CN107919305A - 一种金属膜剥离清洗方法 - Google Patents

一种金属膜剥离清洗方法 Download PDF

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CN107919305A
CN107919305A CN201711192634.1A CN201711192634A CN107919305A CN 107919305 A CN107919305 A CN 107919305A CN 201711192634 A CN201711192634 A CN 201711192634A CN 107919305 A CN107919305 A CN 107919305A
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wafer
peels
metal film
cleaning
transferred
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王耀斌
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Shaanxi Shengmai Petroleum Co Ltd
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Shaanxi Shengmai Petroleum Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本发明涉及一种电子制造设备技术领域，具体涉及一种金属膜剥离清洗方法。一种金属膜剥离清洗方法，包括以下步骤：（1）将装有晶圆片的上片盒放到上片位置；（2）对晶圆片位置、数量进行扫描记忆；（3）依次从上片盒中吸附取上晶圆片，传输到化学液浸泡槽；（4）从浸泡槽附取上晶圆片，经CCD中心定位后，传输到剥离腔体吸盘上，进行金属膜剥离；（5）完成剥离工艺后传输到清洗腔的卡盘上，进行自动DI水清洗、吹氮气和甩干等工艺；（6）将晶圆片取出放到收片片盒中，完成清洗过程。本发明使敏感的半导体器件表面的污染减到最小程度，从而大幅度地改善器件性能，提高产品的可靠性和稳定性。

Description

一种金属膜剥离清洗方法
技术领域
本发明涉及一种电子制造设备技术领域，具体涉及一种金属膜剥离清洗方法。
背景技术
随着微电子新材料的使用及器件特征尺寸进一步缩小(进入65～90 nm)，对半导体器件的性能、可靠性和稳定性的要求越来越高，传统的槽式批处理清洗技术在诸多工艺因素的驱动下已难以适应。
发明内容
本发明旨在提出一种金属膜剥离清洗方法。
本发明的技术方案在于：
一种金属膜剥离清洗方法，包括以下步骤：
（1）将装有晶圆片的上片盒放到上片位置；
（2）对晶圆片位置、数量进行扫描记忆；
（3）依次从上片盒中吸附取上晶圆片，传输到化学液浸泡槽；
（4）从浸泡槽附取上晶圆片，经CCD中心定位后，传输到剥离腔体吸盘上，进行金属膜剥离；
（5）完成剥离工艺后传输到清洗腔的卡盘上，进行自动DI水清洗、吹氮气和甩干等工艺；
（6）将晶圆片取出放到收片片盒中，完成清洗过程。
优选地，所述的金属剥离步骤为：基层清洗、镀金属膜、涂光阻胶、去胶、刻蚀以及曝光、显影。
优选地，所述的DI水清洗水兆声喷头震荡频率为1MHz。
优选地，所述的干燥的热氮气温度范围为80℃±5℃。
本发明的技术效果在于：
本发明使敏感的半导体器件表面的污染减到最小程度，从而大幅度地改善器件性能，提高产品的可靠性和稳定性。
具体实施方式
一种金属膜剥离清洗方法，包括以下步骤：
（1）将装有晶圆片的上片盒放到上片位置；
（2）对晶圆片位置、数量进行扫描记忆；
（3）依次从上片盒中吸附取上晶圆片，传输到化学液浸泡槽；
（4）从浸泡槽附取上晶圆片，经CCD中心定位后，传输到剥离腔体吸盘上，进行金属膜剥离；
（5）完成剥离工艺后传输到清洗腔的卡盘上，进行自动DI水清洗、吹氮气和甩干等工艺；
（6）将晶圆片取出放到收片片盒中，完成清洗过程。
其中，所述的金属剥离步骤为：基层清洗、镀金属膜、涂光阻胶、去胶、刻蚀以及曝光、显影。
DI水清洗水兆声喷头震荡频率为1MHz。
干燥的热氮气温度范围为80℃±5℃。
工作原理是开机后，将装有晶圆片的上片盒放到上片位置，并输出有上片盒信号，一切准备就绪后，启动自动运行程序，2号机械手进行晶圆片位置、数量扫描记忆，确认后号机械手依次从上片盒中吸附取上晶圆片，传输到化学液浸泡槽，浸泡槽片夹有上下抖动、反转功能，4号机械手从浸泡槽附取上晶圆片，经CCD中心定位后，传输到剥离腔体吸盘上，进行金属膜剥离工艺，完成剥离工艺后传输到清洗腔的卡盘上，进行自动DI水清洗、吹氮气和甩干等工艺，清洗步骤结束后，号机械手(洁净手)将晶圆片取出放到收片片盒中，该设备采用4个机械手，从上下片和3个工艺步骤同时进行，提高效率，以上各工步速度、时间等参数可设定。整个过程自动控制，也可单步操作；化学液在线加热、循环、过滤再利用，设备配有自动灭火系统。

Claims (4)

1.一种金属膜剥离清洗方法，其特征在于：包括以下步骤：
（1）将装有晶圆片的上片盒放到上片位置；
（2）对晶圆片位置、数量进行扫描记忆；
（3）依次从上片盒中吸附取上晶圆片，传输到化学液浸泡槽；
（4）从浸泡槽附取上晶圆片，经CCD中心定位后，传输到剥离腔体吸盘上，进行金属膜剥离；
（5）完成剥离工艺后传输到清洗腔的卡盘上，进行自动DI水清洗、吹氮气和甩干等工艺；
（6）将晶圆片取出放到收片片盒中，完成清洗过程。
2.如权利要求1一种金属膜剥离清洗方法，其特征在于：所述的金属剥离步骤为：基层清洗、镀金属膜、涂光阻胶、去胶、刻蚀以及曝光、显影。
3.如权利要求1一种金属膜剥离清洗方法，其特征在于：所述的DI水清洗水兆声喷头震荡频率为1MHz。
4.如权利要求1一种金属膜剥离清洗方法，其特征在于：所述的干燥的热氮气温度范围为80℃±5℃。
CN201711192634.1A 2017-11-24 2017-11-24 一种金属膜剥离清洗方法 Withdrawn CN107919305A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109560020A (zh) * 2018-09-27 2019-04-02 厦门市三安集成电路有限公司 一种使用nmp蒸汽剥离晶圆金属膜的结构和方法
CN109860024A (zh) * 2019-01-04 2019-06-07 山东天岳先进材料科技有限公司 一种降低晶片表面颗粒度的清洁方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109560020A (zh) * 2018-09-27 2019-04-02 厦门市三安集成电路有限公司 一种使用nmp蒸汽剥离晶圆金属膜的结构和方法
CN109860024A (zh) * 2019-01-04 2019-06-07 山东天岳先进材料科技有限公司 一种降低晶片表面颗粒度的清洁方法

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