缘处；以及
膜上芯片，所述膜上芯片通过各向异性导电膜连接到所述焊盘部，
其中，所述膜上芯片包括：
第一基膜；
第二基膜，所述第二基膜位于所述第一基膜上；
膜焊盘部，所述膜焊盘部位于所述第二基膜的至少一侧并暴露于所述第一基膜的外侧；以及
涂层，所述涂层位于所述第一基膜的一个表面上，所述涂层由与所述各向异性导电膜相同种类的材料制成。
11.根据权利要求10所述的显示装置，其中，所述各向异性导电膜和所述涂层由热固性树脂或热塑性树脂制成，所述热固性树脂包括双酚A环氧树脂、双酚F环氧树脂、酚醛环氧树脂、苯酚树脂、脲醛树脂、三聚氰胺树脂、不饱和聚酯树脂、间苯二酚树脂中的至少一种，所述热塑性树脂包括饱和聚酯树脂、乙烯基树脂、丙烯酸树脂、聚烯烃树脂、聚醋酸乙烯PVA树脂、聚碳酸酯树脂、纤维素树脂、酮树脂、苯乙烯树脂中的至少一种。
12.根据权利要求10所述的显示装置，其中，所述各向异性导电膜被设置为从所述焊盘部延伸到所述膜上芯片的所述涂层。
13.根据权利要求10所述的显示装置，其中，所述膜上芯片经由所述膜焊盘部与所述焊盘部连接。
14.根据权利要求10所述的显示装置，其中，所述涂层由与所述各向异性导电膜相同的材料制成。
15.根据权利要求10所述的显示装置，其中，所述涂层包括在与所述膜焊盘部相邻的一侧上的倾斜部。
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