CN1627448A - Charge pump in use for circuit of non-volatility memory - Google Patents
Charge pump in use for circuit of non-volatility memory Download PDFInfo
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- CN1627448A CN1627448A CN 200310109229 CN200310109229A CN1627448A CN 1627448 A CN1627448 A CN 1627448A CN 200310109229 CN200310109229 CN 200310109229 CN 200310109229 A CN200310109229 A CN 200310109229A CN 1627448 A CN1627448 A CN 1627448A
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- charge pump
- mos transistor
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- 230000015556 catabolic process Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
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Abstract
This invention discloses a charge pump used in fixed memory circuit. A positive diode, a backward diode and a Mos transistor are serial connected to the output end of the charge pump after connected in series. Said Mos transistor is compared with the primary standard current source via an image structure, the compared output voltage is used in controlling the working voltage of the charge pump, which reduces the temp coefficient and power loss and the art work area of the charge pump.
Description
Technical field
The present invention relates to a kind of charge pump that is used for non-volatile memory circuit.
Background technology
Need to design the high pressure of built-in charge pump generation in EEPROM and the Flash eeprom circuit, be used to take place F-N or avalanche effect greater than 10V.For the quality requirements (10 year retention time, 100K erasing and writing life) that guarantees EEPROM need accurately be controlled the value of boosting of charge pump.
The charge pump output voltage control method has two kinds in the prior art, and the one, utilize diode reverse breakdown voltage control, the 2nd, utilize reference source multiplication of voltage FEEDBACK CONTROL.The former circuit structure is simple, but because breakdown reverse voltage has positive temperature coefficient, causes voltage to vary with temperature greatly when charge pump is operated in wide temperature range, thereby influenced the Control of Voltage precision.The The latter reference source circuit, control accuracy is better, but circuit area is increased.Adopt simple backward dioded to puncture the charge pump of form owing to there is not feedback arrangement in addition, power consumption is uncontrolled, and with supply voltage, variation of temperature is big, can not satisfy the requirement of low consumption circuit.
Summary of the invention
The technical matters that the present invention solves provides a kind of charge pump that is used for non-volatile memory circuit, can effectively reduce the temperature coefficient and the power consumption of charge pump, and the chip area of Charge Pump is dwindled, and reduces cost.
For solving the problems of the technologies described above, the present invention is used for the charge pump of non-volatile memory circuit, is serially connected in the electric charge delivery side of pump with a forward diode, backward dioded and after a MOS transistor is connected.Utilize the positive temperature coefficient (PTC) of diode reverse breakdown voltage, carry out temperature compensation in conjunction with the negative temperature coefficient of diode forward forward voltage and MOS transistor cut-in voltage.
Described MOS transistor compares by mirror-image structure and reference current source electric current, and relatively output voltage is used to control the operating voltage of charge pump.Utilize this negative feedback structure restriction breakdown current, thus the control power consumption.
The present invention can make the chip area of Charge Pump dwindle 50%, effectively reduces cost.
Description of drawings
Accompanying drawing is the charge pump construction figure that is used for non-volatile memory circuit.
Embodiment
As shown in the figure, the present invention is used for the charge pump of non-volatile memory circuit, comprise diode D1, D2, common MOS transistor MN1, described backward dioded D1, forward diode D2 be serially connected between electric charge delivery side of pump MOS transistor MN4 and the ground wire after MOS transistor MN1 connects.
At the big shortcoming of reverse breakdown temperature coefficient, the present invention adopts backward dioded D1, the series connection form of forward diode D2 and common MOS transistor MN1, the positive temperature coefficient (PTC) (diode D1:P diffusion layer → N trap) of utilizing diode D1 breakdown reverse voltage VB is carried out temperature compensation in conjunction with the negative temperature coefficient of diode D2 forward conduction voltage VF (diode D2:P diffusion layer → N trap) and MOS transistor MN1 cut-in voltage VT (N-channel MN1).Less and following approximation relation arranged when only considering the single order temperature coefficient at working current:
Vpp＝VD+VF+VT (1)
Actual design result, the single order temperature coefficient reaches the level of 100ppm.Thereby solved charge pump output voltage and varied with temperature big problem.Simultaneously owing to adopted the diode structure circuit area less, thereby reduced production cost.
Described MOS transistor MN1 compares by mirror-image structure and reference current source electric current by MOS transistor MP1, and relatively output voltage is used to control the operating voltage of charge pump.
At the bigger shortcoming of reverse breakdown formal charge pump circuit power consumption, the present invention adopts the mode of Current Feedback Control effectively to control power consumption.When the backward dioded D1 in the series circuit is not breakdown, no current flows through among the MOS transistor MN1, compare with the reference current by MOS transistor MP1, output voltage makes fully conducting of MOS transistor MN3 (Native NMOS), thereby the charge pump operating voltage is for the highest.D1 is reversed puncture along with diode, MOS transistor MN1 electric current progressively increases, mirror image MOS transistor MN2 and reference current source MOS transistor MP1 current ratio result weaken the conducting of MOS transistor MN3 pipe, the charge pump operating voltage is constantly reduced, reach setting value until MOS transistor MN1 tube current, charge pump enters steady state (SS), this moment MOS transistor MN1, MN2 electric current and charge pump operating voltage reach stationary value.Because the electric current that MOS transistor MN1 pipe flows through can be set at several uA by reference current source, so the power consumption of charge pump can be controlled lessly.Because the current source precision prescribed is relatively low, its chip area can be saved.If use the oscillatory circuit of current source form to provide clock as charge pump simultaneously, current source can be shared.
Claims (2)
1. charge pump that is used for non-volatile memory circuit is characterized in that: be serially connected in the electric charge delivery side of pump with a forward diode, backward dioded and after a MOS transistor is connected.
2. the charge pump that is used for non-volatile memory circuit as claimed in claim 1 is characterized in that: described MOS transistor compares by mirror-image structure and reference current source electric current, relatively the operating voltage of output voltage control charge pump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101092290A CN100353458C (en) | 2003-12-10 | 2003-12-10 | Charge pump in use for circuit of non-volatility memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101092290A CN100353458C (en) | 2003-12-10 | 2003-12-10 | Charge pump in use for circuit of non-volatility memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1627448A true CN1627448A (en) | 2005-06-15 |
| CN100353458C CN100353458C (en) | 2007-12-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101092290A Expired - Lifetime CN100353458C (en) | 2003-12-10 | 2003-12-10 | Charge pump in use for circuit of non-volatility memory |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100353458C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101017708B (en) * | 2006-02-07 | 2011-08-31 | 三星电子株式会社 | Semiconductor memory device controlling output voltage level of high voltage generator according to temperature variation |
| CN101635173B (en) * | 2008-07-21 | 2012-10-03 | 上海华虹Nec电子有限公司 | Method and circuit for self calibration of non-volatile memories, and non-volatile memory circuit |
| CN102891672A (en) * | 2012-09-25 | 2013-01-23 | 泰凌微电子（上海）有限公司 | Grid voltage bootstrapped switch with low on-resistance and substrate bias effect elimination method thereof |
| CN105700608A (en) * | 2016-04-21 | 2016-06-22 | 上海华力微电子有限公司 | Circuit for realizing various temperature coefficients of voltage output by charge pump |
| CN111474979A (en) * | 2019-01-23 | 2020-07-31 | 意法半导体国际有限公司 | Charge pump regulation circuit to increase program and erase efficiency in non-volatile memories |
| CN107085447B (en) * | 2016-02-16 | 2022-02-01 | 中芯国际集成电路制造(上海)有限公司 | Pump body structure for multi-time program memory and electronic device |
| US11258358B2 (en) | 2019-01-23 | 2022-02-22 | Stmicroelectronics International N.V. | Charge pump regulation circuit to increase program and erase efficiency in nonvolatile memory |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5841648A (en) * | 1997-05-29 | 1998-11-24 | Micro Motion, Inc. | Adjustable voltage converter utilizing a charge pump |
| DE19924568B4 (en) * | 1999-05-28 | 2014-05-22 | Qimonda Ag | charge pump |
| JP2002208290A (en) * | 2001-01-09 | 2002-07-26 | Mitsubishi Electric Corp | Charge pump circuit and operating method for non- volatile memory using it |
-
2003
- 2003-12-10 CN CNB2003101092290A patent/CN100353458C/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101017708B (en) * | 2006-02-07 | 2011-08-31 | 三星电子株式会社 | Semiconductor memory device controlling output voltage level of high voltage generator according to temperature variation |
| CN101635173B (en) * | 2008-07-21 | 2012-10-03 | 上海华虹Nec电子有限公司 | Method and circuit for self calibration of non-volatile memories, and non-volatile memory circuit |
| CN102891672A (en) * | 2012-09-25 | 2013-01-23 | 泰凌微电子（上海）有限公司 | Grid voltage bootstrapped switch with low on-resistance and substrate bias effect elimination method thereof |
| CN102891672B (en) * | 2012-09-25 | 2016-01-13 | 泰凌微电子（上海）有限公司 | There is boot-strapped switch and the body bias effect removing method thereof of low on-resistance |
| CN107085447B (en) * | 2016-02-16 | 2022-02-01 | 中芯国际集成电路制造(上海)有限公司 | Pump body structure for multi-time program memory and electronic device |
| CN105700608A (en) * | 2016-04-21 | 2016-06-22 | 上海华力微电子有限公司 | Circuit for realizing various temperature coefficients of voltage output by charge pump |
| CN111474979A (en) * | 2019-01-23 | 2020-07-31 | 意法半导体国际有限公司 | Charge pump regulation circuit to increase program and erase efficiency in non-volatile memories |
| US11070128B2 (en) | 2019-01-23 | 2021-07-20 | Stmicroelectronics International N.V. | Charge pump regulation circuit to increase program and erase efficiency in nonvolatile memory |
| US11258358B2 (en) | 2019-01-23 | 2022-02-22 | Stmicroelectronics International N.V. | Charge pump regulation circuit to increase program and erase efficiency in nonvolatile memory |
| CN111474979B (en) * | 2019-01-23 | 2022-04-08 | 意法半导体国际有限公司 | Charge pump regulation circuit to increase program and erase efficiency in non-volatile memories |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100353458C (en) | 2007-12-05 |
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Effective date of registration: 20171214 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: No. 1188, Chuan Qiao Road, Pudong, Shanghai Patentee before: Shanghai Hua Hong NEC Electronics Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
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Granted publication date: 20071205 |