CN106949978A - A kind of thermal imaging sensor pixel cell and its array - Google Patents
A kind of thermal imaging sensor pixel cell and its array Download PDFInfo
- Publication number
- CN106949978A CN106949978A CN201710076923.9A CN201710076923A CN106949978A CN 106949978 A CN106949978 A CN 106949978A CN 201710076923 A CN201710076923 A CN 201710076923A CN 106949978 A CN106949978 A CN 106949978A
- Authority
- CN
- China
- Prior art keywords
- heat
- heat absorption
- absorption plate
- thermal imaging
- condenser lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001931 thermography Methods 0.000 title claims abstract description 49
- 238000010521 absorption reaction Methods 0.000 claims abstract description 153
- 230000005855 radiation Effects 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000001514 detection method Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 48
- 230000008859 change Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- -1 calcirm-fluoride Chemical compound 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 2
- 229910001632 barium fluoride Inorganic materials 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004861 thermometry Methods 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J2005/103—Absorbing heated plate or film and temperature detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J2005/106—Arrays
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The present invention relates to a kind of thermal imaging sensor pixel cell and its array, the pixel cell includes：Substrate, heat convergence component and heat absorption component；Heat absorption component is located between substrate and heat convergence component；Heat convergence component includes condenser lens；Condenser lens is embedded in the hanging top for being erected at heat absorption component in hollow framework；Heat absorption component includes heat absorption plate and the temperature sensor positioned at heat absorption plate surface；Heat absorption plate is vacantly erected at the top of substrate by the first support frame；Condenser lens is used for the surface that heat radiation is converged to heat absorption plate.Technical scheme provided in an embodiment of the present invention, by setting, hanging condenser lens is converged the heat radiation of object, so as to reduce thermal scattering, improves the ratio of heat absorption, and then improve the degree of accuracy of detection.
Description
Technical field
The present invention relates to field of measuring technique, more particularly to a kind of thermal imaging sensor pixel cell and its array.
Background technology
According to Planck blackbody theory of radiation, any temperature can all send related to its characteristic higher than the object of absolute zero
Infra-red radiation, also known as heat radiation.The thermal radiation property of object mainly determines that temperature is higher by the temperature of object, radiation intensity
Bigger, energy is higher.The scales that infrared detective can be carried out are infrared sensor or infrared detector, are divided into photon
Type infrared sensor and the major class of heat-measuring type infrared sensor two.Photon type infrared sensor is imitated using the photoelectricity of semi-conducting material
Should, by measuring photovoltaic or photoconduction that the electronic state of the detector caused by the photon of electromagnetic infrared wave changes and produced etc.
Phenomenon realizes infrared survey.Photon type infrared sensor has higher detectivity, and noise equivalent temperature poor (NETD) can
To reach 5~10mK level, but exist need Dewar or mechanical refrigeration, it is system complex, bulky, expensive,
And the low significant drawback of reliability caused by the integrated difficult, thermal stress of signal processing circuit.
Heat-measuring type infrared sensor is if thermal imaging sensor is using sensor own temperature rise caused by infra-red radiation
The physical property for changing heat-sensitive element realizes thermal imaging.The heat and its caused temperature change produced due to infra-red radiation is non-
It is often low, in order to obtain higher sensitivity, it is necessary to which the heat for suppressing sensor absorption scatters and disappears to substrate and environment, therefore sensor
Supported hanging in substrate surface with the low structure of thermal conductivity.Various sensitive materials and structure are continued to bring out in recent years, are based on
The infrared sensor of the materials such as vanadium oxide, polysilicon (non-crystalline silicon), pyroelectricity starts commercialization.Thermal imaging sensor is without system
Cold, low cost, small volume, lightweight, simple system, it is easy to safeguard and use, but the detectivity of heat sensor is usual
1 order of magnitude lower than photon sensor, the noise equivalent temperature difference of the heat sensor of commercialization is generally 30~150mK or so.
Common thermal imaging sensor includes heat absorbing layer and the temperature sensor on heat absorbing layer.Conventional temperature
The resistance that degree Sensitive Apparatus is made for vanadium oxide or non-crystalline silicon (polysilicon), and infrared thermoelectrical material etc..Due to infrared heat
Radiation is extremely faint, it is necessary to which heat absorbing layer is supported into hanging using elongated support arm, to reduce the heat of heat radiation to substrate
Loss, as far as possible improve heat radiation produce temperature change, so as to improve detectivity.Because support arm occupies heat absorption
Area where layer, causes heat absorbing layer area to reduce so that sensitivity declines.In addition, the scale of focal plane arrays (FPA) in recent years
Constantly increase, each elemental area constantly reduces, and support arm can not reduce in proportion, further have impact on detectivity,
The continuation that also limit array scale expands.
In order to compensate the area of support arm occupancy, some thermal imaging sensors add one layer of heat suction above heat absorbing layer
Layer is received, is supported heat absorbing layer using a support column, frame is on lower floor's heat absorbing layer with temperature sensor.So
The heat that upper strata heat absorbing layer absorbs, lower floor's heat absorbing layer where temperature sensor is delivered to by support column, changes temperature
Change.Therefore, high-performance infrared thermal imaging sensor construction carries double-layer structure and a support column, realizes to heat radiation
Maximum absorption.But this structure, there is also more obvious shortcoming, mainly double-layer structure and support column is increased considerably
The thermal capacity of system, have impact on the amplitude and the response speed of system of temperature change caused by heat absorption.
The content of the invention
The technical problems to be solved by the invention are to overcome the defect of prior art there is provided a kind of thermal imaging sensor pixel
Unit, by setting, hanging condenser lens is to improve the range of temperature of heat absorption plate, and then can improve heat radiation survey
The sensitivity of temperature.
For this purpose, the present invention proposes a kind of thermal imaging sensor pixel cell, including：
Substrate, heat convergence component and heat absorption component；The heat absorption component is located at the substrate and heat convergence group
Between part；
The heat convergence component includes condenser lens；The condenser lens is embedded in hollow framework and is vacantly erected at
The top of the heat absorption component；
The heat absorption component includes heat absorption plate and the temperature sensor positioned at the heat absorption plate surface；The heat is inhaled
Receive the top that plate is vacantly erected at the substrate by the first support frame；
The condenser lens is used for the surface that heat radiation is converged to the heat absorption plate.
It is preferred that, the thermal imaging sensor pixel cell also includes：Heat between the substrate and heat absorption component
Reflection subassembly；
The heat reflection component includes the heat reflection film layer being located between the substrate and heat absorption plate；The thermal reflecting coating
Layer is used to the heat radiation for transmiting the heat absorption plate reflexing to the heat absorption plate.
It is preferred that, the condenser lens the heat absorption plate projection planar be more than or equal to the heat absorption
The area of plate；
The heat absorption plate is less than or equal to the heat reflection film layer in the projection where the heat reflection film layer in plane
Area.
It is preferred that, the distance between the heat reflection film layer and the heat absorption plate are 2-4 microns.
It is preferred that, the condenser lens is the dimpling lens of the hexagon with two-sided bulge-structure.
It is preferred that, the distance between the heat absorption plate and the condenser lens are a, 2f >=a；
Wherein, f is the focal length of the condenser lens.
It is preferred that, the distance between the heat absorption plate and the condenser lens are equal to the focal length of the condenser lens.
It is preferred that, first support frame includes adiabatic support arm and the first support column；The adiabatic support arm is used for solid
The fixed heat absorption plate, first support column makes the heat absorption plate vacantly be erected at institute by supporting the adiabatic support arm
State the top of substrate.
It is preferred that, the thermal imaging sensor pixel cell also includes lens supports post, and the condenser lens passes through described
Mirror support column supports the framework, so that the condenser lens is vacantly erected at the top of the heat absorption plate.
On the other hand, the embodiment of the present invention additionally provides a kind of thermal imaging sensor pixel array, including multiple above-mentioned
Anticipate a kind of thermal imaging sensor pixel cell, the framework is passed through between the condenser lens of the multiple thermal imaging sensor unit
Connect as one, the same frame of the framework is shared between adjacent condenser lens.
Technical scheme provided in an embodiment of the present invention, by setting, hanging condenser lens makes the heat radiation of object be converged
It is poly-, so as to reduce thermal scattering, the ratio of heat absorption is improved, and then improve the degree of accuracy of detection；Further, one is passed through
Layer heat absorption plate heating, so as to reduce the thermal capacity of system, the heating produced by increasing in the case of same amount of heat absorption
Amplitude, and then improve the degree of accuracy of detection.Further, heat absorption plate is suspended on above substrate, it is to avoid heat absorption plate
Heat to the diffusion of substrate, further increase the degree of accuracy of hot radiation measurement.
Brief description of the drawings
The features and advantages of the present invention can be more clearly understood from by reference to accompanying drawing, accompanying drawing is schematical without that should manage
Solve to carry out any limitation to the present invention, in the accompanying drawings：
Fig. 1 is a kind of structural representation of thermal imaging sensor pixel cell provided in an embodiment of the present invention；
Fig. 2 is the cross-sectional schematic schematic diagram of thermal imaging sensor pixel cell provided in an embodiment of the present invention；
Fig. 3 is the structural representation of thermal imaging sensor pixel array provided in an embodiment of the present invention；
Fig. 4 is the structural representation at another visual angle of thermal imaging sensor pixel array provided in an embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the present invention is described in detail.
The embodiments of the invention provide a kind of thermal imaging sensor pixel cell, including：
Substrate 302, heat convergence component and heat absorption component；The heat absorption component is located at the substrate and heat is converged
Between component；
The heat convergence component includes condenser lens；The condenser lens is embedded in suspension frame in hollow framework 102
It is located at the top of the heat absorption component；
The heat absorption component includes heat absorption plate 201 and the temperature sensor 202 positioned at the heat absorption plate surface；Institute
State the top that heat absorption plate 201 is vacantly erected at the substrate 302 by the first support frame；
The condenser lens is used for the surface that heat radiation is converged to the heat absorption plate 201.
As shown in figure 1, the shortcoming in order to solve prior art, the embodiment of the present invention proposes a kind of thermal imaging sensor picture
Plain unit, wherein, the major function of heat convergence component is to focus IR radiation.Condenser lens can be dimpling lens 101,
Dimpling lens 101 are supported by hollow framework 102, and are suspended on the top of heat absorption plate 201 and temperature sensor 202, and heat is inhaled
Receiving between plate 201 and dimpling lens 101 does not have attachment structure or supporting construction, and the spacing of the two can be dimpling lens 101
Focal length, so as to so that dimpling lens 101 converge Voice segment on the surface of heat absorption plate 201.Heat absorption component is main
Function is absorption heat and converts heat to electric signal.The heat radiation of exterior object is passed through after dimpling lens 101, is focused
On the surface of heat absorption plate 201, change the temperature change of heat absorption plate 201, and then change the temperature being located on heat absorption plate 201 and pass
The output of sensor 202, realizes the thermal imaging to external environment condition.The embodiment of the present invention condenser lens hanging by setting makes object
Heat radiation converged, so as to reduce thermal scattering, improve the ratio of heat absorption, and then improve the degree of accuracy of detection；
It is preferred that, thermal imaging sensor pixel cell provided in an embodiment of the present invention also includes：Positioned at the He of substrate 302
Heat reflection component between heat absorption component；
The heat reflection component includes the heat reflection film layer 301 being located between the substrate 302 and heat absorption plate 201；Institute
Stating heat reflection film layer 301 is used to the heat radiation for transmiting the heat absorption plate 201 reflexing to the heat absorption plate 201.
It should be noted that the function of heat reflection component, which is the heat that will transmit through heat absorption plate 201, is reflected back heat absorption plate
201 carry out double absorption, further improve the ratio of heat absorption.In traditional thermal imaging sensor, absorbed by heat absorbing layer
Heat make the heating of two layers heat absorbing layer so that thermal capacitance quantitative change is big, temperature change caused by influence heat absorption, and then influence to survey
The sensitivity of warm system；The embodiment of the present invention is due to only having one layer of heat absorption plate 201 to heat up, so as to reduce the thermal capacitance of system
Amount, the increasing extent of temperature produced by increasing in the case of same amount of heat absorption.Further, the embodiment of the present invention is due to setting
Heat reflection film layer 301, makes to be reflected back heat absorption plate 201 through the heat of heat absorption plate 201 and carries out double absorption, further carries
The high ratio of heat absorption, improves temperature change degree, and then can improve sensitivity of thermometry.
On the basis of above-described embodiment, the condenser lens heat absorption plate 201 projection planar be more than or
Equal to the area of the heat absorption plate 201；The heat absorption plate 201 the heat reflection film layer 301 projection planar
Less than or equal to the area of the heat reflection film layer 301.Specifically, the dimpling lens 101 are in the place plane of heat absorption plate 201
Interior projected area is much larger than the area of heat absorption plate 201, because the packing ratio that dimpling lens 101 take is high, therefore effectively heat
Absorption area is improved.Simultaneously as the area of heat absorption plate 201 reduces, thermal capacity reduction, identical heat obtains bigger temperature and become
Change, improve sensitivity of thermometry, further, since the area of heat absorption plate 201 reduces, the heat absorbed is in heat absorption plate 201
Conduction time reduces, so as to improve the response speed of temperature transducer.
On the basis of above-described embodiment, it is preferred that between the heat reflection film layer 301 and the heat absorption plate 201
Distance is 2-4 microns.It should be noted that heat reflection film layer 301 can be arranged directly on the upper surface of substrate 302, heat absorption
Spacing between plate 201 and heat reflection film layer 301 is generally the 1/4 of heat radiation wavelength, so that heat reflection film layer 301 and heat absorption
The distance between upper surface of plate 201 can be with 2-4 microns, and for far infrared band, spacing can be chosen for 2.5 μm.Thermal reflecting coating
Layer 301 can be metallic material film, can be generally hundreds of nanometers using aluminium, gold manufacture, thickness.On the basis of above-described embodiment
On, it is preferred that the temperature sensor 202 can be diode temperature sensor 202 or platinum resistance temperature sensor 202.
Wherein, the condenser lens is preferably the dimpling lens 101 of the hexagon with two-sided bulge-structure.In the present invention
In embodiment, dimpling lens 101 can not inhaled substantially using infrared transmission material manufacture, heat radiation when passing through dimpling lens 101
Receive or seldom absorb, therefore dimpling lens 101 no longer increase as the first layer heat absorbing layer of conventional thermal imaging sensor and are
The thermal capacity of system, on the contrary, acted on by the convergences of dimpling lens 101, makes the ratio that heat radiation is absorbed by heat absorption plate 201 more
Height, so as to improve the accuracy of thermometric.Wherein, the hollow framework 102 of support dimpling lens is very thin, so as to project
Heat radiation to the surface of dimpling lens 101 is all focused by dimpling lens 101, and heat is converged on heat absorption plate 201, by
In the focus very little of convergence, thus the heat absorption plate 201 that can be tried one's best with usable floor area small, the thermal capacity of reduction heat absorption plate 201,
And then bigger temperature change is obtained, improve the sensitivity of thermometric.
On the basis of above-described embodiment, the distance between the heat absorption plate 201 and described condenser lens are a, 2f >=
a；Wherein, f is the focal length of the condenser lens.It is preferred that, the distance between described heat absorption plate 201 and the condenser lens etc.
In the focal length of the condenser lens.By taking dimpling lens 101 as an example, due to heat radiation be focused onto after dimpling lens 101 it is micro-
In the focus of convex lens 101, so as to when heat absorption plate 201 is arranged on into the focal point of condenser lens, can converge heat radiation
Onto heat absorption plate 201, the heat for absorbing heat absorption plate 201 is more, so as to improve the accuracy of thermometric.
On the basis of above-described embodiment, it is preferred that the material of the condenser lens be silicon, germanium, calcirm-fluoride, barium fluoride,
Polyethylene, polypropylene, polytetrafluoroethylene (PTFE) or polymethyl methacrylate.It should be noted that support condenser lens is hollow
Framework 102 can be using silicon micromachining technology manufacture, and material can be silicon.Condenser lens can be to be manufactured by infrared transmission material
Dimpling lens 101, so as to reduce absorption of the condenser lens to heat radiation, reach and do not absorb or absorb less substantially.Condenser lens
The dimpling lens 101 of structure can be played for double-side convex, material can be for inorganic material silicon, germanium, calcirm-fluoride, barium fluoride etc., can be with
For organic material polyethylene, polypropylene, polytetrafluoroethylene (PTFE) or polymethyl methacrylate etc..It is saturating less than the dimpling of silicon for fusing point
The material of mirror 101, can manufacture the dimpling lens 101 of two-sided protrusion using the method for melting backflow.
On the basis of above-described embodiment, thermal imaging sensor pixel cell provided in an embodiment of the present invention also includes lens
Support column 103, the condenser lens supports the framework 102 by the lens supports post 103, so that the condenser lens is outstanding
Sky is erected at the top of the heat absorption plate 201.
Specifically, the framework 102 of a dimpling lens 101 can be supported using four lens supports posts 103, when multiple pictures
Plain unit spliced together when, the dimpling lens 101 of multiple pixel cells can share four lens supports posts 103, you can with
The framework 102 of multiple dimpling lens 101 is supported by four the first support columns 103.
Further, in order that the heat absorption plate 201 is vacantly erected at the upper of the substrate 302 by the first support frame
Side.It is preferred that, first support frame can include the adiabatic support column 204 of support arm 203 and first；The adiabatic support arm
203 are used to fix the heat absorption plate 201, and first support column 204 makes the heat by supporting the adiabatic support arm 203
Baffle 201 is vacantly erected at the top of the substrate 302.
It should be noted that heat absorption plate 201 by the first support column 204 support vacantly with the top of substrate 302, so as to
It is lost in the heat for reducing heat absorption plate 201 to substrate 302, the temperature change that heat radiation is produced is improved as far as possible, so as to improve spy
Survey sensitivity.Simultaneously as adiabatic support arm 203 no longer takes effective heat absorption area, so the length of adiabatic support arm 203
Degree can increase as far as possible, improve the effect being thermally isolated.
As shown in Fig. 2 be the section and operation principle schematic diagram of three pixel cells, during work, dimpling lens 101 are by warm
Radiation is converged on heat absorption plate 201, raises the temperature of heat absorption plate 201, changes the temperature positioned at the surface of heat absorption plate 201
The output of sensor 202, producing electric signal is used for thermal imaging.Temperature sensor 202 can be diode or RTD, and it is exported
Electrical signal is relevant with temperature, and the temperature change of heat absorption plate 201 caused by heat radiation passes to temperature sensor 202, changes temperature
Spend the signal that sensor 202 is exported.Because dimpling lens 101 do not absorb infra-red radiation, the energy of infra-red radiation is served only for heating
Heat absorption plate 201, therefore the area and thermal capacity of heated structure are far smaller than conventional infrared thermal imaging sensing system
Area and thermal capacity, so that in the case of identical emittance, bigger temperature change and output electric signal are obtained, or
In the case of identical electric signal output, smaller emittance can be measured, that is, the detectivity improved.Further,
Through heat absorption plate 201 radiation reflected by the heat reflection film layer 301 of lower section after, absorbed into heat absorption plate 201 again,
Improve the energy that heat absorption laminate absorbs radiation.Spacing between heat absorption plate 201 and heat reflection film layer 301 is generally hot spoke
The 1/4 of ejected wave length, for far infrared band, spacing can be chosen for 2.5 μm.Heat reflection film layer 301 is metallic material film, is led to
Often it can be hundreds of nanometers using aluminium or gold manufacture, thickness.
On the other hand, as shown in figure 3, the embodiment of the present invention additionally provides a kind of thermal imaging sensor pixel array, including
Thermal imaging sensor pixel cell described in multiple above-described embodiments, the condenser lens of the multiple thermal imaging sensor unit it
Between connected as one by the framework 102, between adjacent condenser lens share the framework 102 same frame.
Wherein, during multiple pixel cell composition pel arrays, multiple thermal imaging pixel cells can be by same set of lens branch
Dagger 103 is supported.I.e. multiple pixel cells can share four lens supports posts 103, and four are set without each pixel cell
Root lens supports post 103, so as to can both save material, can avoid support column from absorbing or block heat radiation again.
The array structure schematic diagram of 3 × 3 scales is illustrated in figure 3, it can be seen that the framework of multiple condenser lenses
102 connect as one, and can share four lens supports posts 103 and support, and are suspended on the top of substrate 302, also, adjacent
Two condenser lenses can share a frame.Framework 102 is hollow frame, and condenser lens is fixed in hollow frame, hollow
The shape of framework can be rectangle (containing square) or equilateral Long Hexagon structure, during using rectangle (containing square) structure,
Pixel cell in array is arranged according to determinant, and at the edge of whole array, the outside of framework 102 is neat, such as Fig. 3 institutes
Situation about showing.During using equilateral Long Hexagon structure, pixel in array is according to cellular arrangement, at the edge of whole array not
It is neat.Fig. 4 changes the structural representation of viewing angles for the array of 3x3 scales.It can be seen that the condenser lens
The dimpling lens 101 of structure can be played for double-side convex.
In summary, technical scheme provided in an embodiment of the present invention, in terms of there is following three：
First, the thermal capacity of thermal imaging sensor pixel cell provided in an embodiment of the present invention is greatly lowered.Traditional
In thermal imaging sensor, the heat absorbed by heat absorbing layer makes two layers of heat absorbing layer heating.In the embodiment of the present invention, infrared transmission
The dimpling lens 101 of material manufacture do not absorb or seldom absorptive thermal radiation substantially, and only heat absorption plate 201 absorbs heat and risen
Temperature.Due to through over-focusing heat radiation area very little, it is only necessary to which the heat absorption plate 201 of very little can just realize whole dimpling lens
The absorption of the corresponding radiation of 101 areas, therefore the infrared absorption structural area of heat absorption plate 201 can significantly reduce, so that
The thermal capacity of reduction system, the increasing extent of temperature produced by increasing in the case of same amount of heat absorption.For example, can be by heat absorption
The area of plate 201 is reduced to the 1/5~1/10 of traditional heat absorbing layer, therefore in the case of same amount of heat absorption, increasing extent of temperature
Original 5~10 times can be increased to.That is, in the case of identical thermal radiation absorption rate, the heat of sensor proposed by the present invention
Capacity is greatly lowered, and increasing extent of temperature is improved caused by heat radiation, so as to improve detectivity.
Secondly, adiabatic support arm 203 no longer takes effective heat absorption area, therefore heat absorption efficiency and insulating capacity can be with
Further improve.Conventional double heat absorbing layer structure, the heat radiation of the heat absorbing layer projection of its top layer, in adiabatic arm region
It can not absorb, cause the waste of radiations heat energy.In the embodiment of the present invention, radiations heat energy is converged to focus by dimpling lens 101, because
This adiabatic support arm 203 is not take up heat absorption area, so as to further improve absorption efficiency.Because dimpling lens 101 are occupied
All regions in addition to framework, and the area of framework is relatively small, the packing ratio that dimpling lens 101 take is high, therefore effectively
Heat absorption area is improved.Because adiabatic support arm 203 is not take up absorption area, therefore the support arm knot of larger lengths can be used
Structure, with reduce heat absorption plate 201 absorption heat by adiabatic support arm 203 to substrate 302 scatter and disappear, make the heat of absorption all
Temperature for changing heat absorption plate 201.
3rd, the reduction of thermal imaging sensor pixel cell thermal capacity, heat transfer distance reduce, response speed is improved.Tradition
The hot-fluid of double-decker, is the heat absorbing layer absorption by top layer, the heat absorbing layer and temperature of lower floor is transmitted to via heat transfer post
Spend sensor.The area of heat absorption plate 201 in the embodiment of the present invention is reduced, and thermal capacity significantly reduces, required for heat conduction
Time also significantly reduce；Smaller heat absorption plate 201 is used in addition and cancels heat transfer post, and heat is by heat absorption plate 201
Only conducted after absorption in the heat absorption plate 201 of reduced size, it is to avoid conduction and heat transfer post in bigger heat absorbing layer
Interior conduction, so that the conduction distance of heat is greatly lowered, so as to improve response speed.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or deposited between operating
In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Nonexcludability is included, so that process, method, article or equipment including a series of key elements not only will including those
Element, but also other key elements including being not expressly set out, or also include being this process, method, article or equipment
Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Also there is other identical element in process, method, article or equipment including the key element.Term " on ", " under " etc. refers to
The orientation or position relationship shown is, based on orientation shown in the drawings or position relationship, to be for only for ease of the description present invention and simplify
Description, rather than indicate or imply that the device or element of meaning must have specific orientation, with specific azimuth configuration and behaviour
Make, therefore be not considered as limiting the invention.Unless otherwise clearly defined and limited, term " installation ", " connected ",
" connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can be
Mechanically connect or electrically connect；Can be joined directly together, can also be indirectly connected to by intermediary, can be two
The connection of element internal.For the ordinary skill in the art, above-mentioned term can be understood at this as the case may be
Concrete meaning in invention.
In the specification of the present invention, numerous specific details are set forth.Although it is understood that, embodiments of the invention can
To be put into practice in the case of these no details.In some instances, known method, structure and skill is not been shown in detail
Art, so as not to obscure the understanding of this description.Similarly, it will be appreciated that disclose in order to simplify the present invention and helps to understand respectively
One or more of individual inventive aspect, above in the description of the exemplary embodiment of the present invention, each of the invention is special
Levy and be grouped together into sometimes in single embodiment, figure or descriptions thereof.However, should not be by the method solution of the disclosure
It is interpreted into the following intention of reflection：I.e. the present invention for required protection requirement is than the feature that is expressly recited in each claim more
Many features.More precisely, as the following claims reflect, inventive aspect is to be less than single reality disclosed above
Apply all features of example.Therefore, it then follows thus claims of embodiment are expressly incorporated in the embodiment,
Wherein each claim is in itself as the separate embodiments of the present invention.It should be noted that in the case where not conflicting, this
The feature in embodiment and embodiment in application can be mutually combined.The invention is not limited in any single aspect,
Any single embodiment is not limited to, any combination and/or the displacement of these aspects and/or embodiment is also not limited to.And
And, can be used alone the present invention each aspect and/or embodiment or with other one or more aspects and/or its implementation
Example is used in combination.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, or which part or all technical characteristic are entered
Row equivalent；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme, it all should cover among the claim of the present invention and the scope of specification.
Claims (10)
1. a kind of thermal imaging sensor pixel cell, it is characterised in that including：
Substrate, heat convergence component and heat absorption component；The heat absorption component be located at the substrate and heat convergence component it
Between；
The heat convergence component includes condenser lens；The condenser lens is embedded in hollow framework described in hanging be erected at
The top of heat absorption component；
The heat absorption component includes heat absorption plate and the temperature sensor positioned at the heat absorption plate surface；The heat absorption plate
The top of the substrate is vacantly erected at by the first support frame；
The condenser lens is used for the surface that heat radiation is converged to the heat absorption plate.
2. thermal imaging sensor pixel cell according to claim 1, it is characterised in that also include：Positioned at the substrate
Heat reflection component between heat absorption component；
The heat reflection component includes the heat reflection film layer being located between the substrate and heat absorption plate；The heat reflection film layer is used
In the heat radiation for transmiting the heat absorption plate is reflexed into the heat absorption plate.
3. thermal imaging sensor pixel cell according to claim 2, it is characterised in that
The condenser lens the heat absorption plate planar projection more than or equal to the heat absorption plate area；
The heat absorption plate is in face of the projection less than or equal to the heat reflection film layer where the heat reflection film layer in plane
Product.
4. thermal imaging sensor pixel cell according to claim 2, it is characterised in that the heat reflection film layer with it is described
The distance between heat absorption plate is 2-4 microns.
5. thermal imaging sensor pixel cell according to claim 1, it is characterised in that
The condenser lens is the dimpling lens of the hexagon with two-sided bulge-structure.
6. thermal imaging sensor pixel cell according to claim 1, it is characterised in that the heat absorption plate gathers with described
The distance between focus lens are a, 2f >=a；
Wherein, f is the focal length of the condenser lens.
7. thermal imaging sensor pixel cell according to claim 1, it is characterised in that the heat absorption plate gathers with described
The distance between focus lens are equal to the focal length of the condenser lens.
8. thermal imaging sensor pixel cell according to claim 1, it is characterised in that first support frame includes exhausted
Hot support arm and the first support column；The adiabatic support arm is used to fix the heat absorption plate, and first support column passes through branch
Support the top that the adiabatic support arm makes the heat absorption plate vacantly be erected at the substrate.
9. thermal imaging sensor pixel array according to claim 1, it is characterised in that also including lens supports post, institute
State condenser lens and the framework is supported by the lens supports post, so that the condenser lens is vacantly erected at the heat absorption
The top of plate.
10. a kind of thermal imaging sensor pixel array, it is characterised in that including described in multiple claim 1-9 any one
It is connected as between thermal imaging sensor pixel cell, the condenser lens of the multiple thermal imaging sensor unit by the framework
The same frame of the framework is shared between one, adjacent condenser lens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710076923.9A CN106949978A (en) | 2017-02-13 | 2017-02-13 | A kind of thermal imaging sensor pixel cell and its array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710076923.9A CN106949978A (en) | 2017-02-13 | 2017-02-13 | A kind of thermal imaging sensor pixel cell and its array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106949978A true CN106949978A (en) | 2017-07-14 |
Family
ID=59465494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710076923.9A Pending CN106949978A (en) | 2017-02-13 | 2017-02-13 | A kind of thermal imaging sensor pixel cell and its array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106949978A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493271A (en) * | 2018-03-13 | 2018-09-04 | 东南大学 | A kind of chip-scale superminiature refrigeration machine for non-refrigeration type infrared detector |
| CN110940695A (en) * | 2019-11-28 | 2020-03-31 | 航天特种材料及工艺技术研究所 | Heat gathering device |
| CN112414560A (en) * | 2020-10-12 | 2021-02-26 | 中国电子科技集团公司第十一研究所 | Cold head supporting structure |
| WO2021209817A1 (en) * | 2020-04-13 | 2021-10-21 | T-Smart Systems Llc | Structure and method of manufacturing for a hermetic housing enclosure for a thermal shock proof, zero thermal gradient imaging or sensing core |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6201243B1 (en) * | 1998-07-20 | 2001-03-13 | Institut National D'optique | Microbridge structure and method for forming the microbridge structure |
| US20070120059A1 (en) * | 2003-12-22 | 2007-05-31 | Universite Paul Sabatier (Toulouse 111) | Use of spinel ferrites as sensitive material for bolometric infrared detector devices |
| CN102280455A (en) * | 2011-05-11 | 2011-12-14 | 武汉高德红外股份有限公司 | Non-refrigeration infrared focal plane array seeker |
| CN103630246A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Uncooled infrared imaging focal plane array detector |
| CN103630242A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Uncooled infrared imaging focal plane array detector |
| CN104310300A (en) * | 2014-09-23 | 2015-01-28 | 杭州大立微电子有限公司 | Infrared detector integrated with pixel-level condensing lenses and preparation method thereof |
-
2017
- 2017-02-13 CN CN201710076923.9A patent/CN106949978A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6201243B1 (en) * | 1998-07-20 | 2001-03-13 | Institut National D'optique | Microbridge structure and method for forming the microbridge structure |
| US20070120059A1 (en) * | 2003-12-22 | 2007-05-31 | Universite Paul Sabatier (Toulouse 111) | Use of spinel ferrites as sensitive material for bolometric infrared detector devices |
| CN102280455A (en) * | 2011-05-11 | 2011-12-14 | 武汉高德红外股份有限公司 | Non-refrigeration infrared focal plane array seeker |
| CN103630246A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Uncooled infrared imaging focal plane array detector |
| CN103630242A (en) * | 2012-08-23 | 2014-03-12 | 中国科学院微电子研究所 | Uncooled infrared imaging focal plane array detector |
| CN104310300A (en) * | 2014-09-23 | 2015-01-28 | 杭州大立微电子有限公司 | Infrared detector integrated with pixel-level condensing lenses and preparation method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493271A (en) * | 2018-03-13 | 2018-09-04 | 东南大学 | A kind of chip-scale superminiature refrigeration machine for non-refrigeration type infrared detector |
| CN110940695A (en) * | 2019-11-28 | 2020-03-31 | 航天特种材料及工艺技术研究所 | Heat gathering device |
| CN110940695B (en) * | 2019-11-28 | 2022-04-26 | 航天特种材料及工艺技术研究所 | Heat gathering device |
| WO2021209817A1 (en) * | 2020-04-13 | 2021-10-21 | T-Smart Systems Llc | Structure and method of manufacturing for a hermetic housing enclosure for a thermal shock proof, zero thermal gradient imaging or sensing core |
| CN112414560A (en) * | 2020-10-12 | 2021-02-26 | 中国电子科技集团公司第十一研究所 | Cold head supporting structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101910575B1 (en) | Infrared detector and infrared image sensor | |
| CN106949978A (en) | A kind of thermal imaging sensor pixel cell and its array | |
| JP4677044B2 (en) | Dual band imaging device having a visible or SWIR detector combined with an uncooled LWIR detector | |
| CN106052883B (en) | Three layers of micro-bridge structure, three layers of uncooled microbolometer and preparation method thereof | |
| KR101922119B1 (en) | Infrared detector and method for detecting infrared using the same | |
| CN102280455B (en) | Non-refrigeration infrared focal plane array seeker | |
| US10585002B2 (en) | Micromechanical device for electromagnetic radiation sensing | |
| CN103199097A (en) | Pixel element structure and non-refrigeration infrared focal plane detector based on pixel element structure | |
| CN103575403A (en) | Terahertz focal plane array based on MEMS technology | |
| CN102874735B (en) | Two-material micro-cantilever, electromagnetic radiation detector and detection method | |
| US20130206989A1 (en) | Radiation Sensor | |
| US8440972B2 (en) | Radiation detector with microstructured silicon | |
| CN105527026A (en) | Pixel unit, infrared imaging detector provided with pixel unit and manufacturing process | |
| CN105486412A (en) | Uncooled infrared focal plane array detector with overlap vertical bridge legs | |
| CN202924718U (en) | Double-material micro-cantilever and electromagnetic radiation detector | |
| US5811807A (en) | Uncooled background limited detector and method | |
| JPH11148862A (en) | Sensor having bridge structure | |
| CN107990989A (en) | Thermopile IR detector and preparation method thereof | |
| CN102288297B (en) | Uncooled far infrared thermal imaging system | |
| JP3287729B2 (en) | Radiation detector | |
| US9018723B2 (en) | Infrared camera sensor | |
| CN202420685U (en) | Optical read-out heat-mechanical infrared detector structure | |
| JPH0249124A (en) | Thermopile | |
| US20050034749A1 (en) | Structure of thermopile sensor | |
| CN203116855U (en) | Uncooled infrared imaging focal plane array detector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170714 |