CN114296325B - Method for representing accuracy of overlay accuracy measurement method - Google Patents
Method for representing accuracy of overlay accuracy measurement method Download PDFInfo
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- CN114296325B CN114296325B CN202210097317.6A CN202210097317A CN114296325B CN 114296325 B CN114296325 B CN 114296325B CN 202210097317 A CN202210097317 A CN 202210097317A CN 114296325 B CN114296325 B CN 114296325B
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Abstract
The invention discloses a method for representing the accuracy of an overlay accuracy measurement method, which comprises the following steps: and firstly, carrying out first exposure on the wafer with the front-layer overlay accuracy mark, carrying out first measurement, collecting overlay accuracy data of the whole wafer, obtaining an optimal complement value, and reworking the wafer. And step two, selectively adding fixed offset on the N shots and uploading the fixed offset to a photoetching machine. Thirdly, carrying out secondary exposure on the wafer by combining the optimal complement value and the fixed offset; and performing a second measurement to collect overlay accuracy data of the whole wafer. And step four, performing simulation calculation by using the overlay accuracy measurement values of the non-selected shots to obtain the overlay accuracy simulation values of the selected shots. And fifthly, subtracting the overlay accuracy simulation value from the overlay accuracy measurement value of each selected shot to obtain an offset value of each selected shot, and performing point-to-point comparison and judgment on the accuracy of the overlay accuracy measurement method through the fixed offset value and the offset value of each selected shot. The invention can simplify the process and improve the test speed.
Description
Technical Field
The present invention relates to a method for manufacturing a semiconductor integrated circuit, and more particularly, to a method for characterizing accuracy of an overlay accuracy measurement method.
Background
The existing overlay accuracy measurement methods are mainly divided into an image overlay (image based overlay, IBO) based method and a diffraction overlay (diffraction based overlay, DBO) based method. The measurement of overlay accuracy by IBO and DBO is an indirect measurement. In the prior art, in order to characterize the accuracy of the overlay accuracy of IBO and DBO measurement, the method of directly measuring the overlay accuracy is needed to be implemented, and the prior art mainly adopts a scanning electron microscope (CDSEM) Overlay (OVL) mark (mark) for measuring the characteristic dimension, namely a CDSEM OVL mark.
As shown in fig. 1, the method is a layout of CDSEM OVL mark adopted in the existing method for characterizing the accuracy of the overlay accuracy measurement method; the CDSEM OVL mark includes an array of front layer marks 101 and an array of current layer marks 102. In the existing method, after the photoetching process of the current layer mark 102 is finished, an etching process is performed to expose the front layer mark 101 to directly measure the front and rear layer offset, and the measurement structure of the overlay accuracy obtained by directly measuring the CDSEM OVL mark is compared with the overlay accuracy measurement results of the IBO and the DBO, so that the accuracy of the overlay accuracy measurement results of the IBO and the DBO is represented.
However, the use of CDSEM mark has the following drawbacks:
first, it is not possible to use the layer for all process layers (layers) and special design is required according to different layer process attributes.
And secondly, the measurement cannot be performed at the photoetching station, the front layer is exposed through the etching process to perform the measurement, and meanwhile, the influence of the etching process on the measurement result is introduced.
Again, CDSEM measurement is slow, which is not conducive to large-scale collection of data for whole wafers.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method for representing the accuracy of the overlay accuracy measurement method, which can be realized without adopting CDSEM (code division multiple access) marks, can be universal for all layers, and can be realized without carrying out etching process, thereby simplifying the process method and improving the test speed.
In order to solve the technical problems, in the method for characterizing the accuracy of the overlay accuracy measurement method, the overlay accuracy measurement method adopts a front layer overlay accuracy mark and a current layer overlay accuracy mark to carry out offset measurement to obtain overlay accuracy data; the method for characterizing the accuracy of the overlay accuracy measurement method comprises the following steps:
step one, providing a wafer with a front layer alignment precision mark, and performing first exposure on the wafer by adopting a photomask with a current layer alignment precision mark, wherein the first exposure can form the current layer alignment precision mark consisting of photoresist patterns on the wafer.
And performing first measurement to collect overlay accuracy data of the whole wafer, obtaining an optimal complement value and reworking the wafer.
And step two, selectively adding fixed offset on the N shots, and uploading the fixed offset to a photoetching machine.
And one shot is an exposure unit, N is an integer greater than 1, the number of shots included on the wafer is greater than N, the shot added with the fixed offset is made to be a selected shot, and the shot not added with the fixed offset is made to be an unselected shot.
Thirdly, carrying out second exposure on the wafer by adopting the photomask with the current layer alignment precision mark and combining the optimal complement value obtained during the first exposure and the fixed offset of N selected shots; the second exposure forms a current layer overlay accuracy mark composed of a photoresist pattern on the wafer.
And performing a second measurement to collect overlay accuracy data of the whole wafer.
And step four, performing simulation calculation by using the overlay accuracy measurement values of the unselected shots collected in the second measurement to obtain N overlay accuracy simulation values of the selected shots.
And step five, subtracting the overlay accuracy analog value of each selected shot obtained in the step four from the overlay accuracy measurement value of each selected shot collected in the second measurement to obtain a deviation value of each selected shot, and performing point-to-point comparison and judgment on the accuracy of the overlay accuracy measurement method through the fixed deviation value and the deviation value of each selected shot.
The method for measuring the overlay accuracy comprises the following steps of: an image-based overlay method and a diffraction-based overlay method.
The image-based overlay method is further improved in that the front layer overlay accuracy mark and the current layer overlay accuracy mark form an image-based overlay.
The method is further improved in that the front layer alignment precision mark and the current layer alignment precision mark form diffraction-based alignment in the diffraction-based alignment method.
A further improvement is that steps one to five are completed at the lithography station.
In the second step, the fixed offset is selectively added to N selected shots and uploaded to the photoetching machine through a subroutine (subtreece);
further improvements include the fixed offset values in the X direction and the fixed offset values in the Y direction.
The fixed offset added on each selected shot is the same or different in size.
A further improvement is that the subroutine sets the fixed offset by setting a rotation (intra field rotation) within the exposure field.
The invention can be used for measuring the accuracy of the standard overlay accuracy measurement method by comparing the set fixed offset with the deviation value of the selected shot obtained by measurement and deduction, so that the invention can be realized without adopting CDSEM (code division multiple access) identification, thereby overcoming various defects corresponding to the CDSEM identification, for example, the invention can be used for all layers in common and can be realized without carrying out etching process, and is beneficial to collecting the data of the whole wafer on a large scale, thereby simplifying the process method and improving the test speed.
Drawings
The invention is described in further detail below with reference to the attached drawings and detailed description:
FIG. 1 is a layout of a CDSEM OVLmark used in a conventional method for characterizing the accuracy of an overlay accuracy measurement method;
FIG. 2 is a flow chart of a method for characterizing the accuracy of an overlay accuracy measurement method according to an embodiment of the present invention;
fig. 3A is a schematic diagram of adding a fixed offset to N shots in the second step of the embodiment of the present invention;
FIG. 3B is a schematic diagram of overlay accuracy measurement values of each unselected shot collected in the second measurement according to the embodiment of the present invention;
FIG. 3C is a schematic diagram of the overlay accuracy simulation values of N selected shots obtained by performing simulation calculation in the fourth step in the embodiment of the present invention;
FIG. 3D is a schematic diagram of overlay accuracy measurement values of N selected shots collected in a second measurement according to an embodiment of the present invention;
FIG. 3E is a diagram illustrating the deviation values of the selected shots in step five according to an embodiment of the present invention;
fig. 4A is a diagram showing a specific value distribution of adding fixed offset to N shots in the second step of the embodiment of the present invention;
FIG. 4B is a graph showing a specific value distribution of overlay accuracy measurements for each unselected shot collected during a second measurement according to an embodiment of the present invention;
FIG. 4C is a graph of specific overlay accuracy simulation value distribution of N selected shots obtained by simulation calculation of overlay accuracy measurement values of each unselected shot in FIG. 4B;
FIG. 5A is a fitted curve of the X-direction overlay accuracy of an IBO method obtained by the method of the embodiment of the invention;
FIG. 5B is a fitted curve of the Y-direction overlay accuracy of the IBO method obtained by the method of the embodiment of the invention;
FIG. 5C is a fitted curve of the alignment accuracy of the uDBO method in the X direction obtained by the method of the embodiment of the invention;
fig. 5D is a fitted curve of the Y-direction overlay accuracy of the uDBO method obtained by the method of the embodiment of the present invention.
Detailed Description
FIG. 2 is a flowchart of a method for characterizing accuracy of an overlay accuracy measurement method according to an embodiment of the present invention; in the method for representing the accuracy of the overlay accuracy measurement method, the overlay accuracy measurement method adopts a front layer overlay accuracy mark and a current layer overlay accuracy mark to carry out offset measurement to obtain overlay accuracy data; the method for characterizing the accuracy of the overlay accuracy measurement method comprises the following steps:
step one, providing a wafer with a front layer alignment precision mark, and performing first exposure on the wafer by adopting a photomask with a current layer alignment precision mark, wherein the first exposure can form the current layer alignment precision mark consisting of photoresist patterns on the wafer.
And performing first measurement to collect overlay accuracy data of the whole wafer, obtaining an optimal complement value and reworking the wafer.
And step two, selectively adding fixed offset on the N shots, and uploading the fixed offset to a photoetching machine.
And one shot is an exposure unit, N is an integer greater than 1, the number of shots included on the wafer is greater than N, the shot added with the fixed offset is made to be a selected shot, and the shot not added with the fixed offset is made to be an unselected shot. Fig. 3A is a schematic diagram of adding a fixed offset to N shots in the second step of the embodiment of the present invention; each of the shots is marked with a mark 201. Wherein the mark 202 represents a fixed offset added in each of the selected shots.
In the embodiment of the invention, the fixed offset is selectively added to N selected shots through a subtecipe and uploaded to the photoetching machine;
the fixed offset includes an X-direction fixed offset value and a Y-direction fixed offset value.
The fixed offset added on each selected shot is the same or different in size.
The subroutine sets the fixed offset by setting intra field rotation.
Thirdly, carrying out second exposure on the wafer by adopting the photomask with the current layer alignment precision mark and combining the optimal complement value obtained during the first exposure and the fixed offset of N selected shots; the second exposure forms a current layer overlay accuracy mark composed of a photoresist pattern on the wafer.
And performing a second measurement to collect overlay accuracy data of the whole wafer.
FIG. 3B is a schematic diagram showing overlay accuracy measurement values of each unselected shot collected in the second measurement according to the embodiment of the present invention; the mark 203 corresponds to overlay accuracy measurement values of each unselected shot.
And step four, performing simulation calculation by using the overlay accuracy measurement values of the unselected shots collected in the second measurement to obtain N overlay accuracy simulation values of the selected shots.
Fig. 3C is a schematic diagram of the overlay accuracy analog values of N selected shots obtained by performing a line simulation calculation in the fourth step of the embodiment of the present invention; the mark 204 corresponds to the overlay accuracy analog value of each of the selected shots.
And step five, subtracting the overlay accuracy analog value of each selected shot obtained in the step four from the overlay accuracy measurement value of each selected shot collected in the second measurement to obtain a deviation value of each selected shot, and performing point-to-point comparison and judgment on the accuracy of the overlay accuracy measurement method through the fixed deviation value and the deviation value of each selected shot.
FIG. 3D is a schematic diagram showing overlay accuracy measurement values of N selected shots collected in the second measurement according to the embodiment of the present invention; the mark 205 corresponds to the overlay accuracy measurement value of each of the selected shots.
As shown in fig. 3E, the deviation value of the shot is selected in the fifth step of the embodiment of the present invention; the mark 206 corresponds to the deviation value of each of the selected shots. That is, the overlay accuracy measurement value 205 of each selected shot in fig. 3D is subtracted from the overlay accuracy simulation value 204 of each selected shot in fig. 3C to obtain the deviation value 206 of each selected shot in fig. 3E.
And then, comparing the deviation value 206 of each selected shot in fig. 3E with the fixed offset 202 added in each selected shot in fig. 3A in a point-to-point manner to obtain the accuracy of the overlay accuracy measurement method.
In the embodiment of the invention, the overlay accuracy measuring method comprises the following steps: an image-based overlay method and a diffraction-based overlay method.
In the image-based overlay method, the front layer overlay accuracy mark and the current layer overlay accuracy mark form an image-based overlay.
In the diffraction-based alignment method, the front layer alignment precision mark and the current layer alignment precision mark form diffraction-based alignment.
And step one to step five are completed in the photoetching station.
The embodiment of the invention can be used for comparing the set fixed offset with the deviation value of the selected shot obtained by measurement and deduction to realize the accuracy of the standard overlay accuracy measurement method, so that the embodiment of the invention can be realized without adopting a CDSEM mark, thereby overcoming various defects corresponding to the CDSEM mark, for example, the embodiment of the invention can be used for all layers generally and can be realized without carrying out etching process, and is beneficial to collecting the data of the whole wafer on a large scale, thereby simplifying the process method and improving the test speed.
For a more detailed description of embodiments of the present invention, the following is further described in conjunction with specific parameters:
as shown in fig. 4A, in the second step of the embodiment of the present invention, a specific value distribution diagram of fixed offset is added to N shots; n is shown as 22 in fig. 4A, the fixed offset added over 22 of the selected shots is intra field rotation and is marked with a marker 202 a.
As shown in fig. 4B, a specific value distribution diagram of overlay accuracy measurement values of each unselected shot collected in the second measurement according to the embodiment of the present invention is shown in fig. 4B, where the overlay accuracy measurement values of each unselected shot are marked with a mark 203 a.
As shown in fig. 4C, the overlay accuracy measurement values of the unselected shots in fig. 4B are simulated and calculated to obtain specific value distribution diagrams of overlay accuracy simulation values of the N selected shots; the overlay accuracy analog value of the selected shot is marked with a mark 204 a.
As shown in fig. 5A, a fitted curve 301 of the alignment accuracy in the X direction of the IBO method obtained by the method according to the embodiment of the present invention is shown; the Slope (Slope) of curve 301 is 1.00, R 2 0.99. In fig. 5A, the X-direction overlay accuracy of the IBO method corresponds to the X-direction deviation value of the IBO method, and the X-direction deviation value is the X-direction fixed deviation value of the fixed deviation amount on the ordinate.
As shown in fig. 5B, a fitted curve 302 of the alignment accuracy in the Y direction of the IBO method obtained by the method according to the embodiment of the present invention; slope of curve 302 is 1.01, R 2 0.98. In fig. 5B, the Y-direction overlay accuracy of the IBO method corresponds to the Y-direction deviation value of the IBO method on the abscissa, and the Y-direction value of the fixed offset on the ordinate is the Y-direction fixed offset value.
As shown in FIG. 5C, is a mining methodFitting curve 303 of alignment precision in X direction of uDBO method obtained by the method of the embodiment of the invention; uDBO is one of DBOs. Slope of curve 303 is 1.01, R 2 0.99. In fig. 5C, the X-direction overlay accuracy of the uDBO method on the abscissa corresponds to the X-direction deviation value of the uDBO method, and the ordinate is the X-direction fixed offset value, which is the X-direction value of the fixed offset.
As shown in fig. 5D, a fitted curve 304 of the alignment accuracy of the u dbo method Y direction obtained by the method according to the embodiment of the present invention is shown. Slope of curve 304 is 1.05, R 2 0.98. In fig. 5D, the Y-direction overlay accuracy of the uDBO method on the abscissa corresponds to the Y-direction deviation value of the uDBO method, and the ordinate is the Y-direction value of the fixed offset, that is, the Y-direction fixed offset value.
It can be seen that IBO and uDBO exhibit a good linear relationship with the set point, i.e. the fixed offset. The curve fitting can obtain the accuracy of the corresponding overlay accuracy measurement mode, and the accuracy is obtained from the slope of the curve and R 2 It can be seen that the IBO and ubbo measurements have good accuracy, with IBO being slightly better in the Y direction.
The present invention has been described in detail by way of specific examples, but these should not be construed as limiting the invention. Many variations and modifications may be made by one skilled in the art without departing from the principles of the invention, which is also considered to be within the scope of the invention.
Claims (9)
1. The method for representing the accuracy of the overlay accuracy measurement method is characterized in that the overlay accuracy measurement method adopts a front layer overlay accuracy mark and a current layer overlay accuracy mark to carry out offset measurement to obtain overlay accuracy data; the method for characterizing the accuracy of the overlay accuracy measurement method comprises the following steps:
providing a wafer with a front layer alignment precision mark, and performing first exposure on the wafer by adopting a photomask with a current layer alignment precision mark, wherein the first exposure can form the current layer alignment precision mark consisting of photoresist patterns on the wafer;
performing first measurement to collect overlay accuracy data of the whole wafer to obtain an optimal complement value and reworking the wafer;
step two, selectively adding fixed offset on the N shots, and uploading the fixed offset to a photoetching machine;
one shot is an exposure unit, N is an integer greater than 1, the number of shots included on the wafer is greater than N, the shot added with the fixed offset is made to be a selected shot, and the shot not added with the fixed offset is made to be an unselected shot;
thirdly, carrying out second exposure on the wafer by adopting the photomask with the current layer alignment precision mark and combining the optimal complement value obtained during the first exposure and the fixed offset of N selected shots; the second exposure can form a current layer overlay accuracy mark consisting of a photoresist pattern on the wafer;
performing a second measurement to collect overlay accuracy data of the whole wafer;
step four, performing simulation calculation by using the overlay accuracy measurement values of the unselected shots collected in the second measurement to obtain overlay accuracy simulation values of N selected shots;
and step five, subtracting the overlay accuracy analog value of each selected shot obtained in the step four from the overlay accuracy measurement value of each selected shot collected in the second measurement to obtain a deviation value of each selected shot, and performing point-to-point comparison and judgment on the accuracy of the overlay accuracy measurement method through the fixed deviation value and the deviation value of each selected shot.
2. The method of claim 1, wherein the overlay accuracy measurement method comprises: an image-based overlay method and a diffraction-based overlay method.
3. The method for characterizing accuracy of overlay accuracy measurement as recited in claim 2, wherein: in the image-based overlay method, the front layer overlay accuracy mark and the current layer overlay accuracy mark form an image-based overlay.
4. The method for characterizing accuracy of overlay accuracy measurement as recited in claim 2, wherein: in the diffraction-based alignment method, the front layer alignment precision mark and the current layer alignment precision mark form diffraction-based alignment.
5. The method for characterizing accuracy of overlay accuracy measurement as recited in claim 1, wherein: and step one to step five are completed in the photoetching station.
6. The method for characterizing accuracy of overlay accuracy measurement according to claim 1 or 2, wherein: and step two, selectively adding the fixed offset to the N selected shots through a subroutine, and uploading the fixed offset to the photoetching machine.
7. The method for characterizing overlay accuracy measurement method as recited in claim 6, wherein: the fixed offset includes an X-direction fixed offset value and a Y-direction fixed offset value.
8. The method for characterizing overlay accuracy measurement method as recited in claim 7, wherein: the fixed offset added on each selected shot is the same or different in size.
9. The method for characterizing overlay accuracy measurement method as recited in claim 6, wherein: the subroutine sets the fixed offset in accordance with a requirement to rotate the fixed offset within the exposure area.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060061501A (en) * | 2004-12-02 | 2006-06-08 | 삼성전자주식회사 | Overlay measurement system and method for measuring overlay |
| CN108089412A (en) * | 2017-11-10 | 2018-05-29 | 上海华力微电子有限公司 | Photoetching alignment precision measures the appraisal procedure of accuracy |
| CN109828440A (en) * | 2019-03-26 | 2019-05-31 | 上海华力集成电路制造有限公司 | Alignment mark and overlay error measurement method based on diffraction |
| CN110908256A (en) * | 2019-12-30 | 2020-03-24 | 南京诚芯集成电路技术研究院有限公司 | Photoetching overlay mark design method |
| WO2021047841A1 (en) * | 2019-09-12 | 2021-03-18 | Asml Netherlands B.V. | Determining lithographic matching performance |
-
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- 2022-01-27 CN CN202210097317.6A patent/CN114296325B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060061501A (en) * | 2004-12-02 | 2006-06-08 | 삼성전자주식회사 | Overlay measurement system and method for measuring overlay |
| CN108089412A (en) * | 2017-11-10 | 2018-05-29 | 上海华力微电子有限公司 | Photoetching alignment precision measures the appraisal procedure of accuracy |
| CN109828440A (en) * | 2019-03-26 | 2019-05-31 | 上海华力集成电路制造有限公司 | Alignment mark and overlay error measurement method based on diffraction |
| WO2021047841A1 (en) * | 2019-09-12 | 2021-03-18 | Asml Netherlands B.V. | Determining lithographic matching performance |
| CN110908256A (en) * | 2019-12-30 | 2020-03-24 | 南京诚芯集成电路技术研究院有限公司 | Photoetching overlay mark design method |
Non-Patent Citations (1)
| Title |
|---|
| 基于镜像焦面检测对准标记的套刻性能原位测量技术;施伟杰;王向朝;张冬青;马明英;王帆;;光学学报(第03期);全文 * |
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