CN108109790A - A kind of multi-electrode thermistor and preparation method thereof - Google Patents

A kind of multi-electrode thermistor and preparation method thereof Download PDF

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Publication number
CN108109790A
CN108109790A CN201711380980.2A CN201711380980A CN108109790A CN 108109790 A CN108109790 A CN 108109790A CN 201711380980 A CN201711380980 A CN 201711380980A CN 108109790 A CN108109790 A CN 108109790A
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CN
China
Prior art keywords
electrode
thermistor
substrate
electrode layer
resistance value
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Pending
Application number
CN201711380980.2A
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Chinese (zh)
Inventor
柏小海
段兆祥
叶建开
杨俊�
柏琪星
唐黎民
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Guangdong Aisheng Electronic Technology Co Ltd
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Guangdong Aisheng Electronic Technology Co Ltd
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Priority to CN201711380980.2A priority Critical patent/CN108109790A/en
Publication of CN108109790A publication Critical patent/CN108109790A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/003Apparatus or processes specially adapted for manufacturing resistors using lithography, e.g. photolithography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/30Apparatus or processes specially adapted for manufacturing resistors adapted for baking

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)

Abstract

A kind of multi-electrode thermistor, including thermistor chip, the upper and lower surface of the thermistor chip is respectively equipped with electrode layer, and the electrode layer of upper surface includes the electrode of multiple mutually insulateds, forms multi-electrode, the electrode layer of lower surface is a public electrode.The multi-electrode thermistor of the present invention can provide the resistance of different resistance values, using flexible, in use, the space occupied is smaller in intensive circuit on a single chip.

Description

A kind of multi-electrode thermistor and preparation method thereof
Technical field
The present invention relates to electronic component fields more particularly to a kind of thermistor and preparation method thereof.
Background technology
Thermistor of the prior art is single resistance value chip, needed in various lines using different resistance values when Wait limitation again.In addition, when needing the resistance using specific resistance value in intensive circuit, it may be necessary to multiple single resistance value chips Serial or parallel connection realizes that the space occupied is larger.
The content of the invention
Based on this, it is an object of the present invention to provide a kind of multi-electrode thermistors.
The technical solution adopted in the present invention is:
A kind of multi-electrode thermistor, including thermistor chip, the upper and lower surface of the thermistor chip is set respectively There is electrode layer, the electrode layer of upper surface includes the electrode of multiple mutually insulateds, forms multi-electrode, and the electrode layer of lower surface is One public electrode.
The multi-electrode thermistor of the present invention can provide the resistance of different resistance values, using flexible, close on a single chip In use, the space occupied is smaller in collection type circuit.
Further, the electrode layer is gold electrode layer, and the thermistor chip is NTC ceramic thermistor chip; The electrode layer of the upper surface includes at least three electrodes, the resistance value all same of the electrode of each upper surface or each upper surface Electrode resistance value is not exactly the same or the resistance value of the electrode of each upper surface differs.
Further, the electrode layer of the upper surface includes five electrodes, is respectively first electrode, second electrode, the 3rd Electrode, the 4th electrode, the 5th electrode, wherein second electrode and three-electrode surface accumulate identical, the 4th electrode and the 5th electrode area Identical, first electrode, second electrode and the area of the 3rd electrode, the 4th electrode and the 5th electrode are respectively three groups of different faces Product or first electrode, second electrode, the 3rd electrode, the 4th electrode, the size of the 5th electrode form arithmetic sequence.
The present invention also provides a kind of production methods of multi-electrode thermistor, comprise the following steps:
Step 1:Prepare thermistor substrate;
Step 2:It is printed and is sintered to form electrode layer in the upper and lower surface of thermistor substrate with metal paste, make it Upper surface forms the electrode of multiple mutually insulateds, and lower surface forms a public electrode;
Step 3:Thermistor substrate is divided to form multiple thermistor chips.
The production method of the multi-electrode thermistor of the present invention, design is reasonable, and cost is relatively low, is suitble to volume production.
Further, in step 2, printed with upper and lower surface of the metal paste in thermistor substrate, using setting The silk screen for having multi-electrode pattern prints upper surface, and lower surface is printed using the silk screen of electrodeless pattern, sintering, The upper surface of thermistor substrate is made to form multiple electrodes, the lower surface of thermistor substrate is made to form an electrode;
Alternatively, using the silk screen of electrodeless pattern, printed with upper and lower surface of the metal paste in thermistor substrate And be sintered, the upper and lower surface of thermistor substrate is made to form an electrode;To the electrode layer of the upper surface of thermistor substrate into Row etching, forms multiple electrodes.
Further, in step 2, the electrode layer of the upper surface forms five electrodes, is respectively first electrode, second Electrode, the 3rd electrode, the 4th electrode, the 5th electrode, wherein second electrode and three-electrode surface accumulate identical, the 4th electrode and the 5th Electrode area is identical, and the area of first electrode, second electrode and the 3rd electrode, the 4th electrode and the 5th electrode is three groups different Area or first electrode, second electrode, the 3rd electrode, the 4th electrode, the size of the 5th electrode form arithmetic sequence.
Further, in step 2, the electrode layer of the upper surface of thermistor substrate is etched, using laser Etching, to form multiple electrodes.
Further, in step 3, thermistor substrate cut using scribing machine to be formed multiple thermistor chips or Thermistor substrate separation is formed by multiple thermistor chips using etching mode.
Further, the thermistor substrate prepared in step 1 is NTC ceramic thermistor substrate;In step 2 The metal paste is gold paste, and the upper surface of the thermistor substrate forms at least three electrodes, the electrode of each upper surface Resistance value all same or each upper surface electrode the not exactly the same or each upper surface of resistance value electrode resistance value not It is identical.
Further, in step 2,5-10 μm of electrode layer is obtained with the silk-screen printing of 180-220 mesh, and at 830 DEG C -880 DEG C temperature in be sintered.
In order to better understand and implement, the invention will now be described in detail with reference to the accompanying drawings.
Description of the drawings
Fig. 1 is the structure diagram of the multi-electrode thermistor of the present invention;
Fig. 2 is the parallel circuit figure of the multi-electrode thermistor of the present invention;
Fig. 3 is the schematic diagram of the step 1 of the production method of the multi-electrode thermistor of the present invention;
Figure 4 and 5 are the schematic diagram of the step 2 of the production method of the multi-electrode thermistor of the present invention;
Fig. 6 is the schematic diagram of the step 3 of the production method of the multi-electrode thermistor of the present invention;
Fig. 7 is the schematic diagram of the step 4 of the production method of the multi-electrode thermistor of the present invention.
Specific embodiment
Referring to Fig. 1, the multi-electrode thermistor of the present invention, including NTC ceramic thermistor chip 1, the temperature-sensitive electricity The upper and lower surface of resistance chip is respectively equipped with gold electrode layer, and the electrode layer of upper surface includes the electrode of multiple mutually insulateds, is formed Multi-electrode 11, the electrode layer of lower surface is a public electrode 12.The number of electrodes of the upper surface can be two, this implementation At least three electrodes, preferably five in example are respectively first electrode, second electrode, the 3rd electrode, the 4th electrode, the 5th electrode.
In use, the public electrode of the electrode of any one upper surface and lower surface can be connected in circuit, specifically, Lower surface electrode is fixed to by patch form on circuit board, any one upper surface electrode is welded to circuit by lead On plate.The corresponding upper surface electrode each accessed is respectively formed a resistance with specific resistance value, as illustrated in the drawing R1, R2, R3, R4 and R5, the resistance value of each resistance is related to the size of upper surface electrode, and the area of each upper surface electrode can basis Institute's resistance size to be used is accordingly set, and be may be configured as similar resistance, be may be alternatively provided as different resistance values.Different resistance values When, can be not exactly the same resistance value, such as R1, R2 and R3, R4 and R5 are three groups of difference resistance values, R2 and R3 are same resistance Value, R4 and R5 are same resistance value, accordingly, the face of first electrode, second electrode and the 3rd electrode, the 4th electrode and the 5th electrode Product is that three groups of different areas, wherein second electrode and three-electrode surface product are identical, and the 4th electrode and the 5th electrode area are identical. Can also be complete different resistance value, such as R1-R5 is using arithmetic sequence resistance value, accordingly, first electrode, second electrode, 3rd electrode, the 4th electrode, the size of the 5th electrode form arithmetic sequence.Multiple upper surface electrodes can also be accessed electricity Multiple upper surface electrodes by lead are electrically connected and are welded on circuit board by Lu Zhong, effect be equivalent to by R1, R2, R3, Arbitrary several resistance in R4 and R5 carry out (referring to Fig. 2) in parallel, to obtain smaller resistance value or obtain beyond R1-R5 Resistance value is selected by the independent assortment of electrode, has more different resistance values available.
The present invention also provides the production methods of above-mentioned multi-electrode thermistor, comprise the following steps:
Step 1:Prepare NTC ceramic thermistor substrate (referring to Fig. 3);
Step 2:It is printed and is sintered to form electrode layer in the upper and lower surface of thermistor substrate with metal paste, make it Upper surface forms the electrode of multiple mutually insulateds, including first electrode, second electrode, the 3rd electrode, the 4th electrode and the 5th electricity Pole, lower surface form a public electrode.
It specifically can be there are two types of mode:First, being printed with upper and lower surface of the metal paste in thermistor substrate, adopt Upper surface is printed with the silk screen equipped with multi-electrode pattern, lower surface is printed using the silk screen of electrodeless pattern, Sintering makes the upper surface of thermistor substrate form multiple electrodes, and the lower surface of thermistor substrate is made to form an electrode.
Second is that using the silk screen of electrodeless pattern, printed with upper and lower surface of the metal paste in thermistor substrate And be sintered, the upper and lower surface of thermistor substrate is made to form an electrode (referring to Fig. 4);To the upper surface of thermistor substrate Electrode layer carry out laser-induced thermal etching, formed multiple electrodes (referring to Fig. 5).
The metal paste can be specifically gold paste or silver paste.Silk screen used in printing uses 180-220 mesh, preferably 200 mesh, print 5-10 μm of electrode layer is obtained after brush, and is sintered in 830 DEG C -880 DEG C of temperature, preferably 850 DEG C, sintering process makes in gold paste Glass dust penetrate into ceramic thermal resistance substrate, electrode layer is made firmly to be combined together with ceramic thermal resistance substrate.
Step 3:Thermistor substrate is divided to form multiple thermistor chips (referring to Fig. 6).
Specifically, scribing machine may be employed to cut thermistor substrate to form multiple thermistor chips or using erosion Quarter, thermistor substrate separation formed multiple thermistor chips by mode.
Step 4:Resistance value test is carried out to thermistor chip, undesirable product is eliminated and (refers to Fig. 7).
The multi-electrode thermistor of the present invention can provide the resistance of different resistance values, using flexible, close on a single chip In use, the space occupied is smaller in collection type circuit.The production method of the multi-electrode thermistor of the present invention, design is reasonable, into This is relatively low, is suitble to volume production.
In the description of the present invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " on ", " under ", The orientation or position relationship of the instructions such as "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom ", " interior ", " outer " are Based on orientation shown in the drawings or position relationship, it is for only for ease of the description present invention and simplifies description rather than instruction or dark Show that signified device or element there must be specific orientation, with specific azimuth configuration and operation, thus it is it is not intended that right The limitation of the present invention.In the description of the present invention, unless otherwise indicated, " multiple " are meant that two or more.
Embodiment described above only expresses the several embodiments of the present invention, and description is more specific and detailed, but simultaneously It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that come for those of ordinary skill in the art It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention Scope.

Claims (10)

1. a kind of multi-electrode thermistor, it is characterised in that:Including thermistor chip, the upper following table of the thermistor chip Face is respectively equipped with electrode layer, and the electrode layer of upper surface includes the electrode of multiple mutually insulateds, forms multi-electrode, lower surface Electrode layer is a public electrode.
2. multi-electrode thermistor according to claim 1, it is characterised in that:The electrode layer is gold electrode layer, described Thermistor chip is NTC ceramic thermistor chip;The electrode layer of the upper surface includes at least three electrodes, each upper table The electrode of the not exactly the same or each upper surface of resistance value of the electrode of the resistance value all same of the electrode in face or each upper surface Resistance value differs.
3. multi-electrode thermistor according to claim 1, it is characterised in that:The electrode layer of the upper surface includes five Electrode is respectively first electrode, second electrode, the 3rd electrode, the 4th electrode, the 5th electrode, wherein second electrode and the 3rd electricity Pole-face product it is identical, the 4th electrode and the 5th electrode area are identical, first electrode, second electrode and the 3rd electrode, the 4th electrode and The area of 5th electrode is respectively three groups of different area or first electrode, second electrode, the 3rd electrode, the 4th electrode, five The size of electrode forms arithmetic sequence.
4. a kind of production method of multi-electrode thermistor, it is characterised in that:Comprise the following steps:
Step 1:Prepare thermistor substrate;
Step 2:It is printed and is sintered to form electrode layer in the upper and lower surface of thermistor substrate with metal paste, make its upper table Face forms the electrode of multiple mutually insulateds, and lower surface forms a public electrode;
Step 3:Thermistor substrate is divided to form multiple thermistor chips.
5. the production method of multi-electrode thermistor according to claim 4, it is characterised in that:In step 2, metal is used Slurry is printed in the upper and lower surface of thermistor substrate, and upper surface is printed using the silk screen equipped with multi-electrode pattern Brush, prints lower surface using the silk screen of electrodeless pattern, is sintered, the upper surface of thermistor substrate is made to form multiple electricity Pole makes the lower surface of thermistor substrate form an electrode;
Alternatively, using the silk screen of electrodeless pattern, printed and burnt in the upper and lower surface of thermistor substrate with metal paste Knot makes the upper and lower surface of thermistor substrate form an electrode;The electrode layer of the upper surface of thermistor substrate is lost It carves, forms multiple electrodes.
6. the production method of multi-electrode thermistor according to claim 4, it is characterised in that:In step 2, on described The electrode layer on surface forms five electrodes, respectively first electrode, second electrode, the 3rd electrode, the 4th electrode, the 5th electrode, Wherein second electrode and three-electrode surface product it is identical, the 4th electrode and the 5th electrode area are identical, first electrode, second electrode and The area of 3rd electrode, the 4th electrode and the 5th electrode is three groups of different areas or first electrode, second electrode, the 3rd electricity Pole, the 4th electrode, the size of the 5th electrode form arithmetic sequence.
7. the production method of multi-electrode thermistor according to claim 5, it is characterised in that:In step 2, to temperature-sensitive electricity The electrode layer for hindering the upper surface of substrate is etched, using laser-induced thermal etching, to form multiple electrodes.
8. the production method of multi-electrode thermistor according to claim 4, it is characterised in that:In step 3, using scribing Machine cuts thermistor substrate to form multiple thermistor chips or form thermistor substrate separation using etching mode Multiple thermistor chips.
9. the production method of multi-electrode thermistor according to claim 4, it is characterised in that:The institute prepared in step 1 Thermistor substrate is stated as NTC ceramic thermistor substrate;The metal paste in step 2 is gold paste, the thermistor The upper surface of substrate forms the electrode of at least three electrodes, the resistance value all same of the electrode of each upper surface or each upper surface Resistance value is not exactly the same or the resistance value of the electrode of each upper surface differs.
10. the production method of multi-electrode thermistor according to claim 4, it is characterised in that:In step 2,180- is used 220 mesh silk-screen printings obtain 5-10 μm of electrode layer, and are sintered in 830 DEG C -880 DEG C of temperature.
CN201711380980.2A 2017-12-20 2017-12-20 A kind of multi-electrode thermistor and preparation method thereof Pending CN108109790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711380980.2A CN108109790A (en) 2017-12-20 2017-12-20 A kind of multi-electrode thermistor and preparation method thereof

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Application Number Priority Date Filing Date Title
CN201711380980.2A CN108109790A (en) 2017-12-20 2017-12-20 A kind of multi-electrode thermistor and preparation method thereof

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201829283U (en) * 2010-09-14 2011-05-11 马春海 High-precision thermistor chip
CN202796457U (en) * 2012-09-26 2013-03-13 广州天极电子科技有限公司 Multi-electrode type single-layer ceramic capacitor
CN103222015A (en) * 2010-11-22 2013-07-24 Tdk株式会社 Chip thermistor and thermistor assembly board
CN106205911A (en) * 2016-08-30 2016-12-07 广东爱晟电子科技有限公司 A kind of heat sensitive chip of anti-short circuit and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201829283U (en) * 2010-09-14 2011-05-11 马春海 High-precision thermistor chip
CN103222015A (en) * 2010-11-22 2013-07-24 Tdk株式会社 Chip thermistor and thermistor assembly board
CN202796457U (en) * 2012-09-26 2013-03-13 广州天极电子科技有限公司 Multi-electrode type single-layer ceramic capacitor
CN106205911A (en) * 2016-08-30 2016-12-07 广东爱晟电子科技有限公司 A kind of heat sensitive chip of anti-short circuit and preparation method thereof

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Application publication date: 20180601