CN104167223A - Method for realizing voltage stabilization of EEPROM (electrically erasable programmable read-only memory) and EEPROM device - Google Patents
Method for realizing voltage stabilization of EEPROM (electrically erasable programmable read-only memory) and EEPROM device Download PDFInfo
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- CN104167223A CN104167223A CN201410375045.7A CN201410375045A CN104167223A CN 104167223 A CN104167223 A CN 104167223A CN 201410375045 A CN201410375045 A CN 201410375045A CN 104167223 A CN104167223 A CN 104167223A
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Abstract
The invention discloses a method for realizing voltage stabilization of an EEPROM (electrically erasable programmable read-only memory) and an EEPROM device. The method comprises the following steps: on the basis of a voltage division circuit, acquiring partial voltage of a voltage stabilizing circuit on the EEPROM under a voltage stabilizing state; comparing the partial voltage under the voltage stabilizing state and reference voltage generated from a band-gap reference source through a comparator, starting a clock signal to trigger a charge pump to generate high voltage which is inputted to the end of the voltage stabilizing circuit if the partial voltage is less than the reference voltage; on the basis of the voltage division circuit, acquiring partial voltage of the voltage stabilizing circuit on the EEPROM under a booster state; stopping the clock signal from triggering the charge pump to generate high pressure when the comparator judges that the partial voltage in the voltage division circuit acquired under the booster state reaches a reference voltage. According to the embodiment of the invention, the booster input of the EEPROM device is realized through a charge pump; threshold value required by EPPROM tunneling is achieved, and the voltage of the EPPROM circuit is stabilized based on the voltage stabilizing circuit.
Description
Technical field
The present invention relates to RFID reader technology field, be specifically related to a kind of method and EEPROM device of EEPROM being realized to voltage stabilizing.
Background technology
Band EEPROM (Electrically Erasable Programmable Read Only Memo) (EEPROM, Electrically Erasable Programmable Read-Only Memory) be the storage chip that after a kind of power down, data are not lost, its can by higher than common voltage be used for wipe and reprogrammed.EEPROM need not take out and can revise from computing machine, in an EEPROM, when computing machine can be programmed when in use continually repeatedly, thus the life-span of EEPROM be that parameter is considered in a very important design.EEPROM is a kind of flash memory of special shape, and its voltage of applying in PC normally carrys out erasable and reprogrammed.
In rfid system, EEPROM is often used as storage key, configuration, data etc.The normal work of stablizing of EEPROM is also extremely important, otherwise can cause whole system collapse, makes mistakes.EEPROM adopts a kind of mechanism from electric charge to floating boom that inject or remove, is called tunneling effect.Adopt a kind of process to revise for this reason and be called the transistorized floating-gate device of FLOTOX (floating-gate tunnel oxide) as the device edited that can support electric erase process.It and FAMOS device are similar, but the thickness of that fraction insulating medium of isolation floating boom and raceway groove and drain terminal reduces to about 10nm or less.When the voltage of an about 10V (is equivalent to approximately 10
9while the electric field intensity of V/m) being added to this very thin insulation course, electronics is then worn mechanism by Fowler-Nordhelm and is penetrated or pass floating boom.EPPROM wears required threshold voltage then higher than the operating voltage of reader at present, such as wearing required threshold voltage then, existing EPPROM is generally set in 16V, and the operating voltage of reader is 5V, and the operating voltage of reader cannot reach EPPROM, then wear required threshold voltage, need to adopt certain means to make EPPROM there is stable threshold voltage.
Summary of the invention
For the operating voltage of existing reader, cannot realize EPPROM and then wear required threshold voltage, the present invention proposes a kind of method and EEPROM device of EEPROM being realized to voltage stabilizing, can realize the tunneling effect of EEPROM.
The invention provides a kind of method that EEPROM is realized to voltage stabilizing, described method comprises the steps:
Based on bleeder circuit, obtain the branch pressure voltage under voltage stabilizing state with the upper mu balanced circuit of EEPROM (Electrically Erasable Programmable Read Only Memo) EEPROM;
The size of the reference voltage producing by the more described branch pressure voltage of comparer and band gap reference, if when described branch pressure voltage is less than described reference voltage, opens clock signal and triggers charge pump generation high input voltage to mu balanced circuit end;
When comparer judges that branch pressure voltage under the pressure-increasning state obtaining in described bleeder circuit reaches described reference voltage, stop clock signal and trigger charge pump and produce high pressure.
Described bleeder circuit is dividing potential drop electric capacity or is divider resistance.
Described mu balanced circuit consists of electric capacity of voltage regulation.
Accordingly, the present invention also provides a kind of EEPROM device, comprising:
Bleeder circuit, for obtaining the branch pressure voltage with the upper mu balanced circuit of EEPROM (Electrically Erasable Programmable Read Only Memo) EEPROM;
Comparer, the size of the reference voltage producing for more described branch pressure voltage and band gap reference;
Clock control circuit, for according to the result of comparer feedback, when the branch pressure voltage under voltage stabilizing state is less than reference voltage, controls clock signal and opens charge pump generation high input voltage to mu balanced circuit; And when the branch pressure voltage under pressure-increasning state reaches reference voltage, control clock signal and stop charge pump generation high pressure;
Mu balanced circuit, for voltage stabilizing;
Band gap reference, for generation of reference voltage;
Charge pump, completes boosting to mu balanced circuit for being controlled by clock control circuit.
Described bleeder circuit is dividing potential drop electric capacity or is divider resistance.
Described mu balanced circuit consists of electric capacity of voltage regulation.
The present invention can realize the input of boosting in EEPROM device by charge pump, realizes EPPROM and then wears required threshold voltage, and based on mu balanced circuit, realize the voltage stabilizing of EPPROM circuit.Because the reference voltage that band-gap reference produces is smaller, adopted the mode of dividing potential drop to compare here.In the present invention, adopt electric resistance partial pressure, also can adopt capacitance partial pressure.Capacitance partial pressure can completely cut off the generation of DC current with respect to electric resistance partial pressure, reduces EEPROM element layout area.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 realizes the method flow diagram of voltage stabilizing to EEPROM in the embodiment of the present invention;
Fig. 2 is the EEPROM device architecture schematic diagram in the embodiment of the present invention;
Fig. 3 realizes the device principle figure of EEPROM voltage stabilizing based on electric capacity of voltage regulation and dividing potential drop electric capacity in the EEPROM device in the embodiment of the present invention;
Fig. 4 is the charge pump construction schematic diagram in the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making all other embodiment that obtain under creative work prerequisite, belong to the scope of protection of the invention.
Fig. 1 shows, in the embodiment of the present invention, EEPROM is realized to the method flow diagram of voltage stabilizing, comprises the steps:
S101, the branch pressure voltage based on the upper mu balanced circuit of bleeder circuit acquisition EEPROM under voltage stabilizing state;
Because the reference voltage that band-gap reference produces is less than 5V, needing first the voltage on mu balanced circuit to be carried out to dividing potential drop here could compare, and this branch pressure voltage is generally less than 5v, proportionally voltage division processing.
Bleeder circuit has a variety of, has electric resistance partial pressure, capacitance partial pressure etc.In the present embodiment, adopt capacitance partial pressure to be better than electric resistance partial pressure, while adopting electric resistance partial pressure, can arrive ground by generation current, need to consider power problems, such as being designed to the electric current of 1uA, all-in resistance needs 16M ohm, this resistance contrast EEPROM device is a very huge resistance, and shared element layout area also will be huger, adopt in an embodiment capacitance partial pressure, shared chip area is smaller, and electric capacity can completely cut off the generation of DC current.
The size of S102, the reference voltage that produces by the branch pressure voltage under comparer comparison voltage stabilizing state and band gap reference, if the branch pressure voltage under voltage stabilizing state is less than reference voltage, enters into S103, otherwise continues S102;
When if the described branch pressure voltage of S103 is less than reference voltage, opens clock signal and trigger charge pump generation high input voltage to mu balanced circuit end;
S104, the branch pressure voltage based on the upper mu balanced circuit of bleeder circuit acquisition EEPROM under pressure-increasning state;
The size of S105, the reference voltage that produces by the branch pressure voltage under comparer comparison pressure-increasning state and band gap reference;
If the branch pressure voltage under pressure-increasning state is less than reference voltage, continue the link of boosting, until reaching EPPROM, the voltage that mu balanced circuit end produces then wears required threshold voltage.In this process, charge pump is producing High Pressure always, and bleeder circuit is also playing a role always, and comparer is also carrying out epidemic situation comparison etc., the step of always circulate S104 and S105 always.When if the branch pressure voltage under pressure-increasning state reaches reference voltage, enter into S106.
S106, when comparer judges that branch pressure voltage under the pressure-increasning state obtaining in described bleeder circuit reaches described reference voltage, stop clock signal and trigger charge pump and produce high pressure.
It should be noted that, after EPPROM device is realized high voltage stabilizing, it in the whole course of work, in the comparison procedure in S101 and S102, if while existing power consumption penalty excessive, can trigger S103 step all the time under voltage stabilizing state.In whole voltage stabilizing process, general voltage of voltage regulation is to have reached EPPROM then to wear required threshold voltage, during lower than threshold voltage, can inspire charge pump charges to voltage of voltage regulation, the realization process of boosting, make the voltage of mu balanced circuit reach threshold voltage, thereby stop again, to mu balanced circuit power supply, making mu balanced circuit in voltage stabilizing state.
Fig. 2 shows the EEPROM device architecture schematic diagram in the embodiment of the present invention, and this EEPROM device includes:
Bleeder circuit, for obtaining the branch pressure voltage with the upper mu balanced circuit of EEPROM (Electrically Erasable Programmable Read Only Memo) EEPROM;
Comparer, the size of the reference voltage producing for more described branch pressure voltage and band gap reference;
Clock control circuit, for according to the result of comparer feedback, when the branch pressure voltage under voltage stabilizing state is less than reference voltage, controls clock signal and opens charge pump generation high input voltage to mu balanced circuit; And when the branch pressure voltage under pressure-increasning state reaches reference voltage, control clock signal and stop charge pump generation high pressure;
Mu balanced circuit, for voltage stabilizing;
Band gap reference, for generation of reference voltage;
Charge pump, completes boosting to mu balanced circuit for being controlled by clock control circuit.
It should be noted that, this bleeder circuit is dividing potential drop electric capacity or is divider resistance.It should be noted that, mu balanced circuit consists of electric capacity of voltage regulation.
It should be noted that, after EPPROM device is realized high voltage stabilizing, it in the whole course of work, if while existing power consumption penalty excessive, can trigger the process of boosting under voltage stabilizing state.In whole voltage stabilizing process, general voltage of voltage regulation is to have reached EPPROM then to wear required threshold voltage, during lower than threshold voltage, can inspire charge pump charges to voltage of voltage regulation, the realization process of boosting, make the voltage of mu balanced circuit reach threshold voltage, thereby stop again, to mu balanced circuit power supply, making mu balanced circuit in voltage stabilizing state.
Fig. 3 shows in the EEPROM device in the embodiment of the present invention device principle figure that realizes EEPROM voltage stabilizing based on electric capacity of voltage regulation and dividing potential drop electric capacity, by charge pump construction, produce high pressure, then high pressure is carried out to voltage division processing, separate the reference voltage comparison that a voltage and band-gap reference produce, if judge, voltage reaches or surpass threshold voltage 16V, close the clock signal that discharges and recharges that produces high-tension circuit, stop boosting; Due to the loss of EEPROM work, voltage can drag down again, if voltage, lower than 16V, reopens CLK, makes voltage dynamic stability at 16V, and a larger filtering capacitance of voltage regulation of this place's access, makes the few ripple of voltage stabilization simultaneously.
Fig. 4 shows the charge pump construction schematic diagram in the embodiment of the present invention, and when CLK is low level, NMOS pipe is opened, and PMOS pipe is closed, and by VIN_1, electric capacity is charged; After half clock period, CLK is high level, and NMOS pipe is closed simultaneously, and PMOS pipe is opened, now, if the abundant VOUT=VIN_1+VCLK of capacitor charge and discharge, thus reach the effect that voltage improves.This structure of many groups is received and has just been formed together generation high voltage electricity pump.Only have the effect of CLK, charge pump could be worked, if close CLK, just can not produce high pressure, and VOUT equals VIN_1 all the time.
The reference voltage that band-gap reference in the embodiment of the present invention produces is generally less than 5V, and needing first the high pressure in voltage of voltage regulation to be carried out to dividing potential drop could compare.Bleeder circuit has a variety of, has electric resistance partial pressure, and capacitance partial pressure etc. adopts capacitance partial pressure can be better than electric resistance partial pressure here.During electric resistance partial pressure, can arrive ground by generation current, suppose to be designed to the electric current of 1uA, all-in resistance must be 16M ohm, and this is a very huge resistance, and chip area is also very huge, yet replaces resistance with electric capacity, and electric capacity has completely cut off the generation of DC current.Voltage after capacitance partial pressure and reference voltage comparison, the output control CLK switch drawing, thus form effective high voltage control management.
To sum up, the present invention can realize the input of boosting in EEPROM device by charge pump, realizes EPPROM and then wears required threshold voltage, and based on mu balanced circuit, realize the voltage stabilizing of EPPROM circuit.Because the reference voltage that band-gap reference produces is smaller, adopted the mode of dividing potential drop to compare here.In the present invention, adopt electric resistance partial pressure, also can adopt capacitance partial pressure.Capacitance partial pressure can completely cut off the generation of DC current with respect to electric resistance partial pressure, reduces EEPROM element layout area.
One of ordinary skill in the art will appreciate that all or part of step in the whole bag of tricks of above-described embodiment is to come the hardware that instruction is relevant to complete by program, this program can be stored in a computer-readable recording medium, storage medium can comprise: ROM (read-only memory) (ROM, Read Only Memory), random access memory (RAM, Random Access Memory), disk or CD etc.
Method and the EEPROM device that EEPROM is realized to voltage stabilizing that above the embodiment of the present invention are provided are described in detail, applied specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment is just for helping to understand method of the present invention and core concept thereof; , for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention meanwhile.
Claims (6)
1. EEPROM is realized to a method for voltage stabilizing, it is characterized in that, described method comprises the steps:
Based on bleeder circuit, obtain the branch pressure voltage under voltage stabilizing state with the upper mu balanced circuit of EEPROM (Electrically Erasable Programmable Read Only Memo) EEPROM;
The size of the reference voltage producing by the relatively described branch pressure voltage under voltage stabilizing state of comparer and band gap reference, when if described branch pressure voltage is less than described reference voltage, opens clock signal and trigger charge pump generation high input voltage to mu balanced circuit end;
Based on bleeder circuit, obtain the branch pressure voltage of the upper mu balanced circuit of EEPROM under pressure-increasning state;
When comparer judges that branch pressure voltage under the pressure-increasning state obtaining in described bleeder circuit reaches described reference voltage, stop clock signal and trigger charge pump and produce high pressure.
2. the method that EEPROM is realized to voltage stabilizing as claimed in claim 1, is characterized in that, described bleeder circuit is dividing potential drop electric capacity or is divider resistance.
3. as described in claim 1 or 2, EEPROM is realized to the method for voltage stabilizing, it is characterized in that, described mu balanced circuit consists of electric capacity of voltage regulation.
4. an EEPROM device, is characterized in that, comprising:
Bleeder circuit, for obtaining the branch pressure voltage with the upper mu balanced circuit of EEPROM (Electrically Erasable Programmable Read Only Memo) EEPROM;
Comparer, the size of the reference voltage producing for more described branch pressure voltage and band gap reference;
Clock control circuit, for according to the result of comparer feedback, when the branch pressure voltage under voltage stabilizing state is less than reference voltage, controls clock signal and opens charge pump generation high input voltage to mu balanced circuit; And when the branch pressure voltage under pressure-increasning state reaches reference voltage, control clock signal and stop charge pump generation high pressure;
Mu balanced circuit, for voltage stabilizing;
Band gap reference, for generation of reference voltage;
Charge pump, completes boosting to mu balanced circuit for being controlled by clock control circuit.
5. EEPROM device as claimed in claim 4, is characterized in that, described bleeder circuit is dividing potential drop electric capacity or is divider resistance.
6. the EEPROM device as described in claim 4 or 5, is characterized in that, described mu balanced circuit consists of electric capacity of voltage regulation.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410375045.7A CN104167223A (en) | 2014-07-31 | 2014-07-31 | Method for realizing voltage stabilization of EEPROM (electrically erasable programmable read-only memory) and EEPROM device |
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| CN201410375045.7A CN104167223A (en) | 2014-07-31 | 2014-07-31 | Method for realizing voltage stabilization of EEPROM (electrically erasable programmable read-only memory) and EEPROM device |
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| CN107945832A (en) * | 2016-10-12 | 2018-04-20 | 力旺电子股份有限公司 | The control voltage method for searching of nonvolatile memory |
| US11482259B2 (en) | 2020-07-02 | 2022-10-25 | Winbond Electronics Corp. | Power down detection circuit and semiconductor memory device |
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| CN101501993A (en) * | 2006-08-09 | 2009-08-05 | 爱特梅尔公司 | Apparatus and method for charge pump slew rate control |
| CN103514951A (en) * | 2012-06-26 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | Voltage stabilizing circuit and voltage stabilizing device |
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| CN101501993A (en) * | 2006-08-09 | 2009-08-05 | 爱特梅尔公司 | Apparatus and method for charge pump slew rate control |
| CN101364118A (en) * | 2007-08-08 | 2009-02-11 | 海力士半导体有限公司 | Regulator and high voltage generator |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107945832A (en) * | 2016-10-12 | 2018-04-20 | 力旺电子股份有限公司 | The control voltage method for searching of nonvolatile memory |
| CN107945832B (en) * | 2016-10-12 | 2020-06-02 | 力旺电子股份有限公司 | Control voltage searching method of nonvolatile memory |
| US11482259B2 (en) | 2020-07-02 | 2022-10-25 | Winbond Electronics Corp. | Power down detection circuit and semiconductor memory device |
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Application publication date: 20141126 |