CN107968049A - 一种太阳能电池片的切割方法 - Google Patents
一种太阳能电池片的切割方法 Download PDFInfo
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- CN107968049A CN107968049A CN201711194338.5A CN201711194338A CN107968049A CN 107968049 A CN107968049 A CN 107968049A CN 201711194338 A CN201711194338 A CN 201711194338A CN 107968049 A CN107968049 A CN 107968049A
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- cell piece
- prismatic battery
- cutting
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- groove body
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- 238000005520 cutting process Methods 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000003292 glue Substances 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 238000004090 dissolution Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 239000000084 colloidal system Substances 0.000 abstract description 19
- 239000012634 fragment Substances 0.000 abstract description 4
- 238000003825 pressing Methods 0.000 description 17
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004568 cement Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000034303 cell budding Effects 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002224 dissection Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711194338.5A CN107968049A (zh) | 2017-11-24 | 2017-11-24 | 一种太阳能电池片的切割方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711194338.5A CN107968049A (zh) | 2017-11-24 | 2017-11-24 | 一种太阳能电池片的切割方法 |
Publications (1)
Publication Number | Publication Date |
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CN107968049A true CN107968049A (zh) | 2018-04-27 |
Family
ID=61997721
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201711194338.5A Pending CN107968049A (zh) | 2017-11-24 | 2017-11-24 | 一种太阳能电池片的切割方法 |
Country Status (1)
Country | Link |
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CN (1) | CN107968049A (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109737867A (zh) * | 2018-11-22 | 2019-05-10 | 合肥国轩高科动力能源有限公司 | 一种观察电芯内部结构的方法 |
CN110722231A (zh) * | 2018-07-17 | 2020-01-24 | 鸿富锦精密工业(衡阳)有限公司 | 线切割方法 |
CN111370536A (zh) * | 2020-03-19 | 2020-07-03 | 浙江晶科能源有限公司 | 一种晶硅电池热诱导裂片方法 |
CN112614796A (zh) * | 2020-12-16 | 2021-04-06 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | 一种电池片批量切割装置 |
US11127871B2 (en) | 2018-10-17 | 2021-09-21 | Sunpower Corporation | Structures and methods for forming electrodes of solar cells |
CN116140262A (zh) * | 2023-02-08 | 2023-05-23 | 广东金晟新能源股份有限公司 | 一种用于电池模板的电芯取出装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102092102A (zh) * | 2010-10-08 | 2011-06-15 | 常州天合光能有限公司 | 晶块粘棒切片工艺 |
CN102148166A (zh) * | 2010-02-04 | 2011-08-10 | 力成科技股份有限公司 | 多层晶片堆叠间隙的填充方法与结构 |
CN102820381A (zh) * | 2012-08-31 | 2012-12-12 | 重庆师范大学 | 采用叠层法制作高电压输出太阳能电池的方法 |
US20140263524A1 (en) * | 2013-03-12 | 2014-09-18 | Solarworld Industries America Inc. | Method and device for cleaving wafers |
WO2015006382A1 (en) * | 2013-07-08 | 2015-01-15 | Solexel, Inc. | Thin film solar cell lamination stack for high volume manufacturing |
CN106696104A (zh) * | 2016-12-16 | 2017-05-24 | 苏州阿特斯阳光电力科技有限公司 | 粘棒方法及切割铸造多晶硅棒的方法 |
-
2017
- 2017-11-24 CN CN201711194338.5A patent/CN107968049A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102148166A (zh) * | 2010-02-04 | 2011-08-10 | 力成科技股份有限公司 | 多层晶片堆叠间隙的填充方法与结构 |
CN102092102A (zh) * | 2010-10-08 | 2011-06-15 | 常州天合光能有限公司 | 晶块粘棒切片工艺 |
CN102820381A (zh) * | 2012-08-31 | 2012-12-12 | 重庆师范大学 | 采用叠层法制作高电压输出太阳能电池的方法 |
US20140263524A1 (en) * | 2013-03-12 | 2014-09-18 | Solarworld Industries America Inc. | Method and device for cleaving wafers |
WO2015006382A1 (en) * | 2013-07-08 | 2015-01-15 | Solexel, Inc. | Thin film solar cell lamination stack for high volume manufacturing |
CN106696104A (zh) * | 2016-12-16 | 2017-05-24 | 苏州阿特斯阳光电力科技有限公司 | 粘棒方法及切割铸造多晶硅棒的方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110722231A (zh) * | 2018-07-17 | 2020-01-24 | 鸿富锦精密工业(衡阳)有限公司 | 线切割方法 |
US11127871B2 (en) | 2018-10-17 | 2021-09-21 | Sunpower Corporation | Structures and methods for forming electrodes of solar cells |
CN109737867A (zh) * | 2018-11-22 | 2019-05-10 | 合肥国轩高科动力能源有限公司 | 一种观察电芯内部结构的方法 |
CN111370536A (zh) * | 2020-03-19 | 2020-07-03 | 浙江晶科能源有限公司 | 一种晶硅电池热诱导裂片方法 |
CN112614796A (zh) * | 2020-12-16 | 2021-04-06 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | 一种电池片批量切割装置 |
CN116140262A (zh) * | 2023-02-08 | 2023-05-23 | 广东金晟新能源股份有限公司 | 一种用于电池模板的电芯取出装置 |
CN116140262B (zh) * | 2023-02-08 | 2023-08-18 | 广东金晟新能源股份有限公司 | 一种用于电池模板的电芯取出装置 |
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CB02 | Change of applicant information |
Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Applicant after: CSI Cells Co.,Ltd. Applicant after: CANADIAN SOLAR MANUFACTURING (LUOYANG) Inc. Applicant after: Atlas sunshine Power Group Co.,Ltd. Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Applicant before: CSI Cells Co.,Ltd. Applicant before: CANADIAN SOLAR MANUFACTURING (LUOYANG) Inc. Applicant before: CSI SOLAR POWER GROUP Co.,Ltd. |
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180427 |
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RJ01 | Rejection of invention patent application after publication |