CN107968060B - Reaction tank for wafer etching - Google Patents
Reaction tank for wafer etching Download PDFInfo
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- CN107968060B CN107968060B CN201711166869.3A CN201711166869A CN107968060B CN 107968060 B CN107968060 B CN 107968060B CN 201711166869 A CN201711166869 A CN 201711166869A CN 107968060 B CN107968060 B CN 107968060B
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- guide rod
- wafer
- lifting arm
- guide
- etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Abstract
The invention belongs to the technical field of semiconductors, and particularly relates to a reaction tank for wafer etching. The reaction tank for wafer etching comprises a tank body, wherein a lifting arm, a transmission unit and a guide unit are arranged in the tank body, the lifting arm is of a hollow structure, the transmission unit is arranged in the lifting arm, the input end of the transmission unit is connected with a power source, the output end of the transmission unit is connected with one end of the guide unit, the other end of the guide unit penetrates through the lifting arm and can rotate with the lifting arm, and the guide unit penetrates through the other end of the lifting arm and is used for supporting a wafer and driving the wafer to rotate. By using the reaction tank for etching the wafer, the wafer in the etching process can be rotated, the surface of the wafer is effectively and uniformly etched, and the surface quality of the wafer is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a reaction tank for wafer etching.
Background
In the prior art, when a wafer is etched by a wet process, the whole wafer needs to be soaked in a wafer etching reaction tank and fixed on a wafer support. Because the acid liquor in the acid tank of the immersion cleaning machine is supplied from the bottom of the reaction tank and overflows from the top of the reaction tank, and the acid liquor reacts with the film on the wafer all the time in the process, the local concentration of the top of the acid tank is lower than that of the bottom of the acid tank, namely the acid liquor etching rate of the bottom of the acid tank is higher than that of the top of the acid tank. When the etching process time of the wafer is short, the etching nonuniformity of the wafer surface is not obvious, but when the wafer is soaked in the acid tank solution for a long time, the etching nonuniformity of the wafer surface is obvious, which is shown in that the etching rate of the wafer bottom is high and the etching rate of the wafer top is low.
Disclosure of Invention
The present invention is directed to solving at least one of the problems set forth above, and the object is achieved by the following means.
The invention provides a reaction tank for wafer etching, which comprises a tank body, wherein a lifting arm, a transmission unit and a guide unit are arranged in the tank body, the interior of the lifting arm is of a hollow structure, the transmission unit is arranged in the lifting arm, the input end of the transmission unit is connected with a power source, the output end of the transmission unit is connected with one end of the guide unit, the other end of the guide unit penetrates through the lifting arm and can rotate with the lifting arm, and the guide unit penetrates through the other end of the lifting arm and is used for supporting a wafer and driving the wafer to rotate.
Further, the transmission unit comprises a driving wheel and a driven wheel, the driving wheel is in transmission connection with the driven wheel through a belt, the driving wheel is connected with the power source, and the driven wheel is connected with one end of the guide unit.
Further, the radial dimension of the driving wheel is larger than that of the driven wheel.
Further, the surface of the belt is provided with a PFA acid-proof coating.
Furthermore, the guide unit comprises a first guide rod, a second guide rod and a third guide rod, the first end of the first guide rod is connected with the driven wheel, the second end of the first guide rod penetrates through the lifting arm and can rotate with the lifting arm, the first ends of the second guide rod and the third guide rod are also arranged in the lifting arm and can rotate with the lifting arm, and the second ends of the second guide rod and the third guide rod penetrate through the lifting arm and can support the wafer.
Further, an isosceles triangle is set among the first guide rod, the second guide rod and the third guide rod, and the second guide rod and the third guide rod are located at the same vertical height and are higher than the first guide rod.
Furthermore, sealing bearings are arranged on the first guide rod, the second guide rod and the third guide rod, and the sealing bearings are fixedly connected to the lifting arm.
Further, the lifting arm device further comprises a vent pipe, wherein the vent pipe can be communicated and connected with the interior of the lifting arm, and can be used for introducing nitrogen into the interior of the lifting arm.
Furthermore, the air pressure of the lifting arm after the nitrogen is introduced is 1.1-1.5 standard atmospheric pressures.
Furthermore, a plurality of positioning grooves capable of supporting the wafer are arranged on the outer circumferential surfaces of the first guide rod, the second guide rod and the third guide rod.
By using the reaction tank for etching the wafer, the wafer in the etching process can be rotated, the surface of the wafer is effectively and uniformly etched, and the surface quality of the wafer is improved.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic front view of an internal structure according to an embodiment of the present invention;
FIG. 2 is a side sectional view of the internal structure of the embodiment of FIG. 1;
fig. 3 is a schematic view of an internal structure of the lifting arm in the embodiment of fig. 1.
The reference symbols in the drawings denote the following:
100: a trough body;
10: a lifting arm;
20: transmission unit, 21: driving wheel, 22: drive wheel, 23: a belt;
30: guide unit, 31: first guide bar, 32: second guide bar, 33: a third guide bar;
40: sealing the bearing;
50: the guide bar link span.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Fig. 1 is a schematic front structural view of an internal structure according to an embodiment of the present invention. Fig. 2 is a side structural sectional view of the internal structure of the embodiment of fig. 1. Fig. 3 is a schematic view of an internal structure of the lifting arm in the embodiment of fig. 1. As shown in the figure, a reaction tank for wafer etching in this embodiment, including cell body 100, be equipped with lifting arm 10 in the cell body 100, transmission unit 20 and guide unit 30, the inside of lifting arm 10 is hollow structure, transmission unit 20 locates the inside of lifting arm 10, transmission unit 20's input links to each other with the power supply, transmission unit 20's output links to each other with guide unit 30's one end, guide unit 30's the other end pass lifting arm 10 and can and take place to rotate between the lifting arm 10, guide unit 30 passes the other end of lifting arm 10 and is used for supporting wafer 200 and drives wafer 200 and rotate.
As shown in fig. 2, the transmission unit 20 includes a driving pulley 21 and a driven pulley 22. The driving wheel 21 and the driven wheel 22 are in transmission connection through a belt 23, the driving wheel 21 is connected with a power source, and the driven wheel 22 is connected with one end of the guide unit 30.
The driving wheel 21 is connected with the output end of the power source, and the driving wheel 21 is driven to rotate by the power source. The rotation of the driving wheel 21 drives the driven wheel 22 to rotate through the belt 23, thereby driving the guide unit 30 to rotate together.
Further, the rotation rate of the guiding unit 30 needs to be adjusted according to the etching requirement of the wafer 200 during the acid bath process. In this embodiment, the radial dimension of the driving pulley 21 is larger than that of the driven pulley 22, so that the rotational speed of the power source is reduced and transmitted to the guide unit 30. The rotation speed of the guiding unit 30 should ensure that the wafer 200 on the guiding unit 30 can rotate at least one circle during the etching process of the wafer 200.
Further, the surface of the belt 23 is provided with a PFA acid-proof coating layer.
When the sealing effect between the guide unit 30 and the lifting arm 10 is deteriorated and an acid solution is mixed in the lifting arm 10, in order to prevent the acid solution from corroding the belt 23, a PFA acid-proof coating is provided on the surface of the belt 23, thereby improving the safety and reliability of the device.
As shown in fig. 3, the guide unit 30 in the present embodiment includes a first guide lever 31, a second guide lever 32, and a third guide lever 33. The first end of the first guide rod 31 is connected to the driven wheel 22, the second end of the first guide rod 31 passes through the lifting arm 10 and can rotate with the lifting arm 10, the first ends of the second guide rod 32 and the third guide rod 33 are also arranged inside the lifting arm 10 and can rotate with the lifting arm 10, and the second ends of the second guide rod 32 and the third guide rod 33 pass through the lifting arm 10 and can support the wafer 200.
In the present embodiment, the first ends of the first guide lever 31, the second guide lever 32, and the third guide lever 33 are all left ends of the positions shown in fig. 2, and the second ends of the first guide lever 31, the second guide lever 32, and the third guide lever 33 are all right ends of the positions shown in fig. 2. The wafer 200 can be supported among the first guide bar 31, the second guide bar 32, and the third guide bar 33, and the first guide bar 31 rotates with the follower 22 and serves as a power output shaft for rotating the wafer 200. When the wafer 200 rotates, because a certain friction exists between the surface of the wafer 200 and the second guide rod 32 and the third guide rod 33, and the second guide rod 32 and the third guide rod 33 can rotate with the lifting arm 10, the wafer 200 can drive the second guide rod 32 and the third guide rod 33 to rotate together while rotating.
Further, in order to better complete the supporting and rotating of the wafer 200, the first guide bar 31, the second guide bar 32, and the third guide bar 33 are configured as an isosceles triangle. The second guide bar 32 and the third guide bar 33 are at the same vertical height and higher than the first guide bar 31.
The isosceles triangle is set among the first guide rod 31, the second guide rod 32 and the third guide rod 33, and the first guide rod 31 is lower than the second guide rod 32 and the third guide rod 33, so that the uniform stress of the wafer 200 in the rotation process is facilitated, and the etching on the surface of the wafer 200 is more uniform.
Further, since the first guide bar 31, the second guide bar 32, and the third guide bar 33 are too long to protrude from the lift arm 10, the swing is likely to occur during the rotation. In order to ensure the etching uniformity and reliability of the wafer 200, the second ends of the first guide bar 31, the second guide bar 32 and the third guide bar 33 are coupled to the guide bar holder 50. As shown in fig. 1, the top of the guide bar fixing frame 50 is provided with bearings capable of being respectively matched with the second ends of the first guide bar 31, the second guide bar 32 and the third guide bar 33, and the second ends of the first guide bar 31, the second guide bar 32 and the third guide bar 33 pass through the bearings, so that the mutual positions among the first guide bar 31, the second guide bar 32 and the third guide bar 33 are fixed, and the rotation of the first guide bar 31, the second guide bar 32 and the third guide bar 33 can be realized.
As shown in fig. 2, the first guide rod 31, the second guide rod 32 and the third guide rod 22 in this embodiment are all provided with a sealing bearing 40, and the sealing bearing 40 is fixedly connected to the lifting arm 10.
The first guide rod 31, the second guide rod 32 and the third guide rod 33 pass through the seal bearing 40, thereby completing smooth rotation of the first guide rod 31, the second guide rod 32 and the third guide rod 33.
In the present embodiment, since the first guide bar 31, the second guide bar 32, and the third guide bar 33 are in the acid solution for a long period of time, in order to improve the reliability of the apparatus, the surfaces of the first guide bar 31, the second guide bar 32, and the third guide bar 33 are coated with the corrosion-resistant coating. And the driving pulley 21, the driven pulley 22, and the seal bearing 40 are coated with the same corrosion-resistant coating as the surfaces of the first guide bar 31, the second guide bar 32, and the third guide bar 32.
Further, the lifting arm 10 in this embodiment is further provided with a vent pipe. The vent pipe can be connected to the inside of the lift arm 10, and can introduce nitrogen gas into the inside of the lift arm 10.
In order to prevent insufficient sealing between the seal bearing 40 and the lift arm 10 and to prevent the acid solution from entering the interior of the lift arm 10 and corroding the belt 23, nitrogen gas is introduced into the lift arm 10 through a vent pipe. Even if the sealing performance between the sealing bearing 40 and the lifting arm 10 is poor, the acid solution can be prevented from entering the lifting arm 10 by the air pressure existing after the nitrogen is introduced into the lifting arm 10, and the reliability of the equipment is improved. Further, in the embodiment, the pressure of the nitrogen gas introduced into the lift arm 10 is 1.1 to 1.5 standard atmospheric pressures.
Further, in order to drive the wafer 200 to rotate, a plurality of positioning grooves capable of fixedly supporting the wafer 200 are disposed on the outer circumferential surfaces of the first guide rod 31, the second guide rod 32 and the third guide rod 33. The arrangement of the positioning grooves can enable the first guide rod 31, the second guide rod 32 and the third guide rod 33 to drive the wafer 200 to rotate, and meanwhile, the wafers 200 on each guide rod can be prevented from moving to affect the etching quality of the wafers 200.
By using the reaction tank for etching the wafer, the wafer in the etching process can be rotated, the surface of the wafer is effectively and uniformly etched, and the surface quality of the wafer is improved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (8)
1. A reaction tank for wafer etching is characterized by comprising a tank body, wherein a lifting arm, a transmission unit and a guide unit are arranged in the tank body, the interior of the lifting arm is of a hollow structure, the transmission unit is arranged in the lifting arm, the input end of the transmission unit is connected with a power source, the output end of the transmission unit is connected with one end of the guide unit, the other end of the guide unit penetrates through the lifting arm and can rotate with the lifting arm, and the guide unit penetrates through the other end of the lifting arm and is used for supporting a wafer and driving the wafer to rotate;
still include the breather pipe, the breather pipe can with the inside of lifing arm communicates with each other and is connected, and can to the inside of lifing arm lets in nitrogen gas, the atmospheric pressure after letting in nitrogen gas in the lifing arm is 1.1 ~ 1.5 standard atmospheric pressure.
2. The reaction tank for wafer etching as claimed in claim 1, wherein the transmission unit comprises a driving wheel and a driven wheel, the driving wheel and the driven wheel are connected through a belt in a transmission manner, the driving wheel is connected with the power source, and the driven wheel is connected with the one end of the guide unit.
3. The reaction tank for wafer etching as recited in claim 2, wherein a radial dimension of the driving wheel is larger than a radial dimension of the driven wheel.
4. The reaction tank for wafer etching as claimed in claim 2, wherein a surface of the belt is provided with a PFA acid-proof coating.
5. The reaction tank for etching the wafer as claimed in any one of claims 2 to 4, wherein the guide unit comprises a first guide rod, a second guide rod and a third guide rod, a first end of the first guide rod is connected with the driven wheel, a second end of the first guide rod passes through the lifting arm and can rotate with the lifting arm, first ends of the second guide rod and the third guide rod are also arranged in the lifting arm and can rotate with the lifting arm, and second ends of the second guide rod and the third guide rod pass through the lifting arm and can support the wafer.
6. The reaction tank for etching the wafer as claimed in claim 5, wherein the first guide rod, the second guide rod and the third guide rod are set to be isosceles triangles, and the second guide rod and the third guide rod are at the same vertical height and higher than the first guide rod.
7. The reaction tank for etching the wafer as claimed in claim 6, wherein the first guide rod, the second guide rod and the third guide rod are all provided with sealing bearings, and the sealing bearings are fixedly connected to the lifting arm.
8. The reaction tank for etching the wafer as claimed in claim 5, wherein a plurality of positioning grooves capable of supporting the wafer are formed on the outer circumferential surfaces of the first guide bar, the second guide bar and the third guide bar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711166869.3A CN107968060B (en) | 2017-11-21 | 2017-11-21 | Reaction tank for wafer etching |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711166869.3A CN107968060B (en) | 2017-11-21 | 2017-11-21 | Reaction tank for wafer etching |
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| CN107968060A CN107968060A (en) | 2018-04-27 |
| CN107968060B true CN107968060B (en) | 2020-05-12 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200006093A1 (en) * | 2018-06-29 | 2020-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet bench structure |
| CN110364421B (en) * | 2019-07-17 | 2022-02-25 | 武汉新芯集成电路制造有限公司 | Wet etching equipment and wet etching method |
| CN110931401B (en) * | 2020-01-02 | 2022-06-03 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer box rotating device and wafer box rotating and lifting equipment |
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| JPS61214436A (en) * | 1985-03-20 | 1986-09-24 | Toshiba Corp | Method and device for etching semiconductor wafer |
| KR20060078261A (en) * | 2004-12-31 | 2006-07-05 | 동부일렉트로닉스 주식회사 | Wet etching apparatus |
| CN204088282U (en) * | 2014-09-23 | 2015-01-07 | 浙江昊能光电有限公司 | A kind of polysilicon chip cleaning machine automatic basket device |
| CN204361059U (en) * | 2014-12-23 | 2015-05-27 | 冠礼控制科技（上海）有限公司 | Silicon chip spinning and oscillating mechanism |
| CN105336649A (en) * | 2015-11-27 | 2016-02-17 | 上海广奕电子科技股份有限公司 | Wafer corrosion device |
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| CN107968060A (en) | 2018-04-27 |
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