CN107990989A - Thermopile IR detector and preparation method thereof - Google Patents
Thermopile IR detector and preparation method thereof Download PDFInfo
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- CN107990989A CN107990989A CN201711400216.7A CN201711400216A CN107990989A CN 107990989 A CN107990989 A CN 107990989A CN 201711400216 A CN201711400216 A CN 201711400216A CN 107990989 A CN107990989 A CN 107990989A
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- absorption layer
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- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 238000010521 absorption reaction Methods 0.000 claims abstract description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 47
- 150000001875 compounds Chemical class 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 206010037660 Pyrexia Diseases 0.000 claims description 4
- -1 part Chemical class 0.000 claims description 2
- 230000004043 responsiveness Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 description 6
- 238000002835 absorbance Methods 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000005619 thermoelectricity Effects 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004861 thermometry Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0803—Arrangements for time-dependent attenuation of radiation signals
Abstract
The present invention provides a kind of thermopile IR detector and preparation method thereof, is related to thermopile IR detector technical field.Thermopile IR detector includes processed silicon substrate, the infrared absorption layer set on processed silicon substrate, to be patterned in the middle part of processed silicon substrate and corrosionization after form the back of the body chamber that Open Side Down, back of the body intracavitary is provided with metallic reflector.One cavity is enclosed by processed silicon substrate, metallic reflector, infrared absorption layer, cavity is optical resonator.Infrared ray passes through lens focus to infrared absorption layer, the infrared ray for reaching infrared absorption layer just forms about 1/2 optical path difference with the infrared ray reflected by metallic reflector in infrared absorption layer, so as to form standing wave effect so that the infrared ray for focusing on hot junction infrared absorption layer is absorbed as far as possible.Infrared absorption rate is greatly improved, so as to increase the responsiveness and detectivity of thermopile IR detector, greatly reduces the noise equivalent temperature difference of thermopile IR detector.
Description
Technical field
The present invention relates to thermopile IR detector technical field, in particular to a kind of thermopile IR detector
And preparation method thereof.
Background technology
Non-contacting infrared thermometry can quickly and easily measure the surface temperature of object, it is not necessary to which mechanically contact is tested
Object and quickly measure temperature reading, can reliably measure heat, it is dangerous or be difficult to the object contacted, without polluting or damaging
Bad testee.Infrared measurement of temperature has the advantages that the response time is fast, non-contact, safe to use and service life is long, in product matter
Amount control and monitoring, equipment on-line fault diagnosis, safeguard protection and saving energy etc. played playing it is important
Effect.
All temperature are all ceaselessly sending infrared energy higher than the object of absolute zero to surrounding space.Object
The size of infrared signature such as emittance and its by wavelength distribution with its surface temperature have very close relationship.
Therefore, by the measurement of the infrared energy radiated to object itself, its surface temperature just can be measured exactly, here it is infrared
The objective base of radiation temperature measurement institute foundation.It is infrared between visible ray and radio wave, infrared wavelength commonly use micron expression, ripple
Long scope is 0.7 micron~1000 microns, in fact, 0.7 micron~14 micron wave bands are used for infrared measurement of temperature.
Realize non-contacting infrared thermometric technology include LONG WAVE INFRARED focus planar detector, pyroelectric infrared detector and
Thermopile IR detector based on Seebeck effect.Wherein LONG WAVE INFRARED focus planar detector is not applied to because of its higher cost
In the very inexpensive application such as smart home, intelligent building.Although pyroelectric infrared detector is of low cost, because of its needs
Mechanical chopper, and reduce the reliability of system and also limit its application.And thermopile IR detector is because its is cheap
Price, suitable performance are very suitable for smart home, intelligent building and inexpensive non-contact temperature measuring and are possibly realized.
Non-contacting infrared thermometric is by the portion such as optical system, photodetector, signal amplifier and signal processing, display output
It is grouped into.Optical system converges the Target Infrared Radiation energy in its visual field, the size of visual field by temperature measurer optical element and
Its location determination.Focus infrared energy is on photodetector and is changed into corresponding electric signal.The signal by amplifier and
Signal processing circuit, and according to the temperature value for being changed into measured target after its internal algorithm and backs correction.
The ir-absorbance in the hot junction of traditional thermopile device is relatively low.
The content of the invention
It is an object of the invention to provide a kind of thermopile IR detector and preparation method thereof, to improve the above problem.
To achieve these goals, the technical solution that the present invention takes is as follows：
An embodiment of the present invention provides a kind of thermopile IR detector, including processed silicon substrate, described processed
The infrared absorption layer set on silicon substrate, to be patterned in the middle part of the processed silicon substrate and corrosionization after formed open
The downward back of the body chamber of mouth, the back of the body intracavitary are provided with metallic reflector.By the processed silicon substrate, the metallic reflector,
The infrared absorption layer is enclosed a cavity, and the cavity is optical resonator.
Further, the thickness of above-mentioned optical resonator is not less than 1 μm.
Further, above-mentioned back of the body intracavitary is provided with supporting layer along the metallic reflector back side, to support the metal
Reflecting layer.
Further, the material of above-mentioned supporting layer is silica and/or silicon nitride.
Further, be provided with above-mentioned infrared absorption layer it is graphical after two thermocouple the first materials, described two
The spacing distance between every the first material of two neighboring thermocouple in the first material of a thermocouple is pre-determined distance.
Further, on the first material of above-mentioned two thermocouple and the infrared absorption layer on covered with isolation film.
Further, above-mentioned isolation film connects with being both provided with two on the top contact of each the first material of thermocouple
Contact hole, the portion of the isolation film in described two contact holes per two neighboring contact hole and between every two neighboring contact hole
Divide on isolation film and be both provided with second of material of thermoelectric pile, to form metal fever pile interconnection pattern.
Further, it is provided with passivation layer on above-mentioned second of material surface of thermoelectric pile.
Further, above-mentioned processed silicon substrate includes：Former silicon substrate, first set on the former silicon substrate are compound
It is the first compound edge part and the second compound edge part of film, the first of the sacrifice layer set on the described first compound edge part sacrificial
Second sacrifice edge part of domestic animal edge part and the sacrifice layer set on the described second compound edge part.
Second aspect, an embodiment of the present invention provides a kind of preparation method of thermopile IR detector, the method bag
Include：Infrared absorption layer is set on processed silicon substrate；To being patterned in the middle part of processed silicon substrate and corrosionization, formed
The back of the body chamber that Open Side Down；In the back of the body intracavitary, metallic reflector is set, so it is anti-by the processed silicon substrate, the metal
Penetrate layer, the infrared absorption layer is enclosed a cavity, the cavity is optical resonator.
The beneficial effect of the embodiment of the present invention is：Thermopile IR detector includes processed silicon substrate, described through adding
The infrared absorption layer set on work silicon substrate, to be patterned in the middle part of the processed silicon substrate and corrosionization after formed
The back of the body chamber that Open Side Down, the back of the body intracavitary are provided with metallic reflector.Pass through the processed silicon substrate, the metallic reflection
Layer, the infrared absorption layer are enclosed a cavity, and the cavity is optical resonator.Infrared ray passes through lens focus to heat
The infrared absorption layer in pile infrared detector hot junction, a part of infrared ray are absorbed by infrared absorption layer, and a part may pass through red
Incided after outer absorbed layer on metallic reflector, then reflect back into infrared absorption layer, so reach the infrared ray of infrared absorption layer
Infrared ray with returning by metallic reflector reflective surface just forms about 1/2 optical path difference in infrared absorption layer, so that
Form standing wave effect so that the infrared ray for focusing on hot junction infrared absorption layer is absorbed as far as possible.Infrared ray suction is greatly improved
Yield, so as to increase the responsiveness and detectivity of thermopile IR detector, greatly reduces the noise of thermopile IR detector
Equivalent temperature difference.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it will be appreciated that the following drawings illustrate only certain embodiments of the present invention, therefore be not construed as pair
The restriction of scope, for those of ordinary skill in the art, without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is the first structure figure of Conventional thermoelectric heap infrared detector provided in an embodiment of the present invention；
Fig. 2 is the second structure chart of Conventional thermoelectric heap infrared detector provided in an embodiment of the present invention；
Fig. 3 is the first structure figure formed in the preparation method of thermopile IR detector provided in an embodiment of the present invention；
Fig. 4 is the second structure chart formed in the preparation method of thermopile IR detector provided in an embodiment of the present invention；
Fig. 5 is the 3rd structure chart formed in the preparation method of thermopile IR detector provided in an embodiment of the present invention；
Fig. 6 is the 4th structure chart formed in the preparation method of thermopile IR detector provided in an embodiment of the present invention；
Fig. 7 is the 5th structure chart formed in the preparation method of thermopile IR detector provided in an embodiment of the present invention；
Fig. 8 is the 6th structure chart formed in the preparation method of thermopile IR detector provided in an embodiment of the present invention；
Fig. 9 is the 7th structure chart formed in the preparation method of thermopile IR detector provided in an embodiment of the present invention；
Figure 10 is the 8th structure chart formed in the preparation method of thermopile IR detector provided in an embodiment of the present invention；
Figure 11 is the 9th structure chart formed in the preparation method of thermopile IR detector provided in an embodiment of the present invention；
Figure 12 is the tenth structure chart formed in the preparation method of thermopile IR detector provided in an embodiment of the present invention；
Figure 13 is the 11st structure formed in the preparation method of thermopile IR detector provided in an embodiment of the present invention
Figure；
Figure 14 is the 12nd structure formed in the preparation method of thermopile IR detector provided in an embodiment of the present invention
Figure；
Figure 15 is the structure chart of thermopile IR detector provided in an embodiment of the present invention.
In figure：200- thermopile IR detectors；210- original silicon substrates；The first composite membranes of 212-；The first compound boundaries of 2122-
Edge；The second compound edge parts of 2124-；214- sacrifice layers；In the middle part of 2142- sacrifice layers；2144- first sacrifices edge part；2146-
Second sacrifices edge part；216- infrared absorption layers；The first material of 218- thermocouples；220- isolation films；2202- contact holes；
Second of material of 222- thermoelectric piles；224- passivation layers；2242- string holes；226- carries on the back chamber；228- metallic reflectors；230- supporting layers；
232- optical resonators.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, the technical solution in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, instead of all the embodiments.The present invention implementation being usually described and illustrated herein in the accompanying drawings
The component of example can be arranged and designed with a variety of configurations.
Therefore, below the detailed description of the embodiment of the present invention to providing in the accompanying drawings be not intended to limit it is claimed
The scope of the present invention, but be merely representative of the present invention selected embodiment.Based on the embodiments of the present invention, this area is common
Technical staff's all other embodiments obtained without creative efforts, belong to the model that the present invention protects
Enclose.
It should be noted that：Similar label and letter represents similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined, then it further need not be defined and explained in subsequent attached drawing in a attached drawing.
In the description of the present invention, it is necessary to which explanation, the orientation or position of the instruction such as term " on ", " under ", " interior " are closed
Be for based on orientation shown in the drawings or position relationship, or the invention product using when the orientation usually put or position close
System, is for only for ease of and describes the present invention and simplify description, rather than indicates or imply that signified device or element must have
Specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.In addition, term " the
One ", " second " etc. is only used for distinguishing description, and it is not intended that instruction or hint relative importance.
In the description of the present invention, it is also necessary to which explanation, unless otherwise clearly defined and limited, term " setting " are done
It broadly understood, for example, it may be being connected directly, can also be indirectly connected by intermediary, can be inside two elements
Connection.For the ordinary skill in the art, it can understand that above-mentioned term in the present invention specific contains with concrete condition
Justice.
Conventional thermoelectric heap infrared detector as shown in Figure 1, thermoelectric pile are a kind of pyroelectric infrared sensors, and thermoelectric pile is
Pyroelectric effect is based on by two or more --- Seebeck effects compose in series come the thermocouple of work, each thermocouple output
The output voltage of the mutual superimposed as thermoelectric pile of thermoelectrical potential.The structure of thermoelectric pile is by hot junction infrared absorption face and cold end reference temperature
End composition, H represent hot junction, and C represents cold end, and Conventional thermoelectric heap infrared detector structure hanging is had compared with Gao Saibei using one
Different materials (such as the p-type polysilicon and metallic aluminium) contact of gram coefficient difference as thermoelectric pile hot junction；And in substrate
Different materials contact becomes the cold end of thermoelectric pile.So multiple cool and heat ends join end to end to form thermopile device.Usual cold end generation
The temperature difference of table environment temperature, hot junction and cold end represent device hot junction absorption net radiation heat (hot junction absorb radiant heat subtract
Hot junction conduction, convection current and the heat radiateing) ratio with hot junction thermal capacitance.The temperature difference of hot junction and cold end is bigger, thermoelectric pile
The voltage signal of output is bigger.By reasonably optically and thermally designing so that hot junction has higher 8~14um LONG WAVE INFRAREDs
Absorptivity and suitable thermal capacitance and thermal conductivity, so as to fulfill suitable thermal time constant (time constant=hot junction thermal capacitance/hot junction to cold end
Thermal conductivity) to reach higher response device rate and detectivity, and relatively low noise equivalent temperature difference (NETD, Noise
Equivalent Temperature Difference)。
Referring to Fig. 2, shown Conventional thermoelectric heap infrared detector, including substrate 110, the heat of setting on a substrate 110
Hold film 120, the thermoelectric pile material 130 being arranged on the hot junction film, metallic aluminium 150, thermoelectric pile material 130 and metallic aluminium
The hole 160 set in film layer 140, passivation layer between 150.The thickness of hot junction film 120 is only about 1~2um, it is difficult to together
The ir-absorbance of Shi Shixian higher, relatively low thermal capacitance, relatively low thermal conductivity, so as to fulfill higher responsiveness and detectivity and
Relatively low NETD.
In order to realize higher ir-absorbance, it is necessary to increase the thickness of device hot junction film, this certainly will increase device heat
The thermal capacitance and thermal conductivity at end, analyze more than and know, the increase of hot junction thermal capacitance and thermal conductivity increase, the infra-red radiation that will absorb hot junction
The most of of heat imports cold end by heat transfer, and the net radiation heat that hot junction absorbs is reduced, and because the increase of hot junction thermal capacitance, directly
Cause the reduction of the temperature difference of hot junction and cold end, so that the responsiveness of device, detectivity are reduced, and the NETD of rising device.
If reducing the thickness of hot junction film, the infrared radiation absorption rate in hot junction certainly will be reduced, does not also reach raising device
The purpose of performance.Moreover, because reducing hot junction film thickness, the difficulty of technique processing will be greatly increased.Chamber technique is carried on the back therebetween
During, the rupture for causing hot junction film is very easy to, so as to destroy device.
In order to solve these defects existing for present thermopile IR detector, an embodiment of the present invention provides a kind of thermoelectricity
Heap infrared detector and preparation method thereof, by varying thermopile device infrared detector structure, had both increased the suction of hot junction film
Yield, and the thermal capacitance and thermal conductivity of hot junction film are reduced, responsiveness and detectivity are improved, so as to reduce noise equivalent temperature difference.
An embodiment of the present invention provides a kind of preparation method of thermopile IR detector, the method may include：
Infrared absorption layer is set on processed silicon substrate；
To being patterned in the middle part of processed silicon substrate and corrosionization, the back of the body chamber that Open Side Down is formed；
Metallic reflector is set in the back of the body intracavitary, and then passes through the processed silicon substrate, the metallic reflector, institute
State infrared absorption layer and be enclosed a cavity, the cavity is optical resonator.
Further, Fig. 3-Fig. 5 is referred to, infrared absorption layer is set on processed silicon substrate, including：
First composite membrane 212 is set on former silicon substrate 210；
Sacrifice layer 214 is set on first composite membrane 212；
The sacrifice layer 214 is etched into figure, forms the 2142, first sacrifice edge part 2144 and second in the middle part of sacrifice layer
Sacrifice edge part 2146；
2142, described first sacrifices on edge part 2144 and the second sacrifice edge part 2146 in the middle part of the sacrifice layer
Infrared absorption layer 216 is set.
Further, further, Fig. 6-Figure 12 is referred to, 2142 in the middle part of the sacrifice layer, the first sacrifice side
Sacrifice on edge part 2146 after setting infrared absorption layer 216, to the middle part of processed silicon substrate edge 2144 and described second
It is patterned and corrosionization, is formed before the back of the body chamber that Open Side Down, the method can also include：
The first material of thermoelectric pile and graphical is set on the infrared absorption layer 216, formed it is graphical after two
The first material 218 of thermocouple, every the first material of two neighboring thermocouple in the first material 218 of described two thermocouples
Spacing distance between 218 is pre-determined distance；
Covered with isolation film 220 on described two thermocouples the first materials 218 and on the infrared absorption layer 216；
Two contact holes are respectively provided with the top contact of the first material 218 of the isolation film 220 with each thermocouple
2202；
In described two contact holes 2202 per two neighboring contact hole 2202 and between every two neighboring contact hole 2202
The isolation film 220 part isolation film on be respectively provided with second of material of thermoelectric pile 222, to form metal fever pile interconnection figure
Shape；
Set passivation layer 224 simultaneously graphical on second of material of thermoelectric pile, 222 surface；It is described it is graphical after it is blunt
Change and two string holes 2242 are set on layer 224.
Correspondingly, to being patterned in the middle part of processed silicon substrate and corrosionization, the back of the body chamber that Open Side Down is formed, is wrapped
Include：
The middle part of the former silicon substrate 210 is patterned and corrosionization, forms the back of the body chamber 226 that Open Side Down.
Further, the middle part of the former silicon substrate 210 is patterned and corrosionization, forms the back of the body chamber that Open Side Down
226, including：
The middle part of the former silicon substrate 210 is patterned, deep silicon etching or KOH wet etching monocrystalline silicon, is formed
The back of the body chamber 226 that Open Side Down.
Further, 3 are please referred to Fig.1, be patterned at the middle part to the former silicon substrate 210, deep silicon etching or
KOH wet etching monocrystalline silicon, forms after the back of the body chamber 226 that Open Side Down, before the back of the body intracavitary sets metallic reflector, institute
The method of stating can also include：
The middle part of first composite membrane 212 is corroded, forms the first compound 2122 and second compound boundary of edge part
Edge 2124.
Further, 4-15 is please referred to Fig.1, the back of the body intracavitary sets metallic reflector, including：
Metallic reflector 228 is set by evaporating or sputtering in the back of the body chamber 226；
Along the metallic reflection by way of plasma reinforced chemical vapour deposition on the metallic reflector 228
228 back side of layer set supporting layer 230, to support the metallic reflector 228；
By the string holes 2242, changed using DHF, XeF2 or O2 plasma and in the middle part of the sacrifice layer 2142
After learning reaction, the optical resonator 232 is formed.
A kind of preparation method of thermopile IR detector provided in an embodiment of the present invention, is set on processed silicon substrate
Infrared absorption layer；To being patterned in the middle part of processed silicon substrate and corrosionization, the back of the body chamber that Open Side Down is formed；In the back of the body
Intracavitary sets metallic reflector, and then is enclosed by the processed silicon substrate, the metallic reflector, the infrared absorption layer
A cavity is formed, the cavity is optical resonator.Infrared ray passes through lens focus to thermopile IR detector hot junction
Infrared absorption layer, a part of infrared ray are absorbed by infrared absorption layer, and a part incides metal after may pass through infrared absorption layer
On reflecting layer, then reflect back into infrared absorption layer, so reach the infrared ray of infrared absorption layer with being reflected by metallic reflector
The infrared ray that face reflects just forms about 1/2 optical path difference in infrared absorption layer, so as to form standing wave effect so that focuses on
Infrared ray to hot junction infrared absorption layer is absorbed as far as possible.Infrared absorption rate is greatly improved, so that it is red to increase thermoelectric pile
The responsiveness and detectivity of external detector, greatly reduce the noise equivalent temperature difference of thermopile IR detector.
5 are please referred to Fig.1, an embodiment of the present invention provides a kind of thermopile IR detector 200, including processed silicon to serve as a contrast
Bottom, the infrared absorption layer 216 set on the processed silicon substrate, to being patterned in the middle part of the processed silicon substrate
And the back of the body chamber 226 that Open Side Down is formed after corrosionization, it is provided with metallic reflector 228 in the back of the body chamber 226.Pass through the warp
Processing silicon substrate, the metallic reflector 228, the infrared absorption layer 216 are enclosed a cavity, and the cavity is optics
Resonator 232.
Further, the thickness of the optical resonator 232 is not less than 1 μm.In the present embodiment, the optical resonator
232 thickness can be about 1/4 wavelength of 8~14um long-wave infrareds.For example, the thickness of the optical resonator 232 can be 2
μm.The thickness of infrared absorption layer 216 can be 0.5 μm.To significantly reduce the thickness of hot junction infrared absorption layer.So as to both improve heat
The ir-absorbance in pile infrared detector hot junction, and reduce the thermal capacitance of hot junction film and the purpose of thermal conductivity.
Further, 228 back side of metallic reflector is provided with supporting layer 230 in the back of the body chamber 226, with support
The metallic reflector 228.
Further, the material of the supporting layer 230 can be silica and/or silicon nitride.
Further, be provided with the infrared absorption layer 216 it is graphical after two thermocouples the first materials 218,
The spacing distance between every two neighboring thermocouple the first material 218 in the first material 218 of described two thermocouples is
Pre-determined distance.
Further, on the first material 218 of described two thermocouples and the infrared absorption layer 216 on covered with isolation
Film 220.
Further, it is both provided with the top contact of the first material 218 of the isolation film 220 with each thermocouple
Two contact holes 2202, per two neighboring contact hole 2202 and per two neighboring contact hole in described two contact holes 2202
Second of material of thermoelectric pile 222 is both provided with the part isolation film of the isolation film 220 between 2202, to form metal fever
Pile interconnection pattern.
Further, described second of material of thermoelectric pile 222 can be aluminium.
Further, it is provided with passivation layer 224 on second of material of thermoelectric pile, 222 surface.
Further, two string holes 2242 are provided with the passivation layer 224.Neither influence 8~14um LONG WAVE INFRAREDs
Absorptivity, also reduces bridge floor thermal capacitance and thermal conductivity, so as to further increase responsiveness and the detection of thermopile IR detector
Rate, can significantly reduce the noise equivalent temperature difference of thermopile IR detector.Keeping, thermopile IR detector performance is constant
On the premise of, chip area can be substantially reduced, can also correspondingly reduce the area of hot junction infrared absorption layer and the ruler of back of the body chamber
Risk very little, that hot junction film ruptures when can further drop low back chamber etching, significantly improves the manufacturability of device.
Further, the material of the isolation film 220 can be silica and/or silicon nitride.The material of the passivation layer 224
Material can be silica and/or silicon nitride.
Further, the processed silicon substrate includes：Former silicon substrate 210, the set on the former silicon substrate 210
First compound 2122 and second compound edge part 2124 of edge part of one composite membrane 212, in the described first compound edge part 2122
The first of the sacrifice layer 214 of upper setting sacrifices edge part 2144 and is set on the described second compound edge part 2124 described sacrificial
The second of domestic animal layer sacrifices edge part 2146.
Further, the material of first composite membrane 212 can be silica.First compound edge part 2122 and second
The material of compound edge part 2124 can be silica.The material of the sacrifice layer can be polysilicon, polyimides.I.e. first
It can be polysilicon, polyimides to sacrifice edge part 2144 and the described second material for sacrificing edge part 2146.
Further, the material of the infrared absorption layer 216 can be silica and/or silicon nitride.
Furthermore, it is possible to chip area is substantially reduced, so as to reduce back of the body cavity area, so as to add thermopile IR detector
Fine ratio of product, improve the manufacturability of thermopile IR detector, greatly reduce the manufacture of thermopile IR detector
Cost.
A kind of operation principle of thermopile IR detector 200 provided in an embodiment of the present invention is as follows：
The infrared ray of 8~14um wavelength by the infrared absorption layer 216 of lens focus to thermopile IR detector hot junction,
A part of infrared ray is absorbed by infrared absorption layer 216, and a part incides metallic reflector after may pass through infrared absorption layer 216
On 228, then reflect back into infrared absorption layer 216, so reach the infrared ray of infrared absorption layer 216 and pass through metallic reflector
The infrared ray that 228 reflective surfaces are returned just forms about 1/2 optical path difference in infrared absorption layer, so that standing wave effect is formed,
So that the infrared ray for focusing on hot junction infrared absorption layer 216 is absorbed as far as possible.
It is apparent to those skilled in the art that for convenience and simplicity of description, the thermoelectricity of foregoing description
The specific work process of heap infrared detector, may be referred to pair in the preparation method embodiment of foregoing thermopile IR detector
Process is answered, details are not described herein.
A kind of thermopile IR detector provided in an embodiment of the present invention, including processed silicon substrate, described processed
The infrared absorption layer set on silicon substrate, to be patterned in the middle part of the processed silicon substrate and corrosionization after formed open
The downward back of the body chamber of mouth, the back of the body intracavitary are provided with metallic reflector.By the processed silicon substrate, the metallic reflector,
The infrared absorption layer is enclosed a cavity, and the cavity is optical resonator.Infrared ray passes through lens focus to thermoelectricity
The infrared absorption layer in heap infrared detector hot junction, a part of infrared ray are absorbed by infrared absorption layer, and a part may pass through infrared
Incided after absorbed layer on metallic reflector, then reflect back into infrared absorption layer, so reach infrared absorption layer infrared ray with
About 1/2 optical path difference is just formed in infrared absorption layer by the infrared ray that metallic reflector reflective surface is returned, so that shape
Into standing wave effect so that the infrared ray for focusing on hot junction infrared absorption layer is absorbed as far as possible.Infrared ray absorbing is greatly improved
Rate, so as to increase the responsiveness and detectivity of thermopile IR detector, greatly reduces the noise etc. of thermopile IR detector
Imitate the temperature difference.
It should be noted that each embodiment in this specification is described by the way of progressive, each embodiment weight
Point explanation is all difference with other embodiment, between each embodiment identical similar part mutually referring to.
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the invention, for the skill of this area
For art personnel, the invention may be variously modified and varied.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of thermopile IR detector, it is characterised in that including processed silicon substrate, set on the processed silicon substrate
The infrared absorption layer put, to be patterned in the middle part of the processed silicon substrate and corrosionization after form the back of the body that Open Side Down
Chamber, the back of the body intracavitary are provided with metallic reflector；Pass through the processed silicon substrate, the metallic reflector, the infrared suction
Receive layer and be enclosed a cavity, the cavity is optical resonator.
2. thermopile IR detector according to claim 1, it is characterised in that the thickness of the optical resonator is not small
In 1 μm.
3. thermopile IR detector according to claim 1, it is characterised in that the back of the body intracavitary is anti-along the metal
Penetrate layer back side and be provided with supporting layer, to support the metallic reflector.
4. thermopile IR detector according to claim 3, it is characterised in that the material of the supporting layer is silica
And/or silicon nitride.
5. according to the thermopile IR detector described in any claim in claim 1-4, it is characterised in that the infrared absorption
Be provided with layer it is graphical after two thermocouple the first materials, every adjacent two in the first material of described two thermocouples
Spacing distance between the first material of a thermocouple is pre-determined distance.
6. thermopile IR detector according to claim 5, it is characterised in that the first material of described two thermocouples
Covered with isolation film on the upper and infrared absorption layer.
7. thermopile IR detector according to claim 6, it is characterised in that the isolation film and each thermocouple the
Two contact holes are both provided with a kind of top contact of material, in described two contact holes per two neighboring contact hole and
Second of material of thermoelectric pile is both provided with the part isolation film of the isolation film between per two neighboring contact hole, to be formed
Metal fever pile interconnection pattern.
8. thermopile IR detector according to claim 7, it is characterised in that described second of material surface of thermoelectric pile
On be provided with passivation layer.
9. thermopile IR detector according to claim 8, it is characterised in that the processed silicon substrate includes：It is former
Silicon substrate, the first compound edge part of the first composite membrane set on the former silicon substrate and the second compound edge part, in institute
State the first sacrifice edge part of the sacrifice layer set on the first compound edge part and set on the described second compound edge part
The second of the sacrifice layer sacrifices edge part.
A kind of 10. preparation method of thermopile IR detector, it is characterised in that the described method includes：
Infrared absorption layer is set on processed silicon substrate；
To being patterned in the middle part of processed silicon substrate and corrosionization, the back of the body chamber that Open Side Down is formed；
Metallic reflector is set in the back of the body intracavitary, and then passes through the processed silicon substrate, metallic reflector, described red
Outer absorbed layer is enclosed a cavity, and the cavity is optical resonator.
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| CN112802956A (en) * | 2021-04-09 | 2021-05-14 | 山东新港电子科技有限公司 | MEMS thermopile infrared detector and manufacturing method thereof |
| CN113091918A (en) * | 2021-04-07 | 2021-07-09 | 无锡物联网创新中心有限公司 | Performance test method for thermal infrared detector |
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