CN108089412A - Photoetching alignment precision measures the appraisal procedure of accuracy - Google Patents
Photoetching alignment precision measures the appraisal procedure of accuracy Download PDFInfo
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- CN108089412A CN108089412A CN201711102811.2A CN201711102811A CN108089412A CN 108089412 A CN108089412 A CN 108089412A CN 201711102811 A CN201711102811 A CN 201711102811A CN 108089412 A CN108089412 A CN 108089412A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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Abstract
The invention discloses the appraisal procedures that a kind of photoetching alignment precision measures accuracy, alignment precision offset based on board during photolithographic exposure does a series of matrix design experiment, and it is made comparisons according to the measurement of alignment precision method for measurement to be assessed with the alignment precision offset of default exposure, so as to obtain correlation results, the accuracy of alignment precision method for measurement is assessed according to whether correlation results are located at standard interval range.The present invention can accurately, simply, quickly evaluate the accuracy of photoetching alignment precision method for measurement.
Description
Technical field
The present invention relates to large scale integrated circuit photoetching process fields, are measured more particularly to a kind of photoetching alignment precision accurate
The appraisal procedure of true property.
Background technology
The development of semiconductor technology is often confined to the development of photoetching technique, and the diminution of characteristic size is to silicon chip alignment precision
Propose more strict requirements.If photoetching interlayer alignment precision is not reaching to the requirement of design criteria, leading portion device can be caused
The failure of part function and back segment line function directly contributes the loss of product yield.The alignment precision requirement and half of photoetching process
The technology node of semiconductor process is directly proportional, i.e., higher technology node requires more accurately alignment precision.Therefore for alignment essence
The assessment of degree also just seems increasingly important.
Industry in the alignment precision method for measurement that ion implanting lithography layer generally uses is handled based on picture signal at present
Alignment precision method for measurement (IBO), most general overlay mark is known as BIB (Box In Box or Bar In Bar), one
The Box (frame) or Bar (lines) of a outside are stayed when front layer lithography step, and the frame of the inside or lines are when layer light
Figure is exposed when carving step.By measuring front layer and when the offset at layer overlay mark center obtains corresponding alignment precision.
With the propulsion of advanced photoetching process, particularly double-pattern technology (DP) and fin formula field effect transistor (FinFET) are in photoetching
Application in technique, ion implanting lithography layer fabric has complicated three-dimensional structure, to photoetching alignment precision method for measurement
Stability and veracity propose more strict requirements.Therefore new photoetching alignment precision method for measurement also comes into being,
Such as based on the method for measurement of AIM (the advanced Image measurement methods of advanced image metrology) measurement mark and more first
Into based on diffracted signal processing alignment precision method for measurement.Judge that can a kind of new method for measurement really reflect wafer
Offset deviation is just particularly important for the assessment of these method for measurement.
In addition to alignment precision measurement mark, alignment precision has many measurement parameters that can adjust during actually measuring
Examination, such as alignment light source, the wavelength of measurement light source, the selection of polarization and metric data point of light source etc..These measurement parameters are all
Influence whether alignment precision measurement.Therefore it is also extremely important to the assessment of these measurement parameters.
In general, wafer can be utilized when the actual alignment precision of layer and front layer by designing suitable measurement aid mark
Layer real displacement deviation OV before and after figure after scanning electron microscope (SEM) measurement etchingCD-SEM=(WXL-WXR)/2,
In, OVCD-SEMFor the alignment precision value measured based on CD-SEM, WXLWork as the deviation of layer pattern and preceding layer pattern for left side,
WXRIt is the deviation that layer pattern and preceding layer pattern are worked as in right side, and in this, as the assessment benchmark of other alignment precision method for measurement, warp
It crosses relevance verification and measures accuracy.But since this measurement modes of CD-SEM (Critical Size Scanning Electron Microscopy) are to measuring
The requirement of mark is higher to be assessed, it is necessary to design a variety of CD-SEM measurement marks, increases light shield cost, and it is difficult to add assessment
Degree and assessment cycle.Wafer after assessing in this way simultaneously can not continue to do over again and assess again due to etched.Separately
Outside since this measurement modes of CD-SEM require front layer measurement mark that cannot be covered by some film layers, and there is film for some front layers
The lithography layer of layer covering will be no longer applicable in.It cuts into slices in addition, industry also has to wafer to be assessed, to obtain photoresist in substrate
Sectional view verify actual alignment precision.This being damaged to a certain extent property of slicing mode and be difficult obtain full wafer wafer on
Substantial amounts of data carry out assessment verification to alignment precision method for measurement.
The content of the invention
The technical problem to be solved in the present invention is to provide the appraisal procedures that a kind of photoetching alignment precision measures accuracy, can
Accurately, the accuracy of photoetching alignment precision method for measurement simply, is quickly evaluated.
In order to solve the above technical problems, the appraisal procedure that the photoetching alignment precision of the present invention measures accuracy is using as follows
What technical solution was realized, the alignment precision offset based on board during photolithographic exposure does a series of contrived experiment, and root
It makes comparisons according to the measurement of alignment precision method for measurement to be assessed with default exposure alignment precision offset, so as to obtain correlation
Property according to whether correlation results are located at standard interval range as a result, assess the accuracy of alignment precision method for measurement.
Photoetching alignment precision measures the appraisal procedure of accuracy, includes the following steps：
Step 1, design alignment precision measurement mark to be assessed, and is made and mask plate on；
Step 2, by photoetching, etching technics, front layer alignment figure is formed in front layer substrate；
Step 3, by given corresponding alignment precision offset matrix series, be exposed on wafer, layer is worked as in formation
Alignment figure；
Step 4 measures the photoetching alignment precision on full wafer wafer, acquisition amount using alignment precision method for measurement to be assessed
Survey result；
Alignment precision measurement to be assessed simulation is calculated corresponding alignment precision offset by step 5, and with giving
Initial value is fitted, and obtains correlation results, and judgement is compared with a reference value and measures accuracy.
The appraisal procedure of the present invention is in alignment precision evaluation process, for the dicing method that compares, it is ensured that wafer
Integrality, destructive influences will not be generated to wafer, and wafer used can do over again reuses, reduction assessed cost.
The appraisal procedure of the present invention is assessed without measuring alignment precision secondary graphics CD-SEM after being etched by wafer,
Optimize without additional CD-SEM measurement marks and measure, the design institute for avoiding the measurement of alignment precision secondary graphics increased is commented
Estimate cycle and cost.
The appraisal procedure of the present invention is tested by designing a series of alignment precision offsets, can be with the evaluation alignment of multi-angle
Precision method for measurement, designability is strong, and accuracy is high, simple, convenient and easily operated, disclosure satisfy that alignment precision method for measurement
The assessment of accuracy needs.
Description of the drawings
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings：
Fig. 1 is the appraisal procedure flow chart that the photoetching alignment precision measures accuracy；
Fig. 2 is photoetching alignment precision accuracy evaluation initial value and measuring value dependency diagram；
Fig. 3 is that photoetching alignment precision measures assessment mark schematic diagram；
Fig. 4 is to measure light source assessment result (Tx) schematic diagram (one)；
Fig. 5 is to measure light source assessment result (Mx) schematic diagram (two)；
Fig. 6 is measurement mark assessment result (Tx) schematic diagram (one)；
Fig. 7 is measurement mark assessment result (Mx) schematic diagram (two).
Specific embodiment
In order to solve the evaluation problem of photoetching alignment precision accuracy, design alignment precision compensates the appraisal procedure of the present invention
Value experiment, and realized by being exposed on actual wafer, then measured with alignment precision method for measurement to be assessed, with initial alignment essence
Degree offset is compared, and judges whether method for measurement meets measuring standard.
The control flow that the photoetching alignment precision measures the appraisal procedure of accuracy is shown in Figure 1, including walking as follows
Suddenly：
Step 1, design alignment precision measurement mark to be assessed, and be produced on mask plate.
Step 2, by techniques such as photoetching, etchings, front layer alignment figure is formed in front layer substrate；
Step 3, by given corresponding alignment precision offset matrix series (Tx, Ty, Rx, Ry, Mx, My, R ' x, R ' Y,
M ' X, M ' Y), it is exposed, is formed when layer alignment figure on wafer.
Step 4 measures the photoetching alignment precision on full wafer wafer, acquisition amount using alignment precision method for measurement to be assessed
Survey result.
Step 5, by alignment precision measurement to be assessed simulation calculate corresponding alignment precision offset, by its with to
Determine initial value to be fitted, obtain correlation results (shown in Figure 2), and judgement is compared with a reference value and measures accurately
Property.In Fig. 2, y=0.9536x+0.0003, R2=0.9911.Wherein, y is alignment precision measuring value, and x is initial for alignment precision
Value, R is linearly dependent coefficient.
If result judgement is accurate, method to be assessed is feasible；If result judgement is inaccurate, further optimization measures
Method or optimization measurement mark, the return to step 4 when choosing preferentially change method for measurement, the return to step when choosing preferentially change measurement mark
1, continue to assess.
The method of the present invention is suitable for the alignment precision method for measurement of each technology node, includes but are not limited to 130nm
Above, the such as the following technology node of 90nm, 65/55nm, 45/40nm, 32/28nm, 22/20nm, 16/14nm and 10nm.
The present invention method be suitable for different light source exposure bench, include but are not limited to I Lithographies machine, KrF litho machines,
ArF litho machines, EUV lithography board and electron beam lithography machine etc..
The matrix design experiment is the design of alignment precision offset.
The method of the present invention is suitable for the assessment of various alignment precision measuring methods, includes but are not limited to believe based on image
Number processing alignment precision method for measurement (IBO) and based on diffracted signal processing alignment precision method for measurement (DBO).
The method of the present invention is suitable for assessment and the measurement parameters that various alignment precision method for measurement measure alignment mark
Assessment.Various measurement marks and measurement alignment light source and the assessment for measuring light source parameter in such as IBO or DBO.
Alignment precision offset matrix series changes one or more offsets, composition system on the basis of a certain initial value
Column matrix condition is exposed, and obtains corresponding alignment precision wafer trace.
It is the translation (Tx, Ty) in X/Y directions, the silicon slice rotating (Rx, Ry) in X/Y directions that the offset, which includes grid parameter,
And the grid amplification (Mx, My) in X/Y directions.(R ' x, R ' are y) and X/Y directions for the mask plate rotation in X/Y directions for exposure region parameter
Mask plate magnifying power (M ' x, M ' is y).
Using method for measurement to be assessed measure wafer alignment precision, it is necessary to all wafers for doing overcompensation value variable into
Row measures, and obtains result and is analyzed.
Method for measurement measurement to be assessed analysis draws ten benefit values, and with one in initial ten benefit values or a few
Item carries out linear fit, obtains corresponding matched curve slope and related coefficient, and passes through a reference value and judge to measure accuracy.
Measuring basis value is set as the slope of curve and related coefficient scope, if slope of curve accuracy interval range is SL~
SU, related coefficient accuracy interval range is RL~1, wherein, SLFor minimum acceptable slope, SUSlope, R are subjected to for highestL
For minimum acceptable related coefficient.
SLUsual value range is 0.8~1.0, SUValue range is 1.0~1.2；RLValue range is 0.8~1.0.
Photoetching alignment precision measures the appraisal procedure of light source
By taking Mark2 in Fig. 3 (measurement mark 2) as an example, with polysilicon layer and active layer be aligned to assess target, assessment is adopted
With the alignment precision method for measurement of different light sources to the measurement accuracy of alignment precision.Fig. 3 (a) is measurement mark 1, Fig. 3 in Fig. 3
(b) it is measurement mark 2, Fig. 3 (c) is measurement mark 3, and layer is worked as in the expression of label 1, and 2 represent front layer.
Specific method is as follows：
Step a, design Mark2 alignment precision measurement marks, and is made and mask plate on.
Step b, by techniques such as photoetching, etchings, front layer alignment figure is formed in active layer (AA).
Step c, by given corresponding alignment precision offset (Tx, Ty, Rx, Ry, Mx, My, R ' x, R ' Y, M ' X, M '
Y), it is exposed on wafer, forms polysilicon layer alignment figure, specific offset such as table 1.
Step d, the photoetching on above-mentioned exposed wafer is measured using different measurement light sources (white light/green/red/yellow light)
Alignment precision obtains measurement.
1. alignment precision of table assessment photoetching offset experiment table
Step e, alignment precision measurement to be assessed simulation is calculated into corresponding alignment precision offset (such as 2 institute of table
Show), and be fitted with given initial value, correlation results (as shown in Figures 4 and 5) are obtained, then is compared and sentences with a reference value
It is disconnected to measure accuracy (this assesses reference value as slope range 0.9~1.1, related coefficient scope 0.9~1.0).
2. alignment precision light source of table assesses measurement table
It is the measurement based on Tx variations in Fig. 4, shows that green light and yellow light all meet measuring standard, wherein green light most
Good, the linear gradient of feux rouges and white light measures inaccurate not in reference range.Fig. 5 is the measurement knot based on Mx variations
Fruit shows that green light and yellow light comply with standard, and green light is optimal, and feux rouges linear gradient and related coefficient are all unsatisfactory for benchmark, white light line
Property slope is not inconsistent standardization.
Wherein, " ◇ " represents white light (linear) in Fig. 4, Fig. 5, and " ■ " represents green light (linear), and " ▲ " represents feux rouges (line
Property), "●" represents yellow light (linear).
In Fig. 4, white light, y=1.2034x+0.0754, R2=0.9874.Green light, y=1.0109x+0.0475, R2=
0.9985.Feux rouges, y=0.8327x+0.8182, R2=0.9691.Yellow light, y=0.9488x+0.1675, R2=0.9983.
In Fig. 5, white light, y=1.2945x-0.0016, R2=0.9894.Green light, y=0.9966x+0.0022, R2=
0.9991.Feux rouges, y=0.8836x+0.0071, R2=0.8843.
Yellow light, y=0.9402x+0.0026, R2=0.9916.
The appraisal procedure of photoetching alignment precision measurement mark
By taking Mark1-Mark3 (measurement mark 1-3) in Fig. 3 as an example, with polysilicon layer and active layer be aligned to assess mesh
Mark, assessment use measurement accuracy of the different alignment precision measurement marks to alignment precision, and specific method is as follows：
Step A, design Mark1-Mark3 alignment precision measurement marks, and is made and mask plate on.
Step B, by techniques such as photoetching, etchings, front layer alignment figure is formed in active layer (AA).
Step C, by given corresponding alignment precision offset (Tx, Ty, Rx, Ry, Mx, My, R ' x, R ' Y, M ' X, M '
Y), it is exposed on wafer, forms polysilicon layer alignment figure, specific offset such as table 1.
Step D, the photoetching alignment precision on above-mentioned exposed wafer is measured, obtains the measurement of different measurement marks.
Step E, alignment precision measurement to be assessed simulation is calculated into corresponding alignment precision offset (such as 3 institute of table
Show), and be fitted with given initial value, correlation results (such as Fig. 6 and 7) are obtained, and decision content is compared with a reference value
Survey accuracy (this assesses reference value as slope range 0.9~1.1, related coefficient scope 0.9~1.0).
3. alignment precision of table mark assessment measurement
Fig. 6 is the measurement based on Tx variations, shows that the linear gradient of Mark2 and related coefficient all meet measurement mark
Standard, and the linear gradient of Mark1 and related coefficient do not comply with standard, the linear gradient of Mark3 is not inconsistent standardization, shows
The measurement of Mark1 and Mark3 is inaccurate.Fig. 7 is the measurement based on Mx variations, shows that Mark 2 is complied with standard, Mark 1
Standard is not complyed with the linear gradient of Mark3, is measured inaccurate.The comprehensive measurement accuracy that can be seen that Mark2 is high.
Wherein, in Fig. 6, Fig. 7, label 5 (" ◇ ") represents measurement mark 1 (linear), and label 6 (" ■ ") represents measurement mark
2 (linear), label 3 (" ▲ ") represent measurement mark 3 (linear).
In Fig. 6, measurement mark 1, y=1.2148x-0.1075, R2=0.8878.Measurement mark 2, y=1.0109x+
0.0475, R2=0.9985.Measurement mark 3, y=0.8388x+0.6704, R2=0.9856.
In Fig. 7, measurement mark 1, y=1.3927x-0.0097, R2=0.9777.Measurement mark 2, y=0.9966x+
0.0022, R2=0.9991.Measurement mark 3, y=0.8896x+0.0116, R2=0.9309.
The present invention is described in detail above by specific embodiment, but these are not formed to the present invention's
Limitation.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these
It should be regarded as protection scope of the present invention.
Claims (14)
1. a kind of photoetching alignment precision measures the appraisal procedure of accuracy, it is characterised in that：Based on board during photolithographic exposure
Alignment precision offset do the experiment of a series of matrix design, and according to the measurement of alignment precision method for measurement to be assessed
It makes comparisons with the alignment precision offset of default exposure, so as to obtain correlation results, whether is located at according to correlation results
Standard interval range assesses the accuracy of alignment precision method for measurement.
2. a kind of photoetching alignment precision measures the appraisal procedure of accuracy, it is characterised in that：Include the following steps：
Step 1, design alignment precision measurement mark to be assessed, and is made and mask plate on；
Step 2, by photoetching, etching technics, front layer alignment figure is formed in front layer substrate；
Step 3, by given corresponding alignment precision offset matrix series, be exposed, formed when layer alignment on wafer
Figure；
Step 4 measures the photoetching alignment precision on full wafer wafer using alignment precision method for measurement to be assessed, obtains and measures knot
Fruit；
Alignment precision measurement to be assessed simulation is calculated corresponding alignment precision offset by step 5, and initial with giving
Value is fitted, and obtains correlation results, and judgement is compared with a reference value and measures accuracy.
3. according to the method described in claim 2, it is characterized in that：If result judgement is accurate, method to be assessed is feasible；Such as
Fruit result judgement is inaccurate, then further optimizes method for measurement or optimization measurement mark, returned when choosing preferentially changes method for measurement
Step 4, the return to step 1 when choosing preferentially change measurement mark, continues to assess.
4. method according to claim 1 or 2, it is characterised in that：It is measured suitable for the alignment precision of each technology node
Method, including more than 130nm, 90nm, 65/55nm, 45/40nm, 32/28nm, 22/20nm, 16/14nm and below 10nm technologies
Node.
5. method according to claim 1 or 2, it is characterised in that：Suitable for different light source exposure bench, including I linear lights
Quarter machine, KrF litho machines, ArF litho machines, EUV lithography board and electron beam lithography machine.
6. according to the method described in claim 1, it is characterized in that：Matrix design experiment the setting for alignment precision offset
Meter.
7. method according to claim 1 or 2, it is characterised in that：Suitable for the assessment of various alignment precision measuring methods,
Alignment precision method for measurement including the alignment precision method for measurement handled based on picture signal and based on diffracted signal processing.
8. method according to claim 1 or 2, it is characterised in that：Suitable for the measurement pair of various alignment precision method for measurement
The assessment of fiducial mark note and the assessment of measurement parameters.
9. according to the method described in claim 2, it is characterized in that：Alignment precision offset matrix series using a certain initial value as
Benchmark changes one or more offsets, and composition series matrix condition is exposed, and obtains corresponding alignment precision wafer print
Mark.
10. method according to claim 1 or 2, it is characterised in that：It is X/Y directions that the offset, which includes grid parameter,
Translation Tx, Ty；The silicon slice rotating Rx, Ry in X/Y directions；Grid the amplification Mx, My in X/Y directions；Exposure region parameter is X/Y directions
Mask plate rotation R ' x, R ' y and X/Y directions mask plate magnifying power M ' x, M ' y.
11. method according to claim 1 or 2, it is characterised in that：The alignment of wafer is measured using method for measurement to be assessed
Precision, it is necessary to be measured to all wafers for doing overcompensation value variable, analyzed by acquisition result.
12. method according to claim 1 or 2, it is characterised in that：Method for measurement measurement analysis to be assessed draws ten
Benefit value, and with one in initial ten benefit values or a few progress linear fits, obtain corresponding matched curve slope and
Related coefficient, and measurement accuracy is judged by a reference value.
13. method according to claim 1 or 2, it is characterised in that：Measuring basis value is set as the slope of curve and phase relation
Number scope, slope of curve accuracy interval range are SL~SU, related coefficient accuracy interval range is RL~1, wherein, SLFor
Minimum acceptable slope, SUSlope, R are subjected to for highestLFor minimum acceptable related coefficient.
14. according to the method for claim 13, it is characterised in that：SLUsual value range is 0.8~1.0, SUValue range
For 1.0~1.2；RLValue range is 0.8~1.0.
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