CN202405259U - Shooting module - Google Patents
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- CN202405259U CN202405259U CN2011204764961U CN201120476496U CN202405259U CN 202405259 U CN202405259 U CN 202405259U CN 2011204764961 U CN2011204764961 U CN 2011204764961U CN 201120476496 U CN201120476496 U CN 201120476496U CN 202405259 U CN202405259 U CN 202405259U
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Abstract
The utility model relates to a shooting module, comprising an image sensor and an optical lens arranged over one side of a photosensitive area of the image sensor, wherein, there is no solid light-transmission medium between the photosensitive area of the image sensor and the optical lens. According to the shooting module of the utility model, there is no solid light-transmission medium between the photosensitive area and the optical lens, thus there is no light loss after the light penetrates the optical lens, and the acquired image can not become worse due to scattering or refraction, thereby raising sensitivity of the image sensor. In addition, the shooting module does not use glass, thus the shooting module also has a low cost.
Description
Technical field
The utility model relates to semiconductor applications, more specifically, relates to a kind of shooting module.
Background technology
Imageing sensor grows up on the photoelectric technology basis, and so-called imageing sensor can be experienced optical image information exactly and convert thereof into the transducer of usable output signal.Imageing sensor can improve the visual range of human eye; The microcosmos and the macrocosm that make people see that naked eyes can't be seen; See that people temporarily can't arrival place occurrence; See the various physics, the chemical change process that exceed the naked eyes visual range, the incidence and development process of life, physiology, pathology, or the like.The visual picture transducer plays important effect in people's culture, physical culture, production, life and scientific research.We can say that modern humans's activity can't be left imageing sensor.
In practical application, imageing sensor is its function of experiencing optical image information and converting thereof into usable output signal of form performance of image taking sensor chip.In semiconductor production process, thereby form packaged imageing sensor to be used for multiple optical applications such as digital camera, DV or the like through the imageing sensor wafer being carried out a series of packaging technologies.Traditional packaging technology that the imageing sensor wafer is carried out generally comprises following steps: at first, encapsulation adhesives such as the AB glue through comprising epoxy resin is with the photosurface and the glassy phase bonding of imageing sensor wafer; Secondly, with the opposite face of the photosurface of imageing sensor wafer through carrying out attenuate such as grinding process; Once more, after said imageing sensor wafer attenuate, said imageing sensor wafer is carried out etching with the formation through hole, and, be electrically connected with the tin ball through the pad of copper after cooling wafer with injecting for example copper of molten metal in the through hole; At last, cut said imageing sensor wafer to obtain the separated images sensor chip.Thereby formed image sensor chip as shown in Figure 1.Illustrated packaged chip all can comprise a chip and a slice covers the glass on its photosurface, is preferably optical glass.
The utility model content
Therefore the task of the utility model is, proposes a kind of highly sensitive shooting module that has.
An aspect according to the utility model; A kind of shooting module has been proposed; Comprise the optical lens of imageing sensor and said imageing sensor photosensitive region one side top, wherein, do not have the solid light transmission medium between said imageing sensor photosensitive region and the said optical lens.Its advantage is, guaranteed not have between light is from the camera lens to the image sensor chip loss of light and because the image variation of being gathered that scattering causes, owing to do not need optical glass, cost also can correspondingly descend.
Description of drawings
Fig. 1 shows the sectional view according to the image sensor chip of traditional method for packing manufacturing;
Fig. 2 shows the flow chart according to the method for packing of the utility model;
Fig. 3 a-3k shows the schematic cross-section according to the method for packing of the image sensor chip of an embodiment of the utility model;
Fig. 4 a-4h shows the schematic cross-section according to the method for packing of the image sensor chip of another embodiment of the utility model;
Fig. 5 a-5g shows the schematic cross-section according to the method for packing of the image sensor chip of another embodiment of the utility model;
Fig. 6 a-6g shows the schematic cross-section according to the method for packing of the image sensor chip of another embodiment of the utility model;
Fig. 7 shows the shooting module according to an embodiment of the utility model.
Embodiment
Although following text has been set forth the detailed description of the various different execution modes of the utility model, be to be understood that the scope of law of the utility model is defined by the literal of the appended claim of this patent.It only is exemplary that detailed description should be interpreted as, and is not every kind of possible execution mode describing the utility model, because describe every kind of possible execution mode, even possible, also be unpractical.The technology of utilizing current techniques or researching and developing after day in present patent application can realize various interchangeable execution modes, and this will fall in the scope of the claim that defines the utility model.
Fig. 2 shows the flow chart according to the method for packing 20 of the utility model.With reference to Fig. 2, at first, the adhesive through variable viscosity in step S201 is bonding with the photosurface and the substrate of imageing sensor wafer, and wherein the adhesive of this variable viscosity can be UV photosensitive glue or PUR; Subsequently; In step S202, the pad of imageing sensor is connected to the welding material of said imageing sensor wafer rear; Such as the tin ball, wherein general commonly used connected mode has two kinds, promptly through mode that chip sides is gone between or the mode through through hole; Again, in step S203, the imageing sensor wafer that will pass through behind above-mentioned steps S201 and the S202 cuts to obtain the separated images sensor chip; At last in step S204; Peel off the operation of said substrate for the separated images sensor chip after the cutting; The viscosity of adhesive that promptly changes said variable viscosity is to peel off said substrate from said separated images sensor chip; Wherein, If what the adhesive of said variable viscosity adopted is UV photosensitive glue, so then the mode through the said image sensor chip of UV-irradiation change said variable viscosity the viscosity of adhesive so that said substrate is peeled off from said separated images sensor chip; If what the adhesive of said variable viscosity adopted is PUR, the viscosity of adhesive that so then changes said variable viscosity through the mode that heats said image sensor chip is to peel off said substrate from said separated images sensor chip.
Preferably, further comprising the steps of after said step S201 according to the method for the utility model in the flow chart of Fig. 2, promptly said imageing sensor wafer is carried out attenuate from the back side of said imageing sensor wafer.Through the step of attenuate, can be thinned to its minimum receptible thickness to the imageing sensor wafer as much as possible, thereby satisfy the miniaturization of semiconductor device and highly integrated requirement.
According to the specific embodiment of the utility model the method for packing according to the image sensor chip of the utility model is specifically described below.
Fig. 3 a-3k shows the schematic cross-section according to the method for packing of the image sensor chip of an embodiment of the utility model.
In the embodiment of the shown method of Fig. 3 a-3k, imageing sensor wafer 310 is provided, be formed with a plurality of imageing sensors in this imageing sensor wafer 310, also be formed with Cutting Road between these a plurality of imageing sensors, to isolate the pictures different transducer.Each imageing sensor has the photosensitive region that is used for sensitization, and it jointly is distributed in a side of imageing sensor wafer 310, and promptly photosurface 306.Normally; For each imageing sensor; It also comprises the signal processing circuit district; This signal processing circuit district is distributed in the periphery of each imageing sensor photosensitive region, and contiguous Cutting Road, and wherein other zones that are not used in sensitization of this Cutting Road, signal processing circuit district and photosurface 306 have constituted non-photosensitive region jointly.In practical application, also be formed with dielectric layer on the imageing sensor photosurface 306 and be positioned at interconnection layer (not shown) wherein, so that the circuit element that forms in this imageing sensor is drawn, wherein, this interconnection layer also comprises pad 307.
Then, substrate 301 is provided, this substrate 301 for example is rigid substrates such as glass plate, corrosion resistant plate, perhaps is flexible base, boards such as blue film, perhaps is the combination of flexible base, board and rigid substrates.The imageing sensor of this substrate 301 in should overlay image transducer wafer 310 is to avoid in encapsulation; Test; Contact such as dust, metallic particles and adhere to the photosensitive region of imageing sensor in the processes such as transportation, thus the photosensitive effect and the reliability of this imageing sensor influenced.
According to the method step of present embodiment, at first, at the adhesive 309 of substrate 301 coating variable viscosity for example on glass, for example UV photosensitive glue or PUR.For the adhesive 309 of this variable viscosity, it has the characteristic that viscosity after treatment changes.Based on this characteristic, be easy to handle by adhesive 309 two bonding faces of variable viscosity and separate through this.For example, for PUR, it has the significantly reduced characteristic of back viscosity of being heated.UV photosensitive glue then has and receives the characteristic that viscosity reduces behind the UV-irradiation.Be appreciated that the adhesive that variable viscosity schematically has been described with PUR or UV photosensitive glue in the present embodiment, but in practical application, the adhesive of this variable viscosity is not limited to this.Fig. 3 a shows and has been coated with the substrate 301 behind UV photosensitive glue or the PUR and has accomplished the imageing sensor wafer 310 of technology before the encapsulation, and the thickness of the adhesive 309 of this variable viscosity of coating is 2 microns to 100 microns.Preferably, can be through the adhesive 309 of spin coating mode or this variable viscosity of spraying method coating, so that the adhesive 309 of the variable viscosity that is coated with has uniformity preferably.
Subsequently; Adhesive 309 to the said variable viscosity that is coated with carries out partial etching; Make it only to keep the part of locating between each transducer corresponding to imageing sensor wafer 310; Be non-photosensitive region, and the adhesive 309 of the variable viscosity of imageing sensor photosensitive region is removed, shown in Fig. 3 b.
Subsequently, substrate 301 is adhered to the photosurface 306 of imageing sensor wafer 310, shown in Fig. 3 c.
Subsequently, selectively, can carry out attenuate, for example this imageing sensor wafer 310 is thinned to below 200 microns through back side grinding process to photosurface 306 opposing backside surface of said imageing sensor wafer 310.Then, etching is carried out until exposing interconnection layer, to form groove 311 at its back side in the subregion at imageing sensor wafer 310 back sides.Normally, the zone of institute's etching is the middle interconnecting piece branch of each imageing sensor in the imageing sensor wafer 310, and promptly Cutting Road is regional, so that pad 307 is wherein exposed, wherein, and the common slight inclination of cut surface, shown like Fig. 3 d.
Then, the backside deposition metal material of the imageing sensor wafer 310 in Fig. 3 c after the etching is to form metal level 312, and said metal level 312 also can cover the sidewall and the bottom of groove 311, shown in Fig. 3 e.Subsequently, this metal level 312 of partial etching is to form many conductive lead wires 304, and is shown like Fig. 3 f.This conductive lead wire 304 leads to each pad 307 of imageing sensor the presumptive area at imageing sensor wafer 310 back sides respectively, and this presumptive area is used for as the spot area that solder joint is set.
Subsequently, form welding material 303 in this spot area, tin ball for example is shown in Fig. 3 g.
Again, will pass through the imageing sensor wafer 310 after the above-mentioned steps and cut to obtain the separated images sensor chip, shown in Fig. 3 h.
At last; Peel off substrate 301 from each separated images sensor chip; The viscosity of adhesive 309 that promptly changes variable viscosity is to peel off substrate 301 from the separated images sensor chip; Wherein, if the adhesive of variable viscosity 309 adopts is UV photosensitive glue, so then the mode through the said image sensor chip of UV-irradiation reduce adhesive 309 viscosity so that substrate 301 is peeled off from the separated images sensor chip; If what adhesive 309 adopted is PUR; So then the mode through the heating image sensor chip reduce adhesive 309 viscosity so that substrate 301 is peeled off from the separated images sensor chip, be exactly to adopt in the above-mentioned dual mode any one to change the viscosity of the adhesive 309 of variable viscosity specifically; Make it to be in the state of to remove; The still image sensor chip applies a power that makes it to break away to substrate subsequently, such as the absorption affinity that is applied to its back (vacuum or static); Make it separately, separately the adhesive 309 of back variable viscosity is positioned at substrate 301 1 sides.Wherein, obtaining graphical sensory device chip after peeling off said substrate shown in Fig. 3 i like the shown separated images sensor chip of Fig. 3 h.In practical application, for PUR, the transition temperature of its viscosity-modifying can not surpass 260 degree usually; Can be greatly but need certain hour (after 10 minutes) viscosity to change, and in this temperature range, image sensor chip is heat-treated for example Reflow Soldering; The time that arrives 260 degree is very short; Usually have only tens seconds, thereby can't influence the device encapsulation structure (for example, conductive lead wire 304) that forms on it.And for UV photosensitive glue; This substrate 301 can constitute through the material of characteristic by having ultraviolet light usually; Optical glass for example, thereby be easy to make the UV-irradiation that this UV photosensitive glue is seen through through this substrate 301 of UV-irradiation, thereby make its viscosity reduce.
After peeling off said substrate, obtain after the graphical sensory device chip; Should this graphical sensory device chip be installed together through support 313 and camera lens 314 immediately; To avoid dust in air to adhere on the photosurface of imageing sensor; Shown in Fig. 3 j, and integrate with circuit board subsequently, show the sketch map that is installed together with camera lens and integrates with circuit board 315 like Fig. 3 k.
Fig. 4 a-4h shows the schematic cross-section according to the method for packing of the image sensor chip of another embodiment of the utility model.In this embodiment, imageing sensor wafer 410 is provided, is formed with a plurality of imageing sensors in this imageing sensor wafer 410, also be formed with Cutting Road between these a plurality of imageing sensors, to isolate the pictures different transducer.Each imageing sensor has the photosensitive region that is used for sensitization, and it jointly is distributed in a side of imageing sensor wafer 410, and promptly photosurface 406.
Method step according to present embodiment; At first; The adhesive 409 of the said variable viscosity of coating on the photosurface 406 of imageing sensor wafer 410, for example UV photosensitive glue or PUR, Fig. 4 a show imageing sensor wafer 410 and the substrate 401 that has been coated with behind UV photosensitive glue or the PUR;, the thickness of the adhesive 409 of this variable viscosity of coating is 2 microns to 100 microns.Preferably, can be through the adhesive 409 of spin coating mode or this variable viscosity of spraying method coating, so that the adhesive 409 of the variable viscosity that is coated with has uniformity preferably.
Subsequently, the adhesive 409 of the said variable viscosity that is coated with is carried out partial etching, make it only to keep the part of locating between each transducer corresponding to imageing sensor wafer 410, promptly non-photosensitive region is shown in Fig. 4 b.
Subsequently, substrate 401 is adhered to the photosurface 406 of imageing sensor wafer 410, shown in Fig. 4 c.This substrate 401 for example is rigid substrates such as glass plate, corrosion resistant plate, perhaps is flexible base, boards such as blue film, perhaps is the combination of flexible base, board and rigid substrates.The imageing sensor of this substrate 401 in should overlay image transducer wafer 410 is to avoid in encapsulation; Test; Contact such as dust, metallic particles and adhere to the photosensitive region of imageing sensor in the processes such as transportation, thus the photosensitive effect and the reliability of this imageing sensor influenced.
Subsequently, selectively, can carry out attenuate, for example this imageing sensor wafer 410 is thinned to below 200 microns through back side grinding process to the photosurface opposing backside surface of said imageing sensor wafer 410.Then, the mode through through hole is connected to the welding material 403 of said imageing sensor wafer rear with the pad of imageing sensor, specifically, is exactly to produce through hole from said imageing sensor wafer rear through etching, shown in Fig. 4 d.In through hole, fill metal material 408 then, for example copper makes a plurality of pads 407 be connected to the spot area at imageing sensor wafer 410 back sides respectively via this metal material 408, shown in Fig. 4 e.Then, form welding material 403 in this spot area, tin ball for example, thus make pad 407 be electrically connected to welding material 403, shown in Fig. 4 f.
Again, will pass through the imageing sensor wafer 410 after the above-mentioned steps and cut to obtain the separated images sensor chip, shown in Fig. 4 g.
At last; Peel off said substrate from each separated images sensor chip; The viscosity of adhesive that promptly changes said variable viscosity is to peel off said substrate from said separated images sensor chip; Wherein, if the adhesive of said variable viscosity adopts is UV photosensitive glue, so then the mode through the said image sensor chip of UV-irradiation change said variable viscosity the viscosity of adhesive so that said substrate is peeled off from said separated images sensor chip; If what the adhesive of said variable viscosity adopted is PUR; The viscosity of adhesive that so then changes said variable viscosity through the mode that heats said image sensor chip is to peel off said substrate from said separated images sensor chip; Wherein, obtaining graphical sensory device chip after peeling off said substrate shown in Fig. 4 h like the shown separated images sensor chip of Fig. 4 f.
Fig. 5 a-5g shows the schematic cross-section according to the method for packing of the image sensor chip of another embodiment of the utility model.In this embodiment, imageing sensor wafer 510 is provided, is formed with a plurality of imageing sensors in this imageing sensor wafer 510, also be formed with Cutting Road between these a plurality of imageing sensors, to isolate the pictures different transducer.Each imageing sensor has the photosensitive region that is used for sensitization, and it jointly is distributed in a side of imageing sensor wafer 510, and promptly photosurface 506.
At first; The adhesive 509 of the said variable viscosity of coating on said substrate 501; For example UV photosensitive glue or PUR; Fig. 5 a shows and has been coated with the substrate 501 behind UV photosensitive glue or the PUR and has accomplished the imageing sensor wafer 510 of technology before the encapsulation,, the thickness of the adhesive 509 of this variable viscosity of coating is 2 microns to 100 microns.Preferably, can be through the adhesive 509 of spin coating mode or this variable viscosity of spraying method coating, so that the adhesive 509 of the variable viscosity that is coated with has uniformity preferably.
Subsequently, coating encapsulation adhesives 520 on said substrate after being coated with the adhesive 509 of variable viscosity, this encapsulation adhesives can be the AB glue that comprises epoxy resin, shown in Fig. 5 b.
Subsequently, partial etching encapsulation adhesives 520 makes it only to keep the part of locating between each transducer corresponding to the imageing sensor wafer 521.In etching encapsulation adhesives 520, the adhesive 509 of the variable viscosity of correspondence position also can be etched away partially or completely, shown in Fig. 5 c.
Subsequently, substrate 501 is adhered to the photosurface 506 of imageing sensor wafer 510, wherein on the non-photosensitive region of part 521 through the partially-etched and encapsulation adhesives 520 that remains, shown in Fig. 5 d corresponding to said imageing sensor wafer 510.This substrate 501 for example is rigid substrates such as glass plate, corrosion resistant plate, perhaps is flexible base, boards such as blue film, perhaps is the combination of flexible base, board and rigid substrates.Imageing sensor in should overlay image transducer wafer 510 after the photosurface 506 of this substrate 501 and imageing sensor wafer 510 is bonding is to avoid in encapsulation; Test; Contact such as dust, metallic particles and adhere to the photosensitive region of imageing sensor in the processes such as transportation, thus the photosensitive effect and the reliability of this imageing sensor influenced.In addition; Because encapsulation adhesives 520 is isolated substrate 501 and imageing sensor wafer 510 relatively; Thereby make the photosensitive region of imageing sensor can not adhere to the adhesive of variable viscosity, and then avoided fully to remove the contamination of the photosensitive region that is brought at the variable adhesive of subsequent treatment medium viscosity.
Subsequently, selectively, can carry out attenuate, for example this imageing sensor wafer 510 is thinned to below 200 microns through back side grinding process to the photosurface opposing backside surface of said imageing sensor wafer 510.Then; The pad of imageing sensor is connected to the welding material 503 at said imageing sensor wafer 510 back sides through the mode of through hole; Specifically, be exactly to produce through hole from said imageing sensor wafer 510 back sides through etching, in through hole, fill metal material 508 then; For example copper makes a plurality of pads 507 lead to the spot area at imageing sensor wafer 510 back sides respectively via this metal material 508.Then, form welding material 503 in this spot area, tin ball for example is so that pad 507 is electrically connected with this welding material 503, shown in Fig. 5 e.
Again, will pass through the imageing sensor wafer 510 after the above-mentioned steps and cut to obtain the separated images sensor chip, shown in Fig. 5 f.
At last; Peel off the operation of said substrate for each separated images sensor chip; The viscosity of adhesive that promptly changes said variable viscosity is to peel off said substrate from said separated images sensor chip; Wherein, if the adhesive of said variable viscosity adopts is UV photosensitive glue, so then the mode through the said image sensor chip of UV-irradiation change said variable viscosity the viscosity of adhesive so that said substrate is peeled off from said separated images sensor chip; If what the adhesive of said variable viscosity adopted is PUR; The viscosity of adhesive that so then changes said variable viscosity through the mode that heats said image sensor chip is to peel off said substrate from said separated images sensor chip; Wherein, obtaining graphical sensory device chip after peeling off said substrate shown in Fig. 5 g like the shown separated images sensor chip of Fig. 5 f.
Fig. 6 a-6g shows the schematic cross-section according to the method for packing of the image sensor chip of another embodiment of the utility model.In this embodiment, imageing sensor wafer 610 is provided, is formed with a plurality of imageing sensors in this imageing sensor wafer 610, also be formed with Cutting Road between these a plurality of imageing sensors, to isolate the pictures different transducer.Each imageing sensor has the photosensitive region that is used for sensitization, and it jointly is distributed in a side of imageing sensor wafer 610, and promptly photosurface 606.
At first, the said encapsulation adhesives 620 of coating on the photosurface 606 of imageing sensor wafer 610, this encapsulation adhesives can be the AB glue that comprises epoxy resin, shown in Fig. 6 a.
Subsequently; Partial etching encapsulation adhesives 620; Make it only to keep the part of locating between each transducer corresponding to the imageing sensor wafer 621; Wherein on the non-photosensitive region of part 621 through the partially-etched and encapsulation adhesives 620 that remains, shown in Fig. 6 b corresponding to said imageing sensor wafer.
Subsequently; The adhesive 609 of the said variable viscosity of coating on said substrate 601; For example UV photosensitive glue or PUR; Fig. 6 c shows imageing sensor wafer 610 and the substrate 601 that has been coated with behind UV photosensitive glue or the PUR, and the thickness of the adhesive 609 of this variable viscosity of coating is 2 microns to 100 microns.Preferably, can be through the adhesive 609 of spin coating mode or this variable viscosity of spraying method coating, so that the adhesive 609 of the variable viscosity that is coated with has uniformity preferably.
Subsequently, with the photosurface 606 of 601 base plate bondings, shown in Fig. 6 d to imageing sensor wafer 610.This substrate 601 for example is rigid substrates such as glass plate, corrosion resistant plate, perhaps is flexible base, boards such as blue film, perhaps is the combination of flexible base, board and rigid substrates.Imageing sensor in should overlay image transducer wafer 610 after the photosurface 606 of this substrate 601 and imageing sensor wafer 610 is bonding is to avoid in encapsulation; Test; Contact such as dust, metallic particles and adhere to the photosensitive region of imageing sensor in the processes such as transportation, thus the photosensitive effect and the reliability of this imageing sensor influenced.
Subsequently, selectively, can carry out attenuate, for example this imageing sensor wafer 610 is thinned to below 200 microns through back side grinding process to the photosurface opposing backside surface of said imageing sensor wafer 610.Then, the mode through through hole is connected to the welding material 603 of said imageing sensor wafer rear with the pad of imageing sensor, specifically; Be exactly to produce through hole through etching, in through hole, fill metal material 608, for example copper then from said imageing sensor wafer rear; Make a plurality of pads 607 lead to the spot area at imageing sensor wafer 610 back sides respectively via this metal material 608; Then, form welding material 603, for example tin ball in this spot area; Thereby make pad 607 be electrically connected, shown in Fig. 6 e with welding material 603.
Again, will pass through the imageing sensor wafer 610 after the above-mentioned steps and cut to obtain the separated images sensor chip, shown in Fig. 6 f.
At last; Peel off said substrate from each separated images sensor chip; The viscosity of adhesive that promptly changes said variable viscosity is to peel off said substrate from said separated images sensor chip; Wherein, if the adhesive of said variable viscosity adopts is UV photosensitive glue, so then the mode through the said image sensor chip of UV-irradiation change said variable viscosity the viscosity of adhesive so that said substrate is peeled off from said separated images sensor chip; If what the adhesive of said variable viscosity adopted is PUR; The viscosity of adhesive that so then changes said variable viscosity through the mode that heats said image sensor chip is to peel off said substrate from said separated images sensor chip; Wherein, obtaining graphical sensory device chip after peeling off said substrate shown in Fig. 6 g like the shown separated images sensor chip of Fig. 6 f.
Fig. 7 shows the shooting module according to an embodiment of the utility model.This shooting module can adopt the method for packing in the previous embodiment to form.This shooting module comprises: the optical lens 706 of imageing sensor 701 and said imageing sensor 701 photosensitive regions 702 1 sides top.This optical lens 706 is connected on the imageing sensor 701 through support 703.Wherein, these imageing sensor 701 photosensitive regions 702 relative opposite sides have a plurality of solder joints 704, and this solder joint 704 makes the pad 705 of imageing sensor 701 draw.According to the difference of concrete application, can adopt side lead-in wire or through hole to be electrically connected this pad 705 and solder joint 704.Especially; There are not glass or other solid light transmission mediums between imageing sensor 701 photosensitive regions 702 and the optical lens 706; Thereby guaranteed that light does not have the loss of light 701 from optical lens 706 to imageing sensor and because the image variation that causes of scattering, thereby improved the sensitivity and the image quality of imageing sensor.In addition, also effectively reduce cost of manufacture.
Although in accompanying drawing and aforesaid description sets forth in detail with the utility model has been described, should think that this is illustrated and describes is illustrative and exemplary, rather than restrictive; The utility model is not limited to above-mentioned execution mode.
The those skilled in the art in those present technique fields can be through research specification, disclosed content and accompanying drawing and appending claims, and understanding and enforcement are to other changes of the execution mode of disclosure.In claim, word " comprises " element and the step of not getting rid of other, and wording " one ", " one " are not got rid of plural number.In the practical application of utility model, the function of a plurality of technical characterictics of being quoted during a part possibility enforcement of rights requires.Any Reference numeral in the claim should not be construed as the restriction to scope.
Claims (2)
- One kind the shooting module, comprise imageing sensor and said imageing sensor photosensitive region one side the top optical lens, wherein, do not have the solid light transmission medium between said imageing sensor photosensitive region and the said optical lens.
- 2. shooting module according to claim 1; It is characterized in that; Also comprise a plurality of solder joints, it is positioned at the said imageing sensor opposite side relative with said photosensitive region, and said a plurality of solder joints are connected to the pad of said imageing sensor respectively through side lead-in wire or through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204764961U CN202405259U (en) | 2011-11-25 | 2011-11-25 | Shooting module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204764961U CN202405259U (en) | 2011-11-25 | 2011-11-25 | Shooting module |
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| CN202405259U true CN202405259U (en) | 2012-08-29 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108417596A (en) * | 2018-04-12 | 2018-08-17 | 重庆港宇高科技开发有限公司 | Take the device and technique of sensor optical window |
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2011
- 2011-11-25 CN CN2011204764961U patent/CN202405259U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108417596A (en) * | 2018-04-12 | 2018-08-17 | 重庆港宇高科技开发有限公司 | Take the device and technique of sensor optical window |
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Granted publication date: 20120829 |