CN108110057A - Super-junction metal oxide field effect transistor - Google Patents
Super-junction metal oxide field effect transistor Download PDFInfo
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- CN108110057A CN108110057A CN201711328190.XA CN201711328190A CN108110057A CN 108110057 A CN108110057 A CN 108110057A CN 201711328190 A CN201711328190 A CN 201711328190A CN 108110057 A CN108110057 A CN 108110057A
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 27
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 27
- 230000005669 field effect Effects 0.000 title abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000407 epitaxy Methods 0.000 claims abstract description 13
- 230000007704 transition Effects 0.000 claims description 2
- QVGXLLKOCUKJST-NJFSPNSNSA-N oxygen-18 atom Chemical compound [18O] QVGXLLKOCUKJST-NJFSPNSNSA-N 0.000 claims 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000005242 forging Methods 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 23
- 230000005684 electric field Effects 0.000 description 7
- XLYOFNOQVPJJNP-NJFSPNSNSA-N ((18)O)water Chemical compound [18OH2] XLYOFNOQVPJJNP-NJFSPNSNSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
Abstract
The present invention provides a kind of super-junction metal oxide field effect transistor.The transistor is divided into active region and the resistance to intermediate pressure section positioned at active region periphery, the pressure-resistant region division is adjacent to the transitional region of the active region and positioned at the terminal area of transitional region periphery, the transistor further includes N-type substrate, N-type epitaxy layer in the N-type substrate, p-type positioned at the N-type epitaxy layer surface of the resistance to intermediate pressure section adulterates knot, the connection p-type doping knot bottom and the first P-doped zone extended towards the N-type substrate in the N-type epitaxy layer of the transitional region, the second P-doped zone along the direction extension parallel to the N-type substrate in the N-type epitaxy layer of the p-type doping side of forging of the terminal area.
Description
【Technical field】
The present invention relates to technical field of semiconductor device, particularly, are related to a kind of super-junction metal oxide field effect crystal
Pipe.
【Background technology】
Super-junction metal oxide field effect transistor is a kind of insulated gate knot with metal oxide semiconductor transistor
Structure advantage has the advantages that the new device of high current density low on-resistance simultaneously, it is a kind of to be used to effectively reduce tradition
The power semiconductor of the conduction loss of power metal oxide semiconductor field-effect transistor.It is former based on charge balance
The charge compensation device of reason.
The basic characteristics of super-junction metal oxide field effect transistor are that it is made of the region for being spaced N- and P- doping
Drift region is pressure-resistant to realize.Conventional high-tension MOS memory device is main when bearing high back voltage
It exhausts to realize by the longitudinal direction of PN junction pressure-resistant, is present with maximum field strength in the PN junction intersection of entire device.And superjunction
MOS memory due to introducing charge compensation mechanism, inside when exhausting pressure-resistant, electric field be distributed more
Uniformly, compared with the triangle peak electric field distribution of conventional high-tension MOS memory device, superjunction metal oxygen
Compound field-effect transistor internal electric field is distributed rectangular in the pressure-resistant direction in longitudinal direction.Its entire device is made to exhaust pressure-resistant process
In, do not occur respective electrical fields peak value.Since Vertical Square is inserted upwardly into p type island region, excessive current lead-through charge can be compensated.It is floating
It moves layer and adds reverse bias voltage, a transverse electric field will be generated, exhaust PN junction.When voltage reaches certain value, drift layer is complete
Fully- depleted will play the role of voltage support layer.Device can be made high in the pressure-resistant of vertical direction.However, device breakdown
Terminal is usually happened at, for traditional power device terminal, can be come in the drift layer of body silicon inner utilization low concentration
Ensure resistance to voltage levels, but due to the special active region structure of superjunction devices (also referred to as structure cell), the concentration of drift region compared with
Height, the thickness of drift layer is also smaller, and the terminal structure of common high voltage power device is not suitable for super-junction structure device, therefore, such as
The performance (such as pressure-resistant performance) what improves the terminal area of super-junction structure device becomes a major issue.
【The content of the invention】
One of purpose of the present invention is to provide a kind of super-junction metal oxide field effect in order to solve the above problem
Transistor.
A kind of super-junction metal oxide transistor is divided into active region and the resistance to pressure area positioned at active region periphery
Domain, the pressure-resistant region division is adjacent to the transitional region of the active region and positioned at the termination environment of transitional region periphery
Domain, the transistor further include N-type substrate, the N-type epitaxy layer in the N-type substrate, the N-type positioned at the resistance to intermediate pressure section
The p-type doping knot of epi-layer surface, the p-type of the connection in the N-type epitaxy layer of transitional region doping knot bottom and
The first P-doped zone, the N-type epitaxy layer positioned at the p-type doping side of forging of the terminal area extended towards the N-type substrate
In along parallel to the N-type substrate direction extension the second P-doped zone.
In one embodiment, the quantity of first P-doped zone is multiple, the multiple first P-doped zone
It is all connected with the p-type doping knot.
In one embodiment, the p-type ion concentration of the multiple first P-doped zone is along away from the active area
The direction in domain is gradually reduced.
In one embodiment, in the multiple first P-doped zone, the spacing of two neighboring first P-doped zone
Gradually increase along the direction away from the active region.
In one embodiment, the active region includes the 3rd P-doped zone, adjacent to the first of the active region
The p-type ion concentration of P-doped zone is more than the p-type ion concentration of the 3rd P-doped zone.
In one embodiment, the quantity of second P-doped zone is multiple, the multiple second P-doped zone
Extend along the direction parallel to the P type substrate, and the development length of the multiple second P-doped zone is along away from described
The direction of p-type doping knot is gradually reduced.
In one embodiment, longest second P-doped zone of development length in the multiple second P-doped zone
The concentration of p-type ion is less than the p-type of the first P-doped zone of the p-type ion concentration minimum in the multiple first P-doped zone
Ion concentration.
In one embodiment, the p-type ion concentration of the multiple second P-doped zone is equal, and the multiple
In two P-doped zones, the spacing of two the second P-doped zones of arbitrary neighborhood is equal.
In one embodiment, the p-type ion concentration of the multiple second P-doped zone is mixed along away from the p-type
The direction of miscellaneous knot continuously decreases, and in the multiple second P-doped zone, the spacing of two neighboring second P-doped zone along
Direction away from p-type doping knot gradually increases.
In one embodiment, the transistor further includes the heavy oxygen layer for being arranged at the p-type doping side of tying, described
Heavy oxygen layer extends to the neighbouring active area of the transitional region from the edge of the resistance to intermediate pressure section away from the active region
The one side edge close to the terminal area in the first P-doped zone domain in domain.
Compared to the prior art, super-junction metal oxide field effect transistor of the present invention, will be resistance on the basis of traditional structure
Intermediate pressure section is divided into two parts：Transitional region and resistance to intermediate pressure section, be respectively provided with longitudinal direction it is pressure-resistant and laterally it is pressure-resistant, specifically, transition
Region is longitudinal pressure-resistance structure, the transverse P-type column of terminal area, and N-type column is alternately arranged, and constitutes horizontal pressure-resistance structure, so as to
Improve the pressure-resistant performance of the super-junction metal oxide field effect transistor.
【Description of the drawings】
To describe the technical solutions in the embodiments of the present invention more clearly, used in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure, wherein：
Fig. 1 is the cross-section structure signal of the super-junction metal oxide field effect transistor of a better embodiment of the invention
Figure.
【Specific embodiment】
The technical solution in the embodiment of the present invention will be clearly and completely described below, it is clear that described implementation
Example is only the part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
All other embodiment that technical staff is obtained without making creative work belongs to the model that the present invention protects
It encloses.
Referring to Fig. 1, Fig. 1 is the section of the super-junction metal oxide field effect transistor of a better embodiment of the invention
Structure diagram.The super-junction metal oxide field effect transistor is divided into active region and positioned at the resistance to of active region periphery
Intermediate pressure section, transitional region of the pressure-resistant region division adjacent to the active region and the terminal positioned at transitional region periphery
Region, the transistor further include N-type substrate, the N-type epitaxy layer in the N-type substrate, the N positioned at the resistance to intermediate pressure section
The p-type doping knot of type epi-layer surface, the p-type doping knot bottom of the connection in the N-type epitaxy layer of the transitional region
And the first P-doped zone, the N-type extension positioned at the p-type doping side of forging of the terminal area extended towards the N-type substrate
In layer along the direction extension parallel to the N-type substrate the second P-doped zone, be arranged at the p-type and adulterate the side of tying
Heavy oxygen layer, positioned at the PXing Ti areas of the active region, polysilicon and the silicon oxide layer being stacked with the polysilicon.
Wherein, first P-doped zone, second P-doped zone and the 3rd P-doped zone can be P
Type highly doped regions.The p-type doping knot and the PXing Ti areas can be p-type low doped region.The p-type body surface may be used also
With with N-doped zone.
Further, in present embodiment, the quantity of first P-doped zone is multiple, and the multiple first p-type is mixed
Miscellaneous area is all connected with the p-type doping knot.The p-type ion concentration of the multiple first P-doped zone is along away from the active area
The direction in domain is gradually reduced.The spacing of two neighboring first P-doped zone gradually increases along the direction away from the active region.
The active region can include the 3rd P-doped zone, and the p-type ion of the first P-doped zone of the neighbouring active region is dense
Degree is more than the p-type ion concentration of the 3rd P-doped zone.
Further, the quantity of second P-doped zone is multiple that the multiple second P-doped zone is along flat
Row extends in the direction of the P type substrate, and the development length of the multiple second P-doped zone is mixed along away from the p-type
The direction of miscellaneous knot is gradually reduced.
In one embodiment, in the multiple second P-doped zone longest second P-doped zone of development length P
The concentration of type ion is less than the p-type of the first P-doped zone of the p-type ion concentration minimum in the multiple first P-doped zone
Ion concentration.
In one embodiment, the p-type ion concentration of the multiple second P-doped zone is equal, and the multiple 2nd P
In type doped region, the spacing of two the second P-doped zones of arbitrary neighborhood is equal.
In one embodiment, the p-type ion concentration of the multiple second P-doped zone is adulterated along away from the p-type
The direction of knot continuously decreases, and in the multiple second P-doped zone, and the spacing of two neighboring second P-doped zone is along remote
Direction from p-type doping knot gradually increases.
In addition, the heavy oxygen layer extends to the transitional region from the edge of the resistance to intermediate pressure section away from the active region
The neighbouring active region the first P-doped zone domain the one side edge close to the terminal area.
Super-junction metal oxide field effect transistor of the present invention is divided into two portions on the basis of traditional structure, by resistance to intermediate pressure section
Point：Transitional region and resistance to intermediate pressure section, are respectively provided with that longitudinal direction is pressure-resistant and laterally pressure-resistant, and specifically, transitional region is the pressure-resistant knot in longitudinal direction
Structure, the transverse P-type column of terminal area, N-type column are alternately arranged, and constitute horizontal pressure-resistance structure, so as to improve the superjunction metal
The pressure-resistant performance of oxide field-effect transistor.Meanwhile such structure has taken into account the manufacturing process of traditional superjunction devices, Ke Yitong
The mode crossed multiple extension and injected forms the pressure-resistant and horizontal pressure-resistance structure in the longitudinal direction, will not increase additional manufacture cost.
Specifically, for the transitional region, using the first P-doped zone being vertically arranged, the first p-type doping
The pressure-resistant demand of the visual device of number in area determines that pressure-resistant demand is higher, and the first P-doped zone number is more described in P.Optionally,
(left side is device active region domain direction to the concentration of the p-type ion of first P-doped zone, and right side is whole for device from left to right
End regions direction) it can continuously decrease.The p-type ion concentration of the first P-doped zone of the leftmost side is higher than in the domain of device active region
The concentration of three P-doped zones.Further, the spacing of the first P-doped zone can gradually increase from left to right in transitional region, more
Good mitigation longitudinal electric field reduces electric field strength in the body of terminal area.
For the terminal area, using the second transversely arranged P-doped zone, the second P-doped zone is grown from the top down
Degree gradually shortens, and the pressure-resistant demand of the second P-doped zone length visual organ part of the top determines that pressure-resistant demand is higher, the second p-type
Adulterating section length should be longer.Meanwhile the concentration of the p-type ion of the second P-doped zone of the top, it is most right to be less than transitional region
The p-type ion concentration of the first P-doped zone of side.Internal voltage point caused by preventing transitional region and terminal area concentration mismatch
Peak.Further, transversely arranged multiple the second P-doped zones of p-type column, the concentration of p-type ion can be consistent, if p-type
The concentration of ion is consistent, then the spacing of the second horizontal P-doped zone also must be consistent, prevents charge mismatch.Optionally, laterally
Multiple second P-doped zones of arrangement, the concentration of p-type ion can continuously decrease from up to down, then spacing is gradual from up to down
Increase.
In addition, knot covering is adulterated in entire terminal (including transitional region and terminal area) surface by p-type, substantially reduce
Surface leakage when device is reverse-biased, improves device performance.The p-type doping side of tying is provided with heavy oxygen layer, prevents extraneous electricity
Influence of the lotus to terminal end surface, at the same also can the influence of blocking device other technical process to terminal, improve the stability of terminal.
In addition, super-junction metal oxide field effect transistor using the above structure, the terminal of device can be substantially reduced
Size reduces device cost.Meanwhile terminal steady can be improved, it is pressure-resistant to promote device.
Above-described is only embodiments of the present invention, it should be noted here that for those of ordinary skill in the art
For, without departing from the concept of the premise of the invention, improvement can also be made, but these belong to the protection model of the present invention
It encloses.
Claims (10)
1. a kind of super-junction metal oxide transistor, it is characterised in that：The transistor is divided into active region and positioned at active
The resistance to intermediate pressure section of area periphery, the pressure-resistant region division is adjacent to the transitional region of the active region and positioned at the transition region
The overseas terminal area enclosed, the transistor further include N-type substrate, the N-type epitaxy layer in the N-type substrate, positioned at institute
State p-type doping knot, the P of the connection in the N-type epitaxy layer of the transitional region on the N-type epitaxy layer surface of resistance to intermediate pressure section
Type doping knot bottom and the first P-doped zone towards N-type substrate extension, the p-type doping knot positioned at the terminal area
The second P-doped zone along the direction extension parallel to the N-type substrate in the N-type epitaxy layer of lower section.
2. super-junction metal oxide transistor as described in claim 1, it is characterised in that：The number of first P-doped zone
It measures to be multiple, the multiple first P-doped zone is all connected with the p-type doping knot.
3. super-junction metal oxide transistor as claimed in claim 2, it is characterised in that：The multiple first P-doped zone
P-type ion concentration be gradually reduced along away from the direction of the active region.
4. super-junction metal oxide transistor as claimed in claim 2, it is characterised in that：The multiple first P-doped zone
In, the spacing of two neighboring first P-doped zone gradually increases along the direction away from the active region.
5. super-junction metal oxide transistor as claimed in claim 2, it is characterised in that：The active region includes the 3rd P
Type doped region, the p-type ion concentration of the first P-doped zone of the neighbouring active region are more than the P of the 3rd P-doped zone
Type ion concentration.
6. super-junction metal oxide transistor as claimed in claim 2, it is characterised in that：The number of second P-doped zone
It measures to be multiple, the multiple second P-doped zone extends along the direction parallel to the P type substrate, and the multiple 2nd P
The development length of type doped region is gradually reduced along the direction away from p-type doping knot.
7. super-junction metal oxide transistor as claimed in claim 6, it is characterised in that：The multiple second P-doped zone
The concentration of the p-type ion of middle longest second P-doped zone of development length is less than the p-type in the multiple first P-doped zone
The p-type ion concentration of first P-doped zone of ion concentration minimum.
8. super-junction metal oxide transistor as claimed in claim 6, it is characterised in that：The multiple second P-doped zone
P-type ion concentration it is equal, and in the multiple second P-doped zone, the spacing phase of two the second P-doped zones of arbitrary neighborhood
Deng.
9. super-junction metal oxide transistor as claimed in claim 6, it is characterised in that：The multiple second P-doped zone
P-type ion concentration continuously decreased along the direction away from p-type doping knot, and in the multiple second P-doped zone, phase
The spacing of adjacent two the second P-doped zones gradually increases along the direction away from p-type doping knot.
10. super-junction metal oxide transistor as described in claim 1, it is characterised in that：The transistor further includes setting
Heavy oxygen layer in the p-type doping side of tying, the heavy oxygen layer prolong from the edge of the resistance to intermediate pressure section away from the active region
Extend a side close to the terminal area in the first P-doped zone domain of the neighbouring active region of the transitional region
Edge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711328190.XA CN108110057B (en) | 2017-12-13 | 2017-12-13 | Super junction metal oxide field effect transistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711328190.XA CN108110057B (en) | 2017-12-13 | 2017-12-13 | Super junction metal oxide field effect transistor |
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| CN108110057A true CN108110057A (en) | 2018-06-01 |
| CN108110057B CN108110057B (en) | 2021-11-05 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687729A (en) * | 2021-03-17 | 2021-04-20 | 中芯集成电路制造(绍兴)有限公司 | Terminal structure of power device |
| CN113078206A (en) * | 2021-03-30 | 2021-07-06 | 电子科技大学 | Power semiconductor device |
| CN114050182A (en) * | 2022-01-17 | 2022-02-15 | 深圳市创芯微微电子有限公司 | Super junction power device and terminal structure and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002076017A (en) * | 2000-08-28 | 2002-03-15 | Fuji Electric Co Ltd | Semiconductor device |
| CN101510561A (en) * | 2009-03-30 | 2009-08-19 | 东南大学 | Ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube |
| CN104009072A (en) * | 2013-02-25 | 2014-08-27 | 中国科学院微电子研究所 | Insulated gate bipolar transistor and manufacturing method |
-
2017
- 2017-12-13 CN CN201711328190.XA patent/CN108110057B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002076017A (en) * | 2000-08-28 | 2002-03-15 | Fuji Electric Co Ltd | Semiconductor device |
| CN101510561A (en) * | 2009-03-30 | 2009-08-19 | 东南大学 | Ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube |
| CN104009072A (en) * | 2013-02-25 | 2014-08-27 | 中国科学院微电子研究所 | Insulated gate bipolar transistor and manufacturing method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687729A (en) * | 2021-03-17 | 2021-04-20 | 中芯集成电路制造(绍兴)有限公司 | Terminal structure of power device |
| CN113078206A (en) * | 2021-03-30 | 2021-07-06 | 电子科技大学 | Power semiconductor device |
| CN114050182A (en) * | 2022-01-17 | 2022-02-15 | 深圳市创芯微微电子有限公司 | Super junction power device and terminal structure and manufacturing method thereof |
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| CN108110057B (en) | 2021-11-05 |
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