CN108109663A - A kind of charge pump system and its implementation applied to low-power consumption - Google Patents
A kind of charge pump system and its implementation applied to low-power consumption Download PDFInfo
- Publication number
- CN108109663A CN108109663A CN201810029248.9A CN201810029248A CN108109663A CN 108109663 A CN108109663 A CN 108109663A CN 201810029248 A CN201810029248 A CN 201810029248A CN 108109663 A CN108109663 A CN 108109663A
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- voltage
- charge pump
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- hve
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
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- Read Only Memory (AREA)
- Dram (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a kind of charge pump system and its implementation applied to low-power consumption, the charge pump system includes：Low voltage charge pump, for generating the low pressure VD25 needed for storage operation；HVP sub-high pressure charge pumps, sub-high pressure when wiping and program for generating export HVP；HVE high voltage electricities pump, for generating High voltage output HVE during erasing；It climbs control circuit, for high pressure HVE outwards to be exported erasing voltage VEP by certain sequential；Delay circuit, for the control terminal that will be wiped output after the enabling signal delay adjustments time and export delay erasing enabling signal to the HVP sub-high pressures charge pump and input selection circuit；Input selection circuit, for selecting the input voltage that power vd D or sub-high pressure output HVP are pumped as the HVE high voltage electricities under the control of the delay erasing enabling signal, the present invention can reduce system peak power consumption.
Description
Technical field
The present invention relates to charge pumping technique field, more particularly to a kind of charge pump system applied to low-power consumption and in fact
Existing method.
Background technology
For super flash memory (Superflash), in order to cut NLDD (injection of N- lightly doped drains), (P- is lightly doped 2＆PLDD
Leakage injection) 2 masks (mask), the wordline WL chosen when being wiped (Erase) and being operated is 12V, and the wordline WL not chosen is
2.5V, when erasing voltage VEP (Vee) is more than certain voltage (such as 5V, generally 4~6V), the wordline WL not chosen will
It is charged to 2.5V.
Charge pump connection relation and working condition during prior art erasing (Erase) operation is as follows：Supply voltage VDD connects
The input terminal of HVP sub-high pressures charge pump 20 is connected to, the output HVP of HVP sub-high pressures charge pump 20 is connected to HVE high voltage electricities pump 30
Input terminal, the output HVE of HVE high voltage electricities pump 30 is connected to the input terminal of control circuit 40 of climbing, control circuit of climbing 40
Output VEP be to wipe high pressure Vee, supply voltage VDD is additionally coupled to the input terminal of VD25 low voltage charge pumps 10, VD25 low pressure
The output of charge pump 10, that is, low pressure VD25 (VDD is generally 1.2~1.5V, and VD25 is generally 2.5V, during relative coding/erasing
High voltage output 8.2/12V)；When erasing control signal is established, HVP sub-high pressures charge pump 20 and HVE high voltage electricities pump 30 start
Work, erasing voltage VEP (Vee) begins to ramp up, when erasing voltage VEP (Vee) be more than certain voltage (such as 5V, generally 4~
When 6V), low voltage charge pump 10 starts work and establishes low pressure VD25, the wordline WL not chosen is charged to 2.5V, the word do not chosen
HVP sub-high pressures charge pump 20 and HVE high voltage electricities pump 30 continue to improve erasing voltage VEP (Vee) extremely after the voltage stabilization of line WL
Given voltage such as 12V, when to the wordline WL not chosen, low voltage charge pump 10, HVP sub-high pressures charge pump 20 and HVE high-voltage electricity
Lotus pump 30 can work, and power consumption is bigger, can exceed design objective and limit (SPEC).
The content of the invention
To overcome above-mentioned the shortcomings of the prior art, the present invention's is designed to provide a kind of electricity applied to low-power consumption
Lotus pumping system and its implementation, so that any moment is all not in VD25 low voltage charge pumps, HVP sub-high pressures charge pump, HVE
The situation that high voltage electricity pump works at the same time, to reduce peak power.
In view of the above and other objects, the present invention proposes a kind of charge pump system applied to low-power consumption, including：
Low voltage charge pump, for generating the low pressure VD25 needed for storage operation；
HVP sub-high pressure charge pumps, sub-high pressure when wiping and program for generating export HVP；
HVE high voltage electricities pump, for generating High voltage output HVE during erasing；
It climbs control circuit, for high pressure HVE outwards to be exported erasing voltage VEP by certain sequential；
Delay circuit, for output and delay erasing enabling signal is defeated will to be wiped after the enabling signal delay adjustments time
Go out the control terminal to the HVP sub-high pressures charge pump and input selection circuit；
Input selection circuit, for selecting power vd D or sub-high pressure defeated under the control of the delay erasing enabling signal
Go out the input voltage that HVP is pumped as the HVE high voltage electricities.
Further, during programming, sub-high pressure output HVP is connected directly to selected unit, described time high during erasing
Pressure output HVP is connected to the input of the HVE high voltage electricities pump through the input selection circuit.
Further, supply voltage VDD is connected to the input terminal of the HVP sub-high pressures charge pump and input selection electricity
One input terminal on road, the sub-high pressure output HVP of the HVP sub-high pressures charge pump are connected to the another defeated of the input selection circuit
Enter end, the output of the input selection circuit is connected to the input terminal of the HVE high voltage electricities pump, the HVE high voltage electricities pump
High voltage output HVE be connected to the input terminal of the control circuit of climbing, the output VEP of the control circuit of climbing is to wipe
High pressure Vee, the supply voltage VDD are additionally coupled to the input terminal of the low voltage charge pump；The erasing enabling signal is connected to
The input terminal of the control terminal of the low voltage charge pump and the delay circuit, the output terminal of the delay circuit are connected to described
The control terminal of HVP sub-high pressures charge pump and the input selection circuit.
Further, after initialization is wiped, the low voltage charge pump starts work and establishes low pressure VD25；In described
After low pressure VD25 is established, the HVE high voltage electricities pump is started to work, and when erasing voltage VEP is more than certain voltage, is not selected
In wordline WL be charged to predeterminated voltage.
Further, during the wordline WL not chosen charges, the low voltage charge pump and HVE high voltage electricities pump are same
When work；The low voltage charge pump is stopped after the voltage stabilization for the wordline WL not chosen.
Further, after time-delay, delay circuit output delay erasing enabling signal is to HVP times described
High voltage electricity pumps and the control terminal of the input selection circuit, the HVP sub-high pressures charge pump startup work, while the input
The HVP sub-high pressures output of the HVP sub-high pressures charge pump is connected to the input terminal of the HVE high voltage electricities pump by selection circuit,
HVE high voltage electricities pump continues to improve erasing voltage VEP and starts erasing move to given voltage storage unit.
Further, during the HVP sub-high pressures output of the HVP sub-high pressures charge pump is connected to HVE high voltage electricities pump,
The HVP sub-high pressures charge pump and HVE high voltage electricities pump work at the same time and the low voltage charge pump does not work.
Further, when wiping control signal arrival, the charge pump system first carries out erasing initialization.
Further, the sub-high pressure output HVP is 7.5V~8.8V, and the High voltage output HVE is 11V~13V.
In order to achieve the above objectives, the present invention also provides a kind of implementation method of the charge pump system applied to low-power consumption, bags
Include following steps：
Step 1, after initialization is wiped, low voltage charge pump starts work and establishes low pressure VD25；
Step 2, after the low pressure VD25 is established, HVE high voltage electricities pump is started to work, when erasing voltage VEP surpasses
When crossing certain voltage, the wordline WL not chosen is charged to predeterminated voltage, described low after the voltage stabilization for the wordline WL not chosen
Pressure charge pump is stopped；
Step 3, after time-delay, delay circuit output delay erasing enabling signal to HVP sub-high pressures electricity
Lotus pumps and the control terminal of input selection circuit, the HVP sub-high pressures charge pump startup work, while the input selection circuit will
The HVP sub-high pressures output of the HVP sub-high pressures charge pump is connected to the input terminal of HVE high voltage electricities pump, the HVE high voltage electricities
Pump, which continues to improve erasing voltage VEP, starts erasing move to given voltage storage unit.
Compared with prior art, a kind of charge pump system and its implementation applied to low-power consumption of the invention, so that electric
Lotus pumping system any moment is all not in VD25 low voltage charge pumps, HVP sub-high pressures charge pump, HVE high voltage electricities pump work simultaneously
The situation of work, to reduce peak power.
Description of the drawings
Fig. 1 is the charge pump system schematic diagram of the prior art；
Fig. 2 is a kind of structure diagram of charge pump system for low-power consumption of the invention；
Fig. 3 is a kind of step flow chart of the implementation method of charge pump system for low-power consumption of the invention；
Fig. 4 is present invention emulation schematic diagram.
Specific embodiment
Below by way of specific specific example and embodiments of the present invention are described with reference to the drawings, those skilled in the art can
Understand the further advantage and effect of the present invention easily by content disclosed in the present specification.The present invention can also pass through other differences
Specific example implemented or applied, the various details in this specification also can be based on different viewpoints with application, without departing substantially from
Various modifications and change are carried out under the spirit of the present invention.
Fig. 2 is a kind of structure diagram of charge pump system for low-power consumption of the invention.As shown in Fig. 2, the present invention one
Kind pumps 30 including low voltage charge pump 10, HVP sub-high pressures charge pump 20, HVE high voltage electricities for the charge pump system of low-power consumption, climbs
Rise control circuit 40, delay circuit 50 and input selection circuit 60.
Wherein, low voltage charge pump 10, it is (general for generating low pressure VD25 needed for storage operation (read, program, erasing)
For 2.5V, 2~3V of scope)；HVP sub-high pressures charge pump 20, for generate erasing (Erase) and program (during programming, sub-high pressure is defeated
Go out HVP and be connected directly to selected unit, during erasing, sub-high pressure output HVP is connected to HVE high-voltage electricity through input selection circuit 60
The input of lotus pump 30) when sub-high pressure output HVP (generally 8.2V, 7.5~8.8V of scope) HVE high voltage electricities pump 30, be used for
Generate the High voltage output HVE (generally 12V, 11~13V of scope) during erasing (Erase)；Control circuit of climbing 40, for by height
Pressure HVE outwards exports (Ramp Up) erasing voltage VEP (Vee) by certain sequential；Delay circuit 50, for license letter will to be wiped
Number Erase delay adjustments times (being determined depending on specific design, 5~50uS of scope) output and delay erasing enabling signal is defeated afterwards
Go out the control terminal to HVP sub-high pressures charge pump 20 and input selection circuit 60；Input selection circuit 60, for being permitted in delay erasing
Power vd D or sub-high pressure is selected to export input voltages of the HVP as HVE high voltage electricities pump 30 under the control of signal.
Supply voltage VDD is connected to the input terminal of HVP sub-high pressures charge pump 20 and an input terminal of input selection circuit 60,
The sub-high pressure output HVP of HVP sub-high pressures charge pump 20 is connected to another input terminal of input selection circuit 60, input selection circuit
60 output is connected to the input terminal of HVE high voltage electricities pump 30, and the High voltage output HVE of HVE high voltage electricities pump 30, which is connected to, to climb
The input terminal of control circuit 40, the output VEP of control circuit of climbing 40 are to wipe high pressure Vee, and supply voltage VDD is additionally coupled to
The input terminal of VD25 low voltage charge pumps 10, VD25 low voltage charge pumps 10 output, that is, low pressure VD25 (VDD is generally 1.2~1.5V,
VD25 is generally 2.5V, High voltage output 8.2/12V during relative coding/erasing)；Erasing enabling signal Erase is connected to VD25
The control terminal of low voltage charge pump 10 and the input terminal of delay circuit 50, the output terminal of delay circuit 50 are connected to HVP sub-high pressures electricity
The control terminal of lotus pump 20 and input selection circuit 60.
When wiping control signal arrival, system carries out erasing initialization, after initialization is wiped, VD25 low tensions
Low pressure VD25 is established in the 10 startup work of lotus pump；After low pressure VD25 is established, HVE high voltage electricities pump 30 is started to work, and works as erasing
When voltage VEP (Vee) is more than certain voltage (such as 5V, generally 4~6V), the wordline WL that does not choose be charged to VD25 (2~
3V), during the wordline WL not chosen charges, low voltage charge pump 10 and HVE high voltage electricities pump 30 work at the same time；When what is do not chosen
(being charged to VD25,2~3V) after the voltage stabilization of wordline WL, VD25 low voltage charge pumps 10 are stopped；Again through time-delay
Afterwards, the output of delay circuit 50 delay erasing enabling signal is to HVP sub-high pressures charge pump 20 and the control terminal of input selection circuit 60,
HVP sub-high pressures charge pump 20 starts work, while input selection circuit 60 is defeated by the HVP sub-high pressures of HVP sub-high pressures charge pump 20
Go out to be connected to the input terminal of HVE high voltage electricities pump 30, HVE high voltage electricities pump 30 continues raising erasing voltage VEP (Vee) and extremely specifies
Voltage such as 12V, storage unit start erasing move, and HVE high is connected in the HVP sub-high pressures output of HVP sub-high pressures charge pump 20
During pressing charge pump 30, HVP sub-high pressures charge pump 20 and HVE high voltage electricities pump 30 work at the same time and VD25 low voltage charge pumps 10 not
Work.
Fig. 3 is a kind of step flow chart of the implementation method of charge pump system for low-power consumption of the invention.Such as Fig. 3 institutes
Show, a kind of implementation method of charge pump system for low-power consumption of the invention includes the following steps：
Step 301, when wiping control signal arrival, system carries out erasing initialization, low after initialization is wiped
Low pressure VD25 is established in the work of piezoelectricity lotus pump startup；
Step 302, after low pressure VD25 is established, HVE high voltage electricities pump is started to work, as erasing voltage VEP (Vee)
During more than certain voltage (such as 5V, generally 4~6V), the wordline WL not chosen is charged to VD25 (2~3V), what is do not chosen
During wordline WL charges, VD25 low voltage charge pumps and HVE high voltage electricities pump work at the same time；When the voltage for the wordline WL not chosen is steady
(being charged to VD25,2~3V) VD25 low voltage charge pumps are stopped after fixed；
Step 303, after time-delay, delay circuit output delay erasing enabling signal to HVP sub-high pressures electricity
Lotus pumps and the control terminal of input selection circuit, the work of HVP sub-high pressure charges pump startup, while input selection circuit is high by HVP times
The HVP sub-high pressures output of pressure charge pump is connected to the input terminal of HVE high voltage electricities pump, and HVE high voltage electricities pump continues to improve erasing
Voltage VEP (Vee) starts erasing move to given voltage such as 12V, storage unit, in the HVP sub-high pressures of HVP sub-high pressure charge pumps
During output is connected to HVE high voltage electricities pump, HVP sub-high pressures charge pump and HVE high voltage electricities pump work at the same time and low pressure charge
Air pump inoperative.
As it can be seen that in 4 stages that the present invention starts to terminate to erasing in erasing, there is not VD25 low voltage charge pumps 10, HVP
The situation that sub-high pressure charge pump 20 and HVE high voltage electricities pump 30 work at the same time, instantaneous peak value power consumption are effectively reduced, are suitble to low
Power consumption occasion uses.
Fig. 4 is the emulation schematic diagram of the present invention.Vvdd is supply voltage VDD, and vd25 exports for VD25 low voltage charge pumps 10,
Hvp is the output of HVP sub-high pressures charge pump 20, and hve is the output of HVE high voltage electricities pump 30, and vep is control circuit 40 of climbing
Output, wl [0], wl [1] are the voltage of selected word line, and wl [2], wl [50], wl [100], wl [272], wl [1000] are random
Several unselected word lines chosen, other are control signal needed for charge pump, same as the prior art.0 moment, initially
Change terminates, VD25 low voltage charge pumps 10 export VD25, a period of time (being illustrated as 40uS) afterwards HVE high voltage electricities pump 30 output
Hve is begun setting up, and reaches 4.47V, unselected word after the climb output vep of control circuit 40 of a period of time (being illustrated as 77uS)
Line wl [2], wl [50], wl [100], wl [272], wl [1000] etc. start to be electrically charged, and (are illustrated as approaching using a period of time
150uS), unselected word line wl [2], wl [50], wl [100], wl [272], wl [1000] etc. are charged to VD25 (due to circuit
Loss is actual for 2.07V or so), VD25 low voltage charge pumps 10 do not work and only keep exporting by the distribution capacity of circuit, HVP times
High voltage electricity pump 20 starts to work to establish required erasing voltage, and selected word line wl [0], wl [1] are constantly improve to after design load,
System control carries out erasing move.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.Any
Field technology personnel can modify above-described embodiment and changed under the spirit and scope without prejudice to the present invention.Therefore,
The scope of the present invention, should be as listed by claims.
Claims (10)
1. a kind of charge pump system applied to low-power consumption, including：
Low voltage charge pump, for generating the low pressure VD25 needed for storage operation；
HVP sub-high pressure charge pumps, sub-high pressure when wiping and program for generating export HVP；
HVE high voltage electricities pump, for generating High voltage output HVE during erasing；
It climbs control circuit, for high pressure HVE outwards to be exported erasing voltage VEP by certain sequential；
Delay circuit, for will wipe after the enabling signal delay adjustments time output and by delay erasing enabling signal export to
The control terminal of the HVP sub-high pressures charge pump and input selection circuit；
Input selection circuit, for selecting power vd D or sub-high pressure output HVP under the control of the delay erasing enabling signal
Input voltage as HVE high voltage electricities pump.
2. a kind of charge pump system applied to low-power consumption as described in claim 1, it is characterised in that：During programming, described time
High voltage output HVP is connected directly to selected unit, and during erasing, the sub-high pressure output HVP connects through the input selection circuit
It is connected to the input of the HVE high voltage electricities pump.
3. a kind of charge pump system applied to low-power consumption as described in claim 1, it is characterised in that：Supply voltage VDD connects
It is connected to the input terminal of the HVP sub-high pressures charge pump and an input terminal of the input selection circuit, the HVP sub-high pressures charge
The sub-high pressure output HVP of pump is connected to another input terminal of the input selection circuit, and the output of the input selection circuit connects
The input terminal of the HVE high voltage electricities pump is connected to, the High voltage output HVE of the HVE high voltage electricities pump is connected to the control of climbing
The input terminal of circuit processed, the output VEP of the control circuit of climbing is erasing high pressure Vee, and the supply voltage VDD is also connected with
To the input terminal of the low voltage charge pump；The erasing enabling signal is connected to the control terminal of the low voltage charge pump and described prolongs
When circuit input terminal, the output terminal of the delay circuit is connected to the HVP sub-high pressures charge pump and input selection electricity
The control terminal on road.
4. a kind of charge pump system applied to low-power consumption as described in claim 1, it is characterised in that：When erasing initialization knot
Shu Hou, the low voltage charge pump start work and establish low pressure VD25；After the low pressure VD25 is established, the HVE high pressures
Charge pump is started to work, and when erasing voltage VEP is more than certain voltage, the wordline WL not chosen is charged to predeterminated voltage.
5. a kind of charge pump system applied to low-power consumption as claimed in claim 4, it is characterised in that：In the wordline do not chosen
During WL charges, the low voltage charge pump and the HVE sub-high pressures charge pump work at the same time；When the voltage for the wordline WL not chosen
The low voltage charge pump is stopped after stabilization.
6. a kind of charge pump system applied to low-power consumption as claimed in claim 5, it is characterised in that：Through time-delay
Afterwards, delay circuit output delay erasing enabling signal is to the HVP sub-high pressures charge pump and the input selection circuit
Control terminal, HVP sub-high pressures charge pump startup work, while the input selection circuit are by the HVP sub-high pressures charge pump
The output of HVP sub-high pressures be connected to the input terminal of HVE high voltage electricities pump, the HVE high voltage electricities pump continues to improve erasing
Voltage VEP starts erasing move to given voltage storage unit.
7. a kind of charge pump system applied to low-power consumption as claimed in claim 6, it is characterised in that：It is high at described HVP times
During the HVP sub-high pressures output of pressure charge pump is connected to HVE high voltage electricities pump, the HVP sub-high pressures charge pump and the HVE high
Pressure charge pump works at the same time and the low voltage charge pump does not work.
8. a kind of charge pump system applied to low-power consumption as claimed in claim 7, it is characterised in that：When erasing control signal
During arrival, the charge pump system carries out erasing initialization first.
9. a kind of charge pump system applied to low-power consumption as described in claim 1, it is characterised in that：The sub-high pressure output
HVP is 7.5V~8.8V, and the High voltage output HVE is 11V~13V.
10. a kind of implementation method of charge pump system applied to low-power consumption, includes the following steps：
Step 1, after initialization is wiped, low voltage charge pump starts work and establishes low pressure VD25；
Step 2, after the low pressure VD25 is established, HVE high voltage electricities pump is started to work, when erasing voltage VEP is more than one
During constant voltage, the wordline WL not chosen is charged to predeterminated voltage, the low tension after voltage stabilization for the wordline WL not chosen
Lotus pump is stopped；
Step 3, after time-delay, delay circuit output delay erasing enabling signal to the HVP sub-high pressures charge pump
With the control terminal of input selection circuit, the HVP sub-high pressures charge pump startup works, while the input selection circuit is by described in
The HVP sub-high pressures output of HVP sub-high pressure charge pumps is connected to the input terminal of HVE high voltage electricities pump, HVE high voltage electricities pump after
It is continuous to improve erasing voltage VEP and start erasing move to storage unit after given voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810029248.9A CN108109663B (en) | 2018-01-12 | 2018-01-12 | Charge pump system applied to low power consumption and implementation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810029248.9A CN108109663B (en) | 2018-01-12 | 2018-01-12 | Charge pump system applied to low power consumption and implementation method thereof |
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| Publication Number | Publication Date |
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| CN108109663A true CN108109663A (en) | 2018-06-01 |
| CN108109663B CN108109663B (en) | 2020-07-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810029248.9A Active CN108109663B (en) | 2018-01-12 | 2018-01-12 | Charge pump system applied to low power consumption and implementation method thereof |
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| US20030151957A1 (en) * | 2002-02-11 | 2003-08-14 | Pekny Theodore T. | Dual bandgap voltage reference system and method for reducing current consumption during a standby mode of operation and for providing reference stability during an active mode of operation |
| US20080205134A1 (en) * | 2007-02-01 | 2008-08-28 | Kenta Kato | Charge pump to supply voltage bands |
| CN102237138A (en) * | 2010-04-30 | 2011-11-09 | 上海宏力半导体制造有限公司 | Voltage supply circuit |
| US20140159792A1 (en) * | 2012-12-11 | 2014-06-12 | SK Hynix Inc. | Voltage generation circuit |
| CN104022641A (en) * | 2014-06-05 | 2014-09-03 | 辉芒微电子（深圳）有限公司 | Charge pump circuit capable of preventing overshooting and being started fast and overshooting preventing and fast starting method thereof |
| CN104091613A (en) * | 2014-07-23 | 2014-10-08 | 上海华虹宏力半导体制造有限公司 | Charge pump system and memory |
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2018
- 2018-01-12 CN CN201810029248.9A patent/CN108109663B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030151957A1 (en) * | 2002-02-11 | 2003-08-14 | Pekny Theodore T. | Dual bandgap voltage reference system and method for reducing current consumption during a standby mode of operation and for providing reference stability during an active mode of operation |
| US20080205134A1 (en) * | 2007-02-01 | 2008-08-28 | Kenta Kato | Charge pump to supply voltage bands |
| CN102237138A (en) * | 2010-04-30 | 2011-11-09 | 上海宏力半导体制造有限公司 | Voltage supply circuit |
| US20140159792A1 (en) * | 2012-12-11 | 2014-06-12 | SK Hynix Inc. | Voltage generation circuit |
| CN104022641A (en) * | 2014-06-05 | 2014-09-03 | 辉芒微电子（深圳）有限公司 | Charge pump circuit capable of preventing overshooting and being started fast and overshooting preventing and fast starting method thereof |
| CN104091613A (en) * | 2014-07-23 | 2014-10-08 | 上海华虹宏力半导体制造有限公司 | Charge pump system and memory |
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| Publication number | Publication date |
|---|---|
| CN108109663B (en) | 2020-07-31 |
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