CN107946327A - 一种背照式cmos图像传感器结构的制作方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 238000002955 isolation Methods 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims description 21
- 238000011049 filling Methods 0.000 claims description 13
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000000975 dye Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract description 6
- 238000010276 construction Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- -1 tetramethyl hydrogen Chemical compound 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开了一种背照式CMOS图像传感器结构的制作方法,包括:提供一已完成正面工艺和背部减薄的硅衬底;在所述硅衬底背面形成网格状的深槽;在所述深槽的内壁表面形成绝缘层,以形成网格状的深槽隔离结构;在所述绝缘层的表面形成扩散阻挡层;在所述深槽中进行金属填充,以形成金属栅与深槽隔离相结合的网格状复合结构。本发明采用对深槽隔离结构和金属栅一次成型的方法,可避开传统工艺中深槽隔离结构与金属栅两者需要高精度对准的要求,并可使深槽隔离结构同时起到金属栅的作用,从而不仅提高了材料的利用率,节约了成本,还降低了工艺难度,提高了生产效率。
Description
技术领域
本发明涉及CMOS图像传感器制造工艺技术领域,更具体地,涉及一种背照式CMOS图像传感器结构的制作方法。
背景技术
图像传感器是用于感知光信号的器件。其中互补金属氧化物半导体(CMOS)图像传感器被广泛应用于电子设备中,如数码相机、手机摄像头等。这些器件应用了衬底上的像素阵列结构(通常包括光电二极管和晶体管)来感知照射在衬底上的光信号并将感知到的信号转变为电信号。
背照式CMOS图像传感器结构是一种较新的传感器结构。背照式CMOS图像传感器可从背后接收入射光,从而获得更大的感光量。因此,与传统的正入射式CMOS图像传感器相比,背照式CMOS图像传感器有着更好的表现,尤其是在低强度的光照条件下。
为了提高图像质量,图像传感器需要减少光信号串扰和电信号串扰,相对应地需要采用金属栅(Metal Grid)和深槽隔离(DTI)工艺。当前的背照式CMOS图像传感器制作工艺中,通常包括DTI的刻蚀与填充,抗反射涂层(ARC)的沉积,Metal Grid的沉积与图形化,颜色滤镜(CF)的制作和微透镜(Micro-lens)的制作等步骤。其中,DTI工艺通常在抗反射涂层之前完成,包括硅衬底的小尺寸(<1μm)、高深宽比(>10:1)刻蚀,绝缘层填充,扩散阻挡层填充,DTI材料填充等步骤,用于防止电信号串扰;Metal Grid工艺通常在抗反射涂层之后完成,包括抗反射涂层上的金属沉积,金属图形化及刻蚀等步骤,用于防止光信号串扰。
然而,上述现有的DTI和Metal Grid这两步用于防止串扰的制作工艺,使得整个工艺更加复杂,耗时更长,并且成本更高。除此之外,这两步工艺还需要彼此之间高精度的对准,造成进一步增加了整体工艺难度,降低了成品率。
发明内容
本发明的目的在于克服现有技术存在的上述缺陷,提供一种背照式CMOS图像传感器结构的制作方法。
为实现上述目的,本发明的技术方案如下:
一种背照式CMOS图像传感器结构的制作方法,包括以下步骤:
步骤S01:提供一已完成正面工艺和背部减薄的硅衬底;
步骤S02:在所述硅衬底背面形成网格状的深槽;
步骤S03:在所述深槽的内壁表面形成绝缘层,以形成网格状的深槽隔离结构;
步骤S04:在所述绝缘层的表面形成扩散阻挡层;
步骤S05:在所述深槽中进行金属填充,以形成金属栅与深槽隔离相结合的网格状复合结构。
优选地,步骤S01中,所述正面工艺包括在硅衬底正面形成光电二极管阵列;步骤S02中,形成的网格状的所述深槽位于光电二极管阵列中各光电二极管之间的位置。
优选地,所述深槽的底面与光电二极管的顶面上下交错。
优选地,还包括:
步骤S06:对所述硅衬底背面进行刻蚀,在深槽隔离结构的网格中形成凹槽;
步骤S07:在所述硅衬底背面表面覆盖抗反射层;
步骤S08:在所述凹槽中进行颜色滤镜材料填充,形成颜色滤镜。
优选地,步骤S02中,通过光刻和刻蚀工艺,在所述硅衬底背面形成网格状的深槽,刻蚀时的深宽比至少为10:1。
优选地,步骤S02之后,还包括去除硅衬底上的光刻胶,并进行清洗。
优选地,步骤S03中,通过CVD或ALD方法,在所述深槽的内壁表面沉积形成绝缘层;步骤S04中,通过CVD、PVD、ALD或溅射方法,在所述绝缘层的表面形成扩散阻挡层。
优选地,步骤S05中,通过CVD或PVD方法,在所述深槽中进行金属W的填充,然后,采用CMP技术进行表面平坦化处理,去除表面多余的金属W以及扩散阻挡层、绝缘层材料。
优选地,步骤S06中,利用网格状的深槽隔离结构为掩膜,对硅衬底背面进行湿法刻蚀。
优选地,步骤S07中,通过CVD或ALD方法,在所述硅衬底背面表面全面沉积抗反射层,将硅衬底背面表面及深槽隔离结构表面、侧壁全部覆盖;步骤S08中,通过旋涂方法,在所述凹槽中填充带染料的光刻胶作为颜色滤镜材料。
从上述技术方案可以看出,本发明利用形成的深槽隔离结构作为硅衬底背面刻蚀时的阻挡层,形成了自对准的刻蚀,因而减少了光刻步骤,节约了成本;与传统的深槽隔离结构和金属栅制作工艺方法相比,本发明对深槽隔离结构和金属栅采用了一次成型的方法,可使工艺步骤得到减少,所形成的金属栅与深槽隔离相结合的网格状复合结构同时起到了金属栅和深槽隔离结构的作用,避开了传统工艺中深槽隔离结构与金属栅两者需要高精度对准的要求,从而不仅提高了材料的利用率,节约了成本,还降低了工艺难度,提高了生产效率;此外,采用本发明还可同时实现颜色滤镜的嵌入式结构,使得感光区域与入射光平面距离更近,因此器件感光效果更好。
附图说明
图1是本发明一较佳实施例的一种背照式CMOS图像传感器结构的制作方法流程图;
图2-图6是根据图1的方法制作背照式CMOS图像传感器结构的工艺步骤示意图。
具体实施方式
下面结合附图,对本发明的具体实施方式作进一步的详细说明。
需要说明的是,在下述的具体实施方式中,在详述本发明的实施方式时,为了清楚地表示本发明的结构以便于说明,特对附图中的结构不依照一般比例绘图,并进行了局部放大、变形及简化处理,因此,应避免以此作为对本发明的限定来加以理解。
在以下本发明的具体实施方式中,请参阅图1,图1是本发明一较佳实施例的一种背照式CMOS图像传感器结构的制作方法流程图;同时,请参阅图2-图6,图2-图6是根据图1的方法制作背照式CMOS图像传感器结构的工艺步骤示意图。如图1所示,本发明的一种背照式CMOS图像传感器结构的制作方法,包括以下步骤:
步骤S01:提供一已完成正面工艺和背部减薄的硅衬底。
请参阅图2。可利用背照式CMOS图像传感器的传统工艺,在硅衬底(硅片)100正面(图示为下方表面)完成正面工艺,包括在硅衬底正面表面形成光电二极管(PD)101阵列;然后,对硅衬底的背部进行减薄。此时硅片的厚度可大约剩余3~4μm。
步骤S02:在所述硅衬底背面形成网格状的深槽。
请参阅图3。接着,在硅衬底背面(图示为上方表面)上,可通过光刻和干法刻蚀工艺,在所述硅衬底背面形成网格状的深槽102(俯视结构)。形成的网格状的所述深槽102位于光电二极管阵列中各光电二极管101之间的位置;并且,所述深槽的底面与光电二极管的顶面之间可形成上下位置的交错。
上述形成的网格(深槽)的宽度比如可为0.25μm;深槽的深度比如可为2.5μm。刻蚀时的深宽比需要达到至少约为10:1。
之后,去除硅衬底上光刻、刻蚀后剩余的光刻胶,并进行清洗。
步骤S03:在所述深槽的内壁表面形成绝缘层,以形成网格状的深槽隔离结构。
请继续参阅图3。接下来,可采用CVD(化学气相沉积)或ALD(原子层沉积)等方法,在所述深槽的内壁表面沉积一层绝缘氧化层,一般可为SiO2,但也可以使用其他绝缘材料如SiN等,形成绝缘层201,从而形成网格状的深槽隔离(DTI)结构。
步骤S04:在所述绝缘层的表面形成扩散阻挡层。
请继续参阅图3。然后,可采用CVD、PVD(物理气相沉积)、ALD或溅射等方法,在所述绝缘层的表面继续沉积扩散阻挡层材料,一般可为Ti、Ta及它们的氮化物,也可以使用一些High K(高介电常数)材料,如HfO2,Al2O3等,形成扩散阻挡层301。
步骤S05:在所述深槽中进行金属填充,以形成金属栅与深槽隔离相结合的网格状复合结构。
请继续参阅图3。之后,可采用CVD或PVD等方法,在内壁表面沉积有绝缘层和扩散阻挡层的所述深槽中继续进行栅极金属401的填充,以形成金属栅(Metal Grid)。金属材料可以用W,因为W有很高的光反射率,同时W有着较好的深槽填充能力。但也可以用其他合适的材料。
在金属填充完后,可采用CMP(化学机械研磨)技术进行表面平坦化处理,去除硅衬底背面表面多余的金属W以及扩散阻挡层、绝缘层材料,使得表面高度基本一致。
上述形成的金属栅与深槽隔离相结合的网格状复合结构,同时起到了金属栅(Metal Grid)和深槽隔离结构(DTI)的作用;并且,本发明对深槽隔离结构和金属栅的制作采用了一次成型的方法,可使工艺步骤得到减少。
请继续参阅图1。本发明的一种背照式CMOS图像传感器结构的制作方法,还可继续包括以下步骤:
步骤S06:对所述硅衬底背面进行刻蚀,在深槽隔离结构的网格中形成凹槽;
请参阅图4。接下来,需要对硅衬底背面进行刻蚀。可利用网格状的深槽隔离结构为掩膜,对硅衬底背面进行湿法刻蚀,形成凹槽103。此处使用湿法刻蚀是为了避免干法刻蚀对硅衬底造成的损伤。刻蚀使用的化学剂需要对深槽隔离结构中金属填充材料、绝缘氧化层材料和扩散阻挡层材料没有或只有很小的影响。常用的刻蚀剂可包括TMAH(四甲基氢氧化铵),但也可以使用其他符合条件的刻蚀剂。刻蚀速率可以控制得较慢,来控制刻蚀深度。刻蚀深度大约可为0.5~1μm;刻蚀完后,形成的凹槽底部(即剩余的硅衬底背面表面)与硅片正面表面之间的距离一般可为2.5~3μm。
步骤S07:在所述硅衬底背面表面覆盖抗反射层;
请参阅图5。接下来,可采用CVD或ALD等方法,在所述硅衬底背面表面全面沉积形成抗反射层(ARC)501,将硅衬底背面表面(即凹槽底面)及深槽隔离结构顶部表面、露出硅衬底背面表面以上的侧壁(即凹槽侧壁)全部覆盖。
ARC层的材料一般包括HfO2,Al2O3,Ta2O5,ZnO等,同时也可以是以上述两种或几种材料形成的叠加结构。
步骤S08:在所述凹槽中进行颜色滤镜材料填充,形成颜色滤镜。
请参阅图6。之后,可通过旋涂方法,在形成的凹槽结构中填充颜色滤镜材料601,一般可使用带染料的光刻胶作为颜色滤镜材料,但也可以使用其他常用的颜色滤镜材料以及其他常用的填充方法,以形成颜色滤镜(CFA)。
以形成的上述结构为基础,即可继续进行微透镜(Micro-lens)等背照式CMOS图像传感器其他结构的制作步骤。
综上所述,从上述技术方案可以看出,本发明利用形成的深槽隔离结构作为硅衬底背面刻蚀时的阻挡层,形成了自对准的刻蚀,因而减少了光刻步骤,节约了成本;与传统的深槽隔离结构和金属栅制作工艺方法相比,本发明对深槽隔离结构和金属栅采用了一次成型的方法,可使工艺步骤得到减少,所形成的金属栅与深槽隔离相结合的网格状复合结构同时起到了金属栅和深槽隔离结构的作用,避开了传统工艺中深槽隔离结构与金属栅两者需要高精度对准的要求,从而不仅提高了材料的利用率,节约了成本,还降低了工艺难度,提高了生产效率;此外,采用本发明还可同时实现颜色滤镜的嵌入式结构,使得感光区域与入射光平面距离更近,因此器件感光效果更好。
以上所述的仅为本发明的优选实施例,所述实施例并非用以限制本发明的专利保护范围,因此凡是运用本发明的说明书及附图内容所作的等同结构变化,同理均应包含在本发明的保护范围内。
Claims (10)
1.一种背照式CMOS图像传感器结构的制作方法,其特征在于,包括以下步骤:
步骤S01:提供一已完成正面工艺和背部减薄的硅衬底;
步骤S02:在所述硅衬底背面形成网格状的深槽;
步骤S03:在所述深槽的内壁表面形成绝缘层,以形成网格状的深槽隔离结构;
步骤S04:在所述绝缘层的表面形成扩散阻挡层;
步骤S05:在所述深槽中进行金属填充,以形成金属栅与深槽隔离相结合的网格状复合结构。
2.根据权利要求1所述的背照式CMOS图像传感器结构的制作方法,其特征在于,步骤S01中,所述正面工艺包括在硅衬底正面形成光电二极管阵列;步骤S02中,形成的网格状的所述深槽位于光电二极管阵列中各光电二极管之间的位置。
3.根据权利要求2所述的背照式CMOS图像传感器结构的制作方法,其特征在于,所述深槽的底面与光电二极管的顶面上下交错。
4.根据权利要求1所述的背照式CMOS图像传感器结构的制作方法,其特征在于,还包括:
步骤S06:对所述硅衬底背面进行刻蚀,在深槽隔离结构的网格中形成凹槽;
步骤S07:在所述硅衬底背面表面覆盖抗反射层;
步骤S08:在所述凹槽中进行颜色滤镜材料填充,形成颜色滤镜。
5.根据权利要求1所述的背照式CMOS图像传感器结构的制作方法,其特征在于,步骤S02中,通过光刻和刻蚀工艺,在所述硅衬底背面形成网格状的深槽,刻蚀时的深宽比至少为10:1。
6.根据权利要求5所述的背照式CMOS图像传感器结构的制作方法,其特征在于,步骤S02之后,还包括去除硅衬底上的光刻胶,并进行清洗。
7.根据权利要求1所述的背照式CMOS图像传感器结构的制作方法,其特征在于,步骤S03中,通过CVD或ALD方法,在所述深槽的内壁表面沉积形成绝缘层;步骤S04中,通过CVD、PVD、ALD或溅射方法,在所述绝缘层的表面形成扩散阻挡层。
8.根据权利要求1所述的背照式CMOS图像传感器结构的制作方法,其特征在于,步骤S05中,通过CVD或PVD方法,在所述深槽中进行金属W的填充,然后,采用CMP技术进行表面平坦化处理,去除表面多余的金属W以及扩散阻挡层、绝缘层材料。
9.根据权利要求4所述的背照式CMOS图像传感器结构的制作方法,其特征在于,步骤S06中,利用网格状的深槽隔离结构为掩膜,对硅衬底背面进行湿法刻蚀。
10.根据权利要求4所述的背照式CMOS图像传感器结构的制作方法,其特征在于,步骤S07中,通过CVD或ALD方法,在所述硅衬底背面表面全面沉积抗反射层,将硅衬底背面表面及深槽隔离结构表面、侧壁全部覆盖;步骤S08中,通过旋涂方法,在所述凹槽中填充带染料的光刻胶作为颜色滤镜材料。
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