CN104698773B - Photoetching alignment mark structure and its manufacture method - Google Patents
Photoetching alignment mark structure and its manufacture method Download PDFInfo
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- CN104698773B CN104698773B CN201510149621.0A CN201510149621A CN104698773B CN 104698773 B CN104698773 B CN 104698773B CN 201510149621 A CN201510149621 A CN 201510149621A CN 104698773 B CN104698773 B CN 104698773B
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Abstract
The present invention provides a kind of photoetching alignment mark structure and its manufacture method, it is that one kind is mutually aligned precision graphic structure design and its manufacture method at many levels, all lithography alignment figures are in plane projection where to random layer lithography alignment figure, relatively same center is centrosymmetric figure, and the projection of all lithography alignment figures is according to the formation order nested successively and extension from inside to outside of lithography alignment figure, can operate among various photoetching process processing procedures, according to different demands, arbitrarily matching, to reach that not allergic effect ten thousand becomes to alignment request, disclosure satisfy that photoetching alignment mark between different levels is mutually aligned requirement, tradition alignment can be taken into account simultaneously to measure and 3 exposures, alignment needed for 4 exposures is measured, and compare the space for saving Cutting Road, reduces cost.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of photoetching alignment mark structure and its manufacture method.
Background technology
With continuous progressive, the continuous diminution of line width of integrated circuit fabrication process, the area of semiconductor devices just becomes
Less and less, the layout of semiconductor develops into the collection for integrating high-density multifunction from common simple function discrete device
Into circuit；By initial IC (integrated circuit) then to LSI (large scale integrated circuit), VLSI (super large-scale integration),
Up to the ULSI (ULSI) of today, the area of device further reduce, function is more fully powerful.Consider
The complexity of technique research and development, the restriction of chronicity and high cost etc. unfavorable factor, how state of the art base
The integration density of device is further improved on plinth, the area of chip is reduced, it is as much as possible on same piece of silicon chip to obtain effectively
Chip-count, so as to improve overall interests, will increasingly be subject to chip designer, the attention of manufacturer.Wherein photoetching process is just
The effect of key is responsible for, and photoetching is technique mask graph being transferred to by series of steps such as alignment, exposures on wafer
Process, in the manufacturing process of semiconductor chip, generally will could complete whole manufacturing process by multilayer photoetching process, and such as
The position alignment of layer litho pattern and front layer litho pattern (figure on wafer) is worked as in what control, to meet alignment precision
(overlay) requirement is most important step in multilayer photoetching process, and alignment precision refers to the photoetching of the layer with layer of wafer
The position alignment error of figure.
Multiple graphics technology (Double Patterning, Triple Patterning), such as LELE, LLE.LLE is
Refer to the different photoresist of double exposure, once development completes the superposition of two-layer.The method that then have developed LELE, its method class
Surface imaging transfer techniques are similar to, i.e., figure is first formed on thin photoresist, then it is thin by what is deposited in advance by etching
Hard mask etching falls, and by first time pattern transfer to hard mask, then is formed collectively as mask layer with secondary photoresist
Targeted graphical, it is to avoid the interaction of Twi-lithography glue in LLE.
An alignment precision measurement pattern is typically respectively placed in alignment precision measurement in the figure of upper and lower two lithography layers,
Ensure the alignment between two-layer litho pattern by measuring two deviations of the relative position of alignment patterns.Conventional alignment
Accurate test pattern includes interior outer container (box-in-box) and inside and outside stripe shape (bar-in-bar), refers to shown in Fig. 1 and Fig. 2,
Fig. 1 is inside and outside frame-type alignment precision measurement pattern, and Fig. 2 is inside and outside bar shaped alignment precision measurement pattern, wherein, internal figure is right
Quasi- layer pattern, housing is to be aligned layer pattern.This kind of alignment patterns are widely used in industry at present, but with semiconductor skill
The Great Leap Forward formula development of art, at present it also seen that the drawbacks of this kind of intrinsic figure, mainly has and following to wait to improve part：
1st, tradition alignment measurement pattern puts the layout design space occupied more than comparing, closes 1, N and closes 1 2-in-1 1,4 and covers
On masterplate, the space of Cutting Road can be less and less, but required resolution chart cannot but be reduced, and traditional alignment patterns are to space
Taking will cause that mask has to give up some resolution charts before publication, small layout design with publish limited also by
This；
2nd, tradition alignment measurement pattern is not in the case where extra front layer alignment patterns quantity is increased, it is impossible to carry out astride hierarchy
Between alignment precision measure, such as when the second level to the first level alignment it is devious in the case of, then cannot reuse
Third level is directly calibrated to the mode of the first level, and can only continue to be directed at the second level that there is deviation；
3rd, tradition alignment measurement pattern is aligned when the double exposure Double Patterning of advanced process are applied to
Error and residue problem are difficult to improve, and reason is the single level alignment for being limited to tradition alignment measurement pattern, when carrying out the
Re-expose formula is, it is necessary to select the different front layer marks to carry out to locating tab assembly, it is clear that cannot fix same front layer mark and be surveyed
Amount；
4th, tradition is directed at measurement pattern in newly-increased graphics hierarchy, it is necessary to increasing extra front layer is aligned mark, such one
To publish again including 2 layers of light shield within front layer light shield, increase extra cost；
Additionally, also have the structure design of related multi-level alignment in the prior art, and it is shown in Figure 3, first in step
Photoetching and etch and aoxidize substance markers 31 for the outer layer first direction (Y-direction) that is aligned in rapid 1, then light in step 2
Carve and etch the outer layer second direction (X-direction) for being aligned and aoxidize substance markers 32, internal layer light is then carried out in step 3
Carve alignment mark 33 foundation, you can carry out internal layer alignment patterns X, Y-direction be aligned with outer layer respectively figure X, Y-direction it is right
Quasi- precision measure.Although this kind of structure can simultaneously carry out three layers of alignment, two sides of X, Y cannot be simultaneously covered in design
To deviation collect, vector fitting degree needs to be queried, and it is right that this can also exist for developing into less than 28 nanometers chip structures
Accurate bad risk.And current photoetching technique has no longer stayed in 2 modes of exposure (double exposure), has risen to 3
Secondary exposure, or even 4 exposures, this kind of structure cannot equally carry out the amount of subsequent multi-layer mark alignment by fixed front layer mark
Survey.
Accordingly, it would be desirable to one it is new it is multi-level be mutually aligned structure design, to avoid drawbacks described above.
The content of the invention
It is an object of the invention to provide a kind of photoetching alignment mark structure and its manufacture method, different levels are disclosure satisfy that
Between photoetching alignment mark be mutually aligned requirement, while can take into account tradition alignment measure and 3 exposures, 4 exposures needed for
Alignment is measured, and compares the space for saving Cutting Road, reduces cost.
To solve the above problems, the present invention proposes a kind of photoetching alignment mark structure, is included on each layer in chronological order
The lithography alignment figure for sequentially forming；All lithography alignment figures in plane projection where to random layer lithography alignment figure,
Relatively same center is centrosymmetric figure, and the projection of all lithography alignment figures is suitable according to the formation of lithography alignment figure
Sequence nested successively and extension from inside to outside；Every layer of lithography alignment figure containing at least two mutually orthogonal directions to fiducial mark
Note, it is described when layer lithography alignment figure is set up, choose at least one of which front layer lithography alignment figure and be used as to be aligned figure, it is described
When layer lithography alignment figure is set up according to the alignment precision of all alignment marks of each front layer lithography alignment figure chosen,
And with the front layer lithography alignment pattern alignment chosen, it is and described when the alignment mark of layer lithography alignment figure is relative to selected
The alignment precision of corresponding alignment mark is used for the foundation of rear layer lithography alignment figure in front layer lithography alignment figure.
Further, the lithography alignment figure is through hole type, line style or channel-type structure.
Further, the length and width size of every layer of lithography alignment figure is identical or different, and the line width of each alignment mark is identical
Or it is different.
Further, the photoetching alignment mark structure of adjacent two layers lithography alignment figure constitution includes inside casing, housing and interior
The raceway groove and photoresist of frame and housing spacer region.
Further, it is described when the photoetching alignment mark structure is the photoetching alignment mark structure of double exposure processing procedure
Photoetching alignment mark structure includes that one layer is used for the front layer lithography alignment figure that is aligned and one layer is used to being aligned when layer light
Alignment patterns are carved, the front layer lithography alignment figure is inside casing, it is described when layer lithography alignment figure is housing.
Further, the photoetching alignment mark structure is applied to I Lithographies machine, KrF litho machines, ArF litho machines and EUV
At least one of litho machine.
The present invention also provides a kind of manufacture method of one of above-mentioned photoetching alignment mark structure, including：
In chronological order photoetching and at least one of which is etched for the front layer lithography alignment figure that is aligned successively；
Front layer lithography alignment figure described at least one of which is chosen to be used as to be aligned figure when layer lithography alignment figure is set up
Shape, and according to the alignment precision of selected front layer lithography alignment figure, set up equal with selected front layer lithography alignment figure
Alignment when layer lithography alignment figure.
Further, according to the alignment precision of selected front layer lithography alignment figure, set up and selected front layer light
Carve alignment patterns be aligned when layer lithography alignment figure, including：
According to the alignment precision of selected front layer lithography alignment figure, inside casing and housing are being set up when layer；
The alignment precision of the inside casing and housing relative to selected front layer lithography alignment figure is measured respectively；
Will measure alignment precision average value as when the alignment precision of layer lithography alignment figure, for follow-up photoetching
The foundation of alignment patterns.
Further, set up with selected front layer lithography alignment figure be aligned after layer lithography alignment figure,
Also include：
To being etched when layer lithography alignment figure, mark is aligned as rear layer lithography alignment figure；
Choose after front layer lithography alignment figure described at least one of which and/or etching when layer lithography alignment figure be used as it is described
Figure is aligned when layer lithography alignment figure is set up afterwards, and according to the alignment precision of selected lithography alignment figure, is set up
The rear layer lithography alignment figure being aligned with selected lithography alignment figure.
Further, when the manufacture method is applied to more than 3 times exposure manufacture process, including：
Photoetching simultaneously etches ground floor lithography alignment figure for being aligned；
According to the alignment precision of ground floor lithography alignment figure, the second layer with ground floor lithography alignment pattern alignment is set up
Lithography alignment figure, and measure alignment precision of the second layer lithography alignment figure relative to ground floor lithography alignment figure；
Second layer lithography alignment figure is etched, figure is aligned as third layer lithography alignment figure；
Ground floor lithography alignment figure and/or second layer lithography alignment figure are chosen as third layer lithography alignment figure
Figure is aligned, the alignment precision of the lithography alignment figure selected by is set up and selected lithography alignment pattern alignment
Third layer lithography alignment figure, and measure alignment of the third layer lithography alignment figure relative to selected lithography alignment figure
Precision；
Further, when the manufacture method is applied to more than 4 times exposure manufacture process, including：
Photoetching is simultaneously etched for the fixed front layer lithography alignment figure being aligned；
According to the alignment precision of front layer lithography alignment figure, three layers of company with front layer lithography alignment pattern alignment are set up successively
Continuous lithography alignment figure；
Alignment precision of the three layers of continuous lithography alignment figure relative to front layer lithography alignment figure is measured respectively.
Compared with prior art, the present invention is provided photoetching alignment mark structure and its manufacture method, with advantages below：
1st, it is to be aligned outside layer lithography alignment figure is occupied due in front layer lithography alignment figure residence and to be aligned figure
Figure, therefore the present invention can be used for being mutually aligned between different levels in photoetching process；
2nd, due to choosing at least one of which front layer lithography alignment figure as being aligned when layer lithography alignment figure is set up
Figure, therefore strengthen the stability of alignment precision, extra expenses during newly-increased graphics hierarchy are reduced, reduce cost；
3rd, technical scheme, can be using ground floor as fixed quilt when in for multiple-exposure photoetching process
Alignment patterns, therefore the unpredictability brought by being aligned the change of figure is avoided, reduce the error of alignment precision
With high order part, it is ensured that the accuracy of photoetching process alignment precision, uniqueness, and reduce and take up room；
4th, technical scheme is more than 3 times in exposure photoetching technology, it is possible to achieve cross-layer is aligned, therefore changes
The mode that intrinsic adjacent double-layers alignment in traditional double exposure or 3 exposure photoetching technologies is measured, saves chip package institute
With taking up room for Cutting Road, Free up Memory is to other resolution charts, the extra chip number of increase, while solving small domain
The limitation of Cutting Road insufficient space when design is using All-in-One level mask；
5th, among technical scheme can operate with various photoetching process processing procedures, according to different demands, arbitrarily match
The critical size (graphic width and mark line width) of lithography alignment figure, to reach that not allergic effect ten thousand becomes to alignment request.
Brief description of the drawings
Fig. 1 to Fig. 3 is respectively traditional photoetching alignment mark structure；
Fig. 4 is the photoetching alignment mark structure of one embodiment of the invention；
Fig. 5 sets up for foundation kth layer lithography alignment figure in the photoetching alignment mark structure of another embodiment of the present invention
I-th layer of lithography alignment figure；
Fig. 6 is the manufacture method flow chart of the photoetching alignment mark structure of one embodiment of the invention；
Fig. 7 is structural representation (4 exposures in the manufacturing process of the photoetching alignment mark structure of another embodiment of the present invention
Light photoetching process).
Specific embodiment
To become apparent the purpose of the present invention, feature, specific embodiment of the invention is made below in conjunction with the accompanying drawings
Further instruction, however, the present invention can be realized with different forms, it is not considered that being simply confined to described embodiment.
It should be noted that：Unless specifically stated otherwise, the part and positioned opposite, the digital table of step for otherwise illustrating in these embodiments
Do not limited the scope of the invention up to formula and numerical value.Simultaneously, it should be appreciated that for the ease of description, each portion shown in accompanying drawing
The size divided not is to be drawn according to actual proportionate relationship.Below to the description of at least one exemplary embodiment actually
It is merely illustrative, never as to the present invention and its application or any limitation for using.For association area ordinary skill
Technology, method and apparatus may be not discussed in detail known to personnel, but in the appropriate case, the technology, method and apparatus
A part for specification should be considered as authorizing.In all examples shown here and discussion, any occurrence should be explained
It is merely exemplary, not as limitation.Therefore, the other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once in a certain Xiang Yi accompanying drawing
It is defined, then it need not be further discussed in subsequent accompanying drawing.
Fig. 4 is refer to, and the present invention proposes a kind of photoetching alignment mark structure, successively shape is included on each layer in chronological order
Into lithography alignment figure 1,2,3,4 ... .., N；All lithography alignment figures are put down to where random layer lithography alignment figure
When face projects, relatively same center is centrosymmetric figure, and all lithography alignment figures projection according to lithography alignment figure
The nested successively and extension from inside to outside of the formation order of shape.In the present embodiment, all lithography alignment figures are projected in A planes
Afterwards, ground floor lithography alignment figure 1 is in penetralia, and second layer lithography alignment figure 2 is peripheral in ground floor lithography alignment figure 1,
In the periphery of second layer lithography alignment figure 2, by that analogy, last layer of lithography alignment figure N's third layer lithography alignment figure 3 exists
Its preceding layer lithography alignment figure N-1 peripheries.
Every layer of lithography alignment figure of the invention is containing the alignment mark at least two mutually orthogonal directions.The present invention
One embodiment in, all lithography alignment figures include in X, Y both direction be used for follow-up photoetching alignment patterns alignment
The vector result that precision is measured, specifically, ground floor lithography alignment figure 1 is set up by photoetching and etching first, as right
Quasi- figure, ground floor lithography alignment figure 1 is main by two alignment marks on two alignment marks and Y-direction in X-direction
Composition, therefore include the vector result for being used for the measurement of follow-up photoetching alignment patterns alignment precision in X, Y both direction, Ran Hougen
According to the alignment precision in X, Y both direction of ground floor lithography alignment figure 1, continue to be extended using photoetching and etching technics extension
Go out (set up) second layer lithography alignment figure 2, to be directed at ground floor lithography alignment figure 1, by that analogy, in follow-up different layers
Secondary extension expands multi-level lithography alignment figure.Wherein, extension expansion process includes being measured and cross-layer when layer alignment precision
The measurement of alignment precision between secondary.I.e. when layer lithography alignment figure is set up, choose front layer lithography alignment figure and be used as to be aligned figure
Shape, the front layer lithography alignment figure of selection can be with when the adjacent front layer lithography alignment figure, or astride hierarchy of layer
Front layer lithography alignment figure, can only choose one layer of front layer lithography alignment figure, can be choosing multilayer front layer lithography alignment figure
Shape, choose multilayer when can further improve foundation when the alignment precision of layer lithography alignment figure, i.e., when layer lithography alignment figure
Shape according to choose each front layer lithography alignment figure all alignment marks alignment precision and set up, foundation when layer photoetching
Alignment patterns are aligned one by one with selected front layer lithography alignment figure, then, measure one by one described when layer lithography alignment figure
Alignment precision of the alignment mark of shape relative to corresponding alignment mark in selected front layer lithography alignment figure, it is clear that including
The measurement of alignment precision between astride hierarchy, the alignment precision measured is used for foundation when setting up of rear layer lithography alignment figure.
In one embodiment of the present of invention, Fig. 5 is refer to, in order to improve the stabilization of alignment precision (i.e. alignment precision) measurement
Property, choosing front layer lithography alignment figure k is used as to be aligned figure, then when setting up as layer lithography alignment figure i, between set up
Dual alignment mark is (i.e. as shown in Figure 5, when layer lithography alignment figure i itself includes inside casing alignment mark and housing to fiducial mark
Note), dual alignment mark is carried out respectively the alignment of front layer lithography alignment figure k is measured, then average its measurement, averagely
It is worth as when the alignment precision of layer lithography alignment figure i, to reach reduction error in measurement, improves the effect for measuring stability.Cause
This, every layer carve alignment patterns can include multiple alignment mark, such as including dual alignment mark, i.e., including inside casing, housing and
The raceway groove and photoresist of inside casing and housing spacer region, to improve the stability of alignment precision (i.e. alignment precision) measurement.
General, in the lithography alignment figure, the length and width size of every layer of lithography alignment figure can be with identical or different；Often
The line width of individual alignment mark can be with identical or different；The spacing of all lithography alignment figures can be uniform after projection, also may be used
To be uneven, wherein, refer between Fig. 4, two alignment marks in every layer of a width of its X-direction of lithography alignment figure
Away from two spacing of alignment mark in a length of its Y-direction；The line width of the alignment mark of any two-layer lithography alignment figure can be with
Identical, it is also possible to different, the line width of the alignment mark in every layer of lithography alignment figure itself both direction can be with identical, it is also possible to
It is different.
Therefore, the lithography alignment dimension of picture between the different levels of photoetching alignment mark structure of the invention is variable, alignment
The line width of mark is variable, and the lithography alignment figure of specific level can change according to actual area size, can be applied to each
Individual technology node difference photoetching level and different size Cutting Road type, the different photoetching levels include but are not limited to through hole
Shape, line style and channel-like level；And include the extension of X, Y both direction and shrink, integrally-built length and width variable dimension is put
Putting region can be variable according to real space, can be applied to different light source exposure bench and various species lithographic process, described
Light source exposure bench includes but are not limited to I Lithographies machine, KrF litho machines, ArF litho machines and EUV lithography board, the photoetching
Processing procedure includes but is not limited to double exposure processing procedure, 3 exposure manufacture process and 4 exposure manufacture process.
In one embodiment of the present of invention, the length and width of the photoetching alignment mark structure of adjacent two layers lithography alignment figure constitution
Variable dimension, including inside casing, housing and inside casing and housing spacer region raceway groove and photoresist, similar to traditional double exposure
The photoetching alignment mark structure of processing procedure, but inside casing figure is for being aligned, and outline pattern is used to be aligned.
In one embodiment of the present of invention, when the photoetching alignment mark structure is used for double exposure making technology, mainly
By two-layer lithography alignment figure constitution, i.e., described photoetching alignment mark structure includes one layer of ground floor photoetching pair for being used to be aligned
Quasi- figure 1 and one layer of second layer lithography alignment figure 2 for being aligned, and ground floor lithography alignment figure is inside casing, its length
Include but are not limited to be 1 micron with wide, second is housing when layer lithography alignment figure 2, and its length and width are included but are not limited to
It is 2 microns.
In one embodiment of the present of invention, when the photoetching alignment mark structure is used for more than 3 times exposure manufacture process technique, the
The length of one layer of front layer lithography alignment figure 1 and it is wide can be 3 microns, the length and width of second layer front layer lithography alignment figure 2 can
To be 4.5 microns, by that analogy, the length and width of n-th layer front layer lithography alignment figure can be [3+1.5* (N-1)] micron, N
More than 2.And in the X of all lithography alignment figures, Y-direction, line width can be with identical or different, pattern spacing (i.e. all of inside casing
With housing spacer region) can be with identical or different.
It should be noted that in other embodiments of the invention, technical scheme of the invention is applied to more than 3 times
In exposure manufacture process technique, photoetching, the embodiment of etching normal flow etc., photoetching alignment mark structure can also using it is above-mentioned for
The setting wide of inside and outside wire, but be not limited to above-mentioned setting, i.e., in other embodiments of the invention, ground floor front layer photoetching pair
The length of quasi- figure 1 and it is wide can be but not limited to 3 microns, the length and width of second layer front layer lithography alignment figure 2 can be but not
It is limited to 4.5 microns, n-th layer front layer lithography alignment figure and ground floor front layer lithography alignment figure 1, second layer front layer lithography alignment
The length of figure 2 and relation wide, can be but not limited to [3+1.5* (N-1], for example can also be into other linearly or nonlinearly
Functional relation, or non-functional relation.
In one embodiment of the present of invention, alignment tree can be set up according to actual photoetching process processing procedure, be wrapped on the alignment tree
Include the relation of every layer of alignment precision of lithography alignment figure and the alignment precision of front layer lithography alignment figure.
The present invention also provides a kind of manufacture method of one of above-mentioned photoetching alignment mark structure, including：
In chronological order photoetching and at least one of which is etched for the front layer lithography alignment figure that is aligned successively；
Front layer lithography alignment figure described at least one of which is chosen to be used as to be aligned figure when layer lithography alignment figure is set up
Shape, and according to the alignment precision of selected front layer lithography alignment figure, set up equal with selected front layer lithography alignment figure
Alignment when layer lithography alignment figure；
To being etched when layer lithography alignment figure, mark is aligned as rear layer lithography alignment figure；
Choose after front layer lithography alignment figure described at least one of which and/or etching when layer lithography alignment figure be used as it is described
Figure is aligned when layer lithography alignment figure is set up afterwards, and according to the alignment precision of selected lithography alignment figure, is set up
The rear layer lithography alignment figure being aligned with selected lithography alignment figure.
Fig. 4 and Fig. 6 is refer to, in one embodiment of the invention, the manufacture method of the photoetching alignment mark structure,
It is specific as follows：
Photoetching simultaneously etches (set up) ground floor lithography alignment figure 1；
Photoetching simultaneously etches (set up) second layer lithography alignment figure 2；
Photoetching simultaneously etches (set up) third layer lithography alignment figure 3；
……
Photoetching simultaneously etches (set up) i-th layer of lithography alignment figure i；
……
Photoetching simultaneously etches (set up) n-th layer lithography alignment figure N.
Wherein, the ground floor lithography alignment figure 1 for defining includes alignment essence when being set up for lithography alignment figure
Measurement surveys X, Y the both direction vector parameters for needing, then X, Y the both direction vector according to ground floor lithography alignment figure 1
Parameter (equivalent to the alignment precision of ground floor lithography alignment figure 1), defines be aligned with ground floor lithography alignment figure 1
Two layers of lithography alignment figure 2, and second layer lithography alignment figure 2 and ground floor lithography alignment figure are carried out by light microscope
Alignment precision measurement, obtain the alignment precision of second layer lithography alignment figure 2；Then, second layer lithography alignment figure 2 is entered
Row etching is aligned figure as third layer lithography alignment figure 3；Followed by, choose ground floor lithography alignment figure 1 and/or
Second layer lithography alignment figure 2 as third layer lithography alignment figure 3 the figure that is aligned, according to selected by lithography alignment figure
The alignment precision of shape, sets up the third layer lithography alignment figure 3 with selected lithography alignment pattern alignment, and carry out third layer
Lithography alignment figure and second layer lithography alignment figure 2, the alignment precision measurement of ground floor lithography alignment figure 1, obtain the 3rd
The alignment precision of layer lithography alignment figure 3；Finally, by that analogy, multi-level light is expanded in follow-up different levels successively extension
Carve alignment patterns 4 ... .., N, extension expansion process include adjacent layer alignment precision measure and astride hierarchy between alignment precision
Measure.When layer lithography alignment figure is set up, selection it is more as the front layer lithography alignment figure for being aligned figure, when layer light
The alignment precision for carving alignment patterns is higher.
Fig. 5 is refer to, in order to reduce error in measurement, the effect for measuring stability is improved, photoetching is simultaneously etched (set up)
It is specific as follows the step of layer lithography alignment figure：
Front layer lithography alignment figure k is chosen to be used as to be aligned figure, and according to the alignment essence of front layer lithography alignment figure k
Degree, inside casing alignment mark and housing alignment mark are being set up when layer；
The alignment precision of the inside casing and housing relative to front layer lithography alignment figure k is measured respectively；
Will measure alignment precision average value as when the alignment precision of layer lithography alignment figure, for follow-up photoetching
The foundation of alignment patterns.
In one embodiment of the present of invention, more than 3 times in exposure manufacture process, the manufacturer of the photoetching alignment mark structure
Method includes：
Photoetching simultaneously etches ground floor lithography alignment figure for being aligned；
According to the alignment precision of ground floor lithography alignment figure, the second layer with ground floor lithography alignment pattern alignment is set up
Lithography alignment figure, and measure alignment precision of the second layer lithography alignment figure relative to ground floor lithography alignment figure；
Second layer lithography alignment figure is etched, figure is aligned as third layer lithography alignment figure；
Ground floor lithography alignment figure and/or second layer lithography alignment figure are chosen as third layer lithography alignment figure
Figure is aligned, the alignment precision of the lithography alignment figure selected by is set up and selected lithography alignment pattern alignment
Third layer lithography alignment figure, and measure alignment of the third layer lithography alignment figure relative to selected lithography alignment figure
Precision.
It should be noted that above-mentioned first, second and third layer of lithography alignment figure is sensu lato continuous three layers of lithography alignment figure
Shape, is not restricted to the first, second and third layer of lithography alignment figure 1,2,3 for originally forming, therefore, said process can be promoted
To 4 times, the manufacture of the lithography alignment figure of 5 three layers of arbitrary continuations even more in multiexposure, multiple exposure technique.
In one embodiment of the present of invention, Fig. 7 is refer to, more than 4 times in exposure manufacture process, the photoetching alignment mark knot
The manufacture method of structure includes fixing a front layer lithography alignment figure as figure is aligned, and realizes that the alignment of astride hierarchy is measured, tool
Body is as follows：
Photoetching is simultaneously etched for the fixed front layer lithography alignment figure 01 being aligned；
According to the alignment precision of front layer lithography alignment figure 01, three be aligned with front layer lithography alignment figure 01 are set up successively
The continuous lithography alignment figure 11,12,13 of layer；
Alignment precision of the lithography alignment figure 11,12,13 relative to front layer lithography alignment figure 01 is measured respectively.
In said process, it is fixed, unique constant that what third photo etching was chosen is aligned figure, and such mode is rejected
Front layer is aligned figure and changes the unpredictability brought, and reduces the error and high order part of alignment precision, it is ensured that light
The accuracy of carving technology alignment precision, uniqueness, and reduce and take up room.
In sum, photoetching alignment mark structure of the invention and its manufacture method, are that one kind is mutually aligned essence at many levels
Degree graphic structure design and its manufacture method, can operate among various photoetching process processing procedures, according to different demands, random
Match somebody with somebody, to reach that not allergic effect ten thousand becomes to alignment request.Structure this first can efficiently reduce test pattern during chip production
Shared area, the area of saving can be used to increase extra chip area, it can also be used to place other resolution charts.Secondly
The present invention can also be measured setting up alignment measurement bridge between original level that cannot be measured, and be that risk assessment is laid afterwards
Basis.Furthermore, the present invention can improve measurement stability, reduce error in measurement.Finally, the present invention also can be used for advanced process pair
Re-exposure Double Patterning lithography layers alignment precision is measured, and can reduce its alignment error and high-order compensation part.
Obviously, the above is described to specific embodiment of the invention.It is to be appreciated that the invention is not limited in
Above-mentioned particular implementation, wherein the method and processing procedure that do not describe in detail to the greatest extent are construed as with the common side in this area
Formula is practiced；Those skilled in the art can to invention carry out it is various change and modification without deviating from it is of the invention spirit and
Scope.So, if these modifications of the invention and modification belong within the scope of the claims in the present invention and its equivalent technologies,
Then the present invention is also intended to comprising these changes and modification.
Claims (3)
1. a kind of manufacture method of photoetching alignment mark structure, it is characterised in that including：
In chronological order photoetching and at least one of which is etched for the front layer lithography alignment figure that is aligned successively；
Front layer lithography alignment figure described at least one of which is chosen as the figure that is aligned when layer lithography alignment figure is set up, and
According to the alignment precision of selected front layer lithography alignment figure, foundation is aligned with selected front layer lithography alignment figure
When layer lithography alignment figure, including：
According to the alignment precision of selected front layer lithography alignment figure, inside casing and housing are being set up when layer；
The alignment precision of the inside casing and housing relative to selected front layer lithography alignment figure is measured respectively；
The average value of the alignment precision that will be measured is used as when the alignment precision of layer lithography alignment figure；
To being etched when layer lithography alignment figure, mark is aligned as rear layer lithography alignment figure；
Choose front layer lithography alignment figure described at least one of which and/or layer after layer lithography alignment figure is used as described after etching
Figure is aligned when lithography alignment figure is set up, and according to the alignment precision of selected lithography alignment figure, is set up and institute
The rear layer lithography alignment figure that the lithography alignment figure of selection is aligned.
2. the method for claim 1, it is characterised in that when the manufacture method is applied to more than 3 times exposure manufacture process, bag
Include：
Photoetching simultaneously etches ground floor lithography alignment figure for being aligned；
According to the alignment precision of ground floor lithography alignment figure, the second layer photoetching with ground floor lithography alignment pattern alignment is set up
Alignment patterns, and measure alignment precision of the second layer lithography alignment figure relative to ground floor lithography alignment figure；
Second layer lithography alignment figure is etched, figure is aligned as third layer lithography alignment figure；
Ground floor lithography alignment figure and/or second layer lithography alignment figure are chosen as the right of third layer lithography alignment figure
Quasi- figure, the alignment precision of the lithography alignment figure selected by sets up the with selected lithography alignment pattern alignment
Three layers of lithography alignment figure, and measure alignment essence of the third layer lithography alignment figure relative to selected lithography alignment figure
Degree.
3. the method for claim 1, it is characterised in that when the manufacture method is applied to more than 4 times exposure manufacture process, bag
Include：
Photoetching is simultaneously etched for the fixed front layer lithography alignment figure being aligned；
According to the alignment precision of front layer lithography alignment figure, set up continuous with three layers of front layer lithography alignment pattern alignment successively
Lithography alignment figure；
Alignment precision of the three layers of continuous lithography alignment figure relative to front layer lithography alignment figure is measured respectively.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106981435B (en) * | 2016-01-15 | 2019-12-03 | 无锡华润上华科技有限公司 | A kind of photoetching inspection graphic structure |
| TWI677772B (en) * | 2016-01-21 | 2019-11-21 | 聯華電子股份有限公司 | Advanced process control method |
| CN106019860B (en) * | 2016-07-27 | 2018-12-11 | 京东方科技集团股份有限公司 | A kind of determination method of alignment precision |
| CN109669325A (en) * | 2017-10-17 | 2019-04-23 | 晶能光电（江西）有限公司 | A kind of lithography alignment method |
| CN109240050A (en) * | 2018-11-19 | 2019-01-18 | 赛莱克斯微系统科技（北京）有限公司 | A kind of photolithography method, exposure mask and lithography system |
| CN112394623B (en) * | 2019-08-14 | 2022-03-01 | 浙江驰拓科技有限公司 | Alignment method of photoetching process |
| CN111708254B (en) * | 2020-05-28 | 2021-06-01 | 长江存储科技有限责任公司 | Photoetching alignment method and system |
| CN114326335B (en) * | 2020-09-30 | 2024-05-17 | 中国科学院微电子研究所 | Alignment mark system and alignment method for pattern layer alignment |
| CN113093479B (en) * | 2021-04-02 | 2022-10-28 | 长鑫存储技术有限公司 | Alignment measurement mark structure and alignment measurement method |
| CN114236983B (en) * | 2021-12-30 | 2024-03-22 | 北海惠科半导体科技有限公司 | Manufacturing method of alignment mark of photoetching machine and wafer |
| CN115390374B (en) * | 2022-11-01 | 2023-04-04 | 睿力集成电路有限公司 | Overlay error measurement method and method for controlling semiconductor manufacturing process |
| CN116540507B (en) * | 2023-07-05 | 2023-11-03 | 合肥晶合集成电路股份有限公司 | Method, system and manufacturing method for determining exposure pattern in photoetching mask |
| CN117950279B (en) * | 2024-03-14 | 2024-07-02 | 粤芯半导体技术股份有限公司 | Method and device for measuring critical dimension of graph, electronic equipment and storage medium |
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