CN108074940B - 光传感器和具有该光传感器的显示装置 - Google Patents

光传感器和具有该光传感器的显示装置 Download PDF

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CN108074940B
CN108074940B CN201711097155.1A CN201711097155A CN108074940B CN 108074940 B CN108074940 B CN 108074940B CN 201711097155 A CN201711097155 A CN 201711097155A CN 108074940 B CN108074940 B CN 108074940B
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electrode
gate
semiconductor layer
thin film
film transistor
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CN108074940A (zh
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秋教燮
李根植
韩万协
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LG Display Co Ltd
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Abstract

本文公开了一种光传感器，该光传感器包括：第一薄膜晶体管(TFT),其被配置成将光能转换成电能，该第一TFT具有第一栅电极、第一漏电极和第一源电极；存储电容器，其具有被放置成彼此相对的第一电极和第二电极，并且被配置成将来自第一TFT的电能存储为电荷；以及第二TFT，其被配置成根据控制信号来输出存储在存储电容器中的电荷，该第二TFT具有第一栅电极、第二漏电极和第二源电极，其中，第一TFT的第一栅电极、存储电容器的第一电极和第二TFT的第二栅电极彼此成一体。

Description

光传感器和具有该光传感器的显示装置
相关申请的交叉引用
本公开内容要求于2016年11月9日提交的韩国专利申请第10-2016-0149010号的根据35U.S.C.§119(a)的优先权的权益，出于如同完全阐述的目的，其全部内容通过引用并入本文。
技术领域
本公开内容涉及光传感器和具有该光传感器的显示装置，具体地，涉及使用薄膜晶体管的光传感器和具有该光传感器的显示装置。
背景技术
光传感器是一种根据光的强度存储电荷量作为信息并且根据外部控制信号输出所存储的信息的装置。光传感器广泛用作X射线检测器、扫描仪、数字复印机、指纹识别系统、传真机等中的用于读取字符和图片的图像识别装置。
在下文中，将参照图1和图2来描述使用薄膜晶体管的现有技术的光传感器(在下文中被称为“光传感器”)。
图1是示出了现有技术的光传感器的示例的平面图，图2是沿图1中的线I-I'所截取的截面图。
参照图1和图2，该光传感器包括开关薄膜晶体管(TFT)20、存储电容器30和传感器TFT 40。
传感器TFT 40包括传感器漏电极41、传感器源电极42、传感器栅电极45和传感器半导体层47。传感器栅电极45形成在基板10上，并且传感器半导体层47通过覆盖传感器栅电极45的第一绝缘层51与传感器栅电极45绝缘。传感器漏电极41和传感器源电极42被布置成与半导体层15接触。传感器漏电极41连接至传感器漏极线48，并且传感器栅电极45连接至传感器栅极线46。
开关TFT 20包括开关漏电极21、开关源电极22、开关栅电极25和开关半导体层27。开关栅电极25形成在基板10上，并且开关半导体层27通过覆盖开关栅电极25的第一绝缘层51与开关栅电极25绝缘。开关漏电极21和开关源电极22被布置成与开关半导体层27接触。开关源电极22连接至引出线28，并且开关栅电极25连接至开关栅极线26。引出线28用作数据线，通过该数据线输出存储在存储电容器30中的电荷。
存储电容器30包括通过第一绝缘层51彼此绝缘的第一电容器电极31和第二电容器电极32。如图2所示，第一电容器电极31与传感器栅电极45形成为一体，并且与开关栅电极25分离。第二电容器电极32与传感器源电极42和开关漏电极21形成为一体。
第二绝缘层52堆叠在传感器TFT 40、存储电容器30和开关TFT 20上以覆盖它们。遮光膜29形成在第二绝缘层52上的形成有开关TFT 20的区域中。保护膜53设置在其上形成有遮光膜29的第二绝缘层52上以覆盖遮光膜29。
传感器TFT 40感测输入光以产生电流，并且通过由传感器TFT 40产生的电流将电荷累积在存储电容器30中。存储的电荷通过开关TFT 20的开关操作而输出至引出线28。
在上述光传感器中，第一电容器电极31和传感器栅电极45形成为一体，并且开关栅电极25被形成为与第一电容器电极31和传感器栅电极45分离。在这样的结构中，由于开关栅极线26必须与第一电容器电极31和传感器栅极线46分离地形成，因此，存在以下的一些问题：空间利用率降低，从而降低了光传感器的一体化以及在光传感器应用于显示装置时的开口率(aperture ratio)。
发明内容
本公开内容的目的在于解决上述问题，并且提供一种能够提高一体化的光传感器以及一种能够提高开口率的显示装置。
根据本公开内容的一种光传感器包括：第一薄膜晶体管(TFT)，其被配置成将光能转换成电能，该第一TFT具有第一栅电极、第一漏电极和第一源电极；存储电容器，其具有被放置成彼此相对的第一电极和第二电极，并且被配置成将来自第一TFT的电能存储为电荷；以及第二TFT，其被配置成根据控制信号来输出存储在存储电容器中的电荷，该第二TFT具有第二栅电极、第二漏电极和第二源电极，其中，第一TFT的第一栅电极、存储电容器的第一电极和第二TFT的第二栅电极彼此成一体。
第一TFT是底栅型TFT，其中第一TFT的第一栅电极设置在第一TFT的第一半导体层下方，以及第二TFT是顶栅型TFT，其中第二TFT的第二栅电极设置在第二TFT的第二半导体层上方。
第一TFT的第一半导体层由非晶硅(a-Si)制成，以及第二TFT的第二半导体层由多晶硅(p-Si)制成。
第二TFT包括：第二半导体层，其设置在基板上；第二栅电极，其设置在覆盖第二半导体层的栅极绝缘膜上以与第二半导体层交叠；第二漏电极，其设置在覆盖第二栅电极且具有第一接触孔和第二接触孔的层间绝缘膜上，并且通过第一接触孔连接至第二半导体层的一端，第一接触孔和第二接触孔分别使第二半导体层的两端暴露；以及第二源电极，其设置在层间绝缘膜上并且通过第二接触孔连接至第二半导体层的另一端。
存储电容器包括：第一电极，其设置在栅极绝缘膜上；以及与第一电极相对的第二电极，其中，层间绝缘膜在第一电极与第二电极之间。
第一TFT包括：第一栅电极，其设置在栅极绝缘膜上；第一半导体层，其设置在覆盖第一栅电极的层间绝缘膜上以与第一栅电极交叠；第一漏电极，其设置在具有第三接触孔的层间绝缘膜上，第一漏电极的一端连接至通过第三接触孔暴露的第一栅电极，并且第一漏电极的另一端连接至第一半导体层的一部分；以及第一源电极，其设置在层间绝缘膜上，该第一源电极的一端连接至第一半导体层的另一部分，并且该第一源电极的另一端连接至存储电容器的第二电极。
第一栅电极与存储电容器的第一电极成一体以从第一电极伸出，以及第一源电极与第二漏电极和存储电容器的第二电极成一体以从第二电极伸出。
根据本公开内容的一种显示装置包括：彼此交叉的多条栅极线和多条数据线；以及设置在通过多条栅极线和多条数据线的交叉而限定的区域中的像素；像素中的每一个均包括：显示元件，其被配置成显示图像；以及光传感器，其连接至所述多条栅极线中的至少一条。
根据本公开内容的一种电致发光显示装置包括：彼此交叉的多条栅极线和多条数据线；以及设置在通过多条栅极线和多条数据线的交叉而限定的区域中的像素；像素中的每一个均包括：有机发光二极管；像素单元(cell)驱动单元，其被配置成控制流过有机发光二极管的电流量；以及光传感器，其连接至多条栅极线中的至少一条。
电致发光显示装置还包括：引出线，其连接至第二TFT的源电极并且与数据线交叠。
根据本公开内容的一种液晶显示装置包括：彼此交叉的多条栅极线和多条数据线；以及设置在通过多条栅极线和多条数据线的交叉而限定的区域中的像素；像素中的每一个均包括：像素电极，其被配置成通过连接至栅极线和数据线的第三TFT接收数据电压；公共电极，其被配置成接收公共电压并且与像素电极相对，以根据数据电压与公共电压之间的电压差产生电场；以及光传感器，其连接至多条栅极线中的至少一条。
在根据本公开内容的光传感器和具有该光传感器的显示装置中，构成光传感器的光TFT的光栅电极和构成存储电容器的第一电容器电极与构成光传感器的开关TFT的开关栅电极成一体，而没有与开关栅电极分开。因此，不仅能够提高一体化，而且能够提高开口率。
附图说明
被包括以提供对本发明的进一步理解并且被并入且构成本说明书的一部分的附图示出了本发明的实施例，并且与说明书一起用来解释本发明的原理。在附图中：
图1是示出了现有技术的光传感器的示例的平面图；
图2是沿图1中的线I-I'所截取的截面图；
图3是示出了根据本公开内容的实施例的光传感器的等效电路图；
图4是示出了图3所示的等效电路图的平面图；
图5是沿图4中的线I-I'所截取的截面图；
图6是示出了应用了根据图3的实施例的光传感器的电致发光显示装置的一个像素区的等效电路图；
图7是示出了图6所示的等效电路图中的区域R1的示例的平面图；
图8是沿图7中的线I-I'所截取的截面图；
图9是示出了图6所示的等效电路图中的区域R1的另一示例的平面图；
图10是沿图9中的线I-I'所截取的截面图；
图11是示出了应用了根据图3的实施例的光传感器的液晶显示装置的一个像素区的等效电路图；
图12是示出了图11所示的等效电路图中的区域R2的平面图；以及
图13是沿图12中的线I-I'所截取的截面图。
具体实施方式
在下文中，参照附图来详细描述本公开内容的实施例。在说明书中，相同的附图标记表示相同的元件。在下面的描述中，如果被认为会使本公开内容的实施例变得晦涩难懂，则将省略对已知功能和结构的详细描述。此外，以下描述中使用的元件的名称已通过仅考虑撰写本说明书的便利性而选择，并且可能与实际部件的名称不同。
在下文中，将参照图3至图5来描述根据本公开内容的实施例的光传感器。
图3是示出了根据本公开内容的实施例的光传感器的等效电路图。图4是示出了图3所示的等效电路图的平面图，以及图5是沿图4中的线I-I'所截取的截面图。
参照图3，根据本公开内容的实施例的光传感器包括光TFT PT、存储电容器Cst和开关TFT ST。
光TFT PT包括：光源电极PS，其连接至第一节点n1；光栅电极PG，其连接至与栅极线GL相连的第二节点n2；光漏电极PD，其连接至第二节点n2；以及光半导体层A1，其用于在光漏电极PD与光源电极PS之间将光能转换成电能。栅极线GL、光栅电极PG、光漏电极PD和光源电极PS可以使用具有良好导电性的金属材料来形成。光半导体层A1可以使用在整个波长范围内光吸收系数大以及光电转换效率高的非晶硅(a-Si)来形成。
存储电容器Cst包括连接至第一节点C1的第一电容器电极C1和连接至与栅极线GL相连的第二节点n2的第二电容器电极C2。第二电容器电极C2与第一电容器电极C1相对，其中绝缘膜在第一电容器C1余第二电容器C2之间。第一电容器电极C1和第二电容器电极C2可以使用具有良好导电性的金属材料来形成。
开关TFT ST包括：开关栅电极SG，其连接至第二节点n2；开关漏电极SD，其连接至第一节点n1；开关源电极SS，其连接至引出线RO；以及开关半导体层A2，其用于在开关漏电极SD与开关源电极SS之间根据通过栅极线GL向开关栅电极SG提供的控制信号来控制电流量。可以使用具有良好导电性的金属材料来形成开关栅电极SG、开关漏电极SD、开关源电极SS和引出线RO。可以使用与非晶硅相比能够以高速度和低功率驱动并且能够以小面积获得高效率的氧化物半导体来形成开关半导体层A2。由于多晶硅(p-Si)具有优异的耐火性、防水性、氧化稳定性、低温稳定性和透气性，因此可以使用对制造过程的特性没有损害并且具有良好驱动能力的p-Si来形成开关半导体层A2。
参照图4和图5，本公开内容的光传感器包括光TFT PT、存储电容器Cst和开关TFTST。
开关TFT ST包括：开关半导体层A2，其设置在基板SUB上的开关TFT区域SA上；栅极绝缘膜GI，其覆盖其上设置有开关半导体层A2的基板SUB上的开关半导体层A2；开关栅电极SG，其设置在栅极绝缘膜GI上以与开关半导体层A2交叠；层间绝缘膜ILD，其覆盖栅电极SG并且具有分别使开关半导体层A2的两端暴露的第一接触孔CH1和第二接触孔CH2；开关漏电极SD，其设置在层间绝缘膜ILD上以连接至开关半导体层A2的通过第一接触孔CH1暴露的一端；以及开关源电极SS，其设置在层间绝缘膜ILD上以连接至开关半导体层A2的通过第二接触孔CH2暴露的另一端。开关源电极SS可以连接至与外部处理器连接的引出线RO。
存储电容器Cst包括：第一电容器电极C1，其设置在栅极绝缘膜GI上的电容器区域CA中；以及与第一电容器电极C1相对的第二电容器电极C2，其中层间绝缘膜ILD在第一电容器电极C1与第二电容器电极C2之间。第一电容器电极C1可以与开关栅电极SG和栅极线GL成一体。
光TFT PT包括：光栅电极PG，其设置在栅极绝缘膜GI上的光区域PA中；光半导体层A1，其设置在覆盖光栅电极PG的第一层间绝缘膜ILD上以与光栅电极PG交叠；光漏电极PD，其设置在具有暴露光栅电极PG的一部分的第三接触孔CH3的层间绝缘膜ILD上，光漏电极PD的一端连接至通过第三接触孔CH3暴露的光栅电极PG并且光栅电极PG的另一端连接至光半导体层A1的一部分；以及光源电极PS，其设置在层间绝缘膜ILD上，光源电极PS的一端连接至光半导体层A1的另一部分并且光源电极PS的另一端连接至存储电容器Cst的第二电容器电极C2。
光栅电极PG可以与存储电容器Cst的第一电容器电极C1成一体，并且从第一电容器电极C1伸出。此外，光源电极PS可以与第二电容器电极C2和开关漏电极SD成一体，并且从第二电容器电极C2伸出。即，光TFT PT的第一栅电极、存储电容器C1的第一电极和开关TFTST的第二栅电极形成为一体。在一个实施例中，它们同时由与单一连续层和构件相同的层形成。
在根据本公开内容的实施例的具有上述结构的光传感器中，光TFTPT感测输入光以产生电流，并且存储电容器Cst存储与由光TFT PT产生的电流相对应的电荷。存储电容器Cst中的电荷通过开关TFT ST的开关操作而被输出至引出线RO。也就是说，当诸如手指、笔或瞳孔的对象接近或接触到光传感器时，入射到光传感器上的光量改变，并且通过引出线RO来接收光量的变化。可以识别要接近或接触的对象。因此，根据本公开内容的实施例的光传感器可以应用于用于触摸识别、指纹识别和虹膜识别的各种显示装置和生物测定装置。
在根据本公开内容的实施例的光传感器中，光TFT PT的光栅电极PG和存储电容器Cst的第一电容器电极C1与开关TFT ST的开关栅电极SG成一体，而不与开关栅电极SG分开。因此，如果将光传感器应用于显示装置，则不仅能够提高一体化，而且能够提高显示装置的开口率。
在下文中，将描述将根据本公开内容的实施例的光传感器应用于显示装置的示例。
首先，将参照图6至图8来描述应用了根据本公开内容的实施例的光传感器的电致发光显示装置。在图6至图8中，为了防止本公开内容的本质变得晦涩难懂并且防止描述变得复杂，将主要描述应用了根据本公开内容的实施例的光传感器的电致发光显示装置的像素区。在图6至图8的示例中，像素区的除了光传感器以外的结构不限于所示的示例，并且在本公开内容的提交日之前提交的像素区的所有结构应当被理解为包括在本公开内容中。
图6是示出了应用了根据图3的实施例的光传感器的电致发光显示装置的一个像素区的等效电路图。图7是示出了图6所示的等效电路图中的区域R1的示例的平面图，以及图8是沿图7中的线I-I'所截取的截面图。
包括根据本公开内容的实施例的光传感器的电致发光显示装置包括彼此交叉的多条数据线DL和多条栅极线GL以及在交叉区域中以矩阵形式布置的多个像素。每个像素均包括光传感器PSR、像素单元驱动单元和有机发光二极管OLED。
光传感器PSR包括光TFT PT、第一存储电容器Cst1和第一开关TFTST1。
光TFT PT包括：光源电极PS，其连接至第一节点n1；光栅电极PG，其连接至与栅极线GL相连的第二节点n2；光漏电极PD，其连接至第二节点n2；以及光半导体层A1，其用于在光漏电极PD与光源电极PS之间将光能转换成电能。可以使用具有良好导电性的金属材料来形成栅极线GL、光栅电极PG、光漏电极PD和光源电极PS。可以使用在整个波长范围内光吸收系数大以及光电转换效率高的非晶硅(a-Si)来形成光半导体层A1。
第一存储电容器Cst1包括连接至第一节点C1的第一电容器电极C1和连接至与栅极线GL相连的第二节点n2的第二电容器电极C2。第二电容器电极C2与第一电容器电极C1相对，其中绝缘膜在第二电容器电极C2与第一电容器电极C1之间。可以使用具有良好导电性的金属材料来形成第一电容器电极C1和第二电容器电极C2。
第一开关TFT ST1包括：第一开关栅电极SG1，其连接至第二节点n2；第一开关漏电极SD1，其连接至第一节点n1；第一开关源电极SS1，其连接至引出线RO；以及第一开关半导体层A2，其用于在第一开关漏电极SD1与第一开关源电极SS1之间根据通过栅极线GL提供给第一开关栅电极SG1的控制信号来控制电流量。可以使用具有良好导电性的金属材料来形成第一开关栅电极SG1、第一开关漏电极SD1、第一开关源电极SS1和引出线RO。可以使用与非晶硅相比能够以高速度和低功率驱动并且能够以小面积获得高效率的氧化物半导体来形成第一开关半导体层A2。由于多晶硅(p-Si)具有优异的耐火性、防水性、氧化稳定性、低温稳定性和透气性，因此，可以使用对制造过程的特性没有损害并且具有良好驱动能力的p-Si来形成第一开关半导体层A2。
像素单元驱动单元包括：驱动TFT DT，其用于控制流过有机发光二极管OLED的电流量；至少一个第二开关TFT ST2；以及至少一个第二存储电容器Cst2。在下面的描述中，像素单元驱动单元包括具有一个驱动TFT DT、一个第二开关TFT ST2和一个第二存储电容器Cst2的2T1C结构(两个TFT和一个存储电容器)。然而，本公开内容不限于此，并且像素单元驱动单元可以使用包括3T1C、4T2C等在内的各种现有结构。
第二开关TFT ST2响应于来自栅极线GL的扫描信号而导通，从而将来自数据线DL的数据电压施加至第二存储电容器Cst2的一个电极。
驱动TFT DT根据在第二存储电容器Cst2中充电的电压的大小来控制提供给有机发光二极管OLED的电流量，以调节从有机发光二极管OLED发射的光量。从有机发光二极管OLED发射的光量与从驱动TFTDT提供的电流量成比例。
每个像素连接至高电位电源VDD和低电位电源VSS，并且从电力产生单元(未示出)接收高电位电压和低电位电压。
第二开关TFT ST2和驱动TFT DT可以被实现为p型或n型。此外，构成每个像素的TFT的半导体层可以包括非晶硅、多晶硅或氧化物。有机发光二极管OLED包括阳极、阴极和介于阳极与阴极之间的有机发光层。阳极连接至驱动TFT DT。有机发光层可以包括发射层(EML)、设置在发射层的一个表面的空穴注入层(HIL)和空穴传输层(HTL)、以及设置在发射层的另一表面的电子传输层(ETL)和电子注入层(EIL)。
在根据本公开内容的实施例的电致发光显示装置中，第二开关TFTST2在扫描脉冲被提供给栅极线GL时导通，并且将被提供给数据线DL的数据信号提供给第二存储电容器Cst2和驱动TFT DT的栅电极。响应于提供给栅电极的数据信号，驱动TFT DT通过控制从高电位电源VDD向有机发光二极管OLED提供的电流I来控制从有机发光二极管OLED发射的光量。即使第一开关薄膜晶体管ST1截止，驱动TFT DT仍能通过在第二存储电容器Cst2中充电的电压来提供恒定电流I。因此，可以保持有机发光二极管OLED的发光，直到提供下一帧的数据信号。
光传感器PSR的光TFT PT感测输入光以产生电流，并且通过由光TFT PT产生的电流将电荷累积到第一存储电容器Cst1。所累积的电荷通过第一开关TFT(ST1)的开关操作而输出至引出线RO。也就是说，当诸如手指、笔或瞳孔的对象接近或接触到光传感器时，入射到光传感器上的光量变化，并且通过引出线RO来接收光量的变化。可以识别要接近或接触的对象。
参照图7和图8，本公开内容的电致发光显示装置的区域R1包括光传感器PSR的光TFT PT、第一存储电容器Cst1以及像素单元驱动单元的第一开关TFT ST1和第二开关TFTST2。
光传感器PSR的第一开关TFT ST1包括：第一开关半导体层A2，其设置在基板SUB上；第一开关栅电极SG1，其设置在覆盖第一开关半导体层A2的栅极绝缘膜GI上以与第一开关半导体层A2交叠；第一开关漏电极SD1，其设置在层间绝缘膜ILD上以连接至第一开关半导体层A2的通过第一接触孔CH1暴露的一端；以及第一开关源电极SS1，其设置在层间绝缘膜ILD上以连接至第一开关半导体层A2的通过层间绝缘膜ILD的第二接触孔CH2暴露的另一端。第一开关源电极SS1可以连接至与外部处理器连接的引出线RO。
光传感器PSR的光TFT PT包括：光栅电极PG，其设置在栅极绝缘膜GI上的光区域PA中；光半导体层A1，其设置在覆盖光栅电极PG的层间绝缘膜ILD上以与光栅电极PG交叠；光漏电极PD，其设置在具有暴露光栅电极PG的一部分的第三接触孔CH3的层间绝缘膜ILD上，其中光漏电极PD的一端连接至通过第三接触孔CH3暴露的光栅电极PG。并且光漏电极PD的另一端连接至光半导体层A1的一部分；以及光源电极PS，其设置在层间绝缘膜ILD上，其中光源电极PS的一端连接至光半导体层A1的另一部分并且光源电极PS的另一端连接至第一存储电容器Cst1的第二电容器电极C2。
光栅电极PG可以与存储电容器Cst的第一电容器电极C1成一体，并且从第一电容器电极C1伸出。此外，光源电极PS可以与第二电容器电极C2成一体，并且从第一存储电容器Cst1的第二电容器电极C2伸出。
光传感器PSR的第一存储电容器Cst1包括设置在栅极绝缘膜GI上的电容器区域中的第一电容器电极C1和与第一电容器电极C1相对的第二电容器电极C2，其中层间绝缘膜ILD在第一电容器电极C1与第二电容器电极C2之间。第一电容器电极C1可以与光栅电极PG和栅极线GL成一体。
像素单元驱动单元的第二开关TFT ST2包括：第二开关半导体层A3，其设置在基板SUB上；第二开关栅电极SG2，其设置在覆盖第二开关半导体层A3的栅极绝缘膜GI上以与第二开关半导体层A3交叠；第二开关漏电极SD2，其设置在覆盖第二栅电极SG2并且具有使第二开关半导体层A3的两端暴露的第四接触孔CH4和第五接触孔CH5的层间绝缘膜ILD上，以连接至第二开关半导体层A3的通过第四接触孔CH4暴露的一端；第二开关源电极SS2，其设置在层间绝缘膜ILD上以连接至第二开关半导体层A3的通过第五接触孔CH5暴露的另一端。
有机发光二极管OLED的阳极ANO设置在覆盖第二开关源电极SS2和第二开关漏电极SD2的钝化膜PAS上，并且连接至通过钝化膜PAS的第六接触孔CH6暴露的第二开关源电极SS2。
接下来，将参照图9和图10来描述根据图6的实施例的电致发光显示装置的另一示例。
图9是示出了图6所示的等效电路图中的区域R1的另一示例的平面图，以及图10是沿图9中的线I-I'所截取的截面图。
参照图9和图10，除了电致发光显示装置的另一示例中的引出线RO设置在钝化膜PAS上并且通过穿过钝化膜PAS的第七接触孔CH7连接至第一开关源电极SS1以外，电致发光显示装置的另一示例与图7和图8所示的示例相同。因此，为了避免冗余描述，将省略进一步的说明。
在根据图9和图10所示的实施例的电致发光显示装置中，数据线DL设置在层间绝缘膜ILD上，引出线RO设置在数据线DL上，使得引出线RO和数据线DL设置在不同层上。因此，如果引出线RO和数据线DL被设置成彼此交叠，则与根据图7和图8所示的实施例的电致发光显示装置相比，能够增大开口率。
接下来，将参照图11至图13来描述应用了根据本公开内容的实施例的光传感器的液晶显示装置。
在图11至图13中，为了防止本公开内容的本质变得晦涩难懂并且防止描述变得复杂，将主要描述应用了根据本公开内容的实施例的光传感器的液晶显示装置的像素区。在图11至图13的示例中，像素区的除了光传感器以外的结构不限于所示的示例，并且在本公开内容的提交日之前提交的像素区的所有结构应当被理解为包括在本公开内容中。
图11是示出了应用了根据图3的实施例的光传感器的液晶显示装置的一个像素区的等效电路图。图12是示出了图11所示的等效电路图中的区域R2的平面图，以及图13是沿图12中的线I-I'所截取的截面图。
具有根据本公开内容的实施例的光传感器的液晶显示装置包括彼此相对的第一基板和第二基板、设置在第一基板与第二基板之间的液晶层以及设置在第一基板上的像素阵列。像素阵列包括彼此交叉的多条数据线DL和多条栅极线GL以及在交叉区域中以矩阵形式布置的多个像素。每个像素均包括光传感器PSR和显示元件。
参照图11至图13，光传感器PSR包括光TFT PT、第一存储电容器Cst1和第一开关TFT ST1。
光TFT PT包括：光源电极PS，其连接至第一节点n1；光栅电极PG，其连接至与栅极线GL相连的第二节点n2；光漏电极PD，其连接至第二节点n2；以及光半导体层A1，其用于在光漏电极PD与光源电极PS之间将光能转换成电能。可以使用具有良好导电性的金属材料来形成栅极线GL、光栅电极PG、光漏电极PD和光源电极PS。可以使用在整个波长范围内光吸收系数大以及光电转换效率高的非晶硅(a-Si)来形成光半导体层A1。
第一存储电容器Cst1包括连接至第一节点C1的第一电容器电极C1以及连接至与栅极线GL相连的第二节点n2的第二电容器电极C2。第二电容器电极C2与第一电容器电极C1相对，其中绝缘膜在第二电容器电极C2与第一电容器电极C1之间。可以使用具有良好导电性的金属材料来形成第一电容器电极C1和第二电容器电极C2。
第一开关TFT ST1包括：第一开关栅电极SG1，其连接至第二节点n2；第一开关漏电极SD1，其连接至第一节点n1；第一开关源电极SS1，其连接至引出线RO；以及第一开关半导体层A2，其用于在第一开关漏电极SD1与第一开关源电极SS1之间根据通过栅极线GL提供给第一开关栅电极SG1的控制信号来控制电流量。可以使用具有良好导电性的金属材料来形成第一开关栅电极SG1、第一开关漏电极SD1、第一开关源电极SS1和引出线RO。可以使用与非晶硅相比能够以高速度和低功率驱动并且能够以小面积获得高效率的氧化物半导体来形成第一开关半导体层A2。由于多晶硅(p-Si)具有优异的耐火性、防水性、氧化稳定性、低温稳定性和透气性，因此可以使用对制造过程的特性没有损害并且具有良好驱动能力的p-Si来形成第一开关半导体层A2。
显示元件包括：彼此交叉的栅极线GL和数据线DL；第二开关TFTST2，其连接至栅极线GL和数据线DL；像素电极Px，其连接至第二开关TFT ST2；被施加公共电压的与像素电极Px相对的公共电极COM，其中，绝缘层介于像素电极Px与公共电极COM之间；以及通过使像素电极Px与公共电极COM交叠而形成的第二存储电容器Cst2。
在根据本公开内容的实施例的液晶显示装置中，通过使用被施加电压Vcom的公共电极COM与通过第二开关TFT ST2对数据电压充电的像素电极Px之间的电压差来驱动液晶从而调整透光量，像素阵列的显示元件可以显示图像。
光传感器PSR的光TFT PT感测输入光以产生电流，并且通过由光TFT PT产生的电流将电荷累积到第一存储电容器Cst1。所累积的电荷通过第一开关TFT ST1的开关操作而输出至引出线RO。也就是说，当诸如手指、笔或瞳孔的对象接近或接触到光传感器时，入射到光传感器上的光量变化，并且通过引出线RO来接收光量的变化。可以识别要接近或接触的对象。
参照图12和图13，本公开内容的液晶显示装置的区域R2包括光传感器PSR的光TFTPT、第一存储电容器Cst1以及显示元件的第一开关TFT ST1和第二开关TFT ST2。
光传感器PSR的第一开关TFT ST1包括：第一开关半导体层A2，其设置在基板SUB上；第一开关栅电极SG1，其设置在覆盖第一开关半导体层A2的栅极绝缘膜GI上以与第一开关半导体层A2交叠；第一开关漏电极SD1，其设置在层间绝缘膜ILD上以连接至第一开关半导体层A2的通过层间绝缘膜ILD的第一接触孔CH1暴露的一端；以及第一开关源电极SS1，其设置在层间绝缘膜ILD上以连接至第一开关半导体层A2的通过层间绝缘膜ILD的第二接触孔CH2暴露的另一端。第一开关源电极SS1可以连接至与外部处理器连接的引出线RO。
光传感器PSR的光TFT PT包括：光栅电极PG，其设置在栅极绝缘膜GI上的光区域中；光半导体层A1，其设置在覆盖光栅电极PG的层间绝缘膜ILD上以与光栅电极PG交叠；以及光漏电极PD，其设置在具有暴露光栅电极PG的一部分的第三接触孔CH3的层间绝缘膜ILD上，其中光漏电极PD的一端连接至通过第三接触孔CH3暴露的光栅电极PG，而光漏电极PD的另一端连接至光半导体层A1的一部分。
光栅电极PG可以与存储电容器Cst的第一电容器电极C1成一体，并且从第一电容器电极C1伸出。此外，光源电极PS可以与第二电容器电极C2成一体，并且从第二电容器电极C2伸出。
光传感器PSR的第一存储电容器Cst 1包括设置在栅极绝缘膜GI上的电容器区域中的第一电容器电极C1和与第一电容器电极C1相对的第二电容器电极C2，其中层间绝缘膜ILD在第一电容器电极C1与第二电容器电极C2之间。第一电容器电极C1可以与光栅电极PG和栅极线GL成一体。
显示元件的第二开关TFT ST2包括：第二开关半导体层A3，其设置在基板SUB上；第二开关栅电极SG2，其设置在覆盖第二开关半导体层A3的栅极绝缘膜GI上以与第二开关半导体层A3交叠；第二开关漏电极SD2，其设置在覆盖第二栅电极SG2并且具有使第二开关半导体层A3的两端暴露的第四接触孔CH4和第五接触孔CH5的层间绝缘膜ILD上，以连接至第二开关半导体层A3的通过第四接触孔CH4暴露的一端；以及第二开关源电极SS2，其设置在层间绝缘膜ILD上以连接至第二开关半导体层A3的通过第五接触孔CH5暴露的另一端。
显示元件的像素电极Px设置在覆盖第二开关源电极SS2和第二漏电极SD2的第一钝化膜PAS1上，并且通过穿过第一钝化膜PAS1的第六接触孔CH6连接至第二开关源电极SS2。
具有多个开口的公共电极COM设置在覆盖像素电极Px的第二钝化膜PAS2上以与像素电极Px交叠，其中第二钝化膜PAS2在公共电极COM与像素电极Px之间。
根据光传感器以及具有该光传感器的有机发光显示装置和液晶显示装置，构成光传感器的光TFT PT的光栅电极PG和存储电容器Cst的第一电极C1与开关TFT ST的开关栅电极SG成一体，而不与开关栅电极SG分开。因此，不仅能够提高一体化，而且能够提高显示装置的开口率。根据具有本公开内容的光学图像传感器的显示装置，用于容纳光源的第一PCB可以与其上安装有显示装置的驱动电路的第二PCB设置在同一侧，使得第一PCB和第二PCB能够容易地连接，从而改善第一PCB与第二PCB之间的连接性。
本领域技术人员将理解，在不背离通过前述内容描述的本公开内容的技术精神的情况下，可以以各种方式来改变和修改本公开内容。例如，在描述本公开内容的实施例中，电致发光显示装置和液晶显示装置作为应用了光传感器的示例而被提供，但是本公开的发明不限于此。光传感器可以应用于诸如场发射显示器(FED)和等离子显示面板(PDP)的显示装置以及生物识别装置中。因此，本公开内容的技术范围不限于说明书的具体实施方式部分中所描述的内容，而是应当由权利要求来确定。

Claims (11)

1.一种光传感器，包括：
第一薄膜晶体管，其被配置成将光能转换成电能，所述第一薄膜晶体管具有第一栅电极、第一漏电极和第一源电极；
存储电容器，其具有被放置成彼此相对的第一电极和第二电极，并且被配置成将来自所述第一薄膜晶体管的电能存储为电荷；以及
第二薄膜晶体管，其被配置成根据控制信号来输出存储在所述存储电容器中的电荷，所述第二薄膜晶体管具有第二栅电极、第二漏电极和第二源电极，
其中，所述第一薄膜晶体管的所述第一栅电极、所述存储电容器的所述第一电极和所述第二薄膜晶体管的所述第二栅电极彼此成一体。
2.根据权利要求1所述的光传感器，其中，所述第一薄膜晶体管是底栅型薄膜晶体管，其中所述第一薄膜晶体管的所述第一栅电极设置在所述第一薄膜晶体管的第一半导体层下方，以及所述第二薄膜晶体管是顶栅型薄膜晶体管，其中所述第二薄膜晶体管的所述第二栅电极设置在所述第二薄膜晶体管的第二半导体层上方。
3.根据权利要求2所述的光传感器，其中，所述第一薄膜晶体管的所述第一半导体层由非晶硅a-Si制成，以及所述第二薄膜晶体管的所述第二半导体层由多晶硅p-Si制成。
4.根据权利要求1所述的光传感器，其中，所述第二薄膜晶体管包括：
第二半导体层，其设置在基板上；
所述第二栅电极，其设置在覆盖所述第二半导体层的栅极绝缘膜上以与所述第二半导体层交叠；
所述第二漏电极，其设置在覆盖所述第二栅电极且具有第一接触孔和第二接触孔的层间绝缘膜上，并且通过所述第一接触孔连接至所述第二半导体层的一端，所述第一接触孔和所述第二接触孔分别使所述第二半导体层的两端暴露；以及
所述第二源电极，其设置在所述层间绝缘膜上并且通过所述第二接触孔连接至所述第二半导体层的另一端。
5.根据权利要求4所述的光传感器，其中，所述存储电容器包括：
所述第一电极，其设置在所述栅极绝缘膜上；以及
与所述第一电极相对的所述第二电极，其中，所述层间绝缘膜在所述第一电极与所述第二电极之间。
6.根据权利要求5所述的光传感器，其中，所述第一薄膜晶体管包括：
所述第一栅电极，其设置在所述栅极绝缘膜上；
第一半导体层，其设置在覆盖所述第一栅电极的所述层间绝缘膜上以与所述第一栅电极交叠；
所述第一漏电极，其设置在具有第三接触孔的所述层间绝缘膜上，所述第一漏电极的一端连接至通过所述第三接触孔暴露的所述第一栅电极，并且所述第一漏电极的另一端连接至所述第一半导体层的一部分；以及
所述第一源电极，其设置在所述层间绝缘膜上，所述第一源电极的一端连接至所述第一半导体层的另一部分，并且所述第一源电极的另一端连接至所述存储电容器的所述第二电极。
7.根据权利要求6所述的光传感器，其中，所述第一栅电极与所述存储电容器的所述第一电极成一体以从所述第一电极伸出，以及所述第一源电极与所述第二漏电极和所述存储电容器的所述第二电极成一体以从所述第二电极伸出。
8.一种显示装置，包括：
彼此交叉的多条栅极线和多条数据线；以及
设置在通过所述多条栅极线和所述多条数据线的交叉而限定的区域中的像素；
所述像素中的每一个均包括：
显示元件，其被配置成显示图像；以及
根据权利要求1至7中之一所述的光传感器，其连接至所述多条栅极线中的至少一条。
9.一种电致发光显示装置，包括：
彼此交叉的多条栅极线和多条数据线；以及
设置在通过所述多条栅极线和所述多条数据线的交叉而限定的区域中的像素；
所述像素中的每一个均包括：
有机发光二极管；
像素单元驱动单元，其被配置成控制流过所述有机发光二极管的电流量；以及
根据权利要求1至7中之一所述的光传感器，其连接至所述多条栅极线中的至少一条。
10.根据权利要求9所述的电致发光显示装置，还包括引出线，所述引出线连接至所述第二薄膜晶体管的源电极并且与所述数据线交叠。
11.一种液晶显示装置，包括：
彼此交叉的多条栅极线和多条数据线；以及
设置在通过所述多条栅极线和所述多条数据线的交叉而限定的区域中的像素；
所述像素中的每一个均包括：
像素电极，其被配置成通过连接至所述栅极线和所述数据线的第三薄膜晶体管接收数据电压；
公共电极，其被配置成接收公共电压并且与所述像素电极相对，以根据所述数据电压与所述公共电压之间的电压差产生电场；以及
根据权利要求1至7中之一所述的光传感器，其连接至所述多条栅极线中的至少一条。
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