CN107887352B - 便于散热的整流器件 - Google Patents

便于散热的整流器件 Download PDF

Info

Publication number
CN107887352B
CN107887352B CN201710832398.9A CN201710832398A CN107887352B CN 107887352 B CN107887352 B CN 107887352B CN 201710832398 A CN201710832398 A CN 201710832398A CN 107887352 B CN107887352 B CN 107887352B
Authority
CN
China
Prior art keywords
metal substrate
connection sheet
negative
diode chip
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710832398.9A
Other languages
English (en)
Other versions
CN107887352A (zh
Inventor
何洪运
程琳
刘玉龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suqian Goode Semiconductor Co ltd
Original Assignee
Suzhou Good Ark Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Good Ark Electronics Co Ltd filed Critical Suzhou Good Ark Electronics Co Ltd
Priority to CN201710832398.9A priority Critical patent/CN107887352B/zh
Publication of CN107887352A publication Critical patent/CN107887352A/zh
Application granted granted Critical
Publication of CN107887352B publication Critical patent/CN107887352B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736Metallic materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49575Assemblies of semiconductor devices on lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005Shape
    • H01L2224/4009Loop shape
    • H01L2224/40095Kinked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Rectifiers (AREA)
  • Led Device Packages (AREA)

Abstract

本发明一种便于散热的整流器件,其由环氧封装体包覆的第一、第二、第三、第四二极管芯片和负极金属条,所述环氧封装体底部且位于左、右侧分别固定有第一、第二金属基片和E形金属基片;第一定位机构由位于负极金属条两侧的凸点和位于第一连接片、第三连接片末端的两侧的内陷部组成,此凸点嵌入内陷部内;所述第二定位机构由位于第一、第二金属基片各自两侧的凸点和位于第二连接片、第四连接片末端的两侧的内陷部组成,此凸点嵌入内陷部内;第一、第二金属基片位于环氧封装体边缘处的端面分别设置有至少2个第一引脚外凸部。本发明避免了现有产品的通过机箱内的空气对流散热,芯片发热要通过环氧才能传导到外界空气中,环氧导热能力差等缺陷。

Description

便于散热的整流器件
技术领域
本发明涉及一种整流半导体器件,尤其涉及一种便于散热的整流器件。
背景技术
整流器是由四个整流二极管组成的一个桥式结构,它利用二极管的单向导电特性对交流电进行整流,由于桥式整流器对输入正弦波的利用效率比半波整流高一倍,是对二极管半波整流的一种显著改进,故被广泛应用于交流电转换成直流电的电路中。
一方面,现有双列叠片式结构整流器,生产工艺简单,易操作。但是每颗二极管晶粒所在的支撑片平整度互相影响造成生产制程中产品内部应力状况不够稳定,晶粒受损或者接触不良的状况时有发生。另一方面,现有产品为4颗独立的二极管(附图1)或插件式桥堆产品(附图2)或微型桥堆产品。主要存在如下弊端:4颗独立的二极管:产品厚度大,占用PCB板空间较大,不适用回流焊方式焊接。直列式桥堆产品:产品厚度大,散热性能不佳,不适用回流焊方式焊接。微型桥堆产品,无散热片,客户希望产品能有更好的散热性能。综上,现有技术存在产品厚度大,占用PCB板空间较大,不适应终端产品小型化的需求;产品散热性能不佳,造成终端产品发热量大,不利于节能环保;不适用回流焊方式焊接,PCB板上其他产品需要用回流焊方式焊接时整个PCB板需要二次受热,会对已组装的器件带来损害等技术问题。
发明内容
本发明目的是提供一种便于散热的整流器件,该表面贴装整流桥器件厚度薄,芯片与PCB的散热路径最短,散热片为金属材质,导热最好,充分利用了PCB板自身的散热能力,散热片面积与产品长x宽面积比例达50%,最大限度的利用了PCB散热能力。
为达到上述目的,本发明采用的技术方案是:一种便于散热的整流器件,包括:由环氧封装体包覆的第一、第二、第三、第四二极管芯片和负极金属条,所述环氧封装体底部且位于左、右侧分别固定有第一、第二金属基片和E形金属基片,所述负极金属条位于第一、第二金属基片和E形金属基片之间;
第一二极管芯片的正极端与第一金属基片上表面电连接,第二二极管芯片的负极端与E形金属基片一端上表面电连接,第三二极管芯片的负极端与E形金属基片另一端上表面电连接,第四二极管芯片的正极端与第二金属基片上表面电连接;
第一连接片两端分别与第一二极管芯片的负极端和负极金属条的上表面电连接,第二连接片两端分别与第二二极管芯片的正极端和第一金属基片的上表面电连接,第二连接片中部具有凸起部且该凸起部与负极金属条通过环氧封装体隔离;
第三连接片两端分别与第四二极管芯片的负极端和负极金属条的上表面电连接,第四连接片两端分别与第三二极管芯片的正极端和第二金属基片的上表面电连接;
所述第一、第二、第三、第四连接片沿前后方向平行设置,所述负极金属条位于第一金属基片和E形金属基片之间的前端具有一折弯部,此折弯部底部与第一、第二金属基片和E形金属基片各自的底部位于同一水平面且均裸露出所述环氧封装体;
第一、第二金属基片作为交流输入端,所述负极金属条的折弯部作为直流负极端,所述E形金属基片作为直流正极端;所述第一连接片、第三连接片与负极金属条通过第一定位机构连接,所述第二连接片、第四连接片与第一、第二金属基片均通过第二定位机构连接,所述第一定位机构由位于负极金属条两侧的凸点和位于第一连接片、第三连接片末端的两侧的内陷部组成,此凸点嵌入内陷部内;所述第二定位机构由位于第一、第二金属基片各自两侧的凸点和位于第二连接片、第四连接片末端的两侧的内陷部组成,此凸点嵌入内陷部内;
所述环氧封装体的厚度小于2mm;所述第一、第二金属基片位于环氧封装体边缘处的端面分别设置有至少2个第一引脚外凸部。
由于上述技术方案运用,本发明与现有技术相比具有下列优点和效果:
1. 本发明便于散热的整流器件,其相对现有微型桥堆产品为双面封装,本发明在厚度方向上单面封装,该产品厚度薄,将厚度有5mm以上调整为在2mm以内,既作为散热片又同时作为电气端子的第一、第二金属基片和E形金属基片,上面与芯片连接,下面与客户使用时的PCB连接,芯片为发热部件,芯片与PCB的散热路径最短,散热片为金属材质,导热最好,充分利用了PCB板自身的散热能力,避免了现有产品的通过机箱内的空气对流散热,芯片发热要通过环氧才能传导到外界空气中,环氧导热能力差等缺陷。
2. 本发明便于散热的整流器件,其该产品为表面贴装产品,适用于较先进的回流焊方式焊接,该产品使用独创的内部结构,四颗连接片跨过一颗引线桥接实现桥接,该布局使得4颗芯片间距最远,四颗发热相互累积效应最低设计和全新焊盘外形设计,第一、第二金属基片和E形金属基片采用E型设计,散热片面积与产品长x宽面积比例达50%,最大限度的利用了PCB散热能力;其次,其定位机构由位于两侧的凸点和连接片末端的两侧的内陷部组成,大大提高了安装精度和使用中的可靠性和寿命。
附图说明
附图1为现有轴向型产品结构示意图;
附图2为现有直列式桥堆结构示意图;
附图3为本发明便于散热的整流器件结构示意图;
附图4为附图3的仰视且旋转后的结构示意图;
附图5为附图3的A-A剖面结构示意图;
附图6为附图3的B-B剖面结构示意图;
附图7为本发明定位机构结构示意图;
附图8为附图7的仰视结构示意图。
以上附图中:1、环氧封装体;2、第一二极管芯片;3、第二二极管芯片;4、第三二极管芯片;5、第四二极管芯片;6、负极金属条;7、第一金属基片;8、第二金属基片;9、E形金属基片;10、第一连接片;11、第二连接片;111、凸起部;12、第三连接片;13、第四连接片;14、折弯部;15、第一引脚外凸部;16、第二引脚外凸部;17、第一定位机构;18、第二定位机构;19、凸点;20、内陷部。
具体实施方式
下面结合附图及实施例对本发明作进一步描述:
实施例:一种便于散热的整流器件,包括:由环氧封装体1包覆的第一、第二、第三、第四二极管芯片2、3、4、5和负极金属条6,所述环氧封装体1底部且位于左、右侧分别固定有第一、第二金属基片7、8和E形金属基片9,所述负极金属条6位于第一、第二金属基片7、8和E形金属基片9之间;
第一二极管芯片2的正极端与第一金属基片7上表面电连接,第二二极管芯片3的负极端与E形金属基片9一端上表面电连接,第三二极管芯片4的负极端与E形金属基片9另一端上表面电连接,第四二极管芯片5的正极端与第二金属基片8上表面电连接;
第一连接片10两端分别与第一二极管芯片2的负极端和负极金属条6的上表面电连接,第二连接片11两端分别与第二二极管芯片3的正极端和第一金属基片7的上表面电连接,第二连接片11中部具有凸起部111且该凸起部111与负极金属条6通过环氧封装体1隔离;
第三连接片12两端分别与第四二极管芯片5的负极端和负极金属条6的上表面电连接,第四连接片13两端分别与第三二极管芯片4的正极端和第二金属基片8的上表面电连接;
所述第一、第二、第三、第四连接片10、11、12、13沿前后方向平行设置,所述负极金属条6位于第一金属基片7和E形金属基片9之间的前端具有一折弯部14,此折弯部14底部与第一、第二金属基片7、8和E形金属基片9各自的底部位于同一水平面且均裸露出所述环氧封装体1;
第一、第二金属基片7、8作为交流输入端,所述负极金属条6的折弯部14作为直流负极端,所述E形金属基片9作为直流正极端;所述第一连接片10、第三连接片12与负极金属条6通过第一定位机构17连接,所述第二连接片11、第四连接片13与第一、第二金属基片7、8均通过第二定位机构18连接,所述第一定位机构17由位于负极金属条6两侧的凸点19和位于第一连接片10、第三连接片12末端的两侧的内陷部20组成,此凸点19嵌入内陷部20内;所述第二定位机构18由位于第一、第二金属基片7、8各自两侧的凸点19和位于第二连接片11、第四连接片13末端的两侧的内陷部20组成,此凸点19嵌入内陷部20内。
上述环氧封装体1的厚度小于2mm;上述凸点19的高度高于内陷部20。
上述第一、第二金属基片7、8位于环氧封装体1边缘处的端面分别设置有至少2个第一引脚外凸部15。
上述E形金属基片9位于环氧封装体1边缘处的端面设置有4个第二引脚外凸部16。
采用上述便于散热的整流器件时,其相对现有微型桥堆产品为双面封装,本发明在厚度方向上单面封装,该产品厚度薄,将厚度有5mm以上调整为在2mm以内,既作为散热片又同时作为电气端子的第一、第二金属基片和E形金属基片,上面与芯片连接,下面与客户使用时的PCB连接,芯片为发热部件,芯片与PCB的散热路径最短,散热片为金属材质,导热最好,充分利用了PCB板自身的散热能力,避免了现有产品的通过机箱内的空气对流散热,芯片发热要通过环氧才能传导到外界空气中,环氧导热能力差等缺陷;其次,其该产品为表面贴装产品,适用于较先进的回流焊方式焊接,该产品使用独创的内部结构,四颗连接片跨过一颗引线桥接实现桥接,该布局使得4颗芯片间距最远,四颗发热相互累积效应最低设计和全新焊盘外形设计,第一、第二金属基片和E形金属基片采用E型设计,散热片面积与产品长x宽面积比例达50%,最大限度的利用了PCB散热能力;再次,其定位机构由位于两侧的凸点和连接片末端的两侧的内陷部组成,大大提高了安装精度和使用中的可靠性和寿命。
上述实施例只为说明本发明的技术构思及特点,其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施,并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰,都应涵盖在本发明的保护范围之内。

Claims (1)

1.一种便于散热的整流器件,其特征在于:包括:由环氧封装体(1)包覆的第一、第二、第三、第四二极管芯片(2、3、4、5)和负极金属条(6),所述环氧封装体(1)底部且位于左、右侧分别固定有第一、第二金属基片(7、8)和E形金属基片(9),所述负极金属条(6)位于第一、第二金属基片(7、8)和E形金属基片(9)之间;
第一二极管芯片(2)的正极端与第一金属基片(7)上表面电连接,第二二极管芯片(3)的负极端与E形金属基片(9)一端上表面电连接,第三二极管芯片(4)的负极端与E形金属基片(9)另一端上表面电连接,第四二极管芯片(5)的正极端与第二金属基片(8)上表面电连接;
第一连接片(10)两端分别与第一二极管芯片(2)的负极端和负极金属条(6)的上表面电连接,第二连接片(11)两端分别与第二二极管芯片(3)的正极端和第一金属基片(7)的上表面电连接,第二连接片(11)中部具有凸起部(111)且该凸起部(111)与负极金属条(6)通过环氧封装体(1)隔离;
第三连接片(12)两端分别与第四二极管芯片(5)的负极端和负极金属条(6)的上表面电连接,第四连接片(13)两端分别与第三二极管芯片(4)的正极端和第二金属基片(8)的上表面电连接;
所述第一、第二、第三、第四连接片(10、11、12、13)沿前后方向平行设置,所述负极金属条(6)位于第一金属基片(7)和E形金属基片(9)之间的前端具有一折弯部(14),此折弯部(14)底部与第一、第二金属基片(7、8)和E形金属基片(9)各自的底部位于同一水平面且均裸露出所述环氧封装体(1);
第一、第二金属基片(7、8)作为交流输入端,所述负极金属条(6)的折弯部(14)作为直流负极端,所述E形金属基片(9)作为直流正极端;所述第一连接片(10)、第三连接片(12)与负极金属条(6)通过第一定位机构(17)连接,所述第二连接片(11)、第四连接片(13)与第一、第二金属基片(7、8)均通过第二定位机构(18)连接,所述第一定位机构(17)由位于负极金属条(6)两侧的凸点(19)和位于第一连接片(10)、第三连接片(12)末端的两侧的内陷部(20)组成,此凸点(19)嵌入内陷部(20)内;所述第二定位机构(18)由位于第一、第二金属基片(7、8)各自两侧的凸点(19)和位于第二连接片(11)、第四连接片(13)末端的两侧的内陷部(20)组成,此凸点(19)嵌入内陷部(20)内;
所述环氧封装体(1)的厚度小于2mm;所述第一、第二金属基片(7、8)位于环氧封装体(1)边缘处的端面分别设置有至少2个第一引脚外凸部(15)。
CN201710832398.9A 2015-10-08 2015-10-08 便于散热的整流器件 Active CN107887352B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710832398.9A CN107887352B (zh) 2015-10-08 2015-10-08 便于散热的整流器件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510644854.8A CN105185772B (zh) 2015-10-08 2015-10-08 微型贴装整流半导体器件
CN201710832398.9A CN107887352B (zh) 2015-10-08 2015-10-08 便于散热的整流器件

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201510644854.8A Division CN105185772B (zh) 2015-10-08 2015-10-08 微型贴装整流半导体器件

Publications (2)

Publication Number Publication Date
CN107887352A CN107887352A (zh) 2018-04-06
CN107887352B true CN107887352B (zh) 2019-11-29

Family

ID=54907759

Family Applications (4)

Application Number Title Priority Date Filing Date
CN201710832851.6A Active CN107887353B (zh) 2015-10-08 2015-10-08 高可靠性整流桥堆器件
CN201710832398.9A Active CN107887352B (zh) 2015-10-08 2015-10-08 便于散热的整流器件
CN201510644854.8A Active CN105185772B (zh) 2015-10-08 2015-10-08 微型贴装整流半导体器件
CN201710832396.XA Active CN107887367B (zh) 2015-10-08 2015-10-08 微型桥堆整流器

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201710832851.6A Active CN107887353B (zh) 2015-10-08 2015-10-08 高可靠性整流桥堆器件

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201510644854.8A Active CN105185772B (zh) 2015-10-08 2015-10-08 微型贴装整流半导体器件
CN201710832396.XA Active CN107887367B (zh) 2015-10-08 2015-10-08 微型桥堆整流器

Country Status (2)

Country Link
CN (4) CN107887353B (zh)
WO (1) WO2017059619A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109065523B (zh) * 2018-07-26 2024-04-26 苏州固锝电子股份有限公司 整流芯片的封装结构
CN109887896B (zh) * 2019-03-12 2021-08-24 如皋市大昌电子有限公司 一种超薄型贴片式桥堆整流装置
CN110190038A (zh) * 2019-06-14 2019-08-30 山东元捷电子科技有限公司 一种基于平脚的桥堆二极管

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0726642A1 (en) * 1995-02-08 1996-08-14 AT&T Corp. High frequency surface mount transformer-diode power module
CN201142329Y (zh) * 2008-01-14 2008-10-29 乐山希尔电子有限公司 塑封型整流模块
CN102931174A (zh) * 2012-10-30 2013-02-13 南通康比电子有限公司 一种微型表面贴装单相全波桥式整流器及其制造方法
CN103401438A (zh) * 2013-08-13 2013-11-20 苏州工业园区凯众通微电子技术有限公司 新型表面贴装桥式整流器及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4437721A1 (de) * 1994-10-21 1996-04-25 Giesecke & Devrient Gmbh Kontaktloses elektronisches Modul
CN201681826U (zh) * 2010-05-11 2010-12-22 苏州固锝电子股份有限公司 一种应用于电路板的表面贴装式整流器
CN202332842U (zh) * 2011-11-16 2012-07-11 扬州扬杰电子科技股份有限公司 灌封单相扁形整流桥堆
CN202406037U (zh) * 2011-12-01 2012-08-29 重庆平伟实业股份有限公司 一种新型贴片式无引脚整流桥
CN202798495U (zh) * 2012-08-10 2013-03-13 黄山市阊华电子有限责任公司 带散热装置的三相压塑桥式整流模块
CN204966487U (zh) * 2015-10-08 2016-01-13 苏州固锝电子股份有限公司 微型贴装整流半导体器件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0726642A1 (en) * 1995-02-08 1996-08-14 AT&T Corp. High frequency surface mount transformer-diode power module
CN201142329Y (zh) * 2008-01-14 2008-10-29 乐山希尔电子有限公司 塑封型整流模块
CN102931174A (zh) * 2012-10-30 2013-02-13 南通康比电子有限公司 一种微型表面贴装单相全波桥式整流器及其制造方法
CN103401438A (zh) * 2013-08-13 2013-11-20 苏州工业园区凯众通微电子技术有限公司 新型表面贴装桥式整流器及其制造方法

Also Published As

Publication number Publication date
CN107887367B (zh) 2020-12-08
CN107887353B (zh) 2020-03-24
CN105185772A (zh) 2015-12-23
WO2017059619A1 (zh) 2017-04-13
CN107887353A (zh) 2018-04-06
CN107887367A (zh) 2018-04-06
CN107887352A (zh) 2018-04-06
CN105185772B (zh) 2018-04-20

Similar Documents

Publication Publication Date Title
WO2009094829A1 (en) A high heat dissipation led light source module and a high heat dissipation and high power led light source assembly
CN107887352B (zh) 便于散热的整流器件
CN105185757B (zh) 散热片结构表面贴装整流桥器件
US20160308106A1 (en) Floating heat sink support with copper sheets and led package assembly for led flip chip package
CN204966489U (zh) 超薄型贴片式整流器
CN204966487U (zh) 微型贴装整流半导体器件
CN210607231U (zh) 一种新型复合散热材料
CN205264699U (zh) 高效节能led灯丝
CN208191005U (zh) 一种阵列led封装用的石墨烯强化导热金属pcb板
CN204966478U (zh) 散热片结构表面贴装整流桥器件
CN206401355U (zh) 一种防静电led铝基板
CN205680671U (zh) 散热片结构超薄型表面贴装整流桥器件
CN204966488U (zh) 高导热系数的超薄贴装整流器件
CN209731686U (zh) 一种电路板
CN203814117U (zh) 导热垫以及主板
CN202738247U (zh) 一种改善散热性的电路板
CN202977526U (zh) Cob封装的led器件
CN220138302U (zh) 具有高散热性能的功率桥堆
CN203691340U (zh) 一种太阳能光伏电池组件的保护装置
CN218602422U (zh) 超大功率器件铜基带焊接结构
CN106449536A (zh) 抗浪涌型表面贴装半导体器件
CN218119698U (zh) 一种绝缘铝基板
CN215680686U (zh) 一种大功率二极管的封装结构
WO2017161669A1 (zh) 散热片结构超薄型表面贴装整流桥器件
CN215896371U (zh) 一种igbt模块的陶瓷基散热结构

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20231026

Address after: No. 1 Nanfeng Road, Zhangjiagang Industrial Park, Suyu District, Suqian City, Jiangsu Province, 223800

Patentee after: Suqian Goode Semiconductor Co.,Ltd.

Address before: Tong'an District Economic Development Zone Suzhou city Jiangsu province 215153 Tong Xi Road No. 31

Patentee before: SUZHOU GOODARK ELECTRONICS Co.,Ltd.

TR01 Transfer of patent right