CN107910377A - 一种石墨烯晶体管及制备方法 - Google Patents
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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Abstract
本发明公开了一种石墨烯晶体管及制备方法,属于半导体器件技术领域,石墨烯晶体管包括衬底,衬底的上表面设有石墨烯PN结,石墨烯PN结两侧设有源、漏接触电极;石墨烯PN结的P区或N区设有与石墨烯PN结成45°夹角的栅极。该方法包括在衬底上制作石墨烯PN结;在石墨烯PN结两侧制作源、漏接触电极;在石墨烯PN结上制作与石墨烯PN结成45°夹角的栅极。本发明利用石墨烯PN结中的载流子通过PN结的几率与PN结的夹角相关特性,在石墨烯PN结的P区或N区制作与PN结成45°夹角的栅极,使载流子通过具有45°夹角的两个PN结时被完全反射,从而实现石墨烯晶体管的自由开关。
Description
技术领域
本发明涉及半导体器件技术领域,特别是涉及一种石墨烯晶体管及制备方法。
背景技术
石墨烯(graphene)是由单层碳原子紧密堆积成二维蜂窝状晶格结构的一种碳质新材料。由于石墨烯特殊的电子能谱,它的电荷载体是无质量的Dirac费米子。石墨烯在室温下具有弹道输运特性,其化学和力学的稳定性以及纳米尺度的可量测性使得它在纳米光电子器件以及半导体器件研究方面有着非常突出的应用前景。其超高的载流子迁移率、热导率等特性,使它非常适用于制作高速电子器件。但是,由于石墨烯没有带隙,器件无法关断,难以用于制作逻辑器件。
发明内容
本发明实施例的目的在于提供一种石墨烯晶体管及制备方法,旨在解决石墨烯由于没有带隙导致石墨烯晶体管无法关断的问题,其利用石墨烯PN结中载流子的传输特性,实现石墨烯晶体管自由开关。
为解决上述技术问题,本发明实施例所采取的技术方案是:一种石墨烯晶体管制备方法,包括步骤:
在衬底上制作石墨烯PN结;
在所述石墨烯PN结两侧分别制作源、漏接触电极;
在所述石墨烯PN结的P区或N区制作与所述结区成45°夹角的栅极,所述栅极贯穿所述P区或N区。
进一步地,所述源、漏接触电极与石墨烯PN结的结区平行。
进一步地,石墨烯PN结的制作包括以下步骤:
在衬底上生长N型石墨烯层;
将需要保留的N区覆盖介质,在裸露区域通过元素掺杂或表面掺杂的方法制作P型石墨烯层,去除N区的覆盖介质;
或者在衬底上生长P型石墨烯层;
将需要保留的P区覆盖介质,在裸露区域通过元素掺杂或表面掺杂的方法制作N型石墨烯层,去除P区的覆盖介质。
本发明实施例还公开了一种石墨烯晶体管,包括衬底,所述衬底的上表面设有石墨烯PN结,所述石墨烯PN结两侧设有源、漏接触电极;所述石墨烯PN结的P区或N区设有贯穿所述P区或N区并与石墨烯PN结的结区成45°夹角的栅极。
采用上述技术方案所产生的有益效果在于:(1)本发明实施例的石墨烯晶体管利用石墨烯PN结中的载流子通过PN结的几率与结区的夹角相关特性,在石墨烯PN结的P区或N区制作与结区成45°夹角的栅极,给栅极加电压形成两个具有45°夹角的PN结,使载流子通过具有45°夹角的两个PN结时被完全反射,从而实现石墨烯晶体管的自由开关,其结构简单,设计巧妙;(2)本发明实施例提供的方法操作简单、采用常规的工艺即可实现,适于规模化推广和生产。
附图说明
图1是本发明实施例一提供的石墨烯晶体管制备方法流程图;
图2是本发明实施例一提供的石墨烯晶体管的主视结构示意图;
图3是本发明实施例一提供的石墨烯晶体管的俯视结构示意图;
图4是本发明实施例一提供的石墨烯晶体管的能带原理图;
图5是本发明实施例二提供的石墨烯晶体管制备方法流程图;
图6是本发明实施例二提供的石墨烯晶体管的能带原理图;
图中:10、衬底,20、P区,30、N区,40、源接触电极,50、漏接触电极,60、栅极。
具体实施方式
下面结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明的一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
在下面的描述中阐述了很多具体细节以便于充分理解本发明,但是本发明还可以采用其他不同于在此描述的其它方式来实施,本领域技术人员可以在不违背本发明内涵的情况下做类似推广,因此本发明不受下面公开的具体实施例的限制。
一种石墨烯晶体管制备方法,包括步骤:
在衬底上制作石墨烯PN结;
在石墨烯PN结两侧分别制作源、漏接触电极;
在石墨烯PN结的P区或N区制作与所述结区成45°夹角的栅极,所述栅极贯穿所述P区或N区。
优选地,源、漏接触电极与石墨烯PN结的结区平行。
优选地,石墨烯PN结的制作包括以下步骤:
在衬底上生长N型石墨烯层;
将需要保留的N区覆盖介质,在裸露区域通过元素掺杂或表面掺杂的方法制作P型石墨烯层,去除N区的覆盖介质;
或者在衬底上生长P型石墨烯层;
将需要保留的P区覆盖介质,在裸露区域通过元素掺杂或表面掺杂的方法制作N型石墨烯层,去除P区的覆盖介质。
优选地,衬底为碳化硅、蓝宝石、硅或玻璃。
优选地,通过掺杂方法制作P型石墨烯层的掺杂源包括:F4-TCNQ、TCNE、硼或氢;
通过掺杂方法制作N型石墨烯层的掺杂源包括联苄吡啶、TPA或氮。
优选地,所述源接触电极或漏接触电极为钌、铑、钯、银、锇、铱、铂、金、钛、铝、铬、锗、钼、镍、钨、铜、钴、铁中的一种金属或两种以上的合金。
优选地,所述栅极包括栅介质和栅金属,所述栅介质为Al2O3、TiO2、HfO2或Y2O3,所述栅金属为钌、铑、钯、银、锇、铱、铂、金、钛、铝、铬、锗、钼、镍、钨、铜、钴或铁。
本发明实施例还公开了一种石墨烯晶体管,包括衬底,衬底的上表面设有石墨烯PN结,石墨烯PN结两侧设有源、漏接触电极;所述石墨烯PN结的P区或N区设有贯穿所述P区或N区并与石墨烯PN结的结区成45°夹角的栅极。
优选地,栅极长度为30nm-1μm;源、漏接触电极厚度为200nm-500nm。
优选地,源、漏接触电极与石墨烯PN结的结区平行。
本发明的一种石墨烯晶体管及制备方法,利用石墨烯PN结中的载流子通过PN结的几率与PN结的夹角相关特性,在石墨烯PN结的P区或N区制作与PN结成45°夹角的栅极,当栅极加一定电压时,在石墨烯PN结区形成两个具有45°夹角PN结。载流子通过一个PM结后,在通过另外一个与前一个PN结成45°夹角的PN结时会被完全反射,从而实现石墨烯晶体管的关断;当撤掉栅极电压时,载流子能够完全的通过石墨烯PN结。从而实现了石墨烯晶体管的高开关比。
实施例一
请参阅图1,本发明实施例一提供的一种石墨烯晶体管制备方法,包括步骤:
S101:在高纯半绝缘碳化硅衬底上,通过热分解法生成N型单层外延石墨烯;
S102:在需要保留N型掺杂区域上电子束蒸发氧化铝保护层;
S103:将样品放置于真空腔体内,并在700℃氢气气氛下退火1小时,形成P型掺杂石墨烯区;
S104:去掉氧化铝保护层,光刻形成石墨烯PN结;
S105:电子束蒸发200nm厚金作为源、漏接触电极;
S106:在石墨烯PN结N区内,通过电子束直写工艺形成与石墨烯PN结夹角45°、长度为30nm的T型栅,电子束蒸发2nm厚铝,并自氧化形成氧化铝作为栅介质;
S107:电子束蒸发100nm厚铝作为栅金属,形成栅极。
与上述方法相对应的,请参阅图2和图3,本实施例制作的石墨烯晶体管,包括衬底10,衬底10的上表面设有石墨烯PN结,石墨烯PN结两侧设有与石墨烯PN结的结区平行的源接触电极40、漏接触电极50,所谓与石墨烯PN结的结区平行是指源漏接触电极的边线与石墨烯PN结P区20和N区30交界处平行。石墨烯PN结N区30设有与石墨烯PN结成45°夹角的栅极60。图4为本实施例提供的半导体器件的能带原理图,图4中上侧为半导体器件处于开态下的能带原理图,下侧为半导体器件处于关态下的能带原理图,EF为费米能级。
本实施例中,在石墨烯PN结N区30制作与PN结成45°夹角的栅极60。当在栅极60上加一定电压时,在石墨烯沟道区形成PNPN结,即沟道区含有两个以上PN节,且其中两个PN结具有45°夹角。载流子通过两个石墨烯PN结的几率与PN夹角相关,当两个石墨烯PN结夹角为0°或90°时,载流子能够完全通过两个石墨烯PN结;当两个石墨烯PN结夹角在0°-45°或45°-90°之间时,载流子一部分能够通过PN结,一部分被反射;当两个石墨烯PN结夹角为45°时,载流子通过其中一个PN结后,在通过另一个夹角45°的PN结时会被完全反射,从而实现石墨烯晶体管电流关断,提高石墨烯晶体管开关比。
实施例二
请参阅图5,本发明实施例二提供的一种石墨烯晶体管制备方法,包括步骤:
S201:在高纯半绝缘碳化硅衬底上,通过化学气相沉积方法生成P型单层外延石墨烯;
S202:在需要保留P型掺杂区域上电子束蒸发钯金属保护层;
S203:将样品表面涂覆联苄吡啶,形成N型掺杂石墨烯区;
S204:去掉钯金属保护层,光刻形成石墨烯PN结;
S205:电子束蒸发500nm厚钯,光刻形成源、漏接触电极;
S206:在石墨烯PN结P区内,通过电子束直写工艺形成与石墨烯PN结夹角45°、长度为1μm的Y型栅,电子束蒸发20nm厚钇,并自氧化形成氧化钇作为栅介质;
S207:电子束蒸发250nm厚铝和250nm厚金作为栅金属,形成栅极。
与上述方法相对应的,本实施例制作的石墨烯晶体管,包括衬底,衬底的上表面设有石墨烯PN结,石墨烯PN结两侧设有与石墨烯PN结的结区平行的源、漏接触电极;石墨烯PN结的P区设有与石墨烯PN结成45°夹角的栅极。图6为本实施例提供的半导体器件的能带原理图,图6中上侧为半导体器件处于开态下的能带原理图,下侧为半导体器件处于关态下的能带原理图,EF为费米能级。
本实施例中,在石墨烯PN结的P区制作与PN结成45°夹角的栅极。当在栅极上加一定电压时,在石墨烯沟道区形成NPNP结,即沟道区含有两个以上PN节,且其中两个PN结具有45°夹角。载流子通过两个石墨烯PN结的几率与PN夹角相关,当两个石墨烯PN结夹角为0度或90°时,载流子能够完全通过两个石墨烯PN结;当两个石墨烯PN结夹角在0°-45°或45°-90°之间时,载流子一部分能够通过PN结,一部分被反射;当两个石墨烯PN结夹角为45°时,载流子通过其中一个PN结后,在通过另一个夹角45°的PN结时会被完全反射,从而实现石墨烯晶体管电流关断,提高石墨烯晶体管开关比。
前述是对示例实施例的举例说明,并且不应被解释为对示例实施例的限制。虽然已经描述了一些示例实施例,但是本领域的技术人员将容易理解的是,在实质上不脱离本公开的新颖性教导和优点的情况下,示例实施例中的许多修改是可以的。因此,所有这些修改都意图被包括在如权利要求所限定的本公开的范围之内。因此,将理解的是,前述是对各种示例实施例的举例说明,而不应被解释为受限于所公开的特定的示例实施例,并且对所公开的示例实施例及其他示例实施例的修改意图包括在权利要求的范围之内。
Claims (10)
1.一种石墨烯晶体管制备方法,其特征在于,包括步骤:
在衬底上制作石墨烯PN结;
在所述石墨烯PN结两侧分别制作源、漏接触电极;
在所述石墨烯PN结的P区或N区制作与所述结区成45°夹角的栅极,所述栅极贯穿所述P区或N区。
2.根据权利要求1所述的一种石墨烯晶体管制备方法,其特征在于,所述源、漏接触电极与石墨烯PN结的结区平行。
3.根据权利要求1所述的一种石墨烯晶体管制备方法,其特征在于,石墨烯PN结的制作包括以下步骤:
在衬底上生长N型石墨烯层;
将需要保留的N区覆盖介质,在裸露区域通过元素掺杂或表面掺杂的方法制作P型石墨烯层,去除N区的覆盖介质;
或者在衬底上生长P型石墨烯层;
将需要保留的P区覆盖介质,在裸露区域通过元素掺杂或表面掺杂的方法制作N型石墨烯层,去除P区的覆盖介质。
4.根据权利要求1或2所述的一种石墨烯晶体管制备方法,其特征在于,所述衬底为碳化硅、蓝宝石、硅或玻璃。
5.根据权利要求3所述的一种石墨烯晶体管制备方法,其特征在于,通过元素掺杂或表面掺杂方法制作P型石墨烯层的掺杂源包括:F4-TCNQ、TCNE、硼或氢;
通过元素掺杂或表面掺杂方法制作N型石墨烯层的掺杂源包括:联苄吡啶、TPA或氮。
6.根据权利要求1所述的一种石墨烯晶体管制备方法,其特征在于,所述源接触电极或漏接触电极为钌、铑、钯、银、锇、铱、铂、金、钛、铝、铬、锗、钼、镍、钨、铜、钴、铁中的一种金属或两种以上的合金。
7.根据权利要求1所述的一种石墨烯晶体管制备方法,其特征在于,所述栅极包括栅介质和栅金属,所述栅介质为Al2O3、TiO2、HfO2或Y2O3,所述栅金属为钌、铑、钯、银、锇、铱、铂、金、钛、铝、铬、锗、钼、镍、钨、铜、钴或铁。
8.一种石墨烯晶体管,包括衬底,其特征在于,所述衬底的上表面设有石墨烯PN结,所述石墨烯PN结两侧设有源、漏接触电极;所述石墨烯PN结的P区或N区设有贯穿所述P区或N区并与石墨烯PN结的结区成45°夹角的栅极。
9.根据权利要求8所述的石墨烯晶体管,其特征在于,所述栅极长度为30nm-1μm;所述源、漏接触电极厚度为200nm-500nm。
10.根据权利要求8所述的石墨烯晶体管,其特征在于,所述源、漏接触电极与石墨烯PN结的结区平行。
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