CN108054198B - Fast recovery diode and manufacturing method thereof - Google Patents
Fast recovery diode and manufacturing method thereof Download PDFInfo
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- 238000011084 recovery Methods 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 116
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 30
- 238000009792 diffusion process Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005224 laser annealing Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 description 11
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention provides a fast recovery diode and a manufacturing method thereof. The fast recovery diode comprises an N-type epitaxial layer, a fast recovery diode front structure formed on a first surface of the N-type epitaxial layer, a first groove and a second groove formed on a second surface of the N-type epitaxial layer, which is far away from the front structure of the fast recovery diode, a platinum material layer formed on the surfaces of the first groove and the second groove, and a metal layer formed on the surfaces of the N-type epitaxial layer and the platinum material layer, wherein the metal layer is used as a back electrode.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of semiconductor device manufacturing, in particular to a fast recovery diode and a manufacturing method thereof.
[ background of the invention ]
The main circuit in modern power electronic circuit adopts either a thyristor switched off by current conversion or a novel power electronic device with self-turn-off capability, such as GTO, MOSFET, IGBT, etc., and needs a fast power recovery diode connected in parallel with it to reduce the charging time of the main switching device capacitor by the reactive current in the load, and at the same time, to suppress the high voltage induced by the parasitic inductance when the load current is instantaneously reversed. In recent years, with the continuous progress of the manufacturing technology of power semiconductor devices, the design and manufacture of novel power semiconductor devices such as VDMOS and IGBT, which are main switching devices in power electronic circuits, have made great progress, and the frequency performance has been continuously improved, which puts higher requirements on fast recovery power diodes used in cooperation with the fast recovery power semiconductor devices. Therefore, the diode must have a short reverse recovery time and excellent overall performance. Fast recovery diodes with P-i-N structures are the first choice devices for high voltage applications with high withstand voltage and high switching speed.
To increase the reverse recovery speed of the diode, it is necessary to reduce the minority carrier lifetime of the drift region. At present, three methods, namely gold diffusion, platinum diffusion or electron irradiation, are commonly used, defects are formed in a drift region of the diode, and therefore the minority carrier lifetime of the drift region is reduced. Since minority carrier lifetime is reduced by forming defects, defects also increase the forward voltage drop of the device. The long-term reliability of electron irradiation is poor, and the gold diffusion leakage current is too large. Platinum diffusion has low leakage but high on-state voltage and poor reliability (defects and mobile charges are introduced during the platinum diffusion process). The currently commonly used platinum diffusion method is as follows: 1. preparing a platinum material with a certain thickness on the front side or the back side of the device after the front side structure of the device is completed, and then annealing to enable the platinum material to enter the silicon wafer through a diffusion method; 2. and after the platinum material is diffused, cleaning, and preparing a back metal layer on the back of the device. However, in the defect concentration distribution of the device formed by the method, minority carriers are mainly generated in the drift region, so that only the platinum material in the drift region contributes to reducing recombination time, and the platinum material at the rest position can generate defects in the device, thereby increasing the voltage drop of the device and reducing the performance of the device. Meanwhile, in the diffusion process of the platinum material, a large amount of movable charges can also enter the device body, and the movable charges can increase the electric leakage of the product, increase the switching loss and influence the reliability of the product.
[ summary of the invention ]
Aiming at the defects of the existing method, the fast recovery diode and the manufacturing method thereof are provided, and the defect density distribution of the fast recovery diode can be improved.
A fast recovery diode comprises an N-type epitaxial layer, a fast recovery diode front structure formed on a first surface of the N-type epitaxial layer, a first groove and a second groove formed on a second surface, far away from the front structure of the fast recovery diode, of the N-type epitaxial layer, a platinum material layer formed on the surfaces of the first groove and the second groove, and a metal layer formed on the surfaces of the N-type epitaxial layer and the platinum material layer, wherein the metal layer is used as a back electrode.
In one embodiment, the trench width of the portion of the first trench distal from the fast recovery diode front structure is greater than the first trench width of the portion proximal to the fast recovery diode front structure.
In one embodiment, the trench width of the portion of the second trench distal from the fast recovery diode front structure is greater than the second trench width of the portion proximal to the fast recovery diode front structure.
In one embodiment, the platinum material layer in the first trench is integrated with the platinum material layer in the second trench.
In one embodiment, the first groove and the second groove are arranged axisymmetrically.
A method for manufacturing a fast recovery diode comprises the following steps:
providing an N-type substrate, forming an N-type epitaxial layer on the N-type substrate, and forming a front structure of a fast recovery diode on the surface of the N-type epitaxial layer far away from the N-type substrate;
performing back thinning treatment to remove the N-type substrate, and forming a first silicon oxide layer on the surface of the N-type epitaxial layer far away from the front structure of the fast recovery diode;
forming photoresist on the surface of the first silicon oxide layer, and forming a first opening and a second opening which penetrate through the photoresist;
etching the first silicon oxide layer by using photoresist as a mask to form a third opening which penetrates through the first silicon oxide layer and corresponds to the first opening and a fourth opening which corresponds to the second opening; etching the N-type epitaxial layer by using the first, second, third and fourth openings as windows, thereby forming a first groove corresponding to the first and third openings and a second groove corresponding to the second and fourth openings on the surface of the N-type epitaxial layer;
removing the photoresist;
forming platinum material layers on the surfaces of the two grooves, performing first laser annealing and platinum diffusion on the sides of the platinum material layers, and then performing thermal oxidation to form a second silicon oxide layer on the surfaces of the platinum material layers, wherein the second silicon oxide layer and the rest first silicon oxide layer are connected to form a whole silicon oxide layer; and
and forming a metal layer on the surface of the silicon oxide layer, wherein the metal layer is used as a back electrode.
In one embodiment, the width of the third opening is greater than the width of the first opening, and the width of the fourth opening is greater than the width of the second opening.
In one embodiment, the width of the trench of the portion of the first trench away from the fast recovery diode front structure is equal to the width of the third opening, and the width of the portion of the first trench adjacent to the fast recovery diode front structure is equal to the width of the first opening; the width of the groove of the part of the second groove far away from the front structure of the fast recovery diode is equal to the width of the fourth opening, and the width of the part of the second groove near the front structure of the fast recovery diode is equal to the width of the second opening.
In one embodiment, the method further comprises the steps of: and carrying out second laser annealing on one side of the silicon oxide layer to further diffuse the platinum material layer, so that the platinum material layers of the two grooves are connected into a whole.
In one embodiment, the first groove and the second groove are arranged axisymmetrically.
The invention provides a fast recovery diode with short reverse recovery time and excellent comprehensive performance. Then forming a special diffusion window on the back of the device, then performing low-temperature platinum diffusion, and performing laser annealing on the back after diffusion to diffuse platinum to the epitaxial region without influencing the front structure of the device. The platinum material defect formed by the method has large concentration of the platinum material in a drift region determining reverse recovery time and minimum minority carrier lifetime; and in the area with little influence on the reverse recovery, the concentration of the platinum material is relatively low, and the forward voltage drop of the device is reduced. The principle of the manufacturing method of the fast recovery diode is that the minority carrier lifetime near the drift region is lower by adjusting the concentration distribution of the platinum material, the minority carrier lifetime far away from the drift region is still kept higher, and the contradiction between the reverse recovery time and the on-state voltage drop is coordinated.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive efforts, wherein:
fig. 1 is a flow chart of a method of fabricating a fast recovery diode according to the present invention.
Fig. 2-10 are schematic structural diagrams of steps of the manufacturing method shown in fig. 1.
[ description of main element symbols ]
Steps S1-S9; a first opening 101; a second opening 102; a third opening 103; a fourth opening 104; a first trench 105; a second trench 106;
[ detailed description ] embodiments
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a manufacturing method of a fast recovery diode, aiming at solving the technical problems that the defect concentration distribution of the fast recovery diode formed by the existing method is not ideal, so that the voltage drop of a device is increased and the performance of the device is reduced. Referring to fig. 1-10, fig. 1 is a flow chart of a method for fabricating a fast recovery diode according to the present invention, and fig. 2-10 are schematic structural diagrams of steps of the method shown in fig. 1. The manufacturing method of the fast recovery diode comprises the following steps S1-S9.
Step S1, referring to fig. 2, an N-type substrate is provided, an N-type epitaxial layer (i.e., the N-type Epi shown in fig. 2-10) is formed on the N-type substrate, and a fast recovery diode front structure is formed on a surface of the N-type epitaxial layer away from the N-type substrate.
In step S2, referring to fig. 3, a back thinning process is performed to remove the N-type substrate, and a first silicon oxide layer SiO2 is formed on the surface of the N-type epitaxial layer away from the front structure of the fast recovery diode.
In step S3, referring to fig. 4, a photoresist is formed on the surface of the first silicon oxide layer SiO2, and a first opening 101 and a second opening 102 penetrating through the photoresist are formed. In this embodiment, the first opening 101 and the second opening 102 have the same width.
In step S4, referring to fig. 5, the first silicon oxide layer is etched using a photoresist as a mask to form a third opening 103 penetrating through the first silicon oxide layer SiO2 and corresponding to the first opening 101 and a fourth opening 104 corresponding to the second opening 102. Specifically, in step S4, the etching may be wet etching. In this embodiment, the width of the third opening 103 is greater than the width of the first opening 101, and the width of the fourth opening 104 is greater than the width of the second opening 102.
In step S5, referring to fig. 6, the first, second, third and fourth openings 101, 102, 103 and 104 are used as windows to etch the N-type epitaxial layer, so as to form a first trench 105 corresponding to the first and third openings 101 and 103 and a second trench 106 corresponding to the second and fourth openings 102 and 104 on the surface of the N-type epitaxial layer. Specifically, in step S5, the etching may be dry etching. The groove width of the part of the first groove 105 far away from the fast recovery diode front structure is equal to the width of the third opening 103, and the width of the part of the first groove 101 near the fast recovery diode front structure is equal to the width of the first opening 101; the trench width of the portion of the second trench 106 away from the fast recovery diode front side structure is equal to the width of the fourth opening 104, and the width of the portion of the second trench 106 adjacent to the fast recovery diode front side structure is equal to the width of the second opening 102. The first groove 105 and the second groove 106 are arranged axisymmetrically.
In step S6, please refer to fig. 7, the photoresist is removed.
In step S7, referring to fig. 8, a platinum material layer Pt is formed on the surfaces of the two trenches 105 and 106, and a first laser annealing and platinum diffusion are performed on the side of the platinum material layer Pt, and then thermal oxidation is performed, so that a second silicon oxide layer SiO2 'is formed on the surface of the platinum material layer Pt, and the second silicon oxide layer SiO 2' is connected with the remaining first silicon oxide layer SiO2 to form a whole silicon oxide layer.
In step S8, referring to fig. 9, a second laser annealing is performed on one side of the silicon oxide layer, so that the platinum material layer Pt is further diffused, and the platinum material layers Pt of the two trenches 105 and 106 are connected together.
In step S9, referring to fig. 10, a metal layer is formed on the surface of the silicon oxide layer, and the metal layer is used as a back electrode, thereby completing the manufacture of the fast recovery diode 100.
Further, as shown in fig. 10, the fast recovery diode 100 obtained in steps S1-S9 includes an N-type epitaxial layer (i.e., N-type Epi), a fast recovery diode front structure formed on a first surface of the N-type epitaxial layer, a first trench 105 and a second trench 106 formed on a second surface of the N-type epitaxial layer away from the fast recovery diode front structure, a platinum material layer Pt formed on surfaces of the first trench and the second trench, and a metal layer formed on surfaces of the N-type epitaxial layer and the platinum material layer, wherein the metal layer serves as a back electrode.
Wherein the trench width of the portion of the first trench 105 away from the front side structure of the fast recovery diode is greater than the trench width of the portion of the first trench 105 adjacent to the front side structure of the fast recovery diode. The trench width of the portion of the second trench 106 distal from the fast recovery diode front structure is greater than the second trench 106 width of the portion proximal to the fast recovery diode front structure. The platinum material layer Pt in the first trench 105 is integrally connected to the platinum material layer Pt in the second trench 106. The first groove 105 and the second groove 106 are arranged axisymmetrically.
The invention provides a fast recovery diode with short reverse recovery time and excellent comprehensive performance. Then forming a special diffusion window on the back of the device, then performing low-temperature platinum diffusion, and performing laser annealing on the back after diffusion to diffuse platinum to the epitaxial region without influencing the front structure of the device. The platinum material defect formed by the method has large concentration of the platinum material in a drift region determining reverse recovery time and minimum minority carrier lifetime; and in the area with little influence on the reverse recovery, the concentration of the platinum material is relatively low, and the forward voltage drop of the device is reduced. The principle of the manufacturing method of the fast recovery diode is that the minority carrier lifetime near the drift region is lower by adjusting the concentration distribution of the platinum material, the minority carrier lifetime far away from the drift region is still kept higher, and the contradiction between the reverse recovery time and the on-state voltage drop is coordinated.
While the foregoing is directed to embodiments of the present invention, it will be understood by those skilled in the art that various changes may be made without departing from the spirit and scope of the invention.
Claims (5)
1. A method for manufacturing a fast recovery diode is characterized in that: the fast recovery diode comprises an N-type epitaxial layer, a fast recovery diode front structure formed on a first surface of the N-type epitaxial layer, a first groove and a second groove formed on a second surface of the N-type epitaxial layer, which is far away from the front structure of the fast recovery diode, a platinum material layer formed on the surfaces of the first groove and the second groove, and a metal layer formed on the surfaces of the N-type epitaxial layer and the platinum material layer, wherein the metal layer is used as a back electrode; the groove width of the part of the first groove far away from the front surface structure of the fast recovery diode is larger than the first groove width of the part of the first groove near the front surface structure of the fast recovery diode; the groove width of the part of the second groove far away from the front surface structure of the fast recovery diode is larger than the second groove width of the part of the second groove near the front surface structure of the fast recovery diode; the platinum material layer in the first groove is connected with the platinum material layer in the second groove into a whole; the first groove and the second groove are arranged in an axisymmetric manner;
the manufacturing method comprises the following steps:
providing an N-type substrate, forming an N-type epitaxial layer on the N-type substrate, and forming a front structure of a fast recovery diode on the surface of the N-type epitaxial layer far away from the N-type substrate;
performing back thinning treatment to remove the N-type substrate, and forming a first silicon oxide layer on the surface of the N-type epitaxial layer far away from the front structure of the fast recovery diode;
forming photoresist on the surface of the first silicon oxide layer, and forming a first opening and a second opening which penetrate through the photoresist;
etching the first silicon oxide layer by using photoresist as a mask to form a third opening which penetrates through the first silicon oxide layer and corresponds to the first opening and a fourth opening which corresponds to the second opening; etching the N-type epitaxial layer by using the first, second, third and fourth openings as windows, thereby forming a first groove corresponding to the first and third openings and a second groove corresponding to the second and fourth openings on the surface of the N-type epitaxial layer;
removing the photoresist;
forming platinum material layers on the surfaces of the two grooves, performing first laser annealing and platinum diffusion on the sides of the platinum material layers, and then performing thermal oxidation to form a second silicon oxide layer on the surfaces of the platinum material layers, wherein the second silicon oxide layer and the rest first silicon oxide layer are connected to form a whole silicon oxide layer; and
and forming a metal layer on the surface of the silicon oxide layer, wherein the metal layer is used as a back electrode.
2. The method of fabricating a fast recovery diode as claimed in claim 1, wherein: the width of the third opening is larger than that of the first opening, and the width of the fourth opening is larger than that of the second opening.
3. The method of fabricating a fast recovery diode as claimed in claim 2, wherein: the width of the groove of the part of the first groove far away from the front structure of the fast recovery diode is equal to the width of the third opening, and the width of the part of the first groove near the front structure of the fast recovery diode is equal to the width of the first opening; the width of the groove of the part of the second groove far away from the front structure of the fast recovery diode is equal to the width of the fourth opening, and the width of the part of the second groove near the front structure of the fast recovery diode is equal to the width of the second opening.
4. The method of fabricating a fast recovery diode as claimed in claim 1, wherein: the method further comprises the steps of: and carrying out second laser annealing on one side of the silicon oxide layer to further diffuse the platinum material layer, so that the platinum material layers of the two grooves are connected into a whole.
5. The method of fabricating a fast recovery diode as claimed in claim 1, wherein: the first groove and the second groove are arranged in an axisymmetric manner.
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| CN205177855U (en) * | 2015-10-23 | 2016-04-20 | 国网智能电网研究院 | Power device with control of local metal life -span |
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