CN104362847A - Charge pump circuit allowing digital control of rise time and slope - Google Patents
Charge pump circuit allowing digital control of rise time and slope Download PDFInfo
- Publication number
- CN104362847A CN104362847A CN201410625614.9A CN201410625614A CN104362847A CN 104362847 A CN104362847 A CN 104362847A CN 201410625614 A CN201410625614 A CN 201410625614A CN 104362847 A CN104362847 A CN 104362847A
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- China
- Prior art keywords
- charge pump
- digital control
- variable resistor
- output
- connects
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/072—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps adapted to generate an output voltage whose value is lower than the input voltage
Abstract
The invention relates to the technical field of integrated circuit nonvolatile memories, in particular to a charge pump circuit allowing digital control of rise time and slope. The charge pump circuit is simple in circuit structure, allows precise control of rise time and slope and allows higher reliability. The charge pump circuit comprises a charge pump I1; the input end of the charge pump I1 is connected with the output end of an input clock CLK and the output end of a comparator I2; the output end of the charge pump is high-tension output VPP. The charge pump circuit is characterized by comprising a digital control circuit module, a resistor R2 and a variable resistor R1_i; the input end of the digital control module is connected with the input clock CLK; the output end of the digital control module controls on and off of the variable resistor R1_i; one end of the resistor R2 is connected with the output end of the charge pump I1; the other end of the resistor R2 is connected with the variable resistor R1_i prior to being grounded; one input end of the comparator I2 is connected with reference voltage VREF; the other input end of the comparator I2 is connected with the variable resistor R1_i.
Description
Technical field
The present invention relates to integrated circuit nonvolatile memory technology field, be specially the charge pump circuit of a kind of digital control rise time and slope.
Background technology
Nonvolatile memory to need by F-N tunnel effect or thermoelectronic effect by Charger transfer on floating boom or insulating barrier, and it is erasable that this process is commonly referred to high pressure, and the voltage of use is generally 12 volts to 18 volts.If it is too fast to rise in high pressure production process, often extra impact (Stress) is produced to the tunnel oxide film of memory cell or isolated oxide film, thus progressively cause damage.Such damage often makes the electric charge more fugacity in floating boom or insulating barrier, thus creates the problem of long-term reliability.For reducing the high pressure damage of Nonvolatile memery unit to increase the reliability index of memory as erasable number of times and data retention over time, need the output high pressure slope of the high pressure generator charge pump of memory built-in controlled, General Requirements is that tens microseconds are to microsecond up to a hundred.Traditional solution is generally simple charge and discharge control, or is compensated with change in voltage by oscillator frequency, the approximate control realizing the rate of rise, as shown in Figure 1, and the also useful input clock frequency partial-compensation rate of climb; Controlled by the method for other complicated analog circuits in addition in addition.The former to realize precision inadequate, can cause the decline of reliability index under some application conditions, the latter needs to design more accurately, circuit or rely on large to technique or need larger chip area.
Summary of the invention
In order to solve the problem, the invention provides the charge pump circuit of a kind of digital control rise time and slope, its circuit structure is simple, can realize accurately controlling rise time and slope, improves reliability.
Its technical scheme is such: the charge pump circuit of a kind of digital control rise time and slope, it comprises charge pump I1, the input of described charge pump I1 connects the output of input clock CLK and comparator I2, described electric charge delivery side of pump is High voltage output VPP, it is characterized in that, it also comprises digital control circuit module, resistance R2, variable resistor R1_i, the input of described digital control module connects input clock CLK, the switch that the output of described digital control module controls described variable resistor R1_i closes, described resistance R2 one end connects the output of described charge pump I1, ground connection after described resistance R2 other end connection variable resistor R1_i, an input of described comparator I2 connects reference voltage VREF, another input connects variable resistor R1_i.
It is further characterized in that, described variable resistor R1_i is by 2
nindividual resistance and 2
n-1 control switch composition;
Described digital control module comprises state machine, described state machine linkage counter, codec, output switch controller, described counter connects described input clock CLK, described output switch controller connects described variable resistor R1_i, the switching of the control switch that described counter makes described output switch controller control in described variable resistor R1_i by time delay changes the dividing ratios of described variable resistor R1_i, resistance R2, realizes the progressively rising of described High voltage output VPP.
After adopting circuit of the present invention, the high pressure that charge pump I1 produces compares through the dividing potential drop of resistance R2 and variable resistor R1_i and reference voltage VREF, circuit will be stabilized in VPP=VREF*(1+ R2/R1_i by negative feedback) on, utilize the control of digital control circuit module realization to the charge pump rise time, time can set at Microsecond grade wide region, determined by digital control module internal delay time, utilize the control of digital control module realization to the charge pump rate of rise, slope can set at volt piece Microsecond grade wide region, by dividing potential drop progression, dividing ratios, determine with digital circuit internal delay time, its circuit structure is simple, can realize accurately controlling rise time and slope, improve reliability.
Accompanying drawing explanation
Fig. 1 is prior art circuits schematic diagram;
Fig. 2 is circuit diagram of the present invention;
Fig. 3 is digital control circuit inside modules structural representation.
Embodiment
See Fig. 2, shown in Fig. 3, the charge pump circuit of a kind of digital control rise time and slope, it comprises charge pump I1, the input of charge pump I1 connects the output of input clock CLK and comparator I2, electric charge delivery side of pump is High voltage output VPP, it also comprises digital control circuit module, resistance R2, variable resistor R1_i, the input of digital control module connects input clock CLK, the output of digital control module controls the switching over of variable resistor R1_i, resistance R2 one end connects the output of charge pump I1, ground connection after resistance R2 other end connection variable resistor R1_i, an input of comparator I2 connects reference voltage VREF, another input connects variable resistor R1_i, variable resistor R1_i is by 2
nindividual resistance and 2
n-1 control switch composition, i=1 ~ 2
n, digital control module comprises state machine, state machine linkage counter, codec, output switch controller, counter connects input clock CLK, and output switch controller connects variable resistor R1_i, counter carries out timing to input clock CLK, produces the time delay of each switching state, codec, according to state machine output encoder and decoding, through the driving of output switch controller, controls the switching of the control switch in variable resistor R1_i.
Operation principle is as described below: charge pump I1 produces circuit and produces positive high voltage or negative high voltage output VPP by the Pump effect of input clock CLK in inside, without loss of generality, we illustrate operation principle with barotropic condition, namely only needing under negative pressure condition takes absolute value voltage is applicable to the principle of malleation, the high pressure that charge pump I1 produces compares through the dividing potential drop of resistance R2 and variable resistor R1_i and reference voltage VREF, if dividing point voltage is greater than reference voltage VREF, illustrate that charge pump I1 reaches target, comparator I2 exports and is closed by charge pump I1; When dividing point voltage is less than reference voltage VREF, charge pump I1 will start, and constantly increase High voltage output VPP and dividing point voltage is raised until dividing point voltage is greater than reference voltage VREF.Therefore circuit will be stabilized in VPP=VREF*(1+ R2/R1_i by negative feedback) on.
The divider resistance that resistance R2 and resistance-variable resistance R1_i forms is adjusted by digital control module classification, and during startup, divider resistance voltage ratio is less, and charge pump I1 exports target voltage and is set as lower thus; Time with digital control module internal control increases, and progressively raises divider resistance voltage ratio, and charge pump I1 exports target voltage progressively to be increased thereupon; Through the progression that can set, final charge pump exports and reaches ceiling voltage.Detailed process is adding of digital control module uphill process is changed into: first control closed control switch bottom under initial state, all the other control switchs are opened, the effective resistance of voltage ratio of R1_i is maximum is designated as R1_1, dividing potential drop is smaller, and the magnitude of voltage after charge pump I1 negative feedback reaches lower set point.Afterwards, digital control module, after the delay that can set, controls closed lower end second control switch, all the other control switchs are opened, the effective resistance of voltage ratio of variable resistor R1_i is reduced to R1_2, and voltage ratio raises, and the magnitude of voltage after charge pump I1 negative feedback reaches the set point after rising; By that analogy, by digital control module successively up Closed control switch one by one, the resistance of variable resistor R1_i is set by digital control module and constantly reduces R1_3, R1_4 ... until R1_2
n, voltage ratio continues to increase, and the magnitude of voltage after charge pump I1 negative feedback constantly increases, and achieves the control of rise time and slope.Utilize the control of digital control module realization to the charge pump I1 rise time, the time can set at Microsecond grade wide region, is determined by digital control module internal delay time.Digital control module adopts N bit to control, and can realize 2
nthe control of dimension accuracy.Utilize the control of digital control module realization to the charge pump I1 rate of rise, slope can set at volt piece Microsecond grade wide region, by dividing potential drop progression, dividing ratios, and digital circuit internal delay time determines, method is applicable to embedded or independent (Standalone) all kinds of nonvolatile storage, comprise Flash, EEPROM, MTP, OTP etc.
Claims (3)
1. the charge pump circuit of a digital control rise time and slope, it comprises charge pump I1, the input of described charge pump I1 connects the output of input clock CLK and comparator I2, described electric charge delivery side of pump is High voltage output VPP, it is characterized in that, it also comprises digital control circuit module, resistance R2, variable resistor R1_i, the input of described digital control module connects input clock CLK, the switch that the output of described digital control module controls described variable resistor R1_i closes, described resistance R2 one end connects the output of described charge pump I1, ground connection after described resistance R2 other end connection variable resistor R1_i, an input of described comparator I2 connects reference voltage VREF, another input connects variable resistor R1_i.
2. the charge pump circuit of a kind of digital control rise time according to claim 1 and slope, is characterized in that, described variable resistor R1_i is by 2
nindividual resistance and 2
n-1 control switch composition.
3. the charge pump circuit of a kind of digital control rise time according to claim 1 and slope, it is characterized in that, described digital control module comprises state machine, described state machine linkage counter, codec, output switch controller, described counter connects described input clock CLK, described output switch controller connects described variable resistor R1_i, described counter changes described variable resistor R1_i by the switching of the control switch that time delay makes described output switch controller control in described variable resistor R1_i, the dividing ratios of resistance R2, realize the progressively rising of described High voltage output VPP.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410625614.9A CN104362847A (en) | 2014-11-10 | 2014-11-10 | Charge pump circuit allowing digital control of rise time and slope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410625614.9A CN104362847A (en) | 2014-11-10 | 2014-11-10 | Charge pump circuit allowing digital control of rise time and slope |
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| CN104362847A true CN104362847A (en) | 2015-02-18 |
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| CN201410625614.9A Pending CN104362847A (en) | 2014-11-10 | 2014-11-10 | Charge pump circuit allowing digital control of rise time and slope |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505851A (en) * | 2015-09-07 | 2017-03-15 | 北京兆易创新科技股份有限公司 | A kind of voltage gear control circuit |
| CN108880231A (en) * | 2018-07-02 | 2018-11-23 | 华大半导体有限公司 | It is a kind of for adjusting the circuit of the output voltage of charge pump |
| CN109164863A (en) * | 2018-08-28 | 2019-01-08 | 上海华虹宏力半导体制造有限公司 | SONOS grid end controls voltage generation circuit |
| CN109842292A (en) * | 2017-11-24 | 2019-06-04 | 北京兆易创新科技股份有限公司 | A kind of charge pump circuit and NOR FLASH |
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| US20020093470A1 (en) * | 2001-01-12 | 2002-07-18 | Upd Corporation | Apparatus and method for driving surface discharge plasma display panel |
| US20070146052A1 (en) * | 2005-12-26 | 2007-06-28 | Dae-Seok Byeon | Charge pump |
| CN102543186A (en) * | 2010-12-20 | 2012-07-04 | 三星电子株式会社 | Negative voltage generator, decoder, nonvolatile memory device and memory system |
| CN103339677A (en) * | 2011-01-20 | 2013-10-02 | 美光科技公司 | Outputting a particular data quantization from memory |
| CN104364836A (en) * | 2012-05-31 | 2015-02-18 | 高通Mems科技公司 | System and method of sensing actuation and release voltages of interferometric modulators |
-
2014
- 2014-11-10 CN CN201410625614.9A patent/CN104362847A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020093470A1 (en) * | 2001-01-12 | 2002-07-18 | Upd Corporation | Apparatus and method for driving surface discharge plasma display panel |
| US20070146052A1 (en) * | 2005-12-26 | 2007-06-28 | Dae-Seok Byeon | Charge pump |
| CN102543186A (en) * | 2010-12-20 | 2012-07-04 | 三星电子株式会社 | Negative voltage generator, decoder, nonvolatile memory device and memory system |
| CN103339677A (en) * | 2011-01-20 | 2013-10-02 | 美光科技公司 | Outputting a particular data quantization from memory |
| CN104364836A (en) * | 2012-05-31 | 2015-02-18 | 高通Mems科技公司 | System and method of sensing actuation and release voltages of interferometric modulators |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505851A (en) * | 2015-09-07 | 2017-03-15 | 北京兆易创新科技股份有限公司 | A kind of voltage gear control circuit |
| CN106505851B (en) * | 2015-09-07 | 2019-03-22 | 北京兆易创新科技股份有限公司 | A kind of voltage gear control circuit |
| CN109842292A (en) * | 2017-11-24 | 2019-06-04 | 北京兆易创新科技股份有限公司 | A kind of charge pump circuit and NOR FLASH |
| CN108880231A (en) * | 2018-07-02 | 2018-11-23 | 华大半导体有限公司 | It is a kind of for adjusting the circuit of the output voltage of charge pump |
| CN109164863A (en) * | 2018-08-28 | 2019-01-08 | 上海华虹宏力半导体制造有限公司 | SONOS grid end controls voltage generation circuit |
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Application publication date: 20150218 |