CN108091660A - Image sensor - Google Patents

Image sensor Download PDF

Info

Publication number
CN108091660A
CN108091660A CN201611159737.3A CN201611159737A CN108091660A CN 108091660 A CN108091660 A CN 108091660A CN 201611159737 A CN201611159737 A CN 201611159737A CN 108091660 A CN108091660 A CN 108091660A
Authority
CN
China
Prior art keywords
image sensor
cambered surface
substrate
glue
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201611159737.3A
Other languages
Chinese (zh)
Other versions
CN108091660B (en
Inventor
杨省枢
张香鈜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industrial Technology Research Institute ITRI
Original Assignee
Industrial Technology Research Institute ITRI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Industrial Technology Research Institute ITRI filed Critical Industrial Technology Research Institute ITRI
Priority to CN201710886534.2A priority Critical patent/CN108110020B/en
Publication of CN108091660A publication Critical patent/CN108091660A/en
Application granted granted Critical
Publication of CN108091660B publication Critical patent/CN108091660B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

The invention discloses an image sensor, which comprises a substrate, an image sensing element and a glue layer. The substrate has a cambered surface. The image sensing element is arranged on the cambered surface, wherein the image sensing element bends along with the cambered surface. The adhesive layer is arranged on the cambered surface and covers the image sensing element.

Description

Image Sensor
Technical field
The present invention relates to a kind of Image Sensor, and more particularly to a kind of image sense for including bending Image Sensor Survey device.
Background technology
In recent years due to multimedia technology flourish, digitized video use is more frequent, consumer for image at The demand of reason device also increasingly increases.Many digital imagery products, such as network camera (web camera), digital camera (digital camera), Smartphone (smart phone) etc., be all by Image Sensor (image sensor) come Pick-up image.
For complementary metal oxide semiconductor Image Sensor (CMOS image sensing element), Bending can be designed to change its optical property, for reducing the quantity of required correspondence lens to reach image sensing The miniaturization of module.Typically, it is first not yet curved Image Sensor is placed in the cambered surface of substrate, the cambered surface of substrate Place has perforation to being located at Image Sensor, then through it is described perforate driven in a manner of being evacuated Image Sensor to It is lower bending and be attached at the cambered surface of substrate, so as to obtain curved Image Sensor.However, such mode must be first in substrate Formed for pumping perforation and cause manufacture craft it is more time-consuming, and substrate because form perforation due to make its structure more endless It is whole and Image Sensor can not be fixedly supported, Image Sensor may be caused to generate unexpected deformation at perforation. In addition, in general image sensing module, Image Sensor is not coated by colloid, therefore is easily had in the fabrication process different Object (dust in such as environment) is attached on Image Sensor and reduces the quality of image sensing module.
The content of the invention
It is an object of the invention to provide a kind of Image Sensor, can save manufacture cost, can make its Image Sensor It is firmly supported, and foreign matter can be avoided to be attached in the fabrication process on Image Sensor.
The Image Sensor of the present invention includes substrate, Image Sensor and glue-line.Substrate has cambered surface.Image sensing member Part is configured in cambered surface, and wherein Image Sensor is bent with cambered surface.Glue-line is configured in cambered surface and coats image sensing member Part.
Based on above-mentioned, in the Image Sensor of the present invention, except configuring Image Sensor in the cambered surface of substrate, also match somebody with somebody The glue-line of Image Sensor is put to coat.Therefore, it is pressure bonded to by Image Sensor and glue-line in the cambered surface of substrate During, Image Sensor can be made to be bent with cambered surface the pushing of Image Sensor by glue-line.Due to this hair It is bright as above non-to bend Image Sensor with air suction mode, therefore be not required to such as traditional manufacturing technique at the cambered surface of substrate The perforation for pumping is formed, and manufacture craft can be simplified to save manufacture cost.Further, since the substrate of the present invention is as above It is not required to form perforation, therefore the structure of substrate is more complete and can be fixedly supported Image Sensor.Furthermore by glue-line to shadow As the cladding of sensing element, foreign matter can be avoided to be attached in the fabrication process on Image Sensor.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and attached drawing appended by cooperation It is described in detail below.
Description of the drawings
Figure 1A is the sectional view of the Image Sensor of one embodiment of the invention;
Figure 1B is the partial component top view of the Image Sensor of Figure 1A;
Fig. 2 is the sectional view of the Image Sensor of another embodiment of the present invention;
Fig. 3 A are the sectional views of the Image Sensor of another embodiment of the present invention;
Fig. 3 B to Fig. 3 E are the manufacturing method flow charts of the Image Sensor of one embodiment of the invention;
Fig. 3 F are the variation diagrams of the environmental pressure of the manufacturing process of the Image Sensor of Fig. 3 A, pressure force and temperature;
Fig. 4 is the sectional view of the Image Sensor of another embodiment of the present invention;
Fig. 5 is the schematic diagram of the cover of another embodiment of the present invention, glue-line and Image Sensor.
Symbol description
100、200、300、400:Image Sensor
110、210、310、410:Substrate
110a、210a、310a、410a:Cambered surface
110b、210b、310b、410b:Dumping slot
120、220、320、420、520:Image Sensor
130、230、330、330’、430、530’:Glue-line
140、340、440、540:Cover
150、250、350:Conductive structure
152、252、352:Conducting wire
154、254、354、454:Conductive through hole
154a、254a、354a、156、256、356、456:Connection pad
160、260、360、460、560:Conducting element
A1、A2、A3:Line segment
D:Direction
E1、E2、E3、E4:End
H:Distance
h:Difference in height
R1、R2、R3、R4:Flange
S1:Upside
S2:Downside
T:Thickness
T1~t7:Time
Specific embodiment
Figure 1A is the sectional view of the Image Sensor of one embodiment of the invention.Please refer to Fig.1 A, the image sense of the present embodiment Surveying device 100 includes substrate 110, Image Sensor 120, glue-line 130 and cover 140.Substrate 110 has cambered surface 110a, image Sensing element 120 is configured on the cambered surface 110a of substrate 110 so that Image Sensor 120 is with the cambered surface 110a of substrate 110 And it bends.Glue-line 130 is configured on the cambered surface 110a of substrate 110 to coat Image Sensor 120.Cover 140 is configured at base To cover Image Sensor 120 and glue-line 130 on plate 110.In the present embodiment, Image Sensor 120 is, for example, complementation Formula metal-oxide semiconductor (MOS) Image Sensor (CMOS image sensing element), however the present invention not as Limit.
Specifically, the substrate 110 of the present embodiment has opposite upside S1 and downside S2, and cambered surface 110a is located at substrate 110 upside S1, and cambered surface 110a forms groove for cancave cambered surface on substrate 110 as shown in Figure 1A, Image Sensor 120 It is configured in the groove, glue-line 130 is filled in the groove, and the curvature of Image Sensor 120 is identical to cambered surface The curvature of 110a.In other embodiments, cambered surface 110a is alternatively convex globoidal and Image Sensor 120 is configured at the convex arc On face, the present invention is any limitation as not to this.
As described above, it is provided with to coat except configuring Image Sensor 120 on the cambered surface 110a of substrate 110 The glue-line 130 of Image Sensor 120.Therefore, Image Sensor 120 and glue-line 130 are being pressure bonded to the cambered surface of substrate 110 During 110a is upper, can Image Sensor 120 be made with arc to the pushing of Image Sensor 120 by glue-line 130 Face 110a is bent.Image Sensor 120 is bent with air suction mode since the present embodiment is as above non-, therefore is not required to as existing The perforation for supplying pumping is formed as manufacture craft at the cambered surface 110a of substrate 110, and manufacture craft can be simplified and be manufactured into saving This.It perforates further, since the substrate 110 of the present embodiment does not have as above at its cambered surface 110a, therefore the structure of substrate 110 More completely it can be fixedly supported Image Sensor 120.Furthermore by glue-line 130 to the bag of Image Sensor 120 It covers, foreign matter can be avoided to be attached in the fabrication process on Image Sensor 120.
Please refer to Fig.1 A, the maximum range H between the top surface of the Image Sensor 120 of the present embodiment and cover 140, example The such as less than thickness T of cover 140.For example, distance H is, for example, 12.5~100 microns, and thickness T is, for example, 200~1000 Micron.The top surface of Image Sensor 120 is greater than 12.5 microns in the difference in height h of the vertical direction of Figure 1A, so the present invention It is not limited thereto.
Figure 1B is the partial component top view of the Image Sensor of Figure 1A.To make attached drawing more clear, the glue-line in Figure 1A 130th, cover 140 and conducting element 160 are not illustrated in Figure 1B.A and Figure 1B is please referred to Fig.1, the substrate 110 of the present embodiment has extremely A few dumping slot 110b (being schematically shown as multiple), the periphery of dumping slot 110b from Image Sensor 120 extend to cambered surface 110a's Edge, so that the extra colloid generated in 130 forming process of glue-line can pass through dumping slot 110b and discharge.Specifically, this reality The multiple flange R1 having on the cambered surface 110a of example around Image Sensor 120 are applied, these flanges R1 compartment of terrain arranges and structure Into these dumping slots 110b.In addition, the end E1 of these flanges R1 forms location indentations around Image Sensor 120, make Image Sensor 120 is positioned at the location indentations that the end E1 of these flanges R1 is formed.
In the present embodiment, the outer margin contour of cambered surface 110a is as shown in Figure 1B rectangle, and the end E1 of these flanges R1 The location indentations formed are as shown in Figure 1B rectangle, and the right present invention is not limited.In other embodiments, cambered surface The outer margin contour of 110a can be circular or other suitable shapes, and the location indentations that the end E1 of these flanges R1 is formed Can be circular or other suitable shapes.In addition, in the present embodiment, cambered surface 110a for example only has radian in the directiond, so originally Invention is not limited, and in other embodiments, cambered surface 110a can also all have radian in other directions and form bowl-shape groove.
As illustrated in figures 1A and ib, Image Sensor 100 includes conductive structure 150, and conductive structure 150 is configured at substrate 110 and Image Sensor 120 is electrically connected to, and is extended to from the lower section of Image Sensor 120 outside cambered surface 110a, make image Sensing element 120 can penetrate conductive structure 150 and transfer signal.Specifically, it is conductive to include at least one for Image Sensor 100 Element 160 (is schematically shown as two), and conductive structure 150 includes an at least conducting wire 152 (being schematically shown as two), at least one conduction Through hole 154 (being schematically shown as two, be, for example, silicon perforation (TSV)) and an at least connection pad 156 (being schematically shown as two).Conducting element 160 It e.g. conductive bump and is configured between Image Sensor 120 and cambered surface 110a, two conducting elements 160 are being electrically connected shadow Two connection pads 156 as sensing element 120 and to be electrically connected conductive structure 150.Two connection pads 156 are configured on cambered surface 110a And two conducting wires 152 are connected respectively, two conducting wires 152 extend to arc along the upside S1 of substrate 110 out of cambered surface 110a Face 110a is outer and is respectively connected to two conductive through holes 154, and each conductive through hole 154 is located at the connection pad of the upside S1 of substrate 110 by it 154a connects corresponding conducting wire 152, and is through to the downside S2 of substrate 110 outside cambered surface 110a.In the present embodiment, Each conducting wire 152 of conductive structure 150 is, for example, to be extended to along dumping slot 110b outside cambered surface 110a, and so the present invention is not with this It is limited.
Fig. 2 is the sectional view of the Image Sensor of another embodiment of the present invention.In the embodiment shown in Figure 2, substrate 210th, cambered surface 210a, dumping slot 210b, Image Sensor 220, glue-line 230, conductive structure 250, conducting wire 252, conduction Through hole 254, connection pad 254a, connection pad 256, conducting element 260, flange R2, the configuration of end E2 and the mode of action are similar to Figure 1A Substrate 110, cambered surface 110a, dumping slot 110b, Image Sensor 120, glue-line 130, conductive structure 150, conducting wire 152nd, conductive through hole 154, connection pad 154a, connection pad 156, conducting element 160, flange R1, the configuration of end E1 and the mode of action, in This is repeated no more.The difference of Image Sensor 200 and Image Sensor 100 is in, Image Sensor 200 not as shown in Figure 1A It configures to cover the cover 140 of Image Sensor 120 and glue-line 130.
Fig. 3 A are the sectional views of the Image Sensor of another embodiment of the present invention.In the embodiment as shown in fig. 3 a, substrate 310th, cambered surface 310a, dumping slot 310b, Image Sensor 320, glue-line 330, cover 340, conductive structure 350, conducting wire 352nd, conductive through hole 354, connection pad 354a, connection pad 356, conducting element 360, flange R3, the configuration of end E3 and mode of action class It is similar to substrate 110, cambered surface 110a, dumping slot 110b, Image Sensor 120, glue-line 130, cover 140, the conductive knot of Figure 1A Structure 150, conducting wire 152, conductive through hole 154, connection pad 154a, connection pad 156, conducting element 160, flange R1, end E1 match somebody with somebody It puts and the mode of action, is repeated no more in this.Image Sensor 300 and the difference of Image Sensor 100 are in conducting element 360 be not that the conducting element 160 of Figure 1A such as is conductive bump, and conducting element 360 is anisotropic conductive adhesive paste (anisotropic Conductive film, ACF), with the characteristic by its anisotropy conduction two connection pads 356 is made not to be electrically connected to each other, and image sensing Device 300 is electrically connected to two connection pads 356 through the anisotropic conductive adhesive paste.
It by taking Image Sensor 300 shown in Fig. 3 A as an example, will illustrate the system of the Image Sensor of one embodiment of the invention below Make method.Fig. 3 B to Fig. 3 E are the manufacturing method flow charts of the Image Sensor of one embodiment of the invention.First, as shown in Figure 3B Substrate 310 is provided, substrate 310 has cambered surface 310a.Then, cover 340, glue-line 330 ' and image sensing are provided as shown in Figure 3 C Element 320, glue-line 330 ' are, for example, non-conductive film (non-conductive film, NCF), and the right present invention is not limited.So Afterwards, glue-line 330 ' is engaged between cover 340 and Image Sensor 320 as shown in Figure 3D.
Finally, as shown in FIGURE 3 E by the cover 340 being combined, glue-line 330 ' and Image Sensor 320 to being located at base Plate 310, and cover 340, glue-line 330 ' and Image Sensor 320 are pressed to substrate 310 and as state shown in Fig. 3 A, make shadow Picture sensing element 320 is bent by the pushing of glue-line 330 ' with the cambered surface 310a of substrate 310, and glue-line 330 is made to coat shadow As sensing element 320.In the process, bend Image Sensor 320 and the curvature of Image Sensor 320 is made to be identical to arc The curvature of face 310a, the location indentations that positioning Image Sensor 320 is formed in the end E3 of flange R3, makes Image Sensor 320 bottom surface is fully supported by cambered surface 310a, makes connecing for Image Sensor 320 and conductive structure by conducting element 360 Pad 356 is electrically connected to each other, and fills glue-line 330 in the groove of substrate 310, and is passed through cover 340 and covered Image Sensor 320 and glue-line 330.In addition, after pressing cover 340, glue-line 330 and Image Sensor 320 to substrate 310, it is also removable Except cover 340, the present invention is any limitation as not to this.Wherein, the glue-line not yet pressed of Fig. 3 C to Fig. 3 E is with 330 ' table of label Show, and Fig. 3 A are represented by the glue-line for pressing and being filled in the groove of substrate 310 with label 330.In the present embodiment, shadow As sensing element 320 material can include silicon, the thickness of Image Sensor 320 is, for example, less than 200 microns, and image sensing member Engagement (bonding) temperature of part 320 is, for example, 100~200 DEG C, and so the present invention is not limited thereto.
Fig. 3 F are the variation diagrams of the environmental pressure of the manufacturing process of the Image Sensor of Fig. 3 A, pressure force and temperature.Scheming In 3F, the longitudinal axis of line segment A1, A2, A3 represent environmental pressure, pressure force and temperature respectively, and transverse axis is the time.Please refer to Fig.3 F, More specifically, before cover 340, glue-line 330 and Image Sensor 320 are pressure bonded to substrate 310, first make in time t1 Operating environment becomes vacuum state.Then, cover 340, glue-line 330 ' and Image Sensor 320 start to contact base in time t2 Plate 310, and gradually increase pressure force.Time t3 start promoted temperature with heat glue-line 330 ' make its melt and be filled in substrate In 310 groove, and the glue-line 330 ' of fusing is made partly to be moved away from cambered surface 310a along dumping slot 310b.Start in time t4 into one Step promoted temperature with heat conducting element 360 (anisotropic conductive adhesive paste) make its melt and be electrically connected to Image Sensor 320 and Conductive structure 350.In time t5 start that operating environment is allowed to return back to non-vacuum by vacuum state.Start to reduce in time t6 Temperature with cool down the glue-line 330 of fusing make its solidify and coat Image Sensor 320.Time t7 stop apply pressure force and Complete the making of Image Sensor 300.
Fig. 4 is the sectional view of the Image Sensor of another embodiment of the present invention.In the embodiment shown in fig. 4, substrate 410th, cambered surface 410a, dumping slot 410b, Image Sensor 420, glue-line 430, cover 440, connection pad 456, conducting element 460, The configuration of flange R4, end E4 are similar to substrate 110, cambered surface 110a, dumping slot 110b, the image sensing of Figure 1A with the mode of action Element 120, glue-line 130, cover 140, connection pad 156, conducting element 160, flange R1, the configuration of end E1 and the mode of action, in This is repeated no more.The difference of Image Sensor 400 and Image Sensor 100 is in two conductive through holes 454 of conductive structure are straight Two connection pads 460 are connected in succession, and the downside of substrate 410 is through to out of cambered surface 410a, and the right present invention is not limited.
Fig. 5 is the cover, glue-line and Image Sensor of another embodiment of the present invention.Cover 540 shown in Fig. 5, glue-line 530th, the cover 340 of the configuration of Image Sensor 520 and conducting element 560 Fig. 3 D similar with the mode of action, glue-line 330, shadow Configuration and the mode of action as sensing element 320 and conducting element 360, repeat no more in this.Embodiment illustrated in fig. 5 and Fig. 3 D institutes Show that the difference of embodiment is in the glue-line 530 ' for being not yet pressure bonded to substrate has the protrusion for corresponding to Image Sensor 520 532, Image Sensor 520 more reliably is pressure bonded to substrate by protrusion 532.
In conclusion in the Image Sensor of the present invention, except configuring Image Sensor in the cambered surface of substrate, also match somebody with somebody The glue-line of Image Sensor is put to coat.Therefore, it is pressure bonded to by Image Sensor and glue-line in the cambered surface of substrate During, Image Sensor can be made to be bent with cambered surface the pushing of Image Sensor by glue-line.Due to this hair It is bright as above non-to bend Image Sensor with air suction mode, therefore be not required to such as traditional manufacturing technique at the cambered surface of substrate The perforation for pumping is formed, and manufacture craft can be simplified to save manufacture cost.Further, since the substrate of the present invention is as above It is not required to form perforation, therefore the structure of substrate is more complete and can be fixedly supported Image Sensor.Furthermore by glue-line to shadow As the cladding of sensing element, foreign matter can be avoided to be attached in the fabrication process on Image Sensor.
Although disclosing the present invention with reference to above example, the present invention, any affiliated technology are not limited to Skilled person in field without departing from the spirit and scope of the present invention, can make a little change and retouch, therefore of the invention Protection domain should be subject to what the claim enclosed was defined.

Claims (16)

1. a kind of Image Sensor, including:
Substrate has cambered surface;
Image Sensor is configured in the cambered surface, and wherein the Image Sensor is with cambered surface bending;And
Glue-line is configured in the cambered surface and coats the Image Sensor.
2. the curvature of Image Sensor as described in claim 1, the wherein Image Sensor is identical to the curvature of the cambered surface.
3. Image Sensor as described in claim 1, including cover, the wherein cover is configured on the substrate and covers the shadow As sensing element and the glue-line.
4. the maximum between the top surface of Image Sensor as claimed in claim 3, the wherein Image Sensor and the cover Distance is less than the thickness of the cover.
5. Image Sensor as described in claim 1, the wherein cambered surface form groove on the substrate for cancave cambered surface.
6. Image Sensor as claimed in claim 5, the wherein glue-line are filled in the groove.
7. Image Sensor as described in claim 1, the wherein substrate do not have perforation at the cambered surface.
8. Image Sensor as described in claim 1, the wherein substrate have an at least dumping slot, the dumping slot is from the image The periphery of sensing element extends to the edge of the cambered surface.
9. Image Sensor as claimed in claim 8, the wherein quantity of an at least dumping slot are multiple, have in the cambered surface Around multiple flanges of the Image Sensor, those flange compartment of terrain arrange and form those dumping slots.
10. the end of Image Sensor as claimed in claim 9, wherein those flanges is formed around the Image Sensor Location indentations, the Image Sensor are positioned at the location indentations.
11. Image Sensor as described in claim 1, including conductive structure, wherein the conductive structure be configured at the substrate and The Image Sensor is electrically connected to, and is extended to below the Image Sensor outside the cambered surface.
12. Image Sensor as claimed in claim 11, the wherein substrate have opposite upside and downside, which is located at The upside of the substrate, the conductive structure are through to the downside of the substrate out of this cambered surface or outside the cambered surface.
13. Image Sensor as claimed in claim 11, the wherein conductive structure include conductive through hole and conducting wire extremely It is one of few.
14. Image Sensor as claimed in claim 11, including an at least conducting element, the wherein conducting element is configured at this Between Image Sensor and the cambered surface, and it is electrically connected the Image Sensor and the conductive structure.
15. Image Sensor as claimed in claim 14, the wherein conducting element are conductive bump or anisotropic conductive adhesive paste.
16. Image Sensor as claimed in claim 8, including conductive structure, the wherein conductive structure extends along the dumping slot To outside the cambered surface.
CN201611159737.3A 2016-11-23 2016-12-15 Image sensor Active CN108091660B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710886534.2A CN108110020B (en) 2016-11-23 2016-12-15 Method for manufacturing image sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW105138514A TWI613915B (en) 2016-11-23 2016-11-23 Image sensor
TW105138514 2016-11-23

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201710886534.2A Division CN108110020B (en) 2016-11-23 2016-12-15 Method for manufacturing image sensor

Publications (2)

Publication Number Publication Date
CN108091660A true CN108091660A (en) 2018-05-29
CN108091660B CN108091660B (en) 2020-07-31

Family

ID=62016113

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201611159737.3A Active CN108091660B (en) 2016-11-23 2016-12-15 Image sensor
CN201710886534.2A Active CN108110020B (en) 2016-11-23 2016-12-15 Method for manufacturing image sensor

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201710886534.2A Active CN108110020B (en) 2016-11-23 2016-12-15 Method for manufacturing image sensor

Country Status (2)

Country Link
CN (2) CN108091660B (en)
TW (1) TWI613915B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI660493B (en) 2018-12-06 2019-05-21 財團法人工業技術研究院 Image sensor and manufacturing method thereof
CN109728165B (en) * 2019-01-04 2021-09-21 京东方科技集团股份有限公司 Display back plate, manufacturing method thereof and display device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010020671A1 (en) * 2000-02-04 2001-09-13 Fank Ansorge Focal surface and detector for opto-electronic imaging systems, manufacturing method and opto-electronic imaging system
JP2004297683A (en) * 2003-03-28 2004-10-21 Mitsubishi Electric Corp Solid-state imaging unit
JP2005045151A (en) * 2003-07-25 2005-02-17 Mitsubishi Electric Corp Image pickup device, manufacturing method thereof, and manufacturing apparatus thereof
US20070267661A1 (en) * 2006-05-17 2007-11-22 Sony Corporation Solid-state imaging apparatus
US20090115875A1 (en) * 2007-11-01 2009-05-07 Samsung Electronics Co., Ltd. Image sensor module and fabrication method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10109787A1 (en) * 2001-02-28 2002-10-02 Infineon Technologies Ag Digital camera with a light-sensitive sensor
JP2005260043A (en) * 2004-03-12 2005-09-22 Mitsubishi Electric Corp Curvedly mounted solid-state imaging element and its manufacturing method
US8742325B1 (en) * 2013-07-31 2014-06-03 Google Inc. Photodetector array on curved substrate
US9349763B1 (en) * 2015-02-10 2016-05-24 Omnivision Technologies, Inc. Curved image sensor systems and methods for manufacturing the same
US9998643B2 (en) * 2015-03-24 2018-06-12 Semiconductor Components Industries, Llc Methods of forming curved image sensors
CN205439290U (en) * 2016-02-26 2016-08-10 深圳市梦之坊通信产品有限公司 Combined material cell phone case's exhausted formula molding device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010020671A1 (en) * 2000-02-04 2001-09-13 Fank Ansorge Focal surface and detector for opto-electronic imaging systems, manufacturing method and opto-electronic imaging system
JP2004297683A (en) * 2003-03-28 2004-10-21 Mitsubishi Electric Corp Solid-state imaging unit
JP2005045151A (en) * 2003-07-25 2005-02-17 Mitsubishi Electric Corp Image pickup device, manufacturing method thereof, and manufacturing apparatus thereof
US20070267661A1 (en) * 2006-05-17 2007-11-22 Sony Corporation Solid-state imaging apparatus
US20090115875A1 (en) * 2007-11-01 2009-05-07 Samsung Electronics Co., Ltd. Image sensor module and fabrication method thereof

Also Published As

Publication number Publication date
TWI613915B (en) 2018-02-01
TW201820852A (en) 2018-06-01
CN108110020A (en) 2018-06-01
CN108091660B (en) 2020-07-31
CN108110020B (en) 2020-09-01

Similar Documents

Publication Publication Date Title
CN100561280C (en) Camera module and manufacture method thereof
US10032824B2 (en) Image sensor structure and packaging method thereof
WO2017157015A1 (en) Array camera module, moulded photosensitive assembly and manufacturing method therefor, and electronic device
CN111293128B (en) Image sensor and method for manufacturing the same
JP2013516656A (en) Camera module with molded tape flip chip imaging device mounting and manufacturing method
CN101159279A (en) Semiconductor image sensor die and production method thereof, semiconductor image sensor module, image sensor device, optical device element, and optical device module
CN101281281A (en) Camera module group and manufacturing method thereof
US10361235B2 (en) Image sensor
WO2021056961A1 (en) Image sensing module
EP3933697B1 (en) Biometric imaging module and method for manufacturing a biometric imaging module
CN108091660A (en) Image sensor
US20200034594A1 (en) Fingerprint sensor module comprising a fingerprint sensor device and a substrate connected to the sensor device
JP3388921B2 (en) Manufacturing method of integrated circuit card
TW201712384A (en) Camera module and method for fabricating the same
CN109754049A (en) The safety equipment of such as smart card
TWI555398B (en) Camera Module And Method For Fabricating The Same
TWI750523B (en) Optical image recognition device and manufacturing method thereof
US20170243047A1 (en) Fingerprint identification module and manufacturing method thereof
US20080303111A1 (en) Sensor package and method for fabricating the same
TW201820854A (en) Manufacturing method of image sensor
CN101335278A (en) Sensing type encapsulation piece and manufacturing method thereof
CN202405259U (en) Shooting module
CN108234833A (en) Electronic module and its manufacturing method
CN105609512A (en) Semiconductor device, solid-state imaging device and camera module
TW558840B (en) Image sensor of tape carrier package and method for manufacturing the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant